WO2006051486A3 - All npn-transistor ptat current source - Google Patents

All npn-transistor ptat current source Download PDF

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Publication number
WO2006051486A3
WO2006051486A3 PCT/IB2005/053670 IB2005053670W WO2006051486A3 WO 2006051486 A3 WO2006051486 A3 WO 2006051486A3 IB 2005053670 W IB2005053670 W IB 2005053670W WO 2006051486 A3 WO2006051486 A3 WO 2006051486A3
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
ptat current
transistors
current
current source
Prior art date
Application number
PCT/IB2005/053670
Other languages
French (fr)
Other versions
WO2006051486A2 (en
Inventor
Lorenzo Tripodi
Mihai A T Sanduleanu
Pieter G Blanken
Original Assignee
Koninkl Philips Electronics Nv
Lorenzo Tripodi
Mihai A T Sanduleanu
Pieter G Blanken
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Lorenzo Tripodi, Mihai A T Sanduleanu, Pieter G Blanken filed Critical Koninkl Philips Electronics Nv
Priority to JP2007540791A priority Critical patent/JP4899105B2/en
Priority to US11/719,209 priority patent/US7952421B2/en
Priority to EP05801750A priority patent/EP1812842A2/en
Publication of WO2006051486A2 publication Critical patent/WO2006051486A2/en
Publication of WO2006051486A3 publication Critical patent/WO2006051486A3/en

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26Current mirrors
    • G05F3/262Current mirrors using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)

Abstract

The present invention relates to an improved PTAT current source and a respective method for generating a PTAT current. Opportune collector currents are generated and forced in two transistors exploiting the logarithmic relation between the base-emitter voltage and the collector current of a transistor. A resistor connected between the base terminals of said two transistors senses a voltage difference between the base-emitter voltages of the two transistors, which can have either the same or different areas. A fraction of the current flowing through the resistor is forced into a transistor collector and mirrored by an output transistor for providing an output current. By this principle an all npn-transistor PTAT current source can be provided that does not need pup transistors as in conventional PTAT current sources. The invention is generally applicable to a variety of different types of integrated circuits needing a PTAT current reference.
PCT/IB2005/053670 2004-11-11 2005-11-08 All npn-transistor ptat current source WO2006051486A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007540791A JP4899105B2 (en) 2004-11-11 2005-11-08 All npn transistor PTAT current source
US11/719,209 US7952421B2 (en) 2004-11-11 2005-11-08 All NPN-transistor PTAT current source
EP05801750A EP1812842A2 (en) 2004-11-11 2005-11-08 All npn-transistor ptat current source

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04105701 2004-11-11
EP04105701.9 2004-11-11

Publications (2)

Publication Number Publication Date
WO2006051486A2 WO2006051486A2 (en) 2006-05-18
WO2006051486A3 true WO2006051486A3 (en) 2006-10-05

Family

ID=36336868

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2005/053670 WO2006051486A2 (en) 2004-11-11 2005-11-08 All npn-transistor ptat current source

Country Status (5)

Country Link
US (1) US7952421B2 (en)
EP (1) EP1812842A2 (en)
JP (1) JP4899105B2 (en)
CN (1) CN100590568C (en)
WO (1) WO2006051486A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5554134B2 (en) * 2010-04-27 2014-07-23 ローム株式会社 Current generating circuit and reference voltage circuit using the same
US8498158B2 (en) 2010-10-18 2013-07-30 Macronix International Co., Ltd. System and method for controlling voltage ramping for an output operation in a semiconductor memory device
US8378735B2 (en) * 2010-11-29 2013-02-19 Freescale Semiconductor, Inc. Die temperature sensor circuit
US9501081B2 (en) 2014-12-16 2016-11-22 Freescale Semiconductor, Inc. Method and circuit for generating a proportional-to-absolute-temperature current source
US10642304B1 (en) 2018-11-05 2020-05-05 Texas Instruments Incorporated Low voltage ultra-low power continuous time reverse bandgap reference circuit
US11967949B2 (en) 2020-03-24 2024-04-23 Mitsubishi Electric Corporation Bias circuit, sensor device, and wireless sensor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4672304A (en) * 1985-01-17 1987-06-09 Centre Electronique Horloger S.A. Reference voltage source
US20030201791A1 (en) * 2002-04-30 2003-10-30 Conexant Systems, Inc. Integrated bias reference

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3893018A (en) * 1973-12-20 1975-07-01 Motorola Inc Compensated electronic voltage source
JPS5320554A (en) * 1976-08-11 1978-02-24 Hitachi Ltd Constant current circuit
US4277739A (en) * 1979-06-01 1981-07-07 National Semiconductor Corporation Fixed voltage reference circuit
US4525663A (en) * 1982-08-03 1985-06-25 Burr-Brown Corporation Precision band-gap voltage reference circuit
US4603291A (en) * 1984-06-26 1986-07-29 Linear Technology Corporation Nonlinearity correction circuit for bandgap reference
US4636710A (en) * 1985-10-15 1987-01-13 Silvo Stanojevic Stacked bandgap voltage reference
CA2302900A1 (en) * 2000-03-29 2001-09-29 Stepan Iliasevitch Precise control of vce in close to saturation conditions
US6664843B2 (en) * 2001-10-24 2003-12-16 Institute Of Microelectronics General-purpose temperature compensating current master-bias circuit
US6788041B2 (en) * 2001-12-06 2004-09-07 Skyworks Solutions Inc Low power bandgap circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4672304A (en) * 1985-01-17 1987-06-09 Centre Electronique Horloger S.A. Reference voltage source
US20030201791A1 (en) * 2002-04-30 2003-10-30 Conexant Systems, Inc. Integrated bias reference

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
FABRE A: "BIDIRECTIONAL CURRENT-CONTROLLED PTAT CURRENT SOURCE", IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: FUNDAMENTAL THEORY AND APPLICATIONS, IEEE INC. NEW YORK, US, vol. 41, no. 12, 1 December 1994 (1994-12-01), pages 922 - 925, XP000496851, ISSN: 1057-7122 *

Also Published As

Publication number Publication date
CN101069142A (en) 2007-11-07
US7952421B2 (en) 2011-05-31
JP2008520028A (en) 2008-06-12
CN100590568C (en) 2010-02-17
EP1812842A2 (en) 2007-08-01
JP4899105B2 (en) 2012-03-21
US20090295465A1 (en) 2009-12-03
WO2006051486A2 (en) 2006-05-18

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