WO2006050950A1 - Procede et appareil permettant d'eliminer des impuretes et utilisation d'un agent de nettoyage - Google Patents

Procede et appareil permettant d'eliminer des impuretes et utilisation d'un agent de nettoyage Download PDF

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Publication number
WO2006050950A1
WO2006050950A1 PCT/EP2005/012055 EP2005012055W WO2006050950A1 WO 2006050950 A1 WO2006050950 A1 WO 2006050950A1 EP 2005012055 W EP2005012055 W EP 2005012055W WO 2006050950 A1 WO2006050950 A1 WO 2006050950A1
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WO
WIPO (PCT)
Prior art keywords
cleaning material
radiation
solid
cleaning
cleaned
Prior art date
Application number
PCT/EP2005/012055
Other languages
English (en)
Inventor
Paul Leiderer
Johannes Graf
Mario Mosbacher
Boris Lukiyanchuk
Minghui Hong
Tow Chong Chong
Original Assignee
Universität Konstanz
A*Star
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universität Konstanz, A*Star filed Critical Universität Konstanz
Publication of WO2006050950A1 publication Critical patent/WO2006050950A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0014—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by incorporation in a layer which is removed with the contaminants
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Definitions

  • the present invention relates to a method for removing impurities from a surface of an object, to an apparatus for removing impurities from a surface of an object and the use of a cleaning agent for removing impurities from a surface of an object.
  • Numerous methods have been developed for cleaning semiconductor surfaces and/or for removing foreign particles from a semiconductor surface.
  • semiconductor manufacture has disclosed wet-chemical cleaning methods which can be used for foreign particles larger than approximately 100 nm.
  • wet-chemical cleaning methods cannot be applied locally, i.e. for selected surface regions of an object in which, for example, impurities occur. Rather, wet-chemical methods can only be applied over the entire surface.
  • Wet-chemical methods are also disadvantageous since the surface to be cleaned can very easily be damaged, and the disposal of the generally environmentally harmful chemicals or cleaning agents is generally expensive.
  • DLC Dry Laser Cleaning
  • SLC Steam Laser Cleaning
  • the semiconductor structure is irradiated with laser radiation and the semiconductor structure is heated very quickly, in particular close to the surface.
  • the thermal expansion of the semiconductor structure foreign particles are thrown off the surface.
  • this method has the drawback that the surface to be cleaned is generally damaged, for example by optical near-field effects, or ablation of the surface occurs.
  • this method can only remove foreign particles with a size or diameter of approximately 100 nm or more.
  • a further method for removing foreign particles is the SLC method, which is described, for example, in US Patent US 4,987,286.
  • the surface of the object to be cleaned for example a semiconductor structure
  • a liquid such as for example a water-alcohol mixture
  • the object to be cleaned is irradiated with laser light and heated, with the liquid evaporating explosively and as a result throwing the foreign particles off the surface of the semiconductor structure.
  • the SLC method can currently be used to remove foreign particles with a minimum size or diameter of approximately 60 nm.
  • the SLC method likewise entails numerous drawbacks.
  • drops of liquid may condense at the surface to be cleaned, with the result that the laser light is focused and, on account of the associated increase in the energy density, the surface may be damaged.
  • a conventional SLC method it is not always possible to establish whether all the foreign particles have been covered by or embedded in the liquid.
  • liquids such as for example water
  • drying spots or watermarks may occur.
  • liquid films with a thickness in the nanometer range are not easy in technical terms to prepare.
  • wetting of the substrate is presupposed.
  • the present invention comprises a method for removing impurities from a surface or at or on a surface of an object, comprising the steps of:
  • the term Jntroducing is used synonymous with the term ..irradiating".
  • the transition stage for the cleaning material from the solid state to the gaseous state is substantially a sublimation process.
  • the pressure and temperature of the cleaning material or in its vicinity can be controlled in such a way that a phase transition of the cleaning material is only possible from the solid state to the gaseous state. Consequently, pressure and temperature of the cleaning material are controlled in such a way that with regard to a conventional pressure- temperature diagram a phase transition substantially crosses the sublimation curve, i.e. substantially only a sublimation process is possible.
  • the term “substantially sublimes” is preferably to be understood as meaning that predominantly a phase transition from the solid phase to the gaseous phase takes place, i.e. the solid cleaning material predominantly changes from the solid state to the gaseous state without the cleaning material adopting the liquid state in the meantime.
  • the term “substantially sublimes” is preferably to be understood as meaning that during the transition from the solid state to the gaseous state a transient liquid nonequilibrium state can be adopted. In other words, a phase transition from the solid phase to the gaseous phase takes place, and a brief liquid state can be assumed to be well removed from a thermal equilibrium.
  • the step of applying the cleaning agent to the object to be cleaned is preferably an adsorption or resublimation step.
  • the pressure and temperature of the cleaning agent are controlled in such a manner that when the cleaning material is applied and substantially until the step of introducing the radiation, the triple point of the cleaning agent is substantially undershot. It is preferable for the temperature of the cleaning agent substantially to be kept below the temperature of the triple point until the radiation is introduced and the cleaning material substantially sublimes into the gaseous state. Similarly, it is preferable for the pressure of the cleaning agent or in the vicinity of the cleaning agent substantially to be kept below the pressure of the triple point until the radiation is introduced and the cleaning material substantially sublimes into the gaseous state.
  • the cleaning material is preferably substantially sublimed incompletely.
  • the cleaning material is applied to the surface of the object to be cleaned substantially in the form of a layer which at least partially covers the surface of the object to be cleaned.
  • the thickness of the cleaning material or the layer of the cleaning material in a direction normal to the surface of the object to be cleaned is preferably between about 10 nm and about 400 nm, particularly preferably between about 50 nm and about 200 nm.
  • cleaning material is substantially sublimed in a range preferably up to about 50 nm from the surface of the object to be cleaned, preferably up to about 10 nm from the surface of the object to be cleaned, particularly preferably up to about 1 nm from the surface of the object to be cleaned. It is also possible for preferably about 5% to about 50%, particularly preferably about 10% to about 20%, of the layer of cleaning material to be substantially sublimed from the surface of the object to be cleaned. Consequently, during the step of introducing the radiation, it is preferable at least briefly for a layer of gaseous cleaning material to be formed between the surface of the object to be cleaned and the remaining substantially solid cleaning material.
  • the solid cleaning material and/or the contamination is accelerated in the direction away from the surface of the object to be cleaned and is thrown off the surface of the object to be cleaned.
  • the solid cleaning material may preferably be substantially completely thrown off the surface, i.e. substantially the entire layer of remaining solid cleaning material is thrown off the surface.
  • the layer of cleaning material it is also possible for the layer of cleaning material to be broken up into at least two parts which are thrown off the surface of the object to be cleaned. In this case, it is advantageous for the foreign particles to be joined to the solid cleaning material, with the result that the foreign particles are also removed from the surface of the object to be cleaned.
  • the step of introducing radiation it is preferable to introduce electromagnetic radiation, in particular laser radiation.
  • the process of the present invention can be used in particular to introduce laser radiation with a lower radiant power than, for example, in the conventional DLC process. This makes it possible to avoid damage to the surface of the object to be cleaned as a result of an excessively high radiant energy.
  • the cleaning agent in the form of a solid is easier to control than, for example, a liquid film of a cleaning agent, with the result that it is possible to ensure in a simple manner that all foreign particles are covered by and/or embedded in the cleaning agent.
  • the difference between the refractive index of a foreign particle and the refractive index of the cleaning material is generally preferably lower than, for example, the difference between the refractive indices between air and a foreign particle to be removed (DLC process) or the difference in refractive index between a liquid which is used, such as a water-alcohol mixture, and the refractive index of the foreign particle to be removed (SLC process). Therefore, the optical field amplification at the foreign particles is advantageously reduced and damage to the surface of the object to be cleaned is avoided. This also reduces adhesion forces between a foreign particle and the surface of the object to be cleaned.
  • the radiant energy of the radiation introduced can substantially be absorbed by the object to be cleaned and/or substantially absorbed by the cleaning material. Consequently, the cleaning material may preferably either by heated indirectly, as a result of the object which is to be cleaned being heated by absorption of the radiant energy of the radiation introduced. However, it is also possible for the cleaning material preferably to be heated directly, by the radiant energy of the radiation introduced being substantially absorbed by the cleaning material. If the radiant energy is absorbed substantially directly by the cleaning material, it is advantageously possible to clean any desired object or a surface thereof and/or for foreign particles and/or impurities to be removed from a surface of any desired object.
  • the pressure and temperature of the cleaning material is controlled in such a manner that, as a result of introduction of the radiation, the cleaning material briefly passes through a liquid nonequilibrium state during the transition from the solid state to the gaseous state.
  • the residence time in such a state is preferably in the range of a few nanoseconds or less, preferably less than approximately 100 ns, preferably between about 0.001 ns and about 100 ns, particularly preferably less than about 10 ns, preferably between about 0.01 ns and about 10 ns.
  • the pressure and temperature are substantially not adjusted or controlled during the sublimation transition range. Rather, pressure-temperature pairs which in a conventional equilibrium phase diagram would be above the triple point briefly occur.
  • the cleaning material is moved substantially along the surface of the object and/or towards the surface of the object.
  • the cleaning material is provided in the gaseous state.
  • the preferably gaseous cleaning material can be blown along the surface of the object to be cleaned or blown towards the surface of the object to be cleaned.
  • the object to be cleaned is preferably cooled to a temperature lower than the freezing point of the gaseous cleaning material at a predetermined pressure of the gaseous cleaning material, with the result that the gaseous cleaning material is deposited as a solid on the surface of the object to be cleaned.
  • pressure and temperature of the system comprising cleaning agent and object to be cleaned to be selected in such a manner that the preferably gaseous cleaning agent, when it is being applied to the object to be cleaned, is close to the triple point of the cleaning agent.
  • pressure and temperature of the preferably gaseous cleaning agent are controlled in such a way that the step of applying the cleaning agent to the object to be cleaned is substantially a resublimation step.
  • a gaseous cleaning material during the step of applying the cleaning material, to penetrate into openings in the foreign particle and/or to penetrate into openings between the foreign particle and the surface of the object to be cleaned and then to be substantially resublimed there.
  • momentum is transmitted from the cleaning agent to the foreign particles; the direction of the momentum transmitted, on account of the cleaning agent being arranged between the foreign particle and the surface of the object to be cleaned, is substantially a direction away from the surface of the object to be cleaned. In other words, the foreign particle is thrown off the surface of the object to be cleaned.
  • cleaning material is provided in the fluid, preferably liquid state.
  • the cleaning material can be sprayed onto the surface of the object to be cleaned, in which case, after the liquid cleaning material has been applied, the cleaning material freezes to form a solid.
  • the pressure and temperature of the cleaning agent prefferably controlled in such a manner that after the cleaning material has been applied and substantially up until the step of introducing the radiation, the triple point of the cleaning agent is substantially undershot.
  • the temperature of the cleaning agent to be kept below the temperature of the triple point substantially until the radiation has been introduced and the cleaning material has substantially sublimed into the gaseous state.
  • the pressure of the cleaning agent is kept below the pressure of the triple point substantially until the radiation has been introduced and the cleaning material has substantially sublimed into the gaseous state.
  • the cleaning material can be provided in the form of solid particles. By way of example, it is possible for a multiplicity of small solid particles to be blown onto the surface of the object to be cleaned and irradiated with radiation on contact with the object to be cleaned.
  • the object to be cleaned is particularly preferably a metal, a dielectric or a semiconductor wafer, particularly preferably a silicon or germanium wafer with an optional oxide layer.
  • the object to be cleaned may be a semiconductor wafer with existing metallic structures, such as for example interconnects and/or structures of other materials, such as for example low-k materials, i.e. materials with a low dielectric constant, in particularly with a dielectric constant of less than 3.
  • the temperature of the object during the step of applying the cleaning material is lower than the sublimation point of the cleaning material.
  • laser radiation it is particularly preferable for laser radiation to be introduced during the radiation step.
  • the present invention also comprises an apparatus for removing impurities from a surface of an object, comprising:
  • a provision apparatus for providing a cleaning material or material to be removed, and - a radiation source for radiation and/or an energy source,
  • the cleaning material being applied to the surface of the object as a solid or in the solid phase
  • the cleaning material being heated by at least partial absorption of the radiant energy of the radiation by the object and/or by at least partial absorption of the radiant energy of the radiation by the cleaning material and/or by introduction of energy into the object and/or by introduction of energy into the cleaning material, in such a manner that it substantially sublimes into the gaseous state.
  • the cleaning material is moved substantially along the surface of the object and/or towards the surface of the object.
  • the provision apparatus prefferably be designed to provide the cleaning material in the gaseous state and/or in the fluid, preferably liquid state and/or in the form of solid particles.
  • the application process or deposition process of the cleaning material is particularly preferably a sublimation process.
  • the object is a metal, a dielectric or a semiconductor wafer, particularly preferably a silicon or germanium wafer with an optional oxide layer.
  • the object to be cleaned may be a semiconductor wafer with existing metallic structures, such as for example interconnects and/or structures of other materials, such as for example low-k materials.
  • the cleaning material is CO 2 and/or naphthalene and/or a noble gas.
  • the temperature of the object for deposition or application of the cleaning material prefferably be less than the sublimation point of the cleaning material.
  • the radiation source is a laser radiation source.
  • the present invention comprises the use of a cleaning material, in particular CO 2 and/or naphthalene and/or a noble gas to remove impurities and/or foreign particles, such as for example dust particles, from a surface of an object, the cleaning material being applied as a solid to at least part of the surface of the object and being heated by the introduction of radiation in such a manner that the cleaning material is substantially sublimed into the gaseous state.
  • a cleaning material in particular CO 2 and/or naphthalene and/or a noble gas to remove impurities and/or foreign particles, such as for example dust particles
  • the cleaning material may be heated by the introduction of energy.
  • the object to be cleaned may preferably be heated by electric current which flows through the object to be cleaned.
  • the cleaning agent can be heated directly, in which case energy can be transmitted into the cleaning material preferably on the basis of electric current or also preferably by particle radiation onto the cleaning material.
  • the transition of the cleaning material from the solid to a gaseous state is preferably a sublimation process.
  • Fig. 1 shows a diagrammatic sectional view of a preferred embodiment of the cleaning apparatus of the present invention during the step of applying cleaning materials
  • Fig. 2 shows a conventional pressure-temperature diagram for CO2
  • Fig. 3 shows a sectional view in accordance with Fig. 1 during the step of adjusting radiation.
  • Figure 1 shows a diagrammatic sectional view of a device 10 for removing impurities from a semiconductor substrate 12 or preferably from a surface 14 of the semiconductor substrate 12.
  • the semiconductor substrate 12 may, for example, be a conventional silicon semiconductor wafer which is used or produced for the production of semiconductor chips, for example memory chips, in the computer industry.
  • the semiconductor substrate 12 comprises the substantially planar surface 14, in which case it is also possible for the substantially planar surface 14 to have structures and/or topographies.
  • Foreign particles 16 are arranged on the substantially planar surface 14 of the semiconductor substrate 12.
  • the foreign particles 16 may, for example, be dust which has collected on the surface 14 during the manufacturing process, for example during grinding, of the semiconductor substrate 12 or the memory chip.
  • Figure 1 shows a radiation source 18.
  • the radiation source 18 may, for example, be a laser 18, for example an Nd:YAG laser or an excimer laser.
  • Figure 1 also shows a provision device 20 for providing cleaning material 22.
  • the provision device 20 may, for example, be a pressure vessel with an opening or valve or gas feed line or nozzle by which, for example, CO 2 gas 22 can be blown onto the semiconductor substrate 12 as preferred cleaning agent 22.
  • the provision apparatus 20 is arranged substantially perpendicular to the surface 14 of the semiconductor substrate 12, so that the CO 2 gas 22 impinges on the surface 14 substantially perpendicular to a normal direction NR to the surface 14.
  • the provision apparatus 22 it is also possible for the provision apparatus 22 to be arranged substantially parallel to the surface 14, i.e.
  • the provision apparatus 20 may be arranged movably, making it possible for the cleaning material 22 to be applied to any desired regions of the surface 14. If, for example, a liquid cleaning material 22 is used, the provision apparatus 20 is of corresponding design.
  • the semiconductor substrate 12 is cooled to a temperature T below the freezing point of the CO 2 gas 22 at a predetermined pressure p.
  • a nitrogen or argon atmosphere which prevents water from water vapour which is present in the working atmosphere, from accumulating on the object 12 to be cleaned.
  • the object 12 to be cleaned is in a gas atmosphere which substantially comprises, for example, argon gas and/or nitrogen gas and/or for example another noble gas, in which case the gas atmosphere is held substantially at ambient pressure, i.e. at approximately 1013hPa.
  • the CO 2 gas 22 is in this case deposited on the semiconductor substrate 12 in the form of a solid.
  • pressure p and temperature T of the CO 2 gas 22 are preferably selected in such a way that the triple point TP for the solid CO 2 22 is undershot.
  • this substantially involves pressure-temperature pairs which are in the hatched region.
  • PSK corresponds to a pressure along the sublimation curve SK
  • PTP corresponds to the pressure at the triple point TP.
  • Figure 3 shows a sectional view in accordance with Figure 1 , in which CO2 22 has been applied or deposited as a solid on the surface 14 of the semiconductor substrate 12.
  • the deposition or application process is preferably a resublimation process RS.
  • the thickness of the deposited solid CO 2 22 layer can be monitored in situ, in which case it is typical to produce thicknesses from approximately 10 nm to approximately 400 nm.
  • the thickness of CO 2 22 deposited can be monitored, for example, on the basis of interferometric methods. In particular, the thickness of CO 2 22 deposited can be monitored both during the deposition process and after the deposition has ended.
  • the laser radiation source 18 electromagnetic laser radiation 24 is radiated onto the solid CO 2 22.
  • the CO 2 22 is predominantly substantially sublimed, i.e. the solid CO 2 22 substantially sublimes in regions which are irradiated with the laser irradiation 24. In boundary regions which the laser radiation 24 does not touch and/or which adjoin irradiated regions, it is in particular possible to briefly adopt a liquid phase state well away from the thermal equilibrium.
  • the laser radiation source 18 is an Nd:YAG laser which introduces electromagnetic laser radiation 24 with a wavelength of 532 nm and an energy density from approximately 50 mJ/cm 2 up to approximately 300 mJ/cm 2 .
  • the solid CO 2 22 is substantially transparent to laser radiation 24 of this wavelength, so that the laser radiation 24 is substantially absorbed by the semiconductor substrate.
  • the laser radiation source 18 is preferably arranged movably, so that the laser radiation 24 introduced substantially strikes regions of the surface 14 of the semiconductor substrate 12 or of the solid CO 2 22 at which foreign particles 16, such as for example dust particles, are present. Therefore, on the basis of the preferred variant embodiment of the present invention, it is advantageously possible for impurities such as for example foreign particles 16 to be deliberately locally removed. Therefore, cleaning of the entire surface 14 of the semiconductor substrate 12 is not necessary, with the result that the throughput can be considerably increased and the preferred variant embodiment of the present invention can be used effectively and at low cost.
  • the laser radiation 24 is substantially absorbed by the semiconductor substrate 12 and therefore heats the semiconductor substrate 12. It is preferable for the energy density of the laser radiation 24 introduced to be lower than what is known as the melting threshold of the semiconductor substrate 12, i.e. the energy density which has to be supplied for the semiconductor substrate 12 to just start to melt. In this preferred embodiment, the melting threshold of the silicon semiconductor substrate is approximately 310 mJ/cm 2 . It is advantageous for the laser radiation 24 substantially not to be focused by the solid CO 2 22, with the result that incipient melting at the semiconductor substrate 12 and therefore damage to the surface 14 with an introduced energy density below the melting threshold of the semiconductor substrate 12 is avoided.
  • the solid CO 2 22 is "explosively" converted into the gaseous phase, in which case, on account of the pressure selected, a sublimation process S (cf. Figure 2) from solid CO 2 22 into the gaseous state takes place.
  • a sublimation process S (cf. Figure 2) from solid CO 2 22 into the gaseous state takes place.
  • the foreign particles 16 are thrown off the surface 14 of the semiconductor substrate 12.
  • the wavelength of the laser radiation 24 can be selected in such a manner that the laser radiation 24 is absorbed by the cleaning material 22 i.e. the radiant energy of the laser radiation 24 directly heats the cleaning material and converts it into the gaseous phase.
  • the wavelength of the laser radiation 24 can be selected in such a manner that the laser radiation 24 is absorbed by the cleaning material 22 i.e. the radiant energy of the laser radiation 24 directly heats the cleaning material and converts it into the gaseous phase.
  • CO 2 22 is used as cleaning agent, it is possible to use a CO 2 laser which generates laser radiation with a wavelength of 10.6 ⁇ m. Laser radiation of this wavelength is substantially absorbed by the solid CO 2 22 and therefore heats the solid CO 2 substantially directly. Therefore, it is advantageously possible for foreign particles 16 to be removed from any desired object as the surface to be cleaned.
  • the liquid nonequilibrium state is briefly also adopted during the transition of the solid cleaning agent 22, i.e. for example the solid CO 2 22, into the gaseous state.
  • the liquid state far from the thermal equilibrium is in this case adopted briefly, i.e. for a short period of time amounting to a few nanoseconds or less preferably between approximately 1 ns and approximately 100 ns, particularly preferably between approximately 5 ns and approximately 10 ns.
  • this state is not a thermal equilibrium state, it is possible in this context to speak of "substantial sublimation”.
  • the dashed line L is substantially intended to indicate a transition from the solid phase to the gaseous phase, since a phase diagram by definition only applies in the equilibrium state. During this transition, sufficient momentum is transmitted to the foreign particles 16, such as for example dust particles, so that the foreign particles 16 are thrown off the surface 14 of the semiconductor substrate 12.
  • the preferred embodiment of the present invention comprises a blowing device or suction device 26.
  • a blowing device or suction device 26 By means of the blowing device 26, foreign particles 16 or fragments of the solid CO 2 22 or combinations of foreign particles 16 with solid CO 2 22, which have been thrown off the surface 14 of the semiconductor substrate 12 to be cleaned on account of the preferred process of the invention described above by way of example, can be blown or sucked off the surface 14 of the semiconductor substrate 12 to be cleaned and/or the semiconductor substrate 12 which is to be cleaned. Contamination of the surface 14 of the semiconductor substrate 12 to be cleaned as a result of foreign particles 16 which have already been removed is in this way substantially avoided.
  • the preferred components of the apparatus 10 described above it is preferable for the preferred components of the apparatus 10 described above to be arranged in a housing or chamber 28 in which the pressure and temperature can be controlled or set and/or a suitable atmosphere, such as for example a nitrogen and/or argon atmosphere, can be produced.
  • the laser radiation source 18 may be arranged substantially perpendicular to the surface 14 of the semiconductor substrate with the blowing or suction device 26 preferably being arranged substantially at an angle of approximately 45° with respect to the normal direction NR to the surface 14. Also preferably, the laser radiation source 18 may be arranged at an angle other than approximately 45° with respect to the normal direction NR to the surface 14. Furthermore, the laser radiation source 18 may also be a laser other than an Nd:YAG laser.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)

Abstract

L'invention concerne un procédé permettant d'éliminer des impuretés de la surface (14) d'un objet (12) et comprenant les étapes consistant: à utiliser un matériau de nettoyage (22); à appliquer le matériau de nettoyage (22) comme un solide sur au moins une partie de la surface (14) de l'objet (12) à nettoyer; à introduire un rayonnement (24) dont l'énergie est au moins partiellement absorbée par l'objet (12) et/ou le matériau de nettoyage (22), d'une manière telle que celui-ci (22) est chauffé et se sublime sensiblement en l'état gazeux (S; L) ; et un appareil permettant d'éliminer des impuretés de la surface d'un objet, ainsi que l'utilisation d'un agent de nettoyage permettant d'éliminer des impuretés de la surface d'un objet.
PCT/EP2005/012055 2004-11-10 2005-11-10 Procede et appareil permettant d'eliminer des impuretes et utilisation d'un agent de nettoyage WO2006050950A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200410054320 DE102004054320A1 (de) 2004-11-10 2004-11-10 Verfahren und Vorrichtung zum Entfernen von Verunreinigungen und Verwendung eines Reinigungsmittels
DE102004054320.8 2004-11-10

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WO2006050950A1 true WO2006050950A1 (fr) 2006-05-18

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3089436A1 (fr) * 2018-12-11 2020-06-12 Addup Procédé de nettoyage d’une pièce fabriquée par un procédé de fabrication additive par immersion, solidification et vibrations
US11859153B2 (en) * 2021-11-08 2024-01-02 Changxin Memory Technologies, Inc. Method for cleaning substrate and system for cleaning substrate

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