WO2006048353A1 - Dispositif pour structurer un faisceau de particules - Google Patents

Dispositif pour structurer un faisceau de particules Download PDF

Info

Publication number
WO2006048353A1
WO2006048353A1 PCT/EP2005/054517 EP2005054517W WO2006048353A1 WO 2006048353 A1 WO2006048353 A1 WO 2006048353A1 EP 2005054517 W EP2005054517 W EP 2005054517W WO 2006048353 A1 WO2006048353 A1 WO 2006048353A1
Authority
WO
WIPO (PCT)
Prior art keywords
aperture plate
openings
aperture
particle beam
plate
Prior art date
Application number
PCT/EP2005/054517
Other languages
German (de)
English (en)
Inventor
Hans-Joachim Döring
Joachim Heinitz
Original Assignee
Leica Microsystems Lithography Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leica Microsystems Lithography Gmbh filed Critical Leica Microsystems Lithography Gmbh
Publication of WO2006048353A1 publication Critical patent/WO2006048353A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Definitions

  • the invention relates to a device for structuring a particle beam.
  • the invention relates to a device for structuring a particle beam, wherein the particle beam at least partially illuminates the device surface and the device is provided with a plurality of successively connected aperture plates.
  • U.S. U.S. Patent 4,153,843 discloses a multiple beam exposure system. For this purpose, a two-dimensional array with a plurality of openings is provided in the beam path of an electron beam exposure system. The array is illuminated areally by the electron beam and reduced to a substrate. Only a single aperture plate is provided, which generates the multiple individual electron beams from the planar illumination.
  • US patent application US 2003/0155534 A1 discloses a maskless exposure system for particle beams.
  • a plurality of successively nested aperture plates produce a plurality of individual beams from an electron beam.
  • the top two plates and the bottom plate have openings through which the electron beam passes.
  • Each of the plates has a thickness of about 100 m and are separated from each other a distance of 100 m to 1 mm apart.
  • an array of correction lenses is provided, which is arranged in front of the last aperture plate.
  • U.S. U.S. Patent 5,144,142 discloses a particle beam system including an aperture plate for masking corresponding sub-beams.
  • the single aperture plate comprises m-rows and n-columns of apertures arranged two-dimensionally on a substrate. Every opening is one
  • n x m-bit shift registers are provided on the substrate to supply voltages corresponding to the pattern data to the m pairs of the deflection electrodes.
  • Aperture plate is formed only as a single component.
  • the invention has for its object to provide a device for structuring, a particle beam, which is inexpensive to produce and at the same time generates individual particle beams with a precisely defined Oueritessform the particle beam.
  • Particle beam is illuminated at least partially flat.
  • the device is provided with a plurality of successive aperture plates.
  • a first aperture plate of the planar particle beam generates a plurality of partial beams through a multiplicity of openings.
  • This is followed by a second aperture plate which has smaller openings than the first aperture plate.
  • a third aperture plate which is a blanking plate, is provided in front of a fourth aperture plate, which serves for field homogenization.
  • the first aperture plate, the second aperture plate, the third aperture plate and the fourth aperture plate are arranged so as to be aligned along each center of each aperture.
  • Each of the openings in each of the aperture plates has a square section.
  • the first aperture plate has a greater thickness than the second aperture plate.
  • the openings in the second aperture plate are smaller than the openings in the first aperture plate, in the third aperture plate and in the fourth aperture plate.
  • the third aperture plate on the side facing away from the incident particle beam has a drive circuit, and a deflector for the particle beam assigned to each aperture.
  • the deflector is an electrostatic deflector.
  • Fig. 1 is a schematic representation of the structure of an entire
  • Fig. 2 is a schematic representation of the device for
  • Figure 1 shows schematically the structure of an entire system for maskless electron beam lithography.
  • an electron beam 31 is generated, which propagates in the direction of an electron-optical axis 32.
  • Electron gun 30 leaking electrons have a source crossover
  • the electron gun 30 is followed by a beam centering device 33, which is the electron beam symmetrical about the optical axis
  • the electron beam 31 passes through a condenser system 10 which forms a parallel beam from the initially divergent electron beam 31.
  • the beam formed by the condenser system 10 has a diameter over which the intensity is homogeneously distributed.
  • a planar object 34 is provided.
  • the planar object 34 is an aperture plate or an aperture plate system 50.
  • the aperture plate system 50 is provided with a plurality of openings for producing a plurality of parallel beams 36.
  • a baffle plate 35 having a plurality of beam deflection units.
  • an accelerating lens 39 which increases the energy of the electrons in the electron beam 31 and then a first
  • the Illustration creates a second intermediate image of the crossover 31 2 .
  • the undeflected beams 36 strike the target 6, which is for example a wafer, they pass through an objective lens 41.
  • the objective lens 41 is equipped with a plurality of elements.
  • two deflectors 45 and 46 are provided before and after a second crossover 31 2 of the electron beam 31.
  • the deflectors 45 and 46 serve to deflect and position the electron beam 31 and the plurality of undeflected beams 36 in the target 6, respectively.
  • the two independently controllable deflectors 45 and 46 are advantageously used to separately optimize slow and fast deflections.
  • the fast deflection system 46 is preferably constructed as an electrostatic system.
  • a slow but highly accurate magnetic deflection system 45 is preferably used. In order to minimize the deflection errors of the magnetic deflection system 45, this may be formed as a multi-level deflection system.
  • stigmators 44 are provided, which are preferably constructed as multilayer magnetic coil systems to Astigmatismen and
  • the objective lens 41 has a height measuring system 42 which scans at the landing point of the electron beam at the target 6.
  • the height measuring system 42 serves to detect unevenness of the target 6 (for example wafers) and of
  • a detector 43 for the particles or electrons backscattered by target 6 is located near the beam impingement point. This detector 43 serves the Position determination of marks on the target 6 for the purpose of covering several exposure planes or for calibrating control elements of an exposure system.
  • three correction lens pairs 23, 24, 25 are located in the lower region of the corpuscular beam device 2. The correction lenses 23, 24, 25 serve for the dynamic correction of the focus, image field size and field rotation during the exposure of the continuously moving target 6.
  • the correction lens system 23, 24 , 25 allows the correction of errors caused by height variations of the target, as well as by variable space charges in the column area.
  • FIG. 2 shows a schematic representation of a device 50 for structuring a particle beam 31.
  • the device 50 for structuring the particle beam 31 comprises a first aperture plate 51, a second aperture plate 52, a third aperture plate 53 and a fourth aperture plate 54.
  • the particle beam incident in the direction of the optical axis 32 illuminates the first aperture plate 51 over a large area.
  • a plurality of openings 61 are formed, which have a substantially square cross-section.
  • the first aperture plate 51 is made of silicon and has a thickness 51 D of about 20 ⁇ m to 100 m.
  • the first aperture plate 51 is followed by a second aperture plate 52.
  • Apertures 62 are also formed in the second aperture plate.
  • the second aperture plate 52 is followed by a third aperture plate 53, in which also a plurality of openings 63 are formed.
  • the third aperture plate 53 is followed by a fourth aperture plate 54, in which also a plurality of openings 64 are formed. All openings 61, 62, 63, 64 in the first aperture plate 51, in the second aperture plate 52, in the third aperture plate 53 and in the fourth aperture plate 54 have a square cross section.
  • the opening 61 in the first aperture plate has a larger dimension 71 than the opening 62 in the second aperture plate 52.
  • Aperture plate 51 downstream aperture plate 52 has a thickness 52 D of a few micrometers and the openings 62 have a highly accurate square cross section.
  • High accuracy in this context means that the cross section complies with a tolerance ⁇ 100nm for the absolute dimensional accuracy in x and y and the corner radii and the edge roughness ⁇ 100nm.
  • the openings 62 in the second aperture plate 52 have a dimension 72 which is smaller than the dimension 71 of the opening 61 in the first aperture plate 51.
  • a typical ratio for the dimensions of the openings 71: 72 is 2 ... 3, assuming absolute dimensions of 6 ... 3 ⁇ m for the opening 62.
  • the first aperture plate 51 is, as already mentioned, illuminated area by the incident electron beam 31 and thereby generates through the openings 61 a plurality of partial beams, the cross-section of the
  • the first aperture plate 51 not only serves to generate a plurality of partial beams, but also serves to dissipate the excess heat generated by the incident electron beam 31.
  • the partial beams produced by the first aperture plate 51 strike the second aperture plate 52, wherein the apertures 62 in the second aperture plate 52 produce the form-defined partial beam 80 required for imaging.
  • the form-defined partial beam 80 impinges on the third aperture plate 53, in which openings 63 are formed, which likewise have a larger dimension 73 than the openings 62 in the second aperture plate 52.
  • the third aperture plate 53 has a drive circuit on the side facing away from the incident particle beam 31 55, which generates the signals required for the deflection of the form-defined partial beam 80.
  • the third aperture plate 53 has a thickness 53 D of approximately 20 ⁇ m to 100 m.
  • the fourth aperture plate 54 has a thickness 54 D of about 20 ⁇ m to 100 m.
  • a deflector 56 for the shape-defined partial beam 80 is assigned.
  • the third aperture plate 53 is followed by a fourth aperture plate 54, in which openings 64 are likewise provided which are approximately the same or slightly larger
  • the first aperture plate 51, the second aperture plate 52, the third aperture plate 53 and the fourth aperture plate 54 are arranged to each other such that all openings 61, 62, 63, 64 are aligned along a center axis 81.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Particle Accelerators (AREA)
  • Radiation-Therapy Devices (AREA)

Abstract

L'invention concerne un dispositif (50) servant à structurer un faisceau de particules (31), le faisceau de particules (31) illuminant le dispositif (50) de manière au moins partiellement plane. Le dispositif (50) selon l'invention comprend une multitude de plaques à ouverture (51, 52, 53, 54) placées en cascade. Vu dans le sens du faisceau de particules (31), une première plaque à ouverture (51) génère, à partir du faisceau de particules plan, plusieurs faisceaux partiels à travers une multitude d'orifices (61). Une deuxième plaque à ouverture (52) présentant des orifices plus petits (62) que la première plaque à ouverture (51) est placée en aval de cette dernière. Elle est suivie d'une troisième plaque à ouverture (53) qui constitue une plaque d'obturation, une quatrième plaque à ouverture (54) servant à l'homogénéisation du champ.
PCT/EP2005/054517 2004-11-03 2005-09-12 Dispositif pour structurer un faisceau de particules WO2006048353A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004052995.7 2004-11-03
DE200410052995 DE102004052995A1 (de) 2004-11-03 2004-11-03 Vorrichtung zur Strukturierung eines Partikelstrahls

Publications (1)

Publication Number Publication Date
WO2006048353A1 true WO2006048353A1 (fr) 2006-05-11

Family

ID=35432293

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2005/054517 WO2006048353A1 (fr) 2004-11-03 2005-09-12 Dispositif pour structurer un faisceau de particules

Country Status (3)

Country Link
DE (1) DE102004052995A1 (fr)
TW (1) TW200615998A (fr)
WO (1) WO2006048353A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6014200A (en) * 1998-02-24 2000-01-11 Nikon Corporation High throughput electron beam lithography system
US6455863B1 (en) * 1999-06-09 2002-09-24 Applied Materials, Inc. Apparatus and method for forming a charged particle beam of arbitrary shape
EP1253619A2 (fr) * 2001-04-23 2002-10-30 Canon Kabushiki Kaisha Appareil d'exposition à faisceau de particules chargées et procédé pour son utilisation dans la fabrication de dispositifs
US20020162088A1 (en) * 2001-02-23 2002-10-31 Kabushiki Kaisha Toshiba Charged particle beam exposure system using aperture mask in semiconductor manufacture
US20030155534A1 (en) * 2002-01-17 2003-08-21 Elmar Platzgummer Maskless particle-beam system for exposing a pattern on a substrate
US20040149935A1 (en) * 2000-07-27 2004-08-05 Kabushiki Kaisha Toshiba Charged beam exposure apparatus having blanking aperture and basic figure aperture

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1100237A (fr) * 1977-03-23 1981-04-28 Roger F.W. Pease Traduction non-disponible
JPS5557246A (en) * 1978-10-23 1980-04-26 Jeol Ltd Electron-ray contracting apparatus and its manufacturing method
US5144142A (en) * 1989-05-19 1992-09-01 Fujitsu Limited Blanking aperture array, method for producing blanking aperture array, charged particle beam exposure apparatus and charged particle beam exposure method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6014200A (en) * 1998-02-24 2000-01-11 Nikon Corporation High throughput electron beam lithography system
US6455863B1 (en) * 1999-06-09 2002-09-24 Applied Materials, Inc. Apparatus and method for forming a charged particle beam of arbitrary shape
US20040149935A1 (en) * 2000-07-27 2004-08-05 Kabushiki Kaisha Toshiba Charged beam exposure apparatus having blanking aperture and basic figure aperture
US20020162088A1 (en) * 2001-02-23 2002-10-31 Kabushiki Kaisha Toshiba Charged particle beam exposure system using aperture mask in semiconductor manufacture
EP1253619A2 (fr) * 2001-04-23 2002-10-30 Canon Kabushiki Kaisha Appareil d'exposition à faisceau de particules chargées et procédé pour son utilisation dans la fabrication de dispositifs
US20030155534A1 (en) * 2002-01-17 2003-08-21 Elmar Platzgummer Maskless particle-beam system for exposing a pattern on a substrate

Also Published As

Publication number Publication date
DE102004052995A1 (de) 2006-05-11
TW200615998A (en) 2006-05-16

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