TW200615998A - Device to structurize a particle-radiation - Google Patents

Device to structurize a particle-radiation

Info

Publication number
TW200615998A
TW200615998A TW094137589A TW94137589A TW200615998A TW 200615998 A TW200615998 A TW 200615998A TW 094137589 A TW094137589 A TW 094137589A TW 94137589 A TW94137589 A TW 94137589A TW 200615998 A TW200615998 A TW 200615998A
Authority
TW
Taiwan
Prior art keywords
aperture
plate
radiation
particle
structurize
Prior art date
Application number
TW094137589A
Other languages
Chinese (zh)
Inventor
Hans-Joachim Doring
Joachim Heinitz
Original Assignee
Leica Microsys Lithography Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leica Microsys Lithography Ltd filed Critical Leica Microsys Lithography Ltd
Publication of TW200615998A publication Critical patent/TW200615998A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Abstract

A device (50) to structuralize a particle-radiation (31) is disclosed. The particle-radiation (31) irradiates the device (50) at least one part in a flat method. The device (50) is provided with a number of sequentially connected aperture-plates (51, 52, 53, 54). To view from the direction of the particle-radiation (31), the first aperture-plate (51) generates several partial radiations from the flat particle-radiation through several openings (61). A second aperture-plate (52), which has smaller openings (62) than the first aperture-plate (51), is connected after the first aperture-plate (51). A third aperture-plate (53) following the second aperture-plate (52) is a blanking-plate, and the fourth aperture-plate (54) is used to homogenize a field.
TW094137589A 2004-11-03 2005-10-27 Device to structurize a particle-radiation TW200615998A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE200410052995 DE102004052995A1 (en) 2004-11-03 2004-11-03 Device for structuring a particle beam

Publications (1)

Publication Number Publication Date
TW200615998A true TW200615998A (en) 2006-05-16

Family

ID=35432293

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094137589A TW200615998A (en) 2004-11-03 2005-10-27 Device to structurize a particle-radiation

Country Status (3)

Country Link
DE (1) DE102004052995A1 (en)
TW (1) TW200615998A (en)
WO (1) WO2006048353A1 (en)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1100237A (en) * 1977-03-23 1981-04-28 Roger F.W. Pease Multiple electron beam exposure system
JPS5557246A (en) * 1978-10-23 1980-04-26 Jeol Ltd Electron-ray contracting apparatus and its manufacturing method
DE69017095T2 (en) * 1989-05-19 1995-06-14 Fujitsu Ltd Arrangement of beam blanking diaphragms, method for producing the same, apparatus and method for exposing particles charged with a beam.
US6014200A (en) * 1998-02-24 2000-01-11 Nikon Corporation High throughput electron beam lithography system
US6455863B1 (en) * 1999-06-09 2002-09-24 Applied Materials, Inc. Apparatus and method for forming a charged particle beam of arbitrary shape
JP2002118060A (en) * 2000-07-27 2002-04-19 Toshiba Corp Charged particle beam projection aligner, charged particle beam exposure method, exposure data creation method, computer-readable recording medium with program for creating exposure data stored, and computer with exposure data stored therein
US6718532B2 (en) * 2001-02-23 2004-04-06 Kabushiki Kaisha Toshiba Charged particle beam exposure system using aperture mask in semiconductor manufacture
JP4647820B2 (en) * 2001-04-23 2011-03-09 キヤノン株式会社 Charged particle beam drawing apparatus and device manufacturing method
US6768125B2 (en) * 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate

Also Published As

Publication number Publication date
DE102004052995A1 (en) 2006-05-11
WO2006048353A1 (en) 2006-05-11

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