WO2006041656A3 - Methods and apparatus for monitoring a process in a plasma processing system by measuring a plasma frequency - Google Patents

Methods and apparatus for monitoring a process in a plasma processing system by measuring a plasma frequency Download PDF

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Publication number
WO2006041656A3
WO2006041656A3 PCT/US2005/034312 US2005034312W WO2006041656A3 WO 2006041656 A3 WO2006041656 A3 WO 2006041656A3 US 2005034312 W US2005034312 W US 2005034312W WO 2006041656 A3 WO2006041656 A3 WO 2006041656A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
plasma processing
value
processing chamber
processing system
Prior art date
Application number
PCT/US2005/034312
Other languages
French (fr)
Other versions
WO2006041656B1 (en
WO2006041656A2 (en
Inventor
Chia Cheng Cheng
Timothy J Guiney
Rao Annapragada
Subhash Deshmukh
Original Assignee
Lam Res Corp
Chia Cheng Cheng
Timothy J Guiney
Rao Annapragada
Subhash Deshmukh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp, Chia Cheng Cheng, Timothy J Guiney, Rao Annapragada, Subhash Deshmukh filed Critical Lam Res Corp
Priority to JP2007533684A priority Critical patent/JP2008515199A/en
Publication of WO2006041656A2 publication Critical patent/WO2006041656A2/en
Publication of WO2006041656A3 publication Critical patent/WO2006041656A3/en
Publication of WO2006041656B1 publication Critical patent/WO2006041656B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber. The method further includes obtaining a measured plasma frequency that exists after the plasma is struck, the measured plasma frequency value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. The method also includes correlating the measured plasma frequency value with an attribute of the process, if the measured plasma frequency value is outside of a predefined plasma frequency value envelope.
PCT/US2005/034312 2004-09-27 2005-09-23 Methods and apparatus for monitoring a process in a plasma processing system by measuring a plasma frequency WO2006041656A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007533684A JP2008515199A (en) 2004-09-27 2005-09-23 Process monitoring method and apparatus for plasma processing system by plasma frequency measurement

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/952,562 2004-09-27
US10/952,562 US20060065632A1 (en) 2004-09-27 2004-09-27 Methods and apparatus for monitoring a process in a plasma processing system by measuring a plasma frequency

Publications (3)

Publication Number Publication Date
WO2006041656A2 WO2006041656A2 (en) 2006-04-20
WO2006041656A3 true WO2006041656A3 (en) 2007-06-14
WO2006041656B1 WO2006041656B1 (en) 2007-08-09

Family

ID=36097838

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/034312 WO2006041656A2 (en) 2004-09-27 2005-09-23 Methods and apparatus for monitoring a process in a plasma processing system by measuring a plasma frequency

Country Status (6)

Country Link
US (1) US20060065632A1 (en)
JP (1) JP2008515199A (en)
KR (1) KR20070068420A (en)
CN (1) CN101088149A (en)
TW (1) TW200624600A (en)
WO (1) WO2006041656A2 (en)

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JP4416569B2 (en) * 2004-05-24 2010-02-17 キヤノン株式会社 Deposited film forming method and deposited film forming apparatus
US7323116B2 (en) * 2004-09-27 2008-01-29 Lam Research Corporation Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage
KR100784824B1 (en) * 2005-11-04 2007-12-14 한국표준과학연구원 Plasma diagnostic apparatus and method
US7902991B2 (en) * 2006-09-21 2011-03-08 Applied Materials, Inc. Frequency monitoring to detect plasma process abnormality
US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US9530620B2 (en) 2013-03-15 2016-12-27 Lam Research Corporation Dual control modes
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
CN102721670B (en) * 2012-06-28 2014-06-04 南京邮电大学 Method for measuring frequency of semiconductor plasma
JP6113450B2 (en) * 2012-09-07 2017-04-12 株式会社ダイヘン Impedance adjustment device
US9408288B2 (en) 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
US9043525B2 (en) 2012-12-14 2015-05-26 Lam Research Corporation Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool
US9155182B2 (en) 2013-01-11 2015-10-06 Lam Research Corporation Tuning a parameter associated with plasma impedance
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
US9107284B2 (en) 2013-03-13 2015-08-11 Lam Research Corporation Chamber matching using voltage control mode
US9119283B2 (en) 2013-03-14 2015-08-25 Lam Research Corporation Chamber matching for power control mode
US9502221B2 (en) * 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
KR102021961B1 (en) * 2014-01-13 2019-11-04 삼성전자주식회사 method for managing a semiconductor manufacturing equipment
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
JP2018041217A (en) * 2016-09-06 2018-03-15 東京エレクトロン株式会社 Abnormality detection method and semiconductor manufacturing apparatus
CN111937114A (en) * 2018-04-13 2020-11-13 东京毅力科创株式会社 Apparatus and method for controlling ion energy distribution while processing plasma

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010025691A1 (en) * 2000-03-24 2001-10-04 Seiichiro Kanno Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe
US20030178140A1 (en) * 2002-03-25 2003-09-25 Mitsubishi Denki Kabushiki Kaisha Plasma processing apparatus capable of evaluating process performance
US20040027209A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Fixed matching network with increased match range capabilities

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US5863376A (en) * 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US6197116B1 (en) * 1996-08-29 2001-03-06 Fujitsu Limited Plasma processing system
US6063234A (en) * 1997-09-10 2000-05-16 Lam Research Corporation Temperature sensing system for use in a radio frequency environment
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
US6302966B1 (en) * 1999-11-15 2001-10-16 Lam Research Corporation Temperature control system for plasma processing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010025691A1 (en) * 2000-03-24 2001-10-04 Seiichiro Kanno Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe
US20030178140A1 (en) * 2002-03-25 2003-09-25 Mitsubishi Denki Kabushiki Kaisha Plasma processing apparatus capable of evaluating process performance
US20040027209A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Fixed matching network with increased match range capabilities

Also Published As

Publication number Publication date
JP2008515199A (en) 2008-05-08
US20060065632A1 (en) 2006-03-30
WO2006041656B1 (en) 2007-08-09
WO2006041656A2 (en) 2006-04-20
TW200624600A (en) 2006-07-16
CN101088149A (en) 2007-12-12
KR20070068420A (en) 2007-06-29

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