WO2006039554A3 - Microelectromechanical bandpass filters for radio frequency signal processing - Google Patents

Microelectromechanical bandpass filters for radio frequency signal processing Download PDF

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Publication number
WO2006039554A3
WO2006039554A3 PCT/US2005/035304 US2005035304W WO2006039554A3 WO 2006039554 A3 WO2006039554 A3 WO 2006039554A3 US 2005035304 W US2005035304 W US 2005035304W WO 2006039554 A3 WO2006039554 A3 WO 2006039554A3
Authority
WO
WIPO (PCT)
Prior art keywords
signal processing
radio frequency
microelectromechanical
extensional
membrane
Prior art date
Application number
PCT/US2005/035304
Other languages
French (fr)
Other versions
WO2006039554A2 (en
Inventor
Qi-Huo Wei
Kai-Hung Su
Nicholas Xuan-Lai Fang
Xiang Zhang
Original Assignee
Univ California
Qi-Huo Wei
Kai-Hung Su
Nicholas Xuan-Lai Fang
Xiang Zhang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California, Qi-Huo Wei, Kai-Hung Su, Nicholas Xuan-Lai Fang, Xiang Zhang filed Critical Univ California
Publication of WO2006039554A2 publication Critical patent/WO2006039554A2/en
Publication of WO2006039554A3 publication Critical patent/WO2006039554A3/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H2009/241—Bulk-mode MEMS resonators

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

A set of extensional-mode microelectromechanical (MEMS) filters has been designed to achieve high resonant frequency, and high quality factors for radio frequency applications. The filter designs comprising a membrane (16) including a plurality of spaced-apart periodic variations or holes (20) forming an array (18) that attenuates acoustic waves incident on the membrane (16) and having a wavelength greater than the spacing (S) between the periodic variations or holes (20), allow for easy coupling of individual resonators to form narrow band-pass filters for signal processing, and robust fabrication. The filter designs also eliminate energy dissipation into anchoring points and may be used for the general purpose of enhancing Q-factor in any extensional micro-mechanical devices.
PCT/US2005/035304 2004-10-01 2005-09-30 Microelectromechanical bandpass filters for radio frequency signal processing WO2006039554A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61532304P 2004-10-01 2004-10-01
US60/615,323 2004-10-01

Publications (2)

Publication Number Publication Date
WO2006039554A2 WO2006039554A2 (en) 2006-04-13
WO2006039554A3 true WO2006039554A3 (en) 2006-09-08

Family

ID=36143106

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/035304 WO2006039554A2 (en) 2004-10-01 2005-09-30 Microelectromechanical bandpass filters for radio frequency signal processing

Country Status (1)

Country Link
WO (1) WO2006039554A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389943A (en) * 1991-02-15 1995-02-14 Lockheed Sanders, Inc. Filter utilizing a frequency selective non-conductive dielectric structure
US6424237B1 (en) * 2000-12-21 2002-07-23 Agilent Technologies, Inc. Bulk acoustic resonator perimeter reflection system
US6486751B1 (en) * 2000-09-26 2002-11-26 Agere Systems Inc. Increased bandwidth thin film resonator having a columnar structure
US6657363B1 (en) * 1998-05-08 2003-12-02 Infineon Technologies Ag Thin film piezoelectric resonator

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389943A (en) * 1991-02-15 1995-02-14 Lockheed Sanders, Inc. Filter utilizing a frequency selective non-conductive dielectric structure
US6657363B1 (en) * 1998-05-08 2003-12-02 Infineon Technologies Ag Thin film piezoelectric resonator
US6486751B1 (en) * 2000-09-26 2002-11-26 Agere Systems Inc. Increased bandwidth thin film resonator having a columnar structure
US6424237B1 (en) * 2000-12-21 2002-07-23 Agilent Technologies, Inc. Bulk acoustic resonator perimeter reflection system

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KHELIF A. ET AL.: "Guiding and Filtering Acoustic waves in a Two-Dimensional Phononic Crystal", 2004 IEEE ULTRASONICS SYMPOSIUM, vol. 1, 23 August 2004 (2004-08-23) - 27 August 2004 (2004-08-27), pages 654 - 657, XP010784030 *
TANAKA Y. ET AL.: "Acoustic Stop Bands of Surface and Bulk Modes in Two-Dimensional Phononic Lattices Consisting of Aluminum and a Polymer", THE AMERICAN PHYSICAL SOCIETY PHYSICAL REVIEW B, vol. 60, no. 19, 15 November 1999 (1999-11-15), pages 13294 - 13297, XP008070782 *

Also Published As

Publication number Publication date
WO2006039554A2 (en) 2006-04-13

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