WO2006036820A3 - Procede et appareil de controle d'un traitement dans un systeme de traitement plasma par mesure d'impedance - Google Patents

Procede et appareil de controle d'un traitement dans un systeme de traitement plasma par mesure d'impedance Download PDF

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Publication number
WO2006036820A3
WO2006036820A3 PCT/US2005/034226 US2005034226W WO2006036820A3 WO 2006036820 A3 WO2006036820 A3 WO 2006036820A3 US 2005034226 W US2005034226 W US 2005034226W WO 2006036820 A3 WO2006036820 A3 WO 2006036820A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma processing
plasma
value
processing chamber
processing system
Prior art date
Application number
PCT/US2005/034226
Other languages
English (en)
Other versions
WO2006036820A2 (fr
Inventor
Chia Cheng Cheng
Timothy J Guiney
Rao Annapragada
Subhash Deshmukh
Original Assignee
Lam Res Corp
Chia Cheng Cheng
Timothy J Guiney
Rao Annapragada
Subhash Deshmukh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp, Chia Cheng Cheng, Timothy J Guiney, Rao Annapragada, Subhash Deshmukh filed Critical Lam Res Corp
Priority to JP2007533668A priority Critical patent/JP2008515197A/ja
Publication of WO2006036820A2 publication Critical patent/WO2006036820A2/fr
Publication of WO2006036820A3 publication Critical patent/WO2006036820A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

L'invention concerne un procédé de contrôle in situ d'un traitement dans un système de traitement plasma comprenant une chambre de traitement plasma. Le procédé de l'invention consiste à positionner un substrat dans la chambre de traitement plasma ; à projeter un plasma dans la chambre de traitement plasma pendant que le substrat est disposé dans celle-ci ; à obtenir une impédance mesurée après projection du plasma, la valeur de l'impédance mesurée présentant une première valeur lorsque le plasma est absent et au moins une deuxième valeur différente de la première valeur lorsque le plasma est présent ; et à corréler la valeur d'impédance mesurée à un attribut du traitement, si ladite valeur d'impédance mesurée ne se situe pas dans une plage de valeur d'impédance prédéfinie.
PCT/US2005/034226 2004-09-27 2005-09-23 Procede et appareil de controle d'un traitement dans un systeme de traitement plasma par mesure d'impedance WO2006036820A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007533668A JP2008515197A (ja) 2004-09-27 2005-09-23 インピーダンス測定によるプラズマ加工システムの加工工程モニター方法並びに装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/951,548 2004-09-27
US10/951,548 US20060065631A1 (en) 2004-09-27 2004-09-27 Methods and apparatus for monitoring a process in a plasma processing system by measuring impedance

Publications (2)

Publication Number Publication Date
WO2006036820A2 WO2006036820A2 (fr) 2006-04-06
WO2006036820A3 true WO2006036820A3 (fr) 2007-07-05

Family

ID=36097837

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/034226 WO2006036820A2 (fr) 2004-09-27 2005-09-23 Procede et appareil de controle d'un traitement dans un systeme de traitement plasma par mesure d'impedance

Country Status (6)

Country Link
US (1) US20060065631A1 (fr)
JP (1) JP2008515197A (fr)
KR (1) KR20070057983A (fr)
CN (1) CN101088148A (fr)
TW (1) TW200624599A (fr)
WO (1) WO2006036820A2 (fr)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4416569B2 (ja) * 2004-05-24 2010-02-17 キヤノン株式会社 堆積膜形成方法および堆積膜形成装置
US7323116B2 (en) * 2004-09-27 2008-01-29 Lam Research Corporation Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage
JP2007081302A (ja) * 2005-09-16 2007-03-29 Toshiba Corp 管理システム、管理方法及び電子装置の製造方法
US20080084650A1 (en) 2006-10-04 2008-04-10 Applied Materials, Inc. Apparatus and method for substrate clamping in a plasma chamber
JP4623111B2 (ja) 2008-03-13 2011-02-02 ソニー株式会社 画像処理装置、画像処理方法及びプログラム
US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
US20110297088A1 (en) * 2010-06-04 2011-12-08 Texas Instruments Incorporated Thin edge carrier ring
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9530620B2 (en) * 2013-03-15 2016-12-27 Lam Research Corporation Dual control modes
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9408288B2 (en) 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
US9043525B2 (en) 2012-12-14 2015-05-26 Lam Research Corporation Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool
US9155182B2 (en) 2013-01-11 2015-10-06 Lam Research Corporation Tuning a parameter associated with plasma impedance
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
US9107284B2 (en) 2013-03-13 2015-08-11 Lam Research Corporation Chamber matching using voltage control mode
US9119283B2 (en) 2013-03-14 2015-08-25 Lam Research Corporation Chamber matching for power control mode
US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US10950421B2 (en) * 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
KR102043994B1 (ko) 2017-04-14 2019-11-12 광운대학교 산학협력단 플라즈마 진단 시스템 및 방법
US10920320B2 (en) * 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US20190242838A1 (en) * 2018-02-07 2019-08-08 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Non-Invasive Method for Probing Plasma Impedance
CN115696709B (zh) * 2022-12-28 2023-03-21 江苏奥文仪器科技有限公司 监测射频辉光放电光谱仪放电室内等离子体稳定性的装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5414324A (en) * 1993-05-28 1995-05-09 The University Of Tennessee Research Corporation One atmosphere, uniform glow discharge plasma
US6197116B1 (en) * 1996-08-29 2001-03-06 Fujitsu Limited Plasma processing system
US20010025691A1 (en) * 2000-03-24 2001-10-04 Seiichiro Kanno Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe
US20030178140A1 (en) * 2002-03-25 2003-09-25 Mitsubishi Denki Kabushiki Kaisha Plasma processing apparatus capable of evaluating process performance
US20040027209A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Fixed matching network with increased match range capabilities

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5863376A (en) * 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US6063234A (en) * 1997-09-10 2000-05-16 Lam Research Corporation Temperature sensing system for use in a radio frequency environment
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
US6302966B1 (en) * 1999-11-15 2001-10-16 Lam Research Corporation Temperature control system for plasma processing apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5414324A (en) * 1993-05-28 1995-05-09 The University Of Tennessee Research Corporation One atmosphere, uniform glow discharge plasma
US6197116B1 (en) * 1996-08-29 2001-03-06 Fujitsu Limited Plasma processing system
US20010025691A1 (en) * 2000-03-24 2001-10-04 Seiichiro Kanno Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe
US20030178140A1 (en) * 2002-03-25 2003-09-25 Mitsubishi Denki Kabushiki Kaisha Plasma processing apparatus capable of evaluating process performance
US20040027209A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Fixed matching network with increased match range capabilities

Also Published As

Publication number Publication date
KR20070057983A (ko) 2007-06-07
US20060065631A1 (en) 2006-03-30
JP2008515197A (ja) 2008-05-08
TW200624599A (en) 2006-07-16
WO2006036820A2 (fr) 2006-04-06
CN101088148A (zh) 2007-12-12

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