WO2006025034A3 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
WO2006025034A3
WO2006025034A3 PCT/IB2005/052872 IB2005052872W WO2006025034A3 WO 2006025034 A3 WO2006025034 A3 WO 2006025034A3 IB 2005052872 W IB2005052872 W IB 2005052872W WO 2006025034 A3 WO2006025034 A3 WO 2006025034A3
Authority
WO
WIPO (PCT)
Prior art keywords
diode
component
semiconductor
electrodes
contact therewith
Prior art date
Application number
PCT/IB2005/052872
Other languages
French (fr)
Other versions
WO2006025034A2 (en
Inventor
Steven T Peake
Original Assignee
Koninkl Philips Electronics Nv
Steven T Peake
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Steven T Peake filed Critical Koninkl Philips Electronics Nv
Publication of WO2006025034A2 publication Critical patent/WO2006025034A2/en
Publication of WO2006025034A3 publication Critical patent/WO2006025034A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Abstract

A semiconductor device comprises a unipolar semiconductor component and a PiN diode. The semiconductor body of the device comprises a component body of the component having at least two main electrodes (21, 24) in contact therewith, and a diode body of the PiN diode, the diode body having two electrodes (23, 24) in contact therewith. One of the diode electrodes (24) is connected to a main electrode of the component body, and a bias potential is applicable to the other diode electrode (23) such that it is forward biased when the component is in its on state. The PiN diode serves to improve the on-state characteristics of the semiconductor component. The semiconductor component may be a MOS device, or a Schottky diode, for example.
PCT/IB2005/052872 2004-09-03 2005-09-01 Semiconductor device WO2006025034A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0419556.6 2004-09-03
GBGB0419556.6A GB0419556D0 (en) 2004-09-03 2004-09-03 Semiconductor device

Publications (2)

Publication Number Publication Date
WO2006025034A2 WO2006025034A2 (en) 2006-03-09
WO2006025034A3 true WO2006025034A3 (en) 2006-11-16

Family

ID=33155963

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2005/052872 WO2006025034A2 (en) 2004-09-03 2005-09-01 Semiconductor device

Country Status (2)

Country Link
GB (1) GB0419556D0 (en)
WO (1) WO2006025034A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101512738B (en) 2006-09-22 2013-03-27 飞思卡尔半导体公司 Semiconductor device and method of forming the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0057256A2 (en) * 1981-02-02 1982-08-11 Siemens Aktiengesellschaft Vertical MIS field effect transistor with low forward resistance
EP0563952A1 (en) * 1992-04-03 1993-10-06 Hitachi, Ltd. Composite controlled semiconductor device and power conversion device using the same
US5350934A (en) * 1992-03-05 1994-09-27 Kabushiki Kaisha Toshiba Conductivity modulation type insulated gate field effect transistor
US20030178676A1 (en) * 2002-03-19 2003-09-25 Ralf Henninger Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0057256A2 (en) * 1981-02-02 1982-08-11 Siemens Aktiengesellschaft Vertical MIS field effect transistor with low forward resistance
US5350934A (en) * 1992-03-05 1994-09-27 Kabushiki Kaisha Toshiba Conductivity modulation type insulated gate field effect transistor
EP0563952A1 (en) * 1992-04-03 1993-10-06 Hitachi, Ltd. Composite controlled semiconductor device and power conversion device using the same
US20030178676A1 (en) * 2002-03-19 2003-09-25 Ralf Henninger Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SAWANT S ET AL: "4KV MERGED PIN SCHOTTKY (MPS) RECTIFIERS", PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS (ISPSD '98), KYOTO, JP, 3 June 1998 (1998-06-03) - 6 June 1998 (1998-06-06), IEEE, NEW YORK, NY, USA, pages 297 - 300, XP000801084, ISBN: 0-7803-4752-8 *

Also Published As

Publication number Publication date
WO2006025034A2 (en) 2006-03-09
GB0419556D0 (en) 2004-10-06

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