WO2006022498A1 - Nitride semicondctor light emitting device and fabrication method thereof - Google Patents

Nitride semicondctor light emitting device and fabrication method thereof Download PDF

Info

Publication number
WO2006022498A1
WO2006022498A1 PCT/KR2005/002757 KR2005002757W WO2006022498A1 WO 2006022498 A1 WO2006022498 A1 WO 2006022498A1 KR 2005002757 W KR2005002757 W KR 2005002757W WO 2006022498 A1 WO2006022498 A1 WO 2006022498A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
nitride semiconductor
emitting device
semiconductor light
alinn
Prior art date
Application number
PCT/KR2005/002757
Other languages
French (fr)
Inventor
Suk Hun Lee
Original Assignee
Lg Innotek Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR20040067495A external-priority patent/KR100611003B1/en
Priority claimed from KR20040067497A external-priority patent/KR100609583B1/en
Application filed by Lg Innotek Co., Ltd filed Critical Lg Innotek Co., Ltd
Priority to US11/661,186 priority Critical patent/US8053794B2/en
Priority to EP20050781229 priority patent/EP1794813B1/en
Priority to JP2007529680A priority patent/JP2008511154A/en
Publication of WO2006022498A1 publication Critical patent/WO2006022498A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region

Definitions

  • the present invention relates to a nitride semiconductor light-emitting device and fabrication method thereof.
  • GaN-based nitride semiconductors find its application fields in electronic devices (i.e., high-speed switching and high output devices) such as optical devices of blue/green LED (Light Emitting Diode), MESFET (Metal Semiconductor Field Effect Transistor) and HEMT (High Electron Mobility Transistors).
  • electronic devices i.e., high-speed switching and high output devices
  • optical devices of blue/green LED Light Emitting Diode
  • MESFET Metal Semiconductor Field Effect Transistor
  • HEMT High Electron Mobility Transistors
  • the GaN based nitride semiconductor light emitting device is grown on a sapphire substrate or a SiC substrate. Then, an AlYGaI-YN polycrystalline thin film is grown on the sapphire substrate or the SiC substrate as a buffer layer at a low growth temperature. Then, an undoped GaN layer, a Si-doped n-GaN layer, or a mixture of the above two structures is grown on the buffer layer at a high temperature to form an n- GaN layer. Also, a Mg-doped p-GaN layer is formed at upper layer to manufacture a nitride semiconductor light emitting device. An emission layer (a multiple quantum well structure activation layer) is interposed between the n-GaN layer and the p-GaN layer.
  • a related art p-GaN layer is formed by doping Mg atoms while growing crystal. It is required that Mg atoms implanted as a doping source during crystalline growth be substituted by Ga location and thus serve as a p-GaN layer.
  • the Mg atoms are combined with a hydrogen gas dissolved in a carrier gas and a source to form a Mg-H complex in a GaN crystalline layer, resulting in a high resistant material of about 1OD.
  • the amount of carriers contributing to light emission in the activation process is about 10 17 /D, which is very lower than the Mg atomic concentration of 10 /D or higher. Accordingly, there is a dis ⁇ advantage in that it is very difficult to form a resistive contact.
  • the Mg atoms remaining within the p-GaN nitride semiconductor without being activated as carriers serve as the center at which light emitted from the interface with the active layer is trapped, abruptly decreasing the optical output.
  • a method in which contact resistance is lowered to increase current injection efficiency using a very thin transparent resistive metal material has been employed.
  • the thin transparent resistive metal used to decrease the contact resistance is about 75 to 80% in optical transmittance.
  • the remaining optical transmittance serves as loss. More particularly, there is a limit to reducing an operating voltage due to high contact resistance. Disclosure of Invention Technical Problem
  • An object of the present invention is to provide a nitride semiconductor light- emitting device and fabrication method thereof, wherein the crystallinity of an active layer constituting the nitride semiconductor light-emitting device can be improved and the optical output and reliability can be improved.
  • a first embodiment of a nitride semi ⁇ conductor light-emitting device comprises a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer having AlIn, which is formed on the second nitride semi ⁇ conductor layer.
  • a second embodiment of a nitride semiconductor light-emitting device comprises a substrate; a buffer layer forming on the substrate; a first GaN based layer into which In is doped, the first GaN based layer being formed on the buffer layer; a second GaN based layer into which Si and In are doped, the second GaN based layer being formed on the first GaN based layer; an InxGal-xN layer formed on the second GaN based layer; an active layer formed on the InxGal-xN layer; a p-GaN based layer formed on the active layer; and an n- AlInN layer or a p- AlInN layer formed on the p- GaN based layer.
  • a third embodiment of a nitride semiconductor light-emitting device comprises a first nitride semiconductor layer; an n- AlInN cladding layer formed on the first nitride semiconductor layer; an n-InGaN layer formed on the n-AlInN cladding layer; an active layer formed on the n-InGaN layer; a p-InGaN layer formed on the active layer; a p- AlInN cladding layer formed on the p-InGaN layer; and a second nitride semiconductor layer formed on the p- AlInN cladding layer.
  • a fourth embodiment of a nitride semiconductor light-emitting device comprises a first nitride semiconductor layer; an n- AlInN cladding layer formed on the first nitride semiconductor layer; an active layer formed on the n- AlInN cladding layer; a p- AlInN cladding layer formed on the active layer; and a second nitride semi ⁇ conductor layer formed on the p- AlInN cladding layer.
  • a fifth embodiment of a nitride semiconductor light-emitting device comprises a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer; a p-InGaN layer formed on the active layer; a p- AlInN cladding layer formed on the p-InGaN layer; and a second nitride semiconductor layer formed on the p-AHnN cladding layer.
  • a first embodiment of a method of fabricating a nitride semiconductor light-emitting device comprises: forming a buffer layer on a substrate; forming a GaN based layer on the buffer layer; forming a first electrode layer on the GaN based layer; forming an InxGal-xN layer on the first electrode layer; forming an active layer on the InxGal-xN layer; forming a p-GaN based layer on the active layer; and forming an n- AlInN layer or a p- AlInN layer on the p-GaN based layer.
  • a second embodiment of a method of fabricating a nitride semiconductor light-emitting device comprises: forming a buffer layer on a substrate; forming an In- doped GaN based layer into which indium (In) is doped on the buffer layer; forming a first electrode layer on the In-doped GaN based layer; forming an n- AlInN cladding layer on the first electrode layer; forming an active layer on the n- AlInN cladding layer; forming a p- AlInN cladding layer on the active layer; forming a p-GaN based layer on the p- AlInN cladding layer; and forming a second electrode layer on the p- GaN based layer.
  • a third embodiment of a method of fabricating a nitride semiconductor light-emitting device comprises: forming a buffer layer on a substrate; forming an In- doped GaN based layer into which indium (In) is doped on the buffer layer; forming a first electrode layer on the In-doped GaN based layer; forming an active layer that emits light on the first electrode layer; forming a p-InGaN layer on the active layer; forming a p-AlInN cladding layer on the p-InGaN layer; forming a p-GaN based layer on the p-AHnN cladding layer; and forming a second electrode layer on the p-GaN based layer.
  • the crystallinity of an active layer constituting a nitride semiconductor light-emitting device can be improved and the optical output and reliability can be improved.
  • FlG. 1 is a view schematically showing the stack structure of a nitride semi ⁇ conductor light-emitting device according to a first embodiment of the present invention.
  • FlG. 2 is a view schematically showing the stack structure of a nitride semi ⁇ conductor light-emitting device according to a second embodiment of the present invention.
  • FlG. 3 is a view schematically showing the stack structure of a nitride semi ⁇ conductor light-emitting device according to a third embodiment of the present invention.
  • FlG. 4 is a view schematically showing the stack structure of a nitride semi ⁇ conductor light-emitting device according to a fourth embodiment of the present invention.
  • FlG. 5 is a view schematically showing the stack structure of a nitride semi ⁇ conductor light-emitting device according to a fifth embodiment of the present invention.
  • FlG. 6 is a view schematically showing the stack structure of a nitride semi ⁇ conductor light-emitting device according to a sixth embodiment of the present invention.
  • FlG. 7 is a view schematically showing the stack structure of a nitride semi ⁇ conductor light-emitting device according to a seventh embodiment of the present invention.
  • FlG. 8 is a view schematically showing the stack structure of a nitride semi ⁇ conductor light-emitting device according to an eighth embodiment of the present invention.
  • FlG. 9 is a view schematically showing the stack structure of a nitride semi ⁇ conductor light-emitting device according to a ninth embodiment of the present invention.
  • FlG. 10 is a view schematically showing the stack structure of a nitride semi ⁇ conductor light-emitting device according to a tenth embodiment of the present invention.
  • FlG. 11 is a view schematically showing the stack structure of a nitride semi ⁇ conductor light-emitting device according to an eleventh embodiment of the present invention. Mode for the Invention
  • FlG. 1 is a view schematically showing the stack structure of a nitride semi ⁇ conductor light-emitting device according to a first embodiment of the present invention.
  • a nitride semiconductor light-emitting device 1 includes a buffer layer 4 formed on a substrate 2, as shown in FlG. 1.
  • the buffer layer 4 can have one of an AlInN/GaN stack structure, an InGaN/GaN supper lattice structure, an InxGal-xN/GaN stack structure, an AIxInYGa l-(x+ ⁇ )N/InxGal-x N/GaN stack structure (O ⁇ x ⁇ l, O ⁇ y ⁇ l, x+y ⁇ l).
  • An In-doped GaN layer 6 into which indium is doped is then formed on the buffer layer 4.
  • a n-type first electrode layer is formed on the In-doped GaN layer 6.
  • a Si-In co-doped GaN layer 8 into which silicon and indium are doped at the same time can be adopted as the n-type first electrode layer.
  • An InxGal-xN layer 10 having a low content of indium is also formed on the Si-In co-doped GaN layer 8.
  • An active layer 12 for emitting light is formed on the InxGal-x N layer 10.
  • the active layer 12 can have a single quantum well structure or a multi quantum well structure formed as an InGaN well layer/InGaN barrier layer. An example of the stack structure will be described in more detail with reference to FlG. 3 later on.
  • a p-GaN layer 14 is then formed on the active layer 12. At this time, the p-GaN layer 14 may be formed so that it may be doped with magnesium.
  • a n-type second electrode layer is then formed on the p-GaN layer 14.
  • an n- AlInN layer 16 may be adopted as the n-type second electrode layer.
  • the n- AlInN layer 16 may be formed so that it may be doped with silicon.
  • the Si-In co-doped GaN layer 8 i.e., the first electrode layer
  • the n- AlInN layer 16 i.e., the second electrode layer
  • the p-GaN layer 14 is formed between the Si-In co-doped GaN layer 8 and the n- AlInN layer 16.
  • the nitride semiconductor light-emitting device according to the present invention has an n/p/n junction light- emitting device structure unlike the related art p/n junction light-emitting device.
  • the present invention can provide a scheme in which a low carrier concentration generating due to the structure of the related art p/n junction light-emitting device and low Mg doping efficiency of the p-GaN nitride semi ⁇ conductor itself, and a current crowding problem depending on an increase of contact resistance accordingly can be overcome.
  • the transparent electrode for applying a bias voltage to an n- AlInN layer may include a transparent resistive material or transparent conductive oxide, which can maximize current spreading so as to maximize the optical output and has a good optical transmittance.
  • ITO, ZnO, RuOx, IrOx, NiO, or Au alloy metal including Ni may be used as such a material. It is thus possible to implement the optical output of 50% or higher compared to the related art p/n junction through the use of the transparent electrode.
  • the present invention can lower an operating voltage owing to low contact resistance and can improve the reliability of devices accordingly. More par ⁇ ticularly, a high output light-emitting device using a flip chip method necessarily requires a low operating voltage when being applied with the current of a large area 30OmA or higher. If contact resistance of the light-emitting device itself is relatively high so as to apply the same current, the operating voltage is increased. Accordingly, heat of 100°C or higher is generated in the light-emitting device itself. Heat generated internally has a decisive influence on the reliability.
  • the device when the same current is applied due to low contact resistance, the device can be driven a relatively low operating voltage and heat generating within the device is low. Therefore, a light-emitting device with high reliability can be provided.
  • FIG. 2 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to a second embodiment of the present invention.
  • the stack structure of the nitride semiconductor light-emitting device 21 according to a second embodiment of the present invention shows a case where a super grading n-InxGal-xN layer 24 whose energy bandgap is controlled by sequentially changing the indium composition is further formed on the n- AlInN layer 16, when compared with the nitride semiconductor light-emitting device 1 shown in FIG. 1.
  • the super grading n-InxGal-xN layer 24 can be formed to have the composition of 0 ⁇ x ⁇ 0.2.
  • the super grading n-InxGal-xN layer 24 may be doped with silicon.
  • a nitride semiconductor light-emitting device 21 having this stack structure can be considered as an n/n/p/n junction light-emitting device. Further, in the nitride semi ⁇ conductor light-emitting device 21 having this stack structure, a transparent electrode for applying a bias voltage can be formed in the super grading n-InxGal-xN layer 24.
  • an InGaN/AlInGaN supper lattice structure layer or an InGaN/InGaN supper lattice structure layer can be formed on the n- AlInN layer 16 instead of the super grading n-InxGal-xN layer 24.
  • the InGaN/AlInGaN supper lattice structure layer or the InGaN/InGaN supper lattice structure layer may be doped with silicon.
  • FIG. 3 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to a third embodiment of the present invention.
  • the layers (the same reference numerals given), which have been described with reference to FlG. 1, of the stack structure shown in FlG. 3, will not be described.
  • a low-mole InxGal-xN layer 10 having a low content of indium that controls the strain of the active layer is formed in order to increase internal quantum efficiency, as shown in FlG. 3. Furthermore, in order to improve the optical output and reverse leakage current due to indium fluctuation, SiNx cluster layers 33, 35, which are controlled in atomic scale form, are further formed on top and bottom surfaces of the low-mole InxGal-xN layer 10, respectively.
  • the active layer that emits light can have a single quantum well structure or a multiple quantum well structure formed of an InYGaI-YN well layer/Inz Gal-zN barrier layer.
  • FlG. 3 shows an example of the light-emitting device having a multiple quantum well structure in which SiNx cluster layers 39, 45 are further provided between InYGa 1-YN well layers 37, 43 and InzGal-zN barrier layers 41, 47 as the active layers.
  • the composition ratio can be controlled to InYGaI-YN well layer (0 ⁇ y ⁇ 0.35)/SiNx cluster layer/InzGal-zN barrier layer(0 ⁇ z ⁇ 0.1).
  • the content of indium doped into the InYGaI-YN well layers 37, 43, the content of indium doped into the InzGal-zN barrier layers 41, 47, and the content of indium doped into the low- mole InxGal-xN layer 10 can be controlled to have the values of 0 ⁇ x ⁇ 0.1, 0 ⁇ y ⁇ 0.35 and 0 ⁇ z ⁇ 0.1, respectively.
  • a GaN cap layer that controls the amount of indium fluctuation in the InYGaI-YN well layer can be further formed between the InYGaI-YN well layer and the InzGal-zN barrier layer, which form the active layers.
  • the contents of indium of the well layer and the barrier layer that emit light can be constructed using In ⁇ Gal- ⁇ N(0 ⁇ y ⁇ 0.35)/GaN cap/InzGal-zN(0 ⁇ z ⁇ 0.1).
  • FlG. 4 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to a fourth embodiment of the present invention.
  • the layers (the same reference numerals given), which have been described with reference to FlG. 1, of the stack structure shown in FlG. 4, will not be described.
  • a nitride semiconductor light-emitting device 51 according to a fourth embodiment of the present invention further includes a super grading n-InxGal-xN layer 52 whose energy bandgap is controlled by sequentially changing the indium composition is further formed on the p-GaN layer 14. Furthermore, FlG. 4 shows a case where an n- AlInN layer 54 is further formed on the super grading n-InxGal-xN layer 52.
  • the nitride semiconductor light-emitting device 51 having this stack structure can be interpreted as an n/n/p/n junction light-emitting device. Further, in the nitride semi ⁇ conductor light-emitting device 51 having this stack structure, a transparent electrode for applying a bias voltage may be formed in the n- AlInN layer 54.
  • FlG. 4 shows a case where the super grading n-InxGal-xN layer 52 is formed on the p-GaN layer 15
  • an InGaN/AlInGaN supper lattice structure layer or an InGaN/InGaN supper lattice structure may be formed on the p-GaN layer 15 instead of the super grading n-InxGal-xN layer 52.
  • FlG. 5 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to a fifth embodiment of the present invention.
  • the layers (the same reference numerals given), which have been described with reference to FlG. 1, of the stack structure shown in FlG. 5, will not be described.
  • a nitride semiconductor light-emitting device 61 according to a fifth embodiment of the present invention is characterized in that a p- AlInN layer 66 is formed on the p- GaN layer 16.
  • the p- AlInN layer 66 may be doped with magnesium.
  • the nitride semiconductor light-emitting device 61 having this stack structure can be interpreted as a p/n junction light-emitting device, but can provide light-emitting efficiency similar to other embodiments by way of a physical characteristic of the p- AlInN layer 66. Further, in the nitride semiconductor light-emitting device 61 having this stack structure, a transparent electrode for applying a bias voltage may be formed in the p- AlInN layer 66.
  • FlG. 6 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to a sixth embodiment of the present invention.
  • the stack structure of a nitride semiconductor light-emitting device 71 shows a case where a super grading n-Inx Gal-xN layer 74 whose energy bandgap is controlled by sequentially changing the indium composition is further formed on the p- AlInN layer 66, when compared with the nitride semiconductor light-emitting device 61 shown in FlG. 5.
  • the super grading n-InxGal-xN layer 74 may be formed to have the composition of 0 ⁇ x ⁇ 0.2.
  • the super grading n-InxGal-xN layer 74 may be doped with silicon.
  • a nitride semiconductor light-emitting device 71 having this stack structure can be considered as an n/p/p/n junction light-emitting device. Further, in the nitride semi ⁇ conductor light-emitting device 71 having this stack structure, a transparent electrode for applying a bias voltage may be formed in the super grading n-InxGal-xN layer 74.
  • an InGaN/AlInGaN supper lattice structure layer or an InGaNTInGaN supper lattice structure layer may be formed on the n- AlInN layer 66 instead of the super grading n-InxGal-xN layer 74.
  • the InGaN/AlInGaN supper lattice structure layer or the InGaN/InGaN supper lattice structure layer may be doped with silicon.
  • FIG. 7 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to a seventh embodiment of the present invention.
  • a nitride semiconductor light-emitting device 81 according to the present invention includes a buffer layer 84 formed on the substrate 82, as shown in FIG. 7.
  • the buffer layer 84 may have an AlInN/GaN stack structure, an InGaN/GaN supper lattice structure, an InxGal-xN/GaN stack structure or the stack structure of AIxInYGa l-(x+ ⁇ )N/InxGal-xN/GaN.
  • an In-doped GaN layer 86 into which indium is doped is formed on the buffer layer 84.
  • a n-type first electrode layer is formed on the In-doped GaN layer 86.
  • a Si-In co-doped GaN layer 88 into which silicon and indium are doped at the same time can be adopted as the n-type first electrode layer.
  • an n-AlInN cladding layer 90 is formed on the Si-In co-doped GaN layer 88.
  • An n-InGaN layer 92 is formed on the n- AlInN cladding layer 90.
  • An active layer 94 that emits light is also formed on the n-InGaN layer 92.
  • the active layer 94 may have a single quantum well structure or a multiple quantum well structure. An example of the stack structure constituting the active layer 94 will be described in more detail later on with reference to FIG. 9.
  • the active layer 94 in accordance with the present invention there is an advantage in that sufficient optical efficiency can be accomplished even the active layer 94 has a single quantum well structure.
  • a p-InGaN layer 96 is formed on the active layer 94.
  • a p- AlInN cladding layer 98 is formed on the p-InGaN layer 96.
  • a p-GaN layer 100 is formed on the p- AlInN cladding layer 98.
  • the p-GaN layer 100 may be doped with magnesium (Mg).
  • an n-type second electrode layer is formed on the p-GaN layer 100.
  • a super grading n-InxGal-xN layer 102 whose energy bandgap is controlled by sequentially changing the indium composition can be adopted as the n-type second electrode layer.
  • the composition of the super grading n-InxGal-xN layer 102 can be controlled to 0 ⁇ x ⁇ 0.2.
  • the super grading n-InxGal-xN layer 102 may doped with silicon.
  • both the first electrode layer 88 and the second electrode layer 102 are formed using an n-type nitride semiconductor and the p-GaN layer 100 is formed therebetween. Therefore, in view of the above structure, it can be considered that the nitride semiconductor light-emitting device of the present invention has an npn junction light-emitting device structure unlike the related art pn junction light-emitting device.
  • the n-type nitride semiconductor e.g., the super grading n-InxGal-x
  • N layer 102 which is used as the second electrode layer, has resistance lower than that of an existing p-GaN contact layer.
  • contact resistance can be reduced and current implantation can be maximized.
  • a transparent electrode for applying a bias voltage to the second electrode layer can include a transparent resistive material or transparent conductive oxide, which can maximize current dispersing so as to maximize the optical output and have a good optical transmittance.
  • ITO, ZnO, RuOx, IrOx, NiO, or Au alloy metal including Ni may be used as such a material.
  • the second electrode layer may have an InGaN/AlInGaN supper lattice structure layer or an InGaN/InGaN supper lattice structure layer. Further, the InGaN/AlInGaN supper lattice structure layer or the InGaN/InGaN supper lattice structure layer may be doped with silicon.
  • an n- AlInN layer may be used as the second electrode layer.
  • the n- AlInN cladding layer 90 and the p- AlInN cladding layer 98 are inserted lower/upper side to the active layers 94, re ⁇ spectively. Therefore, internal quantum efficiency can be improved by prohibiting carrier implantation efficiency within the active layer 94 and current overflow.
  • FIG. 8 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to an eighth embodiment of the present invention.
  • the layers (the same reference numerals given), which have been described with reference to FIG. 7, of the stack structure shown in FIG. 8, will not be described.
  • the nitride semiconductor light-emitting device 111 according to an eighth embodiment of the present invention is different from the nitride semiconductor light- emitting device 81 shown in FIG. 7 according to the seventh embodiment in that an In xGal-xN layer 114 having a low content of indium.
  • the InxGal-xN layer 114 having a low content of indium is further formed between the n-InGaN layer 92 and the active layer 94. The reason is that in order to increase internal quantum efficiency, the InxGal-xN layer 114 having a low content of indium is further formed so that it can control the strain of the active layer 94.
  • FlG. 9 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to an ninth embodiment of the present invention.
  • the layers (the same reference numerals given), which have been described with reference to FlG. 7, of the stack structure shown in FlG. 9, will not be described.
  • the nitride semiconductor light-emitting device 121 includes a low-mole InxGal-xN layer 122 having a low content of indium, which controls the strain of the active layer, in order to increase internal quantum efficiency, as shown in FlG. 9. Furthermore, in order to improve the optical output and reverse leakage current due to indium fluctuation, SiNx cluster layers 132, 134, which are controlled in atomic scale form, are further formed on top and bottom surfaces of the low-mole InxGal-xN Iayerl22.
  • the active layer that emits light may have a single quantum well structure or a multiple quantum well structure formed using an InYGaI-YN well layer/ InzGal-zN barrier layer.
  • FlG. 9 shows an example of the light-emitting device having a multiple quantum well structure in which SiNx cluster layers 136, 138 are further provided between InY GaI-YN well layers 124, 128 and InzGal-zN barrier layers 126, 130 as the active layers.
  • the composition ratio may be controled to InYGaI-YN well layer(0 ⁇ y ⁇ 0.35)/SiNx cluster layer/InzGal-zN barrier layer(0 ⁇ z ⁇ 0.1).
  • the content of indium doped into the InYGaI-YN well layers 124, 128, the content of indium doped into the InzGal-zN barrier layers 126, 130 and the content of indium doped into the low-mole InxGal-xN layer 122 may be controlled to have 0 ⁇ x ⁇ 0.1, 0 ⁇ y ⁇ 0.35 and 0 ⁇ z ⁇ 0.1, respectively.
  • a GaN cap layer that controls the amount of indium fluctuation in the InYGaI-YN well layer may be further formed between the InYGaI-YN well layer and the InzGal-zN barrier layer, which form the active layers.
  • the content of indium of each of the well layer and the barrier layer that emit light may be constructed using In ⁇ Gal- ⁇ N(0 ⁇ y ⁇ 0.35)/GaN cap/ InzGal-zN(0 ⁇ z ⁇ 0.1).
  • a SiNx cluster layer 140 is grown to a thickness of atomic scale, so that internal diffusion of the active layer within Mg atoms of the p-GaN layer 100 can be prohibited.
  • FIG. 10 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to a tenth embodiment of the present invention.
  • the layers (the same reference numerals given), which have been described with reference to FIG. 7, of the stack structure shown in FIG. 10, will not be described.
  • a nitride semiconductor light-emitting device 141 includes an active layer 94 formed on an n- AlInN cladding layer 90 and a p-AlInN cladding layer 98 formed on the active layer 94.
  • the nitride semiconductor light-emitting device 141 according to a tenth embodiment of the present invention has a modified stack structure in which the n- InGaN layer 92 and the p-InGaN layer 96 are not formed when compared with the nitride semiconductor light-emitting device 81 according to a seventh embodiment shown in FIG. 7.
  • FIG. 11 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to an eleventh embodiment of the present invention.
  • the layers (the same reference numerals given), which have been described with reference to FIG. 7, of the stack structure shown in FIG. 11, will not be described.
  • a nitride semiconductor light-emitting device 151 includes an active layer 94 formed on a Si-In co- doped GaN layer 88 (i.e., a first electrode layer), and a p-InGaN layer 96 and a p- AlInN cladding layer 98 both of which are formed on the active layer 94.
  • the nitride semiconductor light-emitting device 151 according to a eleventh embodiment of the present invention has a modified stack structure in which the n- AlInN cladding layer 90 and the n-InGaN layer 92 are not formed when compared with the nitride semiconductor light-emitting device 81 according to a seventh embodiment shown in FIG. 7.
  • a nitride semiconductor light-emitting device and fabricating method thereof in accordance with the present invention there are advantages in that the crys- tallinity of an active layer constituting a nitride semiconductor light-emitting device can be improved and the optical output and reliability can be improved.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

A nitride semiconductor light-emitting device according to the present invention comprises a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer having AlIn, which is formed on the second nitride semiconductor layer. And a nitride semiconductor light-emitting device comprises a first nitride semiconductor layer; an n- AlInN cladding layer formed on the first nitride semiconductor layer; an n-InGaN layer formed on the n- AlInN cladding layer; an active layer formed on the n-InGaN layer; a p-InGaN layer formed on the active layer; a p- AlInN cladding layer formed on the p-InGaN layer; and a second nitride semiconductor layer formed on the p- AlInN cladding layer.

Description

Description
NITRIDE SEMICONDCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF
Technical Field
[1] The present invention relates to a nitride semiconductor light-emitting device and fabrication method thereof. Background Art
[2] Generally, GaN-based nitride semiconductors find its application fields in electronic devices (i.e., high-speed switching and high output devices) such as optical devices of blue/green LED (Light Emitting Diode), MESFET (Metal Semiconductor Field Effect Transistor) and HEMT (High Electron Mobility Transistors).
[3] The GaN based nitride semiconductor light emitting device is grown on a sapphire substrate or a SiC substrate. Then, an AlYGaI-YN polycrystalline thin film is grown on the sapphire substrate or the SiC substrate as a buffer layer at a low growth temperature. Then, an undoped GaN layer, a Si-doped n-GaN layer, or a mixture of the above two structures is grown on the buffer layer at a high temperature to form an n- GaN layer. Also, a Mg-doped p-GaN layer is formed at upper layer to manufacture a nitride semiconductor light emitting device. An emission layer (a multiple quantum well structure activation layer) is interposed between the n-GaN layer and the p-GaN layer.
[4] A related art p-GaN layer is formed by doping Mg atoms while growing crystal. It is required that Mg atoms implanted as a doping source during crystalline growth be substituted by Ga location and thus serve as a p-GaN layer. The Mg atoms are combined with a hydrogen gas dissolved in a carrier gas and a source to form a Mg-H complex in a GaN crystalline layer, resulting in a high resistant material of about 1OD.
[5] Accordingly, after a pn junction light-emitting device is formed, there is an need for a subsequent activation process for cutting the Mg-H complex and substituting the Mg atoms at the Ga location. However, in the light-emitting device, the amount of carriers contributing to light emission in the activation process is about 1017/D, which is very lower than the Mg atomic concentration of 10 /D or higher. Accordingly, there is a dis¬ advantage in that it is very difficult to form a resistive contact.
[6] Furthermore, the Mg atoms remaining within the p-GaN nitride semiconductor without being activated as carriers serve as the center at which light emitted from the interface with the active layer is trapped, abruptly decreasing the optical output. In order to improve this problem, a method in which contact resistance is lowered to increase current injection efficiency using a very thin transparent resistive metal material has been employed.
[7] However, the thin transparent resistive metal used to decrease the contact resistance is about 75 to 80% in optical transmittance. The remaining optical transmittance serves as loss. More particularly, there is a limit to reducing an operating voltage due to high contact resistance. Disclosure of Invention Technical Problem
[8] An object of the present invention is to provide a nitride semiconductor light- emitting device and fabrication method thereof, wherein the crystallinity of an active layer constituting the nitride semiconductor light-emitting device can be improved and the optical output and reliability can be improved. Technical Solution
[9] In order to accomplish the above object, a first embodiment of a nitride semi¬ conductor light-emitting device according to the present invention comprises a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer having AlIn, which is formed on the second nitride semi¬ conductor layer.
[10] Furthermore, in order to accomplish the above object, a second embodiment of a nitride semiconductor light-emitting device according to the present invention comprises a substrate; a buffer layer forming on the substrate; a first GaN based layer into which In is doped, the first GaN based layer being formed on the buffer layer; a second GaN based layer into which Si and In are doped, the second GaN based layer being formed on the first GaN based layer; an InxGal-xN layer formed on the second GaN based layer; an active layer formed on the InxGal-xN layer; a p-GaN based layer formed on the active layer; and an n- AlInN layer or a p- AlInN layer formed on the p- GaN based layer.
[11] Furthermore, in order to accomplish the above object, a third embodiment of a nitride semiconductor light-emitting device according to the present invention comprises a first nitride semiconductor layer; an n- AlInN cladding layer formed on the first nitride semiconductor layer; an n-InGaN layer formed on the n-AlInN cladding layer; an active layer formed on the n-InGaN layer; a p-InGaN layer formed on the active layer; a p- AlInN cladding layer formed on the p-InGaN layer; and a second nitride semiconductor layer formed on the p- AlInN cladding layer.
[12] Furthermore, in order to accomplish the above object, a fourth embodiment of a nitride semiconductor light-emitting device according to the present invention comprises a first nitride semiconductor layer; an n- AlInN cladding layer formed on the first nitride semiconductor layer; an active layer formed on the n- AlInN cladding layer; a p- AlInN cladding layer formed on the active layer; and a second nitride semi¬ conductor layer formed on the p- AlInN cladding layer.
[13] Furthermore, in order to accomplish the above object, a fifth embodiment of a nitride semiconductor light-emitting device according to the present invention comprises a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer; a p-InGaN layer formed on the active layer; a p- AlInN cladding layer formed on the p-InGaN layer; and a second nitride semiconductor layer formed on the p-AHnN cladding layer.
[14] Furthermore, in order to accomplish the above object, a first embodiment of a method of fabricating a nitride semiconductor light-emitting device according to the present invention comprises: forming a buffer layer on a substrate; forming a GaN based layer on the buffer layer; forming a first electrode layer on the GaN based layer; forming an InxGal-xN layer on the first electrode layer; forming an active layer on the InxGal-xN layer; forming a p-GaN based layer on the active layer; and forming an n- AlInN layer or a p- AlInN layer on the p-GaN based layer.
[15] Furthermore, in order to accomplish the above object, a second embodiment of a method of fabricating a nitride semiconductor light-emitting device according to the present invention comprises: forming a buffer layer on a substrate; forming an In- doped GaN based layer into which indium (In) is doped on the buffer layer; forming a first electrode layer on the In-doped GaN based layer; forming an n- AlInN cladding layer on the first electrode layer; forming an active layer on the n- AlInN cladding layer; forming a p- AlInN cladding layer on the active layer; forming a p-GaN based layer on the p- AlInN cladding layer; and forming a second electrode layer on the p- GaN based layer.
[16] Furthermore, in order to accomplish the above object, a third embodiment of a method of fabricating a nitride semiconductor light-emitting device according to the present invention comprises: forming a buffer layer on a substrate; forming an In- doped GaN based layer into which indium (In) is doped on the buffer layer; forming a first electrode layer on the In-doped GaN based layer; forming an active layer that emits light on the first electrode layer; forming a p-InGaN layer on the active layer; forming a p-AlInN cladding layer on the p-InGaN layer; forming a p-GaN based layer on the p-AHnN cladding layer; and forming a second electrode layer on the p-GaN based layer.
Advantageous Effects
[17] According to the present invention, the crystallinity of an active layer constituting a nitride semiconductor light-emitting device can be improved and the optical output and reliability can be improved.
Brief Description of the Drawings
[18] FlG. 1 is a view schematically showing the stack structure of a nitride semi¬ conductor light-emitting device according to a first embodiment of the present invention.
[19] FlG. 2 is a view schematically showing the stack structure of a nitride semi¬ conductor light-emitting device according to a second embodiment of the present invention.
[20] FlG. 3 is a view schematically showing the stack structure of a nitride semi¬ conductor light-emitting device according to a third embodiment of the present invention.
[21] FlG. 4 is a view schematically showing the stack structure of a nitride semi¬ conductor light-emitting device according to a fourth embodiment of the present invention.
[22] FlG. 5 is a view schematically showing the stack structure of a nitride semi¬ conductor light-emitting device according to a fifth embodiment of the present invention.
[23] FlG. 6 is a view schematically showing the stack structure of a nitride semi¬ conductor light-emitting device according to a sixth embodiment of the present invention.
[24] FlG. 7 is a view schematically showing the stack structure of a nitride semi¬ conductor light-emitting device according to a seventh embodiment of the present invention.
[25] FlG. 8 is a view schematically showing the stack structure of a nitride semi¬ conductor light-emitting device according to an eighth embodiment of the present invention.
[26] FlG. 9 is a view schematically showing the stack structure of a nitride semi¬ conductor light-emitting device according to a ninth embodiment of the present invention.
[27] FlG. 10 is a view schematically showing the stack structure of a nitride semi¬ conductor light-emitting device according to a tenth embodiment of the present invention.
[28] FlG. 11 is a view schematically showing the stack structure of a nitride semi¬ conductor light-emitting device according to an eleventh embodiment of the present invention. Mode for the Invention
[29] The present invention will be described in detail below in connection with em- bodiments with reference to the accompanying drawings.
[30] FlG. 1 is a view schematically showing the stack structure of a nitride semi¬ conductor light-emitting device according to a first embodiment of the present invention.
[31] A nitride semiconductor light-emitting device 1 according to the present invention includes a buffer layer 4 formed on a substrate 2, as shown in FlG. 1. In this case, the buffer layer 4 can have one of an AlInN/GaN stack structure, an InGaN/GaN supper lattice structure, an InxGal-xN/GaN stack structure, an AIxInYGa l-(x+γ)N/InxGal-x N/GaN stack structure (O≤x≤l, O≤y≤l, x+y≤l).
[32] An In-doped GaN layer 6 into which indium is doped is then formed on the buffer layer 4. A n-type first electrode layer is formed on the In-doped GaN layer 6. In this case, a Si-In co-doped GaN layer 8 into which silicon and indium are doped at the same time can be adopted as the n-type first electrode layer.
[33] An InxGal-xN layer 10 having a low content of indium is also formed on the Si-In co-doped GaN layer 8. An active layer 12 for emitting light is formed on the InxGal-x N layer 10. The active layer 12 can have a single quantum well structure or a multi quantum well structure formed as an InGaN well layer/InGaN barrier layer. An example of the stack structure will be described in more detail with reference to FlG. 3 later on.
[34] A p-GaN layer 14 is then formed on the active layer 12. At this time, the p-GaN layer 14 may be formed so that it may be doped with magnesium.
[35] A n-type second electrode layer is then formed on the p-GaN layer 14. In this case, an n- AlInN layer 16 may be adopted as the n-type second electrode layer. At this time, the n- AlInN layer 16 may be formed so that it may be doped with silicon.
[36] In the nitride semiconductor light-emitting device according to the present invention, the Si-In co-doped GaN layer 8 (i.e., the first electrode layer) and the n- AlInN layer 16 (i.e., the second electrode layer) are all formed using n-type nitride and the p-GaN layer 14 is formed between the Si-In co-doped GaN layer 8 and the n- AlInN layer 16. In view of the above, it can be considered that the nitride semiconductor light-emitting device according to the present invention has an n/p/n junction light- emitting device structure unlike the related art p/n junction light-emitting device.
[37] As described above, the present invention can provide a scheme in which a low carrier concentration generating due to the structure of the related art p/n junction light-emitting device and low Mg doping efficiency of the p-GaN nitride semi¬ conductor itself, and a current crowding problem depending on an increase of contact resistance accordingly can be overcome.
[38] More particularly, by forming the n-AlInN nitride semiconductor on an upper side, transparent conductive oxide such as ITO having optical transmittance of 95% higher can be used as a transparent electrode. That is, the transparent electrode for applying a bias voltage to an n- AlInN layer may include a transparent resistive material or transparent conductive oxide, which can maximize current spreading so as to maximize the optical output and has a good optical transmittance. ITO, ZnO, RuOx, IrOx, NiO, or Au alloy metal including Ni may be used as such a material. It is thus possible to implement the optical output of 50% or higher compared to the related art p/n junction through the use of the transparent electrode.
[39] Furthermore, the present invention can lower an operating voltage owing to low contact resistance and can improve the reliability of devices accordingly. More par¬ ticularly, a high output light-emitting device using a flip chip method necessarily requires a low operating voltage when being applied with the current of a large area 30OmA or higher. If contact resistance of the light-emitting device itself is relatively high so as to apply the same current, the operating voltage is increased. Accordingly, heat of 100°C or higher is generated in the light-emitting device itself. Heat generated internally has a decisive influence on the reliability.
[40] According to the n/p/n junction light-emitting device in accordance with the present invention, when the same current is applied due to low contact resistance, the device can be driven a relatively low operating voltage and heat generating within the device is low. Therefore, a light-emitting device with high reliability can be provided.
[41] Meanwhile, FIG. 2 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to a second embodiment of the present invention.
[42] The stack structure of the nitride semiconductor light-emitting device 21 according to a second embodiment of the present invention shows a case where a super grading n-InxGal-xN layer 24 whose energy bandgap is controlled by sequentially changing the indium composition is further formed on the n- AlInN layer 16, when compared with the nitride semiconductor light-emitting device 1 shown in FIG. 1. At this time, the super grading n-InxGal-xN layer 24 can be formed to have the composition of 0<x <0.2. At this time, the super grading n-InxGal-xN layer 24 may be doped with silicon.
[43] A nitride semiconductor light-emitting device 21 having this stack structure can be considered as an n/n/p/n junction light-emitting device. Further, in the nitride semi¬ conductor light-emitting device 21 having this stack structure, a transparent electrode for applying a bias voltage can be formed in the super grading n-InxGal-xN layer 24.
[44] Furthermore, though not shown in the drawing, an InGaN/AlInGaN supper lattice structure layer or an InGaN/InGaN supper lattice structure layer can be formed on the n- AlInN layer 16 instead of the super grading n-InxGal-xN layer 24. In this case, the InGaN/AlInGaN supper lattice structure layer or the InGaN/InGaN supper lattice structure layer may be doped with silicon. [45] The structure of an active layer adopted in a nitride semiconductor light-emitting device 31 according to the present invention will be described in more detail with reference to FlG. 3. FlG. 3 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to a third embodiment of the present invention. The layers (the same reference numerals given), which have been described with reference to FlG. 1, of the stack structure shown in FlG. 3, will not be described.
[46] In the nitride semiconductor light-emitting device 31 according to a third embodiment of the present invention, a low-mole InxGal-xN layer 10 having a low content of indium that controls the strain of the active layer is formed in order to increase internal quantum efficiency, as shown in FlG. 3. Furthermore, in order to improve the optical output and reverse leakage current due to indium fluctuation, SiNx cluster layers 33, 35, which are controlled in atomic scale form, are further formed on top and bottom surfaces of the low-mole InxGal-xN layer 10, respectively.
[47] Furthermore, the active layer that emits light can have a single quantum well structure or a multiple quantum well structure formed of an InYGaI-YN well layer/Inz Gal-zN barrier layer.
[48] FlG. 3 shows an example of the light-emitting device having a multiple quantum well structure in which SiNx cluster layers 39, 45 are further provided between InYGa 1-YN well layers 37, 43 and InzGal-zN barrier layers 41, 47 as the active layers. In this case, in order to improve light-emitting efficiency of the active layer, the composition ratio can be controlled to InYGaI-YN well layer (0<y<0.35)/SiNx cluster layer/InzGal-zN barrier layer(0<z<0.1). Further, when considering the relation with the low-mole InxGal-xN layer 10 having a low content of indium, the content of indium doped into the InYGaI-YN well layers 37, 43, the content of indium doped into the InzGal-zN barrier layers 41, 47, and the content of indium doped into the low- mole InxGal-xN layer 10 can be controlled to have the values of 0<x<0.1, 0<y<0.35 and 0<z<0.1, respectively.
[49] Furthermore, though not shown in the drawing, a GaN cap layer that controls the amount of indium fluctuation in the InYGaI-YN well layer can be further formed between the InYGaI-YN well layer and the InzGal-zN barrier layer, which form the active layers. At this time, the contents of indium of the well layer and the barrier layer that emit light can be constructed using InγGal-γN(0<y<0.35)/GaN cap/InzGal-zN(0 <z<0.1).
[50] Furthermore, after the last layer of the active layer, which has a single quantum well structure or a multiple quantum well structure, is grown, a SiNx cluster layer 140 is grown to a thickness of atomic scale, so that internal diffusion of the active layer within Mg atoms of the p-GaN layer 100 can be prohibited. [51] Meanwhile, FlG. 4 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to a fourth embodiment of the present invention. The layers (the same reference numerals given), which have been described with reference to FlG. 1, of the stack structure shown in FlG. 4, will not be described.
[52] A nitride semiconductor light-emitting device 51 according to a fourth embodiment of the present invention further includes a super grading n-InxGal-xN layer 52 whose energy bandgap is controlled by sequentially changing the indium composition is further formed on the p-GaN layer 14. Furthermore, FlG. 4 shows a case where an n- AlInN layer 54 is further formed on the super grading n-InxGal-xN layer 52.
[53] The nitride semiconductor light-emitting device 51 having this stack structure can be interpreted as an n/n/p/n junction light-emitting device. Further, in the nitride semi¬ conductor light-emitting device 51 having this stack structure, a transparent electrode for applying a bias voltage may be formed in the n- AlInN layer 54.
[54] Meanwhile, although FlG. 4 shows a case where the super grading n-InxGal-xN layer 52 is formed on the p-GaN layer 15, an InGaN/AlInGaN supper lattice structure layer or an InGaN/InGaN supper lattice structure may be formed on the p-GaN layer 15 instead of the super grading n-InxGal-xN layer 52.
[55] Furthermore, FlG. 5 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to a fifth embodiment of the present invention. The layers (the same reference numerals given), which have been described with reference to FlG. 1, of the stack structure shown in FlG. 5, will not be described.
[56] A nitride semiconductor light-emitting device 61 according to a fifth embodiment of the present invention is characterized in that a p- AlInN layer 66 is formed on the p- GaN layer 16. In this case, the p- AlInN layer 66 may be doped with magnesium.
[57] The nitride semiconductor light-emitting device 61 having this stack structure can be interpreted as a p/n junction light-emitting device, but can provide light-emitting efficiency similar to other embodiments by way of a physical characteristic of the p- AlInN layer 66. Further, in the nitride semiconductor light-emitting device 61 having this stack structure, a transparent electrode for applying a bias voltage may be formed in the p- AlInN layer 66.
[58] Further, FlG. 6 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to a sixth embodiment of the present invention.
[59] The stack structure of a nitride semiconductor light-emitting device 71 according to a sixth embodiment of the present invention shows a case where a super grading n-Inx Gal-xN layer 74 whose energy bandgap is controlled by sequentially changing the indium composition is further formed on the p- AlInN layer 66, when compared with the nitride semiconductor light-emitting device 61 shown in FlG. 5. At this time, the super grading n-InxGal-xN layer 74 may be formed to have the composition of 0<x< 0.2. At this time, the super grading n-InxGal-xN layer 74 may be doped with silicon.
[60] A nitride semiconductor light-emitting device 71 having this stack structure can be considered as an n/p/p/n junction light-emitting device. Further, in the nitride semi¬ conductor light-emitting device 71 having this stack structure, a transparent electrode for applying a bias voltage may be formed in the super grading n-InxGal-xN layer 74.
[61] Furthermore, though not shown in the drawing, an InGaN/AlInGaN supper lattice structure layer or an InGaNTInGaN supper lattice structure layer may be formed on the n- AlInN layer 66 instead of the super grading n-InxGal-xN layer 74. In this case, the InGaN/AlInGaN supper lattice structure layer or the InGaN/InGaN supper lattice structure layer may be doped with silicon.
[62] Meanwhile, FIG. 7 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to a seventh embodiment of the present invention.
[63] A nitride semiconductor light-emitting device 81 according to the present invention includes a buffer layer 84 formed on the substrate 82, as shown in FIG. 7. In this case, the buffer layer 84 may have an AlInN/GaN stack structure, an InGaN/GaN supper lattice structure, an InxGal-xN/GaN stack structure or the stack structure of AIxInYGa l-(x+γ)N/InxGal-xN/GaN.
[64] Further, an In-doped GaN layer 86 into which indium is doped is formed on the buffer layer 84. A n-type first electrode layer is formed on the In-doped GaN layer 86. In this case, a Si-In co-doped GaN layer 88 into which silicon and indium are doped at the same time can be adopted as the n-type first electrode layer.
[65] Furthermore, an n-AlInN cladding layer 90 is formed on the Si-In co-doped GaN layer 88. An n-InGaN layer 92 is formed on the n- AlInN cladding layer 90. An active layer 94 that emits light is also formed on the n-InGaN layer 92. The active layer 94 may have a single quantum well structure or a multiple quantum well structure. An example of the stack structure constituting the active layer 94 will be described in more detail later on with reference to FIG. 9. In addition, according to the active layer 94 in accordance with the present invention, there is an advantage in that sufficient optical efficiency can be accomplished even the active layer 94 has a single quantum well structure.
[66] Thereafter, a p-InGaN layer 96 is formed on the active layer 94. A p- AlInN cladding layer 98 is formed on the p-InGaN layer 96. Furthermore, a p-GaN layer 100 is formed on the p- AlInN cladding layer 98. At this time, the p-GaN layer 100 may be doped with magnesium (Mg).
[67] In addition, an n-type second electrode layer is formed on the p-GaN layer 100. In this case, a super grading n-InxGal-xN layer 102 whose energy bandgap is controlled by sequentially changing the indium composition can be adopted as the n-type second electrode layer. At this time, the composition of the super grading n-InxGal-xN layer 102 can be controlled to 0<x<0.2. Further, the super grading n-InxGal-xN layer 102 may doped with silicon.
[68] As described above, in the nitride semiconductor light-emitting device according to the present invention, both the first electrode layer 88 and the second electrode layer 102 are formed using an n-type nitride semiconductor and the p-GaN layer 100 is formed therebetween. Therefore, in view of the above structure, it can be considered that the nitride semiconductor light-emitting device of the present invention has an npn junction light-emitting device structure unlike the related art pn junction light-emitting device.
[69] Furthermore, the n-type nitride semiconductor (e.g., the super grading n-InxGal-x
N layer 102), which is used as the second electrode layer, has resistance lower than that of an existing p-GaN contact layer. Thus, contact resistance can be reduced and current implantation can be maximized. In addition, a transparent electrode for applying a bias voltage to the second electrode layer can include a transparent resistive material or transparent conductive oxide, which can maximize current dispersing so as to maximize the optical output and have a good optical transmittance. ITO, ZnO, RuOx, IrOx, NiO, or Au alloy metal including Ni may be used as such a material.
[70] In this case, though not shown in the drawing, the second electrode layer may have an InGaN/AlInGaN supper lattice structure layer or an InGaN/InGaN supper lattice structure layer. Further, the InGaN/AlInGaN supper lattice structure layer or the InGaN/InGaN supper lattice structure layer may be doped with silicon.
[71] Furthermore, though not shown in the drawing, an n- AlInN layer may be used as the second electrode layer.
[72] According to the nitride semiconductor light-emitting device 81 constructed above in accordance with the present invention, the n- AlInN cladding layer 90 and the p- AlInN cladding layer 98 are inserted lower/upper side to the active layers 94, re¬ spectively. Therefore, internal quantum efficiency can be improved by prohibiting carrier implantation efficiency within the active layer 94 and current overflow.
[73] Further, FIG. 8 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to an eighth embodiment of the present invention. The layers (the same reference numerals given), which have been described with reference to FIG. 7, of the stack structure shown in FIG. 8, will not be described.
[74] The nitride semiconductor light-emitting device 111 according to an eighth embodiment of the present invention is different from the nitride semiconductor light- emitting device 81 shown in FIG. 7 according to the seventh embodiment in that an In xGal-xN layer 114 having a low content of indium. [75] That is, according to the nitride semiconductor light-emitting device 111 in accordance with an eighth embodiment of the present invention, the InxGal-xN layer 114 having a low content of indium is further formed between the n-InGaN layer 92 and the active layer 94. The reason is that in order to increase internal quantum efficiency, the InxGal-xN layer 114 having a low content of indium is further formed so that it can control the strain of the active layer 94.
[76] The structure of an active layer adopted in a nitride semiconductor light-emitting device 121 according to the present invention will be described in more detail with reference to FlG. 9. FlG. 9 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to an ninth embodiment of the present invention. The layers (the same reference numerals given), which have been described with reference to FlG. 7, of the stack structure shown in FlG. 9, will not be described.
[77] The nitride semiconductor light-emitting device 121 according to a ninth embodiment of the present invention includes a low-mole InxGal-xN layer 122 having a low content of indium, which controls the strain of the active layer, in order to increase internal quantum efficiency, as shown in FlG. 9. Furthermore, in order to improve the optical output and reverse leakage current due to indium fluctuation, SiNx cluster layers 132, 134, which are controlled in atomic scale form, are further formed on top and bottom surfaces of the low-mole InxGal-xN Iayerl22.
[78] Furthermore, the active layer that emits light may have a single quantum well structure or a multiple quantum well structure formed using an InYGaI-YN well layer/ InzGal-zN barrier layer.
[79] FlG. 9 shows an example of the light-emitting device having a multiple quantum well structure in which SiNx cluster layers 136, 138 are further provided between InY GaI-YN well layers 124, 128 and InzGal-zN barrier layers 126, 130 as the active layers. In this case, in order to improve emission efficiency of the active layer, the composition ratio may be controled to InYGaI-YN well layer(0<y<0.35)/SiNx cluster layer/InzGal-zN barrier layer(0<z<0.1). Further, when considering the relation with the low-mole InxGal-xN layer 122 having a low content of indium, the content of indium doped into the InYGaI-YN well layers 124, 128, the content of indium doped into the InzGal-zN barrier layers 126, 130 and the content of indium doped into the low-mole InxGal-xN layer 122 may be controlled to have 0<x<0.1, 0<y<0.35 and 0<z <0.1, respectively.
[80] Furthermore, though not shown in the drawing, a GaN cap layer that controls the amount of indium fluctuation in the InYGaI-YN well layer may be further formed between the InYGaI-YN well layer and the InzGal-zN barrier layer, which form the active layers. At this time, the content of indium of each of the well layer and the barrier layer that emit light may be constructed using InγGal-γN(0<y<0.35)/GaN cap/ InzGal-zN(0<z<0.1).
[81] Furthermore, after the last layer of the active layer, which has a single quantum well structure or a multiple quantum well structure, is grown, a SiNx cluster layer 140 is grown to a thickness of atomic scale, so that internal diffusion of the active layer within Mg atoms of the p-GaN layer 100 can be prohibited.
[82] Meanwhile, FIG. 10 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to a tenth embodiment of the present invention. The layers (the same reference numerals given), which have been described with reference to FIG. 7, of the stack structure shown in FIG. 10, will not be described.
[83] A nitride semiconductor light-emitting device 141 according to a tenth embodiment of the present invention includes an active layer 94 formed on an n- AlInN cladding layer 90 and a p-AlInN cladding layer 98 formed on the active layer 94.
[84] That is, the nitride semiconductor light-emitting device 141 according to a tenth embodiment of the present invention has a modified stack structure in which the n- InGaN layer 92 and the p-InGaN layer 96 are not formed when compared with the nitride semiconductor light-emitting device 81 according to a seventh embodiment shown in FIG. 7.
[85] Further, FIG. 11 is a view schematically showing the stack structure of a nitride semiconductor light-emitting device according to an eleventh embodiment of the present invention. The layers (the same reference numerals given), which have been described with reference to FIG. 7, of the stack structure shown in FIG. 11, will not be described.
[86] A nitride semiconductor light-emitting device 151 according to an eleventh embodiment of the present invention includes an active layer 94 formed on a Si-In co- doped GaN layer 88 (i.e., a first electrode layer), and a p-InGaN layer 96 and a p- AlInN cladding layer 98 both of which are formed on the active layer 94.
[87] That is, the nitride semiconductor light-emitting device 151 according to a eleventh embodiment of the present invention has a modified stack structure in which the n- AlInN cladding layer 90 and the n-InGaN layer 92 are not formed when compared with the nitride semiconductor light-emitting device 81 according to a seventh embodiment shown in FIG. 7. Industrial Applicability
[88] According to a nitride semiconductor light-emitting device and fabricating method thereof in accordance with the present invention, there are advantages in that the crys- tallinity of an active layer constituting a nitride semiconductor light-emitting device can be improved and the optical output and reliability can be improved.

Claims

Claims
[1] A nitride semiconductor light-emitting device, comprising: a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer having AlIn, which is formed on the second nitride semiconductor layer [2] The nitride semiconductor light-emitting device as claimed in claim 1, wherein a substrate, and a buffer layer formed on the substrate are further formed under the first nitride semiconductor layer. [3] The nitride semiconductor light-emitting device as claimed in claim 1, wherein the first nitride semiconductor layer comprises: a GaN based layer into which In is doped or not doped; a first electrode layer formed on the GaN based layer; and an InxGal-xN layer formed on the first electrode layer. [4] The nitride semiconductor light-emitting device as claimed in claim 2, wherein the buffer layer has one of an AlInN/GaN stack structure, an InGaN/GaN supper lattice structure, an InxGal-xN/GaN stack structure and a stack structure of an
AlxInvGal-(x+γ)N/InxGal-xN/GaN. [5] The nitride semiconductor light-emitting device as claimed in claim 3, wherein the first electrode layer is a GaN based layer into which silicon and indium are doped at the same time. [6] The nitride semiconductor light-emitting device as claimed in claim 1, wherein a first SiNx cluster layer and a second SiNx cluster layer are further formed on bottom and top surfaces of the InxGal-xN layer, respectively, which is included in the first nitride semiconductor layer. [7] The nitride semiconductor light-emitting device as claimed in claim 6, wherein the first SiNx cluster layer and the second SiNx cluster layer are formed to a thickness of atomic scale. [8] The nitride semiconductor light-emitting device as claimed in claim 1, wherein the active layer has a single quantum well structure or a multiple quantum well structure formed using an InYGaI-YN well layer/InzGal-zN barrier layer. [9] The nitride semiconductor light-emitting device as claimed in claim 8, further comprising a SiNx cluster layer formed between the InYGaI-YN well layer and the InzGal-zN barrier layer forming the active layer. [10] The nitride semiconductor light-emitting device as claimed in claim 8, further comprising a GaN based cap layer formed between the InYGaI-YN well layer and the InzGal-zN barrier layer forming the active layer. [11] The nitride semiconductor light-emitting device as claimed in claim 1, further comprising a SiNx cluster layer formed between the active layer and the second nitride semiconductor layer. [12] The nitride semiconductor light-emitting device as claimed in claim 8, wherein the content of indium doped into the InYGaI-YN well layer, the content of indium doped into the InzGal-zN barrier layer and the content of indium doped into the InxGal-xN layer have the values of 0<x<0.1, 0<y<0.35 and 0<z<0.1, re¬ spectively. [13] The nitride semiconductor light-emitting device as claimed in claim 1, wherein the second nitride semiconductor layer is doped with magnesium. [14] The nitride semiconductor light-emitting device as claimed in claim 1, wherein the third nitride semiconductor layer is doped with silicon or magnesium. [15] The nitride semiconductor light-emitting device as claimed in claim 1, wherein a fourth nitride semiconductor layer of a super grading structure in which the content of indium is sequentially changed or a supper lattice structure including
In or Al is further formed on a top surface of the third nitride semiconductor layer. [16] The nitride semiconductor light-emitting device as claimed in claim 15, wherein the super grading structure has an InxGal-xN layer. [17] The nitride semiconductor light-emitting device as claimed in claim 15, wherein the supper lattice structure is an InGaN/AlInGaN supper lattice structure layer or an InGaN/InGaN supper lattice structure layer. [18] The nitride semiconductor light-emitting device as claimed in claim 15, wherein the fourth nitride semiconductor layer is doped with silicon. [19] The nitride semiconductor light-emitting device as claimed in claim 1, wherein a fourth nitride semiconductor layer of a super grading structure in which the content of indium is sequentially changed or a supper lattice structure including
In or Al is further formed on a bottom surface of the third nitride semiconductor layer. [20] The nitride semiconductor light-emitting device as claimed in claim 19, wherein the super grading structure is an InxGal-xN layer (0<x<0.2). [21] The nitride semiconductor light-emitting device as claimed in claim 19, wherein the supper lattice structure is an InGaN/AlInGaN supper lattice structure layer or an InGaN/InGaN supper lattice structure layer. [22] The nitride semiconductor light-emitting device as claimed in claim 1, further comprising a transparent electrode formed on the third nitride semiconductor layer. [23] The nitride semiconductor light-emitting device as claimed in claim 22, wherein the transparent electrode is formed using transparent conductive oxide or a transparent resistive material. [24] The nitride semiconductor light-emitting device as claimed in claim 23, wherein the transparent conductive oxide is formed using one of ITO, ZnO, IrOx, RuOx and NiO materials. [25] The nitride semiconductor light-emitting device as claimed in claim 23, wherein the transparent resistive material is formed using an Au alloy layer including Ni metal. [26] The nitride semiconductor light-emitting device as claimed in claim 15, further comprising a transparent electrode formed on the fourth nitride semiconductor layer. [27] A method of fabricating a nitride semiconductor light-emitting device, the method comprising: forming a buffer layer on a substrate; forming a GaN based layer on the buffer layer; forming a first electrode layer on the GaN based layer; forming an InxGal-xN layer on the first electrode layer; forming an active layer on the InxGal-xN layer; forming a p-GaN based layer on the active layer; and forming an n- AlInN layer or a p- AlInN layer on the p-GaN based layer. [28] The method as claimed in claim 27, further comprising the step of forming an n-
InxGal-xN layer of a super grading structure whose content of indium is se¬ quentially changed or an InGaN/AlInGaN supper lattice structure layer or an
InGaN/InGaN supper lattice structure layer on the p-GaN based layer. [29] The method as claimed in claim 27, wherein the buffer layer has one of an
AlInN/GaN stack structure, an InGaN/GaN supper lattice structure, an InxGal-x
N/GaN stack structure and a stack structure of an AIxInYGaI -(x+γ)N/InxGal-x
N/GaN. [30] The method as claimed in claim 27, wherein the first electrode layer is a GaN based layer into which silicon and indium are doped at the same time. [31] The method as claimed in claim 27, further comprising the step of forming a first
SiNx cluster layer and a second SiNx cluster layer, respectively, prior to and after the step of forming the InxGal-xN layer. [32] The method as claimed in claim 27, further comprising the step of forming a SiN x cluster layer between the active layer and the p-GaN based layer. [33] The method as claimed in claim 27, further comprising the step of forming an n-
InxGal-xN layer of a super grading structure whose content of indium is se- quentially changed or an InGaN/AlInGaN supper lattice structure layer or an
InGaN/InGaN supper lattice structure layer on the n- AlInN layer or the p- AlInN layer. [34] The method as claimed in claim 27, further comprising the step of forming a transparent electrode on the n- AlInN layer or the p- AlInN layer. [35] The method as claimed in claim 33, further comprising the step of forming a transparent electrode on the super grading structure or the supper lattice structure layer. [36] A nitride semiconductor light-emitting device, comprising: a substrate; a buffer layer forming on the substrate; a first GaN based layer into which In is doped, the first GaN based layer being formed on the buffer layer; a second GaN based layer into which Si and In are doped, the second GaN based layer being formed on the first GaN based layer; an InxGal-xN layer formed on the second GaN based layer; an active layer formed on the InxGal-xN layer; a p-GaN based layer formed on the active layer; and an n- AlInN layer or a p- AlInN layer formed on the p-GaN based layer. [37] The nitride semiconductor light-emitting device as claimed in claim 36, wherein a nitride semiconductor layer of a super grading structure whose content of indium is sequentially changed or a supper lattice structure including In or Al is further formed below the n- AlInN layer or p- AlInN layer. [38] The nitride semiconductor light-emitting device as claimed in claim 36, wherein a nitride semiconductor layer of a super grading structure whose content of indium is sequentially changed or a supper lattice structure including In or Al is further formed on the n- AlInN layer or p- AlInN layer. [39] The nitride semiconductor light-emitting device as claimed in claim 36, further comprising a plurality of SiNx cluster layers formed between the second GaN based layer and the p-GaN based layer. [40] The nitride semiconductor light-emitting device as claimed in claim 36, further comprising a transparent electrode formed on the n- AlInN layer or p- AlInN layer. [41] The nitride semiconductor light-emitting device as claimed in claim 38, further comprising a transparent electrode formed on the nitride semiconductor layer of the super grading structure or the supper lattice structure. [42] A nitride semiconductor light-emitting device, comprising: a first nitride semiconductor layer; an n- AlInN cladding layer formed on the first nitride semiconductor layer; an n-InGaN layer formed on the n-AlInN cladding layer; an active layer formed on the n-InGaN layer; a p-InGaN layer formed on the active layer; a p- AlInN cladding layer formed on the p-InGaN layer; and a second nitride semiconductor layer formed on the p- AlInN cladding layer. [43] The nitride semiconductor light-emitting device as claimed in claim 42, further comprising a second electrode layer formed on the second nitride semiconductor layer. [44] The nitride semiconductor light-emitting device as claimed in claim 42, wherein a substrate, and a buffer layer formed on the substrate are further formed under the first nitride semiconductor layer. [45] The nitride semiconductor light-emitting device as claimed in claim 42, wherein the first nitride semiconductor layer comprises an In-doped GaN based layer into which In is doped; and a first electrode layer formed on the In-doped GaN based layer. [46] The nitride semiconductor light-emitting device as claimed in claim 45, wherein the first electrode layer is a GaN based layer into which silicon and indium are doped at the same time. [47] The nitride semiconductor light-emitting device as claimed in claim 42, further comprising an InxGal-xN layer formed between the n-InGaN layer and the active layer. [48] The nitride semiconductor light-emitting device as claimed in claim 42, further comprising a plurality of SiNx cluster layers formed on the first nitride semi¬ conductor layer and the p- AlInN cladding layer. [49] The nitride semiconductor light-emitting device as claimed in claim 43, wherein the second electrode layer is a super grading structure in which the content of indium is sequentially changed or a supper lattice structure including In. [50] The nitride semiconductor light-emitting device as claimed in claim 43, wherein the second electrode layer is formed using an n- AlInN layer. [51] The nitride semiconductor light-emitting device as claimed in claim 43, wherein the second electrode layer is doped with silicon. [52] The nitride semiconductor light-emitting device as claimed in claim 42, further comprising a transparent electrode formed on the second nitride semiconductor layer. [53] The nitride semiconductor light-emitting device as claimed in claim 43, further comprising a transparent electrode formed on the second electrode layer. [54] A nitride semiconductor light-emitting device, comprising: a first nitride semiconductor layer; an n- AlInN cladding layer formed on the first nitride semiconductor layer; an active layer formed on the n- AlInN cladding layer; a p- AlInN cladding layer formed on the active layer; and a second nitride semiconductor layer formed on the p- AlInN cladding layer. [55] The nitride semiconductor light-emitting device as claimed in claim 54, further comprising a second electrode layer formed on the second nitride semiconductor layer. [56] The nitride semiconductor light-emitting device as claimed in claim 54, wherein a substrate, and a buffer layer formed on the substrate are further formed under the first nitride semiconductor layer. [57] The nitride semiconductor light-emitting device as claimed in claim 54, wherein the first nitride semiconductor layer comprises an In-doped GaN based layer into which In is doped; and a first electrode layer formed on the In-doped GaN based layer. [58] The nitride semiconductor light-emitting device as claimed in claim 57, wherein the first electrode layer is a GaN based layer into which silicon and indium are doped at the same time. [59] The nitride semiconductor light-emitting device as claimed in claim 54, further comprising an InxGal-xN layer formed between the n- AlInN cladding layer and the active layer. [60] The nitride semiconductor light-emitting device as claimed in claim 54, further comprising a plurality of SiNx cluster layers formed on the first nitride semi¬ conductor layer and the p- AlInN cladding layer. [61] The nitride semiconductor light-emitting device as claimed in claim 55, wherein the second electrode layer is a super grading structure in which the content of indium is sequentially changed or a supper lattice structure including In. [62] The nitride semiconductor light-emitting device as claimed in claim 55, wherein the second electrode layer is formed using an n- AlInN layer. [63] The nitride semiconductor light-emitting device as claimed in claim 55, wherein the second electrode layer is doped with silicon. [64] The nitride semiconductor light-emitting device as claimed in claim 54, further comprising a transparent electrode formed on the second nitride semiconductor layer. [65] The nitride semiconductor light-emitting device as claimed in claim 55, further comprising a transparent electrode formed on the second electrode layer. [66] The nitride semiconductor light-emitting device as claimed in claim 54, further comprising a p-InGaN layer formed between the active layer and the p- AlInN cladding layer. [67] A nitride semiconductor light-emitting device, comprising: a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer; a p-InGaN layer formed on the active layer; a p- AlInN cladding layer formed on the p-InGaN layer; and a second nitride semiconductor layer formed on the p- AlInN cladding layer. [68] The nitride semiconductor light-emitting device as claimed in claim 67, further comprising a second electrode layer formed on the second nitride semiconductor layer. [69] The nitride semiconductor light-emitting device as claimed in claim 67, wherein a substrate, and a buffer layer formed on the substrate are further formed under the first nitride semiconductor layer. [70] The nitride semiconductor light-emitting device as claimed in claim 67, wherein the first nitride semiconductor layer comprises an In-doped GaN based layer into which In is doped; and a first electrode layer formed on the In-doped GaN based layer. [71] The nitride semiconductor light-emitting device as claimed in claim 70, wherein the first electrode layer is a GaN based layer into which silicon and indium are doped at the same time. [72] The nitride semiconductor light-emitting device as claimed in claim 67, further comprising an InxGal-xN layer formed between the first electrode layer and the active layer. [73] The nitride semiconductor light-emitting device as claimed in claim 67, further comprising a plurality of SiNx cluster layers formed on the first nitride semi¬ conductor layer and the p- AlInN cladding layer. [74] The nitride semiconductor light-emitting device as claimed in claim 68, wherein the second electrode layer is a super grading structure in which the content of indium is sequentially changed or a supper lattice structure including In. [75] The nitride semiconductor light-emitting device as claimed in claim 68, wherein the second electrode layer is formed using an n- AlInN layer. [76] The nitride semiconductor light-emitting device as claimed in claim 68, wherein the second electrode layer is doped with silicon. [77] The nitride semiconductor light-emitting device as claimed in claim 67, further comprising a transparent electrode formed on the second nitride semiconductor layer. [78] The nitride semiconductor light-emitting device as claimed in claim 68, further comprising a transparent electrode formed on the second electrode layer. [79] A method of fabricating a nitride semiconductor light-emitting device, the method comprising: forming a buffer layer on a substrate; forming an In-doped GaN based layer into which indium (In) is doped on the buffer layer; forming a first electrode layer on the In-doped GaN based layer; forming an n- AlInN cladding layer on the first electrode layer; forming an active layer on the n- AlInN cladding layer; forming a p- AlInN cladding layer on the active layer; forming a p-GaN based layer on the p- AlInN cladding layer; and forming a second electrode layer on the p-GaN based layer. [80] The method as claimed in claim 79, wherein the first electrode layer is a GaN based layer into which silicon and indium are doped at the same time. [81] The method as claimed in claim 79, further comprising the step of forming an n-
InGaN layer between the n- AlInN cladding layer and the active layer. [82] The method as claimed in claim 81, further comprising the step of forming an In xGal-xN layer between the n-InGaN layer and the active layer. [83] The method as claimed in claim 79, further comprising the step of forming an In xGal-xN layer between the n- AlInN cladding layer and the active layer. [84] The method as claimed in claim 83, further comprising the step of forming a plurality of SiNx cluster layers under surface of the InxGal-xN layer and between the InxGal-xN layer and the p- AlInN cladding layer. [85] The method as claimed in claim 79, wherein the second electrode layer is one of an n-InxGal-xN layer of a super grading structure in which the content of indium is sequentially changed, an InGaN/InGaN supper lattice structure layer, an InGaN/AlInGaN supper lattice structure layer and an n- AlInN layer. [86] The method as claimed in claim 79, further comprising the step of forming a p-
InGaN layer between the active layer and the p- AlInN cladding layer. [87] The method as claimed in claim 79, further comprising the step of forming a transparent electrode in the second electrode layer. [88] A method of fabricating a nitride semiconductor light-emitting device, the method comprising: forming a buffer layer on a substrate; forming an In-doped GaN based layer into which indium (In) is doped on the buffer layer; forming a first electrode layer on the In-doped GaN based layer; forming an active layer that emits light on the first electrode layer; forming a p-InGaN layer on the active layer; forming a p-AlInN cladding layer on the p-InGaN layer; forming a p-GaN based layer on the p- AlInN cladding layer; and forming a second electrode layer on the p-GaN based layer.
[89] The method as claimed in claim 88, wherein the first electrode layer is a GaN based layer into which silicon and indium are doped at the same time.
[90] The method as claimed in claim 88, further comprising the step of forming an In xGal-xN layer between the first electrode layer and the active layer.
[91] The method as claimed in claim 90, further comprising the step of forming a plurality of SiNx cluster layers under surface of the InxGal-xN layer and between the InxGal-xN layer and the p- AlInN cladding layer.
[92] The method as claimed in claim 88, wherein the second electrode layer is one of an n-InxGal-xN layer of a super grading structure in which the content of indium is sequentially changed, an InGaNTInGaN supper lattice structure layer, an InGaN/AlInGaN supper lattice structure layer and an n- AlInN layer.
[93] The method as claimed in claim 88, further comprising the step of forming a p-
InGaN layer between the active layer and the p- AlInN cladding layer.
[94] The method as claimed in claim 88, further comprising the step of forming a transparent electrode in the second electrode layer.
PCT/KR2005/002757 2004-08-26 2005-08-19 Nitride semicondctor light emitting device and fabrication method thereof WO2006022498A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US11/661,186 US8053794B2 (en) 2004-08-26 2005-08-19 Nitride semiconductor light emitting device and fabrication method thereof
EP20050781229 EP1794813B1 (en) 2004-08-26 2005-08-19 Nitride semiconductor light emitting device and fabrication method thereof
JP2007529680A JP2008511154A (en) 2004-08-26 2005-08-19 Nitride semiconductor light emitting device and manufacturing method thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2004-0067495 2004-08-26
KR20040067495A KR100611003B1 (en) 2004-08-26 2004-08-26 Nitride semiconductor LED and fabrication method thereof
KR20040067497A KR100609583B1 (en) 2004-08-26 2004-08-26 Nitride semiconductor LED and fabrication method thereof
KR10-2004-0067497 2004-08-26

Publications (1)

Publication Number Publication Date
WO2006022498A1 true WO2006022498A1 (en) 2006-03-02

Family

ID=35967676

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2005/002757 WO2006022498A1 (en) 2004-08-26 2005-08-19 Nitride semicondctor light emitting device and fabrication method thereof

Country Status (4)

Country Link
US (1) US8053794B2 (en)
EP (1) EP1794813B1 (en)
JP (2) JP2008511154A (en)
WO (1) WO2006022498A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101393953B1 (en) 2007-06-25 2014-05-13 엘지이노텍 주식회사 Light emitting device and method for manufacturing the same
US9136427B2 (en) 2010-01-05 2015-09-15 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI475717B (en) * 2008-05-09 2015-03-01 Advanced Optoelectronic Tech A semiconductor element that emits radiation
KR20110062128A (en) * 2009-12-02 2011-06-10 엘지이노텍 주식회사 Light emitting device, light emitting device package and method for fabricating the same
KR101712549B1 (en) * 2010-01-05 2017-03-22 서울바이오시스 주식회사 Light emitting diode having spacer layer
KR101754900B1 (en) * 2010-04-09 2017-07-06 엘지이노텍 주식회사 Light Emitting Device
KR101646664B1 (en) * 2010-05-18 2016-08-08 엘지이노텍 주식회사 Light emitting device, method for fabricating the light emitting device and light emitting device package
WO2017136832A1 (en) * 2016-02-05 2017-08-10 The Regents Of The University Of California Iii-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers
CN109300851A (en) * 2018-09-03 2019-02-01 淮安澳洋顺昌光电技术有限公司 A kind of low temperature p-type GaN epitaxy piece with Al and In doped growing
CN114220891B (en) * 2021-12-21 2024-02-23 江苏第三代半导体研究院有限公司 Epitaxial wafer of semiconductor device and manufacturing method and application thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1051074A (en) * 1996-08-02 1998-02-20 Fujitsu Ltd Semiconductor light emitting device
JPH1051070A (en) * 1996-07-29 1998-02-20 Fujitsu Ltd Semiconductor laser
US6051847A (en) * 1997-05-21 2000-04-18 Matsushita Electric Industrial Co., Ltd. Gallium nitride compound-based semiconductor light emitting device and process for producing gallium nitride compound-based semiconductor thin film
JP2000286451A (en) * 1998-11-17 2000-10-13 Nichia Chem Ind Ltd Nitride semiconductor device
JP2002033513A (en) * 2000-07-13 2002-01-31 Shiro Sakai Light emitting element
US6410939B1 (en) * 2000-10-12 2002-06-25 Sharp Kabushiki Kaisha Semiconductor light-emitting device and method of manufacturing the same
WO2004051707A2 (en) * 2002-12-04 2004-06-17 Emcore Corporation Gallium nitride-based devices and manufacturing process

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2295270A (en) * 1994-11-14 1996-05-22 Sharp Kk Surface-emitting laser with profiled active region
US5661074A (en) * 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5585648A (en) * 1995-02-03 1996-12-17 Tischler; Michael A. High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same
JPH08279649A (en) * 1995-04-05 1996-10-22 Mitsubishi Electric Corp Semiconductor laser and manufacture thereof
JP2003133246A (en) * 1996-01-19 2003-05-09 Matsushita Electric Ind Co Ltd Gallium nitride compound semiconductor light emitting element and its manufacturing method
JP3336855B2 (en) * 1996-03-27 2002-10-21 豊田合成株式会社 Group III nitride compound semiconductor light emitting device
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
JP3776538B2 (en) * 1996-12-24 2006-05-17 ローム株式会社 Semiconductor light emitting device and manufacturing method thereof
JP3374737B2 (en) * 1997-01-09 2003-02-10 日亜化学工業株式会社 Nitride semiconductor device
US6222207B1 (en) * 1999-05-24 2001-04-24 Lumileds Lighting, U.S. Llc Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
US6778582B1 (en) * 2000-03-06 2004-08-17 Novalux, Inc. Coupled cavity high power semiconductor laser
US7141444B2 (en) * 2000-03-14 2006-11-28 Toyoda Gosei Co., Ltd. Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP4581198B2 (en) * 2000-08-10 2010-11-17 ソニー株式会社 Heat treatment method for nitride compound semiconductor layer and method for manufacturing semiconductor device
US6534797B1 (en) * 2000-11-03 2003-03-18 Cree, Inc. Group III nitride light emitting devices with gallium-free layers
JP2002198560A (en) * 2000-12-26 2002-07-12 Sharp Corp Semiconductor light emitting element and its manufacturing method
JP2002319703A (en) * 2001-04-20 2002-10-31 Ricoh Co Ltd Semiconductor device and its manufacturing method
TW493287B (en) * 2001-05-30 2002-07-01 Epistar Corp Light emitting diode structure with non-conductive substrate
TWI262606B (en) 2001-08-30 2006-09-21 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor-element and its production method
KR100583163B1 (en) 2002-08-19 2006-05-23 엘지이노텍 주식회사 Nitride semiconductor and fabrication method for thereof
CN100375301C (en) 2002-11-06 2008-03-12 三垦电气株式会社 Semiconductor light emitting element and method for manufacturing the same
JP4324387B2 (en) * 2003-01-31 2009-09-02 シャープ株式会社 Oxide semiconductor light emitting device
US6987281B2 (en) 2003-02-13 2006-01-17 Cree, Inc. Group III nitride contact structures for light emitting devices
CN1275337C (en) 2003-09-17 2006-09-13 北京工大智源科技发展有限公司 High-efficiency high-brightness multiple active district tunnel reclaimed white light light emitting diodes
JP2004214698A (en) * 2004-03-29 2004-07-29 Nichia Chem Ind Ltd Nitride semiconductor light emitting element

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1051070A (en) * 1996-07-29 1998-02-20 Fujitsu Ltd Semiconductor laser
JPH1051074A (en) * 1996-08-02 1998-02-20 Fujitsu Ltd Semiconductor light emitting device
US6051847A (en) * 1997-05-21 2000-04-18 Matsushita Electric Industrial Co., Ltd. Gallium nitride compound-based semiconductor light emitting device and process for producing gallium nitride compound-based semiconductor thin film
JP2000286451A (en) * 1998-11-17 2000-10-13 Nichia Chem Ind Ltd Nitride semiconductor device
JP2002033513A (en) * 2000-07-13 2002-01-31 Shiro Sakai Light emitting element
US6410939B1 (en) * 2000-10-12 2002-06-25 Sharp Kabushiki Kaisha Semiconductor light-emitting device and method of manufacturing the same
WO2004051707A2 (en) * 2002-12-04 2004-06-17 Emcore Corporation Gallium nitride-based devices and manufacturing process

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101393953B1 (en) 2007-06-25 2014-05-13 엘지이노텍 주식회사 Light emitting device and method for manufacturing the same
US9136427B2 (en) 2010-01-05 2015-09-15 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
US10418514B2 (en) 2010-01-05 2019-09-17 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same

Also Published As

Publication number Publication date
US20070252135A1 (en) 2007-11-01
EP1794813B1 (en) 2015-05-20
JP2013058786A (en) 2013-03-28
US8053794B2 (en) 2011-11-08
EP1794813A1 (en) 2007-06-13
EP1794813A4 (en) 2010-09-29
JP2008511154A (en) 2008-04-10

Similar Documents

Publication Publication Date Title
EP1790017B1 (en) Nitride semiconductor light emitting device and fabrication method thereof
EP1794813B1 (en) Nitride semiconductor light emitting device and fabrication method thereof
US7429756B2 (en) Nitride semiconductor light emitting device
US8723197B2 (en) Nitride semiconductor light emitting device and method of manufacturing the same
EP1869715B1 (en) Nitride semiconductor led and fabrication method thereof
CN100576585C (en) Nitride semiconductor photogenerator and manufacture method thereof
KR100670534B1 (en) Nitride semiconductor LED and fabrication method thereof
KR100611003B1 (en) Nitride semiconductor LED and fabrication method thereof
KR100593151B1 (en) Nitride semiconductor LED and fabrication method thereof

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2007529680

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 11661186

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2005781229

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 381/MUMNP/2007

Country of ref document: IN

WWE Wipo information: entry into national phase

Ref document number: 200580032507.4

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2005781229

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 11661186

Country of ref document: US