WO2006016123A1 - Amelioration dans la construction de scies - Google Patents

Amelioration dans la construction de scies Download PDF

Info

Publication number
WO2006016123A1
WO2006016123A1 PCT/GB2005/003062 GB2005003062W WO2006016123A1 WO 2006016123 A1 WO2006016123 A1 WO 2006016123A1 GB 2005003062 W GB2005003062 W GB 2005003062W WO 2006016123 A1 WO2006016123 A1 WO 2006016123A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
edges
opposing
bevelled
saw
Prior art date
Application number
PCT/GB2005/003062
Other languages
English (en)
Inventor
Mark Lee
Raymond David Lohr
Original Assignee
Transense Technologies Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Transense Technologies Plc filed Critical Transense Technologies Plc
Priority to KR1020067019561A priority Critical patent/KR101179393B1/ko
Publication of WO2006016123A1 publication Critical patent/WO2006016123A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02551—Characteristics of substrate, e.g. cutting angles of quartz substrates

Definitions

  • the present invention relates to improvements in the construction of quartz and silicon SAW substrates, such as used in the fabrication of SAW (Surface Acoustic Wave) devices, and in particular to improvements in the surface finishing of such substrates.
  • SAW Surface Acoustic Wave
  • the ultimate tensile bending strength of a brittle material depends not only on its size and stiffness but also on the presence of pre-existing defects.
  • a quartz SAW device substrate is subjected to bending, for example simple 3-point bending, the surface on the outside of the bend is placed in tension whilst the surface on the inside of the bend is placed in compression.
  • Any pre-existing defect which exists in the surface under tension will, then, be an area of weakness and hence likely be the initial source of any failure of the substrate under bending.
  • the failure strength under bending will, therefore, be limited by the size of the largest pre-existing defect in the substrate.
  • quartz SAW substrates are produced by grinding and lapping operations, which results in a large number of small defects on the surfaces thereof whose size is characteristic of the grinding and lapping processes.
  • the upper surface of the substrate is then finished by polishing so as to facilitate deposition of metal thereto to form the various components of the SAW device.
  • the lower surface has not been so finished for two reasons: firstly, because the extra costs involved in polishing both surfaces of the component was deemed unnecessary, and secondly, because the unpolished surface was found to suppress reflection of the bulk wave during operation of the SAW device, thereby reducing parasitic losses which result from those reflections.
  • SAW devices are attached directly to a structural component, such as a shaft, rather than being housed in a case or the like which is then suitably fastened in place on the structural component.
  • Such devices may then be bonded in place by using conventional adhesives, or by glass fritting, or by high temperature soldering which may be achieved by providing a metallization layer on the bonding, lower, surface of the substrate of the device.
  • direct bonding of the SAW or STW device can result in stress concentrations arising due to step changes in the geometry of the substrate at its ends, and this, in turn, can lead to failure of the SAW device.
  • a planar quartz or silicon device such as a SAW or STW device, for bonding to a structural component, said comprising a substrate having opposing faces, wherein at leat one pair of opposing edges on each said face being bevelled.
  • the present invention further provides a method of production of a planar quartz or silicon substrate, in particular of SAW or STW substrates, comprising the step of bevelling at least one pair of opposing edges on each of an opposing pair of faces of the substrate.
  • a planar device and method of production thereof in accordance with the invention has the advantage that the bevelling eliminates the step change in geometry at the edges of the substrate, thereby reducing the stress concentrations that occurs at those edges. This, in turn, results in an improvement in the strain to failure characteristic of the device and hence increases the maximum sustainable load of the device when bonded to a structural component.
  • edges of the face of the substrate remote from that by which, in use, the device will be bonded to the structural component are bevelled.
  • all opposing edges on at least one side of the substrate are bevelled.
  • the bevelling angle may be varied to suit different environments, but an angular range of 45 - 60 degrees has been found to perform well over a range of different environments.
  • At least one pair of opposing edges on a pair of opposing faces of the substrate are bevelled, preferably all edges on said faces being bevelled.
  • the method of the invention may be further improved by further step of polishing opposing faces of the component following grinding and lapping operations so as to reduce the number and size of the defects in the surface. Further improvements may advantageously be achieved by also polishing the edges of the component in order to eliminate any stress raisers resulting from the cutting of the device from the wafer.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Un dispositif plan en silicone ou en quartz, par exemple une SCIE, à coller à un composant de structure, et composé d’un substrat à faces opposées. Au moins deux arêtes opposées à au moins une face sont biseautées afin d’éliminer des modifications d’étape de la géométrie aux arêtes du substrat.
PCT/GB2005/003062 2004-03-23 2005-03-22 Amelioration dans la construction de scies WO2006016123A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020067019561A KR101179393B1 (ko) 2004-03-23 2005-03-22 제약 조성물

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0417766.3 2004-08-10
GB0417766A GB0417766D0 (en) 2004-08-10 2004-08-10 Improvements in the construction of saw devices

Publications (1)

Publication Number Publication Date
WO2006016123A1 true WO2006016123A1 (fr) 2006-02-16

Family

ID=32982798

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2005/003062 WO2006016123A1 (fr) 2004-03-23 2005-03-22 Amelioration dans la construction de scies

Country Status (2)

Country Link
GB (1) GB0417766D0 (fr)
WO (1) WO2006016123A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013074422A1 (fr) * 2011-11-17 2013-05-23 Transense Technologies Plc Orientations de substrats de quartz pour capteur différentiel de température monolithique compact, et capteurs les utilisant

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4588473A (en) * 1982-09-28 1986-05-13 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor wafer process
EP1061645A2 (fr) * 1999-06-14 2000-12-20 Matsushita Electric Industrial Co., Ltd. Elément à ondes acoustiques de surface, procédé de fabrication du même et dispositif à ondes acoustiques de surface avec un tel élément
WO2003056613A1 (fr) * 2001-12-25 2003-07-10 Hitachi, Ltd. Dispositif semi-conducteur et procede de fabrication correspondant

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4588473A (en) * 1982-09-28 1986-05-13 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor wafer process
EP1061645A2 (fr) * 1999-06-14 2000-12-20 Matsushita Electric Industrial Co., Ltd. Elément à ondes acoustiques de surface, procédé de fabrication du même et dispositif à ondes acoustiques de surface avec un tel élément
WO2003056613A1 (fr) * 2001-12-25 2003-07-10 Hitachi, Ltd. Dispositif semi-conducteur et procede de fabrication correspondant
EP1484790A1 (fr) * 2001-12-25 2004-12-08 Hitachi, Ltd. Dispositif semi-conducteur et procede de fabrication correspondant

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013074422A1 (fr) * 2011-11-17 2013-05-23 Transense Technologies Plc Orientations de substrats de quartz pour capteur différentiel de température monolithique compact, et capteurs les utilisant
US9673777B2 (en) 2011-11-17 2017-06-06 Transense Technologies Plc Quartz substrate orientations for compact monolithic differential temperature sensor, and sensors using same

Also Published As

Publication number Publication date
GB0417766D0 (en) 2004-09-08

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