WO2006010289A2 - Procede pour separer des unites electroniques de type circuits (puces) qui sont disposees sur une plaquette en semi-conducteur - Google Patents

Procede pour separer des unites electroniques de type circuits (puces) qui sont disposees sur une plaquette en semi-conducteur Download PDF

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Publication number
WO2006010289A2
WO2006010289A2 PCT/CH2005/000451 CH2005000451W WO2006010289A2 WO 2006010289 A2 WO2006010289 A2 WO 2006010289A2 CH 2005000451 W CH2005000451 W CH 2005000451W WO 2006010289 A2 WO2006010289 A2 WO 2006010289A2
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WIPO (PCT)
Prior art keywords
wafer
liquid
circuit units
edge
laser radiation
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PCT/CH2005/000451
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German (de)
English (en)
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WO2006010289A3 (fr
Inventor
Jean-Marie Buchilly
Akos Spiegel
Bernold Richerzhagen
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Synova S.A.
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Application filed by Synova S.A. filed Critical Synova S.A.
Publication of WO2006010289A2 publication Critical patent/WO2006010289A2/fr
Publication of WO2006010289A3 publication Critical patent/WO2006010289A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Definitions

  • the invention relates to a method for singulating electronic circuit units (chips) arranged on a semiconductor wafer.
  • a furrow is understood to mean removal of material proceeding from a plate surface, wherein the plate is not severed.
  • a groove generally has a U-shaped or V-shaped cross-sectional profile, wherein the opening of the U or Vs points to the outside of the plate and the U-bottom or the V-tip can have sharp or rounded inner corners.
  • a semiconductor wafer is understood to mean a plate made of a semiconductor material, as a rule of silicon, in the surface region of which a multiplicity of electronic circuit units, so-called chips, are integrated by means of epitaxial methods. To produce these chips as inexpensively as possible, a plurality of such chips are arranged on one and the same wafer. These chips need later for the Installation in appropriate housing or to produce the electrical connections are isolated.
  • US Pat. No. 5,888,883 describes the separation of electronic circuit units (chips) arranged on a wafer.
  • the wafer backside is glued onto a flexible film (tape).
  • a diamond saw, a diamond trimmer or a laser operating with a free laser beam the circuit units were then removed in a matrix-like manner, starting from the surface carrying the electronic circuit units, by completely separating the wafer between the circuit units in a lattice-like manner.
  • US Pat. No. 5,888,883 proposes no longer severing the wafer completely, but only introducing furrows along the chip boundaries whose depth is greater than the thickness d c of the electronic circuit units that are separated later on. After the introduction of the groove, the wafer is glued to a flexible foil with its front side and ground off from its back side to over the furrow bottom. The electronic suits ⁇ circular units are now isolated.
  • the radius B of the semicircular cutting edge of the diamond saw blade had to be selected in accordance with US Pat. No. 6,294,439 such that A / B was greater than 0.3. It has now been found that in the case of the circuit units singled out according to the teachings of the three industrial property rights US Pat. No. 5,888,883, US Pat. No. 6,184,109 and US Pat. No. 6,294,439, a non-negligible rejection of defective electronic circuit units resulted.
  • the object of the invention is to propose a method for separating electronic circuit elements (chips) arranged on a semiconductor wafer, in which the edge breaking strength of the wafer as well as the edge breaking strength of the chips located on the wafer and separated therefrom are increased, so that the Aus ⁇ shot or a later functional failure compared to those separated according to the prior art is reduced.
  • the grooves can now be made with any desired methods, such as cutting with a diamond saw or material removal with a laser beam focused on the wafer surface.
  • laser radiation guided in a liquid jet will be used, such as e.g. As described in EP 0 762 947.
  • the liquid jet which may be a water jet at a radiation of the laser beam of 1, 06 microns or a frequency-multiplied radiation, serves as a waveguide for the laser radiation.
  • the main difference to a conventional treatment with laser radiation is that the laser radiation in the liquid jet is guided to the wafer surface, the material removed with the energy of the laser radiation can be carried away by the liquid without being deposited and the processing zone is cooled by the radiation-carrying liquid (the heat-stressed zone at the processing location is thus extremely small).
  • the separation of the wafer areas is then taken vor ⁇ in a subsequent step, in contrast to the prior art introduced in the already thinned wafer from the (the chips carrying) wafer top starting at the chip edges or between adjacent chips separating furrows with a residual depth are then broken and then for separation.
  • microcracks A good measure for an assessment of the presence of microcracks is the measurement of a force to be applied, in which a wafer or a chip removed therefrom breaks. If there are many microcracks (starting from the outer edges), then a bending force to be applied until breakage is small. The fewer microcracks are present, the greater the bending force to be applied until breakage, the higher the edge breakage resistance.
  • An applied theoretical bending force can be calculated on the basis of the dimensions between the chips, the thickness of the material and the arrangement of the bending device.
  • a bending force to be applied for the fracture was determined using the schematic experimental setup shown in FIG.
  • a chip 1 having an extension of 10 mm x 10 mm and a thickness of 125 microns is placed on 8 mm spaced apart rollers 3a and 3b and with a third, in the middle between the two rollers 3a and 3b pushing roller 5 by a force 6 charged until it breaks.
  • Chips were cut out of the wafer using a diamond saw ("dicing before grinding” or “dicing before grinding”) The other kind of chips were separated by the method according to the invention.
  • the cuts or grooves produced by the saw have a width of 45 ⁇ m and a groove depth of at least the wafer thickness.
  • laser radiation guided in a liquid jet is used, furrows having a furrow width of 46 ⁇ m and a depth of cut of 80% of the wafer thickness being produced.
  • the separated chips are now loaded so much until they break.
  • the chips are now inserted in such a way that once the circuit-carrying upper side is loaded with the roller 5 and another time the chip is turned, and the then upwardly facing chip back side is loaded via the roller 5. If the front side of the sawed chip is loaded, this results in a breaking force of 6.7 N and in the case of the laser radiation conducted in the liquid jet a breaking force of 10.1 N. Analogously, a load on the rear side results 6.8 N for the "saw” and 11 N for the laser radiation conducted in the liquid jet.
  • the bending frictional force to be applied is thus 50% and 61% greater in the case of grooves which are generated by the laser radiation emitted in the liquid jet, which, as stated above, indicates a greatly reduced number of microcracks.
  • laser radiation is to be used which experiences only a small absorption in the liquid of the liquid jet and which is absorbed as well as possible by the wafer surface. Good results could be achieved with the radiation of an Nd: YAG laser.
  • the Nd: YAG laser is operated as a pulsed laser, preferably at a wavelength of 1.644 ⁇ m; however, it is also possible to use a frequency doubled, tripled or quadrupled radiation.
  • the pulse frequency is a few kilohertz and is between 1 kHz and 50 kHz, preferably at 20 kHz to 50 kHz with an average average power between 10 W and 200 W, preferably 60 W.
  • the liquid keitsstrahl preferably a water jet, with a nozzle typically produced with a diameter of 10 ⁇ m to 100 ⁇ m; good results have been achieved with a liquid jet diameter of 50 ⁇ m.
  • a pressure prevails between 10 and 700 bar, preferably of 300 bar.
  • deionized water is preferably used as liquid for the liquid jet.
  • the water should have a high degree of purity, but can be made conductive with additives; Also materials can be added, which extend the free liquid jet length. However, it is also possible to use other liquids having the abovementioned properties.
  • a semiconductor wafer typically has a thickness d u w of 700 microns thick to ensure good handling and also to achieve good planicity.
  • the electronic circuit units (chips) integrated in the upper side of the wafer have only a thickness of typically 50 ⁇ m and 150 ⁇ m in some chip types.
  • the initially still "thick" Wafer thus has to be ground down to this final thickness to process the electronic circuit units (to save space, to have mechanical flexibility, to ensure heat dissipation through the chip, to act as a semiconductor active layer).
  • an edge 20 which converges at an acute angle a so-called “knife-edge” (knife edge) is formed on the outer edge of the wafer. From this "knife-edge” are now preferentially microcracks, which can propagate into the wafer and thus damage its proper function.
  • a knife edge 20 is indicated in FIG.
  • the wafer edge region 16 to be separated corresponds approximately to half the wall thickness d u w of the wafer not yet ground down. In the example mentioned here, the edge region has a width between 0.1 mm and 5 mm.
  • FIG. 2 now shows a semiconductor wafer 7 with an original thickness d u w of approximately 700 ⁇ m.
  • area 9 of its upper side 10 there is a large number of non-detailed electronic circuit units 22.
  • the electronic circuit units 22 are located directly on the surface of the wafer 7.
  • a peripheral furrow 13 is introduced with a guided in a liquid jet laser radiation.
  • the depth d ßf of the edge groove 13 is chosen so large that the groove bottom 15 is lower than the thickness de of the final wafer (layer 12). Subsequently, starting from the rear side 14 of the wafer 7, grinding is carried out until the predetermined residual wafer thickness de has been reached in accordance with the required thickness of the electronic circuit units. Since the edge groove 13 is deeper than the required thickness and has been ground beyond the groove bottom 15, the edge region 16 of the wafer 7 drops off. In the edge region 16 possibly resulting in thin loops microcracks, but this is unlikely because the forming blade has a significantly duller cutting angle than in the prior art, can not spread over the edge groove 13 in the rest of the wafer.
  • the outer edge of the wafer 1 is now the "inner" side wall 17 of the edge groove 13.
  • the edge region 16 already drops off here before a sharp knife edge 20 would form. Should any micro cracks from the blunt Form outgoing edge, so they would have a significantly longer way to penetrate to the semiconductor switching elements.
  • a chip produced according to this method has virtually no microcracks due to the thinning process.
  • a probability of breakage, caused by defects is given by the characteristic Weibull strength or by the Weibull modulus.
  • a dimensionless number p s is used to characterize the fluctuations of measured strength values in brittle or brittle materials with defects, cracks, weak points, etc.
  • p s indicates a "survival probability" with which an element having the volume Vo withstands an applied mechanical bending stress ⁇ .
  • the thinned wafer is dug with laser radiation conducted in the liquid jet, the furrows having a depth of more than half the wafer thickness. Subsequently, the wafer is broken into chips.
  • FIG. 4 the characteristic Weibull strength for the above three methods A to C is shown.
  • the middle bar with index “2" indicates an average value, while the left and right bars (index "1" and "3") indicate a statistical confidence interval of 90%.
  • an average value C 2 of 810 MPa is achieved, while in methods A and B only average values A 2 and B 2 of 380 MPa or of 530 MPa are achieved.
  • the Weibull strength is thus about 50% higher than in the known processes.
  • the fact that the increased breaking strength in the case of laser radiation directed in the liquid jet compared with methods A and B is due to a significant reduction of impurities (which here can only be microcracks) is shown in FIG. 5.
  • the process according to the invention thus produces extremely few impurities in relation to the known processes.
  • the chip dicing method according to the invention and the edge dicing method according to the invention are not only better than the known methods; It permits even higher speeds for generating the separation or separation.
  • a "free” laser is understood to mean a laser steel which is not guided, ie it runs in air and is focused with a focusing lens onto a surface of a workpiece to be processed. From FIG. 6 it can be seen that the use of a laser beam guided in the liquid jet according to the above-mentioned specifications up to a wafer thickness of approximately 140 ⁇ m is the faster separation method. It should be mentioned here that with the free laser (ie with a laser beam not guided in a liquid jet) separate chips have a very small edge breakage, which should be explained by the penetration of thermally induced stresses and microcracks in the cut edges. In the case of a laser beam guided in the liquid jet, these thermally induced strains no longer occur.
  • the liquid jet intended for laser radiation guidance is allowed to run during the entire processing operation. Only the laser radiation is then switched on for material removal. As a result, a liquid layer is formed on the wafer.
  • This liquid layer must now be thick enough to prevent material ejected from the groove from settling on the wafer surface when the laser is turned on. However, it must once again be so thin that the laser radiation is scattered only minimally.
  • the laser radiation is coupled into the liquid jet, switched on or switched on. switches and then the laser beam guided in the liquid jet furrow forming in a relative movement over the wafer.
  • the above requirements for the optimum liquid layer are mutually exclusive.
  • the maximum permissible thickness of the liquid layer, which permits good transmission of the laser radiation is smaller than the minimum necessary thickness, so that the workpiece surface does not dry up in places and that out of the groove ejected material. If a liquid layer is to be produced which is sufficiently thick so that no deposits can form, a comparatively thick liquid jet must be generated, through which the laser radiation no longer transmits in a good beam configuration.
  • the liquid layer is selected to be sufficiently thin so that the laser radiation transmits with sufficient power, it is no longer ensured that the affected surface areas of the workpiece are always flushed with the liquid; possibly even such a thin beam with the required beam stability can not be produced.
  • the liquid layer is therefore advantageously produced in such a way that its thickness is not the same everywhere.
  • the liquid layer is produced in such a way that its thickness in a region around the processing location, referred to below as the working region, is smaller than its thickness outside the working range.
  • the thickness of the liquid layer in the working area is referred to below as the first thickness and the thickness of the liquid layer outside the working area as a second thickness.
  • the thickness of the liquid layer outside the working region is selected such that no region of the workpiece surface dries out and that no material particles in the liquid, partly liquid or solid state can penetrate the liquid layer. At the same time it is also ensured that on the Surface of the workpiece in the area in which it is processed, always a liquid layer is located, which cools the workpiece. Likewise, any vapors and odors that arise during the machining of the workpiece can be effectively bound.
  • the optical imaging conditions are not or only slightly affected or deteriorated by the small thickness of the liquid layer in the work area.
  • liquids such as, for example, oils, in particular oils from the silicone group, or liquids, as used in liquid fibers.
  • oils in particular oils from the silicone group
  • liquids as used in liquid fibers
  • the same liquid is used to produce the liquid layer as for the liquid jet into which the laser radiation is coupled.
  • Water is advantageously used, which is present practically everywhere, is cheap to purchase and, in contrast to oils, is generally to be regarded as environmentally neutral.
  • the water used for the production of the liquid layer can also be cleaned and / or deionized.
  • CO 2 carbon dioxide
  • an electrically conductive liquid such as electrically conductive water
  • an electrically conductive liquid such as electrically conductive water
  • the thickness of the liquid layer is preferably influenced by the fact that substances are added to the liquid which influence their surface tension, ie increase or decrease depending on the application.
  • the thickness of the liquid layer increases with an increase in the surface tension. Depending on the liquid used these are very different substances. When using water, for example, surfactants can be added to lower the surface tension.
  • the generation of the liquid layer can basically take place in various ways. This could be done, for example, by first producing a regularly thick layer whose thickness in the region of the processing location is e.g. is reduced by an air jet directed thereto. If the flow velocity and the pressure of the air jet are suitably selected, this displaces a part of the liquid at the operating point and in this way creates the thinner liquid layer in the working area. In this variant, however, the thin liquid layer thus produced may have irregularities, which may lead to an undesirably irregular machining of the workpiece. In addition, the liquid jet and thus the laser radiation coupled therein can be disturbed by such an air flow.
  • the liquid layer is produced with a first liquid feed device, for example a nozzle or a tube.
  • the liquid layer is produced in such a way that the liquid is applied to the workpiece in the vicinity of the processing location.
  • an applied liquid jet is spoken of in this context, whereby this term is intended to encompass individual liquid jets or a plurality of individual jets of any cross section. That Not only liquid jets with a circular cross-section should be understood by this term. Even liquid curtains, such as those produced by surge and fan nozzles, are to be subsumed under this term.
  • a second liquid supply device for example one or a plurality of nozzles, is used to produce the liquid layer.
  • the second liquid supply device is designed in such a way that a sluggish, regular liquid phase is formed on the surface of the workpiece. Layer of the second thickness is formed, wherein sluggish in this context means that this liquid layer flows, but that the flow rate is small.
  • Both liquid supply devices can be used both individually and in combination. If they are used individually, a uniformly thick layer of liquid is produced in most cases.
  • both diesstechnikszu Swissvorairesen be used simultaneously. That With the second liquid supply device, an inert liquid layer of the second thickness is produced, and at the same time a liquid jet is now applied to the workpiece with the first liquid supply device near the operating point, as just described, in order to increase the thickness of the liquid layer in the working region to reduce to the first thickness.
  • This liquid jet influences the flow behavior of the liquid layer in such a way that it flows faster in the working area than outside this area. This in turn reduces the height of the liquid layer in the work area, outside of which it remains substantially unaffected.
  • the properties of the liquid jet, in particular its angle of incidence on the wafer surface and its flow rate are now selected so that the flow behavior of the liquid layer is influenced such that the liquid in the processing location moves around the operating point and flows outside of this range.
  • pouring and flowing are well-defined in the hydrodynamics for liquids. They are related to the Froude number FR, which in the case of a flowing (flat) liquid is defined as the ratio of the flow velocity v of the liquid to the propagation velocity (wave velocity) c of gravity waves, i.
  • Surface waves on the liquid surface are related to the Froude number FR, which in the case of a flowing (flat) liquid is defined as the ratio of the flow velocity v of the liquid to the propagation velocity (wave velocity) c of gravity waves, i.
  • Surface waves on the liquid surface are related to the Froude number FR, which in the case of a flowing (flat) liquid is defined as the ratio of the flow velocity v of the liquid to the propagation velocity (wave velocity) c of gravity waves
  • the wave velocity c in turn can be expressed as the root of the product of the gravitational acceleration g and the liquid height h:
  • the liquid jet is generated in a Favor ⁇ th embodiment such that it at a flow rate of 20 ml / min to 500 ml / min, a diameter between 0.5 mm and 4 mm, wherein it is notebook ⁇ introduced from above at an angle of incidence between 45 ° and 90 ° to the liquid layer.
  • FIG. 1 shows a schematic test setup for determining a breaking force of a furrowed wafer
  • FIG. 2 shows a wafer which has not yet been thinned with furrow introduced in its edge region
  • Fig. 3 is a plan view of the top of an already thinned wafer whose
  • FIG. 4 shows the characteristic Weibull strength for wafers with different singulation methods
  • 5 shows the Weibull modulus of a wafer, processed with different separation methods analogous to FIG. 4,
  • FIG. 4 shows the characteristic Weibull strength for wafers with different singulation methods
  • Fig. 6 is a comparative illustration of the cutting speed of a wafer over the
  • Wafer thickness wherein the cuts have been made with a free UV laser steel, a diamond saw and with Nd: YAG laser radiation guided in the liquid jet,
  • FIG. 7 shows a diagrammatic representation of the introduction according to the invention of furors into a surface of a wafer which carries electronic circuit units
  • FIG. 8 shows an enlargement of the point of incidence of the liquid jet guiding the laser radiation during furrow formation.
  • FIG. 7 shows a device with which semiconductor wafers can be processed using the method according to the invention.
  • the wafer to be processed here bears the reference numeral 21.
  • the wafer edge regions (analogous to the edge regions 16 in FIG. 2) have already been removed by inserting into the thick wafer with a typical thickness d u w of, for example, 700 microns, as already described above, a Randfurche has been cut with a ge in a liquid jet led laser radiation.
  • the edge groove depth dR f has been chosen larger than the thickness de of the electronic circuit units 22 carry the layer 23 (analogous to the layer 12 in Figure 2). After the 700 ⁇ m thick layer has been abraded to the layer thickness de shown in FIG.
  • a knife edge 20, which generally generates microcracks, has not been formed in accordance with the above embodiment, since the edge region 16 has already fallen off.
  • the introduction of the edge furrow, not shown in Figure 7 is analogous to the method shown below feasible.
  • the now thinned wafer 21 is held on a support 24.
  • the wafer 21 is held, for example, by a pressure difference above and below the carrier 24 on this sem. Above the carrier 24, for example, the ambient or atmospheric pressure prevails. Below the carrier 24 a more or less strong negative pressure is generated. Since the carrier 24 contains an adhesive layer, the wafer 21 is held on its surface.
  • these separating slots 25 are introduced along the unit edges analogously to the edge grooves 19 already mentioned above.
  • the separation furrows, as well as the edge grooves 19, are produced by means of a liquid jet 27 guided correspondingly over the wafer surface, in the interior of which the radiation 29 of a laser is passed in analogy to a radiation conductor (light guide).
  • the laser radiation fills the entire liquid cross section of the liquid jet 27.
  • the laser radiation in the liquid jet is drawn schematically (not quite correctly, but then clearly recognizable) as line 29. As a liquid you will usually use water, but this is not mandatory in view of the comments made at the outset.
  • the wafer 21 held on the carrier 24 can be moved relative to the liquid jet conducting the laser radiation. Also, the laser radiation and the liquid jet is briefly switched on and off. The laser power is coupled in the area of a nozzle forming the liquid jet. The liquid jet conducting the laser radiation flows out in the nozzle axis.
  • the furrow width depends on the laser energy used and the diameter of the liquid jet generated.
  • the furrow width is a few tens of microns and is here about 45 microns.
  • To generate the laser radiation for example a 50 kHz pulsed Nd: YAG laser with an average power of 80 W has been used.
  • Nozzle axis and wafer 21 are now aligned relative to each other so that the nozzle axis hits a processing location 31, which is the initial location of a separation between see two electronic circuit units 22 and two rows of elements. Starting from this initial location, the wafer and the nozzle axis are then moved in the direction of a groove to be produced; the initial location is thus the beginning of the furrow. At the initial location, it is now possible to proceed differently for the production of furrows.
  • the nozzle axis or the wafer are moved relative to one another in such a way that the nozzle axis always hits the relevant material ablation location.
  • the liquid jet always remains switched on, only the laser radiation is switched according to the matrial ablation to be carried out.
  • the laser radiation then removes the wafer material to form the groove and rinses away the removed material with the liquid of the liquid jet.
  • the liquid cools the ablation areas. Surrounding material is thus subjected to extremely low thermal stress. This low thermal stress is responsible for the fact that virtually no micro-cracks develop, which could propagate in the electronic circuit units 22.
  • the liquid jet thus forms a thin liquid film at the processing location, which is advantageous for material removal of the furrow material.
  • a liquid layer 34 is produced, which is thinner in a region around the operating point 31, the so-called working region 35, than outside the working region 35.
  • the liquid layer 34 in the working region 35 is subsequently referred to as the working layer 37 Thickness 39 and that portion of the liquid layer 34 outside the working area 35 is referred to as a rinsing layer 40 with a thickness 41.
  • the liquid layer 34 of different thicknesses can now be produced with the liquid of the liquid jet 27, but it is preferable to provide a further liquid feed, which is indicated here by the liquid jet 43, for example.
  • the liquid jet 43 is applied to the wafer surface 33 in the vicinity of the processing location 31 in the work area 35.
  • a distance 44 of the place of impact 45 of the liquid jet 43 to the processing site 31 must not be too large or too small. However, the bandwidth of a selection tolerance is quite large. It is usually only necessary to ensure that the processing location 31 is within the working area 35, ie within the area of the liquid layer 37 with the thickness 39. It should be noted, however, that a relative rate of furrow formation affects the choice of distance 44.
  • the flow of the applied liquid is indicated by the arrows.
  • a Aufwreffwin ⁇ angle 47 and the flow rate of the liquid jet 43 can be varied. They are selected such that the liquid in the working layer 37 is moving (Froude number greater than 1) and flowing in the flushing layer 40 (Froude number less than 1) moves, the transition from the working layer 37 to the flushing layer 40 more or less leaps and bounds.
  • the distance 44 is selected in the range of approximately 5 mm to 50 mm.
  • the liquid jet 43 has a diameter between 0.5 mm and 4 mm. With an angle of incidence 47 between 45 ° and 90 ° and a flow rate of the liquid jet 40 between 20 ml / min and 500 ml / min, the thickness 39 of the working layer 37 is in the range of 0.01 mm to 0.5 mm and the thickness 41 of Rinsing layer 40 in the range of 0.5 mm to 5 mm.
  • FIG. 8 shows an enlarged detail around the processing location 31.
  • the guided in the liquid jet 27 laser radiation 29 fills the entire beam, which is indicated by dashed lines.
  • the laser radiation 29 penetrates the working layer 37, strikes the surface 33 of the wafer 21 at locations for the predetermined generation of fur and causes a material removal.
  • small particles 49 form, which are then immediately cooled and washed away by the flowing working layer 37.
  • particles 49 are prevented from settling on the surface 33 of the wafer 21 and reconnecting to the wafer 21 there.
  • These particles 49 are washed away from the working layer 37 to the rinsing layer 40 and from the latter from the wafer 21.
  • the selected thickness 41 of the rinsing layer 40 ensures that no area of the wafer surface dries up, but is always covered with a layer of the liquid; Settling of particles no 49 also in the outer region of the wafer 21 has thus been effectively prevented.
  • the result is a one hundred percent pure surface 33 of the wafer 21.
  • the liquid jet 27 entrains air on its surface.
  • the entrained by the liquid jet 27 air is indicated by arrows 51.
  • this entrained air displaces part of the liquid of this layer 37 around the working point 31 so that the liquid jet 27 is quasi prolonged.
  • the liquid jet 27 protrudes, as it were, into the working area 37 and extends almost to the workpiece surface. 33 down. As a result, the laser radiation can be guided longer in the liquid jet 27, which results in lower energy losses of the laser radiation.
  • liquid feeds can be provided, which are preferably carried out in the regions of the rinsing layer 40.
  • the liquid applied to the wafer drains from its edges and is collected there.

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  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention concerne un procédé pour séparer des unités électroniques de type circuits (puces) (22) qui sont disposées sur une plaquette en semi-conducteur (21). Selon ce procédé, une rainure périphérique est ménagée à une distance du bord de la plaquette en semi-conducteur. Cette rainure périphérique empêche la progression de fissures dans les unités de type circuits (22). La plaquette (7) est ensuite meulée de manière que son épaisseur soit identique à celle des unités de type circuits, ce qui réduit la zone se trouvant entre la rainure périphérique et le bord de la plaquette en semi-conducteur. Dans la phase préalable de la séparation, une rainure de séparation (13 ; 25) qui ne coupe pas la plaquette amincie est respectivement ménagée sur les bords des unités de type circuits ou entre des unités de type circuits adjacentes, avec ou sans séparation préalable dans la zone du bord de la plaquette, à partir de la surface (9 ; 33) de la plaquette (1 ; 7 ; 21) qui supporte des unités de type circuits, selon un tracé de ligne prédéterminé, au moyen d'un rayonnement laser (29) guidé par un jet liquide (27). La matière de plaquette est enlevée par l'énergie de rayonnement pour former la rainure, et les parois latérales de rainure (17) ainsi formées sont fortement refroidies par le liquide du jet liquide (27), ce qui permet simplement de former une zone de bord de rainure soumise à des contraintes thermiques qui est extrêmement petite. Pendant la formation des rainures, aucune microfissure ou un nombre très réduit (pratiquement pas) de microfissures sont formées dans les parois latérales (17) des rainures ou s'étendent à partir desdites parois latérales. Au cours d'une étape d'usinage suivante, les unités de type circuits sont séparées par application d'une tension de flexion à la rupture.
PCT/CH2005/000451 2004-07-30 2005-07-29 Procede pour separer des unites electroniques de type circuits (puces) qui sont disposees sur une plaquette en semi-conducteur WO2006010289A2 (fr)

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US9260337B2 (en) 2014-01-09 2016-02-16 Corning Incorporated Methods and apparatus for free-shape cutting of flexible thin glass
CN110691671A (zh) * 2017-04-20 2020-01-14 西尔特克特拉有限责任公司 用于具有限定地定向的改性线的晶片制造的方法
WO2021152020A1 (fr) * 2020-01-31 2021-08-05 SMART Photonics Holding B.V. Traitement d'une tranche d'un matériau semi-conducteur
CN114985024A (zh) * 2022-05-19 2022-09-02 广州大学 一种自适应热流控芯片及其制造方法
DE112013007505B4 (de) 2013-10-15 2023-06-07 Mitsubishi Electric Corporation Halbleiterelement-Fertigungsverfahren

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112013007505B4 (de) 2013-10-15 2023-06-07 Mitsubishi Electric Corporation Halbleiterelement-Fertigungsverfahren
US9260337B2 (en) 2014-01-09 2016-02-16 Corning Incorporated Methods and apparatus for free-shape cutting of flexible thin glass
US9624121B2 (en) 2014-01-09 2017-04-18 Corning Incorporated Methods and apparatus for free-shape cutting of flexible thin glass
CN110691671A (zh) * 2017-04-20 2020-01-14 西尔特克特拉有限责任公司 用于具有限定地定向的改性线的晶片制造的方法
CN110691671B (zh) * 2017-04-20 2023-10-10 西尔特克特拉有限责任公司 用于具有限定地定向的改性线的晶片制造的方法
US11869810B2 (en) 2017-04-20 2024-01-09 Siltectra Gmbh Method for reducing the thickness of solid-state layers provided with components
WO2021152020A1 (fr) * 2020-01-31 2021-08-05 SMART Photonics Holding B.V. Traitement d'une tranche d'un matériau semi-conducteur
CN114985024A (zh) * 2022-05-19 2022-09-02 广州大学 一种自适应热流控芯片及其制造方法

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