WO2006008747A2 - Inducteur sur puce - Google Patents

Inducteur sur puce Download PDF

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Publication number
WO2006008747A2
WO2006008747A2 PCT/IL2005/000781 IL2005000781W WO2006008747A2 WO 2006008747 A2 WO2006008747 A2 WO 2006008747A2 IL 2005000781 W IL2005000781 W IL 2005000781W WO 2006008747 A2 WO2006008747 A2 WO 2006008747A2
Authority
WO
WIPO (PCT)
Prior art keywords
inductor
layer
conducting strip
strip
ferromagnetic material
Prior art date
Application number
PCT/IL2005/000781
Other languages
English (en)
Other versions
WO2006008747A3 (fr
Inventor
Amikam Nemirovsky
Original Assignee
Bluebird Optical Mems Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bluebird Optical Mems Ltd. filed Critical Bluebird Optical Mems Ltd.
Publication of WO2006008747A2 publication Critical patent/WO2006008747A2/fr
Publication of WO2006008747A3 publication Critical patent/WO2006008747A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/13—Amorphous metallic alloys, e.g. glassy metals
    • H01F10/138—Amorphous metallic alloys, e.g. glassy metals containing nanocrystallites, e.g. obtained by annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H01F41/046—Printed circuit coils structurally combined with ferromagnetic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/04—Fixed inductances of the signal type  with magnetic core
    • H01F17/06—Fixed inductances of the signal type  with magnetic core with core substantially closed in itself, e.g. toroid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F2017/008—Electric or magnetic shielding of printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates generally to on-chip inductors and more particularly to on- chip inductors capable of operating at very high frequencies.
  • An inductor is typically produced of a coil and in many occasions is produced around a core made of a high permeability material.
  • the inductor is a passive electrical component that generates between its contacts a voltage that is proportional to the instantaneous rate of change in current flowing between the contacts.
  • An inductor is measured by its inductance value, measured in Henry (H).
  • H Henry
  • the current flowing through an inductor produces an electromagnetic field that can be calculated from Maxwell's equations.
  • the inductance of the inductor usually denoted by an "L" symbol, defines the proportion between the voltage generated in the inductor arid the time derivative of the current, 1, flowing through the inductor.
  • the quality factor, Q of a system, is defined as the maximal energy stored in the system when exited by a pure harmonic input, multiplied by the exiting angular frequency and divided by the average power dissipated in the system.
  • Q quality factor
  • RF radio frequency
  • a prior art spiral like inductor 100 known in the art is comprised of a conducting strip 110 formed as a coil having 2.5 turns, the conducting strip having a width "W" and a space “S” between turns.
  • Inductor 100 is further comprised of segment 120, where segment 120 is connected- to conducting strip 110 by a "via" hole in the area of overlap 130.
  • segment 120 and the connecting "via" it is obvious that a spiral shaped inductor necessarily implies a three dimensional structure rather than a simpler planar structure, as segment 120 must be electrically isolated from the turns and thus must be implemented in a different layer.
  • inductors having an inductance level in the range of 1- 40 nano-Henry (nH) and a Q-factor, in the GHz frequency range, of the order of five for complementary metal-oxide semiconductor (CMOS) implementations and of the order often for bipolar CMOS (BiCMOS) processes.
  • CMOS complementary metal-oxide semiconductor
  • BiCMOS bipolar CMOS
  • Fukuda et al. in their paper "Planar Inductor with Ferrite Layers for DC- DC Converter” suggest a spiral shaped "planar” inductor (a planar spiral indeed, although that together with its electrical connections the whole structure must be implemented as a strictly three dimensional structure, because of reasons explained above). Fukuda et al. suggest to completely coat the spiral structure with bottom and upper layers made of a material containing a ferrite, intended to enhance both Q factor and the inductance L of the inductor. The inductor proposed by Fukuda et al. is intended for implementation of on-chip purposes and for use in the frequency range of up to five mega Hertz. Fukuda et al. were able to show a maximum Q-factor of 40 at that frequency range and have shown it to decrease as frequency was increased above that range.
  • FIG. 2 is an exemplary implementation of a prior art on-chip 3D inductor.
  • Device 200 comprising an inductor is composed of conducting strips 230 and conducting strips 240 formed, respectively, on surfaces 210 and 220 of device 200.
  • Conducting strips 230 and conducting strips 240 are connected through metal filled "via" holes 250 and together form a 3D structure of a coil, noted above as being typical of an implementation of an inductor.
  • these inductors are created around a ferromagnetic and electrically non- conductive core, intended to enhance both the inductance L and the Q factor of the inductors.
  • 3D inductors save on IC area.
  • production of such inductors is very complicated and expensive as compared to strictly planar inductors.
  • 3D design inductors also suffer from a low Q factor and a low inductance level, similar to their 2D inductor counter-parts.
  • an inductor integrated onto an integrated circuit comprising: a first layer of an electrically highly resistive, high permeability soft ferromagnetic material , deposited on a surface of the IC; an electrically conducting strip made of a highly conducting material, the strip formed on top of the first layer and having electrical contacts formed at both ends of the strip, wherein the strip and the contacts are not intersecting or self-intersecting; and a second layer of an electrically highly resistive, high permeability soft ferromagnetic material, deposited over the strip and at least partly over the first layer, such that the strip is entirely covered by a non-conducting and high permeability soft ferromagnetic material, of either the first layer or the second layer.
  • the surface of an IC is one of a plurality of layers of the IC.
  • a relative permeability of the high permeability soft ferromagnetic material is over 50.
  • the highly resistive, high permeability soft ferromagnetic material is composed of Fe-Co-X-N wherein X may be any one of: Ta, Cu, Ta-Si, Cu-Si, or Si.
  • the inductor has a Q-factor of above one hundred.
  • the electrically highly resistive and high permeability soft ferromagnetic material is composed of materials at least one of which is a ferrite.
  • the conducting strip is formed in a planar shape forming one of: a U-shape, a rectangular shape, a meander-shape.
  • At least a portion of the second layer is removed from over the conducting strip for the purpose of post-processing trimming.
  • the removal of the portion of the second layer is performed by a laser. In accordance with yet another embodiment of the present invention, the removal of the portion of the second layer is performed symmetrically at the proximities of the electrical contacts.
  • a thickness of the first layer and the second layer is at least one micrometer.
  • the thickness of the first layer and the second layer is less than one micrometer.
  • the conducting strip is made of at least one of: gold, aluminum, copper, platinum.
  • the electrical contacts are located so as to enable essential nullification of electromagnetic interference to a surrounding.
  • Fig. 1 is an exemplary implementation of a prior art on-chip 2D inductor
  • Fig. 2 is an exemplary implementation of a prior art on-chip 3D inductor
  • Fig. 3A is an exemplary linear U-shaped inductor designed in accordance with a first embodiment of the present invention
  • Fig. 3B is an exemplary linear square-shaped inductor designed in accordance with a second embodiment of the present invention.
  • Fig. 4 is a cross-section of the linear square-shaped inductor design of Fig. 3B, in accordance with the present invention
  • - D - Fig. 5 is a simulation of the current density in the cross-section of the inductor's conducting strip and the magnetic flux in the coating around the inductor's conducting strip at a frequency of 0.1 giga Hertz;
  • Fig. 6 is a simulation of the current density in a cross section of the inductor's conducting strip and the magnetic flux in the coating around the inductor's conducting strip, at a frequency of 5 giga Hertz;
  • Fig. 7 is an exemplary meander-shaped inductor designed in accordance with a third embodiment of the present invention. ' r
  • Fig. 8 is a cross-section of the meander-shaped inductor design of Fig. 7 in accordance with the present invention.
  • Fig. 9 is a simulation of the current density in a cross section of the meander-shaped inductor's conducting strip and the magnetic flux in the coating around the inductor's conducting strip, at a frequency of 2.4 giga Hertz;
  • Fig. 10 is an exemplary linear U-shaped inductor with trimming in accordance with a fourth embodiment of the present invention.
  • the present invention overcomes limitations of prior art solutions by providing a high Q value for an on-chip inductor.
  • Providing a high Q factor value is achieved by coating a linear shaped conductor with an electrically highly resistive, soft ferromagnetic material having a high permeability, for example, nano-crysrallines containing Fe-Co-X-N, where X may be, for example, any one of Ta, Cu, Ta-Si, Cu-Si, or Si.
  • the geometrical design of the inductor does not require turns or spirals and can, in fact, assume almost any geometrical form as may be convenient for production or for on-chip layout.
  • the present invention does not make such a requirement on the design of the inductor. Specifically, the present invention enables the two ends of the conducting strip composing the inductor to be placed close by and in parallel to each other, i.e. at the same layer of the integrated circuit.
  • the preferred embodiments of the present invention allow access to the inductor at the same layer where the inductor is realized. Furthermore, the electromagnetic fields at the exit of the inductor essentially cancel each other, thus significantly reducing the electromagnetic interference caused in prior art implementations, where the entry to the inductor is at a significantly different location than the exit thereof.
  • the proposed inductor in accordance with the present invention, posses Q values of well-over fifty, typically having values exceeding one hundred, and an inductance level of over twenty-five nano-Henry per millimeter length, at frequencies of over one giga-Hertz. Moreover, the process used for manufacturing is suitable for post-processing of standard manufacturing technology.
  • Fig. 3A where an exemplary and non-limiting planar inductor having a U-shape
  • Fig. 3B where an exemplary and non-limiting planar inductor having a square-shape, both designed in accordance with a first and a second embodiment of the present invention, are respectively shown.
  • the proposed inductors are implemented on IC 300A and IC 300B, respectively.
  • a cross-section A-A of the IC for example IC 300B, is shown in Fig. 4.
  • a bottom layer 340-B of electrically highly resistive, soft ferromagnetic material having a high permeability is deposited on top of an IC surface 310 .
  • a minimal thickness of such a bottom layer 340-B is typically less than one micrometer (micron), but may reach up to several microns.
  • Layer 340-B may be made of, but not limited to, a nano-crystaline material containing Fe-Co- X-N, where X may be, for example, any one of Ta, Cu, Ta-Si, Cu-Si, or Si.
  • the conducting strip 320 may be formed in a linear shape or in a variety of other shapes, for example a U- shape or a meander shape.
  • the conducting strip has two ends 330 and 335 that form the electrical contacts to other network elements.
  • Conducting strip 320 is formed of a highly conducting material, including but not limited to metals like gold, copper or platinum.
  • the conducting strip is formed by using, for example, patterning techniques (etching, lift-off, molding or other) commonly used in semiconductor manufacturing.
  • the conducting strip is now coated with a top layer 340-T of an electrically highly resistive, soft ferromagnetic material having a high permeability.
  • the two ferromagnetic layers 340-B and 340-T cover and surround the conducting strip completely. Hence, when the two layers are thick enough, most of the electromagnetic energy associated with an electrical current flowing in the conducting strip 320 is trapped inside layers 340-T and 340-B.
  • Energy losses in layers 340-B and 340-T depend on the specific electrical conductivities of the materials comprising the two layers. The choice of electrically highly resistive materials is essential for low energy losses.
  • Layer 340-T may be made of, but is not limited to, nano-crystaline material containing Fe-Co-X-N, where X may be, for example, any one of Ta, Cu, Ta-Si, Cu-Si, or Si.
  • a minimal thickness of such a top layer 340-T is typically one micron or less, and may reach up to several microns.
  • Ends 330 and 335 may be placed such that the electrical connections of the inductor to other network elements are in proximity and are implemented parallel to each other, thereby ensuring that interference electromagnetic fields caused outside the inductor are essentially nullified.
  • a copper conductor having a cross section of fifteen-by-fifteen micrometers and a two micron thick coating, wherein the two micron thick coating is made of a soli ferromagnetic material having a relative permeability of 600 and a specific electrical resistivity of 10 ohm-cm, results in a Q-factor exceeding four hundred, at 1.842 giga Hertz (1,842 mega Hertz). This is due to the magnetic flux trapping that takes place in coating layers 340-B and 340-T, completely coating conducting strip 320.
  • Fig. 5 is a simulation of the current density in the cross-section of the inductor's conducting strip and the magnetic flux in the coating around the inductor's conducting strip, at driving frequency of 0.1 giga Hertz. For this driving frequency the current density is practically uniform over the cross section of conducting strip 320.
  • the magnetic flux lines, lying in planes in a locally lateral manner to the conductor, are essentially trapped in the volume of the ferromagnetic coating surrounding the conducting strip. As a result, the effects discussed above are obtained.
  • Fig. 6 is a simulation of the current density in a cross section of the inductor's conducting strip and the magnetic flux in the coating around the inductor's conducting strip, at a driving frequency of 5 giga Hertz. At this driving frequency the current density is significantly higher at the outer sharp edges of the conducting strip than at the vicinity of the center of the conducting strip cross section (this is known as "skin effect"). Yet, the essential trapping of the magnetic flux remains in effect.
  • Manufacturing of a planar inductor fits well within the process flows of standard semiconductor manufacturing.
  • the standard manufacturing processing is carried out by adding either post-processing or in process of deposition of the ferromagnetic layers 340-B and 340-T.
  • a first layer 340-B of electrically highly resistive, high-permeability soft ferromagnetic material is deposited.
  • a highly conductive metal layer is then deposited on top of the first layer, patterned, and etched as normally performed in semiconductor manufacturing known in the art, such that a conducting strip having the desired geometrical form is obtained.
  • the conducting strip of the inductor is formed to comply with the restrictions discussed above, and more specifically, no self-intersecting of the conducting strip is permitted. There is no requirement to move to a different layer in order to complete the design of the inductor, or to be able to access it electrically. Thereafter at least the area of the inductor is coated with a second layer 340-T of an electrically highly resistive soft ferromagnetic material having a high permeability, where the electrical high resistivity is required to minimize eddy currents loss of power in the coating layers. Thereon, the process continues as is customary for standard semiconductor manufacturing. A typical thickness of first layer 340-B and second layer 340-T is one micron or less, but may reach higher values, depending on the nature of the coating materials and range of frequencies.
  • a U-shaped inductor may well provide an adequate solution, however, there may be cases where higher inductance per unit area is necessary. This may be achieved by taking advantage of the fact that the total inductance is proportional to the length of the conducting strip covered by the ferromagnetic layers.
  • Fig. 7 where an exemplary and non-limiting meander-shaped conducting strip 720, designed in accordance with a third implementation of the present invention on IC 700, is shown.
  • Fig. 8 where a cross-section A-A of IC 700 is shown.
  • the inductor comprises a layer 740-B of an electrically highly resistive, soft ferromagnetic material having a high permeability, which is deposited over surface 710.
  • a conducting strip 720 is formed in a meander shape, composed of an even number of parallel sections, where the two ends 730 and 735 of the conducting strip are placed such that they run close and parallel to each other.
  • the use of the meander shape provides for relatively high inductance per unit IC area and also for the requirement not to have any serf-intersecting point in conducting strip 720, thus avoiding any need to move to a higher or lower layer of IC 700.
  • a meander shaped inductor is with respect to the further suppression of electromagnetic leakage. This is due to the fact that the electrical current flowing in any two adjacent sections of the meander generates magnetic fields that are equal in magnitude but reverse in direction. If the meander is composed of an even number of sections, then the magnetic fields generated by all the sections, at distances relatively far from the meander inductor, tend to cancel each other, thus reducing the electromagnetic leakage, or interference, to the environment.
  • conducting strip 720 is coated by a second layer 740-T of an electrically highly resistive, high permeability soft ferromagnetic material, so that conducting strip 720 is completely everywhere covered by either one of the two ferromagnetic layers.
  • a ferromagnetic layer may be made of, or contain, a nano-crystaline material containing Fe-Co-X-N, where X may be, for example, any one of Ta, Cu, Ta-Si, Cu-Si, or Si.
  • processing of IC 700 may continue in accordance with standard semiconductor manufacturing technologies and processes.
  • the manufacturing processes of the meander shaped inductor are similar to those explained above.
  • the inductance per unit length of such a meander shaped inductor may come close to twenty-five nano-Henry per millimeter, wherein the inductance per unit area may come close to one micro-Henry per square millimeter. This happens due to the magnetic flux trapping that occurs in the coating layers 740-B and 740-T, completely coating conducting strip 720.
  • Fig. 9 shows a simulation of the current density in a cross section of the meander-shaped inductor's conducting strip and the magnetic flux in the coating around the inductor's conducting strip, at a frequency of 2.4 giga Hertz.
  • the frequency of operation is 2.4 giga-Hertz the current density is significantly higher at the sharp edges of the cross section of meander-shaped conducting strip 720 than the current density at the center of the cross section of conducting strip 720.
  • U-shaped conducting strip 320 is deposited upon a layer 340-B, the layer made of an electrically highly resistive, soft ferromagnetic material having a high permeability. Conducting strip 320 is then covered by a deposited layer 340-T of highly resistive soft ferromagnetic material having a high permeability.
  • U-shaped inductor If it is necessary to trim the value of U-shaped inductor, then it is desirable to expose at least a portion, such as exposure area 1010, of the conducting strip 320, from electrically highly resistive, soft ferromagnetic material having a high permeability layer 340-T. Such an exposure can be performed by, but is not limited to, a laser. Once exposed, there is an impact on the inductance of the inductor proportional to the length of conducting strip exposed. There may further be a small degradation of the value of Q of the inductor. However, due to the very high Q values of inductors manufactured according to the present invention, such degradation is relatively small and the inductor will still have a high Q value.
  • the areas exposed at the proximities of the electrical contacts of the inductor are equal and symmetrical at both ends. This is to ensure minimization of interference electromagnetic fields caused outside the inductor, discussed in more detail above.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)

Abstract

La présente invention se rapporte à un inducteur et à un procédé de fabrication associé permettant d'obtenir des inducteurs sur puce intégrés de très petite taille, présentant des valeurs de facteur de qualité (Q) élevées, ainsi qu'une géométrie simple et à un niveau. Le procédé selon l'invention consiste à revêtir complètement une bande conductrice d'une matière ferromagnétique douce à forte résistivité électrique et dotée d'une perméabilité élevée. Une telle matière peut être une matière nanocristalline contenant Fe-Co-X-N, où X peut représenter, par exemple, Ta, Cu, Ta-Si, Cu-Si ou Si. La dimension linéaire de l'inducteur, la perméabilité de son revêtement, sa résistivité électrique et son épaisseur permettent d'obtenir des valeurs Q largement supérieures à 50 à des fréquences dépassant 1 gigahertz, et des valeurs d'inductance de plusieurs dizaines de nanohenry par millimètre sur la longueur de l'inducteur.
PCT/IL2005/000781 2004-07-22 2005-07-21 Inducteur sur puce WO2006008747A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US59059104P 2004-07-22 2004-07-22
US60/590,591 2004-07-22

Publications (2)

Publication Number Publication Date
WO2006008747A2 true WO2006008747A2 (fr) 2006-01-26
WO2006008747A3 WO2006008747A3 (fr) 2006-03-16

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010049648A1 (fr) 2008-10-28 2010-05-06 Pac Vending Dispositif de conservation, de cuisson et de distribution automatique de produits a base de pate, notamment de pains
EP3238086A4 (fr) * 2014-12-24 2018-09-05 Intel Corporation Multiplexage d'émetteurs-récepteurs via des interconnexions usb de type c
WO2021112991A1 (fr) * 2019-12-06 2021-06-10 Lam Research Corporation Supports de substrat dotés de filtres rf intégrés

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227659A (en) * 1990-06-08 1993-07-13 Trustees Of Boston University Integrated circuit inductor
US20020005565A1 (en) * 1999-02-03 2002-01-17 Micron Technology, Inc. Inductor with magnetic material layers
US20020177013A1 (en) * 2000-09-11 2002-11-28 Masayoshi Hiramoto Magnetoresistive element, method for manufacturing the same, and method for forming a compound magnetic thin film
US20040103522A1 (en) * 1999-02-26 2004-06-03 Micron Technology, Inc. Open pattern inductor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227659A (en) * 1990-06-08 1993-07-13 Trustees Of Boston University Integrated circuit inductor
US20020005565A1 (en) * 1999-02-03 2002-01-17 Micron Technology, Inc. Inductor with magnetic material layers
US20040103522A1 (en) * 1999-02-26 2004-06-03 Micron Technology, Inc. Open pattern inductor
US20020177013A1 (en) * 2000-09-11 2002-11-28 Masayoshi Hiramoto Magnetoresistive element, method for manufacturing the same, and method for forming a compound magnetic thin film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010049648A1 (fr) 2008-10-28 2010-05-06 Pac Vending Dispositif de conservation, de cuisson et de distribution automatique de produits a base de pate, notamment de pains
EP3238086A4 (fr) * 2014-12-24 2018-09-05 Intel Corporation Multiplexage d'émetteurs-récepteurs via des interconnexions usb de type c
WO2021112991A1 (fr) * 2019-12-06 2021-06-10 Lam Research Corporation Supports de substrat dotés de filtres rf intégrés
CN114761616A (zh) * 2019-12-06 2022-07-15 朗姆研究公司 具有集成式rf滤波器的衬底支撑件

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