WO2006004835A2 - Semiconductor laser with side mode suppression - Google Patents
Semiconductor laser with side mode suppression Download PDFInfo
- Publication number
- WO2006004835A2 WO2006004835A2 PCT/US2005/023102 US2005023102W WO2006004835A2 WO 2006004835 A2 WO2006004835 A2 WO 2006004835A2 US 2005023102 W US2005023102 W US 2005023102W WO 2006004835 A2 WO2006004835 A2 WO 2006004835A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- waveguide layer
- active region
- layer
- laser
- semiconductor laser
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0655—Single transverse or lateral mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/204—Strongly index guided structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
Definitions
- Lasers are some of the primary components of optical networks. They are often used, for example, in optical transceivers to generate the optical signals that are transmitted over an optical network. Lasers are also used to pump various types of optical amplifiers, such as Raman amplifiers and erbium-doped amplifiers.
- Figure 4 illustrates yet another embodiment of the waveguide layer used to reduce side-mode suppression ratio
- Figure 5A illustrates a plot of the modal index of the waveguide layer for a primary mode and a secondary optical mode with respect to the modal index of the active region as a function of wavelength
- the ability of a semiconductor laser to generate a particular mode while suppressing or filtering other modes may be quantified using a side-mode suppression ratio (SMSR).
- SMSR side-mode suppression ratio
- the SMSR may determine how well a second order mode (or other mode) is suppressed relative to the main or primary mode of the laser.
- Figure 1 illustrates a plot of a primary mode and a secondary mode of a semiconductor laser.
- the plot 100 illustrates a primary mode 102.
- the primary mode 102 corresponds to a longitudinal mode and is emitted, in this example, at a wavelength of about 1310 nanometers.
- This example illustrates the onset of a secondary mode 104 that is to the shorter wavelength side or blue side of the primary mode 102.
- a secondary mode in systems such as WDM systems can induce crosstalk as well as chromatic dispersion.
- FIG. 2A illustrates one embodiment of the present invention to reduce the second order mode.
- the laser 200 includes a substrate 212 with various layers arranged over the substrate 212.
- an n-type semiconductor layer 210 is arranged over the substrate 212 and the active region 204 is arranged over the semiconductor layer 210.
- a p type semiconductor layer 208 is arranged or formed over the active region 204.
- the laser 200 may be a DFB or a DBR laser, for example, and the laser 200 may also include a grating 206. After the grating 206 is etched and defined, InP or other suitable material may be regrown and the laser is then fabricated using a standard ridge waveguide process. The grating 206 serves as the etch stop layer during the ridge waveguide process.
- the active region 204 is effectively located at a pn junction.
- the active region 204 includes a multi-quantum well structure.
- the material system of the quantum wells is InGaAlAs in this example.
- the active region 204 may include 6 quantum wells interleaved with 7 barrier layers, although one of skill in the art can appreciate that the invention may be implemented using more or fewer quantum wells and that other materials may be used in the quantum wells.
- Each quantum well may have a thickness on the order of 5 nm while the barrier layers may each have a thickness on the order of 8.5 nm.
- the barrier layers and/or the quantum wells are tensile strained or compressive strained.
- the quantum wells are compressive strained and the barrier layers and tensile strained.
- the photoluminescence of the active region 204 in this example is on the order of 1300 nm.
- Figure 2B illustrates one embodiment of an active region 204. More particularly in Figure 2B, the active region 204 may also include graded index separate confinement heterostructure (GRINSCH) layers 222, 226.
- GRINSCH graded index separate confinement heterostructure
- the laser 200 also includes a waveguide layer 202 as illustrated in Figure 2.
- the waveguide layer is typically formed beneath the active region 204.
- the waveguide may be InGaAsP lattice matched to InP.
- the specific composition or other parameters of the waveguide layer 202 can be altered as described below to improve the SMSR.
- Figures 3 and 4 illustrate alternative embodiments of the invention.
- the waveguide layer 302 of the laser 300 includes multiple layers. In one embodiment, the multiple layers in the waveguide layer 302 are distributed Bragg layers.
- Figure 4 illustrates a laser array 400.
- a ridge waveguide structure 401 is formed laterally adjacent to a ridge waveguide structure 403.
- the structure 402 includes a waveguide layer 402 that can optically couple with the active region 404 of the structure 403.
- the waveguide layer 402 is located sufficiently near the active region 403 for optical coupling to occur.
- the laser 200 may support a second order mode that can lead to the SMSR failure previously described.
- the speed of light (or the phase velocity) in the waveguide layer approaches the phase velocity of the second order mode.
- the second order mode couples with the waveguide layer 202.
- the waveguide layer may have a thickness of about 115 nanometers and have a photoluminescence peak of about 1200 nanometers.
- Figure 5A plots the modal index (phase velocity) of a mode of the waveguide structure as well as the modal index of the modes of the active region as a function of wavelength.
- the strength of coupling between the waveguide layer and the active region modes can be either wavelength dependent or wavelength independent.
- the waveguide layer is typically configured such that the modal index curve illustrated in Figure 5A is approximately parallel to the curve of the active region. When the curve of the waveguide layer is substantially parallel to the curve of the active region, the optical coupling is wavelength independent.
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05856164.8A EP1766739B1 (en) | 2004-06-30 | 2005-06-30 | Semiconductor laser with side mode suppression |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/880,655 US7649916B2 (en) | 2004-06-30 | 2004-06-30 | Semiconductor laser with side mode suppression |
US10/880,655 | 2004-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006004835A2 true WO2006004835A2 (en) | 2006-01-12 |
WO2006004835A3 WO2006004835A3 (en) | 2007-08-02 |
Family
ID=35513874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/023102 WO2006004835A2 (en) | 2004-06-30 | 2005-06-30 | Semiconductor laser with side mode suppression |
Country Status (4)
Country | Link |
---|---|
US (2) | US7649916B2 (en) |
EP (1) | EP1766739B1 (en) |
CN (1) | CN101076928A (en) |
WO (1) | WO2006004835A2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7649916B2 (en) * | 2004-06-30 | 2010-01-19 | Finisar Corporation | Semiconductor laser with side mode suppression |
CN101867148B (en) * | 2009-04-15 | 2012-05-23 | 中国科学院半导体研究所 | FP (Fabry-Perot) cavity laser with reflecting surfaces of photonic crystals and vertical emergent surface |
US20130114634A1 (en) * | 2011-11-09 | 2013-05-09 | Dmitri Vladislavovich Kuksenkov | DBR Laser Diode With Periodically Modulated Grating Phase |
TWI766008B (en) * | 2017-06-15 | 2022-06-01 | 日商索尼半導體解決方案公司 | Surface Emitting Semiconductor Laser and Sensing Module |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3740661A (en) * | 1969-06-06 | 1973-06-19 | Bell Telephone Labor Inc | Minor lobe suppression in semiconductor injection lasers |
US3838359A (en) * | 1973-11-23 | 1974-09-24 | Bell Telephone Labor Inc | Gain asymmetry in heterostructure junction lasers operating in a fundamental transverse mode |
DE2421337C2 (en) * | 1974-05-02 | 1982-10-28 | Siemens AG, 1000 Berlin und 8000 München | Mode converter for optical waveguides |
US4077019A (en) * | 1976-01-05 | 1978-02-28 | Xerox Corporation | Transverse mode control in double-heterostructure lasers utilizing substrate loss |
US4269635A (en) * | 1977-12-28 | 1981-05-26 | Bell Telephone Laboratories, Incorporated | Strip buried heterostructure laser |
CA1137605A (en) * | 1979-01-15 | 1982-12-14 | Donald R. Scifres | High output power laser |
US4340967A (en) * | 1980-06-02 | 1982-07-20 | Bell Telephone Laboratories, Incorporated | Semiconductor lasers with stable higher-order modes parallel to the junction plane |
US4990989A (en) * | 1982-03-19 | 1991-02-05 | At&T Bell Laboratories | Restricted contact planar photodiode |
JPS61137388A (en) * | 1984-12-10 | 1986-06-25 | Matsushita Electric Ind Co Ltd | Semiconductor laser |
US4701009A (en) * | 1985-02-04 | 1987-10-20 | Hughes Aircraft Company | Spectral filter for integrated optics |
JPS62144378A (en) * | 1985-12-18 | 1987-06-27 | Sony Corp | Distributed feedback type semiconductor laser |
JPS63244694A (en) * | 1987-03-30 | 1988-10-12 | Sony Corp | Distributed feedback type semiconductor laser |
US5208864A (en) * | 1989-03-10 | 1993-05-04 | Nippon Telegraph & Telephone Corporation | Method of detecting acoustic signal |
EP0606821A1 (en) * | 1993-01-11 | 1994-07-20 | International Business Machines Corporation | Modulated strain heterostructure light emitting devices |
US5381434A (en) * | 1993-03-30 | 1995-01-10 | Bell Communications Research, Inc. | High-temperature, uncooled diode laser |
US5541979A (en) * | 1994-03-08 | 1996-07-30 | Allen Telecom Group, Inc. | Cell extender with timing alignment for use in time division multiple-access and similar cellular telephone systems |
US5438585A (en) * | 1994-05-31 | 1995-08-01 | University Of New Mexico | Unstable resonator semiconductor laser |
US5436759A (en) * | 1994-06-14 | 1995-07-25 | The Regents Of The University Of California | Cross-talk free, low-noise optical amplifier |
US5539759A (en) * | 1994-10-04 | 1996-07-23 | Board Of Trustees Of The Leland Stanford Junior University | Single mode laser with a passive antiguide region |
US5528616A (en) * | 1995-04-24 | 1996-06-18 | International Business Machines Corporation | Asymmetric dual waveguide laser |
US5559912A (en) * | 1995-09-15 | 1996-09-24 | International Business Machines Corporation | Wavelength-selective devices using silicon-on-insulator |
JP3714430B2 (en) * | 1996-04-15 | 2005-11-09 | シャープ株式会社 | Distributed feedback semiconductor laser device |
DE19637396A1 (en) * | 1996-09-13 | 1998-03-19 | Siemens Ag | Coupling arrangement for coupling waveguides together |
US5936994A (en) * | 1997-09-18 | 1999-08-10 | Northern Telecom Limited | Two-section complex coupled distributed feedback semiconductor laser with enhanced wavelength tuning range |
US6940883B2 (en) * | 2000-03-28 | 2005-09-06 | The Provost, Fellows And Scholars Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth, Near Dublin | Laser diode |
US6928223B2 (en) * | 2000-07-14 | 2005-08-09 | Massachusetts Institute Of Technology | Stab-coupled optical waveguide laser and amplifier |
JP4786024B2 (en) * | 2000-11-20 | 2011-10-05 | 三菱電機株式会社 | Distributed feedback laser and manufacturing method thereof |
JP2003046196A (en) * | 2001-08-01 | 2003-02-14 | Fuji Photo Film Co Ltd | Semiconductor laser and its manufacturing method |
CN102621630B (en) * | 2001-10-30 | 2015-03-25 | Hoya美国公司 | Optical junction apparatus and methods employing optical power transverse-transfer |
AU2002351571A1 (en) * | 2001-12-11 | 2003-07-09 | Photonamic Inc. | Phase shifted surface emitting dfb laser structures with gain or absorptive gratings |
AU2003212853A1 (en) * | 2002-01-30 | 2003-09-02 | Optronx, Inc. | Method and apparatus for altering the effective mode index of waveguide |
US6810067B2 (en) * | 2002-09-26 | 2004-10-26 | Photodigm, Inc. | Single mode grating-outcoupled surface emitting laser with broadband and narrow-band DBR reflectors |
US7649916B2 (en) * | 2004-06-30 | 2010-01-19 | Finisar Corporation | Semiconductor laser with side mode suppression |
TWI250706B (en) * | 2005-02-24 | 2006-03-01 | Gigacomm Corppration | Optical communication module and multimode distributed feedback laser diode |
-
2004
- 2004-06-30 US US10/880,655 patent/US7649916B2/en active Active
-
2005
- 2005-06-30 EP EP05856164.8A patent/EP1766739B1/en not_active Not-in-force
- 2005-06-30 CN CNA2005800214156A patent/CN101076928A/en active Pending
- 2005-06-30 WO PCT/US2005/023102 patent/WO2006004835A2/en not_active Application Discontinuation
-
2007
- 2007-07-19 US US11/780,315 patent/US7711016B2/en active Active
Non-Patent Citations (2)
Title |
---|
None |
See also references of EP1766739A4 |
Also Published As
Publication number | Publication date |
---|---|
EP1766739B1 (en) | 2017-12-20 |
US20060002441A1 (en) | 2006-01-05 |
EP1766739A2 (en) | 2007-03-28 |
US7649916B2 (en) | 2010-01-19 |
CN101076928A (en) | 2007-11-21 |
US20070263688A1 (en) | 2007-11-15 |
US7711016B2 (en) | 2010-05-04 |
EP1766739A4 (en) | 2010-01-27 |
WO2006004835A3 (en) | 2007-08-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5717726B2 (en) | DFB laser diode with lateral coupling for high output power | |
US20080291952A1 (en) | Optical semiconductor device | |
US20050053112A1 (en) | Surface emitting dfb laser structures for broadband communication systems and array of same | |
US20030016720A1 (en) | Semiconductor laser device having selective absortion qualities | |
JP2008227367A (en) | Distributed feedback semiconductor laser element | |
JP2009076942A (en) | Distributed-feedback semiconductor laser, distributed-feedback semiconductor laser array, and optical module | |
US6614822B2 (en) | Semiconductor laser devices, and semiconductor laser modules and optical communication systems using the same | |
JP2003046190A (en) | Semiconductor laser | |
US7711016B2 (en) | Semiconductor laser with side mode suppression | |
US6782022B2 (en) | Semiconductor laser device having improved output power characteristics | |
US20030047738A1 (en) | Semiconductor laser device having selective absorption qualities over a wide temperature range | |
US6870871B2 (en) | Semiconductor laser devices, and semiconductor laser modules and optical communication systems using the same | |
US6661828B2 (en) | Semiconductor laser device | |
US8189631B2 (en) | External resonator-type wavelength tunable laser device | |
JP2006203100A (en) | Semiconductor laser and light transmitter module | |
US20060045157A1 (en) | Semiconductor laser with expanded mode | |
US20050226283A1 (en) | Single-mode semiconductor laser with integrated optical waveguide filter | |
US20020105718A1 (en) | Optoelectronic device having a diffraction grating associated therewith and a method of manufacture therefor | |
CA2321607A1 (en) | Gain-coupled distributed-feedback semiconductor laser device | |
JP4243506B2 (en) | Semiconductor laser and optical module using the same | |
JP2003234541A (en) | Distributed feedback semiconductor laser element | |
JP2009087956A (en) | External resonator type variable wavelength laser and semiconductor optical amplifier built into the same | |
JP7107180B2 (en) | Multi-wavelength optical transmitter | |
JP2009016878A (en) | Semiconductor laser and optical module using the same | |
WO2006088293A1 (en) | Quantum well laser diode having wide band gain |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2005856164 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 200580021415.6 Country of ref document: CN |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: DE |
|
WWP | Wipo information: published in national office |
Ref document number: 2005856164 Country of ref document: EP |