WO2005105873A1 - Resin for resist composition, negative resist composition and method for forming resist pattern - Google Patents

Resin for resist composition, negative resist composition and method for forming resist pattern Download PDF

Info

Publication number
WO2005105873A1
WO2005105873A1 PCT/JP2005/007391 JP2005007391W WO2005105873A1 WO 2005105873 A1 WO2005105873 A1 WO 2005105873A1 JP 2005007391 W JP2005007391 W JP 2005007391W WO 2005105873 A1 WO2005105873 A1 WO 2005105873A1
Authority
WO
WIPO (PCT)
Prior art keywords
resin
structural unit
resist composition
composition according
group
Prior art date
Application number
PCT/JP2005/007391
Other languages
French (fr)
Japanese (ja)
Inventor
Jun Iwashita
Toshikazu Tachikawa
Naotaka Kubota
Original Assignee
Tokyo Ohka Kogyo Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co., Ltd. filed Critical Tokyo Ohka Kogyo Co., Ltd.
Publication of WO2005105873A1 publication Critical patent/WO2005105873A1/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography

Definitions

  • Resin for resist composition negative resist composition and method for forming resist pattern
  • the present invention relates to a resin for a resist composition, a negative resist composition, and a method for forming a resist pattern.
  • negative resist compositions used in processes using i-line or KrF excimer laser light (248 nm) as light sources include acid generators and alkali-soluble resins such as novolak resins and polyhydroxystyrene.
  • a chemically amplified negative resist containing a combination of an amino resin such as a melamine resin and a urea resin is used (for example, Patent Document 1).
  • a resin composition having improved transparency to an ArF excimer laser for example, a resin component having a carboxyl group, an alcohol
  • Negative resist compositions containing a crosslinking agent having a hydrophilic hydroxyl group and an acid generator have been proposed.
  • a type in which the fatty acid component is changed to insoluble by dissolving the fatty acid component into alkali by reacting the alcohol component with an alcoholic hydroxyl group by the action of an acid generated from an acid generator for example, Non-patent documents 1-3, patent document 2, etc.
  • Patent Document 2 Japanese Patent Application Laid-Open No. 2000-206694
  • Non Patent Literature 1 Journal of Photopolymer Science and Technology (J. Photopolym. Sci. Tech.), Vol. 10, No. 4, pp. 579-584 (1997) : Job Photopolym. Sci. Tech., Vol. 11, No. 3, pp. 507-512 (1998)
  • Non-Patent Literature 3 SPIE Advances in Resist Technology and Processing XIV, Vol. 333J, p417-424 (1998)
  • Non-Patent Document 4 SPIE Advances in Resist technology and Processing XIX, Vol. 4690, p94-100 (2002)
  • the present invention has been made in view of the above circumstances, and has as its object to provide a technique capable of suppressing swelling of a resist pattern.
  • the present invention employs the following configurations.
  • the first aspect (aspect) of the present invention is a structural unit (al) containing an alicyclic group having a fluorinated hydroxyalkyl group, and a structural unit derived from an acrylate ester, wherein a hydroxyl group And a structural unit (a2) containing an alicyclic group.
  • a second aspect (aspect) of the present invention comprises (A) the resin for a resist composition according to the first aspect of the present invention, (B) an acid generator component which generates an acid upon exposure, and (C) ) It is a negative resist composition containing a crosslinking agent component.
  • a third aspect of the present invention is to apply the negative resist composition of the second aspect of the present invention onto a substrate, pre-beta, and selectively expose, and then perform PEB (post-exposure heating). ), And alkali-developed to form a resist pattern.
  • the "structural unit” refers to a monomer unit constituting a polymer (resin).
  • Acrylic acid force-derived structural unit means a structural unit formed by cleavage of an ethylenic double bond of acrylic acid.
  • the “structural unit derived from an acrylate ester” means a structural unit formed by cleavage of an ethylenic double bond of an acrylate ester.
  • the “acrylic acid ester derived structural unit” is a concept including a compound in which a hydrogen atom at the ⁇ -position is substituted with another substituent such as an alkyl group.
  • the term “carbon atom at the ⁇ -position” refers to a carboxyl group unless otherwise specified. Is the carbon atom to which is bound.
  • the “structural unit from which acrylic acid power is also derived” is a structural unit in which the hydrogen atom bonded to the ⁇ -position carbon atom is replaced by another substituent such as an alkyl group, or a hydrogen atom is substituted for the oc-position carbon atom.
  • alkyl group refers to a linear group unless otherwise specified. , A cyclic or branched alkyl group.
  • Exposure is a concept that encompasses not only irradiation of light but also irradiation of radiation such as electron beam irradiation.
  • a technique capable of suppressing swelling of a resist pattern can be provided.
  • the resin for a resist composition of the present invention comprises a structural unit (al) containing an alicyclic group having a fluorinated hydroxyalkyl group and a structural unit derived from an acrylate ester. And a structural unit (a2) containing a hydroxyl group-containing alicyclic group.
  • the resin for a resist composition of the present invention by having the structural unit (al), the effect of suppressing swelling is improved.
  • the alicyclic group has a fluorinated hydroxyalkyl group.
  • the fluorinated hydroxyalkyl group is different from the alkyl group having a hydroxy group in that a part of hydrogen atoms of the alkyl group Or, all are substituted by fluorine. In such a group, the hydrogen atom of the hydroxyl group is easily released by fluorination.
  • the alkyl group is linear or branched, and the number of carbon atoms is not particularly limited, but is, for example, 1 to 20, preferably 4 to 16.
  • the number of hydroxyl groups is not particularly limited, but is usually one.
  • a fluorinated alkyl group or a fluorine atom is bonded to the ⁇ -position carbon atom to which the hydroxy group is bonded (here, refers to the ⁇ -position carbon atom of the hydroxyalkyl group). It is preferable that the fluorinated alkyl group and the fluorine atom are bonded to each other.
  • the fluorinated alkyl group bonded to the ⁇ -position is preferably one in which all of the hydrogen atoms of the alkyl group are substituted with fluorine.
  • the alicyclic group may be monocyclic or polycyclic! /, But is preferably a polycyclic group. Further, an alicyclic hydrocarbon group is preferred. Further, it is preferably saturated. Also, the alicyclic group preferably has 5 to 15 carbon atoms! / ,.
  • examples of the monocyclic group include groups in which one hydrogen atom has been removed from a cycloalkane.
  • examples of the polycyclic group include groups in which one or two hydrogen atoms have been removed from bicycloalkane, tricycloalkane, tetracycloalkane, and the like.
  • Examples include groups in which one or two hydrogen atoms have been removed, and it is preferred that two hydrogen atoms have been removed from cyclohexane.
  • polycyclic group examples include groups in which one or two hydrogen atoms have been removed from a polycycloalkane such as adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane.
  • a large number of such polycyclic groups have been proposed as constituents of an acid dissociable, dissolution inhibiting group in, for example, a resin for a positive photoresist composition for an ArF excimer laser process!
  • the force can be appropriately selected and used.
  • a group obtained by removing two hydrogen atoms from norbornane is particularly preferable.
  • the structural unit (al) is preferably a structural unit derived from acrylic acid, and the alicyclic group is bonded to an ester group [—c (o) o—] of an atalylic acid ester.
  • Preferred is a structure (a structure in which a hydrogen atom of a carboxyl group is substituted with the alicyclic group).
  • R is a hydrogen atom, an alkyl group, a fluorinated alkyl group, or a fluorine atom, and m, n, and p are each independently an integer of 1 to 5.
  • R is a hydrogen atom, an alkyl group, a fluorinated alkyl group, or a fluorine atom.
  • a lower alkyl group having 5 or less carbon atoms is preferable, such as a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, and a neopentyl group. And the like, and a methyl group is preferred.
  • the fluorinated alkyl group is preferably a group in which one or more hydrogen atoms of a lower alkyl group having 5 or less carbon atoms are substituted with a fluorine atom.
  • Specific examples of the alkyl group are the same as those described above.
  • the hydrogen atom substituted with a fluorine atom may be a part of the hydrogen atoms constituting the alkyl group or all of them.
  • R a hydrogen atom or an alkyl group is preferred, a hydrogen atom or a methyl group is particularly preferred, and a hydrogen atom is most preferred.
  • n, m, and p are each preferably 1.
  • the structural unit (al) can be used alone or as a mixture of two or more.
  • the effect of suppressing swelling is improved by including the structural unit ( a2 ). Further, the effect of improving the etching resistance can be obtained.
  • the hydroxyl group (alcoholic hydroxyl group) iS (B) of the constituent unit (a2) is acted upon by the action of the acid generated from the acid generator to produce ( C) Reacts with the cross-linking agent, whereby the resin for resist composition changes into a property of being soluble in an alkali developer to a property of being insoluble.
  • the hydroxyl group-containing alicyclic group is preferably bonded to an ester group (-C (O) O-) of an acrylate ester.
  • another substituent may be bonded to the ⁇ -position (the carbon atom at the ⁇ -position) instead of a hydrogen atom.
  • the substituent preferably includes an alkyl group, a fluorinated alkyl group, and a fluorine atom.
  • the hydroxyl group-containing alicyclic group is a group in which a hydroxyl group is bonded to an alicyclic group.
  • the number of hydroxyl groups is preferably, for example, one to three, more preferably one. Further, an alkyl group having 1 to 4 carbon atoms may be bonded to the alicyclic group.
  • the alicyclic group may be monocyclic or polycyclic! /, But is preferably a polycyclic group. Also
  • an alicyclic hydrocarbon group is preferably saturated.
  • the alicyclic group preferably has 5 to 15 carbon atoms.
  • examples of the monocyclic group include groups in which one hydrogen atom has been removed from a cycloalkane.
  • examples of the polycyclic group include groups obtained by removing one hydrogen atom from bicycloalkane, tricycloalkane, tetracycloalkane, and the like.
  • a group excluding one hydrogen atom is preferred, and a cyclohexyl group is preferred.
  • polycyclic groups include groups in which one hydrogen atom has been removed from polycycloalkanes such as adamantan, norbornane, isobornane, tricyclodecane, and tetracyclododecane.
  • a large number of such polycyclic groups have been proposed as constituents of an acid dissociable, dissolution inhibiting group in, for example, a resin for a positive photoresist composition for an ArF excimer laser process!
  • the force can be appropriately selected and used.
  • a cyclohexyl group, an adamantyl group, a norbornyl group, and a tetracyclododele group are industrially available and readily preferred.
  • a cyclohexyl group and an adamantyl group are preferred, and an adamantyl group is particularly preferred.
  • a structural unit represented by the following general formula (2) is preferable.
  • R is a hydrogen atom, an alkyl group, a fluorinated alkyl group or a fluorine atom, and q is an integer of 1-3.
  • R is a hydrogen atom, an alkyl group, a fluorinated alkyl group, or a fluorine atom bonded to the ⁇ -position, and is the same as described in the general formula (1).
  • R is most preferably a hydrogen atom! / ,.
  • q is preferably a force 1 which is an integer of 1 to 3.
  • the bonding position of the hydroxyl group is not particularly limited, but is preferably bonded to the 3-position of the adamantyl group.
  • the structural unit (a2) can be used alone or as a mixture of two or more.
  • the structural unit having an alcoholic hydroxyl group in the side chain (a 3) is described Te Nitsu ⁇ .
  • a structural unit derived from acrylic acid and having no cyclic structure, and having an alcohol in a side chain in addition to the structural unit (al) and the structural unit (a2), a structural unit derived from acrylic acid and having no cyclic structure, and having an alcohol in a side chain. It preferably has a structural unit (a3) having a hydroxyl group.
  • the structural unit (a3) is clearly distinguished from the structural unit (a2) by not having a cyclic structure.
  • the resin for a resist composition having the structural unit (a3) is blended into a negative resist composition, the hydroxyl group of the structural unit (a3) and the hydroxyl group of the hydroxyalkyl group of the structural unit (a3) are changed to ( The action of the acid generated from the acid generator (B) reacts with the cross-linking agent (C), whereby the resin for resist composition changes to a property soluble in an alkali developer to a property insoluble in an alkali developer.
  • phrases "having an alcoholic hydroxyl group in the side chain” includes, for example, structural units having a hydroxyalkyl group bonded thereto.
  • the hydroxyalkyl group may be bonded, for example, to the ⁇ -position carbon atom of the main chain (the portion where the ethylenic double bond of acrylic acid is cleaved), or may be substituted with a hydrogen atom of the carboxyl group of acrylic acid.
  • the structural unit (a3) which may form an ester it is preferable that at least one of these is present and both are present.
  • the structural unit (a3) is preferably represented by the following general formula (3).
  • R 1 is a hydrogen atom, an alkyl group, fluorinated alkyl group, a fluorine atom or a hydroxy Shiarukiru group
  • R 2 represents a hydrogen atom, an alkyl group or hydroxyalkyl group der, is, and, the R 2 At least one is a hydroxyalkyl group.
  • R 1 hydroxyalkyl group, preferably a lower hydroxyalkyl group of not more than 10 carbon atoms, more preferably a lower hydroxyalkyl group having 2 to 8 carbon atoms, and most preferably a hydroxymethyl group, or It is a hydroxyethyl group.
  • the number and the bonding position of the hydroxyl group are not particularly limited, but are usually one, and it is preferable that the hydroxyl group is bonded to the terminal of the alkyl group.
  • the alkyl group is preferably a lower alkyl group of not more than 10 carbon atoms, more preferably a lower alkyl group having 2 to 8 carbon atoms, most preferably Echiru group, a methylation group.
  • the fluorinated alkyl group is preferably a carbon number of 5 or less lower alkyl group (preferably Echiru group, a methyl group) in which part or all of the hydrogen atoms are substituted with fluorine groups.
  • R 2 an alkyl group, hydroxyalkyl group, are similar to those for R 1.
  • the structural unit (a3) specifically, a structural unit derived from ⁇ - (hydroxyalkyl) acrylic acid, a structural unit derived from a- (hydroxyalkyl) acrylic acid, and ( ( ⁇ -alkyl) acrylic acid hydroxyalkyl ester power Structural unit derived.
  • the structural unit (a3) is a-(hydro) from the viewpoint of improving the effect and improving the film density. It is preferable to include a constitutional unit derived from an (xyalkyl) alkyl acrylate ester. And, among them, a (hydroxymethyl) acrylate ester or ⁇ (hydroxymethyl) -acrylate is also preferred.
  • a structural unit derived from the structural unit (a3) hydroxyalkyl (acrylate) is preferable.
  • a structural unit derived from a-methyl-acrylic acid hydroxyethyl ester or ⁇ -methyl-acrylic acid hydroxymethyl ester is preferable.
  • the structural unit (a3) can be used alone or in combination of two or more.
  • the resin for a resist composition of the present invention in addition to the structural unit (al) and the structural unit ( a2 ), the resin is derived from an acrylic acid ester containing a monocyclic or polycyclic group containing ratatotone.
  • U which preferably has the structural unit (a4)
  • the structural unit (a3) may be used in combination.
  • the rataton-containing monocyclic or polycyclic group of the structural unit (a4) enhances the adhesion of the resist film to the substrate or increases the hydrophilicity with the developer. It is effective because it can be raised. In addition, the effect of suppressing swelling is improved.
  • rataton here refers to one ring including a -O-C (O)-structure, which is counted as one eye ring. Therefore, when only a rataton ring is used, it is called a monocyclic group, and when it has another ring structure, it is called a polycyclic group regardless of its structure.
  • the structural unit (a4) is not particularly limited as long as it has a rataton ring having both the ester structure (—O—C (O) —) and a ring structure. Can be used
  • examples of the ratatone-containing monocyclic group include groups excluding one ⁇ -petit rataton force hydrogen atom.
  • examples of the rataton-containing polycyclic group include a bicycloalkane, a tricycloalkane, and a tetracycloalkane having a rataton ring, in which one hydrogen atom is excluded.
  • groups excluding one ratatotone-containing tricycloalkane hydrogen atom having the following structural formula are advantageous in terms of industrial availability, and the like.
  • those having a norbornane rataton are preferable among those which are a rataton-containing polycyclic group, and the like.
  • another substituent may be bonded to the ⁇ -position (the carbon atom at the ⁇ -position) instead of a hydrogen atom.
  • the substituent preferably includes an alkyl group, a fluorinated alkyl group, or a fluorine atom.
  • examples of the structural unit (a4) include structural units represented by the following general formulas (a4-1) to (a4-5).
  • R is the same as described above.
  • R ′ is each independently a hydrogen atom, an alkyl group, or an alkoxy group having 1 to 5 carbon atoms, and m is an integer of 0 or 1.
  • R ′ in the general formulas (a4-1) to (a4-5) is the same as the alkyl group of R in the structural unit (al).
  • R ′ is preferably a hydrogen atom in view of industrial availability.
  • the units represented by general formulas (a4-2) to (a4-3) are most preferable.
  • one type may be used alone, or two or more types may be used in combination.
  • the structural units (al) to (a4) are preferably selected from, for example, four types of combinations as described below.
  • the structural unit (al) is a structural unit represented by the general formula (1)
  • R in the general formula (1) is a hydrogen atom.
  • a hydrogen atom is preferably bonded to the ⁇ -position (carbon atom to which a carboxyl group is bonded) of the structural unit (a2). The reason is that the dissolution contrast is improved.
  • the selection is made to include a combination of the structural unit (al), the structural unit (a2), and the structural unit (a3).
  • the structural unit (al) is a structural unit represented by the general formula (1), and that R in the general formula (1) is a hydrogen atom.
  • R in the general formula (1) is a hydrogen atom.
  • a hydrogen atom be bonded to the ⁇ -position of the structural unit (a2). The reason is that the dissolution contrast becomes better.
  • the selection is made to include a combination of the structural unit (al), the structural unit (a2), and the structural unit (a4).
  • the structural unit (al) is a structural unit represented by the general formula (1), and R in the general formula (1) is a hydrogen atom.
  • a hydrogen atom is preferably bonded to the ⁇ -position of the structural unit (a2), and a hydrogen atom is preferably bonded to the a-position of the structural unit (a4).
  • the selection is made to include a combination of the structural unit (al), the structural unit (a2), the structural unit (a3), and the structural unit (a4).
  • the structural unit (al) is a structural unit represented by the general formula (1), and R in the general formula (1) is a hydrogen atom.
  • a hydrogen atom is preferably bonded to the ⁇ -position of the structural unit (a2), and a hydrogen atom is preferably bonded to the a-position of the structural unit (a4).
  • At least two of the structural unit (al) and the structural unit (a2) are essential.
  • the ratio of each structural unit in the resin is in the following numerical range. Is preferably satisfied.
  • the proportion of the structural unit (al) is preferably 20 to 80 mol%, more preferably 30 to 70 mole 0/0, and most preferably 35 to 55 mole 0/0.
  • the proportion of the structural unit (a2) is preferably 20 to 80 mole 0/0, more preferably 30 to 70 mol%, and most preferably 35 to 55 mole 0/0.
  • the proportion of the structural unit (al) is preferably 20 to 80 mol%, more preferably from 3 0 to 70 mole 0/0, and most preferably 35 to 55 mole 0/0.
  • the proportion of the structural unit (a2) is preferably 10 to 70 mole 0/0, more preferably 10 to 50 mol%, more preferably from 20 to 40 mole 0/0.
  • the proportion of the structural unit (a3) is preferably 10 to 70 mole 0/0, more preferably 10 to 40 mol%, and most preferably 15 to 35 mole 0/0.
  • the effect of suppressing swelling is improved.
  • the structural unit (a2) and the structural unit (a3) in a well-balanced manner, an appropriate contrast is obtained and the resolution is improved. Further, etching resistance is improved. A better exposure latitude can be obtained.
  • the proportion of the structural unit (a2) is preferably 14 to 70 mole 0/0, more preferably 15 to 50 mol%, and most preferably from 30 to 50 mole 0/0.
  • the proportion of the structural unit (a4) is preferably 1 to 70 mol 0/0, more preferably 3 to 50 mol%, and most preferably 5 to 20 mol%.
  • the proportion of the structural unit (al) is preferably 10 to 85 mol%, more preferably from 2 0 to 70 mole 0/0, and most preferably 25 to 50 mole 0/0.
  • the proportion of the structural unit (a2) is preferably 10 to 80 mole 0/0, more preferably 20 to 70 mol%, and most preferably from 30 to 50 mole 0/0.
  • the proportion of the structural unit (a3) is preferably 4 to 70 mol%, more preferably 7 to 50 mol%, and most preferably 10 to 30 mole 0/0.
  • the proportion of the structural unit (a4) is preferably 1 to 70 mol 0/0, more preferably 3 to 50% by mole, and most preferably 5 to 20% by mole.
  • the resin for a resist composition may have another copolymerizable structural unit other than the structural units selected from the structural units (al) to (a4). al) to structural unit (a4) It is preferable that the resin is a resin having a structural unit selected from the main components as a main component.
  • the main component is preferably such that the total of the constituent units for which these forces are also selected is 70 mol% or more, preferably 80 mol% or more, and particularly preferably 100%.
  • the resist composition for ⁇ of the present invention the structural units (al) to the structural units of (a4) (al) and the structural unit (a2) is required and that it has.
  • the weight average molecular weight (Mw; weight average molecular weight in terms of polystyrene by gel permeation chromatography) of the resin for a resist composition is preferably from 2000 to 30,000, more preferably from 2000 to 10,000, and most preferably. Is between 3000 and 8000. This range is preferable from the viewpoint of suppressing swelling and thereby suppressing microbridges. Also, high resolution point power is preferred. The lower the molecular weight, the better the properties tend to be.
  • the resin for a resist composition can be obtained, for example, by subjecting a monomer for deriving each structural unit to radical polymerization by a conventional method.
  • the resin for a resist composition of the present invention is preferably used for a negative resist composition.
  • the negative resist composition of the present invention contains (A) the resin for a resist composition of the present invention, (B) an acid generator component that generates an acid upon exposure, and (C) a crosslinking agent component.
  • the components (A) are as described above.
  • the component (A) can be used alone or in combination of two or more.
  • the content of the component (A) may be adjusted according to the resist film thickness to be formed.
  • the component (B) can be used without particular limitation from known acid generators used in conventional chemically amplified resist compositions.
  • Such acid generators include, for example, rhodium salt-based acid generators such as odonium salts and sulfo-dum salts, oxime sulfonate-based acid generators, bisalkyl or bisarylsulfol-diazomethanes, Various types are known, such as diazomethane acid generators such as poly (bissulfol) diazomethanes and nitrobenzylsulfonates, iminosulfonate acid generators, and disulfone acid generators.
  • rhodium salt-based acid generators such as odonium salts and sulfo-dum salts
  • oxime sulfonate-based acid generators such as oxime sulfonate-based acid generators, bisalkyl or bisarylsulfol-diazomethanes
  • diazomethane acid generators such as poly (bissulfol) diazomethanes
  • the acid salt-based acid generator include trifluoromethanesulfonate or nonafluorobutanesulfonate of di-fluorodominium, trifluoromethanesulfonate or nonafluorobenoble of bis (4-tert-butylphenyl) iodenum.
  • oxime sulfonate-based acid generator examples include: a (methylsulfo-roximino) -phenylacetonitrile, at- (methylsulfo- luximino) -p-methoxyphenylacetonitrile, ⁇ - (trifluoromethyl) Sulfo-Roxyimino) -Furea-ceto-tolyl, ⁇ - (Trifluoromethylsulfo-Roxyimino) -p-Methoxyphenyl-acetonitrile, at- (Ethylsulfonyloxyminino) -p-Methoxyphenylacetonitrile, ⁇ - (Propylsulfo-roximinino) p-methylphenyl-acetonitrile, ⁇ (methylsulfo-roximinino) ⁇ -bromo-phenylacetonitrile and the like. Of these, ⁇ (methylsulfo-roxi
  • bisalkyl or bisarylsulfol-diazomethanes include bis (isopropylsulfol) diazomethane, bis ( ⁇ toluenesulfol) diazomethane, and bis (1 , 1-dimethylethylsulfol) diazomethane, bis (cyclohexylsulfol) diazomethane, bis (2,4 dimethylphenylsulfol) diazomethane and the like.
  • poly (bissulfonyl) diazomethanes examples include, for example, 1,3 bis (phenylsulfol-diazomethylsulfol) propane having the following structure (digestion compound ⁇ , decomposition point 135 ° C) ), 1,4-bis (phenylsulfol-diazomethylsulfol) butane (compound B, decomposition point 147 ° C), 1,6-bis (phenylsulfol-l-diazomethylsulfol) hexane (Compound C, melting point 132 ° C, decomposition point 145 ° C), 1,10 bis (phenylsulfol-diazomethylsulfol) decane (disulfide compound D, decomposition point 147 ° C), 1,2 bis (Cyclohexylsulfol-l-diazomethylsulfol) ethane (I-conjugated product E
  • an aluminum salt having a fluorinated alkyl sulfonate ion as the component (B) is used as the component (B). It is preferable to use.
  • one type of acid generator may be used alone, or two or more types may be used in combination. May be used.
  • the content of the component (B) is 0.5 to 30 parts by mass, preferably 1 to 10 parts by mass, based on 100 parts by mass of the component (A). With the above range, the pattern can be sufficiently formed. In addition, a uniform resist solution is obtained, and storage stability is improved.
  • the component (C) is not particularly limited, and may be arbitrarily selected from crosslinker components used in chemically-amplified negative-type resist compositions known so far. it can.
  • an amino group-containing compound such as melamine, acetoguanamine, benzoguanamine, urea, ethylene urea, or glycol peryl is reacted with formaldehyde or formaldehyde and lower alcohol, and the hydrogen atom of the amino group is replaced with a hydroxymethyl group or a lower alkoxymethyl group. Substituted products are included.
  • melamine-based products use melamine-based cross-linking agents
  • urea-based products use urea-based cross-linking agents
  • ethylene-urea-based products use ethylene-urea-based cross-linking agents
  • peryl crosslinking agents With peryl crosslinking agents!
  • Specific examples include hexamethoxymethyl melamine, bismethoxymethyl urea, bismethoxymethyl bismethoxyethylene urea, tetramethoxymethyldaricol peril, and tetrabutoxymethyl glycol peril.
  • the component (C) is particularly preferably at least one selected from a melamine-based crosslinking agent, a urea-based crosslinking agent, an ethyleneurea-based crosslinking agent, and a glycolperyl-based crosslinking agent. Particularly preferred are glycol-peryl crosslinking agents.
  • the glycol peryl-based cross-linking agent includes glycol peryl substituted at the N-position with a hydroxyalkyl group or lower alkoxyalkyl group as a cross-linking group, or at the N-position. Glycol peryl substituted with a hydroxyalkyl group and a lower alkoxyalkyl group which are cross-linking groups are preferred!
  • examples of the glycoluril-based crosslinking agent include, for example, mono-, di-, tri- or tetrahydroxymethyldaricol-peryl, mono-, di-, tri- and / or tetramethoxymethyl-dalichol-peryl, mono-, di-, tri- And Z or tetraethoxymethyldaricol peril, mono, di, tri and Z or tetrapropoxymethyl iridyl glycol peryl, mono, di, tri and Z or tetrabutoxy methyl iridyl glycol peril and the like.
  • “Mono, di, tri and / or tetra” means that one or more of the mono, di, tri and tetra is required. Is preferably a tri- ⁇ tetra-isomer.
  • This crosslinking agent can be obtained, for example, as a commercial product “Mx270” (product name, manufactured by Sanwa Chemical Co., Ltd.). These are mostly tri- and tetra-forms, and are mixtures of monomers, dimers and trimers.
  • the compounding amount of the component (C) is 3 to 15 parts by mass, preferably 5 to 10 parts by mass, per 100 parts by mass of the component (A).
  • the component (A) can be made alkali-insoluble.
  • the amount is 15 parts by mass or less, a decrease in resolution can be prevented.
  • the negative resist composition of the present invention further comprises a nitrogen-containing organic compound (D) (hereinafter referred to as component (D)) as an optional component in order to improve the resist pattern shape, the stability with time of storage, and the like. ) Can be blended.
  • component (D) nitrogen-containing organic compound
  • component (D) a wide variety of components have already been proposed, any known one may be used arbitrarily, and aliphatic amines, particularly secondary aliphatic amines ⁇ tertiary aliphatic amines, are preferred. .
  • At least one of the hydrogen atoms of ammonia NH has at least 12 carbon atoms.
  • Amines alkylamines or alkylalcoholamines substituted with an alkyl or hydroxyalkyl group below. Specific examples thereof include monoalkylamines such as n-hexylamine, n-butylamine, n-octylamine, n-norylamine, and n-decylamine; getylamine, di-n-propylamine, di-n-butylamine, di-n-octylamine.
  • Dicyclohexylamine and the like trimethylamine, triethylamine, tri- n -propylamine, tri-n-butylamine, tri-n-hexylamine, tri-n-pentylamine, tri-n-ptylamine, tri-n-octylamine, Trialkylamines such as tri-n-no-lamine, tri-n-de-lamine and tri-n-dodecylamine; diethanolamine, triethanolamine, diisopropanolamine, triisopropanolamine, di- n -o Kutanolamine, tree n —Alkyl alcoholamines such as octanolamine and the like.
  • Component (D) is generally used in an amount of 0.015.0 parts by mass with respect to 100 parts by mass of component (A).
  • alkyl alcoholamines and trialkylamines are preferred, and alkyl alcoholamines are most preferred.
  • alkyl alcoholamines an alkyl alcohol amine such as triethanolamine / triisopropanolamine is most preferable.
  • an organic carboxylic acid or an oxo acid of phosphorus or a derivative thereof as an optional component.
  • component (E) (hereinafter referred to as component (E)).
  • the component (D) and the component (E) can be used in combination, or one of them can be used.
  • organic carboxylic acid for example, malonic acid, citric acid, malic acid, succinic acid, benzoic acid, salicylic acid and the like are suitable.
  • Phosphorus oxo acids or derivatives thereof include phosphoric acid, phosphoric acid such as di-n-butyl phosphate and diphenyl phosphate, and derivatives such as esters thereof, phosphonic acid, dimethyl phosphonate, and phosphonic acid.
  • phosphoric acid such as di-n-butyl phosphate and diphenyl phosphate
  • derivatives such as esters thereof, phosphonic acid, dimethyl phosphonate, and phosphonic acid.
  • -N-butyl ester Hue- Derivatives such as phosphonic acids and their esters such as diphosphonic acid, diphenyl phosphonate and dibenzyl phosphonate, and derivatives such as phosphinic acids and esters thereof such as phosphinic acid and phenylphosphinic acid.
  • phosphonic acid is particularly preferred.
  • the component (E) is used in an amount of 0.01 to 5.0 parts by mass per 100 parts by mass of the component (A).
  • the negative resist composition of the present invention can be produced by dissolving the constituent materials of the negative resist composition of the present invention in an organic solvent.
  • the constituent materials of the negative resist composition of the present invention are (A) the resin for a resist composition of the present invention, (B) an acid generator component that generates an acid upon exposure, and (C) a crosslinking agent component. .
  • the constituent material of the negative resist composition of the present invention contains at least one of the (D) nitrogen-containing organic compound and the (E) component in addition to the components (A) to (C).
  • any one can be used as long as it can dissolve each component to be used and can form a uniform solution.
  • the above can be appropriately selected and used.
  • ratatones such as ⁇ -butyrolatatone, ketones such as acetone, methyl ethyl ketone, cyclohexanone, methyl isoamyl ketone, and 2-heptanone; ethylene glycol, ethylene glycol monomonoacetate, diethylene glycol, and diethylene glycol Monoacetate, propylene glycol, propylene glycol monoacetate, dipropylene glycol or dipropylene glycol monoacetate, such as monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether or monophenyl ether and polyhydric alcohols and derivatives thereof, Cyclic ethers such as dioxane; methyl lactate, ethyl lactate (EL); methyl acetate; ethyl acetate; butyl acetate; methyl pyruvate; Acid Echiru, methyl methoxypropionate, and the like esters such as ethoxy
  • organic solvents may be used alone or as a mixed solvent of two or more. Further, a mixed solvent obtained by mixing propylene glycol monomethyl ether acetate (PGMEA) and a polar solvent is preferable.
  • the mixing ratio may be appropriately determined in consideration of the compatibility between PGMEA and the polar solvent, but is preferably 1: 9 to 9: 1, more preferably 2: 1 to 9: 1. : 8 to 8: preferably in the range of 2! / ,.
  • the mass ratio of PGMEA: EL is preferably 2: 8 to 8: 2, more preferably 3: 7 to 7: 3! / ,.
  • a mixed solvent of at least one selected from PGMEA and EL and ⁇ -petit mouth rataton is also preferable.
  • the mixing ratio of the former and the latter is preferably 70: 30-95: 5.
  • propylene glycol monomethyl ether PGME
  • PGME propylene glycol monomethyl ether
  • the amount of the organic solvent used is not particularly limited, it is a concentration that can be applied to a substrate or the like and is appropriately set according to a coating film thickness.
  • the solid content concentration of the resist composition is 2 to 20 mass %, Preferably in the range of 5 to 15% by mass.
  • the negative resist composition of the present invention may contain other optional components in addition to the above-mentioned components, and if necessary, improve the performance of a miscible additive such as a resist film.
  • a surfactant, a dissolution inhibitor, a plasticizer, a stabilizer, a colorant, an antihalation agent, a dye, and the like for improving the application of the resin and the coatability can be appropriately added and contained.
  • the negative resist composition of the present invention is not particularly limited, but is suitable for processes using an ArF excimer laser as an exposure light source.
  • the process requires high resolution, and in the negative resist composition of the present invention, various properties such as resolution are improved by suppressing swelling. This is because such strict requirements can be met.
  • Another reason is that a structure having high transparency to an ArF excimer laser can be obtained.
  • the method of forming a resist pattern comprises applying the negative resist composition of the present invention onto a substrate, pre-betaing (PAB), selectively exposing, subjecting to PEB (heating after exposure), and developing an alkaline image to form a resist pattern.
  • PAB pre-betaing
  • the method of forming a resist pattern according to the present invention can be performed, for example, as follows. That is, first, the negative resist composition is applied on a substrate such as silicon wafer with a spinner or the like. Next, the negative resist composition is applied with a prebeta at a temperature of 80 to 150 ° C. for 40 to 120 hectares, preferably 60 to 90 hectares. Next, the pre-stressed resist film is selectively exposed to ArF excimer laser light through a desired mask pattern using, for example, an ArF exposure device. Then, PEB (post-exposure bake) is applied to the selectively exposed resist film at a temperature of 80 to 150 ° C. for 40 to 120 seconds, preferably 60 to 90 seconds.
  • PEB post-exposure bake
  • an alkali developer of the resist film subjected to the PEB e.g. 0.1 to 10 weight 0/0 tetramethylammonium - development processing using Umuhidorokishido solution.
  • an organic or inorganic antireflection film can be provided between the substrate and the coating layer of the resist composition.
  • the wavelength used for the exposure is not particularly limited.
  • the resist composition according to the present invention is effective for ArF excimer laser as described above.
  • LER Lie Edge Roughness
  • HEMA hydroxyethyl methacrylate
  • AdOHA adamantanol acrylate
  • NBLA norbornane ratatone acrylate
  • NMR Nuclear Magnetic Resonance
  • the obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 19.8 g of a white solid (yield 86.8%).
  • the results of proton nuclear magnetic resonance spectrum ⁇ H-NMR) and infrared absorption spectrum (IR) were as follows.
  • Synthesis example 7 7.87 g of NBHFAA, 3.51 g of HEMA, 6.60 g of AdOHA, and 0.58 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). Next, the solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C., and then cooled to room temperature. Next, the reaction solution was concentrated by an evaporator, and then the concentrated solution was dissolved in THF (120 ml) and poured into heptane (1000 ml) to precipitate a resin, followed by filtration. The obtained resin was dried in a dryer at 40 ° C. for 24 hours to obtain 14.9 g of a white solid (yield: 85.7%).
  • the results of proton nuclear magnetic resonance spectrum ⁇ H-NMR) and infrared absorption spectrum (IR) were as follows.
  • NBHFAA 12.66 g, HEM AO. 6 g, and AdOHAl. 03 g, and a polymerization initiator 0.35 g of dimethyl azobisisoacetate was dissolved in 100 ml of THF (tetrahydrofuran). Next, this solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C, and then cooled to room temperature. Next, after concentrating the reaction solution with an evaporator, the concentrated solution was dissolved in 60 ml of THF, and poured into 2000 ml of heptane to precipitate a resin, which was filtered. The obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 10.63 g of a white solid (yield: 74.3%).
  • the chemical formula of the obtained resin is as shown in the following chemical formula (7). Its mass average molecular weight (Mw) was 3,800, and dispersity (MwZMn) was 1.37. This is referred to as resin 11.
  • the chemical formula of the obtained resin is as shown in the following chemical formula (8). Its mass average molecular weight (Mw) was 9,700 and the degree of dispersion (MwZMn) was 1.76. This is referred to as resin 12.
  • the amount of the solvent used was adjusted so that the resist solid content concentration was about 8% by mass.
  • Binderl ⁇ M x270 (product name, manufactured by Sanwa Chemical Co., Ltd.)
  • Binder2 ⁇ E6301 (Product name, manufactured by Sanwa Chemical Co., Ltd.)
  • Organic anti-reflective coating composition “AR-19” (trade name, manufactured by Shipley) is applied on an 8-inch silicon wafer using a spinner, baked on a hot plate at 215 ° C for 60 seconds, and dried. As a result, an organic antireflection film having a film thickness shown in Table 3 was formed. Then, the negative resist composition manufactured as described above is applied on an antireflection film using a spinner, pre-betaed (PAB) on a hot plate under the conditions shown in Table 3, and dried to obtain the composition shown in Table 3. A resist layer having a thickness was formed.
  • PAB pre-betaed
  • PEB treatment was performed under the conditions shown in Table 3, followed by paddle development at 23 ° C with a 2.38% by weight aqueous solution of tetramethylammonium hydroxide for 60 seconds, followed by washing with water for 20 seconds and drying to form a resist pattern. Formed.
  • the exposure amount (sensitivity) at which the width of the line and space was formed at 1: 1 was obtained.
  • the exposure amount (sensitivity) at which the line and space width was 1: 1 in a 160 nm line and space pattern (L & S) was determined.
  • Example 1 200 nm 90 ° C / 60 seconds 100/60 seconds Silicon A 8 8 r> m
  • Example 2 200 nm 90 ⁇ : / 60 sec. At 100/60 sec.
  • Example 3 200 nm 90 ° C / 60 sec. 100 ° C / 60 sec.
  • Example 6 200 nm 80 ° C / 60 sec. 100 ° C No. 60 sec.
  • Example 7 200 nm 80 ° C / 60 seconds 100 ° C / 60 seconds Silicon wafer 82 nm
  • Example 8 200nm 80 ⁇ C / 60sec 100 ° C / 60sec Silicon layer 82nm
  • Example 9 200 nm 80. C / 60 sec 100 ° C / 60 sec Silicon wafer 8 2 nm
  • Example 1 1 200nm 803 ⁇ 4 / 60sec 10CTC / 60sec Silicon wafer & 2nm
  • Comparative Example 2 300 nm 1 10 t / 60 sec nO ° C / 60 sec Silicon wafer 8 2 nm
  • Sensitivity is the sensitivity at which an L & S pattern of 1400 nm 1: 1 is obtained
  • the resist pattern had a good rectangularity without any practical problem.
  • the precipitated resin was taken out, dissolved in 150 ml of THF, and poured into 2,000 ml of heptane to precipitate the resin, followed by filtration.
  • the obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 19.8 g of a white solid (yield: 86.8%).
  • the obtained resin is represented by the chemical formula (4). Its mass average molecular weight (Mw) was 7,500, and its dispersion (MwZMn) was 2.15.
  • the precipitated resin was taken out, dissolved in 150 ml of THF, and poured into 2000 ml of heptane to precipitate the resin, followed by filtration.
  • the obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 14.9 g of a white solid (yield: 73.8%).
  • the obtained resin is represented by the chemical formula (4). Its mass average molecular weight (Mw) was 6,500 and the degree of dispersion (MwZMn) was 1.92.
  • the obtained resin is represented by the following chemical formula (10). Its mass average molecule
  • the dispersity (MwZMn) was 2.23.
  • the obtained resin is represented by the following chemical formula (11). Its mass average molecular weight (Mw) was 5,600 and its dispersion (MwZMn) was 2.24.
  • the obtained resin is represented by the following chemical formula (13). Its mass average molecular weight (Mw) was 3000 and the degree of dispersion (MwZMn) was 1.83.
  • Synthesis example 1 7 40 20 30 10 ⁇ 6000 2.23 (Fiber 17)
  • Example 1 Silicon 200nm 80/60 Qin. C / 60 seconds wafer 82nm
  • Example 1 Silicon 200nm 80/60 sec 100 "C / 60sec wafer 82nm
  • Example 1 Silicon 200nm 80. C / 60sec 100 / 60sec wafer 82nm
  • Example 15 5 Silicon 200nm 80 ⁇ / 60 sec 100. C / 60 sec ⁇ Ah 82nm
  • Example 16 Silicon / 200 nm 80/60 sec 100/60 sec
  • Example 1 Silicon 200 nm 80/60 sec 100. C / 60 sec.
  • Example 20 Silicon 200 nm 80/60 seconds 100/60 seconds
  • ARC_29 ⁇ Product name, organic anti-reflective coating made by Brew Science Inc.
  • Example 1 2 1 4 OnmL S 42mJ / cm 2 Example 1 3 1 2 OnmL S 29mJ / cm e Example 1 4 1 50 rim and S 26mJ / cm 2 Example 1 5 1 2 OnmL S 29 mJ / cm 2 Example 1 6 1 2 Onm LS ⁇ 32 mJ / cm a Example 1 7 1 3 OnmL S ⁇ 32 mJ / om 2 Example 1 8 1 2 OnmL S ⁇ 32 mJ / cm 2 Example 1 9 1 2 OnmL SO 30mJ / cm 2 Example 20 1 3 OnmL S o 35mJ / cm 2 From the results shown in Table 8, it was confirmed that in Examples according to the present invention, swelling was suppressed and a fine resist pattern could be formed.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A resin for a resist composition, which comprises a constituting unit (a1) containing an alicyclic group having a fluorinated hydroxyalkyl group, and a constituting unit (a2) being derived from an acrylic acid ester and containing a hydroxyl group-containing alicyclic group; and a negative resist composition which comprises the above resin for a resist composition. A resist pattern is formed by the use of the negative resist composition.

Description

明 細 書  Specification
レジスト組成物用樹脂、ネガ型レジスト組成物及びレジストパターン形成 方法  Resin for resist composition, negative resist composition and method for forming resist pattern
技術分野  Technical field
[0001] 本発明は、レジスト組成物用榭脂、ネガ型レジスト組成物及びレジストパターン形成 方法に関するものである。  The present invention relates to a resin for a resist composition, a negative resist composition, and a method for forming a resist pattern.
本願は、 日本国特許庁に 2004年 04月 27日に出願された特願 2004— 131115 号と 2004年 09月 10日に出願された特願 2004— 263753号に基づく優先権を主張 し、その内容をここに援用する。  Priority is claimed on Japanese Patent Application No. 2004-131115 filed on Apr. 27, 2004 and Japanese Patent Application No. 2004-263375, filed on Sep. 10, 2004 with the Japan Patent Office. The contents are incorporated herein.
背景技術  Background art
[0002] 従来、 i線や KrFエキシマレーザー光(248nm)を光源とするプロセスに使用するネ ガ型レジスト組成物としては、酸発生剤とノボラック榭脂ゃポリヒドロキシスチレンなど のアルカリ可溶性榭脂とメラミン榭脂ゃ尿素樹脂などのアミノ榭脂との組合せを含む 化学増幅型のネガ型レジストが用いられている(例えば、特許文献 1など)。  [0002] Conventionally, negative resist compositions used in processes using i-line or KrF excimer laser light (248 nm) as light sources include acid generators and alkali-soluble resins such as novolak resins and polyhydroxystyrene. A chemically amplified negative resist containing a combination of an amino resin such as a melamine resin and a urea resin is used (for example, Patent Document 1).
[0003] そして、さらに短波長の ArFエキシマレーザーを用いるプロセスに適用するネガ型 レジスト組成物としては、 ArFエキシマレーザーに対する透明性を向上させたものとし て、例えばカルボキシル基を有する榭脂成分、アルコール性水酸基を有する架橋剤 、及び酸発生剤を含むネガ型レジスト組成物が提案されて ヽる。  [0003] Further, as a negative resist composition applicable to a process using an ArF excimer laser having a shorter wavelength, a resin composition having improved transparency to an ArF excimer laser, for example, a resin component having a carboxyl group, an alcohol, Negative resist compositions containing a crosslinking agent having a hydrophilic hydroxyl group and an acid generator have been proposed.
これは、酸発生剤力も発生する酸の作用によって、榭脂成分のカルボキシル基と架 橋剤のアルコール性水酸基とが反応することにより、榭脂成分をアルカリ可溶性から 不溶性に変化させるタイプである。  This is a type in which the carboxyl group of the resin component reacts with the alcoholic hydroxyl group of the crosslinking agent by the action of an acid which also generates an acid generator, thereby changing the resin component from alkali-soluble to insoluble.
また、カルボキシル基またはカルボン酸エステル基とアルコール性水酸基とをそれ ぞれ有する榭脂成分と、酸発生剤を含むネガ型レジスト組成物であって、榭脂成分 中のカルボキシル基またはカルボン酸エステル基とアルコール性水酸基とを酸発生 剤から発生する酸の作用によって分子間で反応させることにより、当該榭脂成分をァ ルカリ可溶性カゝら不溶性に変化させるタイプのものも提案されている(例えば、非特 許文献 1〜3、特許文献 2等)。 特許文献 1:特公平 8 - 3635号公報 A negative resist composition containing a resin component having a carboxyl group or a carboxylic acid ester group and an alcoholic hydroxyl group, respectively, and an acid generator, wherein a carboxyl group or a carboxylic acid ester group in the resin component is contained. A type in which the fatty acid component is changed to insoluble by dissolving the fatty acid component into alkali by reacting the alcohol component with an alcoholic hydroxyl group by the action of an acid generated from an acid generator (for example, Non-patent documents 1-3, patent document 2, etc.). Patent Document 1: Japanese Patent Publication No. 8-3635
特許文献 2:特開 2000 - 206694号公報  Patent Document 2: Japanese Patent Application Laid-Open No. 2000-206694
非特許文献 1:ジャーナル ·ォブ ·フォトポリマー ·サイエンス ·アンド ·テクノロジー (J. Photopolym. Sci. Tech.) ,第 10卷,第 4号,第 579〜584ページ(1997年) 非特許文献 2:ジャーナル ·ォブ ·フォトポリマー ·サイエンス ·アンド ·テクノロジー (J. Photopolym. Sci. Tech.) ,第 11卷,第 3号,第 507〜512ページ(1998年) 非特干文献 3: SPIE Advances in Resist Technology and Processing XIV, Vol. 333J, p417〜424(1998)  Non Patent Literature 1: Journal of Photopolymer Science and Technology (J. Photopolym. Sci. Tech.), Vol. 10, No. 4, pp. 579-584 (1997) : Job Photopolym. Sci. Tech., Vol. 11, No. 3, pp. 507-512 (1998) Non-Patent Literature 3: SPIE Advances in Resist Technology and Processing XIV, Vol. 333J, p417-424 (1998)
非特許文献 4 : SPIE Advances in Resist technology and Processing XIX, Vol. 4690, p94- 100(2002)  Non-Patent Document 4: SPIE Advances in Resist technology and Processing XIX, Vol. 4690, p94-100 (2002)
発明の開示  Disclosure of the invention
発明が解決しょうとする課題  Problems to be solved by the invention
[0004] しかしながら、従来の ArFエキシマレーザー用に開発されたネガ型レジスト組成物 にお 、ては、 V、ずれもレジストパターンの膨潤を充分に抑制できな ヽと 、う問題があ る。レジストパターンの膨潤は、 KrFエキシマレーザー、 ArFエキシマレーザー等を 用いる様な微細なパターンの形成を目的とするプロセスにおいては、非常に重要な 問題である。 [0004] However, in the case of a negative resist composition developed for a conventional ArF excimer laser, there is a problem that the swelling of the resist pattern cannot be sufficiently suppressed even in terms of V and deviation. The swelling of the resist pattern is a very important problem in a process for forming a fine pattern such as using a KrF excimer laser or an ArF excimer laser.
[0005] 本発明は前記事情に鑑みてなされたものであって、レジストパターンの膨潤を抑制 できる技術を提供することを課題とする。  The present invention has been made in view of the above circumstances, and has as its object to provide a technique capable of suppressing swelling of a resist pattern.
課題を解決するための手段  Means for solving the problem
[0006] 上記の目的を達成するために、本発明は以下の構成を採用した。 [0006] In order to achieve the above object, the present invention employs the following configurations.
本発明の第一の態様 (aspect)は、フッ素化されたヒドロキシアルキル基を有する脂 環式基を含有する構成単位 (al)と、アクリル酸エステルカゝら誘導される構成単位で あって、水酸基含有脂環式基を含む構成単位 (a2)とを有するレジスト組成物用榭脂 である。  The first aspect (aspect) of the present invention is a structural unit (al) containing an alicyclic group having a fluorinated hydroxyalkyl group, and a structural unit derived from an acrylate ester, wherein a hydroxyl group And a structural unit (a2) containing an alicyclic group.
[0007] 本発明の第二の態様 (aspect)は、(A)本発明の第一の態様のレジスト組成物用榭 脂、(B)露光により酸を発生する酸発生剤成分、および (C)架橋剤成分を含有する ネガ型レジスト糸且成物である。 [0008] 本発明の第三の態様 (aspect)は、本発明の第二の態様のネガ型レジスト組成物を 基板上に塗布し、プリベータし、選択的に露光した後、 PEB (露光後加熱)を施し、ァ ルカリ現像してレジストパターンを形成するレジストパターン形成方法である。 [0007] A second aspect (aspect) of the present invention comprises (A) the resin for a resist composition according to the first aspect of the present invention, (B) an acid generator component which generates an acid upon exposure, and (C) ) It is a negative resist composition containing a crosslinking agent component. [0008] A third aspect of the present invention (aspect) is to apply the negative resist composition of the second aspect of the present invention onto a substrate, pre-beta, and selectively expose, and then perform PEB (post-exposure heating). ), And alkali-developed to form a resist pattern.
[0009] なお、「構成単位」とは、重合体 (榭脂)を構成するモノマー単位を示す。 [0009] The "structural unit" refers to a monomer unit constituting a polymer (resin).
「アクリル酸力 誘導される構成単位」とは、アクリル酸のエチレン性二重結合が開 裂して構成される構成単位を意味する。  "Acrylic acid force-derived structural unit" means a structural unit formed by cleavage of an ethylenic double bond of acrylic acid.
「アクリル酸エステルカゝら誘導される構成単位」とは、アクリル酸エステルのェチレ性 二重結合が開裂して構成される構成単位を意味する。  The “structural unit derived from an acrylate ester” means a structural unit formed by cleavage of an ethylenic double bond of an acrylate ester.
「アクリル酸エステル力 誘導される構成単位」は、 α位の水素原子がアルキル基 等の他の置換基に置換されたものも含む概念とする。なお、「アクリル酸から誘導され る構成単位」、「アクリル酸エステル力 誘導される構成単位」にお 、て、「 α位 位 の炭素原子)」という場合は、特に断りがない限り、カルボキシル基が結合している炭 素原子のことである。  The “acrylic acid ester derived structural unit” is a concept including a compound in which a hydrogen atom at the α-position is substituted with another substituent such as an alkyl group. In the “structural unit derived from acrylic acid” and the “structural unit derived from acrylate ester”, the term “carbon atom at the α-position” refers to a carboxyl group unless otherwise specified. Is the carbon atom to which is bound.
また、「アクリル酸力も誘導される構成単位」は、 α位の炭素原子に結合する水素原 子がアルキル基等の他の置換基に置換された構成単位や、 oc位の炭素原子に水素 原子が結合しているアクリル酸エステルカゝら誘導される構成単位等も含む概念とする また、本特許請求の範囲または明細書においは、「アルキル基」は、特に断りがな い限り、直鎖状、環状または分岐鎖状のアルキル基を包含するものとする。  The “structural unit from which acrylic acid power is also derived” is a structural unit in which the hydrogen atom bonded to the α-position carbon atom is replaced by another substituent such as an alkyl group, or a hydrogen atom is substituted for the oc-position carbon atom. In addition, in the claims or the specification, the term "alkyl group" refers to a linear group unless otherwise specified. , A cyclic or branched alkyl group.
また、「露光」とは光の照射のみならず、電子線の照射等の放射線の照射全体を包 括する概念とする。  “Exposure” is a concept that encompasses not only irradiation of light but also irradiation of radiation such as electron beam irradiation.
発明の効果  The invention's effect
[0010] 本発明においては、レジストパターンの膨潤を抑制できる技術を提供することがで きる。  In the present invention, a technique capable of suppressing swelling of a resist pattern can be provided.
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
[0011] [レジスト組成物用榭脂] [Resin for resist composition]
本発明のレジスト組成物用榭脂は、フッ素化されたヒドロキシアルキル基を有する脂 環式基を含有する構成単位 (al)と、アクリル酸エステルカゝら誘導される構成単位で あって、水酸基含有脂環式基を含む構成単位 (a2)とを有する。 The resin for a resist composition of the present invention comprises a structural unit (al) containing an alicyclic group having a fluorinated hydroxyalkyl group and a structural unit derived from an acrylate ester. And a structural unit (a2) containing a hydroxyl group-containing alicyclic group.
[0012] まず、フッ素化されたヒドロキシアルキル基を有する脂環式基を含有する構成単位 ( al)について説明する。 First, the structural unit (al) containing an alicyclic group having a fluorinated hydroxyalkyl group will be described.
本発明のレジスト組成物用榭脂においては、構成単位 (al)を有することにより、膨 潤抑制の効果が向上する。  In the resin for a resist composition of the present invention, by having the structural unit (al), the effect of suppressing swelling is improved.
[0013] ·フッ素化されたヒドロキシアルキル基を有する脂環式基 [0013] · Alicyclic group having fluorinated hydroxyalkyl group
構成単位 (al)において、脂環式基はフッ素化されたヒドロキシアルキル基を有する フッ素化されたヒドロキシアルキル基は、ヒドロキシ基を有するアルキル基にぉ 、て 、当該アルキル基の水素原子の一部または全部がフッ素によって置換されているも のである。当該基においては、フッ素化によって水酸基の水素原子が遊離しやすくな つている。  In the structural unit (al), the alicyclic group has a fluorinated hydroxyalkyl group. The fluorinated hydroxyalkyl group is different from the alkyl group having a hydroxy group in that a part of hydrogen atoms of the alkyl group Or, all are substituted by fluorine. In such a group, the hydrogen atom of the hydroxyl group is easily released by fluorination.
フッ素化されたヒドロキシアルキル基にぉ 、て、アルキル基は直鎖または分岐鎖状 であり、炭素数は特に限定するものではないが、例えば 1〜20、好ましくは 4〜16とさ れる。水酸基の数は特に限定するものではないが、通常は 1つとされる。  With respect to the fluorinated hydroxyalkyl group, the alkyl group is linear or branched, and the number of carbon atoms is not particularly limited, but is, for example, 1 to 20, preferably 4 to 16. The number of hydroxyl groups is not particularly limited, but is usually one.
中でも、当該アルキル基において、ヒドロキシ基が結合した α位の炭素原子 (ここで はヒドロキシアルキル基の α位の炭素原子を指す)に、フッ素化されたアルキル基ま たはフッ素原子が結合しているもの力、あるいはフッ素化されたアルキル基及びフッ 素原子が結合しているものが好ましい。そして、当該 α位に結合するフッ素化された アルキル基は、アルキル基の水素原子の全部がフッ素で置換されて 、ることが好まし い。  Above all, in the alkyl group, a fluorinated alkyl group or a fluorine atom is bonded to the α-position carbon atom to which the hydroxy group is bonded (here, refers to the α-position carbon atom of the hydroxyalkyl group). It is preferable that the fluorinated alkyl group and the fluorine atom are bonded to each other. The fluorinated alkyl group bonded to the α-position is preferably one in which all of the hydrogen atoms of the alkyl group are substituted with fluorine.
[0014] 脂環式基は単環でも多環でもよ!/、が、多環式基であることが好ま 、。また、脂環 式炭化水素基が好ましい。また、飽和であることが好ましい。また、脂環式基の炭素 数は 5〜 15であることが好まし!/、。  [0014] The alicyclic group may be monocyclic or polycyclic! /, But is preferably a polycyclic group. Further, an alicyclic hydrocarbon group is preferred. Further, it is preferably saturated. Also, the alicyclic group preferably has 5 to 15 carbon atoms! / ,.
[0015] 脂環式基の具体例としては以下のものが挙げられる。  [0015] Specific examples of the alicyclic group include the following.
すなわち、単環式基としてはシクロアルカンから 1個水素原子を除いた基などが挙 げられる。多環式基としては、ビシクロアルカン、トリシクロアルカン、テトラシクロアル カンなどから 1個又は 2個の水素原子を除いた基などが挙げられる。 そして、さらに具体的には、単環式基としては、シクロペンタン、シクロへキサンからThat is, examples of the monocyclic group include groups in which one hydrogen atom has been removed from a cycloalkane. Examples of the polycyclic group include groups in which one or two hydrogen atoms have been removed from bicycloalkane, tricycloalkane, tetracycloalkane, and the like. And, more specifically, as the monocyclic group, cyclopentane, cyclohexane
1個又は 2個の水素原子を除 、た基が挙げられ、シクロへキサンから 2個の水素原子 を除いたが好ましい。 Examples include groups in which one or two hydrogen atoms have been removed, and it is preferred that two hydrogen atoms have been removed from cyclohexane.
多環式基としては、ァダマンタン、ノルボルナン、イソボルナン、トリシクロデカン、テ トラシクロドデカンなどのポリシクロアルカンから 1個又は 2個の水素原子を除いた基 などが挙げられる。  Examples of the polycyclic group include groups in which one or two hydrogen atoms have been removed from a polycycloalkane such as adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane.
なお、この様な多環式基は、例えば ArFエキシマレーザープロセス用のポジ型ホト レジスト組成物用榭脂において、酸解離性溶解抑制基を構成するものとして多数提 案されて!、るものの中力 適宜選択して用いることができる。  A large number of such polycyclic groups have been proposed as constituents of an acid dissociable, dissolution inhibiting group in, for example, a resin for a positive photoresist composition for an ArF excimer laser process! The force can be appropriately selected and used.
これらの中でもシクロへキサン、ァダマンタン、ノルボルナン、テトラシクロドデカンか ら 2個の水素原子を除 、た基が工業上入手しやすく、好ま 、。  Of these, groups obtained by removing two hydrogen atoms from cyclohexane, adamantane, norbornane, and tetracyclododecane are industrially easily available and are preferred.
これら例示した単環式基、多環式基の中でも、特にノルボルナンから 2個の水素原 子を除いた基が好ましい。  Among these monocyclic and polycyclic groups, a group obtained by removing two hydrogen atoms from norbornane is particularly preferable.
[0016] 構成単位 (al)は、アクリル酸力 誘導される構成単位であることが好ましぐアタリ ル酸エステルのエステル基 [— c (o) o— ]に上記脂環式基が結合した構造 (カルボ キシル基の水素原子が上記脂環式基で置換されて 、る構造)が好まし 、。 [0016] The structural unit (al) is preferably a structural unit derived from acrylic acid, and the alicyclic group is bonded to an ester group [—c (o) o—] of an atalylic acid ester. Preferred is a structure (a structure in which a hydrogen atom of a carboxyl group is substituted with the alicyclic group).
[0017] 構成単位 (al)として、より具体的には以下の一般式(1)で表されるものが好ましい As the structural unit (al), more specifically, a unit represented by the following general formula (1) is preferable.
[0018] [化 1] [0018] [Formula 1]
Figure imgf000007_0001
•(1 )
Figure imgf000007_0001
• (1)
(式中、 Rは水素原子、アルキル基、フッ素化アルキル基またはフッ素原子であり、 m 、 n、 pはそれぞれ独立して 1〜5の整数である。 ) (In the formula, R is a hydrogen atom, an alkyl group, a fluorinated alkyl group, or a fluorine atom, and m, n, and p are each independently an integer of 1 to 5.)
[0019] Rは、水素原子、アルキル基、フッ素化アルキル基またはフッ素原子である。 [0019] R is a hydrogen atom, an alkyl group, a fluorinated alkyl group, or a fluorine atom.
アルキル基としては、炭素数 5以下の低級アルキル基が好ましぐ例えばメチル基、 ェチル基、プロピル基、イソプロピル基、 n ブチル基、イソブチル基、 tert-ブチル基 、ペンチル基、イソペンチル基、ネオペンチル基などが挙げられ、メチル基が好まし い。  As the alkyl group, a lower alkyl group having 5 or less carbon atoms is preferable, such as a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, and a neopentyl group. And the like, and a methyl group is preferred.
フッ素化アルキル基は、好ましくは炭素数 5以下の低級アルキル基の水素原子の 1 つ以上がフッ素原子で置換された基である。アルキル基の具体例は上記の説明と同 様である。  The fluorinated alkyl group is preferably a group in which one or more hydrogen atoms of a lower alkyl group having 5 or less carbon atoms are substituted with a fluorine atom. Specific examples of the alkyl group are the same as those described above.
フッ素原子で置換される水素原子は、アルキル基を構成する水素原子の一部でも よいし、全部でもよい。  The hydrogen atom substituted with a fluorine atom may be a part of the hydrogen atoms constituting the alkyl group or all of them.
Rにおいて、好ましいのは水素原子またはアルキル基であり、特に水素原子または メチル基が好ましく、水素原子であることが最も好ま 、。  In R, a hydrogen atom or an alkyl group is preferred, a hydrogen atom or a methyl group is particularly preferred, and a hydrogen atom is most preferred.
また、 n、 m、 pはそれぞれ 1であることが好ましい。  Further, n, m, and p are each preferably 1.
[0020] 一般式(1)で表されるものの中でも、 α , α ' ビス (トリフルォロメチル) ビシク 口〔2. 2. 1〕ヘプター 5 ェンー2 エタノールアタリレート(下記 [ィ匕 7]に示すモノマ 一から誘導される構成単位)は、効果の点、及び合成が容易で、かつ高エッチング耐 性が得られる点からも好ま ヽ。 [0020] Among the compounds represented by the general formula (1), α, α'bis (trifluoromethyl) bis [2.2.1] hepter 5 ene-2 ethanol acrylate (see the following [I-Dai 7]) The structural units derived from the monomers shown) are effective, easy to synthesize, and have high etching resistance. It is also preferable from the point that the property can be obtained.
[0021] 構成単位 (al)は 1種または 2種以上を混合して用いることができる。 The structural unit (al) can be used alone or as a mixture of two or more.
[0022] 次に、アクリル酸エステルカゝら誘導される構成単位であって、水酸基含有脂環式基 を含む構成単位 (a2)について説明する。 Next, a structural unit (a2) derived from an acrylate ester and containing a hydroxyl group-containing alicyclic group will be described.
本発明のレジスト組成物用榭脂においては、構成単位 (a2)を含むことにより、膨潤 抑制の効果が向上する。また、エッチング耐性向上の効果が得られる。 In the resin for resist compositions of the present invention, the effect of suppressing swelling is improved by including the structural unit ( a2 ). Further, the effect of improving the etching resistance can be obtained.
本発明のレジスト組成物用榭脂をネガ型レジスト組成物に配合すると、当該構成単 位 (a2)の水酸基 (アルコール性水酸基) iS (B)酸発生剤から発生する酸の作用に よって、(C)架橋剤と反応し、これにより当該レジスト組成物用榭脂がアルカリ現像液 に対して可溶性の性質力 不溶性の性質に変化する。  When the resin for a resist composition of the present invention is blended into a negative resist composition, the hydroxyl group (alcoholic hydroxyl group) iS (B) of the constituent unit (a2) is acted upon by the action of the acid generated from the acid generator to produce ( C) Reacts with the cross-linking agent, whereby the resin for resist composition changes into a property of being soluble in an alkali developer to a property of being insoluble.
[0023] 構成単位 (a2)にお ヽて、水酸基含有脂環式基は、アクリル酸エステルのエステル 基( - C (O) O—)に結合して 、ることが好ま 、。 [0023] In the structural unit (a2), the hydroxyl group-containing alicyclic group is preferably bonded to an ester group (-C (O) O-) of an acrylate ester.
[0024] なお、構成単位 (a2)において、 α位( α位の炭素原子)には、水素原子にかわつ て、他の置換基が結合していてもよい。置換基としては、好ましくはアルキル基、フッ 素化アルキル基、またはフッ素原子が挙げられる。 In the structural unit (a2), another substituent may be bonded to the α-position (the carbon atom at the α-position) instead of a hydrogen atom. The substituent preferably includes an alkyl group, a fluorinated alkyl group, and a fluorine atom.
これらの説明は上記構成単位 (al)の一般式(1)中の Rの説明と同様であって、 (X 位に結合可能なもののうち、好ましいのは水素原子またはアルキル基であって、特に 水素原子またはメチル基が好ましく、最も好ま U、のは水素原子である。  These descriptions are the same as the description of R in the general formula (1) of the structural unit (al). (Of those capable of bonding at the X position, preferred is a hydrogen atom or an alkyl group, A hydrogen atom or a methyl group is preferred, and most preferably U is a hydrogen atom.
[0025] また、水酸基含有脂環式基とは、脂環式基に水酸基が結合している基である。 [0025] The hydroxyl group-containing alicyclic group is a group in which a hydroxyl group is bonded to an alicyclic group.
水酸基は例えば 1〜3個結合していることが好ましぐさらに好ましくは 1個である。 また、脂環式基には炭素数 1〜4のアルキル基が結合して 、てもよ 、。  The number of hydroxyl groups is preferably, for example, one to three, more preferably one. Further, an alkyl group having 1 to 4 carbon atoms may be bonded to the alicyclic group.
[0026] ここで、脂環式基は単環でも多環でもよ!/、が、多環式基であることが好ま U、。またHere, the alicyclic group may be monocyclic or polycyclic! /, But is preferably a polycyclic group. Also
、脂環式炭化水素基が好ましい。また、飽和であることが好ましい。また、脂環式基の 炭素数は 5〜 15であることが好まし 、。 And an alicyclic hydrocarbon group. Further, it is preferably saturated. The alicyclic group preferably has 5 to 15 carbon atoms.
[0027] 脂環式基の具体例としては以下のものが挙げられる。 [0027] Specific examples of the alicyclic group include the following.
すなわち、単環式基としてはシクロアルカンから 1個水素原子を除いた基などが挙 げられる。多環式基としては、ビシクロアルカン、トリシクロアルカン、テトラシクロアル カンなどから 1個の水素原子を除いた基などが挙げられる。 そして、さらに具体的には、単環式基としては、シクロペンタン、シクロへキサンからThat is, examples of the monocyclic group include groups in which one hydrogen atom has been removed from a cycloalkane. Examples of the polycyclic group include groups obtained by removing one hydrogen atom from bicycloalkane, tricycloalkane, tetracycloalkane, and the like. And, more specifically, as the monocyclic group, cyclopentane, cyclohexane
1個の水素原子を除 、た基が挙げられ、シクロへキシル基が好ま 、。 A group excluding one hydrogen atom is preferred, and a cyclohexyl group is preferred.
多環式基としては、ァダマンタン、ノルボルナン、イソボルナン、トリシクロデカン、テ トラシクロドデカンなどのポリシクロアルカンから 1個の水素原子を除いた基などが挙 げられる。  Examples of polycyclic groups include groups in which one hydrogen atom has been removed from polycycloalkanes such as adamantan, norbornane, isobornane, tricyclodecane, and tetracyclododecane.
なお、この様な多環式基は、例えば ArFエキシマレーザープロセス用のポジ型ホト レジスト組成物用榭脂において、酸解離性溶解抑制基を構成するものとして多数提 案されて!、るものの中力 適宜選択して用いることができる。  A large number of such polycyclic groups have been proposed as constituents of an acid dissociable, dissolution inhibiting group in, for example, a resin for a positive photoresist composition for an ArF excimer laser process! The force can be appropriately selected and used.
これらの中でもシクロへキシル基、ァダマンチル基、ノルボルニル基、テトラシクロド デ力-ル基が工業上入手しやすぐ好ましい。  Among these, a cyclohexyl group, an adamantyl group, a norbornyl group, and a tetracyclododele group are industrially available and readily preferred.
これら例示した単環式基、多環式基の中でも、シクロへキシル基、ァダマンチル基が 好ましぐ特にァダマンチル基が好ましい。  Among these exemplified monocyclic and polycyclic groups, a cyclohexyl group and an adamantyl group are preferred, and an adamantyl group is particularly preferred.
[0028] 構成単位 (a2)の具体例として、例えば下記一般式(2)で表される構成単位が好ま しい。 As a specific example of the structural unit (a2), for example, a structural unit represented by the following general formula (2) is preferable.
[0029] [化 2] [0029] [Formula 2]
Figure imgf000009_0001
Figure imgf000009_0001
(Rは水素原子、アルキル基、フッ素化アルキル基またはフッ素原子であり、 qは 1〜3 の整数である。 ) (R is a hydrogen atom, an alkyl group, a fluorinated alkyl group or a fluorine atom, and q is an integer of 1-3.)
[0030] Rは、 α位に結合する水素原子、アルキル基、フッ素化アルキル基、またはフッ素 原子であり、上記一般式(1)の説明と同様である。一般式 (2)において、 Rは水素原 子であることが最も好まし!/、。  R is a hydrogen atom, an alkyl group, a fluorinated alkyl group, or a fluorine atom bonded to the α-position, and is the same as described in the general formula (1). In the general formula (2), R is most preferably a hydrogen atom! / ,.
また、 qは 1〜3の整数である力 1であることが好ましい。 また、水酸基の結合位置は特に限定しないが、ァダマンチル基の 3位の位置に結 合していることが好ましい。 Also, q is preferably a force 1 which is an integer of 1 to 3. The bonding position of the hydroxyl group is not particularly limited, but is preferably bonded to the 3-position of the adamantyl group.
[0031] 構成単位 (a2)は 1種または 2種以上を混合して用いることができる。 The structural unit (a2) can be used alone or as a mixture of two or more.
[0032] 次に、アクリル酸力も誘導され、かつ環式構造を有しない構成単位であって、側鎖に アルコール性水酸基を有する構成単位 (a3)につ ヽて説明する。 本発明のレジスト 組成物用榭脂においては、構成単位 (al)、構成単位 (a2)に加えて、アクリル酸から 誘導され、かつ環式構造を有しない構成単位であって、側鎖にアルコール性水酸基 を有する構成単位 (a3)を有することが好ま 、。 [0032] Next, also induced acrylate force, and a structural unit having no cyclic structure, the structural unit having an alcoholic hydroxyl group in the side chain (a 3) is described Te Nitsuヽ. In the resin for a resist composition of the present invention, in addition to the structural unit (al) and the structural unit (a2), a structural unit derived from acrylic acid and having no cyclic structure, and having an alcohol in a side chain. It preferably has a structural unit (a3) having a hydroxyl group.
このような構成単位 (a3)を有することにより、解像性向上の効果が得られる。また、 膜減りが抑制できる。また、パターン形成時の架橋反応の制御性が良好となる。さら に、膜密度が向上する傾向がある。これにより、耐熱性が向上する傾向がある。さらに はエッチング耐性も向上する。  By having such a structural unit (a3), an effect of improving resolution can be obtained. In addition, film loss can be suppressed. Further, the controllability of the crosslinking reaction at the time of pattern formation is improved. Furthermore, the film density tends to increase. Thereby, the heat resistance tends to be improved. Further, the etching resistance is improved.
[0033] 「環式構造を有しな!/、」とは、脂環式基や芳香族基を有しな!/、ことを意味する。  [0033] The expression "has no cyclic structure! /" Means "having no alicyclic group or aromatic group!".
構成単位 (a3)は、環式構造を有しないことにより、構成単位 (a2)と明らかに区別さ れる。構成単位 (a3)を有するレジスト組成物用榭脂をネガ型レジスト組成物に配合 すると、上述の構成単位 (a2)の水酸基とともに、当該構成単位 (a3)のヒドロキシアル キル基の水酸基が、(B)酸発生剤から発生する酸の作用によって、(C)架橋剤と反 応し、これにより当該レジスト組成物用榭脂がアルカリ現像液に対して可溶性の性質 力 不溶性の性質に変化する。  The structural unit (a3) is clearly distinguished from the structural unit (a2) by not having a cyclic structure. When the resin for a resist composition having the structural unit (a3) is blended into a negative resist composition, the hydroxyl group of the structural unit (a3) and the hydroxyl group of the hydroxyalkyl group of the structural unit (a3) are changed to ( The action of the acid generated from the acid generator (B) reacts with the cross-linking agent (C), whereby the resin for resist composition changes to a property soluble in an alkali developer to a property insoluble in an alkali developer.
[0034] 「側鎖にアルコール性水酸基を有する」とは、例えばヒドロキシアルキル基が結合し て 、る構成単位が挙げられる。  [0034] The phrase "having an alcoholic hydroxyl group in the side chain" includes, for example, structural units having a hydroxyalkyl group bonded thereto.
ヒドロキシアルキル基は、例えば主鎖 (アクリル酸のエチレン性 2重結合が開裂した 部分)の α位の炭素原子に結合していてもよいし、アクリル酸のカルボキシル基の水 素原子と置換してエステルを構成していてもよぐ構成単位 (a3)において、これらのう ち少なくとも 1方ある 、は両方が存在して 、ることが好ま 、。  The hydroxyalkyl group may be bonded, for example, to the α-position carbon atom of the main chain (the portion where the ethylenic double bond of acrylic acid is cleaved), or may be substituted with a hydrogen atom of the carboxyl group of acrylic acid. In the structural unit (a3) which may form an ester, it is preferable that at least one of these is present and both are present.
[0035] なお、 α位にヒドロキシアルキル基が結合していない場合、 α位の炭素原子には、 水素原子にかわって、アルキル基、フッ素化アルキル基、またはフッ素原子が結合し ていてもよい。これらについては一般式(1)中の Rの説明と同様である。 [0036] また、構成単位 (a3)は、下記一般式(3)で表されるものであると好まし 、。 When a hydroxyalkyl group is not bonded to the α-position, an alkyl group, a fluorinated alkyl group, or a fluorine atom may be bonded to the carbon atom at the α-position instead of a hydrogen atom. . These are the same as described for R in the general formula (1). The structural unit (a3) is preferably represented by the following general formula (3).
[0037] [化 3] [0037] [Formula 3]
Figure imgf000011_0001
Figure imgf000011_0001
(式中、 R1は水素原子、アルキル基、フッ素化アルキル基、フッ素原子またはヒドロキ シアルキル基であり、 R2は、水素原子、アルキル基、またはヒドロキシアルキル基であ り、かつ 、 R2の少なくとも一方はヒドロキシアルキル基である。 ) (In the formula, R 1 is a hydrogen atom, an alkyl group, fluorinated alkyl group, a fluorine atom or a hydroxy Shiarukiru group, R 2 represents a hydrogen atom, an alkyl group or hydroxyalkyl group der, is, and, the R 2 At least one is a hydroxyalkyl group.)
[0038] R1において、ヒドロキシアルキル基は、好ましくは炭素数が 10以下の低級ヒドロキシ アルキル基であり、更に好ましくは炭素数 2〜8の低級ヒドロキシアルキル基であり、 最も好ましくはヒドロキシメチル基又はヒドロキシェチル基である。水酸基の数、結合 位置は特に限定するものではないが、通常は 1つであり、また、アルキル基の末端に 結合していることが好ましい。 In [0038] R 1, hydroxyalkyl group, preferably a lower hydroxyalkyl group of not more than 10 carbon atoms, more preferably a lower hydroxyalkyl group having 2 to 8 carbon atoms, and most preferably a hydroxymethyl group, or It is a hydroxyethyl group. The number and the bonding position of the hydroxyl group are not particularly limited, but are usually one, and it is preferable that the hydroxyl group is bonded to the terminal of the alkyl group.
R1において、アルキル基は、好ましくは炭素数が 10以下の低級アルキル基であり、 更に好ましくは炭素数 2〜8の低級アルキル基であり、最も好ましくはェチル基、メチ ル基である。 In R 1, the alkyl group is preferably a lower alkyl group of not more than 10 carbon atoms, more preferably a lower alkyl group having 2 to 8 carbon atoms, most preferably Echiru group, a methylation group.
R1において、フッ素化アルキル基は、好ましくは炭素数が 5以下の低級アルキル基 (好ましくはェチル基、メチル基)において、その水素原子の一部または全部がフッ素 で置換された基である。 In R 1, the fluorinated alkyl group is preferably a carbon number of 5 or less lower alkyl group (preferably Echiru group, a methyl group) in which part or all of the hydrogen atoms are substituted with fluorine groups.
R2において、アルキル基、ヒドロキシアルキル基は、 R1と同様である。 In R 2, an alkyl group, hydroxyalkyl group, are similar to those for R 1.
[0039] 構成単位 (a3)としては、具体的には、 α - (ヒドロキシアルキル)アクリル酸力 誘 導される構成単位、 a - (ヒドロキシアルキル)アクリル酸アルキルエステル力 誘導さ れる構成単位、(α—アルキル)アクリル酸ヒドロキシアルキルエステル力 誘導される 構成単位が挙げられる。 As the structural unit (a3), specifically, a structural unit derived from α- (hydroxyalkyl) acrylic acid, a structural unit derived from a- (hydroxyalkyl) acrylic acid, and ( (α-alkyl) acrylic acid hydroxyalkyl ester power Structural unit derived.
中でも、構成単位 (a3)が、効果向上の点及び膜密度が向上の点から、 a - (ヒドロ キシアルキル)アクリル酸アルキルエステルカゝら誘導される構成単位を含むと好まし い。そして、中でも a (ヒドロキシメチル) アクリル酸ェチルエステル又は α (ヒド 口キシメチル)—アクリル酸メチルエステル力も誘導される構成単位が好ま U、。 Above all, the structural unit (a3) is a-(hydro) from the viewpoint of improving the effect and improving the film density. It is preferable to include a constitutional unit derived from an (xyalkyl) alkyl acrylate ester. And, among them, a (hydroxymethyl) acrylate ester or α (hydroxymethyl) -acrylate is also preferred.
また、構成単位(a3)力 ( a アルキル)アクリル酸ヒドロキシアルキルエステルから 誘導される構成単位を含むと好ましい。そして、中でも、 a—メチル一アクリル酸ヒドロ キシェチルエステル又は α—メチルーアクリル酸ヒドロキシメチルエステルから誘導さ れる構成単位が好ましい。 Further, it is preferable to include a structural unit derived from the structural unit (a3) hydroxyalkyl (acrylate). Of these, a structural unit derived from a-methyl-acrylic acid hydroxyethyl ester or α -methyl-acrylic acid hydroxymethyl ester is preferable.
[0040] 構成単位 (a3)は 1種または 2種以上を混合して用いることができる。 [0040] The structural unit (a3) can be used alone or in combination of two or more.
[0041] 次に、ラタトン含有単環または多環式基を含むアクリル酸エステルから誘導される構 成単位 (a4)について説明する。 Next, the structural unit (a4) derived from an acrylate ester containing a rataton-containing monocyclic or polycyclic group will be described.
本発明のレジスト組成物用榭脂においては、構成単位 (al)、及び構成単位 (a2) に加えて、さら〖こ、ラタトン含有単環または多環式基を含むアクリル酸エステルから誘 導される構成単位 (a4)を有することが好ま U、。 In the resin for a resist composition of the present invention, in addition to the structural unit (al) and the structural unit ( a2 ), the resin is derived from an acrylic acid ester containing a monocyclic or polycyclic group containing ratatotone. U, which preferably has the structural unit (a4)
また、本発明のレジスト組成物用榭脂においては、構成単位 (al)、構成単位 (a2) Further, in the resin for resist composition of the present invention, the structural unit (al), the structural unit (a2)
、及び構成単位 (a4)に加えて、さらに構成単位 (a3)を組み合せて用いても良い。 In addition to the structural unit (a4), the structural unit (a3) may be used in combination.
[0042] 構成単位 (a4)のラタトン含有単環または多環式基は、レジスト膜の形成に用いた場 合に、レジスト膜の基板への密着性を高めたり、現像液との親水性を高めたりするう えで有効なものである。また、膨潤抑制の効果が向上する。 When used for forming a resist film, the rataton-containing monocyclic or polycyclic group of the structural unit (a4) enhances the adhesion of the resist film to the substrate or increases the hydrophilicity with the developer. It is effective because it can be raised. In addition, the effect of suppressing swelling is improved.
[0043] なお、ここでのラタトンとは、 -O -C (O)—構造を含むひとつの環を示し、これをひ とつの目の環として数える。したがって、ラタトン環のみの場合は単環式基、さらに他 の環構造を有する場合は、その構造に関わらず多環式基と称する。 [0043] Note that rataton here refers to one ring including a -O-C (O)-structure, which is counted as one eye ring. Therefore, when only a rataton ring is used, it is called a monocyclic group, and when it has another ring structure, it is called a polycyclic group regardless of its structure.
[0044] 構成単位 (a4)としては、このようなエステルの構造(-O -C (O)―)と環構造とを 共に有するラタトン環を持てば、特に限定されることなく任意のものが使用可能である The structural unit (a4) is not particularly limited as long as it has a rataton ring having both the ester structure (—O—C (O) —) and a ring structure. Can be used
[0045] 具体的には、ラタトン含有単環式基としては、 γ プチ口ラタトン力 水素原子 1つ を除いた基が挙げられる。ラタトン含有多環式基としては、ラタトン環を有するビシクロ アルカン、トリシクロアルカン、テトラシクロアルカン力も水素原子一つを除いた基が挙 げられる。 特に、以下のような構造式を有するラタトン含有トリシクロアルカン力 水素原子を 1 つを除 、た基が、工業上入手し易!、などの点で有利である。 [0045] Specifically, examples of the ratatone-containing monocyclic group include groups excluding one γ-petit rataton force hydrogen atom. Examples of the rataton-containing polycyclic group include a bicycloalkane, a tricycloalkane, and a tetracycloalkane having a rataton ring, in which one hydrogen atom is excluded. In particular, groups excluding one ratatotone-containing tricycloalkane hydrogen atom having the following structural formula are advantageous in terms of industrial availability, and the like.
[化 4]  [Formula 4]
Figure imgf000013_0001
Figure imgf000013_0001
[0047] また、構成単位 (a4)においては、ラタトン含有多環式基であるものが好ましぐ中で もノルボルナンラタトンを有するものが好まし 、。 [0047] Further, as the structural unit (a4), those having a norbornane rataton are preferable among those which are a rataton-containing polycyclic group, and the like.
[0048] 構成単位 (a4)において、 α位( α位の炭素原子)には、水素原子にかわって、他 の置換基が結合していてもよい。置換基としては、好ましくはアルキル基、フッ素化ァ ルキル基、またはフッ素原子が挙げられる。  [0048] In the structural unit (a4), another substituent may be bonded to the α-position (the carbon atom at the α-position) instead of a hydrogen atom. The substituent preferably includes an alkyl group, a fluorinated alkyl group, or a fluorine atom.
これらの説明は上記構成単位 (al)の一般式(1)中の Rの説明と同様であって、 (X 位に結合可能なもののうち、好ましいのは水素原子またはアルキル基であって、特に 水素原子またはメチル基が好ましく、最も好ま U、のは水素原子である。  These descriptions are the same as the description of R in the general formula (1) of the structural unit (al). (Of those capable of bonding at the X position, preferred is a hydrogen atom or an alkyl group, A hydrogen atom or a methyl group is preferred, and most preferably U is a hydrogen atom.
[0049] 構成単位 (a4)の例として、より具体的には、下記一般式 (a4— l)〜(a4— 5)で表 される構成単位が挙げられる。 More specifically, examples of the structural unit (a4) include structural units represented by the following general formulas (a4-1) to (a4-5).
Figure imgf000014_0001
Figure imgf000014_0001
(a4-2) (a4-3)  (a4-2) (a4-3)
Figure imgf000014_0002
Figure imgf000014_0002
(a4-4) a4-5  (a4-4) a4-5
(式中、 Rは前記と同じである。 R'はそれぞれ独立して水素原子、アルキル基、また は炭素数 1〜5のアルコキシ基であり、 mは 0または 1の整数である。 ) (In the formula, R is the same as described above. R ′ is each independently a hydrogen atom, an alkyl group, or an alkoxy group having 1 to 5 carbon atoms, and m is an integer of 0 or 1.)
[0051] 一般式 (a4— l)〜(a4— 5)における R'のアルキル基としては、前記構成単位 (al) における Rのアルキル基と同じである。一般式(a4—l)〜(a4— 5)中、 R'は、工業上 入手が容易であること等を考慮すると、水素原子が好ましい。 The alkyl group of R ′ in the general formulas (a4-1) to (a4-5) is the same as the alkyl group of R in the structural unit (al). In the general formulas (a4-1) to (a4-5), R ′ is preferably a hydrogen atom in view of industrial availability.
[0052] そして、構成単位 (a4)としては、一般式 (a4— 2)〜(a4— 3)で表される単位が最も 好ましい。 As the structural unit (a4), the units represented by general formulas (a4-2) to (a4-3) are most preferable.
[0053] 構成単位 (a4)としては、 1種を単独で用いてもよぐ 2種以上を組み合わせて用い てもよい。  As the structural unit (a4), one type may be used alone, or two or more types may be used in combination.
[0054] 構成単位 (al)乃至構成単位 (a4)の組み合わせ  [0054] Combination of structural units (al) to (a4)
本発明においては、構成単位 (al)乃至構成単位 (a4)は、例えば以下の様に 4種 類の組み合わせを選択する様にすると好ま ヽ。  In the present invention, the structural units (al) to (a4) are preferably selected from, for example, four types of combinations as described below.
[0055] (i)構成単位 (al)と構成単位 (a2)の組み合わせを含む様に選択する。 このとき、構成単位 (al)が一般式(1)で表される構成単位であり、かつ一般式(1) 中の Rが水素原子であることが好ましい。そして、これと同時に、構成単位 (a2)の α 位 (カルボキシル基が結合した炭素原子)に水素原子が結合して 、ることが好ま 、 。その理由は、溶解コントラストが良好となるためである。 (I) Selection is made to include a combination of the structural unit (al) and the structural unit (a2). At this time, it is preferable that the structural unit (al) is a structural unit represented by the general formula (1), and R in the general formula (1) is a hydrogen atom. At the same time, a hydrogen atom is preferably bonded to the α-position (carbon atom to which a carboxyl group is bonded) of the structural unit (a2). The reason is that the dissolution contrast is improved.
[0056] (ii)構成単位 (al)、構成単位 (a2)、及び構成単位 (a3)の組み合わせを含む様に 選択する。 (Ii) The selection is made to include a combination of the structural unit (al), the structural unit (a2), and the structural unit (a3).
このとき、構成単位 (al)が一般式(1)で表される構成単位であり、かつ一般式(1) 中の Rが水素原子であることが好ましい。そして、これと同時に、構成単位 (a2)の α 位に水素原子が結合していることが好ましい。その理由は、溶解コントラストが良好と なるためである。  At this time, it is preferable that the structural unit (al) is a structural unit represented by the general formula (1), and that R in the general formula (1) is a hydrogen atom. At the same time, it is preferable that a hydrogen atom be bonded to the α-position of the structural unit (a2). The reason is that the dissolution contrast becomes better.
[0057] (iii)構成単位 (al)、構成単位 (a2)、及び構成単位 (a4)の組み合わせを含む様に 選択する。  (Iii) The selection is made to include a combination of the structural unit (al), the structural unit (a2), and the structural unit (a4).
このとき、構成単位 (al)が一般式(1)で表される構成単位であり、かつ一般式(1) 中の Rが水素原子であることが好ましい。そして、これと同時に、構成単位 (a2)の α 位に水素原子が結合しており、かつ構成単位 (a4)の a位に水素原子が結合してい ることが好ましい。  At this time, it is preferable that the structural unit (al) is a structural unit represented by the general formula (1), and R in the general formula (1) is a hydrogen atom. At the same time, a hydrogen atom is preferably bonded to the α-position of the structural unit (a2), and a hydrogen atom is preferably bonded to the a-position of the structural unit (a4).
その理由は、溶解コントラストが良好となるためである。  The reason is that the dissolution contrast is improved.
[0058] (iv)構成単位 (al)、構成単位 (a2)、構成単位 (a3)、及び構成単位 (a4)の組み合 わせを含む様に選択する。 (Iv) The selection is made to include a combination of the structural unit (al), the structural unit (a2), the structural unit (a3), and the structural unit (a4).
このとき、構成単位 (al)が一般式(1)で表される構成単位であり、かつ一般式(1) 中の Rが水素原子であることが好ましい。そして、これと同時に、構成単位 (a2)の α 位に水素原子が結合しており、かつ構成単位 (a4)の a位に水素原子が結合してい ることが好ましい。  At this time, it is preferable that the structural unit (al) is a structural unit represented by the general formula (1), and R in the general formula (1) is a hydrogen atom. At the same time, a hydrogen atom is preferably bonded to the α-position of the structural unit (a2), and a hydrogen atom is preferably bonded to the a-position of the structural unit (a4).
その理由は、溶解コントラストが良好となるためである。  The reason is that the dissolution contrast is improved.
[0059] 構成単位 (al)〜構成単位 (a4)の割合 [0059] Ratio of structural unit (al) to structural unit (a4)
本発明にお 、ては、構成単位 (al)乃至構成単位 (a4)を組み合わせるにお 、て、 上述の様に (i)、 (ii) , (iii) , (iv)に分類される 4種類の組み合わせを選択する様に すると好ましい。そこで、これらについて、以下にそれぞれ好ましい各構成単位の割 合を示す。 In the present invention, when the structural units (al) to (a4) are combined, they are classified into (i), (ii), (iii), and (iv) as described above. It is preferable to select a combination of the types. Therefore, the following is a description of the preferred constitutional units. Indicates a match.
(i)構成単位 (al)と構成単位 (a2)の組み合わせ  (i) Combination of structural unit (al) and structural unit (a2)
少なくとも構成単位 (al)と構成単位 (a2)の 2つを必須とし、好ましくはこれら 2つの 構成単位カゝらなる榭脂である場合、榭脂中の各構成単位の割合は以下の数値範囲 を満足することが好ましい。  At least two of the structural unit (al) and the structural unit (a2) are essential. Preferably, when the resin is composed of these two structural units, the ratio of each structural unit in the resin is in the following numerical range. Is preferably satisfied.
すなわち、構成単位 (al)の割合は好ましくは 20〜80モル%、さらに好ましくは 30 〜70モル0 /0であり、最も好ましくは 35〜55モル0 /0である。 That is, the proportion of the structural unit (al) is preferably 20 to 80 mol%, more preferably 30 to 70 mole 0/0, and most preferably 35 to 55 mole 0/0.
構成単位(a2)の割合は、好ましくは 20〜80モル0 /0、さらに好ましくは 30〜70モル %であり、最も好ましくは 35〜55モル0 /0である。 The proportion of the structural unit (a2) is preferably 20 to 80 mole 0/0, more preferably 30 to 70 mol%, and most preferably 35 to 55 mole 0/0.
これらの範囲を満足することにより膨潤抑制の効果が向上する。  By satisfying these ranges, the effect of suppressing swelling is improved.
[0060] (ii)構成単位 (al)、構成単位 (a2)、及び構成単位 (a3)の組み合わせ [0060] (ii) Combination of structural unit (al), structural unit (a2), and structural unit (a3)
構成単位 (al)、構成単位 (a2)、及び構成単位 (a3)を有する榭脂であり、好ましく はこれらの構成単位カゝらなる榭脂である場合、榭脂中の各構成単位の割合は以下の 数値範囲を満足することが好まし ヽ。  It is a resin having the structural unit (al), the structural unit (a2), and the structural unit (a3), preferably, when the resin is composed of these structural units, the ratio of each structural unit in the resin Satisfies the following numerical range ヽ.
すなわち、構成単位 (al)の割合は、好ましくは 20〜80モル%、さらに好ましくは 3 0〜70モル0 /0であり、最も好ましくは 35〜55モル0 /0である。 That is, the proportion of the structural unit (al) is preferably 20 to 80 mol%, more preferably from 3 0 to 70 mole 0/0, and most preferably 35 to 55 mole 0/0.
構成単位(a2)の割合は好ましくは 10〜70モル0 /0、さらに好ましくは 10〜50モル %、さらに好ましくは 20〜40モル0 /0である。 The proportion of the structural unit (a2) is preferably 10 to 70 mole 0/0, more preferably 10 to 50 mol%, more preferably from 20 to 40 mole 0/0.
構成単位(a3)の割合は、好ましくは 10〜70モル0 /0、さらに好ましくは 10〜40モル %、最も好ましくは 15〜35モル0 /0である。 The proportion of the structural unit (a3) is preferably 10 to 70 mole 0/0, more preferably 10 to 40 mol%, and most preferably 15 to 35 mole 0/0.
これらの範囲を満足することにより膨潤抑制の効果が向上する。そして、特に構成 単位 (a2)と構成単位 (a3)とをバランスよく配合することによって、適度なコントラスト が得られ、解像性が向上する。また、エッチング耐性が向上する。さらに良好な露光 余裕度が得られる。  By satisfying these ranges, the effect of suppressing swelling is improved. In particular, by blending the structural unit (a2) and the structural unit (a3) in a well-balanced manner, an appropriate contrast is obtained and the resolution is improved. Further, etching resistance is improved. A better exposure latitude can be obtained.
[0061] (iii)構成単位 (al)、構成単位 (a2)、構成単位 (a4)の組み合わせ [0061] (iii) Combination of structural unit (al), structural unit (a2), and structural unit (a4)
構成単位 (al)、(a2)、(a4)を有する榭脂であり、好ましくはこれらの構成単位から なる榭脂である場合、榭脂中の各構成単位の割合は以下の数値範囲を満足すること が好ましい。 すなわち、構成単位 (al)の割合は、好ましくは 20〜85モル%、さらに好ましくは 3 0〜70モル0 /0であり、最も好ましくは 35〜50モル0 /0である。 A resin having the structural units (al), (a2) and (a4), and preferably a resin comprising these structural units, the ratio of each structural unit in the resin satisfy the following numerical range. It is preferable to do so. That is, the proportion of the structural unit (al) is preferably 20 to 85 mol%, more preferably 3 0-70 mole 0/0, and most preferably 35 to 50 mole 0/0.
構成単位(a2)の割合は好ましくは 14〜70モル0 /0、さらに好ましくは 15〜50モル %であり、最も好ましくは 30〜50モル0 /0である。 The proportion of the structural unit (a2) is preferably 14 to 70 mole 0/0, more preferably 15 to 50 mol%, and most preferably from 30 to 50 mole 0/0.
構成単位 (a4)の割合は、好ましくは 1〜70モル0 /0、さらに好ましくは 3〜50モル% であり、最も好ましくは 5〜20モル%である。 The proportion of the structural unit (a4) is preferably 1 to 70 mol 0/0, more preferably 3 to 50 mol%, and most preferably 5 to 20 mol%.
これらの範囲を満足することにより膨潤抑制の効果が向上する。また、レジストバタ ーン形状が良好となる。  By satisfying these ranges, the effect of suppressing swelling is improved. In addition, the shape of the resist pattern is improved.
また、 (al) , (a2)及び (a4)をバランスよく配合することによって、適度なコントラスト が得られ、解像性が向上する。また、エッチング耐性が向上する。さらに良好な露光 余裕度が得られる。  Also, by blending (al), (a2) and (a4) in a well-balanced manner, an appropriate contrast is obtained and the resolution is improved. Further, etching resistance is improved. A better exposure latitude can be obtained.
(iv)構成単位 (al)、構成単位 (a2)、構成単位 (a3)、及び構成単位 (a4)の組み合 わせ (iv) Combination of structural unit (al), structural unit (a2), structural unit (a3), and structural unit (a4)
構成単位 (al)乃至構成単位 (a4)を全て有する榭脂であり、好ましくはこれらの構 成単位カゝらなる榭脂である場合、榭脂中の各構成単位の割合は以下の数値範囲を 満足することが好ましい。  It is a resin having all of the structural units (al) to (a4), and preferably a resin composed of these structural units, the ratio of each structural unit in the resin is in the following numerical range. It is preferable to satisfy the following.
すなわち、構成単位 (al)の割合は、好ましくは 10〜85モル%、さらに好ましくは 2 0〜70モル0 /0であり、最も好ましくは 25〜50モル0 /0である。 That is, the proportion of the structural unit (al) is preferably 10 to 85 mol%, more preferably from 2 0 to 70 mole 0/0, and most preferably 25 to 50 mole 0/0.
構成単位(a2)の割合は好ましくは 10〜80モル0 /0、さらに好ましくは 20〜70モル %であり、最も好ましくは 30〜50モル0 /0である。 The proportion of the structural unit (a2) is preferably 10 to 80 mole 0/0, more preferably 20 to 70 mol%, and most preferably from 30 to 50 mole 0/0.
構成単位 (a3)の割合は、好ましくは 4〜70モル%、さらに好ましくは 7〜50モル% であり、最も好ましくは 10〜30モル0 /0である。 The proportion of the structural unit (a3) is preferably 4 to 70 mol%, more preferably 7 to 50 mol%, and most preferably 10 to 30 mole 0/0.
構成単位 (a4)の割合は、好ましくは 1〜70モル0 /0、さらに好ましくは 3〜50モル% であり、最も好ましくは 5〜20モル%である。 The proportion of the structural unit (a4) is preferably 1 to 70 mol 0/0, more preferably 3 to 50% by mole, and most preferably 5 to 20% by mole.
これらの範囲を満足することにより膨潤抑制の効果がさらに向上する。また、レジスト パターン形状が良好となる。  By satisfying these ranges, the effect of suppressing swelling is further improved. Also, the resist pattern shape becomes good.
また、構成単位 (al)乃至構成単位 (a4)をバランスよく配合することによって、適度 なコントラストが得られ、解像性が向上する。また、エッチング耐性が向上する。さらに 良好な露光余裕度が得られる。 Also, by blending the structural units (al) to (a4) in a well-balanced manner, an appropriate contrast can be obtained and the resolution can be improved. Further, etching resistance is improved. further Good exposure latitude is obtained.
[0063] なお、レジスト組成物用榭脂は、構成単位 (al)乃至 (a4)から選択される以外の他 の共重合可能な構成単位を有して 、てもよ 、が、構成単位 (al)乃至構成単位 (a4) カゝら選択される構成単位を主成分とする榭脂であることが好ましい。  The resin for a resist composition may have another copolymerizable structural unit other than the structural units selected from the structural units (al) to (a4). al) to structural unit (a4) It is preferable that the resin is a resin having a structural unit selected from the main components as a main component.
ここで主成分とは好ましくはこれら力も選択される構成単位の合計が 70モル%以上 、好ましくは 80モル%以上であり、中でも好ましいのは、 100%である。  Here, the main component is preferably such that the total of the constituent units for which these forces are also selected is 70 mol% or more, preferably 80 mol% or more, and particularly preferably 100%.
本発明のレジスト組成物用榭脂は、構成単位 (al)乃至 (a4)のうち構成単位 (al) と構成単位 (a2)は有することを必須とする。 The resist composition for榭脂of the present invention, the structural units (al) to the structural units of (a4) (al) and the structural unit (a2) is required and that it has.
[0064] なお、レジスト組成物用榭脂にぉ ヽて、特に好ま ヽのは、構成単位 (al)及び構 成単位 (a2)力もなる榭脂、または構成単位 (al)、構成単位 (a2)及び構成単位 (a3 )からなる榭脂、または構成単位 (al)、構成単位 (a2)及び構成単位 (a4)カゝらなる榭 脂、または構成単位 (al)乃至構成単位 (a4)カゝらなる榭脂であり、より好ましくは構成 単位 (al)、構成単位 (a2)及び構成単位 (a3)力もなる榭脂である。  [0064] With respect to the resin for a resist composition, particularly preferred are a resin having a structural unit (al) and a structural unit (a2) or a structural unit (al) and a structural unit (a2 ) And the structural unit (a3), or the structural unit (al), the structural unit (a2) and the structural unit (a4), the resin, or the structural unit (al) to the structural unit (a4) It is a resin having a high strength, more preferably a resin having a structural unit (al), a structural unit (a2) and a structural unit (a3).
[0065] レジスト組成物用榭脂の質量平均分子量(Mw;ゲルパーミエーシヨンクロマトグラフ ィによるポリスチレン換算質量平均分子量)は、好ましくは 2000〜30000、さらに好 ましくは 2000〜10000、最ち好ましくは 3000〜8000とされる。この範囲とすることに より、膨潤の抑制、これによるマイクロブリッジの抑制の点から好ましい。また、高解像 性の点力も好ま 、。分子量は低 、方が良好な特性が得られる傾向がある。  [0065] The weight average molecular weight (Mw; weight average molecular weight in terms of polystyrene by gel permeation chromatography) of the resin for a resist composition is preferably from 2000 to 30,000, more preferably from 2000 to 10,000, and most preferably. Is between 3000 and 8000. This range is preferable from the viewpoint of suppressing swelling and thereby suppressing microbridges. Also, high resolution point power is preferred. The lower the molecular weight, the better the properties tend to be.
[0066] 前記レジスト組成物用榭脂は、例えば各構成単位を誘導するモノマーを常法により ラジカノレ重合すること〖こよって得ることができる。  [0066] The resin for a resist composition can be obtained, for example, by subjecting a monomer for deriving each structural unit to radical polymerization by a conventional method.
[0067] また、本発明のレジスト組成物用榭脂は、ネガ型レジスト組成物に用いると好適で ある。  The resin for a resist composition of the present invention is preferably used for a negative resist composition.
[0068] [ネガ型レジスト糸且成物]  [Negative resist yarn and composition]
本発明のネガ型レジスト組成物は、(A)本発明のレジスト組成物用榭脂、(B)露光 により酸を発生する酸発生剤成分、および (C)架橋剤成分を含有する。  The negative resist composition of the present invention contains (A) the resin for a resist composition of the present invention, (B) an acid generator component that generates an acid upon exposure, and (C) a crosslinking agent component.
[0069] (A)本発明のレジスト組成物用榭脂 (A) Resin for resist composition of the present invention
(A)成分につ!、ては上記の通りである。  The components (A) are as described above.
(A)成分は 1種または 2種以上混合して用いることができる。 (A)成分の含有量は、形成しょうとするレジスト膜厚に応じて調整すればよい。 (B)露光により酸を発生する酸発生剤成分 The component (A) can be used alone or in combination of two or more. The content of the component (A) may be adjusted according to the resist film thickness to be formed. (B) an acid generator component that generates an acid upon exposure
(B)成分は、従来の化学増幅型レジスト組成物にお 、て使用されて 、る公知の酸 発生剤から特に限定せずに用いることができる。  The component (B) can be used without particular limitation from known acid generators used in conventional chemically amplified resist compositions.
このような酸発生剤としては、これまで、ョードニゥム塩やスルホ -ゥム塩などのォ- ゥム塩系酸発生剤、ォキシムスルホネート系酸発生剤、ビスアルキルまたはビスァリ 一ルスルホ -ルジァゾメタン類、ポリ(ビススルホ -ル)ジァゾメタン類、ニトロべンジル スルホネート類などのジァゾメタン系酸発生剤、イミノスルホネート系酸発生剤、ジス ルホン系酸発生剤など多種のものが知られている。  Examples of such acid generators include, for example, rhodium salt-based acid generators such as odonium salts and sulfo-dum salts, oxime sulfonate-based acid generators, bisalkyl or bisarylsulfol-diazomethanes, Various types are known, such as diazomethane acid generators such as poly (bissulfol) diazomethanes and nitrobenzylsulfonates, iminosulfonate acid generators, and disulfone acid generators.
ォ-ゥム塩系酸発生剤の具体例としては、ジフエ-ルョードニゥムのトリフルォロメタ ンスルホネートまたはノナフルォロブタンスルホネート、ビス(4—tert ブチルフエ- ル)ョードニゥムのトリフルォロメタンスルホネートまたはノナフルォロブタンスルホネー ト、トリフエ-ルスルホ-ゥムのトリフルォロメタンスルホネート、そのヘプタフルォロプ 口パンスルホネートまたはそのノナフルォロブタンスルホネート、トリ(4 メチルフエ- ル)スノレホニゥムのトリフノレオロメタンスノレホネート、そのヘプタフノレォロプロパンスノレ ホネートまたはそのノナフルォロブタンスルホネート、ジメチル(4ーヒドロキシナフチ ル)スノレホニゥムのトリフノレオロメタンスノレホネート、そのヘプタフノレォロプロパンスノレ ホネートまたはそのノナフルォロブタンスルホネート、モノフエ-ルジメチルスルホ -ゥ ムのトリフルォロンメタンスルホネート、そのヘプタフルォロプロパンスルホネートまた はそのノナフルォロブタンスルホネート、ジフエ-ルモノメチルスルホ-ゥムのトリフル ォロメタンスルホネート、そのヘプタフルォロプロパンスルホネートまたはそのノナフル ォロブタンスルホネート、(4 メチルフエ-ル)ジフエ-ルスルホ-ゥムのトリフルォロ メタンスルホネート、そのヘプタフルォロプロパンスルホネートまたはそのノナフルォロ ブタンスルホネート、(4—メトキシフエ-ル)ジフエ-ルスルホ-ゥムのトリフルォロメタ ンスルホネート、そのヘプタフルォロプロパンスルホネートまたはそのノナフルォロブ タンスルホネート、トリ(4— tert—ブチル)フエ-ルスルホ-ゥムのトリフルォロメタンス ルホネート、そのヘプタフルォロプロパンスルホネートまたはそのノナフルォロブタン スルホネートなどが挙げられる。 [0071] ォキシムスルホネート系酸発生剤の具体例としては、 a (メチルスルホ -ルォキシ ィミノ)—フエ-ルァセトニトリル、 at - (メチルスルホ -ルォキシィミノ)—p—メトキシフ ェ-ルァセトニトリル、 α - (トリフルォロメチルスルホ -ルォキシィミノ)—フエ-ルァ セト-トリル、 α - (トリフルォロメチルスルホ -ルォキシィミノ)—p—メトキシフエ-ル ァセトニトリル、 at - (ェチルスルホニルォキシィミノ)—p—メトキシフエ二ルァセトニト リル、 α—(プロピルスルホ -ルォキシィミノ) p メチルフエ-ルァセトニトリル、 α (メチルスルホ -ルォキシィミノ) ρ ブロモフエ-ルァセトニトリルなどが挙げられ る。これらの中で、 α (メチルスルホ -ルォキシィミノ) ρ—メトキシフエ-ルァセト 二トリルが好ましい。 Specific examples of the acid salt-based acid generator include trifluoromethanesulfonate or nonafluorobutanesulfonate of di-fluorodominium, trifluoromethanesulfonate or nonafluorobenoble of bis (4-tert-butylphenyl) iodenum. Tansulfonate, trifluoromethanesulfonate of triphenylsulfonium, heptafluorop mouth pansulfonate or nonafluorobutanesulfonate, tri (4-methylphenyl) norehone trifluoromethanesulfonate, heptafluorene Funoleolopropane snorephonate or its nonafluorobutane sulfonate, dimethyl (4-hydroxynaphthyl) snorefonium trifnoroleolomethanesnorephonate, its heptafanololepropane snorephonate or The nonafluorobutanesulfonate, the trifluorone methanesulfonate of monophenyl dimethylsulfonate, the heptafluoropropanesulfonate or the trifluorone of the nonafluorobutanesulfonate, diphenylmonomethylsulfonate Fluoromethanesulfonate, its heptafluoropropanesulfonate or its nonafluorobutanesulfonate, (4 methylphenyl) diphenylsulfo-dimethyl trifluoromethanesulfonate, its heptafluoropropanesulfonate or its nonafluorobutanesulfonate, ( 4-methoxyphenyl) diphenylsulfonium trifluoromethanesulfonate, its heptafluoropropanesulfonate or its nonafluorobutanesulfonate, tri (4-tert-butyl) phenyl Sulfo - © beam of triflate Ruo Lome drawers sulfonates, its like hepta full O b propane sulfonate or a nona Full O Rob Tan sulfonates and the like. [0071] Specific examples of the oxime sulfonate-based acid generator include: a (methylsulfo-roximino) -phenylacetonitrile, at- (methylsulfo- luximino) -p-methoxyphenylacetonitrile, α- (trifluoromethyl) Sulfo-Roxyimino) -Furea-ceto-tolyl, α- (Trifluoromethylsulfo-Roxyimino) -p-Methoxyphenyl-acetonitrile, at- (Ethylsulfonyloxyminino) -p-Methoxyphenylacetonitrile, α- (Propylsulfo-roximinino) p-methylphenyl-acetonitrile, α (methylsulfo-roximinino) ρ-bromo-phenylacetonitrile and the like. Of these, α (methylsulfo-roxyimino) ρ-methoxyphenylacetitol is preferred.
[0072] ジァゾメタン系酸発生剤のうち、ビスアルキルまたはビスァリールスルホ -ルジァゾメ タン類の具体例としては、ビス(イソプロピルスルホ -ル)ジァゾメタン、ビス(ρ トルェ ンスルホ -ル)ジァゾメタン、ビス( 1 , 1—ジメチルェチルスルホ -ル)ジァゾメタン、ビ ス(シクロへキシルスルホ -ル)ジァゾメタン、ビス(2, 4 ジメチルフエ-ルスルホ-ル )ジァゾメタン等が挙げられる。  Among the diazomethane-based acid generators, specific examples of bisalkyl or bisarylsulfol-diazomethanes include bis (isopropylsulfol) diazomethane, bis (ρ toluenesulfol) diazomethane, and bis (1 , 1-dimethylethylsulfol) diazomethane, bis (cyclohexylsulfol) diazomethane, bis (2,4 dimethylphenylsulfol) diazomethane and the like.
また、ポリ(ビススルホニル)ジァゾメタン類としては、例えば、以下に示す構造をもつ 1, 3 ビス(フエ-ルスルホ-ルジァゾメチルスルホ -ル)プロパン(ィ匕合物 Α、分解 点 135°C)、 1 , 4 ビス(フエ-ルスルホ-ルジァゾメチルスルホ -ル)ブタン(化合物 B、分解点 147°C)、 1, 6 ビス(フエ-ルスルホ-ルジァゾメチルスルホ -ル)へキサ ン(化合物 C、融点 132°C、分解点 145°C)、 1, 10 ビス(フエ-ルスルホ-ルジァゾ メチルスルホ -ル)デカン(ィ匕合物 D、分解点 147°C)、 1 , 2 ビス(シクロへキシルス ルホ-ルジァゾメチルスルホ -ル)ェタン(ィ匕合物 E、分解点 149°C)、 1, 3 ビス(シ クロへキシルスルホ-ルジァゾメチルスルホ -ル)プロパン(ィ匕合物 F、分解点 153°C )、 1, 6 ビス(シクロへキシルスルホ-ルジァゾメチルスルホ -ル)へキサン(ィ匕合物 G、融点 109°C、分解点 122°C)、 1, 10 ビス(シクロへキシルスルホ-ルジァゾメチ ルスルホニル)デカン (ィ匕合物 H、分解点 116°C)などを挙げることができる。 [0073] [化 6] Examples of the poly (bissulfonyl) diazomethanes include, for example, 1,3 bis (phenylsulfol-diazomethylsulfol) propane having the following structure (digestion compound Α, decomposition point 135 ° C) ), 1,4-bis (phenylsulfol-diazomethylsulfol) butane (compound B, decomposition point 147 ° C), 1,6-bis (phenylsulfol-l-diazomethylsulfol) hexane (Compound C, melting point 132 ° C, decomposition point 145 ° C), 1,10 bis (phenylsulfol-diazomethylsulfol) decane (disulfide compound D, decomposition point 147 ° C), 1,2 bis (Cyclohexylsulfol-l-diazomethylsulfol) ethane (I-conjugated product E, decomposition point 149 ° C), 1,3-bis (cyclohexylsulfol-l-dazomethylsulfol) propane Dagger F, decomposition point 153 ° C), 1,6 bis (cyclohexylsulfol-diazomethylsulfol) hexane ( Di-conjugated product G, melting point 109 ° C, decomposition point 122 ° C), 1,10 bis (cyclohexylsulfol-l-diazomethylsulfonyl) decane (di-conjugated product H, decomposition point 116 ° C) and the like. it can. [0073]
Figure imgf000021_0001
Figure imgf000021_0001
[0074] 本発明においては、中でも、(A)成分と (C)成分との反応性の点から、(B)成分とし てフッ素化アルキルスルホン酸イオンをァ-オンとするォ-ゥム塩を用いることが好ま しい。 [0074] In the present invention, among others, from the viewpoint of the reactivity between the component (A) and the component (C), an aluminum salt having a fluorinated alkyl sulfonate ion as the component (B) is used as the component (B). It is preferable to use.
[0075] (B)成分としては、 1種の酸発生剤を単独で用いてもよいし、 2種以上を組み合わ せて用いてもよい。 As the component (B), one type of acid generator may be used alone, or two or more types may be used in combination. May be used.
(B)成分の含有量は、(A)成分 100質量部に対し、 0. 5〜30質量部、好ましくは 1 〜 10質量部とされる。上記範囲とすることで、パターン形成が十分に行うことできる。 また、均一なレジスト溶液が得られ、保存安定性が良好となるため好ましい。  The content of the component (B) is 0.5 to 30 parts by mass, preferably 1 to 10 parts by mass, based on 100 parts by mass of the component (A). With the above range, the pattern can be sufficiently formed. In addition, a uniform resist solution is obtained, and storage stability is improved.
[0076] (C)架橋剤成分  (C) Crosslinking agent component
(C)成分は、特に限定されず、これまでに知られている化学増幅型のネガ型レジス ト組成物に用いられて!/、る架橋剤成分の中から任意に選択して用いることができる。  The component (C) is not particularly limited, and may be arbitrarily selected from crosslinker components used in chemically-amplified negative-type resist compositions known so far. it can.
[0077] 具体的には、例えば 2, 3 ジヒドロキシ 5 ヒドロキシメチルノルボルナン、 2 ヒ ドロキシ 5, 6—ビス(ヒドロキシメチル)ノルボルナン、シクロへキサンジメタノール、 3 , 4, 8 (又は 9)—トリヒドロキシトリシクロデカン、 2—メチル 2 ァダマンタノール、 1 , 4 ジォキサン一 2, 3 ジオール、 1, 3, 5 トリヒドロキシシクロへキサンなどのヒド 口キシル基又はヒドロキシアルキル基あるいはその両方を有する脂肪族環状炭化水 素又はその含酸素誘導体が挙げられる。  [0077] Specifically, for example, 2,3 dihydroxy-5 hydroxymethylnorbornane, 2 hydroxy 5,6-bis (hydroxymethyl) norbornane, cyclohexanedimethanol, 3,4,8 (or 9) -trihydroxy Aliphatic ring having a hydroxyl group or hydroxyalkyl group or both such as tricyclodecane, 2-methyl-2-adamantanol, 1,4 dioxane-1,2,3 diol, 1,3,5 trihydroxycyclohexane Examples thereof include hydrocarbons and oxygen-containing derivatives thereof.
また、メラミン、ァセトグアナミン、ベンゾグアナミン、尿素、エチレン尿素、グリコール ゥリルなどのアミノ基含有化合物にホルムアルデヒド又はホルムアルデヒドと低級アル コールを反応させ、該ァミノ基の水素原子をヒドロキシメチル基又は低級アルコキシメ チル基で置換したィ匕合物が挙げられる。  Further, an amino group-containing compound such as melamine, acetoguanamine, benzoguanamine, urea, ethylene urea, or glycol peryl is reacted with formaldehyde or formaldehyde and lower alcohol, and the hydrogen atom of the amino group is replaced with a hydroxymethyl group or a lower alkoxymethyl group. Substituted products are included.
これらのうち、メラミンを用いたものをメラミン系架橋剤、尿素を用いたものを尿素系 架橋剤、エチレン尿素を用いたものをエチレン尿素系架橋剤、グリコールゥリルを用 Vヽたものをグリコールゥリル系架橋剤と!/、う。  Of these, melamine-based products use melamine-based cross-linking agents, urea-based products use urea-based cross-linking agents, ethylene-urea-based products use ethylene-urea-based cross-linking agents, and With peryl crosslinking agents!
具体的にはへキサメトキシメチルメラミン、ビスメトキシメチル尿素、ビスメトキシメチ ルビスメトキシエチレン尿素、テトラメトキシメチルダリコールゥリル、テトラブトキシメチ ルグリコールゥリルなどを挙げることができる。  Specific examples include hexamethoxymethyl melamine, bismethoxymethyl urea, bismethoxymethyl bismethoxyethylene urea, tetramethoxymethyldaricol peril, and tetrabutoxymethyl glycol peril.
[0078] (C)成分として、特に好ましくは、メラミン系架橋剤、尿素系架橋剤、エチレン尿素 系架橋剤、及びグリコールゥリル系架橋剤から選ばれる少なくとも 1種である。特に好 ましくはグリコールゥリル系架橋剤である。  [0078] The component (C) is particularly preferably at least one selected from a melamine-based crosslinking agent, a urea-based crosslinking agent, an ethyleneurea-based crosslinking agent, and a glycolperyl-based crosslinking agent. Particularly preferred are glycol-peryl crosslinking agents.
[0079] グリコールゥリル系架橋剤としては、 N位が、架橋形成基であるヒドロキシアルキル 基または低級アルコキシアルキル基で置換されたグリコールゥリル、あるいは、 N位が 、架橋形成基であるヒドロキシアルキル基及び低級アルコキシアルキル基で置換され たグリコールゥリルが好まし!/、。 [0079] The glycol peryl-based cross-linking agent includes glycol peryl substituted at the N-position with a hydroxyalkyl group or lower alkoxyalkyl group as a cross-linking group, or at the N-position. Glycol peryl substituted with a hydroxyalkyl group and a lower alkoxyalkyl group which are cross-linking groups are preferred!
グリコールゥリル系架橋剤としては、さらに具体的には例えばモノ,ジ,トリ又はテトラ ヒドロキシメチルダリコールゥリル、モノ,ジ,トリ及び/又はテトラメトキシメチルイ匕ダリ コールゥリル、モノ,ジ,トリ及び Z又はテトラエトキシメチルダリコールゥリル、モノ,ジ ,トリ及び Z又はテトラプロポキシメチルイ匕グリコールゥリル、モノ,ジ,トリ及び Z又は テトラブトキシメチルイ匕グリコールゥリルなどがある。なお、「モノ,ジ,トリ及び/又はテ トラ' · ·」とはモノ体、ジ体、トリ体、及びテトラ体の 1種または 2種以上が含まれてれば よいことを示し、特には、トリ体ゃテトラ体が好ましい。  More specifically, examples of the glycoluril-based crosslinking agent include, for example, mono-, di-, tri- or tetrahydroxymethyldaricol-peryl, mono-, di-, tri- and / or tetramethoxymethyl-dalichol-peryl, mono-, di-, tri- And Z or tetraethoxymethyldaricol peril, mono, di, tri and Z or tetrapropoxymethyl iridyl glycol peryl, mono, di, tri and Z or tetrabutoxy methyl iridyl glycol peril and the like. “Mono, di, tri and / or tetra” means that one or more of the mono, di, tri and tetra is required. Is preferably a tri- ゃ tetra-isomer.
また、モノ,ジ,トリ及び/又はテトラメトキシメチルイ匕グリコールゥリル、モノ,ジ,トリ 及び Z又はテトラブトキシメチルイ匕グリコールゥリルも好ましい。  Also preferred are mono, di, tri and / or tetramethoxymethyl iridyl glycol peryl, mono, di, tri and Z or tetrabutoxy methyl iridyl glycol peryl.
そして、コントラスト、解像性の点から、モノ,ジ,トリ及び/又はテトラメトキシメチル 化グリコールゥリルが最も好ましい。この架橋剤は、例えば市販品「Mx270」(製品名 、三和ケミカル社製)として入手することができる。このものはトリ体、テトラ体がほとん どであり、また、単量体、二量体、三量体の混合物である。  From the viewpoints of contrast and resolution, mono, di, tri and / or tetramethoxymethylated glycol peryl is most preferred. This crosslinking agent can be obtained, for example, as a commercial product “Mx270” (product name, manufactured by Sanwa Chemical Co., Ltd.). These are mostly tri- and tetra-forms, and are mixtures of monomers, dimers and trimers.
[0080] (C)成分の配合量は、(A)成分 100質量部に対して 3〜15質量部、好ましくは 5〜 10質量部とされる。 3質量部以上とすることにより、(A)成分をアルカリ不溶性とする ことができる。 15質量部以下とすることにより、解像性の低下を防ぐことができる。架 橋剤の添加量が少な ヽ方が解像性が向上する傾向がある点は、本発明のネガ型レ ジスト組成物にお 、て特徴的であり、経済的にも好適な点である。  [0080] The compounding amount of the component (C) is 3 to 15 parts by mass, preferably 5 to 10 parts by mass, per 100 parts by mass of the component (A). When the amount is 3 parts by mass or more, the component (A) can be made alkali-insoluble. When the amount is 15 parts by mass or less, a decrease in resolution can be prevented. The fact that the smaller the amount of the crosslinking agent added, the higher the resolution tends to be, which is a characteristic of the negative resist composition of the present invention and is economically preferable. .
[0081] (D)含窒素有機化合物  [0081] (D) Nitrogen-containing organic compound
本発明のネガ型レジスト組成物には、レジストパターン形状、引き置き経時安定性 などを向上させるために、さらに任意の成分として、含窒素有機化合物 (D) (以下、 ( D)成分と ヽぅ)を配合させることができる。  The negative resist composition of the present invention further comprises a nitrogen-containing organic compound (D) (hereinafter referred to as component (D)) as an optional component in order to improve the resist pattern shape, the stability with time of storage, and the like. ) Can be blended.
この(D)成分は、既に多種多様なものが提案されているので、公知のものから任意 に用いれば良いが、脂肪族ァミン、特に第 2級脂肪族アミンゃ第 3級脂肪族ァミンが 好ましい。  As the component (D), a wide variety of components have already been proposed, any known one may be used arbitrarily, and aliphatic amines, particularly secondary aliphatic amines ゃ tertiary aliphatic amines, are preferred. .
脂肪族ァミンとしては、アンモニア NHの水素原子の少なくとも 1つを、炭素数 12以 下のアルキル基またはヒドロキシアルキル基で置換したァミン(アルキルアミンまたは アルキルアルコールァミン)が挙げられる。その具体例としては、 n—へキシルァミン、 n プチルァミン、 n—ォクチルァミン、 n—ノ-ルァミン、 n—デシルァミン等のモノ アルキルァミン;ジェチルァミン、ジ—n—プロピルァミン、ジ—n プチルァミン、ジ —n—ォクチルァミン、ジシクロへキシルァミン等のジアルキルァミン;トリメチルァミン 、トリェチルァミン、トリ—n—プロピルァミン、トリー n—ブチルァミン、トリ— n—へキシ ルァミン、トリー n—ペンチルァミン、トリー n プチルァミン、トリー n—ォクチルアミ ン、トリ— n—ノ-ルァミン、トリ— n—デ力-ルァミン、トリ— n—ドデシルァミン等のトリ アルキルァミン;ジエタノールァミン、トリエタノールァミン、ジイソプロパノールァミン、 トリイソプロパノールァミン、ジー n—ォクタノールァミン、トリー n—ォクタノールァミン 等のアルキルアルコールァミン等が挙げられる。 As the aliphatic amine, at least one of the hydrogen atoms of ammonia NH has at least 12 carbon atoms. Amines (alkylamines or alkylalcoholamines) substituted with an alkyl or hydroxyalkyl group below. Specific examples thereof include monoalkylamines such as n-hexylamine, n-butylamine, n-octylamine, n-norylamine, and n-decylamine; getylamine, di-n-propylamine, di-n-butylamine, di-n-octylamine. , Dicyclohexylamine and the like; trimethylamine, triethylamine, tri- n -propylamine, tri-n-butylamine, tri-n-hexylamine, tri-n-pentylamine, tri-n-ptylamine, tri-n-octylamine, Trialkylamines such as tri-n-no-lamine, tri-n-de-lamine and tri-n-dodecylamine; diethanolamine, triethanolamine, diisopropanolamine, triisopropanolamine, di- n -o Kutanolamine, tree n —Alkyl alcoholamines such as octanolamine and the like.
これらは単独で用いてもょ 、し、 2種以上を組み合わせて用いてもょ 、。  These may be used alone or in combination of two or more.
(D)成分は、(A)成分 100質量部に対して、通常 0. 01 5. 0質量部の範囲で用 いられる。これらの中でも、アルキルアルコールァミン及びトリアルキルァミンが好まし く、アルキルアルコールァミンが最も好ましい。アルキルアルコールァミンの中でもトリ エタノールアミンゃトリイソプロパノールァミンのようなアルキルアルコールァミンが最も 好ましい。  Component (D) is generally used in an amount of 0.015.0 parts by mass with respect to 100 parts by mass of component (A). Of these, alkyl alcoholamines and trialkylamines are preferred, and alkyl alcoholamines are most preferred. Among the alkyl alcoholamines, an alkyl alcohol amine such as triethanolamine / triisopropanolamine is most preferable.
(E)成分 (E) component
また、前記 (D)成分との配合による感度劣化を防ぎ、またレジストパターン形状、引 き置き安定性等の向上の目的で、さらに任意の成分として、有機カルボン酸又はリン のォキソ酸若しくはその誘導体 (E) (以下、(E)成分という)を含有させることができる 。なお、(D)成分と (E)成分は併用することもできるし、いずれか 1種を用いることもで きる。  Further, for the purpose of preventing sensitivity deterioration due to blending with the component (D) and improving the resist pattern shape and the stability of the resist pattern, an organic carboxylic acid or an oxo acid of phosphorus or a derivative thereof as an optional component. (E) (hereinafter referred to as component (E)). The component (D) and the component (E) can be used in combination, or one of them can be used.
有機カルボン酸としては、例えば、マロン酸、クェン酸、リンゴ酸、コハク酸、安息香 酸、サリチル酸などが好適である。  As the organic carboxylic acid, for example, malonic acid, citric acid, malic acid, succinic acid, benzoic acid, salicylic acid and the like are suitable.
リンのォキソ酸若しくはその誘導体としては、リン酸、リン酸ジー n—ブチルエステル 、リン酸ジフエ-ルエステルなどのリン酸又はそれらのエステルのような誘導体、ホス ホン酸、ホスホン酸ジメチルエステル、ホスホン酸ージー n—ブチルエステル、フエ- ルホスホン酸、ホスホン酸ジフエ-ルエステル、ホスホン酸ジベンジルエステルなどの ホスホン酸及びそれらのエステルのような誘導体、ホスフィン酸、フエ-ルホスフィン 酸などのホスフィン酸及びそれらのエステルのような誘導体が挙げられ、これらの中 で特にホスホン酸が好まし 、。 Phosphorus oxo acids or derivatives thereof include phosphoric acid, phosphoric acid such as di-n-butyl phosphate and diphenyl phosphate, and derivatives such as esters thereof, phosphonic acid, dimethyl phosphonate, and phosphonic acid. -N-butyl ester, Hue- Derivatives such as phosphonic acids and their esters such as diphosphonic acid, diphenyl phosphonate and dibenzyl phosphonate, and derivatives such as phosphinic acids and esters thereof such as phosphinic acid and phenylphosphinic acid. Of these, phosphonic acid is particularly preferred.
(E)成分は、(A)成分 100質量部当り 0. 01〜5. 0質量部の割合で用いられる。 本発明のネガ型レジスト組成物は、本発明のネガ型レジスト組成物の構成材料を 有機溶剤に溶解させて製造することができる。本発明のネガ型レジスト組成物の構成 材料とは、(A)本発明のレジスト組成物用榭脂、(B)露光により酸を発生する酸発生 剤成分、及び (C)架橋剤成分である。本発明のネガ型レジスト組成物の構成材料は 、上記 (A)乃至 (C)成分に加えて、(D)含窒素有機化合物と (E)成分のうち少なくと も一方を含むものであってよ 、。  The component (E) is used in an amount of 0.01 to 5.0 parts by mass per 100 parts by mass of the component (A). The negative resist composition of the present invention can be produced by dissolving the constituent materials of the negative resist composition of the present invention in an organic solvent. The constituent materials of the negative resist composition of the present invention are (A) the resin for a resist composition of the present invention, (B) an acid generator component that generates an acid upon exposure, and (C) a crosslinking agent component. . The constituent material of the negative resist composition of the present invention contains at least one of the (D) nitrogen-containing organic compound and the (E) component in addition to the components (A) to (C). Yo,
有機溶剤としては、使用する各成分を溶解し、均一な溶液とすることができるもので あればよぐ従来、化学増幅型レジストの溶剤として公知のものの中から任意のものを 1種または 2種以上適宜選択して用いることができる。  As the organic solvent, any one can be used as long as it can dissolve each component to be used and can form a uniform solution. The above can be appropriately selected and used.
例えば、 γ —ブチロラタトン等のラタトン類、アセトン、メチルェチルケトン、シクロへ キサノン、メチルイソアミルケトン、 2—へプタノンなどのケトン類や、エチレングリコー ル、エチレングリコーノレモノアセテート、ジエチレングリコール、ジエチレングリコーノレ モノアセテート、プロピレングリコール、プロピレングリコールモノアセテート、ジプロピ レングリコール、またはジプロピレングリコールモノアセテートのモノメチルエーテル、 モノェチルエーテル、モノプロピルエーテル、モノブチルエーテルまたはモノフエニル エーテルなどの多価アルコール類およびその誘導体や、ジォキサンのような環式ェ 一テル類や、乳酸メチル、乳酸ェチル(EL)、酢酸メチル、酢酸ェチル、酢酸ブチル 、ピルビン酸メチル、ピルビン酸ェチル、メトキシプロピオン酸メチル、エトキシプロピ オン酸ェチルなどのエステル類などを挙げることができる。  For example, ratatones such as γ-butyrolatatone, ketones such as acetone, methyl ethyl ketone, cyclohexanone, methyl isoamyl ketone, and 2-heptanone; ethylene glycol, ethylene glycol monomonoacetate, diethylene glycol, and diethylene glycol Monoacetate, propylene glycol, propylene glycol monoacetate, dipropylene glycol or dipropylene glycol monoacetate, such as monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether or monophenyl ether and polyhydric alcohols and derivatives thereof, Cyclic ethers such as dioxane; methyl lactate, ethyl lactate (EL); methyl acetate; ethyl acetate; butyl acetate; methyl pyruvate; Acid Echiru, methyl methoxypropionate, and the like esters such as ethoxy propyl propionic acid Echiru.
これらの有機溶剤は単独で用いてもよぐ 2種以上の混合溶剤として用いてもょ 、。 また、プロピレングリコールモノメチルエーテルアセテート(PGMEA)と極性溶剤と を混合した混合溶媒は好ましい。その配合比(質量比)は、 PGMEAと極性溶剤との 相溶性等を考慮して適宜決定すればよいが、好ましくは 1 : 9〜9 : 1、より好ましくは 2 : 8〜8: 2の範囲内とすることが好まし!/、。 These organic solvents may be used alone or as a mixed solvent of two or more. Further, a mixed solvent obtained by mixing propylene glycol monomethyl ether acetate (PGMEA) and a polar solvent is preferable. The mixing ratio (mass ratio) may be appropriately determined in consideration of the compatibility between PGMEA and the polar solvent, but is preferably 1: 9 to 9: 1, more preferably 2: 1 to 9: 1. : 8 to 8: preferably in the range of 2! / ,.
より具体的には、極性溶剤として ELを配合する場合は、 PGMEA:ELの質量比が 好ましくは 2: 8〜8: 2、より好ましくは 3: 7〜7: 3であると好まし!/、。  More specifically, when EL is blended as a polar solvent, the mass ratio of PGMEA: EL is preferably 2: 8 to 8: 2, more preferably 3: 7 to 7: 3! / ,.
また、有機溶剤として、その他には、 PGMEA及び ELの中カゝら選ばれる少なくとも 1種と γ—プチ口ラタトンとの混合溶剤も好ましい。この場合、混合割合としては、前 者と後者の質量比が好ましくは 70: 30-95 : 5とされる。  Further, as the organic solvent, a mixed solvent of at least one selected from PGMEA and EL and γ-petit mouth rataton is also preferable. In this case, the mixing ratio of the former and the latter is preferably 70: 30-95: 5.
また、有機溶剤としては、プロピレングリコールモノメチルエーテル(PGME)も好ま しい。  As the organic solvent, propylene glycol monomethyl ether (PGME) is also preferable.
有機溶剤の使用量は特に限定しないが、基板等に塗布可能な濃度で、塗布膜厚 に応じて適宜設定されるものであるが、一般的にはレジスト組成物の固形分濃度 2〜 20質量%、好ましくは 5〜15質量%の範囲内となる様に用いられる。  Although the amount of the organic solvent used is not particularly limited, it is a concentration that can be applied to a substrate or the like and is appropriately set according to a coating film thickness. Generally, the solid content concentration of the resist composition is 2 to 20 mass %, Preferably in the range of 5 to 15% by mass.
[0084] 本発明のネガ型レジスト組成物には、上述した成分以外にその他の任意成分が含 まれていてもよぐ所望により混和性のある添加剤、例えばレジスト膜の性能を改良す るための付加的榭脂、塗布性を向上させるための界面活性剤、溶解抑制剤、可塑剤 、安定剤、着色剤、ハレーション防止剤、染料などを適宜、添加含有させることができ る。 [0084] The negative resist composition of the present invention may contain other optional components in addition to the above-mentioned components, and if necessary, improve the performance of a miscible additive such as a resist film. A surfactant, a dissolution inhibitor, a plasticizer, a stabilizer, a colorant, an antihalation agent, a dye, and the like for improving the application of the resin and the coatability can be appropriately added and contained.
[0085] 本発明のネガ型レジスト組成物は、特に限定するものではな ヽが、露光光源として ArFエキシマレーザーを用いるプロセス用として好適である。  [0085] The negative resist composition of the present invention is not particularly limited, but is suitable for processes using an ArF excimer laser as an exposure light source.
当該プロセスには高!ヽ解像性が求められ、本発明のネガ型レジスト組成物にお!ヽ ては、膨潤が抑制されることにより、解像性等の諸特性が向上しているため、この様な 厳 、要求に対応することができるからである。  The process requires high resolution, and in the negative resist composition of the present invention, various properties such as resolution are improved by suppressing swelling. This is because such strict requirements can be met.
また、 ArFエキシマレーザーに対して透明性の高い構造とすることができるためで ある。  Another reason is that a structure having high transparency to an ArF excimer laser can be obtained.
[0086] [レジストパターン形成方法]  [0086] [Method of forming resist pattern]
レジストパターン形成方法は、本発明のネガ型レジスト組成物を基板上に塗布し、 プリベータ (PAB)し、選択的に露光した後、 PEB (露光後加熱)を施し、アルカリ現 像してレジストパターンを形成する。  The method of forming a resist pattern comprises applying the negative resist composition of the present invention onto a substrate, pre-betaing (PAB), selectively exposing, subjecting to PEB (heating after exposure), and developing an alkaline image to form a resist pattern. To form
本発明のレジストパターン形成方法は、例えば以下の様にして行うことができる。 すなわち、まずシリコンゥエーハのような基板上に、上記ネガ型レジスト組成物をス ピンナーなどで塗布する。ついで、ネガ型レジスト組成物を、 80〜150°Cの温度条件 下で、プレベータを 40〜 120禾少間、好ましくは 60〜90禾少間施す。ついで、このプレ ベータしたレジスト膜に、例えば ArF露光装置などにより、 ArFエキシマレーザー光 を所望のマスクパターンを介して選択的に露光する。ついで、この選択的に露光した レジスト膜に、 80〜150°Cの温度条件下で、 PEB (露光後加熱)を 40〜120秒間、 好ましくは 60〜90秒間施す。次 、でこの PEBを施したレジスト膜をアルカリ現像液、 例えば 0. 1〜10質量0 /0テトラメチルアンモ-ゥムヒドロキシド水溶液を用いて現像処 理する。このようにして、マスクパターンに忠実なレジストパターンを得ることができる。 なお、基板とレジスト組成物の塗布層との間には、有機系または無機系の反射防止 膜を設けることちできる。 The method of forming a resist pattern according to the present invention can be performed, for example, as follows. That is, first, the negative resist composition is applied on a substrate such as silicon wafer with a spinner or the like. Next, the negative resist composition is applied with a prebeta at a temperature of 80 to 150 ° C. for 40 to 120 hectares, preferably 60 to 90 hectares. Next, the pre-stressed resist film is selectively exposed to ArF excimer laser light through a desired mask pattern using, for example, an ArF exposure device. Then, PEB (post-exposure bake) is applied to the selectively exposed resist film at a temperature of 80 to 150 ° C. for 40 to 120 seconds, preferably 60 to 90 seconds. Next, in an alkali developer of the resist film subjected to the PEB, e.g. 0.1 to 10 weight 0/0 tetramethylammonium - development processing using Umuhidorokishido solution. In this way, a resist pattern faithful to the mask pattern can be obtained. Note that an organic or inorganic antireflection film can be provided between the substrate and the coating layer of the resist composition.
[0087] 露光に用いる波長は、特に限定されず、 ArFエキシマレーザー、 KrFエキシマレー ザ一、 Fエキシマレーザー、 EUV (極紫外線)、 VUV (真空紫外線)、 EB (電子線)、[0087] The wavelength used for the exposure is not particularly limited. ArF excimer laser, KrF excimer laser, F excimer laser, EUV (extreme ultraviolet), VUV (vacuum ultraviolet), EB (electron beam),
2 2
X線、軟 X線などの放射線を用いて行うことができる。特に、本発明にカゝかるレジスト 組成物は、上述の様に ArFエキシマレーザーに対して有効である。  It can be performed using radiation such as X-rays and soft X-rays. In particular, the resist composition according to the present invention is effective for ArF excimer laser as described above.
[0088] 本発明においてはレジストパターンの膨潤を防ぐことができる。これにより、マイクロ ブリッジを抑制できる。また、解像性が良好となる。また、焦点深度幅特性が向上する 。また、 LER (ライエッジラフネス)を抑制できる。なお、 LERとは、ライン側壁の不均 一な凹凸のことである。 In the present invention, swelling of the resist pattern can be prevented. Thereby, the micro bridge can be suppressed. Further, the resolution is improved. In addition, the depth of focus characteristic is improved. Also, LER (Lie Edge Roughness) can be suppressed. Note that LER is uneven unevenness on the line side wall.
また、経時安定性が向上するという効果も得られる。  In addition, the effect of improving the stability over time can be obtained.
実施例  Example
[0089] [合成例で使用したモノマー]  [Monomer used in Synthesis Example]
合成例においては、以下のモノマーを用いた。  In the synthesis examples, the following monomers were used.
(i)下記化学式で表される NBHFAA (ノルボルネンへキサフルォロアルコールアタリ レート)、分子量 340 [0090] [化 7] (i) NBHFAA (norbornene hexafluoro alcohol acrylate) represented by the following chemical formula, molecular weight 340 [0090] [Formula 7]
Figure imgf000028_0001
Figure imgf000028_0001
[0091] (ii)下記化学式で表される HEMA (ヒドロキシェチルメタタリレート)、分子量 130 [0092] [化 8] [0091] (ii) HEMA (hydroxyethyl methacrylate) represented by the following chemical formula, molecular weight 130
Figure imgf000028_0002
Figure imgf000028_0002
[0093] (iii)下記化学式で表される AdOHA (ァダマンタノールアタリレート)、分子量 222 (Iii) AdOHA (adamantanol acrylate) represented by the following chemical formula, molecular weight 222
[0094] [化 9] [0094] [Formula 9]
Figure imgf000029_0001
Figure imgf000029_0001
[0095] (iv)下記化学式で表される RHMA— E[ ( aーヒドロキシメチル)ェチルアタリレート][0095] (iv) RHMA—E [(a-hydroxymethyl) ethytaltalate] represented by the following chemical formula:
、分子量 130 , Molecular weight 130
[0096] [化 10] [0096] [Formula 10]
Figure imgf000029_0002
Figure imgf000029_0002
[0097] (V)下記化学式で表される RHMA— M [ ( aーヒドロキシメチル)メチルアタリレート]、 分子量 116 (V) RHMA—M [(a-hydroxymethyl) methyl atalylate] represented by the following chemical formula, molecular weight 116
[0098] [化 11] [0098] [Formula 11]
Figure imgf000030_0001
Figure imgf000030_0001
(vi)下記化学式で表される GBLA( γ—プチ口ラタトンアタリレート) 分子量 116 (vi) GBLA (γ-petit mouth ratatone acrylate) represented by the following chemical formula: molecular weight 116
[0099] [化 12] [0099] [Formula 12]
Figure imgf000030_0002
Figure imgf000030_0002
(vii)下記化学式で表される NBLA (ノルボルナンラタトンアタリレート) 分子量 222 (vii) NBLA (norbornane ratatone acrylate) represented by the following chemical formula: molecular weight 222
[0100] [化 13] [0100] [Formula 13]
H?C H ? C
Figure imgf000031_0001
Figure imgf000031_0001
[0101] [合成例] [0101] [Synthesis example]
本合成例において、 NMR (Nuclear Magnetic Resonance)は日本電子株式会社製 の JNM— AL400 (製品名、分解能 400MHz)を用いて測定した。  In this synthesis example, NMR (Nuclear Magnetic Resonance) was measured using JNM-AL400 (product name, resolution 400 MHz) manufactured by JEOL Ltd.
•合成例 1  • Synthesis example 1
NBHFAA9. 19g、 HEMA3. 51g、及び AdOHA6. Ogと、重合開始剤であるァ ゾビスイソ酢酸ジメチル 0. 6gとを THF (テトラヒドロフラン) 200mlに溶解した。次に、 この溶液に窒素パブリングを約 10分間施し、 70°Cのオイルバスを用いて加温しなが ら 4時間攪拌し、その後室温まで冷却した。次に、反応液をエバポレーターで濃縮し た後、濃縮液を THF 120mlに溶解し、ヘプタン 1000mlに注ぎ込むことで榭脂を析 出させ、濾過した。得られた榭脂を乾燥機中 40°C、 24時間乾燥させて、白色固体 1 5. 6gを得た(収率 83. 4%)。  9.19 g of NBHFAA, 3.51 g of HEMA, 6.0 g of AdOHA, and 0.6 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). Next, the solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C., and then cooled to room temperature. Next, after the reaction solution was concentrated by an evaporator, the concentrate was dissolved in 120 ml of THF, and poured into 1000 ml of heptane to precipitate a resin, followed by filtration. The obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 15.6 g of a white solid (yield: 83.4%).
得られた榭脂は下記化学式 (4)で示す。その質量平均分子量 (Mw)は 14400、分 散度(MwZMn;Mwは質量平均分子量、 Mnは数平均分子量)は 1. 86であった。 カーボン NMRにより確認したところ、組成比(モル0 /0)は lZmZn=33Z33Z33 であった。これを榭脂 1とする。 [0102] [化 14] The obtained resin is represented by the following chemical formula (4). Its mass average molecular weight (Mw) was 14,400, and the dispersion (MwZMn; Mw was the mass average molecular weight, Mn was the number average molecular weight) was 1.86. Was confirmed by carbon NMR, the composition ratio (mol 0/0) was lZmZn = 33Z33Z33. This is referred to as resin 1. [0102] [Formula 14]
Figure imgf000032_0001
Figure imgf000032_0001
[0103] ·合成例 2 [0103] Synthesis example 2
NBHFAA13. 58g、 HEMA3. 51g、及び AdOHA6. Ogと、重合開始剤である ァゾビスイソ酢酸ジメチル 0. 7gとを THF (テトラヒドロフラン) 200mlに溶解した。この 溶液に窒素パブリングを約 10分間施し、 70°Cのオイルバスを用いて加温しながら 4 時間攪拌し、その後室温まで冷却した。次に、反応液をエバポレーターで濃縮した 後、濃縮液を THF 120mlに溶解し、ヘプタン 1000mlに注ぎ込むことで榭脂を析出 させ、濾過した。得られた榭脂を乾燥機中 40°C、 24時間乾燥させて白色固体 21. 1 gを得た (収率 91. 4%)。  13.58 g of NBHFAA, 3.51 g of HEMA, 6.0 g of AdOHA, and 0.7 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). This solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C, and then cooled to room temperature. Next, after the reaction solution was concentrated by an evaporator, the concentrated solution was dissolved in 120 ml of THF, and poured into 1000 ml of heptane to precipitate a resin, followed by filtration. The obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 21.1 g of a white solid (yield: 91.4%).
得られた榭脂の化学式は上記化学式 (4)と同様である。その質量平均分子量 (M w)は 18200、分散度(MwZMn)は 2. 20であった。カーボン NMRにより確認した ところ、組成比(モル0 /0)は lZmZn=42. 5/28. 75/28. 75であった。これを榭 脂 2とする。 The chemical formula of the obtained resin is the same as the above chemical formula (4). Its mass average molecular weight (M w) was 18,200 and the degree of dispersion (MwZMn) was 2.20. Was confirmed by carbon NMR, the composition ratio (mol 0/0) was lZmZn = 42. 5/28. 75/28. 75. This is referred to as resin 2.
[0104] ·合成例 3 [0104] Synthesis example 3
NBHFAA17. 58g、 HEMA3. 51g、及び AdOHA6. Ogと、重合開始剤である ァゾビスイソ酢酸ジメチル 0. 87gとを THF (テトラヒドロフラン) 200mlに溶解した。次 に、この溶液に窒素パブリングを約 10分間施し、 70°Cのオイルバスを用いて加温し ながら 4時間攪拌し、その後室温まで冷却した。次に、反応液をエバポレーターで濃 縮した後、濃縮液を THF120mlに溶解し、ヘプタン 1000mlに注ぎ込むことで榭脂 を析出させ、濾過した。得られた榭脂を乾燥機中 40°C、 24時間乾燥させて白色固体 23. 9gを得た(収率 88. 2%) o 17.58 g of NBHFAA, 3.51 g of HEMA, 6.50 g of AdOHA, and 0.87 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). Next, this solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C, and then cooled to room temperature. Next, after concentrating the reaction solution with an evaporator, the concentrated solution was dissolved in 120 ml of THF, and poured into 1000 ml of heptane to precipitate a resin, followed by filtration. The obtained resin is dried in a dryer at 40 ° C for 24 hours to obtain a white solid. 23.9 g obtained (yield 88.2%) o
得られた榭脂の化学式は上記化学式 (4)と同様である。その質量平均分子量 (M w)は 17400、分散度(MwZMn)は 2. 40であった。カーボン NMRにより確認した ところ、組成比(モル0 /0)は lZmZn=49Z25. 5/25. 5であった。これを榭脂 3と する。 The chemical formula of the obtained resin is the same as the above chemical formula (4). Its mass average molecular weight (M w) was 17,400 and the degree of dispersion (MwZMn) was 2.40. Was confirmed by carbon NMR, the composition ratio (mol 0/0) was lZmZn = 49Z25. 5/25. 5. This is referred to as resin 3.
[0105] ·合成例 4 [0105] Synthesis example 4
NBHFAA13. 58g、 HEMA1. 76g、及び AdOHA6. Ogと、重合開始剤である ァゾビスイソ酢酸ジメチル 0. 6gとを THF (テトラヒドロフラン) 200mlに溶解した。次に 、この溶液に窒素パブリングを約 10分間施し、 70°Cのオイルバスを用いて加温しな 力 4時間攪拌し、その後室温まで冷却した。次に、反応液をエバポレーターで濃縮 した後、濃縮液を THF120mlに溶解し、ヘプタン 1000mlに注ぎ込むことで榭脂を 析出させ、濾過した。得られた榭脂を乾燥機中 40°C、 24時間乾燥させて白色固体 1 8. 8gを得た(収率 88. 0%)。  13.58 g of NBHFAA, 1.76 g of HEMA, 6.0 g of AdOHA, and 0.6 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). Next, the solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C., and then cooled to room temperature. Next, the reaction solution was concentrated by an evaporator, and then the concentrated solution was dissolved in THF (120 ml) and poured into heptane (1000 ml) to precipitate a resin, followed by filtration. The obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 18.8 g of a white solid (yield: 88.0%).
得られた榭脂の化学式は上記化学式 (4)と同様である。その質量平均分子量 (M w)は 5900、分散度(MwZMn)は 1. 98であった。カーボン NMRにより確認したと ころ、組成比(モル0 /0)は lZmZn=50Zl7Z33であった。これを榭脂 4とする。 The chemical formula of the obtained resin is the same as the above chemical formula (4). Its mass average molecular weight (M w) was 5,900 and dispersity (MwZMn) was 1.98. Rollers and was confirmed by carbon NMR, the composition ratio (mol 0/0) was lZmZn = 50Zl7Z33. This is referred to as resin 4.
[0106] ·合成例 5 [0106] Synthesis example 5
NBHFAA13. 58g、及び AdOHA6. Ogと、重合開始剤であるァゾビスイソ酢酸ジ メチル 0. 5gとを THF (テトラヒドロフラン) 200mlに溶解した。ついで、この溶液に窒 素パブリングを約 10分間施し、 70°Cのオイルバスを用いて加温しながら 4時間攪拌 し、その後室温まで冷却した。次に、反応液をエバポレーターで濃縮した後、濃縮液 を THF 120mlに溶解し、ヘプタン 1000mlに注ぎ込むことで榭脂を析出させ、濾過 した。得られた榭脂を乾燥機中 40°C、 24時間乾燥させて白色固体 14. lgを得た( 収率 72. 0%)。  13.58 g of NBHFAA, 6.0 g of AdOHA, and 0.5 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). Then, the solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C, and then cooled to room temperature. Next, after the reaction solution was concentrated by an evaporator, the concentrated solution was dissolved in 120 ml of THF, and poured into 1000 ml of heptane to precipitate a resin, followed by filtration. The obtained resin was dried in a dryer at 40 ° C. for 24 hours to obtain 14.lg of a white solid (yield: 72.0%).
得られた榭脂の化学式は化学式(5)である。その質量平均分子量 (Mw)は 4000、 分散度(MwZMn)は 1. 59であった。カーボン NMRにより確認したところ、組成比( モル0 /0)は lZn=60Z40であった。これを榭脂 5とする(分解点: 293°C、 Tg : 105°CThe chemical formula of the obtained resin is chemical formula (5). Its mass average molecular weight (Mw) was 4000 and the degree of dispersion (MwZMn) was 1.59. Was confirmed by carbon NMR, the composition ratio (mol 0/0) was lZn = 60Z40. This is referred to as resin 5 (decomposition point: 293 ° C, Tg: 105 ° C
) o [0107] [化 15] ) o [0107] [Formula 15]
Figure imgf000034_0001
Figure imgf000034_0001
[0108] ·合成例 6 [0108] Synthesis example 6
NBHFAA13. 3g、 HEMA3. 51g、及び AdOHA6. Ogと、重合開始剤であるァ ゾビスイソ酢酸ジメチル 0. 7gとを THF (テトラヒドロフラン) 200mlに溶解した。ついで 、この溶液に窒素パブリングを約 10分間施し、 70°Cのオイルバスを用いて加温しな 力 4時間攪拌し、その後室温まで冷却した。次に、反応液をエバポレーターで濃縮 した後、濃縮液を THF120mlに溶解し、ヘプタン 1000mlに注ぎ込むことで榭脂を 析出させ、濾過した。  13.3 g of NBHFAA, 3.51 g of HEMA, 6.0 g of AdOHA, and 0.7 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). Then, the solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using a 70 ° C. oil bath, and then cooled to room temperature. Next, the reaction solution was concentrated by an evaporator, and then the concentrated solution was dissolved in THF (120 ml) and poured into heptane (1000 ml) to precipitate a resin, followed by filtration.
得られた榭脂を乾燥機中 40°C、 24時間乾燥させて白色固体 19. 8gを得た (収率 8 6. 8%)。  The obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 19.8 g of a white solid (yield 86.8%).
得られた榭脂の化学式は上記化学式 (4)と同様である。その質量平均分子量 (M w)は 5500、分散度(MwZMn)は 1. 90であった。カーボン NMRにより確認したと ころ、組成比(モル0 /0)は lZmZn= 39. 9/29. 4/30. 7であった。これを榭脂 6と する。また、プロトン核磁気共鳴スペクトル ^H—NMR)及び赤外吸収スペクトル (IR )の結果は以下の通りであった。 The chemical formula of the obtained resin is the same as the above chemical formula (4). Its mass average molecular weight (M w) was 5,500 and the degree of dispersion (MwZMn) was 1.90. Rollers and was confirmed by carbon NMR, the composition ratio (mol 0/0) was lZmZn = 39. 9/29. 4/30. 7 . This is called resin 6. The results of proton nuclear magnetic resonance spectrum ^ H-NMR) and infrared absorption spectrum (IR) were as follows.
IR (cm_1) : 3350 (-OH) , 295K-CH CH -)、 1730(C=O)、 1456(- CH -)、 1072 ( IR (cm _1 ): 3350 (-OH), 295K-CH CH-), 1730 (C = O), 1456 (-CH-), 1072 (
2 3 2  2 3 2
C-OH) JH - NMR (DMSO - d、内部標準:テトラメチルシラン) ppm: 1〜2. 3 (m、 C-OH) J H - NMR (DMSO - d, internal standard:. Tetramethylsilane) ppm: 1~2 3 (m,
6  6
36H)、 3. 5 (s、 2H)、 3. 9 (s、 2H)、 4. 4〜4. 8 (m、 3H)、 7. 7 (d、 1H)分解点: 2 25°CTg : 102°C  36H), 3.5 (s, 2H), 3.9 (s, 2H), 4.4-4.8 (m, 3H), 7.7 (d, 1H) Decomposition point: 225 ° CTg: 102 ° C
[0109] ·合成例 7 NBHFAA7. 87g、 HEMA3. 51g、及び AdOHA6. Ogと、重合開始剤であるァ ゾビスイソ酢酸ジメチル 0. 58gとを THF (テトラヒドロフラン) 200mlに溶解した。次に 、この溶液に窒素パブリングを約 10分間施し、 70°Cのオイルバスを用いて加温しな 力 4時間攪拌し、その後室温まで冷却した。次に、反応液をエバポレーターで濃縮 した後、濃縮液を THF120mlに溶解し、ヘプタン 1000mlに注ぎ込むことで榭脂を 析出させ、濾過した。得られた榭脂を乾燥機中 40°C、 24時間乾燥させて白色固体 1 4. 9gを得た(収率 85. 7%) o [0109] Synthesis example 7 7.87 g of NBHFAA, 3.51 g of HEMA, 6.60 g of AdOHA, and 0.58 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). Next, the solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C., and then cooled to room temperature. Next, the reaction solution was concentrated by an evaporator, and then the concentrated solution was dissolved in THF (120 ml) and poured into heptane (1000 ml) to precipitate a resin, followed by filtration. The obtained resin was dried in a dryer at 40 ° C. for 24 hours to obtain 14.9 g of a white solid (yield: 85.7%).
得られた榭脂の化学式は上記化学式 (4)と同様である。その質量平均分子量 (M w)は 6500、分散度(MwZMn)は 2. 23であった。カーボン NMRにより確認したと ころ、組成比(モル0 /0)は lZmZn=30Z35Z35であった。これを榭脂 7とする。 '合成例 8 The chemical formula of the obtained resin is the same as the above chemical formula (4). Its mass average molecular weight (M w) was 6,500, and its dispersity (MwZMn) was 2.23. Rollers and was confirmed by carbon NMR, the composition ratio (mol 0/0) was lZmZn = 30Z35Z35. This is referred to as resin 7. 'Synthesis example 8
NBHFAA13. 3g、 RHMA— E3. 51g、及び AdOHA6. Ogと、重合開始剤であ るァゾビスイソ酢酸ジメチル 0. 7gとを THF (テトラヒドロフラン) 200mlに溶解した。次 に、この溶液に窒素パブリングを約 10分間施し、 70°Cのオイルバスを用いて加温し ながら 4時間攪拌し、その後室温まで冷却した。次に、反応液をエバポレーターで濃 縮した後、濃縮液を THF120mlに溶解し、ヘプタン 1000mlに注ぎ込むことで榭脂 を析出させ、濾過した。得られた榭脂を乾燥機中 40°C、 24時間乾燥させて白色固体 21. Ogを得た(収率 92. 0%)。  13.3 g of NBHFAA, 3.51 g of RHMA-E, 6.0 g of AdOHA, and 0.7 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). Next, this solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C, and then cooled to room temperature. Next, after concentrating the reaction solution with an evaporator, the concentrated solution was dissolved in 120 ml of THF, and poured into 1000 ml of heptane to precipitate a resin, followed by filtration. The obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 21.Og of a white solid (yield 92.0%).
得られた榭脂の化学式は下記化学式 (6)である。その質量平均分子量 (Mw)は 5 570、分散度(MwZMn)は 2. 02であった。カーボン NMRにより確認したところ、組 成比(モル0 /0)は lZmZn= 35. 8/26. 3/37. 9であった。これを榭脂 8とする。 また、プロトン核磁気共鳴スペクトル ^H—NMR)及び赤外吸収スペクトル (IR)の 結果は以下の通りであった。 The chemical formula of the obtained resin is the following chemical formula (6). Its mass average molecular weight (Mw) was 5570 and the degree of dispersion (MwZMn) was 2.02. Was confirmed by carbon NMR, set composition ratio (mol 0/0) was lZmZn = 35. 8/26. 3/37. 9 . This is referred to as resin 8. The results of proton nuclear magnetic resonance spectrum ^ H-NMR) and infrared absorption spectrum (IR) were as follows.
IR (cm— :3388 (— OH)、 2948(- CH CH -)、 1730(C=O)、 1452(- CH -)、 1052 (  IR (cm—: 3388 (—OH), 2948 (-CH CH-), 1730 (C = O), 1452 (-CH-), 1052 (
2 3 2  2 3 2
C-OH) 'H-NMRCDMSO,内部標準:テトラメチルシラン) ppm: l〜2. 3 (m、 36 H)、 3. 5 (Broad, 2H)、4. 0 (s、 2H)、4. 4〜4. 8 (d、 3H)、 7. 7 (d、 1H)分解点: 238°CTg: 94°C (C-OH) 'H-NMRCDMSO, internal standard: tetramethylsilane) ppm: l ~ 2.3 (m, 36H), 3.5 (Broad, 2H), 4.0 (s, 2H), 4. 4-4.8 (d, 3H), 7.7 (d, 1H) Decomposition point: 238 ° CTg: 94 ° C
[0111] [化 16] [0111] [Formula 16]
Figure imgf000036_0001
Figure imgf000036_0001
[0112] '合成例 9 [0112] 'Synthesis example 9
NBHFAA9. 50g、 HEMA1. 21g、及び AdOHA2. 07gと、重合開始剤である ァゾビスイソ酢酸ジメチル 0. 35gとを THF (テトラヒドロフラン) 100mlに溶解した。次 に、この溶液に窒素パブリングを約 10分間施し、 70°Cのオイルバスを用いて加温し ながら 4時間攪拌し、その後室温まで冷却した。次に、反応液をエバポレーターで濃 縮した後、濃縮液を THF60mlに溶解し、ヘプタン 1000mlに注ぎ込むことで榭脂を 析出させ、濾過した。得られた榭脂を乾燥機中 40°C、 24時間乾燥させて白色固体 1 1. 5gを得た(収率 90. 0%)。  9.50 g of NBHFAA, 21 g of HEMA, and 2.07 g of AdOHA, and 0.35 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 100 ml of THF (tetrahydrofuran). Next, this solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C, and then cooled to room temperature. Next, after concentrating the reaction solution with an evaporator, the concentrate was dissolved in 60 ml of THF, and poured into 1000 ml of heptane to precipitate a resin, followed by filtration. The obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 11.5 g of a white solid (yield: 90.0%).
得られた榭脂の化学式は上記化学式 (4)と同様である。その質量平均分子量 (M w)は 6600、分散度(MwZMn)は 2. 15であった。カーボン NMRにより確認したと ころ、組成比(モル0 /0)は lZmZn=60Z20Z20であった。これを榭脂 9とする。 The chemical formula of the obtained resin is the same as the above chemical formula (4). Its mass average molecular weight (M w) was 6,600, and dispersity (MwZMn) was 2.15. Rollers and was confirmed by carbon NMR, the composition ratio (mol 0/0) was lZmZn = 60Z20Z20. This is referred to as resin 9.
[0113] '合成例 10 [0113] 'Synthesis example 10
NBHFAA12. 66g、 HEM AO. 6g、及び AdOHAl. 03gと、重合開始剤である ァゾビスイソ酢酸ジメチル 0. 35gとを THF (テトラヒドロフラン) 100mlに溶解した。次 に、この溶液に窒素パブリングを約 10分間施し、 70°Cのオイルバスを用いて加温し ながら 4時間攪拌し、その後室温まで冷却した。次に、反応液をエバポレーターで濃 縮した後、濃縮液を THF60mlに溶解し、ヘプタン 2000mlに注ぎ込むことで榭脂を 析出させ、濾過した。得られた榭脂を乾燥機中 40°C、 24時間乾燥させて白色固体 1 0. 63gを得た(収率 74. 3%)。 NBHFAA 12.66 g, HEM AO. 6 g, and AdOHAl. 03 g, and a polymerization initiator 0.35 g of dimethyl azobisisoacetate was dissolved in 100 ml of THF (tetrahydrofuran). Next, this solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C, and then cooled to room temperature. Next, after concentrating the reaction solution with an evaporator, the concentrated solution was dissolved in 60 ml of THF, and poured into 2000 ml of heptane to precipitate a resin, which was filtered. The obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 10.63 g of a white solid (yield: 74.3%).
得られた榭脂の化学式は上記化学式 (4)と同様である。その質量平均分子量 (M w)は 6100、分散度(MwZMn)は 1. 52であった。カーボン NMRにより確認したと ころ、組成比(モル0 /0)は lZmZn=80ZlOZlOであった。これを榭脂 10とする。 '合成例 11 The chemical formula of the obtained resin is the same as the above chemical formula (4). Its mass average molecular weight (M w) was 6,100 and the degree of dispersion (MwZMn) was 1.52. Rollers and was confirmed by carbon NMR, the composition ratio (mol 0/0) was lZmZn = 80ZlOZlO. This is referred to as resin 10. '' Synthesis example 11
NBHFAA30. Ogと、重合開始剤であるァゾビスイソ酢酸ジメチル 0. 70gとを THF (テトラヒドロフラン) 200mlに溶解した。次に、この溶液に窒素パブリングを約 10分間 施し、 70°Cのオイルバスを用いて加温しながら 4時間攪拌し、その後室温まで冷却し た。次に、反応液をエバポレーターで濃縮した後、濃縮液をジォキサン 120mlに溶 解し、純水 4800mlに注ぎ込むことで榭脂を析出させ、濾過した。得られた榭脂を乾 燥機中 40°C、 24時間乾燥させて白色固体 10. 64gを得た (収率 53. 2%)。  30 g of NBHFAA and 0.70 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). Next, the solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C, and then cooled to room temperature. Next, after concentrating the reaction solution with an evaporator, the concentrated solution was dissolved in 120 ml of dioxane, and poured into 4800 ml of pure water to precipitate a resin, which was filtered. The obtained resin was dried in a dryer at 40 ° C. for 24 hours to obtain 10.64 g of a white solid (yield 53.2%).
得られた榭脂の化学式は下記化学式 (7)の通りである。その質量平均分子量 (Mw )は 3800、分散度(MwZMn)は 1. 37であった。これを榭脂 11とする。 The chemical formula of the obtained resin is as shown in the following chemical formula (7). Its mass average molecular weight (Mw) was 3,800, and dispersity (MwZMn) was 1.37. This is referred to as resin 11.
[0115] [化 17] [0115] [Formula 17]
Figure imgf000038_0001
Figure imgf000038_0001
[0116] '合成例 12 [0116] 'Synthesis example 12
メタクリル酸 2. 73gと RHMA— E16. 5gと重合開始剤であるァゾビスイソブチ口-ト リル 1. Ogとを THF (テトラヒドロフラン) 300mlに溶解した。次に、この溶液に窒素バ ブリングを約 10分間施し、 70°Cのオイルバスを用いて加温しながら 4時間攪拌し、そ の後室温まで冷却した。次に、反応液をエバポレーターで濃縮した後、濃縮液を TH F150mlに溶解し、ヘプタン 850mlとイソプロピルアルコール 150mlとの混合溶剤に 注ぎ込むことで榭脂を析出させ、濾過した。得られた榭脂を乾燥機中 40°C、 24時間 乾燥させて白色固体 11. 75gを得た (収率 63. 2%)。  2.73 g of methacrylic acid, 16.5 g of RHMA-E1 and azobisisobutymouth-triol 1.Og as a polymerization initiator were dissolved in 300 ml of THF (tetrahydrofuran). Next, the solution was subjected to nitrogen bubbling for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C., and then cooled to room temperature. Next, after the reaction solution was concentrated by an evaporator, the concentrated solution was dissolved in 150 ml of THF, and poured into a mixed solvent of 850 ml of heptane and 150 ml of isopropyl alcohol to precipitate a resin, followed by filtration. The obtained resin was dried in a dryer at 40 ° C. for 24 hours to obtain 11.75 g of a white solid (yield: 63.2%).
得られた榭脂の化学式は下記化学式 (8)の通りである。その質量平均分子量 (Mw )は 9700、分散度(MwZMn)は 1. 76であった。これを榭脂 12とする。  The chemical formula of the obtained resin is as shown in the following chemical formula (8). Its mass average molecular weight (Mw) was 9,700 and the degree of dispersion (MwZMn) was 1.76. This is referred to as resin 12.
カーボン NMRにより確認したところ、組成比(モル0 /0)は mZn= 20Z80であった Was confirmed by carbon NMR, the composition ratio (mol 0/0) was mZn = 20Z80
[0117] [化 18] [0117] [Formula 18]
Figure imgf000039_0001
Figure imgf000039_0001
[0118] 合成例 1〜12で得られた榭脂の組成 (モル%)、質量平均分子量、分散度をまとめて[0118] The composition (mol%), mass average molecular weight, and dispersity of the resins obtained in Synthesis Examples 1 to 12 were summarized.
¾klに した。 ¾kl.
[0119] [表 1] [0119] [Table 1]
Figure imgf000040_0001
Figure imgf000040_0001
[0120] [レジスト組成物の製造] [0120] [Production of resist composition]
表 2に記載の材料を混合して、各実施例、比較例のネガ型レジスト組成物を製造し た。  The materials shown in Table 2 were mixed to produce negative resist compositions of Examples and Comparative Examples.
なお、溶剤使用量はレジスト固形分濃度が約 8質量%となるように調節した。  The amount of the solvent used was adjusted so that the resist solid content concentration was about 8% by mass.
[0121] [表 2] (D)含窒素 [0121] [Table 2] (D) Nitrogen containing
(A)榭脂 (B)酸発生剤 (C)架橋剤 有機溶剤  (A) Resin (B) Acid generator (C) Crosslinker Organic solvent
有機化合物  Organic compounds
榭脂 1 TPS-PFBS Binderl トリイソフ' U!\' ルァミン 実施例 1 PGWE  榭 脂 1 TPS-PFBS Binderl Triisov 'U! \' Luamine Example 1 PGWE
(100W量部) (2質量部) 量部) .4質量部)  (100W parts) (2 parts) parts) .4 parts)
樹脂 2 TPS-PFBS Binder! トリイソフ' Ql\' ルアミン 実施例 2 PGME  Resin 2 TPS-PFBS Binder! Triisophor 'Ql \' Luamine Example 2 PGME
(100質量部) (2質量部) (10質量部) (0.4SS部)  (100 parts by mass) (2 parts by mass) (10 parts by mass) (0.4SS part)
樹脂 3 TPS-PFBS Binderl 卜リイソフ'ロハ' ルアミン 実施例 3 PGME  Resin 3 TPS-PFBS Binderl Triisophthalamine Example 3 PGME
(100»量部) (2 量部〉 (10K量部) (0.4g»部)  (100 parts by weight) (2 parts by weight) (10 K parts by weight) (0.4 g part by weight)
樹脂 9 TPS-TF Binderl トリイソァ DA'ノールァミン 実施例 4 PGME  Resin 9 TPS-TF Binderl Triisoa DA 'Nolamine Example 4 PGME
(100質量部) (2H量部) (5S量部) (0.4質置部)  (100 parts by mass) (2H part) (5S part) (0.4 storage part)
樹脂 9 TPS-TF Binderl トリイソフ' ΡΛ'ノ-ルァミン 実施例 5 PGME  Resin 9 TPS-TF Binderl Triisov 'ΡΛ'-noramine Example 5 PGME
(100 燈部) (2質量部) (10S量部) (0.4質璗部)  (100 lights) (2 parts by mass) (10S amount) (0.4 quality part)
樹脂 5 TPS-TF Binderl ト ソフ' D/\'ノ-ルァミン 実施例 6 PG E  Resin 5 TPS-TF Binderl Tosof 'D / \' noramine Example 6 PG E
(100M量部) (2K量部) (5K量部) (0.4g量部)  (100M part) (2K part) (5K part) (0.4g part)
樹脂 4 TPS-TF Binder! トリイソフ'ロハ'  Resin 4 TPS-TF Binder!
実施例 7 /一ル^ン  Example 7 / one run
PGME  PGME
量部) (2g量部) 00質量部〉 (0,4質 S部) 樹脂 4 TPS-TF Binderl トリイソフ' fl/V J-A7V/ 実施例 8 PGME  Parts) (2g parts) 00 parts by mass> (0,4 quality S part) Resin 4 TPS-TF Binderl Triisov 'fl / V J-A7V / Example 8 PGME
(100S量部) (2質量部) (5g量部) (0.4K轚部)  (100S part) (2 parts by mass) (5g part) (0.4K 轚 part)
樹脂 6 TPS-TF Binderl トリイソァ αハ'ノ-ルァミン 実施例 9 PGME  Resin 6 TPS-TF Binderl Triisoa α-noramine Example 9 PGME
(100 量部) (2質量部) (10質量部) (0.4質 S部)  (100 parts by weight) (2 parts by weight) (10 parts by weight) (0.4 quality S part)
樹脂 S TPS-TF Binderl トリイソ; αハ' /-ルァミン 実施例 10 PGME  Resin S TPS-TF Binderl Triiso; αha '/-lamine Example 10 PGME
(100貿量部) (2K量部) (5S量部) (0.4質里部)  (100 trade department) (2K quantity department) (5S quantity department) (0.4 quality section)
樹脂 8 TPS-TF Binderl トリ ノフ' ノ-ル 7ミン 実施例 11 PGME  Resin 8 TPS-TF Binderl Trinov 'Nol 7min Example 11 PGME
(100質量部) (2賓垦部) (5質量部) (0.4S量部)  (100 parts by mass) (2 bins) (5 parts by mass) (0.4S parts)
樹脂 1 1 TPS-TF Binderl トリイソフ' P/Vノ-ル 7ミン 比■ 1 PGME  Resin 1 1 TPS-TF Binderl Triisof 'P / V Knol 7min Ratio ■ 1 PGME
(ιοοΚ量部) (2質量部) (10S量部) (0.4質量部)  (ιοοΚ parts) (2 parts by weight) (10S parts) (0.4 parts by weight)
樹脂 1 2 TPS-PFBS Binder2 4—フ Iニルヒ 'り';/ン  Resin 1 2 TPS-PFBS Binder2 4—F
比較例 2 PGME  Comparative Example 2 PGME
(100質量部) (1K量部) (10質量部) (0.4¾量部)  (100 parts by mass) (1K parts) (10 parts by mass) (0.4 parts by mass)
TPS-PFBS→トリフエニルスルホニゥムノナフルォロブタンスルホネート  TPS-PFBS → triphenylsulfonidum nonafluorobutanesulfonate
TPS- TF→トリフエニルスルホニゥムトリフルォロメタンスルホネート  TPS-TF → triphenylsulfonium trifluoromethanesulfonate
Binderl→M x270 (製品名、 三和ケミカル社製)  Binderl → M x270 (product name, manufactured by Sanwa Chemical Co., Ltd.)
テトラメトキシメチル化グリコ一ルゥリル  Tetramethoxymethylated glycoperyl
Binder2→E6301 (製品名、 三和ケミカル社製)  Binder2 → E6301 (Product name, manufactured by Sanwa Chemical Co., Ltd.)
テトラブトキシメチル化グリコ一ルゥリル  Tetrabutoxymethylated glycoperyl
[評価] [Evaluation]
実施例、比較例のネガ型レジスト組成物は以下の様にして評価した。  The negative resist compositions of Examples and Comparative Examples were evaluated as follows.
有機系反射防止膜組成物「AR— 19」(商品名、シップレー社製)を、スピンナーを 用いて 8インチシリコンゥエーハ上に塗布し、ホットプレート上で 215°C、 60秒間焼成 して乾燥させることにより、表 3に示す膜厚の有機系反射防止膜を形成した。 そして、上記の製造したネガ型レジスト組成物を、スピンナーを用いて反射防止膜 上に塗布し、ホットプレート上で表 3に示す条件でプレベータ(PAB)し、乾燥すること により、表 3に示す膜厚のレジスト層を形成した。 Organic anti-reflective coating composition “AR-19” (trade name, manufactured by Shipley) is applied on an 8-inch silicon wafer using a spinner, baked on a hot plate at 215 ° C for 60 seconds, and dried. As a result, an organic antireflection film having a film thickness shown in Table 3 was formed. Then, the negative resist composition manufactured as described above is applied on an antireflection film using a spinner, pre-betaed (PAB) on a hot plate under the conditions shown in Table 3, and dried to obtain the composition shown in Table 3. A resist layer having a thickness was formed.
ついで、 ArF露光装置 NSR—S302 (ニコン社製; NA (開口数) =0. 60, 2Z3輪 帯)により、 ArFエキシマレーザー(193nm)を、マスクパターン(バイナリー)を介して 選択的に照射した。  Next, an ArF excimer laser (193 nm) was selectively irradiated through a mask pattern (binary) using an ArF exposure apparatus NSR-S302 (manufactured by Nikon Corporation; NA (numerical aperture) = 0.60, 2Z3 orb). .
そして、表 3に示す条件で PEB処理し、さらに 23°Cにて 2. 38質量%テトラメチルァ ンモニゥムヒドロキシド水溶液で 60秒間パドル現像し、その後 20秒間水洗して乾燥し てレジストパターンを形成した。  Then, PEB treatment was performed under the conditions shown in Table 3, followed by paddle development at 23 ° C with a 2.38% by weight aqueous solution of tetramethylammonium hydroxide for 60 seconds, followed by washing with water for 20 seconds and drying to form a resist pattern. Formed.
[0123] このとき、実施例については 140nmのラインアンドスペースパターン(L&Sまたは LSと示す)において、ラインとスペースの幅が 1 : 1で形成される露光量 (感度)を求め た。比較例については 160nmのラインアンドスペースパターン(L&S)において、ラ インとスペースの幅が 1: 1で形成される露光量 (感度)を求めた。 [0123] At this time, in the example, in a 140 nm line-and-space pattern (denoted as L & S or LS), the exposure amount (sensitivity) at which the width of the line and space was formed at 1: 1 was obtained. For the comparative example, the exposure amount (sensitivity) at which the line and space width was 1: 1 in a 160 nm line and space pattern (L & S) was determined.
そして、 L&Sパターンのサイズを変更してこの露光量で解像できる限界解像度 (解 像性評価)を求めた。  Then, by changing the size of the L & S pattern, the limit resolution (resolution evaluation) that can be resolved with this exposure amount was determined.
さらに走査型電子顕微鏡で、パターンの断面形状を観察し、膨潤について評価し た。  Further, the cross-sectional shape of the pattern was observed with a scanning electron microscope to evaluate swelling.
結果を表 4に示した。  Table 4 shows the results.
[0124] [表 3] [0124] [Table 3]
レジス卜 Register
基板 反射防止膜 PAB PEB  Substrate Anti-reflective coating PAB PEB
膜厚  Film thickness
8インチ AR ~ 1 9  8 inch AR ~ 1 9
実施例 1 200nm 90°C/60秒 100 /60秒 シリコンゥエー八 8 2 r>m Example 1 200 nm 90 ° C / 60 seconds 100/60 seconds Silicon A 8 8 r> m
8インチ AR— 1 9  8 inch AR—1 9
実施例 2 200nm 90ΐ:/60秒 100で/60秒 シリコンゥエー八 8 2 ran Example 2 200 nm 90ΐ: / 60 sec. At 100/60 sec.
Sインチ AR - 1 9  S-inch AR-1 9
実施例 3 200nm 90°C/60秒 100°C/60秒 シリコンゥェ一八 8 2 nm Example 3 200 nm 90 ° C / 60 sec. 100 ° C / 60 sec.
8ィンチ AR- 1 9  8inch AR-1 9
実旌例 4 200nm 8CTC/60秒 100。Cノ 60¾* Jeongjeon 4 200nm 8CTC / 60 seconds 100. C no 60¾ *
シリコンゥェ一ハ 8 2 nm  Silicon wafer 8 2 nm
8インチ  8 inches
実旌例 5 200nm 8CTC/60秒 100。C/60秒 シリコンゥェ一八 Actual example 5 200nm 8CTC / 60sec 100. C / 60 seconds Silicone 18
8ィンチ  8 inch
実施例 6 200nm 80°C/60秒 100°Cノ 60秒 シリコンゥェ一八 Example 6 200 nm 80 ° C / 60 sec. 100 ° C No. 60 sec.
8ィンチ > AR - 1 9  8 inch> AR-1 9
実施例 7 200nm 80°C/60秒 100°C/60秒 シリコンゥエーハ 8 2 nm Example 7 200 nm 80 ° C / 60 seconds 100 ° C / 60 seconds Silicon wafer 82 nm
8ィンチ AR—コ * 1 _ 9  8-inch AR—Co * 1 _ 9
II施例 8 200nm 80^C/60秒 100°C/60秒 シリコンゥェ一八 8 2 nm  II Example 8 200nm 80 ^ C / 60sec 100 ° C / 60sec Silicon layer 82nm
8ィンチ AR - 1 9  8inch AR-1 9
実施例 9 200nm 80。C/60秒 100°C/60秒 シリコンゥェ一ハ 8 2 nm Example 9 200 nm 80. C / 60 sec 100 ° C / 60 sec Silicon wafer 8 2 nm
8ィンチ AR— 1 9  8-inch AR—1 9
実施例 10 200nm 80=0/60秒 1001C/60秒 シリコンゥエー八 8 2 nm Example 10 200 nm 80 = 0/60 sec. 1001 C / 60 sec.
8インチ AR - 1 9  8 inch AR-1 9
実施例 1 1 200nm 80¾/60秒 10CTC/60秒 シリコンゥェ一ハ & 2 nm Example 1 1 200nm 80¾ / 60sec 10CTC / 60sec Silicon wafer & 2nm
8インチ AR - 1 9  8 inch AR-1 9
比較例 1 200nm 80で /60秒 Comparative Example 1/60 sec at 200nm 80
シリコンゥェ一八 8 2 nm  Silicone 18 2 nm
8インチ AR - 1 9  8 inch AR-1 9
比較例 2 300nm 1 10t/60秒 nO°C/60秒 シリコンゥェ一ハ 8 2 nm Comparative Example 2 300 nm 1 10 t / 60 sec nO ° C / 60 sec Silicon wafer 8 2 nm
AR— 1 9→製品名、 シプレー社製の有機反射防止膜 AR—19 → Product name, Shipley's organic anti-reflective coating
解像性 パターン形状※2 感度※1 Resolution Pattern shape * 2 Sensitivity * 1
実施例 1 1 3 0 nm L S © ^mJ/cm^  Example 1 130 nm L S © ^ mJ / cm ^
実施例 2 1 2 0 nm L S ◎ 41 m J /cm2 Example 2 120 nm LS ◎ 41 m J / cm 2
実施例 3 1 3 0 nmし S Q 42mJ/cm2 Example 3 130 nm SQ 42 mJ / cm 2
実施例 4 1 2 0 nm L S ◎ 29mJ/cm2 Example 4 120 nm LS ◎ 29 mJ / cm 2
実施例 5 1 2 0 nm L S ◎ 32mJ/cm  Example 5 120 nm L S ◎ 32 mJ / cm
実施例 6 1 3 0 nm L S 〇 29mj/cm2 Example 6 130 nm LS 〇 29 mj / cm 2
実施例 7 1 5 0 nm L S 〇 31 mJ/cm2 Example 7 150 nm LS 〇 31 mJ / cm 2
実施例 8 1 2 O nm L S © 30mJ/cm2 Example 8 1 2 O nm LS © 30 mJ / cm 2
実施例 9 1 2 O nm L S O 29mJ/cm2 Example 9 12 O nm LSO 29 mJ / cm 2
実施例 10 1 3 0 nm L S © 27mJ/cm2 Example 10 13 nm nm LS © 27 mJ / cm 2
実施例 1 1 1 2 0 nm L S 〇 31 mJ/cm2 Example 1 1 1 2 0 nm LS 〇 31 mJ / cm 2
.比較例 1 解像しなかった - ―  Comparative Example 1 No resolution--
比較例 2 l 6 O nmし S X 20mJ/cm2 Comparative Example 2 l 6 O nm SX 20 mJ / cm 2
1感度は 1 4 0 n m 1 : 1の L & Sパターンが得られる際の感度  1 Sensitivity is the sensitivity at which an L & S pattern of 1400 nm 1: 1 is obtained
(比較例は" I 6 0 n m 1 : 1の L & Sパターン) 。  (Comparative example is "I 60 nm 1: 1 L & S pattern").
◎—膨潤なく、 矩形性の高いレジストパターンであった  ◎ —Rectangular resist pattern without swelling
〇→τορ部分にわずかに膨溷が見受けられるが,  There is a slight expansion in the 部分 → τορ part,
実用上問題のない程度の、 矩形性の良好なレジストパターンであった。  The resist pattern had a good rectangularity without any practical problem.
χ—膨潤がひどいレジストパターンであった。  χ—The resist pattern had severe swelling.
[0126] 表 4に示した結果より、本発明に係る実施例では、膨潤を抑制し、かつ微細なレジ ストパターンを形成できることが確認できた。 From the results shown in Table 4, it was confirmed that in Examples according to the present invention, swelling was suppressed and a fine resist pattern could be formed.
[0127] '合成例 13 [0127] 'Synthesis example 13
NBHFAA13. 3g、 RHMA— M3. 13g、及び AdOHA6. Ogと、重合開始剤であ るァゾビスイソ酢酸ジメチル 0. 7gとを THF (テトラヒドロフラン) 200mlに溶解した。次 に、この溶液に窒素バブリングを約 10分間施し、 70°Cのオイルバスを用いて加温し ながら 4時間攪拌し、その後室温まで冷却した。次に、反応液をエバポレーターで濃 縮した後、濃縮液を THF120mlに溶解し、ヘプタン 1000mlに注ぎ込むことで榭脂 を析出させ、濾過した。得られた榭脂を乾燥機中 40°C、 24時間乾燥させて白色固体 14. 9gを得た(収率 66. 5%)。  13.3 g of NBHFAA, 13 g of RHMA-M, 13 Og of AdOHA, and 0.7 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). Next, this solution was subjected to nitrogen bubbling for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C, and then cooled to room temperature. Next, after concentrating the reaction solution with an evaporator, the concentrated solution was dissolved in 120 ml of THF, and poured into 1000 ml of heptane to precipitate a resin, followed by filtration. The obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 14.9 g of a white solid (yield: 66.5%).
得られた榭脂の化学式は下記化学式 (9)である。その質量平均分子量 (Mw)は 6 300、分散度(MwZMn)は 1. 83であった。カーボン NMRにより確認したところ、組 成比(モル0 /0)は lZmZn=42Z29Z29であった。これを榭脂 13とする。 [0128] [化 19] The chemical formula of the obtained resin is the following chemical formula (9). Its mass average molecular weight (Mw) was 6,300 and the degree of dispersion (MwZMn) was 1.83. Was confirmed by carbon NMR, set composition ratio (mol 0/0) was lZmZn = 42Z29Z29. This is referred to as resin 13. [0128] [Formula 19]
Figure imgf000045_0001
Figure imgf000045_0001
[0129] '合成例 14 [0129] 'Synthesis example 14
NBHFAA13. 3g、 HEMA3. 51g、及び AdOHA6. Ogと、重合開始剤であるァ ゾビスイソ酢酸ジメチル 0. 7gとを THF (テトラヒドロフラン) 200mlに溶解した。次に、 この溶液に窒素パブリングを約 10分間施し、 70°Cのオイルバスを用いて加温しなが ら 4時間攪拌し、その後室温まで冷却した。次に、反応液をエバポレーターで濃縮し た後、濃縮液を THF 150mlに溶解し、ヘプタン 1000mlに注ぎ込むことで榭脂を析 出させ、濾過した。次に、析出した榭脂を取り出し、 THF 150mlに溶解した後、ヘプ タン 2000mlに注ぎ込むことで榭脂を析出させ、濾過した。得られた榭脂を乾燥機中 40°C、 24時間乾燥させて、白色固体 19. 8gを得た (収率 86. 8%)。  13.3 g of NBHFAA, 3.51 g of HEMA, 6.0 g of AdOHA, and 0.7 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). Next, the solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C., and then cooled to room temperature. Next, after concentrating the reaction solution with an evaporator, the concentrate was dissolved in 150 ml of THF, and poured into 1000 ml of heptane to precipitate a resin, followed by filtration. Next, the precipitated resin was taken out, dissolved in 150 ml of THF, and poured into 2,000 ml of heptane to precipitate the resin, followed by filtration. The obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 19.8 g of a white solid (yield: 86.8%).
得られた榭脂は前記化学式 (4)で示す。その質量平均分子量 (Mw)は 7500、分 散度(MwZMn)は 2. 15であった。  The obtained resin is represented by the chemical formula (4). Its mass average molecular weight (Mw) was 7,500, and its dispersion (MwZMn) was 2.15.
カーボン NMRにより確認したところ、組成比(モル0 /0)は lZmZn=42Z42Z29 であった。これを榭脂 14とする。 Was confirmed by carbon NMR, the composition ratio (mol 0/0) was lZmZn = 42Z42Z29. This is referred to as resin 14.
[0130] '合成例 15 [0130] 'Synthesis example 15
NBHFAA13. 3g、 HEMA2. 54g、及び AdOHA4. 34gと、重合開始剤である ァゾビスイソ酢酸ジメチル 0. 7gとを THF (テトラヒドロフラン) 200mlに溶解した。次に 、この溶液に窒素パブリングを約 10分間施し、 70°Cのオイルバスを用いて加温しな 力 4時間攪拌し、その後室温まで冷却した。次に、反応液をエバポレーターで濃縮 した後、濃縮液を THF150mlに溶解し、ヘプタン 1000mlに注ぎ込むことで榭脂を 析出させ、濾過した。次に、析出した榭脂を取り出し、 THF 150mlに溶解した後、へ ブタン 2000mlに注ぎ込むことで榭脂を析出させ、濾過した。得られた榭脂を乾燥機 中 40°C、 24時間乾燥させて、白色固体 14. 9gを得た (収率 73. 8%)。 13.3 g of NBHFAA, 2.54 g of HEMA, 4.34 g of AdOHA and 0.7 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). next This solution was subjected to nitrogen publishing for about 10 minutes, and the mixture was stirred for 4 hours while heating using a 70 ° C oil bath, and then cooled to room temperature. Next, the reaction solution was concentrated by an evaporator, and the concentrated solution was dissolved in 150 ml of THF, and poured into 1000 ml of heptane to precipitate a resin, followed by filtration. Next, the precipitated resin was taken out, dissolved in 150 ml of THF, and poured into 2000 ml of heptane to precipitate the resin, followed by filtration. The obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 14.9 g of a white solid (yield: 73.8%).
得られた榭脂は前記化学式 (4)で示す。その質量平均分子量 (Mw)は 6500、分 散度(MwZMn)は 1. 92であった。  The obtained resin is represented by the chemical formula (4). Its mass average molecular weight (Mw) was 6,500 and the degree of dispersion (MwZMn) was 1.92.
カーボン NMRにより確認したところ、組成比(モル0 /0)は lZmZn=50Z25Z25 であった。これを榭脂 15とする。 Was confirmed by carbon NMR, the composition ratio (mol 0/0) was lZmZn = 50Z25Z25. This is referred to as resin 15.
[0131] ·合成例 16 [0131] · Synthesis example 16
NBHFAA9. 19g、及び AdOHA6. Ogと、重合開始剤であるァゾビスイソ酢酸ジメ チル 0. 5gとを THF (テトラヒドロフラン) 200mlに溶解した。次に、この溶液に窒素バ ブリングを約 10分間施し、 70°Cのオイルバスを用いて加温しながら 4時間攪拌し、そ の後室温まで冷却した。次に、反応液をエバポレーターで濃縮した後、濃縮液を TH FlOOmlに溶解し、ヘプタン 2000mlに注ぎ込むことで榭脂を析出させ、濾過した。 得られた榭脂を乾燥機中 40°C、 24時間乾燥させて白色固体 11. 4gを得た (収率 75 . 0%)。  9.1 g of NBHFAA, 6.0 g of AdOHA, and 0.5 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). Next, the solution was subjected to nitrogen bubbling for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C., and then cooled to room temperature. Next, after the reaction solution was concentrated by an evaporator, the concentrated solution was dissolved in THF, and poured into 2,000 ml of heptane to precipitate a resin, followed by filtration. The obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 11.4 g of a white solid (yield: 75.0%).
得られた榭脂の化学式は前記化学式 (5)である。その質量平均分子量 (Mw)は 3 100、分散度(MwZMn)は 1. 68であった。カーボン NMRにより確認したところ、組 成比(モル0 /0)は lZn= 60Z40であった。これを榭脂 16とする。 The chemical formula of the obtained resin is the above-mentioned chemical formula (5). Its mass average molecular weight (Mw) was 3100 and the degree of dispersion (MwZMn) was 1.68. Was confirmed by carbon NMR, set composition ratio (mol 0/0) was lZn = 60Z40. This is referred to as resin 16.
[0132] '合成例 17 [0132] 'Synthesis example 17
NBHFAA12. 25g、 HEMA2. 34g、 AdOHA6. 0g、及び GBLA1. 40gと、重 合開始剤であるァゾビスイソ酢酸ジメチル 0. 7gとを THF (テトラヒドロフラン) 200ml に溶解した。次に、この溶液に窒素パブリングを約 10分間施し、 70°Cのオイルバスを 用いて加温しながら 4時間攪拌し、その後室温まで冷却した。次に、反応液をエバポ レーターで濃縮した後、濃縮液を THF200mlに溶解し、ヘプタン 2000mlに注ぎ込 むことで榭脂を析出させ、濾過した。得られた榭脂を乾燥機中 40°C、 24時間乾燥さ せて、白色固体 10. 9gを得た(収率 49. 6%)。 12.25 g of NBHFAA, 34 g of HEMA, 6.0 g of AdOHA and 1.40 g of GBLA and 0.7 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). Next, the solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C, and then cooled to room temperature. Next, after the reaction solution was concentrated by an evaporator, the concentrated solution was dissolved in 200 ml of THF, and poured into 2,000 ml of heptane to precipitate a resin, followed by filtration. The obtained resin is dried in a dryer at 40 ° C for 24 hours. As a result, 10.9 g of a white solid was obtained (yield: 49.6%).
得られた榭脂は前下記化学式 (10)で示す。その質量平均分子  The obtained resin is represented by the following chemical formula (10). Its mass average molecule
分散度(MwZMn)は 2.23であった。  The dispersity (MwZMn) was 2.23.
カーボン NMRにより確認したところ、組成比(モル%)は lZmZ  Confirmed by carbon NMR, the composition ratio (mol%) was lZmZ
30Z10であった。これを榭脂 17とする。  It was 30Z10. This is referred to as resin 17.
[0133] [化 20] [0133] [Formula 20]
Figure imgf000047_0001
Figure imgf000047_0001
[0134] '合成例 18 [0134] 'Synthesis example 18
NBHFAA12. 25g、 HEMA2. 34g、 AdOHA6. Og、及び NBLA2. Ogと、重合 開始剤であるァゾビスイソ酢酸ジメチル 0. 7gとを THF (テトラヒドロフラン) 200mlに 溶解した。次に、この溶液に窒素パブリングを約 10分間施し、 70°Cのオイルバスを 用いて加温しながら 4時間攪拌し、その後室温まで冷却した。次に、反応液をエバポ レーターで濃縮した後、濃縮液を THF200mlに溶解し、ヘプタン 2000mlに注ぎ込 むことで榭脂を析出させ、濾過した。得られた榭脂を乾燥機中 40°C、 24時間乾燥さ せて、白色固体 13. 9gを得た(収率 61. 5%)。 12.25 g of NBHFAA, 34 g of HEMA, 6.0 g of AdOHA, and 2.0 g of NBLA, and 0.7 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). Next, the solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C, and then cooled to room temperature. Next, after concentrating the reaction solution with an evaporator, the concentrated solution is dissolved in 200 ml of THF and poured into 2000 ml of heptane. The resin was precipitated by filtration and filtered. The obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 13.9 g of a white solid (yield: 61.5%).
得られた榭脂は下記化学式(11)で示す。その質量平均分子量 (Mw)は 5600、分 散度(MwZMn)は 2.24であった。  The obtained resin is represented by the following chemical formula (11). Its mass average molecular weight (Mw) was 5,600 and its dispersion (MwZMn) was 2.24.
カーボン NMRにより確認したところ、組成比(モル0 /0) «l/m/n/o= 40/20/ 30Z10であった。これを榭脂 18とする。 Was confirmed by carbon NMR, it was a composition ratio (mol 0/0) «l / m / n / o = 40/20 / 30Z10. This is called resin 18.
[0135] [化 21] [0135] [Formula 21]
Figure imgf000048_0001
Figure imgf000048_0001
[0136] '合成例 19 [0136] 'Synthesis example 19
NBHFAA9. 19g、 AdOHA6. Og、及び NBLA1. 33gと、重合開始剤であるァゾ ビスイソ酢酸ジメチル 0. 7gとを THF (テトラヒドロフラン) 200mlに溶解した。次に、こ の溶液に窒素パブリングを約 10分間施し、 70°Cのオイルバスを用いて加温しながら 4時間攪拌し、その後室温まで冷却した。次に、反応液をエバポレーターで濃縮した 後、濃縮液を THF200mlに溶解し、ヘプタン 2000mlに注ぎ込むことで榭脂を析出 させ、濾過した。得られた榭脂を乾燥機中 40°C、 24時間乾燥させて、白色固体 13. 3gを得た(収率 80. 5%)。  9.19 g of NBHFAA, 6.33 g of AdOHA, and 1.33 g of NBLA, and 0.7 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). Next, this solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C, and then cooled to room temperature. Next, after concentrating the reaction solution with an evaporator, the concentrate was dissolved in 200 ml of THF, and poured into 2000 ml of heptane to precipitate a resin, followed by filtration. The obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 13.3 g of a white solid (yield: 80.5%).
得られた榭脂は下記化学式(12)で示す。その質量平均分子量 (Mw)は 3100、分 散度(MwZMn)は 1.77であった。 カーボン NMRにより確認したところ、組成比(モル0 /0) «l/m/n=45/45/10 であった。これを榭脂 19とする。 The obtained resin is represented by the following chemical formula (12). Its mass average molecular weight (Mw) was 3100 and the degree of dispersion (MwZMn) was 1.77. Was confirmed by carbon NMR, the composition ratio (mol 0/0) «was l / m / n = 45/ 45/10. This is referred to as resin 19.
[化 22] [Formula 22]
Figure imgf000049_0001
Figure imgf000049_0001
·合成例 20 Synthetic example 20
NBHFAA9. 19g、 AdOHA6. Og、及び GBLAO. 93gと、重合開始剤であるァゾ ビスイソ酢酸ジメチル 0. 7gとを THF (テトラヒドロフラン) 200mlに溶解した。次に、こ の溶液に窒素パブリングを約 10分間施し、 70°Cのオイルバスを用いて加温しながら 4時間攪拌し、その後室温まで冷却した。次に、反応液をエバポレーターで濃縮した 後、濃縮液を THF200mlに溶解し、ヘプタン 2000mlに注ぎ込むことで榭脂を析出 させ、濾過した。得られた榭脂を乾燥機中 40°C、 24時間乾燥させて、白色固体 12. 4gを得た(収率 76. 9%)。  9.1 g of NBHFAA, 6.0 g of AdOHA, 93 g of GBLAO, and 0.7 g of dimethyl azobisisoacetate as a polymerization initiator were dissolved in 200 ml of THF (tetrahydrofuran). Next, this solution was subjected to nitrogen publishing for about 10 minutes, stirred for 4 hours while heating using an oil bath at 70 ° C, and then cooled to room temperature. Next, after the reaction solution was concentrated by an evaporator, the concentrate was dissolved in 200 ml of THF, and poured into 2000 ml of heptane to precipitate a resin, followed by filtration. The obtained resin was dried in a drier at 40 ° C. for 24 hours to obtain 12.4 g of a white solid (yield: 76.9%).
得られた榭脂は下記化学式(13)で示す。その質量平均分子量 (Mw)は 3000、分 散度(MwZMn)は 1. 83であった。  The obtained resin is represented by the following chemical formula (13). Its mass average molecular weight (Mw) was 3000 and the degree of dispersion (MwZMn) was 1.83.
カーボン NMRにより確認したところ、組成比(モル0 /0) «l/m/n=45/45/10 であった。これを榭脂 20とする。 [0139] [化 23] Was confirmed by carbon NMR, the composition ratio (mol 0/0) «was l / m / n = 45/ 45/10. This is referred to as resin 20. [0139] [Formula 23]
Figure imgf000050_0001
Figure imgf000050_0001
[0140] 合成例 13〜20で得られた榭脂の組成 (モル%)、質量平均分子量 (Mw)、分散 [0140] Composition (mol%), mass average molecular weight (Mw), dispersion of the resin obtained in Synthesis Examples 13 to 20
(Mw/Mn)をまとめて表 5に示した。  (Mw / Mn) is summarized in Table 5.
[0141] [表 5] NBHFAA HEM A H A-M AdOHA GBLA NBLA Mw Mw/Mn 合成例 1 3 42 一 29 29 [0141] [Table 5] NBHFAA HEM AH AM AdOHA GBLA NBLA Mw Mw / Mn Synthesis example 1 3 42 1 29 29
(樹脂 1 3 ) ― ― 6300 1.83 合成例 1 42 29  (Resin 13) ― ― 6300 1.83 Synthesis example 1 42 29
(樹脂 1 4 ) ― 29 ― ― 7500 2.15 合成例 1 5 50 25 ― 25 ― ― 6500 1.92 (樹指, 5)  (Resin 14) ― 29 ― ― 7500 2.15 Synthesis example 1 5 50 25 ― 25 ― ― 6500 1.92 (Tree finger, 5)
合成例 1 6 50 ― ― 50 ― ― 3100 1.68 (樹脂 1 6)  Synthesis example 1 6 50 ― ― 50 ― ― 3100 1.68 (Resin 16)
合成例 1 7 40 20 30 10 ― 6000 2.23 (纖 1 7)  Synthesis example 1 7 40 20 30 10 ― 6000 2.23 (Fiber 17)
合成例 1 8 40 20 ― 30 一 10 5600 2.24 (樹脂 1 8)  Synthesis example 1 8 40 20 ― 30 1 10 5600 2.24 (Resin 18)
合成例 1 9  Synthesis Example 1 9
(樹脂 1 9 ) 45 ― 一 45 ― 10 3100 1.77 合成例 20  (Resin 19) 45 ― 1 45 ― 10 3100 1.77 Synthesis example 20
(樹脂 20 ) 45 ― ― 45 10 ― 3000 1.83  (Resin 20) 45 ― ― 45 10 ― 3000 1.83
[レジスト組成物の製造] [Production of resist composition]
表 6に記載の材料を混合して、各実施例、比較例のネガ型レジスト組成物を製造し  The materials described in Table 6 were mixed to produce negative resist compositions of Examples and Comparative Examples.
表 6] ( D )含窒素 [Table 6] (D) Nitrogen-containing
( A)樹脂 ( B )酸発生剤 ( C )架橋剤 有機溶剤  (A) Resin (B) Acid generator (C) Crosslinker Organic solvent
有機化合物  Organic compounds
樹脂 1 3 TPS-TF Binderl WW ΠΑ"ゾ -ルァミン PGME  Resin 1 3 TPS-TF Binderl WW ΠΑ "Zolamine PGME
実施例 1 2  Example 1 2
(1 00SS部) (2貿量郃) (5質 a部) (0-4貸量部) (2000質 S部) 樹脂 1 4 TPS-TF Binderl トリイソフ'
Figure imgf000052_0001
ノ-ル 7ミン
(1 00SS part) (2 trade volume ②) (5 quality a part) (0-4 lending part) (2000 quality S part) Resin 1 4 TPS-TF Binderl Triisov '
Figure imgf000052_0001
Knoll 7 Min
実施例 1 3  Example 1 3
(2質 S部) ( 1 0質3部> (0.4¾S部) (2000質量部 > 榭脂 7 TPS-TF Binderl トリイリフ' ar ノ- Aァミン PG E  (2 parts S part) (10 parts 3 part)> (0.4¾S part) (2000 parts by mass> resin 7 TPS-TF Binderl Tririf'ar no-Aamine PG E
実施例 1 4  Example 14
00S量部) (2質量部) (5質量部) (0.4H置部) (2000質量部) (00S parts) (2 parts by mass) (5 parts by mass) (0.4H storage part) (2000 parts by mass)
^ 5 TPS-TF Binderl トリ プ ar /-ルァミン PGME  ^ 5 TPS-TF Binderl trip ar / -lamine PGME
実施例 1 5  Example 1 5
( 100質量部) ( 2¾量部) <5質 S部) (0.4質量部) (2000S量部) 樹脂 1 6 TPS-TF Binderl トリイリフ' U /-ル 7ミン PGME  (100 parts by mass) (2 parts by mass) <5 parts by mass S) (0.4 parts by mass) (2000 parts by mass) Resin 16 TPS-TF Binderl Triirif'U / -le 7min PGME
実施例 1 6  Example 16
(賜質 S部) (2質 S部) (5質置部) (0.4質量部) (2000質量都) 樹脂 1 TPS-TF Binderl トリイソフ' iw" PGME  (Grade S section) (2 pieces of S section) (5 pieces of storage section) (0.4 parts by mass) (2000 parts by mass) Resin 1 TPS-TF Binderl Triisov 'iw' PGME
実施例 1  Example 1
< 1 00質&部) (2質量部) (5質量部 > (0.4筲量部) <2000質量部) fttflg l 8 TPS-TF Binderl トリ ゾフ' Ο 'ブ-ル?ミン PGME <1 00 quality & part) (2 parts by mass) (5 parts by weight of> (0.4筲量part) <2000 parts by weight) fttflg l 8 TPS-TF Binderl bird Zoff 'Ο' Breakfast - Le? Min PGME
実施例 1 8  Example 18
<2質8部) (5貿釐部) (0·4質量部) (2000質量部) 樹脂 1 9 TPS-TF Binderl トリイ プ。Λ' /-Wミン PGME  <2 parts 8 parts) (5 parts) (0.4 parts by weight) (2000 parts by weight) Resin 19 TPS-TF Binderl type. Λ '/-W Min PGME
実施例 1 S  Example 1 S
(需質量部> (2K量部) (5質量部) (0.4筲量部 > (2000資璽部) 樹脂 2 0 TPS-TF Binderl ΠΛ" -ルァミン PGME  (Demand parts> (2K parts) (5 parts) (0.4 parts> (2000 parts) Resin 20 TPS-TF Binderl ΠΛ "-Luamine PGME
実施例 2 0  Example 20
< 100質量部) (2質量部) (5質量部) (0.4質量部) (2000質量部) <100 parts by mass) (2 parts by weight) (5 parts by weight) (0.4 parts by weight) (2000 parts by weight)
[0144] [評価] [0144] [Evaluation]
レジストパターン形成時の条件を下記表 7に示す条件に変更したこと以外は、前記 実施例と同様にして、解像性、パターン形状、感度について評価した。その結果を表 8に示した。  The resolution, pattern shape, and sensitivity were evaluated in the same manner as in the above example except that the conditions at the time of forming the resist pattern were changed to the conditions shown in Table 7 below. Table 8 shows the results.
[0145] [表 7] レジス卜 [0145] [Table 7] Register
基板 反射防止膜 PAB PEB 腠厚  Substrate Anti-reflective coating PAB PEB 腠 Thick
8インチ AR-19  8 inch AR-19
実施例 1 2 シリコン 200nm 80 /60沙 秦。 C/60秒 ゥェ—ハ 82nm  Example 1 2 Silicon 200nm 80/60 Qin. C / 60 seconds wafer 82nm
8インチ AR-19  8 inch AR-19
実施例 1 3 シリコン 200nm 80で/60秒 100"C/60秒 ゥェ—ハ 82nm  Example 1 3 Silicon 200nm 80/60 sec 100 "C / 60sec wafer 82nm
8インチ AR-19  8 inch AR-19
実施例 1 シリコン 200nm 80。C/60秒 100 /60秒 ゥェーハ 82nm  Example 1 Silicon 200nm 80. C / 60sec 100 / 60sec wafer 82nm
8インチ AR-19  8 inch AR-19
実施例 1 5 シリコン 200nm 80Π/60秒 100。C/60秒 ゥエーハ 82nm  Example 15 5 Silicon 200nm 80Π / 60 sec 100. C / 60 sec ゥ Ah 82nm
8インチ ARC-29  8 inch ARC-29
実施例 1 6 シリコン 200nm 80で /60秒 100 /60秒 ゥェ一ハ 77nm  Example 16 Silicon / 200 nm 80/60 sec 100/60 sec
8インチ ARC-29  8 inch ARC-29
実施例 1 7 シリコン 200nm 80"C/6O秒 100 /60杪 ゥエーハ 77nm  Example 17 Silicon 200nm 80 "C / 6Osec 100/60 杪 杪 77nm
8インチ ARC-29  8 inch ARC-29
実施例 1 8 シリコン 200nm 80で /60秒 100。C/60秒 ゥェ一ハ 77nm  Example 1 8 Silicon 200 nm 80/60 sec 100. C / 60 sec.
8インチ ARC-29  8 inch ARC-29
実施例】 9 シリコン 2O0nm 80¾/60秒 100。C/6C秒 ゥエーハ 77nm  Example] 9 silicon 2O0nm 80¾ / 60 sec 100. C / 6C second ゥ Aha 77nm
8インチ  8 inches
ARC-29  ARC-29
実施例 20 シりコン 200nm 80 /60秒 100 /60秒 ゥェ一ハ 77nm  Example 20 Silicon 200 nm 80/60 seconds 100/60 seconds
ARC_29→製品名, ブリューヮサイエンス社製 有機反射防止膜 ARC_29 → Product name, organic anti-reflective coating made by Brew Science Inc.
解像性 パターン形状 感度 実施例 1 2 1 4 OnmL S 42mJ/cm2 実施例 1 3 1 2 OnmL S 29mJ/cme 実施例 1 4 1 50 rimし S 26mJ/cm2 実旌例 1 5 1 2 OnmL S 29mJ/cm2 実施例 1 6 1 2 Onm L S ◎ 32mJ/cma 実施例 1 7 1 3 OnmL S ◎ 32mJ/om2 実施例 1 8 1 2 OnmL S ◎ 32mJ/cm2 実施例 1 9 1 2 OnmL S O 30mJ/cm2 実施例 20 1 3 OnmL S o 35mJ/cm2 表 8に示した結果より、本発明に係る実施例では、膨潤を抑制し、かつ微細なレジ ストパターンを形成できることが確認できた。 Resolution Pattern shape Sensitivity Example 1 2 1 4 OnmL S 42mJ / cm 2 Example 1 3 1 2 OnmL S 29mJ / cm e Example 1 4 1 50 rim and S 26mJ / cm 2 Example 1 5 1 2 OnmL S 29 mJ / cm 2 Example 1 6 1 2 Onm LS ◎ 32 mJ / cm a Example 1 7 1 3 OnmL S ◎ 32 mJ / om 2 Example 1 8 1 2 OnmL S ◎ 32 mJ / cm 2 Example 1 9 1 2 OnmL SO 30mJ / cm 2 Example 20 1 3 OnmL S o 35mJ / cm 2 From the results shown in Table 8, it was confirmed that in Examples according to the present invention, swelling was suppressed and a fine resist pattern could be formed.

Claims

請求の範囲 The scope of the claims
[1] フッ素化されたヒドロキシアルキル基を有する脂環式基を含有する構成単位 (al)と [1] a structural unit (al) containing an alicyclic group having a fluorinated hydroxyalkyl group;
、アクリル酸エステルから誘導される構成単位であって、水酸基含有脂環式基を含む 構成単位 (a2)とを有するレジスト組成物用榭脂。 And a structural unit derived from an acrylate ester, and a structural unit (a2) containing a hydroxyl group-containing alicyclic group.
[2] 請求項 1に記載のレジスト組成物用榭脂にぉ 、て、構成単位 (al)力 下記一般式 [2] The resin for a resist composition according to claim 1, wherein a structural unit (al) force is represented by the following general formula:
(1)で表されるレジスト組成物用榭脂。  The resin for a resist composition represented by (1).
[化 1]  [Chemical 1]
「2m+1 C n+1"2m + 1 C n + 1
Figure imgf000055_0001
. . . (1 )
Figure imgf000055_0001
.. (1)
(式中、 Rは水素原子、アルキル基、フッ素化アルキル基またはフッ素原子であり、 m(Wherein, R is a hydrogen atom, an alkyl group, a fluorinated alkyl group or a fluorine atom, m
、 n、 pはそれぞれ独立して 1〜5の整数である。 ) , N, and p are each independently an integer of 1 to 5. )
[3] 請求項 1に記載のレジスト組成物用榭脂にぉ 、て、構成単位 (a2)の脂環式基の炭 素数が 5〜15であるレジスト組成物用榭脂。 [3] The resin for a resist composition according to claim 1, wherein the alicyclic group of the structural unit (a2) has 5 to 15 carbon atoms.
[4] 請求項 1に記載のレジスト組成物用榭脂にぉ 、て、構成単位 (a2)が下記一般式([4] The resin for a resist composition according to claim 1, wherein the structural unit (a2) has the following general formula (
2)で表されるレジスト組成物用榭脂。 The resin for a resist composition represented by 2).
[化 2]
Figure imgf000056_0001
[Chemical 2]
Figure imgf000056_0001
(Rは水素原子、アルキル基、フッ素化アルキル基またはフッ素原子であり、 qは 1〜3 の整数である。 ) (R is a hydrogen atom, an alkyl group, a fluorinated alkyl group or a fluorine atom, and q is an integer of 1-3.)
[5] 請求項 1に記載のレジスト組成物用榭脂にぉ 、て、構成単位 (al)の割合が 20〜8 [5] The resin for a resist composition according to claim 1, wherein the proportion of the structural unit (al) is 20 to 8
0モル0 /0、構成単位 (a2)の割合が 20〜80モル0 /0であるレジスト組成物用榭脂。 0 mole 0/0, 榭脂resist composition ratio of 20 to 80 mole 0/0 structural unit (a2).
[6] 請求項 1に記載のレジスト組成物用榭脂において、さらに、アクリル酸から誘導され[6] The resin for a resist composition according to claim 1, further comprising acrylic acid.
、かつ環式構造を有しない構成単位であって、側鎖にアルコール性水酸基を有する 構成単位 (a3)を有するレジスト組成物用榭脂。 And a structural unit having no cyclic structure and having a structural unit (a3) having an alcoholic hydroxyl group in a side chain.
[7] 請求項 6に記載のレジスト組成物用榭脂にぉ 、て、構成単位 (a3)力 下記一般式 [7] The resin for a resist composition according to claim 6, wherein the structural unit (a3) force is represented by the following general formula:
(3)で表されるレジスト組成物用榭脂。  The resin for a resist composition represented by (3).
[化 3] [Formula 3]
Figure imgf000056_0002
(式中、 R1は水素原子、アルキル基、フッ素化アルキル基、フッ素原子またはヒドロキ シアルキル基であり、 R2は、水素原子、アルキル基、またはヒドロキシアルキル基であ り、かつ 、 R2の少なくとも一方はヒドロキシアルキル基である。 )
Figure imgf000056_0002
(In the formula, R 1 is a hydrogen atom, an alkyl group, fluorinated alkyl group, a fluorine atom or a hydroxy Shiarukiru group, R 2 represents a hydrogen atom, an alkyl group or hydroxyalkyl group der, is, and, the R 2 At least one is a hydroxyalkyl group.)
[8] 請求項 6に記載のレジスト組成物用榭脂にぉ 、て、構成単位 (a3)力 a - (ヒドロ キシアルキル)アクリル酸アルキルエステル力 誘導される構成単位を含むレジスト組 成物用樹脂。 [8] The resin for a resist composition according to claim 6, wherein the constituent unit (a3) is a a- (hydroxyalkyl) alkyl acrylate ester resin for a resist composition containing a derived constituent unit. .
[9] 請求項 6に記載のレジスト組成物用榭脂にぉ 、て、構成単位 (a3)力 ( a—アルキ ル)アクリル酸ヒドロキシアルキルエステル力 誘導される構成単位を含むレジスト組 成物用樹脂。  [9] The resin for a resist composition according to claim 6, wherein a (a3) force (a-alkyl) hydroxyalkyl acrylate is used for a resist composition containing a derived structural unit. resin.
[10] 請求項 6に記載のレジスト組成物用榭脂において、構成単位 (al)の割合が 20〜8 [10] The resin for a resist composition according to claim 6, wherein the proportion of the structural unit (al) is 20 to 8
0モル%、構成単位(a2)の割合が 10〜70モル%、構成単位(a3)の割合が 10〜70 モル0 /0であるレジスト組成物用榭脂。 0 mol%, the proportion is 10 to 70 mol% of the structural unit (a2),榭脂resist composition ratio of 10 to 70 mole 0/0 structural unit (a3).
[11] 請求項 1に記載のレジスト組成物用榭脂において、さらに、ラタトン含有単環または 多環式基を含むアクリル酸エステルから誘導される構成単位 (a4)を有するレジスト組 成物用樹脂。 [11] The resin for a resist composition according to claim 1, further comprising a structural unit (a4) derived from an acrylate ester containing a rataton-containing monocyclic or polycyclic group. .
[12] 請求項 11に記載のレジスト組成物用榭脂にぉ 、て、構成単位 (a4)力 ノルボルナ ンラクトンを含むアクリル酸エステルカゝら誘導される構成単位を含むレジスト組成物用 樹脂。  [12] The resin for a resist composition according to the resin for a resist composition according to claim 11, further comprising: a constituent unit (a4) a constituent unit derived from an acrylate ester containing norbornane lactone.
[13] 請求項 11に記載のレジスト組成物用榭脂において、構成単位 (al)の割合が 20〜 [13] The resin for a resist composition according to claim 11, wherein the proportion of the structural unit (al) is from 20 to
85モル%、構成単位(a2)の割合が 14〜70モル%、構成単位(a4)の割合が 1〜70 モル0 /0であるレジスト組成物用榭脂。 85 mol%, proportion 14-70 mole% of the structural unit (a2),榭脂resist composition ratio of 1 to 70 mol 0/0 structural unit (a4).
[14] 請求項 6に記載のレジスト組成物用榭脂において、さらにラタトン含有単環または多 環式基を含むアクリル酸エステルから誘導される構成単位 (a4)を有するレジスト組成 物用樹脂。 [14] The resin for a resist composition according to claim 6, further comprising a structural unit (a4) derived from an acrylate ester containing a rataton-containing monocyclic or polycyclic group.
[15] 請求項 14に記載のレジスト組成物用榭脂にぉ 、て、前記構成単位 (a4)が、ノルボ ルナンラタトンを含むアクリル酸エステルカゝら誘導される構成単位を含むレジスト組成 物用樹脂。  15. The resin for a resist composition according to claim 14, wherein the structural unit (a4) includes a structural unit derived from an acrylate ester containing norbornane ratatone.
[16] 請求項 14に記載のレジスト組成物用榭脂において、構成単位 (al)の割合が 10〜 85モル%、構成単位(a2)の割合が 10〜80モル%、構成単位(a3)の割合力 〜70 モル0 /0、構成単位 (a4)の割合力^〜 70モル0 /0であるレジスト組成物用榭脂。 [16] The resin for a resist composition according to claim 14, wherein the proportion of the structural unit (al) is from 10 to 85 mol%, the ratio 10 to 80 mol% of the structural unit (a2), the proportion force 70 mole 0/0 of the structural unit (a3), is in a proportion force ^ to 70 mole 0/0 of the structural unit (a4) Resins for resist compositions.
[17] 請求項 11に記載のレジスト組成物用榭脂にぉ 、て、構成単位 (a4)は、 oc位に水 素原子が結合している構成単位であるレジスト組成物用榭脂。 [17] The resin for a resist composition according to claim 11, wherein the structural unit (a4) is a structural unit having a hydrogen atom bonded to the oc position.
[18] 請求項 14に記載のレジスト組成物用榭脂において、構成単位 (a4)は、 α位に水 素原子が結合している構成単位であるレジスト組成物用榭脂。 [18] The resin for a resist composition according to claim 14, wherein the structural unit (a4) is a structural unit having a hydrogen atom bonded to the α- position.
[19] 請求項 2に記載のレジスト組成物用榭脂において、一般式(1)中の Rが水素原子 であるレジスト組成物用榭脂。 [19] The resin for a resist composition according to claim 2, wherein R in the general formula (1) is a hydrogen atom.
[20] 請求項 1に記載のレジスト組成物用榭脂にぉ 、て、 [20] The resin for a resist composition according to claim 1, wherein
構成単位 (a2)は、 oc位に水素原子が結合して ヽる構成単位であるレジスト組成物 用樹脂。  The structural unit (a2) is a resin for a resist composition, which is a structural unit formed by bonding a hydrogen atom to the oc position.
[21] 請求項 1に記載のレジスト組成物用榭脂において、質量平均分子量が 2000〜30 [21] The resin for a resist composition according to claim 1, wherein the weight average molecular weight is from 2000 to 30.
000の範囲であるレジスト組成物用榭脂。 A resin for a resist composition in the range of 000.
[22] (A)請求項 1に記載のレジスト組成物用榭脂、 (B)露光により酸を発生する酸発生 剤成分、および (C)架橋剤成分を含有することを特徴とするネガ型レジスト組成物。 [22] A negative type comprising (A) the resin for a resist composition according to claim 1, (B) an acid generator component that generates an acid upon exposure, and (C) a crosslinking agent component. Resist composition.
[23] 請求項 22に記載のネガ型レジスト組成物において、(B)成分力 フッ素化アルキル スルホン酸イオンをァ-オンとするォ-ゥム塩であるネガ型レジスト組成物。 23. The negative resist composition according to claim 22, wherein the component (B) is a potassium salt having a fluorinated alkyl sulfonate ion as an ion.
[24] 請求項 22に記載のネガ型レジスト組成物にぉ 、て、 (C)成分が、メラミン系架橋剤[24] The negative resist composition according to claim 22, wherein the component (C) is a melamine-based crosslinking agent.
、尿素系架橋剤、エチレン尿素系架橋剤、及びグリコールゥリル系架橋剤から選ばれ る少なくとも 1種であるネガ型レジスト組成物。 A negative resist composition which is at least one selected from a urea-based crosslinking agent, an ethylene-urea-based crosslinking agent, and a glycol-peryl-based crosslinking agent.
[25] 請求項 22に記載のネガ型レジスト組成物において、さらに含窒素有機化合物を含 有するネガ型レジスト組成物。 [25] The negative resist composition according to claim 22, further comprising a nitrogen-containing organic compound.
[26] 請求項 22に記載のネガ型レジスト組成物において、露光光源として ArFエキシマ レーザーを用いるプロセス用であるネガ型レジスト糸且成物。 26. The negative resist composition according to claim 22, which is for a process using an ArF excimer laser as an exposure light source.
[27] 請求項 22〜26の ヽずれか一項に記載のネガ型レジスト組成物を基板上に塗布し[27] The negative resist composition according to any one of claims 22 to 26 is applied on a substrate.
、プリベータし、選択的に露光した後、 PEB (露光後加熱)を施し、アルカリ現像して レジストパターンを形成することを特徴とするレジストパターン形成方法。 A pre-beta, selectively exposing, subjecting to PEB (post-exposure baking), and alkali developing to form a resist pattern.
PCT/JP2005/007391 2004-04-27 2005-04-18 Resin for resist composition, negative resist composition and method for forming resist pattern WO2005105873A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004-131115 2004-04-27
JP2004131115 2004-04-27
JP2004263753A JP2005336452A (en) 2004-04-27 2004-09-10 Resin for resist composition, negative type resist composition and method for forming resist pattern
JP2004-263753 2004-09-10

Publications (1)

Publication Number Publication Date
WO2005105873A1 true WO2005105873A1 (en) 2005-11-10

Family

ID=35241639

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2005/007391 WO2005105873A1 (en) 2004-04-27 2005-04-18 Resin for resist composition, negative resist composition and method for forming resist pattern

Country Status (3)

Country Link
JP (1) JP2005336452A (en)
TW (1) TW200609249A (en)
WO (1) WO2005105873A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2085822A1 (en) * 2006-10-12 2009-08-05 Nissan Chemical Industries, Limited Process for semiconductor device production using under-resist film cured by photocrosslinking

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8404427B2 (en) 2005-12-28 2013-03-26 Fujifilm Corporation Photosensitive composition, and pattern-forming method and resist film using the photosensitive composition
JP4866605B2 (en) * 2005-12-28 2012-02-01 富士フイルム株式会社 Photosensitive composition, pattern forming method using the photosensitive composition, and compound used in the photosensitive composition
US7655378B2 (en) * 2006-07-24 2010-02-02 Shin-Etsu Chemical Co., Ltd. Negative resist composition and patterning process using the same
KR100991312B1 (en) * 2007-08-30 2010-11-01 샌트랄 글래스 컴퍼니 리미티드 Positive resist composition
JP5007827B2 (en) 2008-04-04 2012-08-22 信越化学工業株式会社 Double pattern formation method
JP5268588B2 (en) 2008-07-18 2013-08-21 東京応化工業株式会社 Resist composition, resist pattern forming method, novel compound and acid generator
JP5548406B2 (en) 2008-08-22 2014-07-16 東京応化工業株式会社 Positive resist composition, resist pattern forming method, polymer compound
JP4671065B2 (en) 2008-09-05 2011-04-13 信越化学工業株式会社 Double pattern formation method
US8338076B2 (en) 2008-11-28 2012-12-25 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, novel compound, and acid generator
JP5398246B2 (en) 2008-12-10 2014-01-29 東京応化工業株式会社 Resist composition and resist pattern forming method
JP5232663B2 (en) 2009-01-14 2013-07-10 東京応化工業株式会社 Resist composition, resist pattern forming method, polymer compound and compound
JP5264575B2 (en) 2009-03-11 2013-08-14 東京応化工業株式会社 Positive resist composition and resist pattern forming method
JP5544212B2 (en) 2009-04-27 2014-07-09 東京応化工業株式会社 Resist composition, resist pattern forming method, compound and method for producing the same, acid generator
JP5452102B2 (en) 2009-07-02 2014-03-26 東京応化工業株式会社 Resist composition and resist pattern forming method
JP5401218B2 (en) 2009-09-03 2014-01-29 東京応化工業株式会社 Resist composition and resist pattern forming method
JP5439124B2 (en) 2009-11-11 2014-03-12 東京応化工業株式会社 Resist composition and resist pattern forming method
JP5548494B2 (en) 2010-03-19 2014-07-16 東京応化工業株式会社 Surface modifying material, resist pattern forming method, and pattern forming method
JP5542500B2 (en) 2010-03-30 2014-07-09 東京応化工業株式会社 Resist pattern forming method and resist composition
US8932795B2 (en) 2010-05-19 2015-01-13 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, novel compound, and acid generator
JP5622448B2 (en) 2010-06-15 2014-11-12 東京応化工業株式会社 Resist composition, resist pattern formation method, polymer compound, compound
JP5557657B2 (en) 2010-09-02 2014-07-23 東京応化工業株式会社 Resist composition, resist pattern forming method, novel compound and acid generator
JP5564402B2 (en) 2010-10-29 2014-07-30 東京応化工業株式会社 Resist composition, resist pattern forming method, novel compound, acid generator
JP5658546B2 (en) 2010-11-30 2015-01-28 東京応化工業株式会社 Resist composition, resist pattern forming method, polymer compound
JP5749480B2 (en) 2010-12-08 2015-07-15 東京応化工業株式会社 New compounds
JP5802385B2 (en) 2010-12-08 2015-10-28 東京応化工業株式会社 Resist composition and resist pattern forming method
JP5781755B2 (en) 2010-12-08 2015-09-24 東京応化工業株式会社 Resist composition and resist pattern forming method
JP5690584B2 (en) 2010-12-28 2015-03-25 東京応化工業株式会社 Resist composition and resist pattern forming method
JP5856809B2 (en) 2011-01-26 2016-02-10 東京応化工業株式会社 Resist composition and resist pattern forming method
JP5677127B2 (en) 2011-02-18 2015-02-25 東京応化工業株式会社 Resist composition and resist pattern forming method
JP5677135B2 (en) 2011-02-23 2015-02-25 東京応化工業株式会社 Resist composition, resist pattern forming method, and polymer compound
JP5723648B2 (en) 2011-03-25 2015-05-27 東京応化工業株式会社 Resist composition and resist pattern forming method
JP5732306B2 (en) 2011-04-20 2015-06-10 東京応化工業株式会社 Compound, polymer compound, acid generator, resist composition, resist pattern forming method
JP5758197B2 (en) 2011-05-25 2015-08-05 東京応化工業株式会社 Resist composition, resist pattern forming method, novel compound, acid generator
TWI614230B (en) 2011-06-17 2018-02-11 東京應化工業股份有限公司 Compound, radical polymerization initiator, method of producing compound, polymer, resist composition, method of forming resist pattern
US9057948B2 (en) 2011-10-17 2015-06-16 Tokyo Ohka Kogyo Co., Ltd. Resist composition for EUV or EB, and method of forming resist pattern
JP2013097272A (en) 2011-11-02 2013-05-20 Tokyo Ohka Kogyo Co Ltd Resist composition and method for forming resist pattern
JP5856441B2 (en) 2011-11-09 2016-02-09 東京応化工業株式会社 Resist composition, resist pattern forming method, and polymer compound
JP6002378B2 (en) 2011-11-24 2016-10-05 東京応化工業株式会社 Method for producing polymer compound
JP5764480B2 (en) 2011-11-25 2015-08-19 東京応化工業株式会社 Resist composition, resist pattern forming method, and polymer compound
JP5846889B2 (en) 2011-12-14 2016-01-20 東京応化工業株式会社 Resist composition, resist pattern forming method, compound
JP5846888B2 (en) 2011-12-14 2016-01-20 東京応化工業株式会社 Resist composition and resist pattern forming method
JP2013142811A (en) 2012-01-11 2013-07-22 Tokyo Ohka Kogyo Co Ltd Resist composition, method for forming resist pattern and novel compound
JP2013171085A (en) 2012-02-17 2013-09-02 Tokyo Ohka Kogyo Co Ltd Resist composition and method of forming resist pattern
JP5978137B2 (en) 2012-02-23 2016-08-24 東京応化工業株式会社 Resist composition and resist pattern forming method
JP5919148B2 (en) 2012-03-28 2016-05-18 東京応化工業株式会社 Resist composition, resist pattern forming method, and polymer compound
JP6002430B2 (en) 2012-05-08 2016-10-05 東京応化工業株式会社 Resist composition, resist pattern forming method, compound
JP6059517B2 (en) 2012-05-16 2017-01-11 東京応化工業株式会社 Resist composition and resist pattern forming method
JP6130109B2 (en) 2012-05-30 2017-05-17 東京応化工業株式会社 Resist composition, resist pattern forming method, compound
JP6118533B2 (en) 2012-06-13 2017-04-19 東京応化工業株式会社 Compound, resist composition, resist pattern forming method.
JP6006999B2 (en) 2012-06-20 2016-10-12 東京応化工業株式会社 Resist composition and resist pattern forming method
JP6037689B2 (en) 2012-07-10 2016-12-07 東京応化工業株式会社 Method for producing ammonium salt compound and method for producing acid generator
JP6093614B2 (en) 2013-03-25 2017-03-08 東京応化工業株式会社 Resist composition and resist pattern forming method
JP6097610B2 (en) 2013-03-25 2017-03-15 東京応化工業株式会社 Resist composition and resist pattern forming method
JP6097611B2 (en) 2013-03-25 2017-03-15 東京応化工業株式会社 Resist composition and resist pattern forming method
JP6249664B2 (en) 2013-07-31 2017-12-20 東京応化工業株式会社 Resist composition, acid generator, and resist pattern forming method
JP6307250B2 (en) 2013-11-15 2018-04-04 東京応化工業株式会社 Resist composition, resist pattern formation method, polymer compound, compound
JP6322424B2 (en) 2014-01-16 2018-05-09 東京応化工業株式会社 Resist composition, resist pattern forming method, and polymer compound
JP6397696B2 (en) 2014-08-26 2018-09-26 東京応化工業株式会社 Resist composition and resist pattern forming method
JP6706530B2 (en) 2016-03-31 2020-06-10 東京応化工業株式会社 Resist composition and method for forming resist pattern
TW202106373A (en) 2019-05-22 2021-02-16 日商東京應化工業股份有限公司 Production method for resist composition purified product, resist pattern-forming method, and resist composition purified product
JP7394591B2 (en) 2019-11-14 2023-12-08 東京応化工業株式会社 Resist composition and resist pattern forming method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62164045A (en) * 1986-01-13 1987-07-20 ロ−ム アンド ハ−ス コンパニ− Negative photoresist composition and formation of image
JP2000206694A (en) * 1998-11-10 2000-07-28 Tokyo Ohka Kogyo Co Ltd Negative resist composition
JP2005043852A (en) * 2002-10-29 2005-02-17 Jsr Corp Radiation-sensitive resin composition
JP2005070316A (en) * 2003-08-22 2005-03-17 Fuji Photo Film Co Ltd Positive resist composition and pattern making method using same
JP2005084239A (en) * 2003-09-05 2005-03-31 Fuji Photo Film Co Ltd Positive resist composition and method for forming pattern by using the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62164045A (en) * 1986-01-13 1987-07-20 ロ−ム アンド ハ−ス コンパニ− Negative photoresist composition and formation of image
JP2000206694A (en) * 1998-11-10 2000-07-28 Tokyo Ohka Kogyo Co Ltd Negative resist composition
JP2005043852A (en) * 2002-10-29 2005-02-17 Jsr Corp Radiation-sensitive resin composition
JP2005070316A (en) * 2003-08-22 2005-03-17 Fuji Photo Film Co Ltd Positive resist composition and pattern making method using same
JP2005084239A (en) * 2003-09-05 2005-03-31 Fuji Photo Film Co Ltd Positive resist composition and method for forming pattern by using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2085822A1 (en) * 2006-10-12 2009-08-05 Nissan Chemical Industries, Limited Process for semiconductor device production using under-resist film cured by photocrosslinking
EP2085822A4 (en) * 2006-10-12 2011-03-16 Nissan Chemical Ind Ltd Process for semiconductor device production using under-resist film cured by photocrosslinking

Also Published As

Publication number Publication date
TW200609249A (en) 2006-03-16
JP2005336452A (en) 2005-12-08

Similar Documents

Publication Publication Date Title
WO2005105873A1 (en) Resin for resist composition, negative resist composition and method for forming resist pattern
JP4566820B2 (en) Negative resist composition and resist pattern forming method
JP4205061B2 (en) Negative resist composition and resist pattern forming method
JP4828204B2 (en) Positive resist composition, resist pattern forming method, and polymer compound
US20090305163A1 (en) Negative resist composition
KR20090031956A (en) Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern
WO2006115010A1 (en) Negative resist composition and method for forming resist pattern
WO2008012999A1 (en) Positive resist composition and method of forming resist pattern
EP1791024A1 (en) Electron-beam or euv (extreme ultraviolet) resist composition and process for the formation of resist patterns
WO2006064622A1 (en) Positive-working resist composition and method for resist pattern formation
JP4668042B2 (en) Positive resist composition and resist pattern forming method
JP2006215067A (en) Negative resist composition and resist pattern forming method
JP2007084502A (en) Compound, negative type resist composition and method for forming resist pattern
JP4889950B2 (en) Positive resist composition for electron beam or EUV and resist pattern forming method
KR100902535B1 (en) Positive resist composition and method of forming resist pattern
WO2007148492A1 (en) Positive resist composition and method of forming resist pattern
KR100676110B1 (en) Positive resist composition and resist pattern formation method
JP4767596B2 (en) Negative resist composition and resist pattern forming method
JP2004175981A (en) Method for producing resin, resin, resist composition and method for forming resist pattern
US7820360B2 (en) Polymer compound, negative resist composition, and method of forming resist pattern
JP4633655B2 (en) Positive resist composition and resist pattern forming method
JP4657883B2 (en) Resist pattern forming method
US7858286B2 (en) Positive resist composition and method for forming resist pattern
JP2008107677A (en) Negative resist composition and method for forming resist pattern
JP2006018016A (en) Positive resist composition and resist pattern forming method

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

122 Ep: pct application non-entry in european phase