WO2005091076A3 - Procedes de fabrication d'elements optiques reflecteurs, elements optiques reflecteurs, appareil de lithogravure aux uv extremes et procedes de mise en oeuvre d'elements optiques et d'appareils de lithogravure aux uv extremes, procedes pour determiner le dephasage, procedes pour determiner l'epaisseur de couche, et appareil - Google Patents
Procedes de fabrication d'elements optiques reflecteurs, elements optiques reflecteurs, appareil de lithogravure aux uv extremes et procedes de mise en oeuvre d'elements optiques et d'appareils de lithogravure aux uv extremes, procedes pour determiner le dephasage, procedes pour determiner l'epaisseur de couche, et appareil Download PDFInfo
- Publication number
- WO2005091076A3 WO2005091076A3 PCT/EP2005/050985 EP2005050985W WO2005091076A3 WO 2005091076 A3 WO2005091076 A3 WO 2005091076A3 EP 2005050985 W EP2005050985 W EP 2005050985W WO 2005091076 A3 WO2005091076 A3 WO 2005091076A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- methods
- cap layer
- coating
- optical elements
- reflective optical
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/598,481 US20070285643A1 (en) | 2004-03-05 | 2005-03-04 | Method For Manufacturing Reflective Optical Element, Reflective Optical Elements, Euv-Lithography Apparatus And Methods For Operating Optical Elements And Euv-Lithography Apparatus, Methods For Determining The Phase Shift, Methods For Determining The Layer Thickness, And Apparatuses For Carrying Out The Methods |
EP05729571A EP1730597A2 (fr) | 2004-03-05 | 2005-03-04 | Procedes de fabrication d'elements optiques reflecteurs, elements optiques reflecteurs, appareil de lithogravure aux uv extremes et procedes de mise en oeuvre d'elements optiques et d'appareils de lithogravure aux uv extremes, procedes pour determiner le dephasage, procedes pour determiner l'epaisse |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55030204P | 2004-03-05 | 2004-03-05 | |
US60/550,302 | 2004-03-05 | ||
DE102004011355 | 2004-03-05 | ||
DE102004011356.4 | 2004-03-05 | ||
DE102004011355.6 | 2004-03-05 | ||
DE102004011356 | 2004-03-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005091076A2 WO2005091076A2 (fr) | 2005-09-29 |
WO2005091076A3 true WO2005091076A3 (fr) | 2007-01-18 |
Family
ID=34962761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2005/050985 WO2005091076A2 (fr) | 2004-03-05 | 2005-03-04 | Procedes de fabrication d'elements optiques reflecteurs, elements optiques reflecteurs, appareil de lithogravure aux uv extremes et procedes de mise en oeuvre d'elements optiques et d'appareils de lithogravure aux uv extremes, procedes pour determiner le dephasage, procedes pour determiner l'epaisseur de couche, et appareil |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP1730597A2 (fr) |
WO (1) | WO2005091076A2 (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007067344A (ja) * | 2005-09-02 | 2007-03-15 | Canon Inc | 露光装置および方法ならびにデバイス製造方法 |
DE102006029799A1 (de) * | 2006-06-27 | 2008-01-03 | Carl Zeiss Smt Ag | Reflektives optisches Element und Verfahren zu seiner Charakterisierung |
DE102006044591A1 (de) | 2006-09-19 | 2008-04-03 | Carl Zeiss Smt Ag | Optische Anordnung, insbesondere Projektionsbelichtungsanlage für die EUV-Lithographie, sowie reflektives optisches Element mit verminderter Kontamination |
US7629594B2 (en) * | 2006-10-10 | 2009-12-08 | Asml Netherlands B.V. | Lithographic apparatus, and device manufacturing method |
US20080151201A1 (en) * | 2006-12-22 | 2008-06-26 | Asml Netherlands B.V. | Lithographic apparatus and method |
DE102007037942A1 (de) | 2007-08-11 | 2009-02-19 | Carl Zeiss Smt Ag | Optische Anordnung, Projektionsbelichtungsanlage und Verfahren zum Bestimmen der Dicke einer Kontaminationsschicht |
US7960701B2 (en) | 2007-12-20 | 2011-06-14 | Cymer, Inc. | EUV light source components and methods for producing, using and refurbishing same |
US7641349B1 (en) | 2008-09-22 | 2010-01-05 | Cymer, Inc. | Systems and methods for collector mirror temperature control using direct contact heat transfer |
DE102013201193A1 (de) | 2013-01-25 | 2014-07-31 | Carl Zeiss Smt Gmbh | Verfahren zum Bestimmen der Phasenlage und/oder der Dicke einer Kontaminationsschicht an einem optischen Element und EUV-Lithographievorrichtung |
DE102016206088A1 (de) | 2016-04-12 | 2017-05-24 | Carl Zeiss Smt Gmbh | Verfahren zum Bestimmen der Dicke einer kontaminierenden Schicht und/oder der Art eines kontaminierenden Materials, optisches Element und EUV-Lithographiesystem |
US10747119B2 (en) * | 2018-09-28 | 2020-08-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for monitoring reflectivity of the collector for extreme ultraviolet radiation source |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5307395A (en) * | 1992-09-30 | 1994-04-26 | The United States Of America As Represented By The Secretary Of The Navy | Low-damage multilayer mirror for the soft X-ray region |
JP2002243669A (ja) * | 2001-02-15 | 2002-08-28 | Ntt Advanced Technology Corp | 多層膜の評価方法および装置 |
EP1243970A1 (fr) * | 2001-03-22 | 2002-09-25 | ASML Netherlands B.V. | Appareil lithographique |
EP1351258A1 (fr) * | 2002-03-04 | 2003-10-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Système optique comprenant une source de rayonnement ultraviolet extrême et un élément réflectif |
-
2005
- 2005-03-04 EP EP05729571A patent/EP1730597A2/fr not_active Withdrawn
- 2005-03-04 WO PCT/EP2005/050985 patent/WO2005091076A2/fr not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5307395A (en) * | 1992-09-30 | 1994-04-26 | The United States Of America As Represented By The Secretary Of The Navy | Low-damage multilayer mirror for the soft X-ray region |
JP2002243669A (ja) * | 2001-02-15 | 2002-08-28 | Ntt Advanced Technology Corp | 多層膜の評価方法および装置 |
EP1243970A1 (fr) * | 2001-03-22 | 2002-09-25 | ASML Netherlands B.V. | Appareil lithographique |
EP1351258A1 (fr) * | 2002-03-04 | 2003-10-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Système optique comprenant une source de rayonnement ultraviolet extrême et un élément réflectif |
Non-Patent Citations (2)
Title |
---|
MURAMATSU Y ET AL: "Total-electron-yield X-ray standing-wave measurements of multilayer X-ray mirrors for the interface structure evaluation", MICROPROCESSES AND NANOTECHNOLOGY CONFERENCE, 2001 INTERNATIONAL OCT. 31 - NOV. 2, 2001, PISCATAWAY, NJ, USA,IEEE, 31 October 2001 (2001-10-31), pages 66 - 66, XP010577373, ISBN: 4-89114-017-8 * |
PATENT ABSTRACTS OF JAPAN vol. 2002, no. 12 12 December 2002 (2002-12-12) * |
Also Published As
Publication number | Publication date |
---|---|
EP1730597A2 (fr) | 2006-12-13 |
WO2005091076A2 (fr) | 2005-09-29 |
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