WO2005084092A3 - Micrometric direct-write methods for patterning conductive material and applications to flat panel display repair - Google Patents

Micrometric direct-write methods for patterning conductive material and applications to flat panel display repair Download PDF

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Publication number
WO2005084092A3
WO2005084092A3 PCT/US2005/006009 US2005006009W WO2005084092A3 WO 2005084092 A3 WO2005084092 A3 WO 2005084092A3 US 2005006009 W US2005006009 W US 2005006009W WO 2005084092 A3 WO2005084092 A3 WO 2005084092A3
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WO
WIPO (PCT)
Prior art keywords
traces
micron
nanoparticles
low
features
Prior art date
Application number
PCT/US2005/006009
Other languages
French (fr)
Other versions
WO2005084092A2 (en
Inventor
Nabil Amro
Linette Demers
Sandeep Disawal
Hua Zhang
Robert Elghanian
Sylvain Cruchon-Dupeyrat
John Bussan
Original Assignee
Nanoink Inc
Nabil Amro
Linette Demers
Sandeep Disawal
Hua Zhang
Robert Elghanian
Sylvain Cruchon-Dupeyrat
John Bussan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanoink Inc, Nabil Amro, Linette Demers, Sandeep Disawal, Hua Zhang, Robert Elghanian, Sylvain Cruchon-Dupeyrat, John Bussan filed Critical Nanoink Inc
Priority to EP05723747A priority Critical patent/EP1726193A2/en
Priority to JP2007500990A priority patent/JP2007528796A/en
Priority to KR1020067019567A priority patent/KR101165484B1/en
Priority to CA2557472A priority patent/CA2557472C/en
Publication of WO2005084092A2 publication Critical patent/WO2005084092A2/en
Publication of WO2005084092A3 publication Critical patent/WO2005084092A3/en

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Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00Inks
    • C09D11/02Printing inks
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00Inks
    • C09D11/30Inkjet printing inks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/08Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • C23C18/1607Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/161Process or apparatus coating on selected surface areas by direct patterning from plating step, e.g. inkjet
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1241Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01Tools for processing; Objects used during processing
    • H05K2203/0195Tool for a process not provided for in H05K3/00, e.g. tool for handling objects using suction, for deforming objects, for applying local pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nonlinear Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Wood Science & Technology (AREA)
  • Thermal Sciences (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

A new, low temperature method for directly writing conductive metal traces with micron and sub-micron sized features. In this method, a flat beam is used, such as an AFM cantilever, with or without a tip, to draw traces of metal precursor ink onto a substrate. The dimensions of the metal traces can be directly controlled by the geometry of the cantilever, so that one can controllably deposit traces from 1 micron to over 100 microns wide with microfabricated cantilevers. Cantilevers with sharp tips can be used to further shrink the minimum features sizes to sub-micron scale. The height of the features can be increased by building layers of similar or different material. To obtain highly conductive and robust patterns with this deposition method, two general ink formulation strategies were designed. The key component of both ink systems is nanoparticles with diameters less than 100 nm. Because nanoparticles typically have significantly lower melting points than the bulk material, one can fuse, sinter, or coalesce collections of discrete particles into continuous (poly)crystalline films at very low temperatures (less than about 300 °C, and as low as about 120 °C). In the first strategy, one can disperse hydrocarbon-capped nanoparticles in a suitable solvent, deposit them on a surface in the form of a pattern, and then anneal the film by heating to form continuous metallic patterns. In the second strategy, one can deliver metal compounds to the surface in the presence of a reducing matrix and then form nanoparticles in situ by heating that subsequently coalesce to form continuous metallic patterns. In studies with platinum and gold inks, both nanoparticle-based methods yield micron sized traces on glass and oxidized silicon that have low resistivity (4 microohm.cm), and excellent adhesion properties.
PCT/US2005/006009 2004-02-25 2005-02-25 Micrometric direct-write methods for patterning conductive material and applications to flat panel display repair WO2005084092A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP05723747A EP1726193A2 (en) 2004-02-25 2005-02-25 Micrometric direct-write methods for patterning conductive material and applications to flat panel display repair
JP2007500990A JP2007528796A (en) 2004-02-25 2005-02-25 Micrometer direct writing method for patterning conductors and application to flat panel display repair
KR1020067019567A KR101165484B1 (en) 2004-02-25 2005-02-25 A method of delivering ink to a substrate surface, a method of writing conductive metal, an ink formulation for nanolithography or microlithography, a method for depositing metallic traces, a method and device for repair of a flat panel display substrate
CA2557472A CA2557472C (en) 2004-02-25 2005-02-25 Micrometric direct-write methods for patterning conductive material and applications to flat panel display repair

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54709104P 2004-02-25 2004-02-25
US60/547,091 2004-02-25

Publications (2)

Publication Number Publication Date
WO2005084092A2 WO2005084092A2 (en) 2005-09-09
WO2005084092A3 true WO2005084092A3 (en) 2005-11-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/006009 WO2005084092A2 (en) 2004-02-25 2005-02-25 Micrometric direct-write methods for patterning conductive material and applications to flat panel display repair

Country Status (7)

Country Link
EP (1) EP1726193A2 (en)
JP (1) JP2007528796A (en)
KR (1) KR101165484B1 (en)
CN (1) CN101002513A (en)
CA (1) CA2557472C (en)
TW (1) TW200604692A (en)
WO (1) WO2005084092A2 (en)

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JP2011502183A (en) * 2007-10-15 2011-01-20 ナノインク インコーポレーティッド Lithography of nanoparticle-based inks
US8048488B2 (en) * 2008-01-14 2011-11-01 Xerox Corporation Methods for removing a stabilizer from a metal nanoparticle using a destabilizer
US8256018B2 (en) * 2008-02-05 2012-08-28 Nanoink, Inc. Array and cantilever array leveling
CN101519184B (en) * 2008-02-29 2012-05-23 财团法人工业技术研究院 Method for manufacturing application substrate through photo-thermal effect
JP5168100B2 (en) * 2008-11-17 2013-03-21 大日本印刷株式会社 Defect correction method for photomasks
JP2012521493A (en) * 2009-03-24 2012-09-13 イッサム リサーチ ディべロップメント カンパニー オブ ザ ヘブライ ユニバーシティー オブ エルサレム,リミテッド Nanoparticle sintering process at low temperature
US20100288543A1 (en) * 2009-04-14 2010-11-18 Nanoink, Inc. Conducting lines, nanoparticles, inks, and patterning
JP2013524258A (en) * 2010-04-14 2013-06-17 ナノインク インコーポレーティッド Cantilever for adhesion
KR101345337B1 (en) 2011-06-13 2013-12-30 한국생명공학연구원 Preparation apparatus and method of nanopositioning for one-tip multicomponent nano-inking system in the dip-pen nanolithography
US20140010952A1 (en) * 2012-01-02 2014-01-09 Noam ROSENSTEIN Pcb repair of defective interconnects by deposition of conductive ink
US10029916B2 (en) 2012-06-22 2018-07-24 C3Nano Inc. Metal nanowire networks and transparent conductive material
US9920207B2 (en) 2012-06-22 2018-03-20 C3Nano Inc. Metal nanostructured networks and transparent conductive material
JP2014107484A (en) * 2012-11-29 2014-06-09 Jsr Corp Connection method and conductive ink
CN104812501B (en) * 2012-12-06 2018-07-17 3M创新有限公司 The fine layers of viscous liquid and the purposes in forming laminates
US10020807B2 (en) * 2013-02-26 2018-07-10 C3Nano Inc. Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks
CN104178721B (en) * 2013-05-22 2016-08-10 中国科学院理化技术研究所 Device and method for directly manufacturing conductive film at room temperature
KR20160060135A (en) * 2013-09-24 2016-05-27 헤레우스 도이칠란트 게엠베하 운트 코. 카게 Process for producing a shiny laminate structure at low temperatures
US11274223B2 (en) 2013-11-22 2022-03-15 C3 Nano, Inc. Transparent conductive coatings based on metal nanowires and polymer binders, solution processing thereof, and patterning approaches
US11343911B1 (en) 2014-04-11 2022-05-24 C3 Nano, Inc. Formable transparent conductive films with metal nanowires
US9183968B1 (en) 2014-07-31 2015-11-10 C3Nano Inc. Metal nanowire inks for the formation of transparent conductive films with fused networks
WO2017081680A1 (en) * 2015-11-09 2017-05-18 Kornit Digital Ltd. Dye discharge reagent for inkjet compositions
CN107293591B (en) * 2016-04-11 2020-03-31 华邦电子股份有限公司 Printed circuit, thin film transistor and manufacturing method thereof
KR102256454B1 (en) * 2016-07-22 2021-06-03 주식회사 엘지화학 Secondary Battery Comprising Barcode Part Printed with Solid Ink Particles
US10345695B2 (en) * 2016-11-30 2019-07-09 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet alignment marks
CN111448075B (en) * 2017-12-11 2021-09-03 惠普发展公司,有限责任合伙企业 Fluid reservoir
CN108469707A (en) * 2018-02-27 2018-08-31 昆山国显光电有限公司 A kind of repair system and restorative procedure of display panel
US11492547B2 (en) 2020-06-04 2022-11-08 UbiQD, Inc. Low-PH nanoparticles and ligands
CN113555161A (en) * 2021-07-06 2021-10-26 中南大学 Patterning method of nanowire electrode
CN114350184B (en) * 2021-12-03 2022-07-29 南京大学 Repairing type photosensitive nano coating and preparation method and application thereof
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Also Published As

Publication number Publication date
WO2005084092A2 (en) 2005-09-09
KR101165484B1 (en) 2012-07-13
CN101002513A (en) 2007-07-18
CA2557472C (en) 2013-05-07
EP1726193A2 (en) 2006-11-29
CA2557472A1 (en) 2005-09-09
KR20070029151A (en) 2007-03-13
JP2007528796A (en) 2007-10-18
TW200604692A (en) 2006-02-01

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