WO2005078777A1 - Méthode de conduite, méthode d'exposition, dispositif d'exposition, et méthode de fabrication du dispositif - Google Patents

Méthode de conduite, méthode d'exposition, dispositif d'exposition, et méthode de fabrication du dispositif Download PDF

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Publication number
WO2005078777A1
WO2005078777A1 PCT/JP2005/002216 JP2005002216W WO2005078777A1 WO 2005078777 A1 WO2005078777 A1 WO 2005078777A1 JP 2005002216 W JP2005002216 W JP 2005002216W WO 2005078777 A1 WO2005078777 A1 WO 2005078777A1
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WIPO (PCT)
Prior art keywords
stage
movement information
wafer
moving body
information
Prior art date
Application number
PCT/JP2005/002216
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English (en)
Japanese (ja)
Inventor
Takeyuki Mizutani
Original Assignee
Nikon Corporation
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Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2005518009A priority Critical patent/JP4479911B2/ja
Publication of WO2005078777A1 publication Critical patent/WO2005078777A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control

Definitions

  • the present invention relates to a driving method, an exposure method, an exposure apparatus, and a device manufacturing method. More specifically, the present invention relates to a driving method for driving a moving body in contact with a liquid, and a stage using the driving method. The present invention relates to an exposure method and an exposure apparatus for irradiating an object on a stage with exposure light via a liquid by driving a liquid crystal device, and a device manufacturing method including a lithographic process using the exposure method and the exposure apparatus.
  • a pattern to be formed is determined.
  • a reticle (or photomask, etc.) pattern formed as a mask formed in proportion to a magnification of about 1 to 5 times is exposed to a wafer (or glass plate) as an object to be exposed using a batch exposure or scanning exposure type projection exposure apparatus. ) Is used.
  • the resolving power (resolution) of a projection exposure apparatus is proportional to the exposure wavelength (wavelength of exposure light) and inversely proportional to the numerical aperture (NA) of the projection optical system.
  • NA numerical aperture
  • the space between the wafer and the optical member installed on the most image side (wafer side) of the projection optical system (projection lens) has a higher refractive index than air.
  • the immersion lithography method that fills with a liquid (for example, pure water) is receiving attention, and immersion lithography equipment is being actively developed. According to the immersion lithography method, it is the power that can substantially shorten the exposure wavelength and increase (widen) the depth of focus compared to air.
  • the immersion exposure method uses exposure light used in a conventional exposure apparatus, for example, i-line having a wavelength of 365 nm, KrF excimer laser light having a wavelength of 248 nm, or ArF excimer laser having a wavelength of 193 nm.
  • exposure light used in a conventional exposure apparatus, for example, i-line having a wavelength of 365 nm, KrF excimer laser light having a wavelength of 248 nm, or ArF excimer laser having a wavelength of 193 nm.
  • a wafer immersion type in which a wafer is placed in a bath and the bath is filled with liquid for example, see Patent Document 2
  • the projection optical system and the wafer are separated from each other.
  • at least the wafer-side end of the projection optical system and the wafer come into contact with each other via water, and a frictional force is generated between the projection optical system and the liquid and between the liquid and the wafer.
  • Due to these frictional forces the position control accuracy of the wafer (the wafer stage on which the wafer is mounted) with respect to the projection optical system may be reduced, and the transfer accuracy of the fine pattern transferred onto the wafer may be reduced.
  • the magnitude of the frictional force between the projection optical system and the liquid and between the liquid and the wafer depends on the pressure of the liquid and the surface tension of the liquid.
  • the pressure of a liquid is determined by the flow rate and flow rate of the liquid.
  • the moving speed of the wafer stage determines the flow rate of the water, and thus the pressure of the water.
  • the surface tension of a liquid varies depending on the type and temperature of the liquid, and has a predetermined relationship with the contact angle of the liquid with a substance with which the liquid is in contact. Therefore, the surface condition of the substance in contact with the liquid, the type of resist applied to the wafer, The surface tension of the liquid, and hence the frictional force between the projection optical system and the liquid and between the liquid and the wafer, also depend on the type of the coating layer applied on the strike.
  • Patent Document 1 International Publication No. 99Z49504 pamphlet
  • Patent Document 2 JP-A-10-303114
  • Patent Document 3 JP-A-6-124873
  • the present invention has been made under the above circumstances, and from a first viewpoint, is a driving method for driving a moving body, wherein a liquid immersion area is formed on the moving body, A first acquisition step of acquiring first movement information of the moving body when the moving body is moved so that a predetermined target operation is performed in the first state; and a liquid immersion on the moving body. A second acquisition step of acquiring second movement information of the moving body when the moving body is moved so that the predetermined target operation is performed in a second state in which an area is formed; and A control step of controlling the movement of the moving body based on the first movement information and the second movement information.
  • the "movement information” is information of a physical quantity that changes in accordance with the movement of the moving body, for example, information of a moving trajectory (position change) of the moving body, information of a speed change, and information of an acceleration change.
  • Information at least one of jerk change information.
  • the moving body is moved so that the same target operation is performed both when acquiring the first movement information and when acquiring the second movement information.
  • Second movement information and The difference between the first state and the second state is the difference between the moving state when the liquid immersion area is formed on the moving body and the moving state when the liquid immersion area is formed on the moving body. This is the information that reflects the difference from the moving state in the event that the Therefore, by controlling the movement of the moving body based on the first movement information and the second movement information, the moving body is controlled so that an error due to the presence or absence of the liquid immersion area on the moving body does not occur. It is possible to do. That is, the position controllability of the moving body can be improved.
  • the control step based on the first movement information and the second movement information, the movement state of the moving body in the second state is corrected based on the first movement information acquired in the first state.
  • the moving body may be controlled such that the moving state of the moving body in the first state is corrected based on the second movement information acquired in the second state. You may go.
  • a driving method for driving a moving body wherein a predetermined target operation is performed in a first state where a liquid immersion area is not formed on the first moving body.
  • the first mobile unit and the second mobile unit are configured so that the same target operation is performed when the first mobile information is obtained and when the second mobile information is obtained.
  • the difference between the first movement information and the second movement information is the difference between the first state and the second state, that is, the liquid immersion area on the first movement body.
  • the information directly reflects the difference between the moving state when the liquid immersion area is not formed and the moving state when the liquid immersion area is formed on the second moving body. Therefore, by controlling the movement of at least one of the first moving body and the second moving body based on the first moving information and the second moving information, it is possible to determine whether or not the liquid immersion area exists as described above. It is possible to control at least one of the first moving body and the second moving body so that no error occurs. That is, at least one of the first moving body and the second moving body Can be improved.
  • the stage in the first state, in which the liquid immersion area is not formed on the stage, the stage is moved so that a predetermined target operation is performed.
  • the same target operation is performed both when acquiring the first movement information in the first acquisition step and when acquiring the second movement information in the second acquisition step.
  • the difference between the first movement information and the second movement information is the difference between the first state and the second state, that is, the movement state when the liquid immersion area is not formed on the stage.
  • the information directly reflects the difference between the movement state when the liquid immersion area is formed on the stage. Therefore, in the exposure step, by controlling the movement of the stage based on the first movement information and the second movement information, the stage is moved so that an error due to the presence or absence of the liquid immersion area on the stage does not occur. It becomes possible to control. Therefore, it becomes possible to form a pattern by irradiating a desired position on the object with the exposure light.
  • a fourth aspect of the present invention in a first state in which the liquid immersion area is not formed on the first stage, the first stage is moved so that a predetermined target operation is performed, A first obtaining step of obtaining first movement information of the first stage at that time; and so that the predetermined target operation is performed in the second state in which the liquid immersion area is formed on the second stage.
  • the same target operation is performed when acquiring the first movement information in the first acquisition step and when acquiring the second movement information in the second acquisition step, respectively.
  • the difference between the first movement information and the second movement information is the difference between the first state and the second state, that is, the liquid on the first stage.
  • the information directly reflects the difference between the moving state when the immersion area is formed! And the moving state when the liquid immersion area is formed on the second stage. Therefore, in the exposure step, by controlling at least one of the first stage and the second stage based on the first movement information and the second movement information, it is possible to determine whether the liquid immersion area exists.
  • an exposure apparatus for transferring a pattern formed on a mask onto an object via a projection optical system and a liquid, the mask being placed on the exposure apparatus,
  • a mask stage that is movable in at least one axial direction; a stage on which the object is placed, and that can be two-dimensionally moved within a predetermined range including a projection region of the pattern by the projection optical system;
  • a liquid immersion device for forming a liquid immersion area between the projection optical system and the stage when facing the projection optical system; a first state in which no liquid immersion area is formed on the stage;
  • a first acquisition device that moves the stage so that the target operation is performed, and acquires first movement information of the stage at that time; and a second state in which a liquid immersion area is formed on the stage.
  • a second acquisition device for moving the stage so as to acquire second movement information of the stage at that time; based on the first movement information and the second movement information, the mask stage and the second
  • a control device for controlling movement of at least one of the stage and the stage.
  • the same target operation is performed both when the first acquisition information is acquired by the first acquisition device and when the second movement information is acquired by the second acquisition device. Since the stage is moved to the next position, the difference between the first movement information and the second movement information is the difference between the first state and the second state, that is, the movement state when the liquid immersion area is not formed on the stage. Information that reflects the difference from the movement state when the liquid immersion area is formed on the stage. Become. Therefore, the control device controls the movement of the stage based on the first movement information and the second movement information, so that an error caused by the presence or absence of the liquid immersion area on the stage does not occur. Can be controlled.
  • the control device controls the movement of the mask stage or the movement between the mask stage and the stage based on the first movement information and the second movement information, so that the mask caused by the difference in the movement state is also provided. It is possible to correct the error in the positional relationship between the object and the object. Therefore, the transfer accuracy of the pattern can be improved.
  • an exposure apparatus for transferring a pattern formed on a mask onto an object via a projection optical system and a liquid, wherein the mask is mounted on the exposure apparatus.
  • a mask stage movable at least in one axis direction; a first stage on which the object is mounted, and which can move two-dimensionally independently of each other within a moving area including a projection area of the pattern by the projection optical system.
  • an immersion device for forming an immersion area between the stage and the projection optical system when one of the first and second stages faces the projection optical system; In a first state in which a liquid immersion area is formed on the first stage, the first stage is moved so that a predetermined target operation is performed, and first movement information of the first stage at that time.
  • An acquisition device for acquiring; a control device for controlling at least one movement of the mask stage, the first stage, and the second stage during the pattern transfer based on the first movement information and the second movement information. And a second exposure apparatus.
  • the first stage and the second stage are controlled so that the same target operation is performed by the acquisition device when acquiring the first movement information and when acquiring the second movement information. Since the stage and the force are moved respectively, the difference between the first movement information and the second movement information is the difference between the first state and the second state, that is, no liquid immersion area is formed on the first stage. of the case The information directly reflects the difference between the moving state and the moving state when the liquid immersion area is formed on the second stage. Therefore, the control device controls the movement of at least one of the first stage and the second stage based on the first movement information and the second movement information, thereby determining whether the liquid immersion area exists. It is possible to control at least one of the first stage and the second stage so that no error is caused.
  • the control device controls the mask stage or the mask stage and the first and second masks based on the first movement information and the second movement information. By controlling the movement of one of the second stages, it is also possible to correct the error in the positional relationship between the mask and the object due to the difference in the movement state. Therefore, it is possible to improve the pattern transfer accuracy.
  • the present invention can be said to be a device manufacturing method including a lithographic process for executing any of the first and second exposure apparatuses of the present invention.
  • a device pattern is transferred onto an object via a projection optical system and a liquid by using one of the first and second exposure apparatuses of the present invention, thereby providing a finer image.
  • the pattern can be transferred onto the object with high accuracy, and the yield of highly integrated microdevices can be improved, and the productivity can be improved. Therefore, according to another aspect of the present invention, there is provided a device manufacturing method including a step of transferring a device pattern onto an object via a liquid using any of the first and second exposure apparatuses of the present invention. It can be said that
  • FIG. 1 is a view showing a schematic configuration of an exposure apparatus according to a first embodiment.
  • FIG. 2 is a perspective view showing a wafer stage of FIG. 1.
  • FIG. 3 is a flowchart showing a processing algorithm of a CPU in a main controller when performing a series of exposure processes on a plurality of lots of wafers.
  • FIG. 4 is a flowchart showing a specific example of a subroutine of step 106 in FIG. 3.
  • FIG. 5 (A) is a diagram showing an example of a target trajectory of a wafer stage.
  • FIG. 5 (B) is a view showing a time change (target value) of the speed of the wafer stage corresponding to FIG. 5 (A).
  • FIG. 5 (C) is a diagram showing a thrust (command value) corresponding to FIG. 5 (B).
  • FIG. 5 (D) is a view showing a drive current value corresponding to FIG. 5 (C).
  • FIG. 6 (A) is a view showing an actual movement locus of the wafer stage in a non-liquid immersion state when the drive current I of FIG. 5 (D) is given as a command value to the Y linear motor.
  • FIG. 6 (B) is a view showing the actual drive current used in the Y linear motor corresponding to FIG. 6 (A).
  • FIG. 7 is a view showing an actual movement trajectory in a liquid immersion state of the wafer stage when the Y linear motor is driven by the drive current of FIG. 6 (B).
  • FIG. 8 is a diagram showing information on the difference between FIG. 6 (A) and FIG. 7;
  • FIG. 9 is a diagram showing a configuration of a main part of an exposure apparatus according to a second embodiment.
  • FIG. 10 is a flowchart illustrating an embodiment of the device manufacturing method of the present invention.
  • FIG. 11 is a flowchart showing a specific example of step 204 in FIG. 10.
  • FIG. 1 shows a schematic configuration of an exposure apparatus 100 according to a first embodiment to which the driving method of the present invention is applied.
  • the exposure apparatus 100 is a step-and-scan type projection exposure apparatus (scanning stepper (also called a scanner)). In the exposure apparatus 100, immersion exposure is performed as described later.
  • the exposure apparatus 100 includes a light source 1 and an illumination unit 10, an illumination system for illuminating the reticle R with illumination light (exposure light) IL, and a reticle stage RST as a mask stage for holding the reticle R as a mask.
  • a projection unit PU, and a wafer W as an object are mounted thereon.
  • An eno, a stage WST, the reticle stage RST, the projection unit PU, and the like are mounted. It is equipped with the mounted body BD and these control systems.
  • an ArF excimer laser light source having an output wavelength of 193 nm is used as an example here.
  • This light source 1 is connected to one end of an illumination system housing 10a constituting an illumination unit 10 via a light transmission optical system (beam line) 2 partially including an optical system for adjusting an optical axis called a beam matching unit. It is connected.
  • the light source 1 is actually used in a low-clean service room separate from the clean room in which the exposure apparatus body including the illumination unit 10, the projection unit PU and the body BD is installed, or a utility space below the clean room floor. It is installed.
  • the illumination unit 10 includes an illumination system housing 10a for isolating the interior from the outside, and an illumination optical system housed in the interior.
  • the illumination optical system includes, for example, an illuminance uniforming optical system including an optical integrator and the like, a beam splitter, as disclosed in Japanese Patent Application Laid-Open No. 2001-313250 and US Patent Application Publication No. 2003Z0025890 corresponding thereto. It is configured to include a relay lens, a variable ND filter, a reticle blind, etc. (all not shown).
  • the illumination optical system may be configured similarly to the illumination optical system disclosed in, for example, JP-A-6-349701 and the corresponding US Pat. No. 5,534,970.
  • a slit-shaped illumination area defined by a reticle blind on a reticle R on which a circuit pattern or the like is drawn is illuminated with illumination light (exposure light) IL with substantially uniform illuminance.
  • illumination light exposure light
  • a fly-eye lens, a rod integrator (internal reflection type integrator), a diffractive optical element, or the like can be used as the optical integrator.
  • the reticle stage RST is, for example, about several meters above a reticle base RB provided above a top plate 36 of a second column 34 by an air bearing (not shown) provided on the bottom surface. Floating support through the clearance. On reticle stage RST, reticle R force is fixed by, for example, vacuum suction (or electrostatic suction).
  • reticle stage RST is a reticle stage drive that includes a linear motor, etc.
  • the moving unit 12 causes the projection optical system PL to be described later in a two-dimensional manner (in the XY plane perpendicular to the optical axis AX of the projection optical system PL) (in the X-axis direction, the Y-axis direction, and the rotation direction about the Z-axis perpendicular to the XY plane ( ⁇ z-direction).
  • a two-dimensional manner in the XY plane perpendicular to the optical axis AX of the projection optical system PL
  • the rotation direction about the Z-axis perpendicular to the XY plane ⁇ z-direction
  • reticle stage RST includes a reticle coarse movement stage that can be driven in a predetermined stroke range in the Y-axis direction on reticle base RB by a linear motor, and at least a reticle coarse movement stage. It includes a reticle fine movement stage that can be finely driven in the X-axis direction, Y-axis direction, and ⁇ z direction by an actuator such as three voice coil motors. It is shown as Therefore, also in the following description, the reticle stage RST can be finely driven by the reticle stage drive unit 12 in the X-axis direction, the Y-axis direction, and the ⁇ ⁇ z direction as described above, and can be simply driven to scan in the Y-axis direction. The description will be made assuming that this is one stage.
  • Reticle stage RST has a movement stroke in the Y-axis direction that allows at least the entire surface of reticle R to cross optical axis AX of projection optical system PL.
  • the mover of the above-described linear motor is mounted on one side and the other side (left side and right side in FIG. 1) of the reticle stage RST in the X-axis direction, respectively.
  • the corresponding stators are respectively supported by support members (not shown) provided separately from the body BD. For this reason, the reaction force acting on the stator of the linear motor when driving the reticle stage RST is transmitted (released) to the floor of the clean room via those support members.
  • the reticle stage drive section 12 is configured to include an actuator such as a linear motor or a voice coil motor as described above. In FIG. 1, for convenience of illustration, it is shown as a simple block.
  • a reaction force canceling mechanism having a reaction frame structure that allows reaction force to escape through a support member provided separately from the body BD is employed when the reticle stage RST moves.
  • a counterforce canceling mechanism having a countermass structure using a law of conservation of momentum and having a countermass to cancel the reaction force may be employed.
  • the position of the reticle stage RST in the stage movement plane is, for example, about 0.5—l nm by a reticle laser interferometer (hereinafter, referred to as “reticle interferometer”) 16 via a movable mirror 15. Is always detected with a resolution of. In this case, position measurement is performed with reference to the fixed mirror 14 fixed to the side surface of the lens barrel 40 constituting the projection unit PU.
  • a movable mirror having a reflective surface orthogonal to the Y-axis direction and a movable mirror having a reflective surface orthogonal to the X-axis direction are provided on the reticle stage RST.
  • a reticle Y interferometer and a reticle X interferometer are provided correspondingly, and correspondingly, a fixed mirror for X-direction position measurement and a fixed mirror for Y-direction position measurement are provided.
  • these are typically shown as a moving mirror 15, a reticle interferometer 16, and a fixed mirror 14.
  • the end surface of reticle stage RST may be mirror-finished to form a reflection surface (corresponding to the reflection surface of movable mirror 15).
  • At least one corner-cube mirror (for example, a retro-reflector) is used instead of the reflecting surface extending in the X-axis direction used for detecting the position of the reticle stage RST in the scanning direction (Y-axis direction in this embodiment).
  • the reticle Y interferometer and the reticle X interferometer for example, the reticle Y interferometer is a two-axis interferometer having two measurement axes, and the reticle stage RST is controlled based on the measurement value of the reticle Y interferometer.
  • rotation in the ⁇ z direction which is the direction of rotation around the Z axis, can be measured.
  • the measurement value of reticle interferometer 16 is sent to main controller 20.
  • Main controller 20 determines the X, ⁇ , and ⁇ directions of reticle stage RST based on the measurement value of reticle interferometer 16. The position is calculated, and based on the position of the reticle stage RST, the drive of the reticle stage RST is controlled via the reticle stage drive unit 12.
  • a reticle mark on the reticle R and a corresponding reference mark on the reference mark plate on the wafer stage WST are placed via a projection optical system PL (not shown).
  • a pair of reticle alignment detection systems consisting of a TTR (Through The Reticle) alignment system using light of an exposure wavelength for simultaneous observation is provided at a predetermined distance in the X-axis direction.
  • TTR Through The Reticle
  • these reticle alignment detection systems those having the same configuration as those disclosed in, for example, Japanese Patent Application Laid-Open No. 7-176468 and US Patent No. 5,646,413 corresponding thereto are used. .
  • the disclosures in the above-mentioned gazettes and corresponding US patents are incorporated herein by reference.
  • the projection unit PU has a body BD below the reticule stage RST in FIG. It is held in the first column 32 that constitutes it.
  • the configuration of the body BD will be described.
  • the body BD includes a first column 32 installed on a base BS placed horizontally on the floor of a clean room, and a second column 34 fixed on the upper surface of the first column 32.
  • the first column 32 has a plurality of legs, for example, three legs 39 (however, legs on the back side of the drawing in FIG. 1 are not shown), and upper ends of these legs 39 are connected to lower ends thereof, respectively.
  • a lens barrel surface plate 38 that forms the ceiling of the first column 32 is provided. This lens barrel base 38 is supported substantially horizontally by a plurality of legs, here three legs 39.
  • the lens barrel base 38 has a circular opening (not shown) substantially at the center thereof, into which the projection unit PU also receives an upward force.
  • the projection unit PU includes a lens barrel 40 and a projection optical system PL including a plurality of optical elements held by the lens barrel 40.
  • the lens barrel 40 of the projection unit PU is provided with a flange FLG at an outer peripheral portion slightly below the center in the height direction, and the projection unit PU is supported by the lens barrel base 38 via the flange FLG. .
  • the lower ends of a plurality of legs 41 for example, three legs 41 (however, the legs on the back side of the paper in FIG. 1 are not shown) are fixed at positions surrounding the projection unit PU.
  • the top plate 36 described above is fixed to the upper end surfaces of these legs 41, and is horizontally supported by these legs 41. That is, the second column 34 includes the top plate 36 and the three legs 41 that support the top plate 36.
  • the top plate 36 of the second column 34 is provided with an opening in the center thereof, which serves as a passage for the illumination light IL.
  • a plurality of anti-vibration units 37 are provided on the top surface side of the top plate 36 outside the opening.
  • the reticle base RB described above is provided.
  • the anti-vibration unit 37 has an air damper and an electromagnetic actuator, insulates high-frequency vibrations with the air damper, and drives the actuator based on the output of a vibration sensor attached to the reticle base RB to reduce the vibration. Active vibration damping devices that control frequency vibrations are used.
  • the vibration isolating unit 37 prevents the vibration force generated on the reticle base from being transmitted to the body BD by the operation of the reticle stage RST.
  • the projection optical system PL constituting the projection unit PU for example, a refraction optical system having a plurality of lenses (lens elements) having a common optical axis AX in the Z-axis direction is used. Yes.
  • the projection optical system PL has a predetermined projection magnification (for example, 1Z4 times, 1Z5 times, or 1Z8) by, for example, double telecentricity. Therefore, when the illumination area of the reticle R is illuminated by the illumination light IL from the illumination system, the illumination light IL that has passed through the reticle R passes through the projection unit PU (projection optical system PL).
  • a reduced image of the circuit pattern of the reticle R in the region (a reduced image of a part of the circuit pattern) is formed on the wafer W having a surface coated with a resist (photosensitive agent).
  • the wafer W is a disk-shaped substrate such as a semiconductor (such as silicon) or an SOI (Silicon Insulator), and a resist is applied thereon.
  • the aperture on the reticle side increases as the numerical aperture NA substantially increases. For this reason, it is difficult for the refractive optical system including only the lens to satisfy the Petzval condition, and the projection optical system tends to be large.
  • a catadioptric system including a mirror and a lens may be used.
  • a reflection system that does not include a refraction element (lens) may be used.
  • a lens as an optical element closest to the image plane side (the wafer W side) constituting the projection optical system PL (hereinafter referred to as “lens”).
  • a liquid supply nozzle 51A and a liquid recovery nozzle 51B that constitute a liquid supply / discharge unit 132 as a liquid immersion device are provided.
  • the liquid supply nozzle 51A has one end connected to the other end of a supply pipe (not shown) connected to a liquid supply device (not shown), and the liquid recovery nozzle 51B has one end connected thereto.
  • the other end of a collection pipe (not shown) connected to a liquid collection device (not shown) is connected.
  • the liquid supply device is configured to include a liquid tank, a pressure pump, a temperature control device, a valve for controlling supply and stop of the liquid to the supply pipe, and the like.
  • a valve for example, it is desirable to use a flow rate control valve so that the flow rate can be adjusted as well as supply / stop of the liquid.
  • the temperature control device adjusts the temperature of the liquid in the liquid tank to a temperature substantially equal to the temperature in a chamber (not shown) in which the exposure apparatus main body is housed.
  • a tank for supplying liquid, a pressure pump, a temperature controller It is not necessary that the exposure apparatus 100 is provided with all of the lubes, and at least a part thereof can be replaced with equipment such as a factory where the exposure apparatus 100 is installed.
  • the liquid recovery device is configured to include a liquid tank and a suction pump, a valve for controlling stop of liquid recovery via the recovery pipe, and the like.
  • As the valve it is desirable to use a flow control valve corresponding to the above-described valve on the liquid supply device side.
  • the tank, suction pump, valve, etc. for recovering the liquid need not be all equipped in the exposure apparatus 100, and at least a part of it should be replaced with equipment such as a factory where the exposure apparatus 100 is installed. You can also.
  • ultrapure water (hereinafter, simply referred to as "water” unless otherwise required) through which ArF excimer laser light (light having a wavelength of 193 nm) passes is used.
  • Ultrapure water has the advantage that it can be easily obtained in large quantities at semiconductor manufacturing plants and the like, and that it has no adverse effect on the photoresist or optical lenses on the wafer.
  • ultrapure water since ultrapure water has no adverse effect on the environment and has an extremely low impurity content, it can be expected to have an effect of cleaning the surface of the wafer and the surface of the tip lens 91.
  • the refractive index n of water with respect to ArF excimer laser light is approximately 1.44.
  • the liquid supply device and the liquid recovery device each include a controller, and each controller is controlled by the main controller 20.
  • the controller of the liquid supply device opens the valve connected to the supply pipe at a predetermined opening, and supplies water between the tip lens 91 and the wafer W via the liquid supply nozzle 51A. Supply.
  • the controller of the liquid recovery apparatus opens the valve connected to the recovery pipe at a predetermined opening in accordance with an instruction from the main controller 20, and connects the tip lens 91 and the wafer via the liquid recovery nozzle 51B. Water is collected inside the liquid recovery device from between W.
  • main controller 20 always supplies the amount of water supplied by liquid supply nozzle 51A between tip lens 91 and wafer W and the amount of water recovered through liquid recovery nozzle 51B.
  • a command is given to the liquid supply device and the liquid recovery device so as to be equal. Therefore, a certain amount of water Lq (see FIG. 1) is held between the tip lens 91 and the wafer W.
  • the water Lq held between the tip lens 91 and the wafer W is constantly replaced.
  • the liquid immersion device 132 of the present embodiment includes the liquid supply device, the liquid recovery device, the supply pipe, the recovery pipe, the liquid supply nozzle 51A, the liquid recovery nozzle 51B, and the like. This is a local immersion apparatus configured to include, and when exposing a wafer W, an immersion area is formed on a part of the wafer W.
  • a force in which one liquid supply nozzle and one liquid recovery nozzle are provided is not limited to this.
  • a configuration having many nozzles may be employed. The point is that any configuration can be used as long as the liquid can be supplied between the lowermost optical member (tip lens) 91 and the wafer W constituting the projection optical system PL.
  • a liquid immersion mechanism disclosed in WO2004Z053955 pamphlet and a liquid immersion mechanism disclosed in European Patent Publication No. 1420298 can also be applied to the exposure apparatus of the present embodiment.
  • main controller 20 is configured to be able to instantaneously detect the occurrence of water leakage in the liquid immersion area based on the output of this water leakage sensor.
  • the wafer stage WST is supported in a floating manner on an upper surface of a stage base 71 horizontally arranged below the projection unit PU via an air bearing provided on the bottom surface thereof in a non-contact manner.
  • the wafer W is held on the wafer stage WST via the wafer holder 70 by vacuum suction (or electrostatic suction).
  • the stage base 71 is installed on the base BS via a plurality of vibration isolation units 43.
  • Each anti-vibration unit 43 has the same configuration as the anti-vibration unit 37 described above.
  • the vibration force generated on the stage base 71 by the operation of the wafer stage WST is prevented from being transmitted to the first column 32 via the base BS.
  • the configuration is such that the body BD (first column 32) holding the projection optical system PL and the like and the stage base 71 are vibrationally separated.
  • the wafer stage WST is driven by a predetermined stroke in the X-axis direction and the Y-axis direction by the wafer stage drive unit 24, and is moved in the Z-axis direction (the optical axis AX direction of the projection optical system PL). It is designed to be minutely driven in the x direction (rotation direction around the X axis), ⁇ y direction (rotation direction around the Y axis), and ⁇ z direction (rotation direction around the Z axis).
  • the wafer stage drive unit 24 includes, for example, an X linear motor that drives the wafer stage WST in the X-axis direction, a Y linear motor that drives the wafer stage WST in the Y-axis direction, and a plurality of linear motors and voice coil motors. It is composed to include The motors that make up the stage drive unit 24 are controlled by the main controller 20.
  • Position information in the XY plane of the wafer stage WST is obtained, for example, by a wafer laser interferometer (hereinafter, referred to as a "wafer interferometer") 18 that irradiates a movable mirror 17 fixed thereon to a measurement beam.
  • a wafer interferometer a wafer laser interferometer
  • 0.5 Always detected with a resolution of about lnm.
  • This wafer interferometer 18 is fixed to the body BD, and transfers the position information of the reflecting surface of the movable mirror 17 with respect to the reflecting surface of the fixed mirror 28 fixed to the side surface of the lens barrel 40 constituting the projection unit PU on the wafer stage. Measured as WST position information.
  • moving mirror 17Y having a reflecting surface orthogonal to the Y-axis direction, which is the scanning direction
  • X-axis which is the non-scanning direction
  • a movable mirror 17X having a reflecting surface orthogonal to the direction is provided, and correspondingly, a laser interferometer and a fixed mirror are provided for the X-axis position measurement and the Y-axis position measurement, respectively.
  • these are typically shown in FIG. 1 as a moving mirror 17, a wafer interferometer 18, and a fixed mirror 28.
  • the end surface of the ueno or the stage WST may be mirror-finished to form a reflection surface (corresponding to the reflection surfaces of the movable mirrors 17X and 17Y).
  • the X laser interferometer and the Y laser interferometer are multi-axis interferometers having a plurality of measuring axes. In addition to the X and Y positions of the wafer stage WST, rotation (jowing (rotation in the z direction), pitching ( ⁇ Rotation in the X direction) and rolling (rotation in the y direction)) can also be measured.
  • the multi-axis interferometer irradiates a laser beam onto a reflecting surface (not shown) installed on the body BD on which the projection unit PU is mounted, via a reflecting surface installed on the wafer stage WST at an angle of 45 °,
  • the relative position information of the projection optical system PL in the optical axis direction may be detected.
  • Position information (or speed information) of wafer stage WST is sent to main controller 20, and the main control is performed.
  • the control device 20 controls the wafer stage WST via the wafer stage drive unit 24 based on the position information (or speed information).
  • a wafer stage WST is mounted on a XY two-dimensional plane by a linear motor or a planar motor in a XY two-dimensional plane, and mounted on the XY stage via a Z ⁇ tilt drive mechanism including a voice coil motor and the like. It may have a hierarchical structure including a wafer table. In this case, the wafer table is driven in a Z-axis direction, a ⁇ direction, and a 0y direction by a tilt drive mechanism.
  • the wafer stage WST may be a stage having a coarse / fine movement structure, for example, by allowing the wafer table to be finely moved at least in the X-axis and Y-axis directions with respect to the XY stage.
  • the wafer holder 70 includes a diagonal line on one side of a square wafer stage WST (wafer table) in a peripheral portion of a region (central circular region) on which the wafer W is mounted.
  • the main body of a specific shape where the two corners located at the top protrude, and the two corners located on the other diagonal are slightly larger than the above-mentioned circular area! /,
  • auxiliary plates 22a to 22d are almost the same height as the surface of the wafer W (the difference in height between the two is at most about lmm).
  • the auxiliary plates 22a to 22d are formed so as to cover the entire surface of the wafer stage WST, which is partially formed on the wafer stage WST, so that the upper surface of the wafer stage WST is substantially at the same height (level). ) Is desirable.
  • the upper surfaces of the movable mirrors 17X and 17Y are also approximately the same height as the auxiliary plate.
  • the surface of the auxiliary plates 22a to 22d does not necessarily have to be at the same height as the surface of the wafer W. If the liquid Lq can be favorably maintained on the image surface side of the front lens 91, the auxiliary plates 22a to 22d There may be a step between the surface of the wafer W and the surface of the wafer W.
  • the dimension of the gap D is 0.1-0.4. It is set to a value of the order.
  • the force of the notch (V-shaped notch) existing in a part of the wafer W is not shown because the size of the notch is about lmm smaller than the gap D. Yes.
  • a rectangular opening is formed in a part of the auxiliary plate 22a in plan view (viewing the upward force), and a fiducial mark plate FM is fitted in the opening.
  • the surface of the fiducial mark plate FM is flush (same surface) with the auxiliary plate 22a.
  • the reference mark plate FM has a plurality of pairs of first fiducial marks for reticle alignment and a plurality of second fiducial marks each forming a pair with the first fiducial mark of each pair (off-axis (not shown)).
  • Axis-based alignment system (ofaxis' alignment system) is formed.
  • each of the pair of first fiducial marks is respectively detected by the above-described pair of reticle alignment detection systems, and at the same time, the pair of first fiducial marks are detected by an unshown offaxis alignment system.
  • the second fiducial mark paired with the mark can be detected.
  • a fiducial mark plate having the same configuration as that of M is disclosed in, for example, JP-A-7-176468 and corresponding US Pat. No. 5,646,413.
  • An off-axis alignment system is provided near the force projection unit PU, not shown.
  • Examples of the Ofaxis' alignment system include, for example, Japanese Patent Application Laid-Open No. 2001-257157 and US Patent Application Publication No. 2001Z0023918 corresponding thereto, and Japanese Patent Application Laid-Open No. 8-213306 and US Patent No. 5 corresponding thereto.
  • the target mark is irradiated with a broadband detection light beam that does not expose the resist on the wafer, and the image of the target mark formed on the light receiving surface by reflected light from the target mark
  • An image processing type FIA (Field Image Alignment) -based alignment sensor that captures an image of the illustrated index using an image sensor (CCD) or the like and outputs an image signal of the image is used. Based on the output of this off-axis alignment system, it is possible to measure the position of the reference mark on the reference mark plate FM and the alignment mark on the wafer in the X and Y two-dimensional directions.
  • the exposure apparatus 100 of the present embodiment further includes an irradiation system and a light receiving system (both not shown), for example, Japanese Patent Application Laid-Open No. 6-283403 and US Pat. No. 5,448,333 corresponding thereto.
  • a multi-point focal point position detection system of the oblique incidence type similar to that disclosed in Japanese Patent Application Laid-Open No. H10-260, etc. is provided.
  • the irradiation system is suspended and supported below the barrel base 38 at the -X side of the liquid supply nozzle 51A, and the light receiving system is supported at the barrel base 38 at the + X side of the liquid recovery nozzle 51B. It is suspended and supported below. That is, the irradiation system, the light receiving system, and the projection unit PU are mounted on the same member (the lens barrel base 38), and the positional relationship between them is maintained constant.
  • the irradiation system has a light source whose on / off is controlled by main controller 20, and emits a light beam for forming images of a large number of pinholes or slits toward the imaging plane of projection optical system PL.
  • C. Irradiate the surface obliquely to the optical axis AX.
  • the reflected light flux of the light flux reflected on the wafer surface is received by the light receiving element in the light receiving system and converted into an electric signal (defocus signal). This defocus signal (defocus signal) is supplied to the main control device 20.
  • the main controller 20 calculates the Z position, the rotation in the ⁇ X direction, and the rotation in the ⁇ y direction on the surface of the wafer W based on a defocus signal (defocus signal) such as an S-curve signal at the time of scanning exposure to be described later.
  • a defocus signal defocus signal
  • the control system is mainly configured by main controller 20 in FIG.
  • the main controller 20 includes a so-called microcomputer (or workstation) that also has a CPU (central processing unit), ROM (read only memory), RAM (random access memory), and the like. Control and control the whole.
  • the main controller 20 has a memory 21 ing.
  • step 102 an unexposed wafer W to be exposed next is placed on a wafer stage WST by using a wafer loader (not shown), and a wafer number in a lot to be exposed is indicated.
  • the count value n of the counter is initialized to "1" (rnl).
  • next step 104 the used reticle mounted on the reticle stage RST is replaced with a reticle R used for current exposure using a reticle loader (not shown).
  • a reticle loader not shown
  • the reticle used for the next exposure is simply loaded on reticle stage RST.
  • next step 106 the process proceeds to a subroutine for reticle alignment and baseline measurement.
  • reticle stage RST and wafer stage WST are moved to their respective reference positions.
  • the reference position of reticle stage RST refers to the position of reticle stage RST where the approximate center of the irradiation area of illumination light IL by the illumination system coincides with the approximate center of reticle R.
  • the reference position of the wafer stage WST is set at a position where the projection optical system PL projects a predetermined pair of reticle alignment marks formed on the reticle R on the reticle stage RST at the reference position.
  • Reference mark plate corresponding to alignment mark Indicates the position on the FM where a pair of first reference marks is located.
  • the reticle stage RST is moved via the reticle stage drive section 12 based on the measurement value of the reticle interferometer 16, and the wafer stage drive section 24 is moved based on the measurement value of the wafer interferometer 18.
  • the wafer stage WST is moved via.
  • the controller of the liquid supply device is instructed to start supplying water.
  • the controller of the liquid recovery device is instructed to start collecting water.
  • the liquid supply nozzle starts supplying water with the liquid supply nozzle 51A, and after a lapse of a predetermined time, the gap between the front end lens 91 and the fiducial mark plate FM surface is filled with the supplied water. Then, the water that is about to leak out from the gap is recovered by the liquid recovery device via the liquid recovery nozzle 51B.
  • the controller of each of the liquid supply device and the liquid recovery device controls the flow rate of the water supplied per unit time and the recovered water.
  • each valve in the water supply / drainage system is adjusted so that the flow rate is almost the same. Therefore, a certain amount of water is always held between the tip lens 91 and the reference mark plate FM. Also, in this case, the gap between the tip lens 91 and the reference mark plate FM is about 13 mm, so that water is held between the tip lens 91 and the reference mark plate FM by the surface tension. Almost no leakage occurs outside the projection unit PU.
  • the reference mark The relative position between a pair of predetermined first fiducial marks on the plate FM and a pair of reticle alignment marks on the reticle R corresponding to the predetermined pair of first fiducial marks is determined by the pair of reticle alignment marks described above. Simultaneously with the detection using the detection system, the second reference mark on the reference mark plate FM is detected using the alignment system, and the relative position between the detection center of the alignment system and the second reference mark is detected.
  • the wafer stage WST and the reticle stage RST are each step-moved in the opposite direction along the Y-axis direction by a predetermined distance, and another pair of the reference mark plate FM are moved.
  • the relative position between the first fiducial mark and another pair of reticle alignment marks on the reticle R corresponding to the first fiducial mark is detected using the above-mentioned pair of reticle alignment detection systems, and at the same time, the alignment system is detected.
  • the alignment system is detected.
  • the relative positions of another pair of first reference marks on the reference mark plate FM and another pair of reticle alignment marks on the reticle R corresponding to the first reference mark are similarly determined.
  • Position and fiducial mark plate Alignment of another 2nd fiducial mark on FM The detection center and the relative position of the system may be further measured.
  • the next step 162 information on the relative positions of at least two pairs of the first fiducial marks and the corresponding reticle alignment marks obtained as described above, and the reticle stage RST at the time of each measurement.
  • the reticle stage coordinate system defined by the measurement axis of the reticle interferometer 16 and the measurement axis of the wafer interferometer 18 are used.
  • the relationship with the specified wafer stage coordinate system is obtained and stored in a memory such as a RAM (not shown). This ends the reticle alignment.
  • the scanning exposure is performed by synchronously scanning the reticle stage RST and the wafer stage WST in the Y-axis direction of the wafer stage coordinate system.
  • the reticle stage coordinate system and the wafer stage coordinate system are used. Scanning of reticle stage RST is performed based on the relationship with the system.
  • the alignment system baseline i.e., the projection center of the reticle pattern and the detection center of the alignment system Calculate the distance (positional relationship) with (index center) and store the calculation result in a memory such as RAM.
  • step 166 the process proceeds to step 166, and all the water on the fiducial mark plate FM is collected. Specifically, instruct the controller of the liquid supply device to stop water supply with the reference mark plate FM directly below the projection unit PU. At this time, since the recovery of water through the liquid recovery nozzle 51B by the liquid recovery device is continued, the water on the reference mark plate FM is almost completely recovered by the liquid recovery device after a predetermined time has elapsed. You.
  • step 112 wafer alignment is performed on the wafer W loaded on the wafer stage WST, for example, Japanese Patent Application Laid-Open No. 61-44429 and the corresponding US Patent No. 4,780,617.
  • the EGA Enhanced Global Alignment
  • the alignment mark on the wafer w is detected by an alignment system (not shown) in the absence of water, and the arrangement coordinates of each shot area on the wafer w, that is, the center of each shot area on the wafer stage coordinate system is detected.
  • the position coordinates are calculated and stored in a memory such as a RAM (not shown).
  • a memory such as a RAM (not shown).
  • a non-exposed wafer (dummy wafer) having the same contact angle of water Lq as the surface of the wafer W is used instead of the wafer W. It is also possible to load the wafer stage WST, perform reticle alignment and baseline measurement (step 106), and place the wafer W to be exposed next after step 106 on the wafer stage WST! ,. As described above, when a reticle alignment or a base line measurement is performed, the wafer W on the wafer holder 70 is placed by placing the ueno, W (or non-exposed ueno) on the wafer stage WST. Water can be prevented from entering the area.
  • step 114 it is determined whether or not the count value n of the above-mentioned counter is 1 so that the wafer W to be exposed is locked. It is determined whether the front wafer is a force or not. If this determination is affirmative, that is, if the wafer W is the first wafer in the lot, the process proceeds to step 116.
  • step 116 wafer stage WST is driven by the step-and-scan method according to the same target trajectory as when exposing a plurality of shot areas on the wafers of the lot, and wafer stage WST at that time is driven.
  • a profile of a current value supplied to a linear motor that drives the wafer stage WST in the X-axis direction and the Y-axis direction is recorded in a memory and stored as control parameter data (data2) in synchronization with the sampling clock.
  • “according to the same target trajectory as when exposing the wafer” means “the positional relationship between the wafer stage WST and the projection optical system (and the liquid immersion area) on the wafer stage WST, the speed of the wafer stage WST, Acceleration, etc. And the target trajectory of the wafer stage according to this condition setting.
  • Main controller 20 performs function fitting on datal and data2 to obtain an approximate function (complementary function), and stores datal and data2 in memory 21 in the form of the approximate function. You can keep it.
  • the driving of wafer stage WST in this step 116 is based on the above-mentioned target trajectory, the necessary thrust (function of time), and the target current value (time of time) for the linear motor corresponding to this thrust. (Function) is obtained by calculation, and based on the target current value, the X linear motor and the Y linear motor inside the wafer stage drive unit 24 are driven.
  • the first movement information (datal) of the wafer stage WST is not limited to the data of the movement trajectory (ie, the time change curve of the position) of the wafer stage WST. Any type of data may be used as long as it can be converted into data on the movement trajectory, such as a time change curve.
  • the control parameter data (data2) is not limited to the current value profile itself, but may be data such as a thrust profile as long as it can be converted to a current value profile! ,.
  • step 116 the operation in step 116 will be described in more detail.
  • the acceleration time for reticle stage RST and wafer stage WST to accelerate to their respective target scanning speeds is Tl
  • the synchronization settling time for both stages RST and WST is T2.
  • the exposure time is ⁇ 3
  • main controller 20 monitors the measured value of wafer interferometer 18 on wafer W based on the result of the wafer alignment in step 112 and the measurement result of the above-described baseline, while monitoring the measured value of wafer interferometer 18.
  • the wafer stage WST is moved to the scanning start position (acceleration start position) for the exposure of the first shot (first shot area).
  • main controller 20 determines the change (target value) of speed Vy in the ⁇ ⁇ ⁇ -axis direction of wafer stage WST on the horizontal axis as time (t). As shown in Fig.
  • FIG. 5 (B) shows a target trajectory (time change of position Py) in the Y-axis direction of wafer stage WST corresponding to the time change (target value) of the speed in FIG. 5 (B).
  • step 116 the main controller 20 executes the processing shown in FIG.
  • the time change (target value) of the speed Vy shown in (B) is calculated, and the command value (function of time) of the thrust F shown in Fig. 5 (C) is calculated based on this time change of the speed Vy. Then, the command value of the drive current value 1 (a function of time) shown in FIG. 5 (D) is calculated based on the command value of this thrust.
  • the main controller 20 supplies the drive current value I to the Y linear motor, whereby the above-described scanning operation for the first shot on the wafer W is performed.
  • main controller 20 moves wafer stage WST stepwise in the X-axis and Y-axis directions via wafer stage drive unit 24, and moves the second shot (second shot) on wafer W. Move to the acceleration start position for exposure of the (th shot area).
  • main controller 20 performs the same scanning operation of wafer stage WST as described above.
  • the movement direction of wafer stage WST at this time is opposite to that during the first shot.
  • the scanning operation and the step moving operation of the wafer stage WST are performed in this manner until the scanning operation for the M-th (M is the total number of shots on the wafer W) scanning area is completed. It is performed alternately and repeatedly. That is, in this way, the step “and” scan operation of wafer stage WST is performed based on the target trajectory.
  • Main controller 20 continuously writes the measured value of wafer interferometer 18 in memory 21 during the above-mentioned step 'and' scan operation of wafer stage WST. As a result, the measured force of the X and Y interferometers of the wafer interferometer 18 is written into the memory 21 at the sampling clock interval of those interferometers. Main controller 20 also controls the wafer The driving current values given from the respective drivers to the X linear motor and the Y linear motor that constitute the stage driving unit 24 are synchronized with the X interferometer of the wafer interferometer 18 and the sampling clock of the interferometer. Memory 21 bytes are written.
  • the profile (data2) of the current value supplied to the motor is stored in the memory 21.
  • step 118 water supply and recovery are started in the same manner as in step 154 described above, and the space between the front end lens 91 of the projection optical system PL and the wafer holder 70 (ie, Water is supplied and held between the end lens 91 and the wafer or the auxiliary plate.
  • the flow rate of the water supplied per unit time and the collected water are controlled by the respective controllers of the liquid supply device and the liquid recovery device. The opening of each valve in the water supply / drainage system is adjusted so that the flow rate is almost the same.
  • step 114 determines whether the wafer W to be exposed is the second or subsequent wafer in the lot. If the determination in step 114 is negative, that is, if the wafer W to be exposed is the second or subsequent wafer in the lot, step 116 is skipped and the process proceeds to step 118 .
  • step 120 it is determined again whether or not the count value n of the aforementioned counter is one. If the wafer W is the first wafer in the lot and the judgment is affirmative, the process proceeds to step 122.
  • step 122 the current value profile (data2) stored in the memory 21 in step 116 is taken out, and the drive current according to the current value profile (data2) is configured by the wafer stage drive unit 24.
  • the X linear motor and the Y linear motor and perform the step 'and' scan operation in the liquid immersion state of the wafer stage WST in the same manner as in step 116.
  • the data of the movement trajectory of the wafer stage WST is referred to as data3.
  • main controller 20 obtains an approximate function (complementary function) by performing function fitting on the data of the movement locus, and stores the data in the form of the approximate function in data memory 3 as data 3. !
  • the movement trajectory of wafer stage WST (that is, time change of position) Any kind of data that can be converted to the data of the movement trajectory, such as not only the data of the curve itself but also the time change curve of the speed and the time change curve of the acceleration, is acceptable.
  • the data (datal) of the movement trajectory of the wafer stage WST in the non-immersion state stored in the memory 21 in the above step 116 and the immersion state stored in the memory 21 in the above step 122 The difference from the data (data3) of the movement trajectory of the wafer stage WST below is calculated, and based on this difference, the amount of decrease in position controllability (position controllability correction information) due to the presence of liquid is calculated.
  • the correction information of the position controllability may be the correction amount of the current value given to the X linear motor or the Y re- motor, or the correction value of the thrust command value based on which the current value is calculated.
  • the correction value of the movement information includes correction values such as a target value of a position, a target value of a speed, and a target value of an acceleration in the X-axis direction and the Y-axis direction.
  • datal, data2, and data3 are acquired not only during scanning of wafer stage WST but also during step movement.
  • the present invention is not limited to this. Only datal, data2, and data3 can be obtained.
  • step 120 determines whether the wafer W to be exposed is the second or subsequent wafer in the lot. If the determination in step 120 is denied, that is, if the wafer W to be exposed is the second or subsequent wafer in the lot, steps 122 and 124 are skipped and the process proceeds to step 126. I do.
  • step 116 the command value of the drive current value 1 (a function of time) as shown in Fig. 5 (D) is calculated by the above-described procedure based on the target trajectory of Fig. 5 (A). This drive current value I is given to the Y linear motor.
  • the actual trajectory Py f, (t) force ata3 of the wafer stage WST as shown in FIG.
  • f (t) -f (t) is the data (datal) of the movement trajectory of the wafer stage WST in the non-immersion state and the liquid (datal). It is calculated as the difference from the data (data3) of the trajectory of the wafer stage WST under the immersion state.
  • f (t) f and (t) are the information itself indicating the amount of decrease (error amount) in the position controllability of the wafer stage WST due to the liquid immersion state. Accordingly, in step 124, the above-described correction information of the position controllability is calculated by calculation based on the difference f (t) f, (t).
  • step 126 in consideration of the above-described correction information, while adjusting at least one of the positions of the reticle stage RST and the wafer stage WST during the scanning exposure, the step-and-scan method is performed. Exposure of wafer W with. In this step 126, the following operations are performed in the same manner as in the ordinary scanning system.
  • the first shot on the wafer W is exposed. Move the wafer stage WST to the scan start position (acceleration start position).
  • the reticle blind in the illumination unit 10 is driven by the main controller 20 in synchronization with the reticle stage RST, and the illumination light IL is Unnecessary exposure that prevents irradiation outside the reticle R pattern area is prevented!
  • main controller 20 performs the relative movement between reticle stage RST and wafer stage WST while adjusting the position of wafer stage WST in consideration of the correction information calculated previously. ing.
  • the main controller 20 causes the ueno and the stage WST to move in the X-axis direction (and the Y-axis direction) via the ueno and the stage driving section 24. ), And is moved to the acceleration start position for exposure of the second shot (second shot area) on the wafer W.
  • main controller 20 moves wafer stage WST while adjusting the position of wafer stage WST in consideration of the previously calculated correction information. Move the wafer stage without considering the correction information You may let it.
  • step 127 after all the water on the wafer W has been collected in the same manner as in the above-mentioned step 166, the process proceeds to step 128, where the count value n of the above-mentioned counter becomes N (N is 1 By determining whether or not the total number of wafers in the lot is equal to or more than the total number of wafers in the lot, it is determined whether or not all wafers in the lot have been exposed to light. If this determination is denied, the process proceeds to step 130, in which the count value n is incremented by 1 (nn + 1), and then the process proceeds to step 134.
  • step 134 using an unshown wafer loader, the exposed wafer W placed on the wafer stage WST is replaced with an unexposed wafer to be exposed next.
  • step 112 EGA is executed to calculate the array coordinates of each shot area on the wafer and to store them in a memory such as a RAM (not shown).
  • step 118 supply and recovery of water are started in the same manner as in step 154 described above, and the space between the front end lens 91 of the projection optical system PL and the wafer holder 70 (that is, the front end lens 91 and the mirror). (Between c and the auxiliary plate) and supply water. Thereafter, water is held between the tip lens 91 and the wafer holder 70 until the exposure processing of the wafer W in step 126 is completed.
  • step 128 When a series of exposure processing for the last wafer in the lot is completed, the determination in step 128 is affirmed, and the flow shifts to step 132 to determine whether to end the processing.
  • step 132 determines whether to end the processing.
  • step 132 the process returns to step 102, and the processing in step 102 and subsequent steps is repeated to use the next reticle to process the next lot of wafers. Is performed in the same manner as described above.
  • the main control device 20 more specifically, the first acquisition device, the second acquisition device, and the control device are mainly controlled by the CPU and the software program.
  • An apparatus has been implemented. That is, the wafer stage is moved so that a predetermined target operation is performed in the first state in which the liquid immersion area is not formed on the stage WST by the processing of step 116 performed by the CPU.
  • a first acquisition device for acquiring the first movement information (movement trajectory, that is, position change information) of the wafer stage WST through the wafer interferometer 18 is realized, and the wafer stage WST is performed by the processing of step 122 performed by the CPU.
  • the stage In the second state in which the liquid immersion area is formed on the stage, the stage is moved so that the predetermined target operation is performed, and the second movement information (movement trajectory, That is, a second acquisition device for acquiring position change information) via the wafer interferometer 18 is realized.
  • step 124 the control error of the wafer stage caused by the presence of the liquid immersion area on the wafer stage is determined based on the first movement information and the second movement information.
  • a correction information creation device for creating correction information for correction is realized, and the processing of step 126 performed by the CPU is performed based on the first movement information and the second movement information.
  • a control device for controlling at least one movement with respect to the wafer stage has been realized.
  • main controller 20 also obtains the first movement information (datal) in step 116 described above, and performs the same processing in step 122 in step 122 described above.
  • data3 the wafer stage WST is moved so that the same target operation is performed based on the same control parameter data (data2), that is, the current value profile. Therefore, the difference between the first movement information and the second movement information is the difference between the first state and the second state in which the movement information is obtained, that is, the liquid immersion area on the wafer stage WST. Is formed, and the information directly reflects the difference between the moving state in the case where the liquid is immersed on the wafer stage WST and the moving state in the case where the liquid immersion area is formed on the wafer stage WST.
  • main controller 20 controls the movement of wafer stage WST based on the first movement information (datal) and the second movement information (data3).
  • the wafer stage WST can be controlled so that an error due to the presence or absence of the liquid immersion area on the wafer stage WST does not occur.
  • control of wafer stage WST at the time of exposure is performed in consideration of the correction information calculated based on the difference between the first movement information and the second movement information in step 124.
  • exposure apparatus 100 of the present embodiment transfers a pattern formed on reticle R by synchronously moving reticle stage RST holding wafer R and wafer stage WST in the Y-axis direction, to projection optical system PL and Transfer to the wafer on the wafer stage WST via water.
  • main controller 20 controls the movement of reticle stage RST based on the first movement information (datal) and the second movement information (data3), or controls the movement of reticle stage RST and wafer stage WST.
  • the movement it is also possible to correct an error in the positional relationship between the reticle and the wafer due to the difference in the movement state. Therefore, it is possible to improve the pattern transfer accuracy.
  • the pattern of reticle R can be transferred onto a wafer with high accuracy. For example, as a device rule, it is possible to realize the transfer of a fine pattern of about 70-100 nm.
  • k sheets (k is an integer of 2 or more) can be changed to 1
  • the measurement operation of datal, data2, and data3 may be performed every time immediately before the exposure of the wafer.
  • the present invention is not limited to this. That is, in the above steps 116 and 122, the output of the multipoint focal position detection system described above is taken in synchronization with the acquisition of the measurement value of the wafer interferometer 18, and the Z-axis is calculated from the taken output.
  • the first movement information, 2It may be included in the movement information. This makes it possible to correct a control error in at least one of the Z-axis direction, the ⁇ X direction, and the ⁇ y direction due to the presence of the liquid immersion area on wafer stage WST. .
  • An interferometer such as that disclosed in US Pat. No. 6,323,510, US Pat. No. 6,674,510, etc., may be used instead of, or in conjunction with, a focus position detection system. May be. To the extent permitted by the national laws of the designated country (or selected elected country) designated in this international application, the disclosures in each of the above-mentioned publications and corresponding US patents are incorporated herein by reference.
  • the second movement information when the liquid immersion area is formed on wafer stage WST and the second movement information when the liquid immersion area is formed on wafer stage WST, (1)
  • the case where movement information is acquired at the same frequency has been described.However, if a liquid immersion region is formed on the wafer stage WST, and the behavior of the stage in a case where the change over time can be ignored, , Something that does not change. Therefore, the first movement information of the wafer stage may be acquired in advance and stored in the memory 21 for each of the plurality of target trajectories expected to be used. In this case, just before the exposure, only the second movement information needs to be acquired, so that the throughput can be further improved.
  • the main control device 20 more specifically, the first acquisition device, the second acquisition device, and the control device are realized by the CPU and the software program. However, it goes without saying that at least a part of these may be configured by other hardware. Further, in the above embodiment, the main control device 20 described the case where the main controller 20 also serves as a stage controller, an exposure controller, and the like. It may be installed separately under the control device 20!
  • the wafer stage WST when the second movement information (data3) is obtained in step 122, the wafer is moved based on the current value (data2) as the control parameter obtained in step 116. If the current value (control parameter) as intended is supplied to wafer stage drive unit 24 when wafer stage WST is operated, the second movement is performed in step 122. When acquiring the information, the wafer stage WST may be operated based on the target current value (target control parameter) used in step 116.
  • reticle R when acquiring the first movement information and the second movement information, reticle R may be moved in the same manner as when wafer W is actually exposed.
  • FIG. 9 shows a configuration of a main part of an exposure apparatus 100 ′ of the second embodiment.
  • exposure apparatus 100 floats on stage base 71 via wafer bearings (not shown) provided on the bottom surfaces of wafer stage WST1, wafer stage WST2, and force, respectively. Supported.
  • Wafer stages WST1 and WST2 are configured similarly to wafer stage WST described above.
  • One of the wafer stages WST1 is driven by the wafer stage drive unit 24 in the direction of six degrees of freedom similarly to the above-described wafer stage WST.
  • a wafer W1 as an object (for example, the first (lot first) wafer in a lot) is held by suction via a wafer holder 70.
  • the position of the wafer stage WST1 in the directions of five degrees of freedom of X, ⁇ , ⁇ , 0y, and 0x is measured by the wafer interferometer 18 via the movable mirror 17.
  • the other wafer stage WST2 is driven by the wafer stage driving unit 124 having the same configuration as the wafer stage driving unit 24 in the six degrees of freedom direction in the same manner as the wafer stage WST described above. Driven.
  • a wafer W2 as an object (for example, the second wafer in a lot) is suction-held via a wafer holder 70.
  • the positions of the wafer stage WST2 in the X, ⁇ , ⁇ , 0y, and 0x directions of five degrees of freedom are measured by the wafer interferometer 118 via the movable mirror 117.
  • wafer interferometer 118 The measurement values of wafer interferometer 118 are supplied to main controller 20 in the same manner as wafer interferometer 18.
  • the wafer stage drive unit 124 is controlled by the main control device 20 in the same manner as the wafer stage drive unit 24!
  • an unshown axis alignment system is provided at predetermined intervals in a direction forming an angle of 45 degrees in the X-axis and Y-axis directions around the projection unit PU.
  • the eno and the stages WST1 and WST2 are two-dimensionally moved independently of each other in the respective movement areas including the projection area of the pattern by the projection optical system PL (the area conjugate to the aforementioned slit-shaped illumination area). It is possible to move the V and the gap below the Opaxis Alignment System.
  • the configuration of the other parts is the same as that of exposure apparatus 100 of the first embodiment described above.
  • main controller 20 applies the same current value (thrust value) to the linear motors constituting wafer stage drive units 24 and 124 based on the same target trajectory as at the time of exposure, so that both stages WST1 and WST2
  • the first movement information (corresponding to the datal described above) of the wafer stage WST2 is measured via the interferometer 118 and stored in the memory 21 in the same manner as in the above-described step 116.
  • the second movement information of the wafer stage WST1 (corresponding to data3 described above) is measured via the interferometer 18 and stored in the memory 21.
  • main controller 20 performs control based on the first movement information and the second movement information. Adjust at least one of reticle stage RST and wafer stage WST1 Then, the pattern of the reticle R is transferred to a plurality of shot areas on the wafer Wl in a step-and-scan manner.
  • main controller 20 controls the reticle based on the first movement information and the second movement information as in step 126 described above. While adjusting the position of at least one of the stage RST and the wafer stage WST2, the pattern of the reticle R is transferred to a plurality of shot areas on the wafer W2 by a step-and-scan method.
  • main controller 20 determines the presence of the liquid immersion area on wafer stage WST1 based on the first movement information and the second movement information in the same manner as in step 124 described above. Creates the correction information for correcting the control error of the wafer stage WST1 and considers the correction information to store the pattern of the reticle R in the multiple shot areas on the wafer W1 by the step-and-scan method.
  • the movement of at least one of the reticle stage RST and the wafer stage WST1 may be controlled.
  • main controller 20 takes into account the above-mentioned correction information, and The movement of at least one of stage RST and wafer stage WST2 may be controlled. The reason is as follows.
  • each of the acquisition device, the correction information creation device, and the control device is configured by the main control device 20. It is.
  • the same effects as those of the first embodiment can be obtained, and the first movement information of the wafer stage WST1 (or the wafer stage WST2) and the wafer A series of operations for acquiring the second movement information of stage WST2 (or wafer stage WST1) can be performed in parallel, so that the throughput can be improved.
  • the method for driving the two wafer stages described in the second embodiment is disclosed in, for example, Japanese Patent Application Laid-Open No. 2000-511704 and US Pat. No. 6,262,796 corresponding thereto.
  • the present invention can be suitably applied to a switching type twin wafer stage type exposure apparatus.
  • main controller 20 transmits the first movement information. And reticle stage RST and Ueno, stage WST1 (or By adjusting the position of at least one of the wafer stages WST2) and transferring the reticle R pattern to multiple shot areas on the wafer in a step-and-scan manner, the wafer stage caused by the presence of the liquid immersion area High-accuracy pattern transfer in which the influence of the control error is corrected becomes possible.
  • main controller 20 determines the control error of the wafer stage caused by the presence of the liquid immersion area on the wafer stage based on the first movement information and the second movement information.
  • Correction information for the correction may be created, and the movement of at least one of the reticle stage RST and the ueno or the stage may be controlled in consideration of the correction information.
  • the liquid immersion area is formed on the wafer stage!
  • each of a plurality of target trajectories expected to be used is acquired in advance and stored in the memory 21. Only the movement information in the state where the liquid immersion area is formed may be acquired.
  • the force exemplified when the present invention is applied to the local immersion type exposure apparatus is not limited to this.
  • the present invention is not limited to the wafer immersion type. It is possible to apply anyway.
  • the wafer stage WST is moved by moving the wafer stage WST in the same manner as when exposing a plurality of shot areas on one wafer W (W1, W2).
  • (1) Acquire the movement information and the second movement information, and based on the information, perform position control of at least one of the wafer stage WST and the reticle stage RST, and sequentially expose a plurality of shot areas on the wafer W.
  • First movement information and second movement information are acquired while moving the wafer stage WST in the same manner as when exposing one shot area of the wafer W, and based on the information, the wafer stage WST A plurality of shot areas on the wafer W may be sequentially exposed while controlling at least one of the positions of the reticle stage RST.
  • the first movement information and the second movement information are similarly obtained, and the respective information is averaged to obtain the averaged first and second movement information.
  • the respective information is averaged to obtain the averaged first and second movement information.
  • at least one of the wafer stage WST and reticle stage RST A plurality of shot areas on the wafer W may be sequentially exposed while performing position control.
  • the first movement information and the second movement information of wafer stage WST are measured by focusing on the exposure of wafer W, but the present invention is not limited to this.
  • the first movement information and the second movement information are acquired by operating the wafer stage WST in the same manner as when measuring using sensors on the stage and WEN, and the first movement is performed when the measurement is performed.
  • Position control of at least one of the wafer stage WST and the reticle stage RST may be performed based on the information and the second movement information.
  • the water Lq is supplied onto the wafer stage WST and the measurement operation is performed in a state
  • the water Lq is supplied to the wafer stage WST based on the first movement information and the second movement information acquired earlier.
  • at least one of the wafer stage WST and the reticle stage RST may be controlled in a state where the water Lq is supplied.
  • the exposure apparatus may include a measurement stage mounted with a measurement member / sensor and moved on the image plane side of the projection optical system.
  • the measurement stage also acquires the first movement information and the second movement information in the same manner as the stage that holds the wafer, and moves the measurement stage based on the first movement information and the second movement information.
  • An exposure apparatus equipped with a measurement stage is disclosed in, for example, Japanese Patent Application Laid-Open No. 2000-164504 and US Application No. 09Z593,800 corresponding thereto. To the extent permitted by national legislation in (state), the disclosures in the above-mentioned gazettes and the corresponding US applications are incorporated by reference into this description.
  • the light source of the exposure apparatus of each of the above embodiments is not limited to the ArF excimer laser, but may be a KrF excimer laser (output wavelength 248 nm), an F laser (output wavelength 157 nm), an Ar laser (output laser).
  • pulsed laser light source such as a Kr laser (output wavelength 146 nm), 8-wire (
  • an ultra-high pressure mercury lamp that emits bright lines such as 436 nm wavelength and i-line (365 nm wavelength).
  • a harmonic generation device of a YAG laser can be used.
  • a DFB semiconductor laser or a fiber laser oscillates a single-wavelength laser beam in the infrared or visible range, such as erbium (or both erbium and ytterbium).
  • harmonics amplified by a doped fiber amplifier and wavelength-converted to ultraviolet light using a nonlinear optical crystal may be used.
  • the projection optical system is not limited to the reduction system, but can be the same magnification and magnification system.
  • ultrapure water water
  • a liquid which is chemically stable and has a high transmittance of the illumination light IL and which is safe for example, a fluorine-based inert liquid
  • a fluorine-based inert liquid for example, Fluorinert (trade name of Threehem, USA) can be used. This fluorine-based inert liquid is also excellent in the cooling effect.
  • a liquid that has transparency to the illuminating light IL and a refractive index as high as possible and that is stable against the photoresist applied to the surface of the projection optical system wafer should be used.
  • select Fomblin oil When using the F laser as the light source, select Fomblin oil.
  • the collected liquid may be reused.
  • a filter for removing impurities from the collected liquid is provided in the liquid recovery device, the recovery pipe, or the like. It is desirable to keep.
  • the force that assumes that the optical element closest to the image plane of the projection optical system PL is the front lens 91 is not limited to a lens.
  • An optical plate parallel plane plate or the like used for adjusting the optical characteristics such as aberration (spherical aberration, coma aberration, etc.) may be used, or a simple cover glass may be used.
  • the optical element closest to the image plane of the projection optical system PL (the tip lens 91 in the above-described embodiment) is scattered particles generated from the resist by the irradiation of the illumination light IL, or adheres to impurities in the liquid, etc. In the embodiment, the surface may be stained by contact with water). For this reason, the optical element may be detachably (exchangeably) fixed to the lowermost part of the lens barrel 40, and may be periodically replaced.
  • the optical element that comes into contact with the liquid is the lens 91, the cost of the replacement part and the time required for replacement are long, and the maintenance cost (running cost) increases and This leads to a decrease in throughput. Therefore, the optical element that comes into contact with the liquid may be, for example, a parallel flat plate that is less expensive than the lens 91.
  • the exposure apparatus to which the above-described liquid immersion method is applied has a configuration in which the light path space on the exit side of the tip lens 91 of the projection optical system PL is filled with liquid (pure water) to expose the wafer W.
  • the optical path space on the incident side of the front end lens 91 of the projection optical system PL may be filled with liquid (pure water).
  • the range in which the liquid (water) flows is set so as to cover the entire projection area (irradiation area of illumination light IL) of the reticle pattern image.
  • the size of the gutter may be arbitrarily set, but in controlling the flow velocity, the flow rate, and the like, it is desirable to make the size slightly larger than the irradiation area and make the range as small as possible.
  • a type of exposure apparatus without a projection optical system for example, a proximity type exposure apparatus or a two-beam interference type exposure apparatus that exposes a wafer by forming interference fringes on the wafer is used. You can also.
  • the use of the exposure apparatus is not limited to the exposure apparatus for semiconductor manufacturing.
  • an exposure apparatus for a liquid crystal for transferring a liquid crystal display element pattern onto a square glass plate, an organic EL, a thin film magnetic head it can be widely applied to an exposure device for manufacturing an imaging device (CCD, etc.), a micromachine, a DNA chip, and the like.
  • an imaging device CCD, etc.
  • a micromachine a micromachine
  • DNA chip a DNA chip
  • glass substrates or silicon wafers are used to manufacture reticles or masks used in light exposure equipment that can be used only with micro devices such as semiconductor devices, EUV exposure equipment, X-ray exposure equipment, and electron beam exposure equipment.
  • the present invention can also be applied to an exposure apparatus that transfers a circuit pattern to a substrate.
  • FIG. 10 shows a flowchart of an example of manufacturing devices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin-film magnetic heads, micromachines, etc.).
  • step 201 design step
  • step 202 mask manufacturing step
  • step 203 wafer manufacturing step
  • a wafer is manufactured using a material such as silicon.
  • step 204 wafer processing step
  • step 205 device assembly step
  • step 205 includes steps such as a dicing step, a bonding step, and a packaging step (chip sealing) as necessary.
  • step 206 inspection step
  • inspections such as an operation confirmation test and a durability test of the device created in step 205 are performed. After these steps, the device is completed and shipped.
  • FIG. 11 shows a detailed flow example of step 204 in the semiconductor device.
  • step 211 oxidation step
  • step 212 CVD step
  • step 213 electrode formation step
  • step 214 ion implantation step
  • ions are implanted into the ueno.
  • the post-processing step is executed as follows.
  • step 215 resist forming step
  • step 216 exposure step
  • step 216 exposure step
  • step 217 development step
  • step 218 etching step
  • step 219 resist removing step
  • a device pattern is formed on a wafer through a liquid by using the exposure apparatus and the exposure method of the above embodiments. Transcribed. Therefore, high-throughput and high-precision exposure can be realized over a long period of time, and the productivity (including the yield) of a highly integrated microphone device having a fine pattern formed thereon can be improved. As a result, the effect of reducing the cost of the manufactured micro device can be expected.
  • the driving method of the present invention is suitable for driving the first stage and the second stage.
  • the exposure method and exposure apparatus of the present invention are suitable for supplying a liquid onto an object such as a wafer and exposing the object with an energy beam via the liquid.
  • the device manufacturing method of the present invention is suitable for manufacturing a micro device.

Abstract

: Un stade est déplacé de façon que la même opération cible soit effectuée lors de l'acquisition du premier lot de données (données 1) vers un stade de premier état n'ayant pas de région d'immersion de liquide formée sur le stade (phase 116) et lors de l'acquisition du second lot de données (données 3) vers un stade de second état n'ayant pas de région d'immersion de liquide formée sur le stade (phase 122). Dans ce cas, la différence entre les premier et second lots de données est une information reflétant directement la différence entre les premier et second états. Lors d'une exposition, le stade est contrôlé en considérant les données de correction calculées en fonction des données de premier poste et de deuxième poste (phase 126). De cette façon, il est possible de contrôler le stade de façon qu'aucune erreur attribuée à la présence/absence d'une région d'immersion de liquide du stade ne soit provoquée. Ainsi, il est possible d'améliorer le contrôle de position d'un corps en mouvement.
PCT/JP2005/002216 2004-02-18 2005-02-15 Méthode de conduite, méthode d'exposition, dispositif d'exposition, et méthode de fabrication du dispositif WO2005078777A1 (fr)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1624341A2 (fr) * 2004-08-05 2006-02-08 Canon Kabushiki Kaisha Appareil d'exposition à immersion liquide, méthode de contrôle et méthode de fabrication d'un dispositif
KR100849982B1 (ko) * 2006-03-13 2008-08-01 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조 방법
US20080212056A1 (en) * 2005-03-18 2008-09-04 Nikon Corporation Exposure Method, Exposure Apparatus, Method for Producing Device, and Method for Evaluating Exposure Apparatus
US8405817B2 (en) 2009-02-19 2013-03-26 Asml Netherlands B.V. Lithographic apparatus, a method of controlling the apparatus and a device manufacturing method
KR101612685B1 (ko) 2006-08-31 2016-04-26 가부시키가이샤 니콘 이동체 구동 시스템 및 이동체 구동 방법, 패턴 형성 장치 및 방법, 노광 장치 및 방법, 디바이스 제조 방법, 그리고 결정 방법
EP3147710A1 (fr) * 2006-01-19 2017-03-29 Nikon Corporation Appareil d'exposition, procédé d'exposition, et procédé de fabrication d'un dispositif

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06168866A (ja) * 1992-11-27 1994-06-14 Canon Inc 液浸式投影露光装置
JP2000058436A (ja) * 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06168866A (ja) * 1992-11-27 1994-06-14 Canon Inc 液浸式投影露光装置
JP2000058436A (ja) * 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1624341A2 (fr) * 2004-08-05 2006-02-08 Canon Kabushiki Kaisha Appareil d'exposition à immersion liquide, méthode de contrôle et méthode de fabrication d'un dispositif
EP1624341A3 (fr) * 2004-08-05 2006-11-22 Canon Kabushiki Kaisha Appareil d'exposition à immersion liquide, méthode de contrôle et méthode de fabrication d'un dispositif
US7692760B2 (en) 2004-08-05 2010-04-06 Canon Kabushiki Kaisha Liquid immersion exposure apparatus, method of controlling the same, and device manufacturing method
US20080212056A1 (en) * 2005-03-18 2008-09-04 Nikon Corporation Exposure Method, Exposure Apparatus, Method for Producing Device, and Method for Evaluating Exposure Apparatus
US8638422B2 (en) * 2005-03-18 2014-01-28 Nikon Corporation Exposure method, exposure apparatus, method for producing device, and method for evaluating exposure apparatus
EP3147710A1 (fr) * 2006-01-19 2017-03-29 Nikon Corporation Appareil d'exposition, procédé d'exposition, et procédé de fabrication d'un dispositif
KR100849982B1 (ko) * 2006-03-13 2008-08-01 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조 방법
KR101612685B1 (ko) 2006-08-31 2016-04-26 가부시키가이샤 니콘 이동체 구동 시스템 및 이동체 구동 방법, 패턴 형성 장치 및 방법, 노광 장치 및 방법, 디바이스 제조 방법, 그리고 결정 방법
US8405817B2 (en) 2009-02-19 2013-03-26 Asml Netherlands B.V. Lithographic apparatus, a method of controlling the apparatus and a device manufacturing method

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