WO2005061378A3 - Materiel et procede permettant de former une gravure inclinee personnalisee dans un substrat - Google Patents
Materiel et procede permettant de former une gravure inclinee personnalisee dans un substrat Download PDFInfo
- Publication number
- WO2005061378A3 WO2005061378A3 PCT/US2004/041864 US2004041864W WO2005061378A3 WO 2005061378 A3 WO2005061378 A3 WO 2005061378A3 US 2004041864 W US2004041864 W US 2004041864W WO 2005061378 A3 WO2005061378 A3 WO 2005061378A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- creating
- equipment
- sloped etch
- custom
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 3
- 238000005530 etching Methods 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00547—Etching processes not provided for in groups B81C1/00531 - B81C1/00539
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00396—Mask characterised by its composition, e.g. multilayer masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00412—Mask characterised by its behaviour during the etching process, e.g. soluble masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3085—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Weting (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2004/041864 WO2005061378A2 (fr) | 2003-12-18 | 2004-12-14 | Materiel et procede permettant de former une gravure inclinee personnalisee dans un substrat |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/739,314 | 2003-12-18 | ||
US10/739,521 US20050133479A1 (en) | 2003-12-19 | 2003-12-19 | Equipment and process for creating a custom sloped etch in a substrate |
PCT/US2004/041864 WO2005061378A2 (fr) | 2003-12-18 | 2004-12-14 | Materiel et procede permettant de former une gravure inclinee personnalisee dans un substrat |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005061378A2 WO2005061378A2 (fr) | 2005-07-07 |
WO2005061378A3 true WO2005061378A3 (fr) | 2005-11-10 |
Family
ID=34677628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/041864 WO2005061378A2 (fr) | 2003-12-18 | 2004-12-14 | Materiel et procede permettant de former une gravure inclinee personnalisee dans un substrat |
Country Status (2)
Country | Link |
---|---|
US (1) | US20050133479A1 (fr) |
WO (1) | WO2005061378A2 (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005029803A1 (de) * | 2005-06-27 | 2007-01-04 | Robert Bosch Gmbh | Verfahren zur Herstellung eines mikromechanischen Bauelements sowie mikromechanisches Bauelement |
US20070205473A1 (en) * | 2006-03-03 | 2007-09-06 | Honeywell International Inc. | Passive analog thermal isolation structure |
US7401515B2 (en) * | 2006-03-28 | 2008-07-22 | Honeywell International Inc. | Adaptive circuits and methods for reducing vibration or shock induced errors in inertial sensors |
US8367303B2 (en) | 2006-07-14 | 2013-02-05 | Micron Technology, Inc. | Semiconductor device fabrication and dry develop process suitable for critical dimension tunability and profile control |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
US20090111271A1 (en) * | 2007-10-26 | 2009-04-30 | Honeywell International Inc. | Isotropic silicon etch using anisotropic etchants |
US7719754B2 (en) | 2008-09-30 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | Multi-thickness layers for MEMS and mask-saving sequence for same |
EP2599136A1 (fr) | 2010-07-26 | 2013-06-05 | Fujifilm Corporation | Formation d'un dispositif présentant une membrane piézoélectrique incurvée |
KR20140005289A (ko) | 2011-02-15 | 2014-01-14 | 후지필름 디마틱스, 인크. | 마이크로-돔 어레이들을 이용한 압전 변환기들 |
US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
US9105587B2 (en) | 2012-11-08 | 2015-08-11 | Micron Technology, Inc. | Methods of forming semiconductor structures with sulfur dioxide etch chemistries |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4461672A (en) * | 1982-11-18 | 1984-07-24 | Texas Instruments, Inc. | Process for etching tapered vias in silicon dioxide |
US4938841A (en) * | 1989-10-31 | 1990-07-03 | Bell Communications Research, Inc. | Two-level lithographic mask for producing tapered depth |
US5007984A (en) * | 1987-09-28 | 1991-04-16 | Mitsubishi Denki Kabushiki Kaisha | Method for etching chromium film formed on substrate |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3839111A (en) * | 1973-08-20 | 1974-10-01 | Rca Corp | Method of etching silicon oxide to produce a tapered edge thereon |
JPS59214240A (ja) * | 1983-05-09 | 1984-12-04 | Fujitsu Ltd | 半導体装置の製造方法 |
US4902377A (en) * | 1989-05-23 | 1990-02-20 | Motorola, Inc. | Sloped contact etch process |
GB8921722D0 (en) * | 1989-09-26 | 1989-11-08 | British Telecomm | Micromechanical switch |
US5486485A (en) * | 1994-02-18 | 1996-01-23 | Philip Electronics North America Corporation | Method of manufacturing a reflective display |
US5627112A (en) * | 1995-11-13 | 1997-05-06 | Rockwell International Corporation | Method of making suspended microstructures |
US5750441A (en) * | 1996-05-20 | 1998-05-12 | Micron Technology, Inc. | Mask having a tapered profile used during the formation of a semiconductor device |
US5670062A (en) * | 1996-06-07 | 1997-09-23 | Lucent Technologies Inc. | Method for producing tapered lines |
US20020019305A1 (en) * | 1996-10-31 | 2002-02-14 | Che-Kuang Wu | Gray scale all-glass photomasks |
US5781331A (en) * | 1997-01-24 | 1998-07-14 | Roxburgh Ltd. | Optical microshutter array |
US6071652A (en) * | 1997-03-21 | 2000-06-06 | Digital Optics Corporation | Fabricating optical elements using a photoresist formed from contact printing of a gray level mask |
US6420073B1 (en) * | 1997-03-21 | 2002-07-16 | Digital Optics Corp. | Fabricating optical elements using a photoresist formed from proximity printing of a gray level mask |
US6613498B1 (en) * | 1998-09-17 | 2003-09-02 | Mems Optical Llc | Modulated exposure mask and method of using a modulated exposure mask |
US6929030B2 (en) * | 1999-06-28 | 2005-08-16 | California Institute Of Technology | Microfabricated elastomeric valve and pump systems |
SG112804A1 (en) * | 2001-05-10 | 2005-07-28 | Inst Of Microelectronics | Sloped trench etching process |
US6875695B2 (en) * | 2002-04-05 | 2005-04-05 | Mems Optical Inc. | System and method for analog replication of microdevices having a desired surface contour |
US6749997B2 (en) * | 2002-05-14 | 2004-06-15 | Sandia National Laboratories | Method for providing an arbitrary three-dimensional microstructure in silicon using an anisotropic deep etch |
-
2003
- 2003-12-19 US US10/739,521 patent/US20050133479A1/en not_active Abandoned
-
2004
- 2004-12-14 WO PCT/US2004/041864 patent/WO2005061378A2/fr active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4461672A (en) * | 1982-11-18 | 1984-07-24 | Texas Instruments, Inc. | Process for etching tapered vias in silicon dioxide |
US5007984A (en) * | 1987-09-28 | 1991-04-16 | Mitsubishi Denki Kabushiki Kaisha | Method for etching chromium film formed on substrate |
US4938841A (en) * | 1989-10-31 | 1990-07-03 | Bell Communications Research, Inc. | Two-level lithographic mask for producing tapered depth |
Non-Patent Citations (1)
Title |
---|
SPIERINGS G A C M: "REVIEW WET CHEMICAL ETCHING OF SILICATE GLASSES IN HYDROFLUORIC ACID BASED SOLUTIONS", JOURNAL OF MATERIALS SCIENCE LETTERS, CHAPMAN AND HALL LTD. LONDON, GB, vol. 12, no. 23, 1 December 1993 (1993-12-01), pages 6261 - 6273, XP000414624, ISSN: 0261-8028 * |
Also Published As
Publication number | Publication date |
---|---|
WO2005061378A2 (fr) | 2005-07-07 |
US20050133479A1 (en) | 2005-06-23 |
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