WO2005055265B1 - Idt electroded piezoelectric diaphragms - Google Patents
Idt electroded piezoelectric diaphragmsInfo
- Publication number
- WO2005055265B1 WO2005055265B1 PCT/US2004/039652 US2004039652W WO2005055265B1 WO 2005055265 B1 WO2005055265 B1 WO 2005055265B1 US 2004039652 W US2004039652 W US 2004039652W WO 2005055265 B1 WO2005055265 B1 WO 2005055265B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- diaphragm
- piezoelectric
- region
- metal layer
- Prior art date
Links
- 210000000188 Diaphragm Anatomy 0.000 title claims abstract 41
- 239000012530 fluid Substances 0.000 claims abstract 3
- 230000002572 peristaltic Effects 0.000 claims abstract 3
- 238000005086 pumping Methods 0.000 claims abstract 3
- 239000002184 metal Substances 0.000 claims 17
- 229910052751 metal Inorganic materials 0.000 claims 17
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 9
- 238000000151 deposition Methods 0.000 claims 8
- 230000001737 promoting Effects 0.000 claims 8
- 229910052681 coesite Inorganic materials 0.000 claims 7
- 229910052906 cristobalite Inorganic materials 0.000 claims 7
- 229910052904 quartz Inorganic materials 0.000 claims 7
- 239000000377 silicon dioxide Substances 0.000 claims 7
- 229910052682 stishovite Inorganic materials 0.000 claims 7
- 229910052905 tridymite Inorganic materials 0.000 claims 7
- 239000002131 composite material Substances 0.000 claims 6
- 239000000203 mixture Substances 0.000 claims 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 4
- 229910010252 TiO3 Inorganic materials 0.000 claims 3
- 229910017083 AlN Inorganic materials 0.000 claims 2
- 229910004243 O3-PbTiO3 Inorganic materials 0.000 claims 2
- 229910004293 O3—PbTiO3 Inorganic materials 0.000 claims 2
- 229910020215 Pb(Mg1/3Nb2/3)O3PbTiO3 Inorganic materials 0.000 claims 2
- 229910020294 Pb(Zr,Ti)O3 Inorganic materials 0.000 claims 2
- 229910003781 PbTiO3 Inorganic materials 0.000 claims 2
- 229910020698 PbZrO3 Inorganic materials 0.000 claims 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 238000000708 deep reactive-ion etching Methods 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 238000001020 plasma etching Methods 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N AI2O3 Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 claims 1
- 238000000206 photolithography Methods 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
Abstract
The disclosed invention relates to achieving micromachined piezoelectrically-actuated diaphragms. The piezoelectric diaphragm includes a central, inactive3 electrode free region (1) and an annular shaped interdigitated electrode adjacent to the outer periphery (2) of the central region (1). The diaphragm also may have an inactive annular, electrode free region (2) and an active central, interdigitated electrode region (1). The diaphragms may be used in, such as, miniature pumps. The pumps may include a plurality of chambers to generate peristaltic pumping of fluids.
Claims
1. A piezoelectric diaphragm having an improved deflection in response to an applied voltage, the diaphragm comprising a substrate having a piezoelectric or antiferroelectric layer, the layer having an upper surface and a lower surface; and an annular region bordering a central region on the upper surface of the layer, wherein the annular region is in an active state when the central region is in an inactive state and the annular region is in an inactive state when the central region is in an active state, wherein the active state is present in the annular region, when an interdigitated electrode is present in the annular region or the active state is present in the central region when an interdigitated electrode is present in the central region, the interdigitated electrode comprising a composite metal layer that includes an adhesion promoting metal layer in contact with the piezoelectric layer or the antiferroelectric layer and a highly conductive metal layer in contact with the adhesion promoting metal layer, and wherein when the annular region is in an inactive state the annular region is free of the composite metal layer, and wherein when the central region is in an inactive state the central region is free of the composite metal layer.
2. The piezoelectric diaphragm of claim 1 wherein the piezoelectric layer is selected from the group consisting of Pb(Zr,Ti)O3, PbZrO3, PbTiO3, Pb(Mg1/3Nb2/3)O3- PbTiO3,, Pb(Yb1/2Nb1/2)O3-PbTiO3, ZnO, AlN or combinations thereof.
3. The piezoelectric diaphragm of claim 1 wherein the piezoelectric layer is Pb Zr0.52Ti0.40O3.
4. The piezoelectric diaphragm of claim 1 wherein the adhesion promoting layer is selected from the group consisting of Cr, Ti, W and combinations thereof.
5. The piezoelectric diaphragm of claim 1 wherein the highly conductive metal layer is selected from the group consisting of Au, Pt and combinations thereof.
6. The piezoelectric diaphragm of claim 3 wherein the adhesion promoting layer is Cr.
7. The piezoelectric diaphragm of claim 6 wherein the highly conductive metal layer is Au.
8. The piezoelectric diaphragm of claim 3 further comprising a layer of ZrO2 in contact with the bottom surface of the Pb0.52 Zr0.48TiO3.
9. The piezoelectric diaphragm of claim 8 further comprising a layer of SiO2 in contact with the layer of ZrO2.
10. The piezoelectric diaphragm of claim 9 further comprising a layer of Al2O3 in contact with the layer of SiO2,
11. The piezoelectric diaphragm of claim 1 wherein the interdigitated electrode region includes electrodes which have a width of about 1 micron to about 20 microns and a spacing between adjacent electrodes of about 1 microns to about 20 microns.
12. A piezoelectric diaphragm having an improved deflection in response to an applied voltage, the diaphragm comprising a substrate having a piezoelectric layer, the layer having an upper surface and a lower surfacey and an annular region bordering a central region on the upper surface of the layer, wherein tho annular region is in an active state when the central region is in an inactive state and the annular region is in an inactive state when the central region is in an active state, wherein the active state is present in the annular region when an interdigitated electrode is present in the annular region or is present in the central region when an interdigitated electrode is present in the central region, the interdigitated electrode comprising a composite metal layer that includes an adhesion promoting metal layer in contact with the piezoelectric layer and a highly conductive metal layer in contact with the adhesion promoting layer, and wherein when the annular a region is in an inactive state the annular region else is free of the composite metal layer, and wherein when the central region is in an inactive state the central region is free of the composite metal layer.
13. The diaphragm of claim 12 wherein the piezoelectric layer is selected from the group consisting of Pb(Zr,Ti)O3, PbZrO3, PbTiO3, Pb(Mg1/3Nb2/3)O3-PbTiO3, Pb(Yb1/2Nb1/2)O3-PbTiO3, ZnO, AlN or combinations thereof.
14. The diaphragm of claim 12 wherein the piezoelectric layer is Pb0.52 Zr0.48TiO3
15. The diaphragm of claim 12 wherein the adhesion promoting layer is selected from the group consisting of Cr, Ti, W and combinations thereof.
16. The diaphragm of claim 12 wherein the highly conductive metal layer is selected from the group consisting of Au, Pt and combinations thereof.
17. The diaphragm of claim 14 wherein the adhesion promoting layer is Cr.
18. The piezoelectric diaphragm of claim 17 wherein the highly conductive metal layer is Au.
19. The piezoelectric diaphragm of claim 14 further comprising a layer of ZrO2 in contact with the bottom surface of the Pb0.52 Zr0.48TiO3
20. The piezoelectric diaphragm of claim 19 further comprising a layer of SiO2 in contact with the layer of ZrO2.
21. The piezoelectric diaphragm of claim 12 wherein the interdigitated electrode region having electrodes which have a width of about 1 micron to about 20 microns and a spacing between adjacent electrodes of about 1 microns to about 20 microns,
22. A pump for peristaltic pumping of fluids comprising, a substrate having a plurality of cavities and one or more interconnections between the cavities, each of the cavities bearing a diaphragm for displacement from its original shape to a deflected shape within the cavity in response to electrical voltage so as to displace any fluid present in the cavity and which upon termination of the voltage the diaphragm returns to its original configuration, whereby sequential actuation of the diaphragms on one or more chambers of the pump generates peristaltic pumping wherein the diaphragm is a piezoelectric diaphragm according to any of claims 1-21.
23. A method of making an interdigitated piezoelectric diaphragm comprising, depositing a layer of SiO2 on a Si substrate, depositing a layer of ZrO2 over the layer of SiO2, depositing a layer of Pb(Zr0.52Ti0.48)O3 over the layer of ZrO3 depositing a Pt layer on top of the layer of Pb(Zr0.52Ti0.40)O3, reactive ion etching the layer of Pt to produce an interdigitated annular electrode and a central, inactive electrode free region that is free of Pt, applying a pattern to the bottom surface of the substrate by photolithography to define a region that defines the diameter of the diaphragm and applying deep reactive ion etching to the region to release the diaphragm.
24. A method of making an interdigitaled piezoelectric diaphragm comprising, depositing a layer of SiO2 on a Si substrate, depositing a layer of ZrO2 over the layer of SiO2, depositing a layer of a piezoelectric material over the layer of ZrO2 depositing a highly conductive metal layer on top of the layer of piezoelectric material, reactive ion etching the metal layer to produce an interdigitated annular electrode and a central, inactive electrode free region that is free of Pt, applying a pattern to the bottom surface of the substrate to define a region that defines the diameter of the diaphragm and applying deep reactive ion etching to the region to release the diaphragm.
25. The piezoelectric diaphragm of claim 1 wherein the substrate is silicon.
20. The piezoelectric diaphragm of claim 12 wherein the substrate is silicon.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP04812216A EP1851853A4 (en) | 2003-11-26 | 2004-11-26 | Idt electroded piezoelectric diaphragms |
| CA002558834A CA2558834A1 (en) | 2003-11-26 | 2004-11-26 | Idt electroded piezoelectric diaphragms |
| JP2006541736A JP2007529113A (en) | 2003-11-26 | 2004-11-26 | Piezoelectric diaphragm with IDT electrode |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US52563203P | 2003-11-26 | 2003-11-26 | |
| US60/525,632 | 2003-11-26 | ||
| US10/996,604 | 2004-11-26 | ||
| US10/996,604 US7378782B2 (en) | 2003-11-26 | 2004-11-26 | IDT electroded piezoelectric diaphragms |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| WO2005055265A2 WO2005055265A2 (en) | 2005-06-16 |
| WO2005055265A3 WO2005055265A3 (en) | 2006-02-09 |
| WO2005055265B1 true WO2005055265B1 (en) | 2006-03-30 |
Family
ID=34657190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2004/039652 WO2005055265A2 (en) | 2003-11-26 | 2004-11-26 | Idt electroded piezoelectric diaphragms |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7378782B2 (en) |
| EP (1) | EP1851853A4 (en) |
| JP (1) | JP2007529113A (en) |
| CA (1) | CA2558834A1 (en) |
| WO (1) | WO2005055265A2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8183745B2 (en) * | 2006-05-08 | 2012-05-22 | The Penn State Research Foundation | High frequency ultrasound transducers |
| CN102666107B (en) | 2009-10-30 | 2015-03-11 | 惠普发展公司，有限责任合伙企业 | Piezoelectric actuator having embedded electrodes |
| WO2012002965A1 (en) | 2010-06-30 | 2012-01-05 | Hewlett-Packard Development Company, L.P. | Piezoelectric mechanism having electrodes within thin film sheet that are substantially perpendicular to substrate |
| DE102013105557B4 (en) * | 2013-05-29 | 2015-06-11 | Michael Förg | Piezoelectric actuator |
| CN104763620B (en) * | 2014-10-31 | 2016-01-27 | 浙江大学 | Flexible wiggle pump |
| EP3121875A1 (en) * | 2015-07-20 | 2017-01-25 | Centre National De La Recherche Scientifique | Method for manufacturing a miniaturized electrochemical cell and a miniaturized electrochemical cell |
| WO2023105565A1 (en) * | 2021-12-06 | 2023-06-15 | 日本電信電話株式会社 | Micro diaphragm pump |
| CN116083848A (en) * | 2022-09-30 | 2023-05-09 | 西安电子科技大学 | Double-layer film material, preparation method thereof and ferroelectric memory |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4453242A (en) * | 1982-07-13 | 1984-06-05 | Rca Corporation | Surface acoustic wave cutterhead for disc recording having a circular transducer |
| CA1267216C (en) * | 1984-07-06 | 1990-03-27 | Piezoelectric device | |
| JP2754648B2 (en) | 1989-01-13 | 1998-05-20 | 耕司 戸田 | Ultrasonic transducer and acoustic imaging device using the transducer |
| US5466932A (en) * | 1993-09-22 | 1995-11-14 | Westinghouse Electric Corp. | Micro-miniature piezoelectric diaphragm pump for the low pressure pumping of gases |
| US5386115A (en) * | 1993-09-22 | 1995-01-31 | Westinghouse Electric Corporation | Solid state micro-machined mass spectrograph universal gas detection sensor |
| DE69714909T2 (en) * | 1996-05-27 | 2003-04-30 | Ngk Insulators Ltd | Piezoelectric element of the thin film type |
| JPH11349379A (en) | 1998-04-08 | 1999-12-21 | Tokin Corp | Piezoelectric ceramic material |
| US6661162B1 (en) * | 1998-07-24 | 2003-12-09 | Seiko Epson Corporation | Piezoelectric resonator and method of producing the same |
| JP3545269B2 (en) * | 1998-09-04 | 2004-07-21 | 日本碍子株式会社 | Mass sensor and mass detection method |
| JP3517876B2 (en) * | 1998-10-14 | 2004-04-12 | セイコーエプソン株式会社 | Ferroelectric thin film element manufacturing method, ink jet recording head, and ink jet printer |
| US6323580B1 (en) * | 1999-04-28 | 2001-11-27 | The Charles Stark Draper Laboratory, Inc. | Ferroic transducer |
| JP2003530750A (en) * | 2000-04-06 | 2003-10-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Tunable filter configuration with resonator |
| JP4296710B2 (en) * | 2000-12-13 | 2009-07-15 | コニカミノルタビジネステクノロジーズ株式会社 | Diffraction element |
| US6597084B2 (en) * | 2001-01-05 | 2003-07-22 | The Hong Kong Polytechnic University | Ring-shaped piezoelectric transformer having an inner and outer electrode |
| JP2003087080A (en) * | 2001-07-06 | 2003-03-20 | Murata Mfg Co Ltd | Surface acoustic wave element and manufacturing method therefor |
| AU2003218120A1 (en) * | 2002-03-15 | 2003-09-29 | United States Of America As Represented By The Administrator Of The National Aeronautics And Space | Electro-active device using radial electric field piezo-diaphragm for sonic applications |
| WO2003079409A2 (en) * | 2002-03-15 | 2003-09-25 | United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Electro-active device using radial electric field piezo-diaphragm for control of fluid movement |
| JP4064208B2 (en) * | 2002-10-31 | 2008-03-19 | アルプス電気株式会社 | Surface acoustic wave device and manufacturing method thereof |
| JP4279271B2 (en) * | 2005-06-01 | 2009-06-17 | アルプス電気株式会社 | Surface acoustic wave device and manufacturing method thereof |
-
2004
- 2004-11-26 JP JP2006541736A patent/JP2007529113A/en active Pending
- 2004-11-26 WO PCT/US2004/039652 patent/WO2005055265A2/en active Application Filing
- 2004-11-26 CA CA002558834A patent/CA2558834A1/en not_active Abandoned
- 2004-11-26 US US10/996,604 patent/US7378782B2/en active Active
- 2004-11-26 EP EP04812216A patent/EP1851853A4/en not_active Withdrawn
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