WO2005052978A2 - Method and apparatus for modifying object with electrons generated from cold cathode electron emitter - Google Patents
Method and apparatus for modifying object with electrons generated from cold cathode electron emitter Download PDFInfo
- Publication number
- WO2005052978A2 WO2005052978A2 PCT/JP2004/017969 JP2004017969W WO2005052978A2 WO 2005052978 A2 WO2005052978 A2 WO 2005052978A2 JP 2004017969 W JP2004017969 W JP 2004017969W WO 2005052978 A2 WO2005052978 A2 WO 2005052978A2
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- WO
- WIPO (PCT)
- Prior art keywords
- electrons
- electrode
- emitter
- set forth
- voltage
- Prior art date
Links
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Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
- G21K5/04—Irradiation devices with beam-forming means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
Definitions
- a concern of the present invention is to provide a method of efficiently and uniformly modifying an object with electrons even when the object has a relatively wide surface area to be modified. That is, the method of the present invention comprises the steps of providing a cold-cathode electron emitter, which has the capability of emitting electrons from a planar electron emitting portion according to tunnel effect, applying a voltage to the emitter to emit the electrons from the planar electron emitting portion, and exposing the object to the emitted electrons.
- an energy of the electrons used to modify the object is selected from a range of 1 eV to 50 keV, and preferably 1 ⁇ 100 eV.
- a further concern of the present invention is to provide an apparatus for efficiently and uniformly modifying an object with electrons. That is, this apparatus comprises a cold-cathode electron emitter, which has the capability of emitting electrons from a planar electron emitting portion according to tunnel effect, voltage applying unit for applying a voltage to the emitter to emit the electrons from the planar electron emitting portion, and a case for accommodating the emitter therein. The case has an opening, through which the electrons or a gas activated by the electrons are provided.
- the cold-cathode electron emitter which comprises a pair of first and second electrodes, and a strong field drift layer including nanocrystalline silicon disposed between the first and second electrodes.
- the above apparatus further comprises an accelerating electrode positioned in face-to-face relation with the planar electron emitting portion to accelerate the electrons. In this case, it is possible to control the energy of electrons irradiated to the object.
- FIG. 8 is a schematic cross-sectional view of an apparatus according to a further modification of the first embodiment
- FIG. 10 is a schematic cross-sectional view of an apparatus for modifying an object with electrons according to a second embodiment of the present invention.
- FIG. 11 is a schematic cross-sectional view of an apparatus according to a first modification of the second embodiment
- FIG. 12 is a schematic cross-sectional view of an apparatus according to a second modification of the second embodiment
- FIG. 13 is a schematic cross-sectional view of an apparatus according to a third modification of the second embodiment
- FIG. 15 is a schematic cross-sectional view of an apparatus for rnodifying a gas object with electrons according to a third embodiment of the present invention.
- FIG. 19 is a schematic cross- sectional view showing a method of modifying an object with electrons according to a fifth embodiment of the present invention.
- the nanocrystalline composite layer By supplying a constant electric current having a current density of 12 mA/cm 2 between the anode and cathode electrodes for a predetermined time period, e.g., 10 seconds, while irradiating light from a 500 W tungsten lamp, the nanocrystalline composite layer can be obtained.
- amorphous silicon may be formed at regions other than the silicon grains 100 and the fine grains of nanocrystalline silicon 120.
- the amorphous silicon regions may be formed by fine pores.
- the nanocrystalline composite layer has a porous structure.
- an oxidizing process is performed to the nanocrystalline composite layer to obtain the strong field drift layer 12.
- the cold cathode electron emitter can be driven by a pulse voltage because a rise time needed to emit the electrons is shorter than the electron emitting source for emitting thermal electrons such as hot filament. Therefore, there is an advantage of saving power consumption. (4) Since no device for scanning the electron beam is needed in the present invention, a reduction in cost of the apparatus can be achieved.
- a pair of cold-cathode electron emitters 1, each of which is the cold- cathode electron emitter explained above, are disposed such that electrons are emitted in opposite two directions through a pair of openings 21 formed in the case 20.
- the second electrodes 17 of the pair of cold-cathode electron emitters are respectively connected to opposite surfaces of the insulating substrate 16, as shown in FIG. 7A
- the ohmic electrodes 15 of the pair of cold-cathode electron emitters are composed of a common electrode disposed between strong field drift layers 12, as shown in FIG. 7B
- electrons are emitted in opposite two directions by applying a voltage between the common electrode 15 and the first electrodes 11 of the cold-cathode electron emitters. Therefore, it is possible to simplify the voltage applying unit by reducing the number of electrodes.
- the modifying apparatus of this embodiment is characterized by comprising a case 20 having a gas inlet 22 for supplying the object gas into the case, and an opening 21 for providing a modified gas to the outside, and an acceleration electrode (anode electrode) 50 disposed in a face-to-face manner with an electron emitting portion 10 of a cold cathode electron emitter 1 in the case.
- the cold cathode electron emitter is the same as the emitter used in the first embodiment. Therefore, duplicate explanation is omitted.
- negative ions can be readily generated by supplying the dry gas containing an element having positive electron affinity or a large electron affinity such as oxygen in the case 20 through the gas inlet 21.
- an acceleration voltage Vc of several volts to several ten volts between the acceleration electrode 50 and the first electrode 11.
- the generated negative ions provided through the opening 21 are bonded with molecules in the outside air to generate various sorts of ions.
- a voltage of several ten volts to several mega volts, which is larger than the ionization energy (for example, several ten electron volts) of the dry gas is applied between the acceleration electrode 50 and the first electrode 11, positive ions can be generated.
- an auxiliary electrode (not shown) is placed outside of the case 20 in front of the opening 21 to control the amounts of ions ejected therefrom.
- an electric potential of the auxiliary electrode is determined to be higher than the electric potential of the first electrode 11 of the cold cathode electron emitter 1.
- a pair of auxiliary electrodes may be disposed in the case 20 such that one of the auxiliary electrodes 55 is positioned adjacent to the cold cathode electron emitter 1 and at the side of the opening 21, and the other auxiliary electrode 56 is positioned adjacent to the acceleration electrode 50 at the side of the opening.
- the gas supplied in the case 20 through the gas inlet 22 is a gas composed of atoms or molecules having a smaller electron affinity than oxygen.
- a gas comprises helium, argon, xenon, and nitrogen.
- the electron emitted from the cold cathode electron emitter 1 can be efficiently provided to the gas flowing in the gas flow channel 70 .
- the number of electrons having a sufficient energy for achieving the purpose of the modifying treatment may decrease, or variations in energy distribution of the electrons may increase because of interference of the electrons emitted from the cold cathode electron emitter with atoms and molecules in the air.
- the rnodifying apparatus of this embodiment is suitable to efficiently perform the modifying treatment to the object having regions, which the irradiation of electrons is not needed.
- the modifying apparatus further comprises a first selector for selecting at least one of the first electrode strips XI to X8, and a second selector for selecting at least one of the second electrode strips Yl to Y8, and a controller for controlling the voltage applying unit in response to outputs of the first and second selectors.
- the apparatus explained in each of the above embodiments can be regarded as the minimum unit in the case of constructing a high performance modifying apparatus, which has the capability of providing a further improved treatment efficiency.
- a high performance apparatus can be obtained by forming a two- or three-dimensional array of a plurality of rnodifying apparatuses, each of which is substantially the same as the apparatus of any one of the above embodiments, such that object is exposed to larger amounts of electrons provided from different directions.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2004800263872A CN1849673B (en) | 2003-11-25 | 2004-11-25 | Method and apparatus for modifying object with electrons generated from cold cathode electron emitter |
US10/572,748 US7898160B2 (en) | 2003-11-25 | 2004-11-25 | Method and apparatus for modifying object with electrons generated from cold cathode electron emitter |
EP04799906A EP1690264A2 (en) | 2003-11-25 | 2004-11-25 | Method and apparatus for modifying object with electrons generated from cold cathode electron emitter |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003-394655 | 2003-11-25 | ||
JP2003-394653 | 2003-11-25 | ||
JP2003394653 | 2003-11-25 | ||
JP2003394655A JP4442203B2 (en) | 2003-11-25 | 2003-11-25 | Electron beam emitter |
JP2004-128856 | 2004-04-23 | ||
JP2004128824A JP4834960B2 (en) | 2004-04-23 | 2004-04-23 | Electron source application equipment |
JP2004128856A JP4483395B2 (en) | 2004-04-23 | 2004-04-23 | Ion generator |
JP2004-128824 | 2004-04-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005052978A2 true WO2005052978A2 (en) | 2005-06-09 |
WO2005052978A3 WO2005052978A3 (en) | 2005-11-24 |
Family
ID=34637270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/017969 WO2005052978A2 (en) | 2003-11-25 | 2004-11-25 | Method and apparatus for modifying object with electrons generated from cold cathode electron emitter |
Country Status (3)
Country | Link |
---|---|
US (1) | US7898160B2 (en) |
EP (1) | EP1690264A2 (en) |
WO (1) | WO2005052978A2 (en) |
Cited By (3)
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EP2100814A1 (en) * | 2006-12-28 | 2009-09-16 | Shibuya Kogyo Co., Ltd | Container sterilization apparatus |
CN107149307A (en) * | 2017-05-12 | 2017-09-12 | 苏州安飞荣工业科技有限公司 | A kind of intelligent shoe cabinet |
CN107325969A (en) * | 2017-09-04 | 2017-11-07 | 华北理工大学 | Pollen liquid sprouts device |
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JP2007051996A (en) * | 2005-08-19 | 2007-03-01 | Ngk Insulators Ltd | Electron beam irradiation device |
US20070188090A1 (en) * | 2006-02-15 | 2007-08-16 | Matsushita Toshiba Picture Display Co., Ltd. | Field-emission electron source apparatus |
US7825591B2 (en) * | 2006-02-15 | 2010-11-02 | Panasonic Corporation | Mesh structure and field-emission electron source apparatus using the same |
JP4303308B2 (en) * | 2007-11-20 | 2009-07-29 | シャープ株式会社 | Electron-emitting device, electron-emitting device, self-luminous device, image display device, air blower, cooling device, charging device, image forming device, electron beam curing device, and method for manufacturing electron-emitting device |
JP4314307B1 (en) * | 2008-02-21 | 2009-08-12 | シャープ株式会社 | Heat exchanger |
US8299700B2 (en) | 2009-02-05 | 2012-10-30 | Sharp Kabushiki Kaisha | Electron emitting element having an electron acceleration layer, electron emitting device, light emitting device, image display device, cooling device, and charging device |
CN101814405B (en) | 2009-02-24 | 2012-04-25 | 夏普株式会社 | Electron emitting element, method for producing electron emitting element and each device using the same |
JP4732534B2 (en) | 2009-05-19 | 2011-07-27 | シャープ株式会社 | Electron emitting element, electron emitting device, charging device, image forming device, electron beam curing device, self-luminous device, image display device, blower, cooling device |
JP4777448B2 (en) | 2009-05-19 | 2011-09-21 | シャープ株式会社 | Electron emitting device, electron emitting device, self-luminous device, image display device, blower device, cooling device, charging device, image forming device, and electron beam curing device |
JP4932873B2 (en) | 2009-05-19 | 2012-05-16 | シャープ株式会社 | Self-light-emitting element, self-light-emitting device, image display device, self-light-emitting element driving method, and method of manufacturing self-light-emitting element |
JP4732533B2 (en) | 2009-05-19 | 2011-07-27 | シャープ株式会社 | Electron-emitting device and manufacturing method thereof, and electron-emitting device, charging device, image forming device, electron beam curing device, self-luminous device, image display device, blower, and cooling device |
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JP4927152B2 (en) * | 2009-11-09 | 2012-05-09 | シャープ株式会社 | Heat exchanger |
JP4880740B2 (en) * | 2009-12-01 | 2012-02-22 | シャープ株式会社 | Electron-emitting device and manufacturing method thereof, and electron-emitting device, charging device, image forming device, electron beam curing device, self-luminous device, image display device, blower, and cooling device |
US20150056095A1 (en) * | 2012-04-12 | 2015-02-26 | Electronworks Holdings Llc | Low energy electron sterilization |
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EP2100814A4 (en) * | 2006-12-28 | 2013-11-20 | Shibuya Kogyo Co Ltd | Container sterilization apparatus |
CN107149307A (en) * | 2017-05-12 | 2017-09-12 | 苏州安飞荣工业科技有限公司 | A kind of intelligent shoe cabinet |
CN107325969A (en) * | 2017-09-04 | 2017-11-07 | 华北理工大学 | Pollen liquid sprouts device |
CN107325969B (en) * | 2017-09-04 | 2020-12-01 | 华北理工大学 | Pollen liquid germination device |
Also Published As
Publication number | Publication date |
---|---|
EP1690264A2 (en) | 2006-08-16 |
WO2005052978A3 (en) | 2005-11-24 |
US20060290291A1 (en) | 2006-12-28 |
US7898160B2 (en) | 2011-03-01 |
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