WO2005045938A3 - Transistor a effet de champ a grille isolee - Google Patents

Transistor a effet de champ a grille isolee Download PDF

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Publication number
WO2005045938A3
WO2005045938A3 PCT/IB2004/052346 IB2004052346W WO2005045938A3 WO 2005045938 A3 WO2005045938 A3 WO 2005045938A3 IB 2004052346 W IB2004052346 W IB 2004052346W WO 2005045938 A3 WO2005045938 A3 WO 2005045938A3
Authority
WO
WIPO (PCT)
Prior art keywords
region
effect transistor
insulated gate
gate field
drift
Prior art date
Application number
PCT/IB2004/052346
Other languages
English (en)
Other versions
WO2005045938A2 (fr
Inventor
Steven T Peake
Philip Rutter
Original Assignee
Koninkl Philips Electronics Nv
Steven T Peake
Philip Rutter
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Steven T Peake, Philip Rutter filed Critical Koninkl Philips Electronics Nv
Publication of WO2005045938A2 publication Critical patent/WO2005045938A2/fr
Publication of WO2005045938A3 publication Critical patent/WO2005045938A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7825—Lateral DMOS transistors, i.e. LDMOS transistors with trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

Ce transistor comporte un substrat semi-conducteur (2) isolant ou semi-isolant, une région de source (8), une région de corps (6), une région de migration (4) et une région de drain (10). Des tranchées à plaques de champ isolées (20) contenant des plaques de champ (24) s'étendent longitudinalement et de chaque côté de la région de migration (4). Dans certains modes de réalisation, les tranchées (20) et les régions de migration (4) alternent latéralement. Les plaques de champ (24) sont reliées à la source uniquement.
PCT/IB2004/052346 2003-11-11 2004-11-09 Transistor a effet de champ a grille isolee WO2005045938A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0326237A GB0326237D0 (en) 2003-11-11 2003-11-11 Insulated gate field effect transistor
GB0326237.5 2003-11-11

Publications (2)

Publication Number Publication Date
WO2005045938A2 WO2005045938A2 (fr) 2005-05-19
WO2005045938A3 true WO2005045938A3 (fr) 2005-08-25

Family

ID=29726305

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2004/052346 WO2005045938A2 (fr) 2003-11-11 2004-11-09 Transistor a effet de champ a grille isolee

Country Status (2)

Country Link
GB (1) GB0326237D0 (fr)
WO (1) WO2005045938A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005041321B4 (de) * 2005-08-31 2012-03-01 Infineon Technologies Ag Grabenstrukturhalbleitereinrichtungen
US9041003B2 (en) * 2011-10-11 2015-05-26 Massachusetts Institute Of Technology Semiconductor devices having a recessed electrode structure
US9449968B2 (en) * 2013-12-27 2016-09-20 Infineon Technologies Austria Ag Method for manufacturing a semiconductor device and a semiconductor device
US9806147B2 (en) * 2014-01-27 2017-10-31 Renesas Electronics Corporation Semiconductor device
DE102015112414A1 (de) 2015-07-29 2017-02-02 Infineon Technologies Ag Verfahren zum herstellen einer halbleiterstruktur und halbleitervorrichtung
DE102015112427B4 (de) 2015-07-29 2017-04-06 Infineon Technologies Ag Halbleitervorrichtung mit einer allmählich zunehmenden Felddielektrikumsschicht und Verfahren zum Herstellen einer Halbleitervorrichtung
CN105810739A (zh) * 2016-03-18 2016-07-27 电子科技大学 一种横向soi功率ldmos
CN109216439B (zh) * 2017-07-03 2020-11-13 无锡华润上华科技有限公司 具有沟槽内渐变厚度的场板结构的半导体器件的制造方法
DE102017130213B4 (de) * 2017-12-15 2021-10-21 Infineon Technologies Ag Planarer feldeffekttransistor
DE102017130223B4 (de) 2017-12-15 2020-06-04 Infineon Technologies Ag Halbleitervorrichtung mit elektrisch parallel geschalteten planaren Feldeffekttransistorzellen und zugehöriger DC-DC-Wandler
DE102018109950B4 (de) * 2018-04-25 2022-09-29 Infineon Technologies Ag Transistorbauelement
CN113690299B (zh) * 2020-05-18 2024-02-09 华润微电子（重庆）有限公司 沟槽栅vdmos器件及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01140773A (ja) * 1987-11-27 1989-06-01 Hitachi Ltd 絶縁ゲート形トランジスタ
US20030047792A1 (en) * 2001-09-07 2003-03-13 Power Integrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01140773A (ja) * 1987-11-27 1989-06-01 Hitachi Ltd 絶縁ゲート形トランジスタ
US20030047792A1 (en) * 2001-09-07 2003-03-13 Power Integrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 013, no. 396 (E - 815) 4 September 1989 (1989-09-04) *

Also Published As

Publication number Publication date
WO2005045938A2 (fr) 2005-05-19
GB0326237D0 (en) 2003-12-17

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