WO2005034181A3 - Method for monitoring status of system components - Google Patents
Method for monitoring status of system components Download PDFInfo
- Publication number
- WO2005034181A3 WO2005034181A3 PCT/US2004/028802 US2004028802W WO2005034181A3 WO 2005034181 A3 WO2005034181 A3 WO 2005034181A3 US 2004028802 W US2004028802 W US 2004028802W WO 2005034181 A3 WO2005034181 A3 WO 2005034181A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- system component
- light
- chamber
- monitoring status
- monitoring
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/59—Transmissivity
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Plasma & Fusion (AREA)
- Engineering & Computer Science (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006533874A JP4861183B2 (en) | 2003-09-30 | 2004-09-21 | Method for monitoring the status of system components |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/673,513 US8460945B2 (en) | 2003-09-30 | 2003-09-30 | Method for monitoring status of system components |
US10/673,513 | 2003-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005034181A2 WO2005034181A2 (en) | 2005-04-14 |
WO2005034181A3 true WO2005034181A3 (en) | 2006-03-23 |
Family
ID=34376625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/028802 WO2005034181A2 (en) | 2003-09-30 | 2004-09-21 | Method for monitoring status of system components |
Country Status (3)
Country | Link |
---|---|
US (1) | US8460945B2 (en) |
JP (1) | JP4861183B2 (en) |
WO (1) | WO2005034181A2 (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006339253A (en) * | 2005-05-31 | 2006-12-14 | Toshiba Corp | Plasma processing device and method |
DE102005031602A1 (en) * | 2005-07-06 | 2007-01-11 | Robert Bosch Gmbh | A reactor for carrying out an etching process for a stack of masked wafers and etching processes |
CN101473211A (en) * | 2006-07-03 | 2009-07-01 | 和舰科技(苏州)有限公司 | Optical detection method for plasma treatment degree of silicon oxynitride film |
JP2008153365A (en) * | 2006-12-15 | 2008-07-03 | Renesas Technology Corp | Method for manufacturing semiconductor device |
JP5071856B2 (en) * | 2007-03-12 | 2012-11-14 | 日本碍子株式会社 | Yttrium oxide material and member for semiconductor manufacturing equipment |
US7833924B2 (en) * | 2007-03-12 | 2010-11-16 | Ngk Insulators, Ltd. | Yttrium oxide-containing material, component of semiconductor manufacturing equipment, and method of producing yttrium oxide-containing material |
JP2009263764A (en) * | 2008-04-01 | 2009-11-12 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
DE102009042103B4 (en) * | 2009-09-21 | 2013-01-31 | Innovent E.V. | Method of treating a surface |
EP2390905A1 (en) * | 2010-05-26 | 2011-11-30 | Applied Materials, Inc. | Thin film monitoring device and method |
TW201200628A (en) | 2010-06-29 | 2012-01-01 | Hon Hai Prec Ind Co Ltd | Coating apparatus |
CN102312219A (en) * | 2010-06-30 | 2012-01-11 | 鸿富锦精密工业(深圳)有限公司 | Coating device |
DE102011005834A1 (en) | 2011-03-21 | 2012-06-14 | Innovent E.V. | Monitoring plasma or flame at atmospheric pressure, comprises measuring optical emission of plasma or flame by spectrometer and determining based on characteristics of plasma or flame, and using intensity-calibrated spectrometer |
US9347132B2 (en) | 2011-04-29 | 2016-05-24 | Applied Materials, Inc. | Optical endpoint detection system |
DE102011051226A1 (en) * | 2011-06-21 | 2012-12-27 | Q-Cells Se | Plasma-assisted deposition for depositing dielectric layer on silicon-containing substrate, useful for manufacturing a solar cell, comprises e.g. supplying a gas, monitoring an emission intensity of gas, and controlling a process parameter |
CN103811291B (en) | 2013-12-20 | 2018-01-23 | 京东方科技集团股份有限公司 | A kind of array substrate manufacturing method, film layer etching antisitic defect monitoring method and equipment |
US9704761B2 (en) | 2014-09-17 | 2017-07-11 | Lam Research Corporation | Corrosion sensor retainer assembly apparatus and method for detecting corrosion |
JP6544902B2 (en) * | 2014-09-18 | 2019-07-17 | 東京エレクトロン株式会社 | Plasma processing system |
US10121655B2 (en) | 2015-11-20 | 2018-11-06 | Applied Materials, Inc. | Lateral plasma/radical source |
CN108866625B (en) * | 2018-05-31 | 2019-05-14 | 陕西师范大学 | A kind of method of the rear-earth-doped oxide monocrystalline of original position rapid synthesis |
US10818482B2 (en) * | 2018-09-27 | 2020-10-27 | Tokyo Electron Limited | Methods for stability monitoring and improvements to plasma sources for plasma processing |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6633391B1 (en) * | 2000-11-07 | 2003-10-14 | Applied Materials, Inc | Monitoring of film characteristics during plasma-based semi-conductor processing using optical emission spectroscopy |
US6806949B2 (en) * | 2002-12-31 | 2004-10-19 | Tokyo Electron Limited | Monitoring material buildup on system components by optical emission |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04186614A (en) | 1990-11-16 | 1992-07-03 | Mitsubishi Electric Corp | Chemical vapor growing apparatus |
JPH06177073A (en) | 1992-12-07 | 1994-06-24 | Nippon Ee S M Kk | Etching apparatus |
JPH09162165A (en) | 1995-12-04 | 1997-06-20 | Fujitsu Ltd | Processing system and cleaning method therefor |
US6152070A (en) * | 1996-11-18 | 2000-11-28 | Applied Materials, Inc. | Tandem process chamber |
US6129808A (en) * | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
JP2002057149A (en) | 2000-08-08 | 2002-02-22 | Tokyo Electron Ltd | Treatment device and its cleaning method |
US6603538B1 (en) * | 2000-11-21 | 2003-08-05 | Applied Materials, Inc. | Method and apparatus employing optical emission spectroscopy to detect a fault in process conditions of a semiconductor processing system |
JP3980840B2 (en) | 2001-04-25 | 2007-09-26 | 東京エレクトロン株式会社 | Vapor growth apparatus and vapor growth film forming method |
US20030005943A1 (en) * | 2001-05-04 | 2003-01-09 | Lam Research Corporation | High pressure wafer-less auto clean for etch applications |
JP3998445B2 (en) | 2001-08-31 | 2007-10-24 | 株式会社東芝 | Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, semiconductor device manufacturing system, and semiconductor manufacturing device cleaning method |
JP3899933B2 (en) | 2002-01-15 | 2007-03-28 | 東京エレクトロン株式会社 | Film forming method and film forming apparatus |
JP2003229425A (en) | 2002-02-05 | 2003-08-15 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
US6762849B1 (en) * | 2002-06-19 | 2004-07-13 | Novellus Systems, Inc. | Method for in-situ film thickness measurement and its use for in-situ control of deposited film thickness |
US6939433B2 (en) * | 2002-08-27 | 2005-09-06 | Hitachi High-Technologies Corporation | Sample processing apparatus and sample processing system |
US6894769B2 (en) * | 2002-12-31 | 2005-05-17 | Tokyo Electron Limited | Monitoring erosion of system components by optical emission |
US7479454B2 (en) * | 2003-09-30 | 2009-01-20 | Tokyo Electron Limited | Method and processing system for monitoring status of system components |
-
2003
- 2003-09-30 US US10/673,513 patent/US8460945B2/en active Active
-
2004
- 2004-09-21 JP JP2006533874A patent/JP4861183B2/en not_active Expired - Fee Related
- 2004-09-21 WO PCT/US2004/028802 patent/WO2005034181A2/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6633391B1 (en) * | 2000-11-07 | 2003-10-14 | Applied Materials, Inc | Monitoring of film characteristics during plasma-based semi-conductor processing using optical emission spectroscopy |
US6806949B2 (en) * | 2002-12-31 | 2004-10-19 | Tokyo Electron Limited | Monitoring material buildup on system components by optical emission |
Also Published As
Publication number | Publication date |
---|---|
WO2005034181A2 (en) | 2005-04-14 |
JP2007507887A (en) | 2007-03-29 |
JP4861183B2 (en) | 2012-01-25 |
US8460945B2 (en) | 2013-06-11 |
US20050068519A1 (en) | 2005-03-31 |
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