WO2005034181A3 - Method for monitoring status of system components - Google Patents

Method for monitoring status of system components Download PDF

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Publication number
WO2005034181A3
WO2005034181A3 PCT/US2004/028802 US2004028802W WO2005034181A3 WO 2005034181 A3 WO2005034181 A3 WO 2005034181A3 US 2004028802 W US2004028802 W US 2004028802W WO 2005034181 A3 WO2005034181 A3 WO 2005034181A3
Authority
WO
WIPO (PCT)
Prior art keywords
system component
light
chamber
monitoring status
monitoring
Prior art date
Application number
PCT/US2004/028802
Other languages
French (fr)
Other versions
WO2005034181A2 (en
Inventor
David L O'meara
Daniel Craig Burdett
Stephen H Cabral
Gert Leusink
John William Kostenko
Cory Wajda
Original Assignee
Tokyo Electron Ltd
David L O'meara
Daniel Craig Burdett
Stephen H Cabral
Gert Leusink
John William Kostenko
Cory Wajda
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, David L O'meara, Daniel Craig Burdett, Stephen H Cabral, Gert Leusink, John William Kostenko, Cory Wajda filed Critical Tokyo Electron Ltd
Priority to JP2006533874A priority Critical patent/JP4861183B2/en
Publication of WO2005034181A2 publication Critical patent/WO2005034181A2/en
Publication of WO2005034181A3 publication Critical patent/WO2005034181A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/59—Transmissivity

Abstract

A method and system (1) are provided for monitoring status of a system component in a process chamber of a batch type processing system. The method includes exposing a system component (40) to light from a light source (300) and monitoring interaction of the light with the system component to determine status of the system component. The method can detect light transmission and/or light reflection from a system component during a process that can include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, and a liner, and can further contain a protective coating.
PCT/US2004/028802 2003-09-30 2004-09-21 Method for monitoring status of system components WO2005034181A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006533874A JP4861183B2 (en) 2003-09-30 2004-09-21 Method for monitoring the status of system components

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/673,513 US8460945B2 (en) 2003-09-30 2003-09-30 Method for monitoring status of system components
US10/673,513 2003-09-30

Publications (2)

Publication Number Publication Date
WO2005034181A2 WO2005034181A2 (en) 2005-04-14
WO2005034181A3 true WO2005034181A3 (en) 2006-03-23

Family

ID=34376625

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/028802 WO2005034181A2 (en) 2003-09-30 2004-09-21 Method for monitoring status of system components

Country Status (3)

Country Link
US (1) US8460945B2 (en)
JP (1) JP4861183B2 (en)
WO (1) WO2005034181A2 (en)

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JP2006339253A (en) * 2005-05-31 2006-12-14 Toshiba Corp Plasma processing device and method
DE102005031602A1 (en) * 2005-07-06 2007-01-11 Robert Bosch Gmbh A reactor for carrying out an etching process for a stack of masked wafers and etching processes
WO2008009165A1 (en) * 2006-07-03 2008-01-24 He Jian Technology(Suzhou)Co.Ltd. AN OPTICAL INSPECTING METHOD OF A PLASMA PROCESSING DEGREE OF A SiON FILM
JP2008153365A (en) * 2006-12-15 2008-07-03 Renesas Technology Corp Method for manufacturing semiconductor device
JP5071856B2 (en) * 2007-03-12 2012-11-14 日本碍子株式会社 Yttrium oxide material and member for semiconductor manufacturing equipment
US7833924B2 (en) * 2007-03-12 2010-11-16 Ngk Insulators, Ltd. Yttrium oxide-containing material, component of semiconductor manufacturing equipment, and method of producing yttrium oxide-containing material
JP2009263764A (en) * 2008-04-01 2009-11-12 Hitachi Kokusai Electric Inc Semiconductor manufacturing apparatus and semiconductor device manufacturing method
DE102009042103B4 (en) * 2009-09-21 2013-01-31 Innovent E.V. Method of treating a surface
EP2390905A1 (en) * 2010-05-26 2011-11-30 Applied Materials, Inc. Thin film monitoring device and method
TW201200628A (en) 2010-06-29 2012-01-01 Hon Hai Prec Ind Co Ltd Coating apparatus
CN102312219A (en) * 2010-06-30 2012-01-11 鸿富锦精密工业（深圳）有限公司 Coating device
DE102011005834A1 (en) 2011-03-21 2012-06-14 Innovent E.V. Monitoring plasma or flame at atmospheric pressure, comprises measuring optical emission of plasma or flame by spectrometer and determining based on characteristics of plasma or flame, and using intensity-calibrated spectrometer
US9347132B2 (en) 2011-04-29 2016-05-24 Applied Materials, Inc. Optical endpoint detection system
DE102011051226A1 (en) * 2011-06-21 2012-12-27 Q-Cells Se Plasma-assisted deposition for depositing dielectric layer on silicon-containing substrate, useful for manufacturing a solar cell, comprises e.g. supplying a gas, monitoring an emission intensity of gas, and controlling a process parameter
CN103811291B (en) 2013-12-20 2018-01-23 京东方科技集团股份有限公司 A kind of array substrate manufacturing method, film layer etching antisitic defect monitoring method and equipment
US9704761B2 (en) 2014-09-17 2017-07-11 Lam Research Corporation Corrosion sensor retainer assembly apparatus and method for detecting corrosion
JP6544902B2 (en) * 2014-09-18 2019-07-17 東京エレクトロン株式会社 Plasma processing system
US10121655B2 (en) 2015-11-20 2018-11-06 Applied Materials, Inc. Lateral plasma/radical source
CN108866625B (en) * 2018-05-31 2019-05-14 陕西师范大学 A kind of method of the rear-earth-doped oxide monocrystalline of original position rapid synthesis
US10818482B2 (en) * 2018-09-27 2020-10-27 Tokyo Electron Limited Methods for stability monitoring and improvements to plasma sources for plasma processing

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US6633391B1 (en) * 2000-11-07 2003-10-14 Applied Materials, Inc Monitoring of film characteristics during plasma-based semi-conductor processing using optical emission spectroscopy
US6806949B2 (en) * 2002-12-31 2004-10-19 Tokyo Electron Limited Monitoring material buildup on system components by optical emission

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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6633391B1 (en) * 2000-11-07 2003-10-14 Applied Materials, Inc Monitoring of film characteristics during plasma-based semi-conductor processing using optical emission spectroscopy
US6806949B2 (en) * 2002-12-31 2004-10-19 Tokyo Electron Limited Monitoring material buildup on system components by optical emission

Also Published As

Publication number Publication date
JP2007507887A (en) 2007-03-29
JP4861183B2 (en) 2012-01-25
US20050068519A1 (en) 2005-03-31
WO2005034181A2 (en) 2005-04-14
US8460945B2 (en) 2013-06-11

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