WO2005029593A1 - Photovoltaic device - Google Patents

Photovoltaic device Download PDF

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Publication number
WO2005029593A1
WO2005029593A1 PCT/AU2004/001318 AU2004001318W WO2005029593A1 WO 2005029593 A1 WO2005029593 A1 WO 2005029593A1 AU 2004001318 W AU2004001318 W AU 2004001318W WO 2005029593 A1 WO2005029593 A1 WO 2005029593A1
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WO
WIPO (PCT)
Prior art keywords
photovoltaic device
carbon fibre
photovoltaic
fabric
carbon
Prior art date
Application number
PCT/AU2004/001318
Other languages
French (fr)
Inventor
Peter Holt Lacey
Original Assignee
Peter Holt Lacey
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AU2003905250A external-priority patent/AU2003905250A0/en
Application filed by Peter Holt Lacey filed Critical Peter Holt Lacey
Publication of WO2005029593A1 publication Critical patent/WO2005029593A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a photovoltaic device. More particularly, the photovoltaic device of the present invention is intended to function as a solar cell and facilitate the generation of electricity.
  • Carbon fibre has replaced glass fibre in many applications of reinforced plastic material in boats, cars and sporting equipment.
  • the advantages of carbon fibre are its light weight, high strength and electrical conductivity.
  • Woven carbon fibre fabric is also available and has the potential to replace both common and exotic materials in a range of applications from sails to sunshades.
  • Many of the applications of carbon fibre and woven carbon fibre fabric have common features of being in the open air and related to situations where electrical energy is required.
  • Many of the applications of carbon fibre and woven carbon fibre fabric have common features of being in the open air and related to situations where electrical energy is required.
  • a photovoltaic device comprising carbon fibre and a photovoltaic material, wherein at least a portion of the carbon fibre is encased by the photovoltaic material.
  • the carbon fibre may be provided in the form of a carbon fibre composite.
  • the carbon fibre composite preferably comprises carbon fibre and epoxy resin.
  • the carbon fibre is provided in the form of at least one strand, wherein the or each strand comprises a plurality of fibres.
  • Carbon fibre prepared with high carbonisation (i.e. graphitisation) temperatures is preferred. Most preferably, the temperature is greater than 2000 °C.
  • the carbon fibre has a polished surface.
  • the photovoltaic device comprises more than one layer of carbon fibre.
  • the layers of carbon fibre may have varying carbonisation temperatures.
  • the outermost layer is preferably carbon fibre prepared at the highest carbonisation temperature.
  • the photovoltaic material is amorphous silicon.
  • Amorphous silicon has many advantages as a solar cell material. For example, its high absorption coefficient enables cells to be formed from thin films, it is flexible and is able to be deposited onto curved surfaces.
  • the photovoltaic material is a silicon-carbon alloy.
  • the silicon-carbon alloy may be formed by thermal decomposition of a mixture of methane and silane gases and deposition onto a silicon surface.
  • the photovoltaic material may be provided in the form of other semiconductors known in the art including cadmium telluride, gallium arsenide, copper selenide and copper indium diselenide.
  • the thickness of the photovoltaic material is between about 0.1 ⁇ m and 5.0 ⁇ m. More preferably, the thickness of the photovoltaic material is no more than 0.5 ⁇ m.
  • the photovoltaic device may comprise a P-N diode or a P-l-N diode. Where the photovoltaic device comprises a P-N diode or a P-l-N diode, the photovoltaic device may further comprise a layer of a transparent electrically conductive material. Where the photovoltaic device further comprises a layer of a transparent electrically conductive material, the transparent electrically conductive material is preferably provided in the form of indium tin oxide.
  • the photovoltaic device comprises a P-N diode or a P-l-N diode
  • the photovoltaic device further comprises a layer of a metallic material.
  • the metallic material is preferably provided in the form of aluminium
  • the photovoltaic device comprises a Schottky diode.
  • the photovoltaic device comprises a Schottky diode
  • the junction between the carbon fibre and the photovoltaic material forms the diode.
  • the photovoltaic device comprises a Schottky diode
  • the photovoltaic device preferably does not comprise any layers of indium tin oxide or of aluminium
  • the photovoltaic device comprises at least two electrical contacts.
  • the electrical contacts may be applied to the device by methods known in the art including evaporating or screen printing metal onto the device.
  • the photovoltaic device further comprises a non- electrically conductive protective coating, wherein the carbon fibre and the photovoltaic material are at least partially encased by the non-electrically conductive protective coating.
  • the non-electrically conductive protective coating is preferably substantially waterproof and substantially non-permeable to air and substantially transparent to photons.
  • the electrically conductive protective coating is provided in the form of an epoxy resin.
  • a method for producing a photovoltaic device comprising the steps of: depositing amorphous silicon onto a substrate of carbon fibre.
  • the method of the present invention may further comprise the step of: polishing the carbon fibre before the step of depositing the amorphous silicon onto the substrate of carbon fibre.
  • a photovoltaic device comprising carbon fibre and a photovoltaic material, wherein the photovoltaic device provided in the form of a fabric.
  • the fabric is provided in the form of a carbon fibre fabric, wherein the carbon fibre fabric comprises a plurality of carbon fibre strands woven into a fabric and at least a portion of the carbon fibre fabric is encased by the photovoltaic material.
  • the fabric comprises a plurality of carbon fibre strands, wherein at least a portion of the carbon fibre strands are encased by the photovoltaic material and the carbon fibre strands are woven into a fabric.
  • the fabric may comprise a plurality of photovoltaic devices, interspersed with an inert material thereby producing regions of photovoltaic activity interposed between which are inert regions.
  • the inert material may be knitted or woven together with the photovoltaic devices, or may be joined thereto by other means.
  • the fabric is provided with strips comprising photovoltaic devices alternated with strips of inert material.
  • the fabric comprises squares comprising photovoltaic devices arranged with squares of inert material in a checkerboard pattern.
  • Interposing inert material between the photovoltaic devices takes advantage of the principle that a number of small cells will produce more power than a single large cell of the same area.
  • the fabric is adapted to be connected to electrodes to facilitate the removal of generated electricity.
  • the fabric is flexible and able to expand and contract in response to wind and temperature fluctuations.
  • the fabric can be used as a sail for water, land or air vehicles, shade cloth or any form of covering or protection where the generation of electricity may be considered beneficial.
  • a method for producing a photovoltaic fabric comprising the steps of: depositing amorphous silicon onto a carbon fibre fabric.
  • the method of the present invention may further comprise the step of: polishing the carbon fibre fabric before the step of depositing the amorphous silicon onto the carbon fibre fabric.
  • a method for producing a photovoltaic fabric comprising the steps of: depositing amorphous silicon onto a plurality of carbon fibre strands; and weaving the carbon fibre strands into a fabric.
  • the method of the present invention may further comprise the step of: polishing the carbon fibres before the step of depositing the amorphous silicon onto the carbon fibres.
  • the method of the present invention may further comprise the step of: applying a non-electrically conductive protective coating to the carbon fibres before the step of weaving the carbon fibre strands into a fabric.
  • the non-electrically conductive protective coating both insulates the carbon fibres and facilitates the step of weaving the carbon fibre strands into a fabric.
  • Figure 1 is a cross sectional view of a photovoltaic device in accordance with the present invention
  • Figure 2 is a cross sectional view of a fabric prepared from a number of the photovoltaic devices of the present invention.
  • Figure 3 depicts a current/voltage curve of a sample of amorphous silicon deposited onto carbon fibre.
  • FIG. 1 there is shown a photovoltaic device 10 comprising an inner layer of carbon fibre 12, a middle layer of amorphous silicon 14 and an outer layer of epoxy resin 16.
  • FIG 2 there is shown a fabric 18 comprising a plurality of photovoltaic devices 10 woven together.
  • photons of light 20 are absorbed by the amorphous silicon 14 generating movement of electrons. This movement of charge constitutes the flow of electric current and can be picked up by wires 22 attached to the carbon fibre 12.
  • Standard thin film deposition techniques may be used for the deposition of amorphous silicon, but only Plasma Enhanced Chemical Vapour Deposition (PECVD) and Hot Wire Deposition (HWD) produce photovoltaic device quality material. Both of these techniques allow for the incorporation of 10 - 15 % hydrogen in the film which is needed to reduce the number of dangling bonds and improve the electrical properties.
  • PECVD Plasma Enhanced Chemical Vapour Deposition
  • HWD Hot Wire Deposition
  • silane SiH 4
  • phosphine PH 4
  • Amorphous silicon was deposited onto a sample of carbon fibre using PECVD under the following conditions:
  • FIG 3 there is shown a current/voltage curve of a sample of amorphous silicon deposited onto carbon fibre. Standard current/voltage tests were conducted at a number of different positions on the sample. As can be seen, the material exhibits a photovoltaic effect.
  • carbon fibres and carbon fibre composites with high thermal stability provide better surfaces for adherence of amorphous silicon.
  • outgassing can occur during silicon deposition resulting in buckling and fracture of the silicon film which can lead to short circuits in the device.

Abstract

A photovoltaic device comprising carbon fibre and a photovoltaic material, wherein at least a portion of the carbon fibre is encased by the photovoltaic material.

Description

"Photovoltaic Device"
Field of the Invention
The present invention relates to a photovoltaic device. More particularly, the photovoltaic device of the present invention is intended to function as a solar cell and facilitate the generation of electricity.
Background Art
Carbon fibre has replaced glass fibre in many applications of reinforced plastic material in boats, cars and sporting equipment. The advantages of carbon fibre are its light weight, high strength and electrical conductivity. Woven carbon fibre fabric is also available and has the potential to replace both common and exotic materials in a range of applications from sails to sunshades. Many of the applications of carbon fibre and woven carbon fibre fabric have common features of being in the open air and related to situations where electrical energy is required. Many of the applications of carbon fibre and woven carbon fibre fabric have common features of being in the open air and related to situations where electrical energy is required.
It is known to prepare surfaces covered in photovoltaic material to generate and conduct electricity. For example, materials such as steel, glass, ceramics and plastic have been covered. However, they suffer from the following problems. Glass and ceramic surfaces shatter under stress, steel, whilst somewhat flexible and able to be made in sheets, is prone to rusting, whilst plastic is known to degrade in light, rendering it an unsuitable surface to apply photovoltaic material. It would be an advantage in the art to provide a flexible surface that is able to conduct electricity.
It would be an advantage in the art to provide a fibre with the properties of carbon fibre with photoelectric properties. It would also be an advantage in the art to provide a fabric which has the physical properties of carbon fibre and can generate photoelectricity. The preceding discussion of the background art is intended to facilitate an understanding of the present invention only. It should be appreciated that the discussion is not an acknowledgement or admission that any of the material referred to was part of the common general knowledge in Australia ' as at the priority date of the application.
Throughout the specification, unless the context requires otherwise, the word "comprise" or variations such as "comprises" or "comprising", will be understood to imply the inclusion of a stated integer or group of integers but not the exclusion of any other integer or group of integers.
Disclosure of the Invention
In accordance with the present invention, there is provided a photovoltaic device comprising carbon fibre and a photovoltaic material, wherein at least a portion of the carbon fibre is encased by the photovoltaic material.
The carbon fibre may be provided in the form of a carbon fibre composite. Where the carbon fibre is provided in the form of a carbon fibre composite, the carbon fibre composite preferably comprises carbon fibre and epoxy resin.
Preferably, the carbon fibre is provided in the form of at least one strand, wherein the or each strand comprises a plurality of fibres.
Carbon fibre prepared with high carbonisation (i.e. graphitisation) temperatures is preferred. Most preferably, the temperature is greater than 2000 °C.
Preferably, the carbon fibre has a polished surface.
In one form of the invention, the photovoltaic device comprises more than one layer of carbon fibre. Where the photovoltaic devices comprises more than one layer of carbon fibre, the layers of carbon fibre may have varying carbonisation temperatures. Where the carbon fibre comprises more than one layer of carbon fibre of varying qualities, the outermost layer is preferably carbon fibre prepared at the highest carbonisation temperature.
In one form of the invention, the photovoltaic material is amorphous silicon. Amorphous silicon has many advantages as a solar cell material. For example, its high absorption coefficient enables cells to be formed from thin films, it is flexible and is able to be deposited onto curved surfaces.
In a second form of the invention, the photovoltaic material is a silicon-carbon alloy. In a specific form of the invention, the silicon-carbon alloy may be formed by thermal decomposition of a mixture of methane and silane gases and deposition onto a silicon surface.
Alternatively, the photovoltaic material may be provided in the form of other semiconductors known in the art including cadmium telluride, gallium arsenide, copper selenide and copper indium diselenide.
Preferably, the thickness of the photovoltaic material is between about 0.1 μm and 5.0 μm. More preferably, the thickness of the photovoltaic material is no more than 0.5 μm.
The photovoltaic device may comprise a P-N diode or a P-l-N diode. Where the photovoltaic device comprises a P-N diode or a P-l-N diode, the photovoltaic device may further comprise a layer of a transparent electrically conductive material. Where the photovoltaic device further comprises a layer of a transparent electrically conductive material, the transparent electrically conductive material is preferably provided in the form of indium tin oxide.
Where the photovoltaic device comprises a P-N diode or a P-l-N diode, the photovoltaic device further comprises a layer of a metallic material. Where the photovoltaic device further comprises a layer of a metallic material, the metallic material is preferably provided in the form of aluminium In yet another alternate form of the invention, the photovoltaic device comprises a Schottky diode. Where the photovoltaic device comprises a Schottky diode, the junction between the carbon fibre and the photovoltaic material forms the diode. Where the photovoltaic device comprises a Schottky diode, the photovoltaic device preferably does not comprise any layers of indium tin oxide or of aluminium
In one form of the invention, the photovoltaic device comprises at least two electrical contacts. The electrical contacts may be applied to the device by methods known in the art including evaporating or screen printing metal onto the device.
In one form of the invention, the photovoltaic device further comprises a non- electrically conductive protective coating, wherein the carbon fibre and the photovoltaic material are at least partially encased by the non-electrically conductive protective coating. The non-electrically conductive protective coating is preferably substantially waterproof and substantially non-permeable to air and substantially transparent to photons. In one form of the invention, the electrically conductive protective coating is provided in the form of an epoxy resin.
In accordance with the present invention there is provided a method for producing a photovoltaic device, the method comprising the steps of: depositing amorphous silicon onto a substrate of carbon fibre.
The method of the present invention may further comprise the step of: polishing the carbon fibre before the step of depositing the amorphous silicon onto the substrate of carbon fibre.
In accordance with the present invention, there is further provided a photovoltaic device comprising carbon fibre and a photovoltaic material, wherein the photovoltaic device provided in the form of a fabric. In one form of the invention, the fabric is provided in the form of a carbon fibre fabric, wherein the carbon fibre fabric comprises a plurality of carbon fibre strands woven into a fabric and at least a portion of the carbon fibre fabric is encased by the photovoltaic material.
In a second form of the invention, the fabric comprises a plurality of carbon fibre strands, wherein at least a portion of the carbon fibre strands are encased by the photovoltaic material and the carbon fibre strands are woven into a fabric.
The fabric may comprise a plurality of photovoltaic devices, interspersed with an inert material thereby producing regions of photovoltaic activity interposed between which are inert regions. The inert material may be knitted or woven together with the photovoltaic devices, or may be joined thereto by other means. In an alternate form of the invention, the fabric is provided with strips comprising photovoltaic devices alternated with strips of inert material. In another alternate form of the invention, the fabric comprises squares comprising photovoltaic devices arranged with squares of inert material in a checkerboard pattern.
Interposing inert material between the photovoltaic devices takes advantage of the principle that a number of small cells will produce more power than a single large cell of the same area.
The fabric is adapted to be connected to electrodes to facilitate the removal of generated electricity.
Preferably, the fabric is flexible and able to expand and contract in response to wind and temperature fluctuations.
Preferably, the fabric can be used as a sail for water, land or air vehicles, shade cloth or any form of covering or protection where the generation of electricity may be considered beneficial.
In accordance with the present invention there is provided a method for producing a photovoltaic fabric, the method comprising the steps of: depositing amorphous silicon onto a carbon fibre fabric.
The method of the present invention may further comprise the step of: polishing the carbon fibre fabric before the step of depositing the amorphous silicon onto the carbon fibre fabric.
In accordance with the present invention there is provided a method for producing a photovoltaic fabric, the method comprising the steps of: depositing amorphous silicon onto a plurality of carbon fibre strands; and weaving the carbon fibre strands into a fabric.
The method of the present invention may further comprise the step of: polishing the carbon fibres before the step of depositing the amorphous silicon onto the carbon fibres.
The method of the present invention may further comprise the step of: applying a non-electrically conductive protective coating to the carbon fibres before the step of weaving the carbon fibre strands into a fabric.
Advantageously, the non-electrically conductive protective coating both insulates the carbon fibres and facilitates the step of weaving the carbon fibre strands into a fabric.
Brief Description of the Drawings
The present invention will now be described, by way of example only, with reference to one embodiment thereof and the accompanying drawing, in which:-
Figure 1 is a cross sectional view of a photovoltaic device in accordance with the present invention; Figure 2 is a cross sectional view of a fabric prepared from a number of the photovoltaic devices of the present invention; and
Figure 3 depicts a current/voltage curve of a sample of amorphous silicon deposited onto carbon fibre.
Best Mode(s) for Carrying Out the Invention
In Figure 1 , there is shown a photovoltaic device 10 comprising an inner layer of carbon fibre 12, a middle layer of amorphous silicon 14 and an outer layer of epoxy resin 16.
In Figure 2, there is shown a fabric 18 comprising a plurality of photovoltaic devices 10 woven together.
In use, photons of light 20 are absorbed by the amorphous silicon 14 generating movement of electrons. This movement of charge constitutes the flow of electric current and can be picked up by wires 22 attached to the carbon fibre 12.
Standard thin film deposition techniques may be used for the deposition of amorphous silicon, but only Plasma Enhanced Chemical Vapour Deposition (PECVD) and Hot Wire Deposition (HWD) produce photovoltaic device quality material. Both of these techniques allow for the incorporation of 10 - 15 % hydrogen in the film which is needed to reduce the number of dangling bonds and improve the electrical properties.
In PECVD, constantly flowing silane (SiH4) at low pressure is decomposed in a radio-frequency discharge. The radicals interact with the heated substrate surface and silicon is deposited while most of the hydrogen is desorbed. The amount remaining can be controlled to some extent by the plasma conditions and the substrate temperature. By the addition of diborane (B2H6) or phosphine (PH4) to the silane, the material may be doped wither p-type or n-type respectively. Amorphous silicon was deposited onto a sample of carbon fibre using PECVD under the following conditions:
Feed gases - silane, hydrogen, diborane 1 % in argon, phosphine 1 % in argon, methane, ammonia. Frequency - RF 14.7 MHz Pressure - 0.5 torr Flow rate - 100 seem Power- 2 W Deposition rate - 400 nmhr"1 Substrate temperature - 200 °C
In Figure 3, there is shown a current/voltage curve of a sample of amorphous silicon deposited onto carbon fibre. Standard current/voltage tests were conducted at a number of different positions on the sample. As can be seen, the material exhibits a photovoltaic effect.
Without being limited by theory, it is believed that carbon fibres and carbon fibre composites with high thermal stability provide better surfaces for adherence of amorphous silicon. With samples of lower thermal stability, outgassing can occur during silicon deposition resulting in buckling and fracture of the silicon film which can lead to short circuits in the device.
Modifications and variations such as would be apparent to the skilled addressee are considered to be within the scope of the present invention.

Claims

Claims
1. A photovoltaic device comprising carbon fibre and a photovoltaic material, wherein at least a portion of the carbon fibre is encased by the photovoltaic material.
2. A photovoltaic device according to claim 1 , wherein the carbon fibre is provided in the form of a carbon fibre composite.
3. A photovoltaic device according to claim 2, wherein the carbon fibre composite comprises carbon fibre and epoxy resin.
4. A photovoltaic device according to any one of the preceding claims, wherein the carbon fibre is provided in the form of at least one strand, wherein the or each strand comprises a plurality of fibres.
5. A photovoltaic device according to any one of the preceding claims, wherein the carbon fibre has been carbonised at temperatures greater than 2000 °C.
6. A photovoltaic device according to any one of the preceding claims, wherein the carbon fibre has a polished surface.
7. A photovoltaic device according to any one of the preceding claims, wherein the photovoltaic device comprises more than one layer of carbon fibre.
8. A photovoltaic device according to claim 7, wherein the outermost layer is carbon fibre prepared at the highest carbonisation temperature.
9. A photovoltaic device according to any one of the preceding claims, wherein the photovoltaic material is amorphous silicon.
10. A photovoltaic device according to any one of claims 1 to 8, wherein the photovoltaic material is a silicon-carbon alloy.
11. A photovoltaic device according to claim 10, wherein the silicon-carbon alloy may is formed by thermal decomposition of a mixture of methane and silane gases and deposition onto the silicon surface.
12. A photovoltaic device according to any one of the preceding claims, wherein the photovoltaic material is provided in the form of cadmium telluride, gallium arsenide, copper selenide or copper indium diselenide.
13. A photovoltaic device according to any one of the preceding claims, wherein the thickness of the photovoltaic material is between about 0.1 μm and 5.0 μm.
14. A photovoltaic device according to any one claims 1 to 12, wherein the thickness of the photovoltaic material is no more than 0.5 μm.
15. A photovoltaic device according to any one of the preceding claims, wherein the photovoltaic device comprises a P-N diode or a P-l-N diode.
16. A photovoltaic device according to claim 15, wherein the photovoltaic device further comprises a layer of a transparent electrically conductive material.
17. A photovoltaic device according to claim 16, wherein the transparent electrically conductive material is provided in the form of indium tin oxide.
18. A photovoltaic device according to any one claims 15 to 17, wherein the photovoltaic device further comprises a layer of a metallic material.
19. A photovoltaic device according to claim 18, wherein the metallic material is provided in the form of aluminium
20. A photovoltaic device according to any one claims 1 to 14, wherein the photovoltaic device comprises a Schottky diode.
21. A photovoltaic device according to claim 20, wherein the junction between the carbon fibre and the photovoltaic material forms the Schottky diode.
22. A photovoltaic device according to claim 20 or claim 21 , wherein the photovoltaic device preferably does not comprise any layers of indium tin oxide or of aluminium
23. A photovoltaic device according to any one of the preceding claims, wherein the photovoltaic device comprises at least two electrical contacts.
24. A photovoltaic device according to claim 23, wherein the electrical contact is applied to the device by methods known in the art including evaporating or screen printing metal onto the device.
25. A photovoltaic device according to any one of the preceding claims, wherein the photovoltaic device further comprises a non-electrically conductive protective coating, wherein the carbon fibre and the photovoltaic material are encased by the non-electrically conductive protective coating.
26. A photovoltaic device according to claim 25, wherein the non-electrically conductive protective coating is substantially waterproof and substantially non- permeable to air and substantially transparent to photons.
27. A photovoltaic device according to claim 25 or claim 26, wherein the electrically conductive protective coating is provided in the form of an epoxy resin.
28. A method for producing a photovoltaic device, the method comprising the steps of: depositing amorphous silicon onto a substrate of carbon fibre.
29. A method for producing a photovoltaic device according to claim 28, the , method further comprising the step of: polishing the carbon fibre before the step of depositing the amorphous silicon onto the substrate of carbon fibre.
30. A photovoltaic device comprising carbon fibre and a photovoltaic material, wherein the photovoltaic device provided in the form of a fabric.
31. A photovoltaic device according to claim 30, wherein the fabric is provided in the form of a carbon fibre fabric, wherein the carbon fibre fabric comprises a plurality of carbon fibre strands woven into a fabric and at least a portion of the carbon fibre fabric is encased by the photovoltaic material.
32. A photovoltaic device according to claim 30, wherein the fabric comprises a plurality of carbon fibre strands, wherein at least a portion of the carbon fibre strands are encased by the photovoltaic material and the carbon fibre strands are woven into a fabric.
33. A photovoltaic device according to any one of claims 30 to 32, wherein the fabric comprises a plurality of photovoltaic devices, interspersed with an inert material thereby producing regions of photovoltaic activity interposed between which are inert regions.
34. A photovoltaic device according to claim 33, wherein the inert material is knitted or woven together with the photovoltaic devices, or joined thereto by other means.
35. A photovoltaic device according to any one of claims 30 to 32, wherein the fabric is provided with strips comprising photovoltaic devices alternated with strips of inert material.
36. A photovoltaic device according to any one of claims 30 to 32, wherein the fabric comprises squares comprising photovoltaic devices arranged with squares of inert material in a checkerboard pattern.
37. A photovoltaic device according to any one of claims 30 to 36, wherein the fabric is flexible and able to expand and contract in response to wind and temperature fluctuations.
38. A photovoltaic device according to any one of claims 30 to 37, wherein the fabric can be used as a sail for water, land or air vehicles, shade cloth or any form of covering or protection where the generation of electricity may be considered beneficial.
39. A method for producing a photovoltaic device, the method comprising the steps of: depositing amorphous silicon onto a carbon fibre fabric.
40. A method for producing a photovoltaic device according to claim 39, the method further comprising the step of: polishing the carbon fibre fabric before the step of depositing the amorphous silicon onto the carbon fibre fabric.
41. A method for producing a photovoltaic device, the method comprising the steps of: depositing amorphous silicon onto a plurality of carbon fibre strands; and weaving the carbon fibre strands into a fabric.
42. A method for producing a photovoltaic device according to claim 41 , the method further comprising the step of: polishing the carbon fibres before the step of depositing the amorphous silicon onto the carbon fibres.
43. A method for producing a photovoltaic device according to claim 41 or claim 42, the method further comprising the step of: applying a non-electrically conductive protective coating to the carbon fibres before the step of weaving the carbon fibre strands into a fabric.
4. A photovoltaic device substantially as hereinbefore described with reference to any one of the accompanying Figures.
PCT/AU2004/001318 2003-09-25 2004-09-24 Photovoltaic device WO2005029593A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
AU2003905250 2003-09-25
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