WO2005029538A3 - A plasma generating apparatus and an alignment process for liquid crystal displays using the apparatus - Google Patents

A plasma generating apparatus and an alignment process for liquid crystal displays using the apparatus Download PDF

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Publication number
WO2005029538A3
WO2005029538A3 PCT/KR2004/002408 KR2004002408W WO2005029538A3 WO 2005029538 A3 WO2005029538 A3 WO 2005029538A3 KR 2004002408 W KR2004002408 W KR 2004002408W WO 2005029538 A3 WO2005029538 A3 WO 2005029538A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
generating apparatus
liquid crystal
plasma generating
directivity
Prior art date
Application number
PCT/KR2004/002408
Other languages
French (fr)
Other versions
WO2005029538A2 (en
Inventor
Seok Kyun Song
Original Assignee
Seok Kyun Song
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020030065599A external-priority patent/KR20050029354A/en
Priority claimed from KR1020040044688A external-priority patent/KR100606451B1/en
Application filed by Seok Kyun Song filed Critical Seok Kyun Song
Publication of WO2005029538A2 publication Critical patent/WO2005029538A2/en
Publication of WO2005029538A3 publication Critical patent/WO2005029538A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
    • G02F1/133723—Polyimide, polyamide-imide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Liquid Crystal (AREA)
  • Plasma Technology (AREA)

Abstract

The present invention relates to a plasma generating apparatus and a method of forming an alignment film of a liquid crystal display using the plasma generating apparatus. A high voltage is applied to the main electrode to generate a high non-regular electric field having directivity. Thus, the main electrode generates plasma of a high density having directivity. In this time, plasma is oriented toward a substrate at a proper angle and generates plasma having directivity. Large-area low temperature plasma can be generated through a simple structure, and a flat panel and roll to roll 3-D sample processing condition can be satisfied. Thus, surface reforming and cleaning of any material such as metal, semicondcutor, plastic and ceramics regardless of the type of a sample can be easily made. It is thus possible to effectively form an alignment film of a liquid crystal display using this plasma generating apparatus.
PCT/KR2004/002408 2003-09-22 2004-09-21 A plasma generating apparatus and an alignment process for liquid crystal displays using the apparatus WO2005029538A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020030065599A KR20050029354A (en) 2003-09-22 2003-09-22 A plasma generating apparatus and an alignment process for liquid crystal displays using the apparatus
KR10-2003-0065599 2003-09-22
KR10-2004-0044688 2004-06-16
KR1020040044688A KR100606451B1 (en) 2004-06-16 2004-06-16 High pressure plasma discharge device

Publications (2)

Publication Number Publication Date
WO2005029538A2 WO2005029538A2 (en) 2005-03-31
WO2005029538A3 true WO2005029538A3 (en) 2005-06-09

Family

ID=34380476

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2004/002408 WO2005029538A2 (en) 2003-09-22 2004-09-21 A plasma generating apparatus and an alignment process for liquid crystal displays using the apparatus

Country Status (1)

Country Link
WO (1) WO2005029538A2 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995029044A1 (en) * 1994-04-25 1995-11-02 The Gillette Company Amorphous diamond coating of blades
KR19980069409A (en) * 1996-03-01 1998-10-26 가나이쯔도무 Plasma processing apparatus and plasma processing method
KR100212087B1 (en) * 1994-07-20 1999-08-02 모리시타 요이찌 Sputtering apparatus
WO2001079585A1 (en) * 2000-04-12 2001-10-25 Unaxis Balzers Aktiengesellschaft Dlc layer system and method for producing said layer system
WO2002025696A2 (en) * 2000-09-21 2002-03-28 Applied Materials, Inc. Reducing deposition of process residues on a surface in a chamber
WO2002047137A1 (en) * 2000-12-08 2002-06-13 Sony Corporation Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995029044A1 (en) * 1994-04-25 1995-11-02 The Gillette Company Amorphous diamond coating of blades
KR100212087B1 (en) * 1994-07-20 1999-08-02 모리시타 요이찌 Sputtering apparatus
KR19980069409A (en) * 1996-03-01 1998-10-26 가나이쯔도무 Plasma processing apparatus and plasma processing method
WO2001079585A1 (en) * 2000-04-12 2001-10-25 Unaxis Balzers Aktiengesellschaft Dlc layer system and method for producing said layer system
WO2002025696A2 (en) * 2000-09-21 2002-03-28 Applied Materials, Inc. Reducing deposition of process residues on a surface in a chamber
WO2002047137A1 (en) * 2000-12-08 2002-06-13 Sony Corporation Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device

Also Published As

Publication number Publication date
WO2005029538A2 (en) 2005-03-31

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