JP2003109908A5 - Plasma processing apparatus and plasma processing method - Google Patents

Description

[0001]
Field of the Invention
The present invention relates to a thin film forming process in the manufacture of a thin film transistor of a semiconductor substrate or a liquid crystal display device, relates to a plasma processing apparatus and plasma treatment how used for etching processing or surface modification treatment.

The present invention aims to provide a plasma processing apparatus and plasma processing how to enable improved and larger area of the improvement of the processing speed and processing quality.

In the above plasma treatment apparatus, it is possible partial diametral maximum length Saga electrode is less than 1/4 wavelength of the high frequency (Claim 9).

In the above plasma processing apparatus, the frequency of the high frequency can be a range of 20MHz～500MHz (claim 10).

The plasma processing method of the present invention, the application point of the end portions of the partial electrodes is an outer peripheral edge portion of the formed electrodes of a plurality of partial electrodes positioned at a Jo Tokoro gap, two positioned adjacent the phase partial electrodes you apply a different high frequency voltage (claim 11).

The plasma processing method of the present invention, the frequency of the high frequency can be in the range of 2 0MHz~500MHz (claim 13).

The Rukoto plasma treatment is performed by one of plasma processing method above SL, it is possible to obtain a substrate of interest. The maximum dimension thin film is formed by any of the plasma processing method above SL is a substrate of the above 1 m, Ru can assumed film thickness distribution of the thin film is within 10%.

Semiconductors devices, Ru can be provided with any of the substrates described above.

Claims (13)

A high frequency power supply and a processing chamber for processing a substrate disposed in a substrate disposition portion, wherein high frequency power is supplied from the high frequency power supply to electrodes in the processing chamber to generate plasma, and plasma is generated on the substrate A plasma processing apparatus for performing processing,
The electrode is composed of a plurality of partial electrodes positioned with a predetermined gap,
An application point at which the high frequency power is applied to each of the partial electrodes is located at an outer peripheral end of the electrode,
A plasma processing apparatus comprising phase difference generation means in a feeding path of the high frequency power such that phases of high frequency voltages applied to the two partial electrodes positioned adjacent to each other are different. The electrode comprises four partial square partial electrodes, the square having a shape and arrangement separated and separated by an intersecting linear gap connecting centers of opposite sides,
The application points are provided one by one on the outer edge of the partial electrode, and the positions of the application points are two at a position corresponding to the first side of the square, and the second side opposite to the first side The plasma processing apparatus according to claim 1, wherein two are provided at corresponding positions.   The plasma processing apparatus according to claim 1, wherein a phase difference between the high frequency voltages is in a range of 120 to 240 degrees.   The plasma processing apparatus according to any one of claims 1 to 3, further comprising a dielectric disposed in a gap between the adjacent partial electrodes. The plasma processing apparatus according to claim 4 , wherein the dielectric protrudes to the substrate disposition side with respect to main surfaces of partial electrodes on both sides thereof.   The plasma processing apparatus according to any one of claims 1 to 5, wherein a modulation power supply for modulating the high frequency power in a pulse shape is disposed in a high frequency transmission path connecting the high frequency power supply and the partial electrode.   The substrate placement portion faces a first substrate placement portion facing a predetermined distance on one main surface side of the electrode and a predetermined distance on the other main surface side of the electrode The plasma processing apparatus in any one of Claims 1-6 comprised from a 2nd board | substrate arrangement | positioning part. The dielectric disposed between the partial electrodes protrudes from the main surface toward the first substrate installation portion on one main surface side and from the main surface on the other main surface. The plasma processing apparatus according to claim 7 , which protrudes toward the second substrate arrangement portion side. The plasma processing apparatus according to any one of claims 1 to 8, wherein the maximum length is 1/4 or less of the wavelength of the high frequency. The high frequency of the area by der of 20MHz～500MHz, plasma processing apparatus according to any one of claims 1 to 9. The application point of the end of the partial electrodes is an outer peripheral edge portion of the Ru consists electrodes of a plurality of partial electrodes positioned at a Tokoro interval constant, the phase of the two partial electrodes located adjacent different you frequency voltage to the plasma processing method.   The plasma processing method according to claim 11, wherein the plasma processing is performed on the substrate with a phase difference between high frequency voltages supplied to the two adjacent partial electrodes being in a range of 120 ° to 240 °. In the range of 2 0MHz～500MHz the frequency of the high-frequency plasma processing method according to claim 11 or 12.