WO2005010231A3 - Cvd method for the deposition of at least one iii-vn layer on a substrate - Google Patents

Cvd method for the deposition of at least one iii-vn layer on a substrate Download PDF

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Publication number
WO2005010231A3
WO2005010231A3 PCT/EP2004/051222 EP2004051222W WO2005010231A3 WO 2005010231 A3 WO2005010231 A3 WO 2005010231A3 EP 2004051222 W EP2004051222 W EP 2004051222W WO 2005010231 A3 WO2005010231 A3 WO 2005010231A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
substrate
iii
deposition
cvd method
Prior art date
Application number
PCT/EP2004/051222
Other languages
German (de)
French (fr)
Other versions
WO2005010231A2 (en
Inventor
Michael Heuken
Yilmaz Dikme
Marc Deschler
Holger Juergensen
Holger Kalisch
Rolf Jansen
Original Assignee
Aixtron Ag
Michael Heuken
Yilmaz Dikme
Marc Deschler
Holger Juergensen
Holger Kalisch
Rolf Jansen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Ag, Michael Heuken, Yilmaz Dikme, Marc Deschler, Holger Juergensen, Holger Kalisch, Rolf Jansen filed Critical Aixtron Ag
Publication of WO2005010231A2 publication Critical patent/WO2005010231A2/en
Publication of WO2005010231A3 publication Critical patent/WO2005010231A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention relates to a CVD method for the deposition of at least one III-VN layer on a substrate, or at least one III-N layer on a substrate with a composition different from that of the layer, whereby the crystallographic properties of the substrate, at least in the region of the surface for coating, are selected such that the layer or a buffer layer on which the layer is deposited can be directly precipitated thereon. Furthermore, the substrate comprises a mechanical support and a priming sheet applied thereto and said priming sheet may be separated from the support.
PCT/EP2004/051222 2003-07-24 2004-06-24 Cvd method for the deposition of at least one iii-vn layer on a substrate WO2005010231A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10334202.8 2003-07-24
DE2003134202 DE10334202A1 (en) 2003-07-24 2003-07-24 CVD method for depositing at least one III-V-N layer on a substrate

Publications (2)

Publication Number Publication Date
WO2005010231A2 WO2005010231A2 (en) 2005-02-03
WO2005010231A3 true WO2005010231A3 (en) 2005-03-10

Family

ID=34071931

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/051222 WO2005010231A2 (en) 2003-07-24 2004-06-24 Cvd method for the deposition of at least one iii-vn layer on a substrate

Country Status (2)

Country Link
DE (1) DE10334202A1 (en)
WO (1) WO2005010231A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6146457A (en) * 1997-07-03 2000-11-14 Cbl Technologies, Inc. Thermal mismatch compensation to produce free standing substrates by epitaxial deposition
WO2001082384A1 (en) * 2000-04-26 2001-11-01 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor element and method for producing the same
US20020190259A1 (en) * 2001-05-29 2002-12-19 Werner Goetz III-Nitride light emitting devices with low driving voltage
US20030033974A1 (en) * 2001-07-11 2003-02-20 Tetsuzo Ueda Layered substrates for epitaxial processing, and device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6146457A (en) * 1997-07-03 2000-11-14 Cbl Technologies, Inc. Thermal mismatch compensation to produce free standing substrates by epitaxial deposition
WO2001082384A1 (en) * 2000-04-26 2001-11-01 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor element and method for producing the same
US20020190259A1 (en) * 2001-05-29 2002-12-19 Werner Goetz III-Nitride light emitting devices with low driving voltage
US20030033974A1 (en) * 2001-07-11 2003-02-20 Tetsuzo Ueda Layered substrates for epitaxial processing, and device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
SOMEYA T ET AL: "Highly reflective <formula><roman>GaN/Al</roman><inf><roman>0.34</rom an></inf><roman>Ga</roman><inf><roman>0.66</roman></inf><roman>N</rom an></formula> quarter-wave reflectors grown by metal organic chemical vapor deposition", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 73, no. 25, 21 December 1998 (1998-12-21), pages 3653 - 3655, XP012021649, ISSN: 0003-6951 *
STECKI A J ET AL: "SIC RAPID THERMAL CARBONIZATION OF THE (111)SI SEMICONDUCTOR-ON- INSULATOR STRUCTURE AND SUBSEQUENT METALORGANIC CHEMICAL VAPOR DEPOSITION OF GAN", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 69, no. 15, 7 October 1996 (1996-10-07), pages 2264 - 2266, XP000640978, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
DE10334202A1 (en) 2005-02-17
WO2005010231A2 (en) 2005-02-03

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