WO2005010228A3 - High peak power plasma pulsed supply with arc handling - Google Patents

High peak power plasma pulsed supply with arc handling Download PDF

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Publication number
WO2005010228A3
WO2005010228A3 PCT/US2004/023402 US2004023402W WO2005010228A3 WO 2005010228 A3 WO2005010228 A3 WO 2005010228A3 US 2004023402 W US2004023402 W US 2004023402W WO 2005010228 A3 WO2005010228 A3 WO 2005010228A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
arc
storage capacitor
energy storage
peak power
Prior art date
Application number
PCT/US2004/023402
Other languages
French (fr)
Other versions
WO2005010228A2 (en
Inventor
David J Christie
Original Assignee
Advanced Energy Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Energy Ind Inc filed Critical Advanced Energy Ind Inc
Priority to EP04778755A priority Critical patent/EP1654394A2/en
Priority to JP2006521202A priority patent/JP2006528731A/en
Publication of WO2005010228A2 publication Critical patent/WO2005010228A2/en
Publication of WO2005010228A3 publication Critical patent/WO2005010228A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A magnetron sputtering system is provided comprising a pulsed DC power supply capable of delivering peak powers of 0.1 mega Watts to several megaWatts with a peak power density greater than 1kW/cm2. A sputtering plasma in a highly ionized state is created without first adopting an arc discharge state. The power supply has a pulsing circuit comprising an energy storage capacitor and serially connected inductor with a switching means for disconnecting the pulsing circuit from the plasma and recycling the inductor energy back to the energy storage capacitor at the detection of an arc condition. The energy storage capacitor and the serially connected inductor provide an impedance match to the plasma, limits the current rate of rise and peak magnitude in the event of an arc, and shapes the voltage pulses to the plasma.
PCT/US2004/023402 2002-09-25 2004-07-20 High peak power plasma pulsed supply with arc handling WO2005010228A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04778755A EP1654394A2 (en) 2003-07-24 2004-07-20 High peak power plasma pulsed supply with arc handling
JP2006521202A JP2006528731A (en) 2003-07-24 2004-07-20 High peak power plasma pulse power supply by arc handling

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/254,158 US6808607B2 (en) 2002-09-25 2002-09-25 High peak power plasma pulsed supply with arc handling
US10/626,330 2003-07-24
US10/626,330 US20040124077A1 (en) 2002-09-25 2003-07-24 High peak power plasma pulsed supply with arc handling

Publications (2)

Publication Number Publication Date
WO2005010228A2 WO2005010228A2 (en) 2005-02-03
WO2005010228A3 true WO2005010228A3 (en) 2005-12-01

Family

ID=31993275

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2003/030211 WO2004029322A1 (en) 2002-09-25 2003-09-23 High peak power plasma pulsed supply with arc handling
PCT/US2004/023402 WO2005010228A2 (en) 2002-09-25 2004-07-20 High peak power plasma pulsed supply with arc handling

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/US2003/030211 WO2004029322A1 (en) 2002-09-25 2003-09-23 High peak power plasma pulsed supply with arc handling

Country Status (6)

Country Link
US (2) US6808607B2 (en)
EP (1) EP1543175B1 (en)
JP (1) JP4578242B2 (en)
CN (1) CN100467662C (en)
TW (1) TW200409826A (en)
WO (2) WO2004029322A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
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US8435389B2 (en) 2006-12-12 2013-05-07 Oc Oerlikon Balzers Ag RF substrate bias with high power impulse magnetron sputtering (HIPIMS)
US9214801B2 (en) 2009-02-17 2015-12-15 Solvix Gmbh Power supply device for plasma processing

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US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
US6896773B2 (en) * 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
US6967305B2 (en) * 2003-08-18 2005-11-22 Mks Instruments, Inc. Control of plasma transitions in sputter processing systems
US9123508B2 (en) * 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
US7663319B2 (en) * 2004-02-22 2010-02-16 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US20060066248A1 (en) * 2004-09-24 2006-03-30 Zond, Inc. Apparatus for generating high current electrical discharges
US7095179B2 (en) * 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US7105075B2 (en) * 2004-07-02 2006-09-12 Advanced Energy Industries, Inc. DC power supply utilizing real time estimation of dynamic impedance
KR100628215B1 (en) * 2004-12-24 2006-09-26 동부일렉트로닉스 주식회사 method for forming metal line of semiconductor device
US7305311B2 (en) * 2005-04-22 2007-12-04 Advanced Energy Industries, Inc. Arc detection and handling in radio frequency power applications
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US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8435389B2 (en) 2006-12-12 2013-05-07 Oc Oerlikon Balzers Ag RF substrate bias with high power impulse magnetron sputtering (HIPIMS)
US9214801B2 (en) 2009-02-17 2015-12-15 Solvix Gmbh Power supply device for plasma processing

Also Published As

Publication number Publication date
CN100467662C (en) 2009-03-11
CN1688737A (en) 2005-10-26
JP4578242B2 (en) 2010-11-10
TW200409826A (en) 2004-06-16
EP1543175B1 (en) 2013-05-08
WO2004029322A1 (en) 2004-04-08
US20040055881A1 (en) 2004-03-25
EP1543175A4 (en) 2007-07-04
JP2006500473A (en) 2006-01-05
US6808607B2 (en) 2004-10-26
WO2005010228A2 (en) 2005-02-03
EP1543175A1 (en) 2005-06-22
US20040124077A1 (en) 2004-07-01

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