AU6608400A - High pulse rate pulse power system with fast rise time and low leakage current - Google Patents

High pulse rate pulse power system with fast rise time and low leakage current

Info

Publication number
AU6608400A
AU6608400A AU66084/00A AU6608400A AU6608400A AU 6608400 A AU6608400 A AU 6608400A AU 66084/00 A AU66084/00 A AU 66084/00A AU 6608400 A AU6608400 A AU 6608400A AU 6608400 A AU6608400 A AU 6608400A
Authority
AU
Australia
Prior art keywords
pulse
charging
power system
leakage current
rise time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU66084/00A
Inventor
Paul C. Melcher
Richard M. Ness
William N Partlo
Daniel A. Rothweil
Brett D. Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cymer Inc
Original Assignee
Cymer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cymer Inc filed Critical Cymer Inc
Publication of AU6608400A publication Critical patent/AU6608400A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094076—Pulsed or modulated pumping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
    • H01S3/0975—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser using inductive or capacitive excitation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/80—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using non-linear magnetic devices; using non-linear dielectric devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
    • H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Lasers (AREA)
  • Generation Of Surge Voltage And Current (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)

Abstract

A high pulse rate pulse power source for supplying controlled high energy electrical pulses at rates of 2000 Hz or greater. The source includes a pulse generating circuit including a charging capacitor, a solid state switch and a current limiting inductor. Pulses generated in the pulse generating circuit are compressed in at least two pulse compression circuits and a step-up pulse transformer increases peak voltage to at least 12,000 volts. A very fast regulated power supply is provided for charging the charging capacitor in less than 400 microseconds and a pulse control system including a programmed processor controls the charging of the charging capacitor to an accuracy of less than about one percent at a rate of at least 2000 charges per second.
AU66084/00A 1999-08-09 2000-07-25 High pulse rate pulse power system with fast rise time and low leakage current Abandoned AU6608400A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09370739 1999-08-09
US09/370,739 US6151346A (en) 1997-12-15 1999-08-09 High pulse rate pulse power system with fast rise time and low current
PCT/US2000/020266 WO2001011733A1 (en) 1999-08-09 2000-07-25 High pulse rate pulse power system with fast rise time and low leakage current

Publications (1)

Publication Number Publication Date
AU6608400A true AU6608400A (en) 2001-03-05

Family

ID=23460960

Family Applications (1)

Application Number Title Priority Date Filing Date
AU66084/00A Abandoned AU6608400A (en) 1999-08-09 2000-07-25 High pulse rate pulse power system with fast rise time and low leakage current

Country Status (10)

Country Link
US (1) US6151346A (en)
EP (1) EP1224717B1 (en)
JP (1) JP3971095B2 (en)
KR (1) KR100573499B1 (en)
AT (1) ATE295010T1 (en)
AU (1) AU6608400A (en)
DE (1) DE60019953T2 (en)
HK (1) HK1048394A1 (en)
TW (1) TW463427B (en)
WO (1) WO2001011733A1 (en)

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US6700915B2 (en) 1999-03-12 2004-03-02 Lambda Physik Ag Narrow band excimer laser with a resonator containing an optical element for making wavefront corrections
US6590922B2 (en) * 1999-09-27 2003-07-08 Cymer, Inc. Injection seeded F2 laser with line selection and discrimination
US6549551B2 (en) * 1999-09-27 2003-04-15 Cymer, Inc. Injection seeded laser with precise timing control
US6801560B2 (en) * 1999-05-10 2004-10-05 Cymer, Inc. Line selected F2 two chamber laser system
US6556600B2 (en) 1999-09-27 2003-04-29 Cymer, Inc. Injection seeded F2 laser with centerline wavelength control
US6865210B2 (en) * 2001-05-03 2005-03-08 Cymer, Inc. Timing control for two-chamber gas discharge laser system
US6785316B1 (en) 1999-08-17 2004-08-31 Lambda Physik Ag Excimer or molecular laser with optimized spectral purity
WO2001055684A2 (en) 2000-01-25 2001-08-02 Lambda Physik Ag Energy monitor for molecular fluorine laser
US6493375B1 (en) 2000-02-22 2002-12-10 Tuilaser Ag Adjustable mounting unit for an optical element of a gas laser
US6522679B1 (en) * 2000-02-22 2003-02-18 Tuilaser Gas laser discharge unit
US6859482B1 (en) 2000-02-22 2005-02-22 Tuilaser Ag Modular gas laser discharge unit
US6603790B1 (en) 2000-02-22 2003-08-05 Hans Kodeda Gas laser and a dedusting unit thereof
US6480517B1 (en) 2000-02-22 2002-11-12 Tuilaser Ag Shadow device for a gas laser
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US6782029B1 (en) 2000-02-22 2004-08-24 Tuilaser Ag Dedusting unit for a laser optical element of a gas laser and method for assembling
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US6721345B2 (en) 2000-07-14 2004-04-13 Lambda Physik Ag Electrostatic precipitator corona discharge ignition voltage probe for gas status detection and control system for gas discharge lasers
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Also Published As

Publication number Publication date
EP1224717B1 (en) 2005-05-04
WO2001011733A1 (en) 2001-02-15
KR20020021168A (en) 2002-03-18
TW463427B (en) 2001-11-11
HK1048394A1 (en) 2003-03-28
DE60019953T2 (en) 2006-02-23
DE60019953D1 (en) 2005-06-09
JP2001168430A (en) 2001-06-22
KR100573499B1 (en) 2006-04-26
EP1224717A1 (en) 2002-07-24
JP3971095B2 (en) 2007-09-05
EP1224717A4 (en) 2004-03-17
WO2001011733A9 (en) 2002-09-06
US6151346A (en) 2000-11-21
ATE295010T1 (en) 2005-05-15

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase