WO2005007934A3 - Procede de production de monocristaux piezoelectriques a structure polydomaine pour dispositifs de positionnement precis - Google Patents

Procede de production de monocristaux piezoelectriques a structure polydomaine pour dispositifs de positionnement precis Download PDF

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Publication number
WO2005007934A3
WO2005007934A3 PCT/RU2004/000255 RU2004000255W WO2005007934A3 WO 2005007934 A3 WO2005007934 A3 WO 2005007934A3 RU 2004000255 W RU2004000255 W RU 2004000255W WO 2005007934 A3 WO2005007934 A3 WO 2005007934A3
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WO
WIPO (PCT)
Prior art keywords
blank
faces
accurate positioning
monocrystals
positioning devices
Prior art date
Application number
PCT/RU2004/000255
Other languages
English (en)
Russian (ru)
Other versions
WO2005007934A2 (fr
Inventor
Vladimir Valentinovich Antipov
Aleksandr Alekseevic Blistanov
Mikhail Davidovich Malinkovich
Yury Nikolaevich Parkhomenko
Original Assignee
Vladimir Valentinovich Antipov
Aleksandr Alekseevic Blistanov
Mikhail Davidovich Malinkovich
Yury Nikolaevich Parkhomenko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vladimir Valentinovich Antipov, Aleksandr Alekseevic Blistanov, Mikhail Davidovich Malinkovich, Yury Nikolaevich Parkhomenko filed Critical Vladimir Valentinovich Antipov
Publication of WO2005007934A2 publication Critical patent/WO2005007934A2/fr
Publication of WO2005007934A3 publication Critical patent/WO2005007934A3/fr

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La présente invention concerne la production de monocristaux de matériaux ferroélectriques présentant une structure à domaines formés et peut être utilisée pour créer et faire fonctionner des instruments de positionnement précis, en particulier des microscopes de sondage, lors du réglage de systèmes optiques. Cette invention permet d'utiliser les monocristaux obtenus comme piézomoteurs dans des dispositifs de positionnement précis, en particulier dans des microscopes de sondage, lors du réglage de systèmes optiques. Le procédé de production de monocristaux piézoélectriques à structure polydomaine pour dispositifs de positionnement précis consiste d'abord à former une ébauche à partir de monocristaux ferroélectriques dans lesquels seules des limites de domaine à 180° peuvent être formées. Cette ébauche comprend au moins deux faces parallèles. Les perpendiculaires à ces faces parallèles ne coïncident pas avec la direction de l'axe de polarisation spontanée. L'ébauche est ensuite déplacée vers le champs thermique d'un four depuis une zone dont la température est supérieure à la température de Curie vers une zone dont la température est inférieure à la température de Curie. Dans le même temps, un champ électrique alternatif à variation périodique est appliqué sur les faces parallèles de l'ébauche. Une fois que l'ensemble du volume de l'ébauche est refroidi à une température inférieure à la température de Curie, une structure de domaines prédéfinie se forme dans l'ébauche. Les dimensions des domaines de la structure sont définies par la vitesse de déplacement de l'ébauche et par la durée de variation de la polarité du champ électrique appliqué sur celle-ci. L'ébauche est ensuite divisée en plaques comprenant deux faces parallèles aux limites de domaine et comprenant le même nombre de domaines de polarité opposée.
PCT/RU2004/000255 2003-07-22 2004-07-05 Procede de production de monocristaux piezoelectriques a structure polydomaine pour dispositifs de positionnement precis WO2005007934A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2003122259 2003-07-22
RU2003122259/15A RU2233354C1 (ru) 2003-07-22 2003-07-22 Способ получения пьезоэлектрических монокристаллов с полидоменной структурой для устройств точного позиционирования

Publications (2)

Publication Number Publication Date
WO2005007934A2 WO2005007934A2 (fr) 2005-01-27
WO2005007934A3 true WO2005007934A3 (fr) 2005-04-14

Family

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Application Number Title Priority Date Filing Date
PCT/RU2004/000255 WO2005007934A2 (fr) 2003-07-22 2004-07-05 Procede de production de monocristaux piezoelectriques a structure polydomaine pour dispositifs de positionnement precis

Country Status (2)

Country Link
RU (1) RU2233354C1 (fr)
WO (1) WO2005007934A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2284464C2 (ru) * 2004-12-28 2006-09-27 Алексей Леонидович Максимов Устройство для прецизионных перемещений
RU2485222C1 (ru) * 2011-11-15 2013-06-20 Общество с ограниченной ответственностью "Лабфер" Способ формирования полидоменных сегнетоэлектрических монокристаллов с заряженной доменной стенкой
RU2539104C1 (ru) * 2013-07-24 2015-01-10 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Уральский федеральный университет имени первого Президента России Б.Н. Ельцина" Способ изготовления безгистерезисного актюатора с линейной пьезоэлектрической характеристикой

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519002B2 (fr) * 1973-04-28 1980-05-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519002B2 (fr) * 1973-04-28 1980-05-23

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EVLANOVA N.F. ET AL.: "Periodicheskaya domennaya struktura v kristallakh LiNbO3: Y, vyraschivaemykh metodom Chekholskogo", FIZIKA TVERDOGO TELA, vol. 42, no. 9, 2000, pages 1678 - 1681 *
NAUMOVA I.I. ET AL.: "Regulyarnaya domennaya struktura v kritalle niobata litiya: stabilizatsiya perioda", KRISTALLOGRAFIYA, vol. 48, no. 4, 2003, pages 758 - 759 *

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Publication number Publication date
RU2233354C1 (ru) 2004-07-27
WO2005007934A2 (fr) 2005-01-27
RU2003122259A (ru) 2005-01-27

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