WO2004112445A1 - Soft x-ray applying apparatus, semiconductor assembling apparatus, and inspecting instrument - Google Patents

Soft x-ray applying apparatus, semiconductor assembling apparatus, and inspecting instrument Download PDF

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Publication number
WO2004112445A1
WO2004112445A1 PCT/JP2004/008666 JP2004008666W WO2004112445A1 WO 2004112445 A1 WO2004112445 A1 WO 2004112445A1 JP 2004008666 W JP2004008666 W JP 2004008666W WO 2004112445 A1 WO2004112445 A1 WO 2004112445A1
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WO
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Prior art keywords
soft
semiconductor
ray
rays
irradiator
Prior art date
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PCT/JP2004/008666
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French (fr)
Japanese (ja)
Inventor
Masami Fujii
Hiroyuki Mizobe
Naohito Ebihara
Koetsu Sato
Mitsumasa Minobe
Keiichi ISHIWATARITO
Original Assignee
Pla-Net Corporation
Toreck Co., Ltd.
Ishiwatarito, Youko
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Application filed by Pla-Net Corporation, Toreck Co., Ltd., Ishiwatarito, Youko filed Critical Pla-Net Corporation
Publication of WO2004112445A1 publication Critical patent/WO2004112445A1/en

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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Definitions

  • the present invention relates to a soft X-ray irradiator that irradiates soft X-rays to ionize air, a semiconductor assembling apparatus using the soft X-ray irradiator, and a semiconductor inspection apparatus.
  • a soft X-ray irradiator for irradiating soft X-rays includes a soft X-ray light source unit for irradiating soft X-rays, a power supply unit including an inverter circuit for supplying power to the soft X-ray light source unit, and the like. It is provided with a control unit and the like for controlling the X-ray light source.
  • a booster that boosts the voltage supplied from the power supply unit to a high voltage to irradiate soft X-rays is incorporated together with the soft X-ray light source.
  • the soft X-ray irradiator configured as described above can ionize air when irradiated with soft X-rays toward the air. This ionized air can remove static electricity from the target object by coming into contact with the charged object.
  • This ionized air can remove static electricity from the target object by coming into contact with the charged object.
  • an integrated circuit such as a semiconductor
  • electrostatic discharge breakdown occurs, so a soft X-ray irradiator is used to remove static electricity charged in a semiconductor, a semiconductor manufacturing device, a semiconductor inspection device, and the like. (See, for example, JP-A-8-45695).
  • the conventional soft X-ray irradiator is constructed by integrating the soft X-ray light source and the booster circuit, the configuration of the soft X-ray light source unit becomes large, and the existing semiconductor assembly equipment and inspection equipment There was a problem that it was difficult to attach a soft X-ray irradiation device to the device.
  • the semiconductor is energized and the inspection is performed at the operating temperature of the semiconductor (temperature during operation)
  • the temperature of the semiconductor inspection equipment also becomes high
  • the booster circuit assembled with the soft X-ray light source there is a problem that the device is malfunctioned or damaged. Disclosure of the invention
  • a malfunction of a booster circuit even at a use environment temperature at which a semiconductor operates is provided.
  • a soft X-ray irradiator, a semiconductor assembling apparatus, and an assembling apparatus that can be used stably without causing damage or destruction are provided.
  • a soft X-ray irradiator as an example of the present invention includes a soft X-ray irradiator that irradiates soft X-rays, and a controller that supplies and controls power of the soft X-ray generator.
  • the soft X-ray generation unit and the control unit are formed separately, and a part thereof is connected by a high-voltage cable.
  • the soft X-ray generation unit and the control unit are formed separately, and the soft X-ray generation unit and the control unit are connected by a high-voltage cable.
  • the size of the X-ray generator can be reduced, and the configuration of the soft X-ray irradiator can be simplified. In particular, by reducing the size of the soft X-ray generator, it can be easily attached to various devices and irradiate soft X-rays to ionize air.
  • the soft X-ray generator of the soft X-ray irradiator of the present invention is preferably covered with a heat insulating material, but is not necessarily required.
  • a heat insulating material By covering the soft X-ray generation part with a heat insulating material, heat insulation can be effectively achieved, and even if the temperature outside the soft X-ray generation part is high, the place where the soft X-ray generation part is installed.
  • the soft X-ray generator can be protected from damage and destruction without being affected by the temperature of the soft X-ray, and can be irradiated with soft X-rays even in a high temperature environment.
  • the soft X-ray generator may be provided with a cooling means such as a cooling plate, a cooling fin, or a cooling fan to perform cooling.
  • the insulation is preferably, but not necessarily, constructed from silicone rubber.
  • silicone rubber provides effective heat insulation, preventing damage and destruction of the soft X-ray generator even when the temperature outside the soft X-ray generator is high, and in high-temperature environments. But it can irradiate soft X-rays.
  • a semiconductor assembling apparatus as another example of the present invention includes: a soft X-ray irradiator as described above; a cab for connecting a semiconductor bonding pad and a lead; and a transporting unit for transporting the assembled semiconductor.
  • a semiconductor X-ray irradiator configured to irradiate soft X-rays from the soft X-ray generator to remove static electricity charged on the semiconductor and the assembly device.
  • the soft X-ray irradiator is provided with a soft X-ray generating unit.
  • the static electricity charged on the conductor or semiconductor assembling apparatus can be easily eliminated. For this reason, it is possible to prevent electrostatic discharge damage of the semiconductor due to static electricity generated during semiconductor assembly work or semiconductor transport.
  • a wafer mounter type, a wire bonder type 1, a marking type, or the like can be used, but is not limited thereto.
  • a semiconductor inspection apparatus as still another example of the present invention includes the soft X-ray irradiation apparatus, a box-shaped chamber having a hollow portion, and a semiconductor provided inside the chamber.
  • a semiconductor inspection apparatus comprising: inspection means for performing inspection; and transport means for transporting a semiconductor, comprising: a soft X-ray generation unit of the soft X-ray irradiation device on one side surface of the chamber; The inside of the chamber is irradiated with soft X-rays to eliminate static electricity charged on the inspection means and the semiconductor.
  • a soft X-ray generation unit is provided on one side surface of a chamber provided with a semiconductor inspection unit and a transport unit inside, and the irradiation direction of the soft X-ray is configured to be in the interior of the chamber. Then, soft X-rays are radiated from the soft X-ray generator to ionize the air in the chamber, and the static electricity charged to the semiconductor, semiconductor inspection means, semiconductor transport means, etc. inside the chamber is discharged, and the semiconductor Electrostatic discharge destruction can be prevented.
  • a prober type, a handler type, a scanner type, or the like can be used as an inspection device, but is not limited thereto.
  • FIG. 1 is a perspective view showing a configuration of a soft X-ray irradiation device.
  • FIG. 2 is an enlarged view showing the soft X-ray generator shown in FIG.
  • FIG. 3 (a) is a plan view showing an operation panel of the control unit shown in FIG.
  • FIG. 3 (b) is a plan view showing a power distribution panel of the control unit shown in FIG.
  • FIG. 4 is a perspective view showing a configuration of a wire bonder in a semiconductor assembling apparatus.
  • FIG. 5 (a) is a perspective view showing a semiconductor.
  • FIG. 5 (b) is a perspective view showing a substrate having leads for mounting the semiconductor shown in FIG. 5 (a).
  • FIG. 6 (a) is a perspective view showing a state where a semiconductor is mounted on a substrate.
  • FIG. 6 (b) is a perspective view showing a state where the semiconductor and the lead are connected.
  • FIG. 7 (a) is a sectional view showing a configuration of a semiconductor inspection apparatus.
  • FIG. 7 (b) is a plan view of the semiconductor inspection apparatus shown in FIG. 7 (a).
  • the soft X-ray irradiator X of the present invention includes a soft X-ray generation unit 1, a control unit 2, and a high-pressure cape 3 connecting the soft X-ray generation unit 1 and the control unit 2.
  • the control unit 2 has a cable 6 with an outlet to take power from the outside, a control cable 4 that connects the control unit 2 to an external computer, etc., and an indicator cable 5 that outputs the display contents of the control unit 2. It is provided with.
  • the soft X-ray generator 1 includes a cylindrical member 1a having a partially curved surface, and a light source 1b for generating soft X-rays inside the cylindrical member 1a. It is configured.
  • the cylindrical member la is formed of a heat insulating material such as silicon rubber, and if the temperature around the soft X-ray generation unit 1 is between 10 ° C and 120 ° C, the soft X-ray generation unit 1 Soft X-rays can be emitted without damaging the light source 1 b provided inside.
  • the cylindrical member 1a is provided with a connection socket (not shown) for connecting a high-voltage cable 3 for supplying power from the control unit 2 to the light source 1b.
  • the control unit 2 includes a box-shaped case 2a (see FIG. 1), a booster circuit and a control circuit (not shown) for the soft X-ray generation unit 1 inside the case 2a, and a case 2a.
  • An operation panel 2b provided on one side surface and a power distribution panel 2c provided on the opposite side of the operation panel 2b are provided.
  • the booster circuit inside the control unit 2 boosts a voltage input from outside the control unit 2 to a high voltage.
  • the booster circuit is designed to prevent noise that may hinder a semiconductor inspection. It is configured.
  • the control circuit is configured to control the soft X-ray irradiator X and to irradiate the soft X-ray stably from the soft X-ray generator 1. As shown in Fig.
  • the operation panel 2b of the control unit 2 has an ammeter 2d, a voltmeter 2e, a current adjustment dial 2f for adjusting the output current, and an output voltage It is equipped with a voltage adjustment dial 2 g for adjustment, a plurality of light emitting diodes 2 h (display means) and a switch 2 i for notifying the operation status of the soft X-ray irradiator X and the like.
  • the power distribution panel 2c of the case 2a has a socket 2j for connecting the high-voltage cable 3 and an external unit for operating the control unit 2 from an external input.
  • Input terminal 2k external output terminal 21 that outputs the control status of control unit 2 to the outside, power switch 2m that switches ONZO FF of the main power supply of control unit 2, and power supply to control unit 2 And a cable 6 with an outlet.
  • the high-voltage cable 3 is used to transmit a high voltage boosted inside the control unit 2 to the soft X-ray generation unit 1. Both ends of the high-voltage cable 3 include a soft X-ray generation unit 1. It is configured such that it can be connected to a socket (not shown) provided in the controller 2 and a socket 2 j provided in the controller 2.
  • the soft X-ray irradiator X configured as described above turns on the power switch on the operation panel 2 b of the control unit 2, converts the voltage to a high voltage by the booster circuit inside the control unit 2, and softens by the high-voltage cable 3.
  • soft X-rays are emitted from the light source 1b of the soft X-ray generator 1, and the irradiated air can be ionized.
  • the soft X-ray generator 1 and the controller 2 are configured separately, the size of the soft X-ray generator 1 can be reduced.
  • the thickness of beryllium which is the soft X-ray emission window of the light source 1b of the soft X-ray generation unit 1, is set so that the soft X-ray irradiator X can effectively use the voltage range of 2 KV to 4 KV.
  • beryllium having a thickness of 100 m to 200 ⁇ , the charged static electricity can be eliminated in a short time.
  • beryllium can be preferably used because it has the lowest power of absorbing electromagnetic waves among all the substances.
  • the light source 1b can be used without deteriorating the function of the light source 1b even in a high temperature environment. .
  • the soft X-ray generator 1 is made small, It can be easily attached to equipment and semiconductor inspection equipment. In particular, static electricity generated during semiconductor assembly, transportation, inspection, etc. can be easily eliminated.
  • the ion balance becomes 50:50 (positive ion: negative ion). Therefore, reverse charging does not occur, and the charge can be removed to a very low potential in a short time. it can.
  • a semiconductor assembling apparatus and a semiconductor inspection apparatus provided with the soft X-ray irradiator X will be described.
  • a semiconductor assembling apparatus including the soft X-ray irradiator X will be described in detail with reference to FIGS.
  • a semiconductor chip is one in which a semiconductor and a lead are connected (assembled).
  • the semiconductor assembling apparatus 7 including the soft X-ray generator X includes a soft X-ray generator 1 of the soft X-ray generator X, a lead R provided on a substrate S, and a semiconductor Z. , A transport device (not shown) for moving the semiconductor Z, a mounting device (not shown) for mounting the semiconductor Z at a fixed position, and the like.
  • the control unit 2 that supplies and controls power to the soft X-ray generation unit 1 is connected to the soft X-ray generation unit 1 by a high-voltage cable 3 and is provided outside the semiconductor assembling apparatus 7.
  • a plurality of leads R are provided on the substrate S and connected to the bonding pad Z1 of the semiconductor Z mounted on the substrate S, thereby supplying power to the semiconductor Z and operating as a semiconductor chip V. Can be done.
  • the same number of bonding pads Z1 as the number of leads R are provided on the semiconductor Z in order to connect the leads R to the integrated circuit inside the semiconductor Z.
  • the cable 7a is used when connecting the semiconductor Z and the lead R using a gold wire or the like.
  • the method of connecting the gold wire G between the semiconductor Z and the lead R using the cable 7a is as follows. By applying a high current to the cable 7a and welding a gold wire, the bonding pad Z1 and the lead R can be connected (see Fig. 6 (b)).
  • the transport device is capable of transporting a substrate S having leads R before assembly and transporting (assembled) semiconductor chips V in which the leads and the semiconductor Z are connected (for example, a roller or a belt conveyor). Can be used as a transport device.
  • the mounting device is used for mounting the semiconductor Z in a fixed position on the substrate S.
  • a robot hand or the like can be used as the mounting device.
  • the semiconductor assembling apparatus 7 configured as described above emits soft X-rays from the soft X-ray generation unit 1 provided in the semiconductor assembling apparatus 7 to ionize the air in the assembling apparatus 7, and FIG.
  • the mounting device is used at a fixed position on the substrate S, and as shown in FIG. 5 (b), the semiconductor Z is mounted at a fixed position and fixed. Even if static electricity is generated when the semiconductor Z is placed on the substrate S, the static electricity can be eliminated by the ionized air.
  • FIG. 6 (a) the bonding pad Z1 and the lead R of the semiconductor Z mounted on the substrate S are used, and as shown in FIG. 6 (b), a cable 7a is used.
  • the semiconductor assembling apparatus 7 including the soft X-ray irradiator X is provided with the soft X-ray generator 1 of the soft X-ray irradiator X in the semiconductor assembling apparatus 7 and irradiates the semiconductor with soft X-rays.
  • the soft X-ray generator 1 of the soft X-ray irradiator X in the semiconductor assembling apparatus 7 and irradiates the semiconductor with soft X-rays.
  • the static electricity generated when transferring and connecting the semiconductor Z using the semiconductor assembler 7 is reduced to 100 V to 0 V at a distance of 10 cm in a short time of 12 seconds or less. By doing so, it is possible to prevent dust, electrostatic discharge destruction, and deterioration due to electrostatic discharge from attaching to the semiconductor Z or the semiconductor chip V.
  • a semiconductor inspection apparatus 8 using a soft X-ray irradiator X was provided with a box-shaped chamber 8a having a hollow portion, and provided inside the chamber 8a.
  • a soft X-ray generator 1 provided on the side, one end of a high-voltage cable 3 is connected to the soft X-ray generator 1, and a multi-end is connected to a control unit 2 installed outside the chamber 8a. Has been established.
  • a method of using the semiconductor inspection apparatus 8 configured as described above will be described. As shown in FIG. 7 (a), first, soft X-rays are irradiated from a soft X-ray generator 1 provided on one side surface of the chamber 8a to ionize the air inside the chamber 8a.
  • the semiconductor chip V to be inspected is placed on the shuttle 8e , and the shuttle 8e is attached to the contact chuck 8c of the rotary head 8b. Then, the mouth tally head 8b is rotated and moved to above the contact portion 8f. After the shuttle 8e on which the semiconductor chip V is mounted arrives above the contact portion 8f, the contact chuck 8c is lowered to move the semiconductor chip V mounted on the shuttle 8e to the contact portion 8f. Connect to and power on the semiconductor chip V to check the operation. Then, after energizing the semiconductor chip V to check the operation, the contact chuck 8c is raised, and the shuttle 8e on which the inspected semiconductor chip V is mounted is removed from the contact portion 8f. Then, the rotary head 8b is rotated, and the contact chuck 8c is moved to take out the shuttle 8e from the inspected outlet of the semiconductor inspection apparatus 8.
  • the soft X-ray generator 1 is made of a heat insulating material so as to withstand high temperatures, the soft X-ray light source 1 b is not destroyed by heat, and the soft X-ray is stable.
  • the line can be irradiated.
  • the semiconductor inspection apparatus 8 provided with the soft X-ray irradiator X is one of the chambers 8a.
  • the soft X-ray generation unit 1 provided on the side surface to the part of the chamber 8a to ionize the air, static electricity charged on the semiconductor inspection device 8 and the semiconductor chip V is eliminated. This can prevent electrostatic discharge destruction caused by discharging static electricity to the semiconductor chip V.
  • the static electricity generated when the semiconductor Z is delivered and received using the semiconductor inspection device 8 is removed within a short time of 12 seconds or less, which reduces the static electricity to 100 V to 0 V at a distance of 10 cm. This can prevent electrostatic discharge damage and deterioration due to electrostatic discharge, and can also take measures against noise at the same time.
  • the heat insulating material of the soft X-ray generating unit 1 silicon rubber is used, but the present invention is not limited to this.
  • materials such as glass wool using glass fiber, ceramic, and phenol can be used.
  • the present invention is not limited thereto, and the liquid crystal manufacturing apparatus and the liquid crystal It can be used for assembling equipment, liquid crystal inspection equipment, etc., and can remove charged static electricity to prevent electrostatic discharge destruction.
  • the present invention is not particularly limited thereto. Since the soft X-ray generator 1 and the controller 2 are configured separately from each other, the X can be easily attached to, for example, an existing semiconductor assembling apparatus or inspection apparatus. Further, a fan for circulating air may be attached to the semiconductor assembling apparatus 7 and the semiconductor inspection apparatus 8 so as to circulate ionized air. In particular, even in the case of a hermetically sealed state like the semiconductor inspection device 8, the ionized air can be circulated inside, and static electricity can be effectively eliminated.
  • the soft X-ray irradiator of the present invention includes a soft X-ray generator that irradiates soft X-rays and a controller that supplies and controls power to the soft X-ray generator.
  • the soft X-ray generator can be downsized by using a high-voltage cable.
  • the soft X-ray generator can stably emit soft X-rays even in a high temperature environment.
  • the soft X-ray generator of the soft X-ray irradiator of the present invention in a semiconductor assembling apparatus or an inspection apparatus, static electricity generated in a semiconductor assembling step or an inspection step can be easily eliminated.
  • the semiconductor device can be easily attached without largely changing the configuration of the semiconductor assembling apparatus or the semiconductor inspection apparatus.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Elimination Of Static Electricity (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • X-Ray Techniques (AREA)

Abstract

A soft X-ray generating unit (1) and a control unit (2) are separately provided and interconnected through a high-voltage cable (3), thereby reducing the size of the soft X-ray generating unit (1). The soft X-ray generating unit (1) is installed in a semiconductor assembling apparatus (7) or a semiconductor inspecting instrument (8). The air is ionized by irradiating the air with soft X-rays from the soft X-ray generating unit (1) to eliminate the static charge accumulated in a semiconductor (Z) or a semiconductor chip (V). Even at a use environment temperature at which the semiconductor device operates, the soft X-ray generating unit (1) can be stably used without causing malfunction and breakdown of a step-up circuit.

Description

明細書 軟 X線照射装置及び半導体の組立装置並びに検査装置 技術分野  Description Soft X-ray irradiation device, semiconductor assembling device, and inspection device
本発明は、 軟 X線を照射して空気をイオン化させる軟 X線照射装置及び軟 X線 照射装置を用いた半導体の組立装置並びに半導体の検査装置に関する。 背景技術  The present invention relates to a soft X-ray irradiator that irradiates soft X-rays to ionize air, a semiconductor assembling apparatus using the soft X-ray irradiator, and a semiconductor inspection apparatus. Background art
従来、軟 X線を照射する軟 X線照射装置は、軟 X線を照射する軟 X線光源部と、 この軟 X線光源部に電源を供給するインバーター回路等を備えた電源部と、 軟 X 線光源を制御する制御部等を備えて構成されている。 特に、 軟 X線を照射させる ために、 電源部から供給される電圧を高電圧に昇圧させる昇圧装置が軟 X線光源 と一緒に組み込まれている。  Conventionally, a soft X-ray irradiator for irradiating soft X-rays includes a soft X-ray light source unit for irradiating soft X-rays, a power supply unit including an inverter circuit for supplying power to the soft X-ray light source unit, and the like. It is provided with a control unit and the like for controlling the X-ray light source. In particular, a booster that boosts the voltage supplied from the power supply unit to a high voltage to irradiate soft X-rays is incorporated together with the soft X-ray light source.
このように構成された軟 X線照射装置は、空気中に向けて軟 X線を照射すると、 空気をイオン化させることができる。 このイオン化された空気は、 静電気が帯電 した対象物に接触することで、対象物から静電気を除電することができる。特に、 半導体等の集積回路に静電気が放電すると静電気放電破壊を起こすため、半導体、 半導体の製造装置、 半導体の検査装置等に帯電した静電気を除電するために軟 X 線照射装置が利用されている （例えば、 特開平 8— 4 5 6 9 5号公報参照)。 しかしながら、 従来の軟 X線照射装置は、 軟 X線光源と昇圧回路が一体ィヒして 構成されているので、 軟 X線光源部の構成が大きくなり、 既存の半導体の組立装 置や検査装置に軟 X線照射装置を取り付けるのが難しいという問題があった。 また、 半導体を通電させて、 半導体の使用環境温度 （動作時の温度） の状態で 検査を行う場合、 半導体の検査装置の温度も高温となり、 軟 X線光源と一緒に組 み付けた昇圧回路が誤作動や破損してしまうという問題があった。 発明の開示  The soft X-ray irradiator configured as described above can ionize air when irradiated with soft X-rays toward the air. This ionized air can remove static electricity from the target object by coming into contact with the charged object. In particular, when static electricity is discharged to an integrated circuit such as a semiconductor, electrostatic discharge breakdown occurs, so a soft X-ray irradiator is used to remove static electricity charged in a semiconductor, a semiconductor manufacturing device, a semiconductor inspection device, and the like. (See, for example, JP-A-8-45695). However, since the conventional soft X-ray irradiator is constructed by integrating the soft X-ray light source and the booster circuit, the configuration of the soft X-ray light source unit becomes large, and the existing semiconductor assembly equipment and inspection equipment There was a problem that it was difficult to attach a soft X-ray irradiation device to the device. In addition, when the semiconductor is energized and the inspection is performed at the operating temperature of the semiconductor (temperature during operation), the temperature of the semiconductor inspection equipment also becomes high, and the booster circuit assembled with the soft X-ray light source However, there is a problem that the device is malfunctioned or damaged. Disclosure of the invention
本発明の一側面として、 半導体が動作する使用環境温度でも昇圧回路の誤作動 や破壊を起こすことなく安定して使用することができる、 軟 X線照射装置及び半 導体の組立装置並びに組立装置を提供することがある。 As one aspect of the present invention, a malfunction of a booster circuit even at a use environment temperature at which a semiconductor operates. In some cases, a soft X-ray irradiator, a semiconductor assembling apparatus, and an assembling apparatus that can be used stably without causing damage or destruction are provided.
本発明の一例としての軟 X線照射装置は、 軟 X線を照射する軟 X線発生部と、 前記軟 X線発生部の電源の供給及び制御を行う制御部とを備える軟 X線照射装置 であって、 前記軟 X線発生部と制御部とが別体で形成され、 一部が高圧ケーブル で接続されている。  A soft X-ray irradiator as an example of the present invention includes a soft X-ray irradiator that irradiates soft X-rays, and a controller that supplies and controls power of the soft X-ray generator. Wherein the soft X-ray generation unit and the control unit are formed separately, and a part thereof is connected by a high-voltage cable.
この軟 X線照射装置によれば、 軟 X線発生部と制御部とを別体で形成し、 軟 X 線発生部と制御部とを高圧ケーブルで接続するように構成することで、 軟 X線発 生部を小型化させることができ、 軟 X線照射装置の構成を簡単にすることができ る。 特に、 軟 X線発生部を小型化することによって、 様々な装置に簡単に取り付 けて、 軟 X線を照射して空気をイオン化することができる。  According to this soft X-ray irradiator, the soft X-ray generation unit and the control unit are formed separately, and the soft X-ray generation unit and the control unit are connected by a high-voltage cable. The size of the X-ray generator can be reduced, and the configuration of the soft X-ray irradiator can be simplified. In particular, by reducing the size of the soft X-ray generator, it can be easily attached to various devices and irradiate soft X-rays to ionize air.
また、 本発明の軟 X線照射装置の前記軟 X線発生部は、 断熱材で被覆されてい るものとするのが好ましいが、 必ずしもそうする必要はない。 軟 X線発生部を断 熱材で被覆することで、 効果的に断熱することができ、 軟 X線発生部の外部の温 度が高温であっても、 軟 X線発生部を設置する場所の温度に左右されることがな く、 軟 X線発生部の損傷や破壊を防止し、 高温環境下でも軟 X線を照射すること ができる。 また、 軟 X線発生部に、 冷却板や冷却フィンや冷却ファン等の冷却手 段を備えて冷却を行うように構成してもよい。 この断熱材は、 シリコンゴムを用 いて構成するのが好ましいが、 必ずしもそうする必要はない。 シリコンゴムを用 いることで効果的に断熱することができるので、 軟 X線発生部の外部の温度が高 温であっても、 軟 X線発生部の損傷や破壊を防止し、 高温環境下でも軟 X線を照 射することができる。  The soft X-ray generator of the soft X-ray irradiator of the present invention is preferably covered with a heat insulating material, but is not necessarily required. By covering the soft X-ray generation part with a heat insulating material, heat insulation can be effectively achieved, and even if the temperature outside the soft X-ray generation part is high, the place where the soft X-ray generation part is installed The soft X-ray generator can be protected from damage and destruction without being affected by the temperature of the soft X-ray, and can be irradiated with soft X-rays even in a high temperature environment. Further, the soft X-ray generator may be provided with a cooling means such as a cooling plate, a cooling fin, or a cooling fan to perform cooling. The insulation is preferably, but not necessarily, constructed from silicone rubber. The use of silicone rubber provides effective heat insulation, preventing damage and destruction of the soft X-ray generator even when the temperature outside the soft X-ray generator is high, and in high-temperature environments. But it can irradiate soft X-rays.
さらに、 本発明の他の例としての半導体の組立装置は、 前記のような軟 X線照 射装置と、 半導体のボンディングパットとリードを結線するキヤビラリと、 組立 済みの前記半導体を搬送する搬送手段とを備える半導体の組立装置であって、 前 記軟 X線発生部から軟 X線を照射し、 前記半導体及び前記組立装置に帯電した静 電気の除電を行うものである。  Further, a semiconductor assembling apparatus as another example of the present invention includes: a soft X-ray irradiator as described above; a cab for connecting a semiconductor bonding pad and a lead; and a transporting unit for transporting the assembled semiconductor. A semiconductor X-ray irradiator configured to irradiate soft X-rays from the soft X-ray generator to remove static electricity charged on the semiconductor and the assembly device.
この半導体の組立装置によれば、 軟 X線照射装置の軟 X線発生部を備えている ので、 この軟 X線発生部から軟 X線を照射して空気をイオン化させることで、 半 導体や半導体の組立装置に帯電している静電気を簡単に除電することができる。 このため、 半導体の組立作業中又は半導体の搬送時に発生する静電気による半導 体の静電気放電破壊を防止することができる。 なお、 半導体の組立装置として、 ウェハーマウンター型、 ワイヤーボンダ一型、 マーキング型等を用いることがで きるが、 これらに限定されない。 According to this semiconductor assembling apparatus, the soft X-ray irradiator is provided with a soft X-ray generating unit. The static electricity charged on the conductor or semiconductor assembling apparatus can be easily eliminated. For this reason, it is possible to prevent electrostatic discharge damage of the semiconductor due to static electricity generated during semiconductor assembly work or semiconductor transport. In addition, as a semiconductor assembling apparatus, a wafer mounter type, a wire bonder type 1, a marking type, or the like can be used, but is not limited thereto.
また、 本発明のさらに他の例としての半導体の検査装置は、 前記軟 X線照射装 置と、 中空部を有し箱型に形成されたチャンバと、 このチャンバの内部に設けら れ半導体の検査を行う検査手段と、 半導体の搬送を行う搬送手段とを備える半導 体の検査装置であって、 前記チヤンバの一側面に前記軟 X線照射装置の軟 X線発 生部を備えると共に前記チャンバの内部に軟 X線を照射し、 前記検査手段及び前 記半導体に帯電した静電気を除電するものである。  In addition, a semiconductor inspection apparatus as still another example of the present invention includes the soft X-ray irradiation apparatus, a box-shaped chamber having a hollow portion, and a semiconductor provided inside the chamber. What is claimed is: 1. A semiconductor inspection apparatus comprising: inspection means for performing inspection; and transport means for transporting a semiconductor, comprising: a soft X-ray generation unit of the soft X-ray irradiation device on one side surface of the chamber; The inside of the chamber is irradiated with soft X-rays to eliminate static electricity charged on the inspection means and the semiconductor.
この半導体の検査装置によれば、 内部に半導体の検査手段や搬送手段を備えた チャンバの一側面に軟 X線発生部を備えると共に、 軟 X線の照射方向をチャンバ の内部方向に構成することで、 軟 X線発生部から軟 X線を照射してチヤンバ內部 の空気をイオン化し、 チャンバ内部の半導体、 半導体の検査手段及び半導体の搬 送手段等に帯電した静電気を除電して、 半導体の静電気放電破壊を防止すること ができる。 なお、 半導体の検査装置として、 プローバー型、 ハンドラ型、 スキヤ ナー型等を検査装置として用いることができるが、 これらに限定されない。 図面の簡単な説明  According to this semiconductor inspection apparatus, a soft X-ray generation unit is provided on one side surface of a chamber provided with a semiconductor inspection unit and a transport unit inside, and the irradiation direction of the soft X-ray is configured to be in the interior of the chamber. Then, soft X-rays are radiated from the soft X-ray generator to ionize the air in the chamber, and the static electricity charged to the semiconductor, semiconductor inspection means, semiconductor transport means, etc. inside the chamber is discharged, and the semiconductor Electrostatic discharge destruction can be prevented. In addition, as a semiconductor inspection device, a prober type, a handler type, a scanner type, or the like can be used as an inspection device, but is not limited thereto. BRIEF DESCRIPTION OF THE FIGURES
第 1図は、 軟 X線照射装置の構成を示す斜視図である。  FIG. 1 is a perspective view showing a configuration of a soft X-ray irradiation device.
第 2図は、 第 1図に示した軟 X線発生部を示す拡大図である。  FIG. 2 is an enlarged view showing the soft X-ray generator shown in FIG.
第 3図 （a ) は、 第 1図に示した制御部の操作パネルを示す平面図である。 第 3図 （b ) は、 第 1図に示した制御部の配電パネルを示す平面図である。 第 4図は、 半導体の組立装置における、 ワイヤーボンダ一の構成を示す斜視図 である。  FIG. 3 (a) is a plan view showing an operation panel of the control unit shown in FIG. FIG. 3 (b) is a plan view showing a power distribution panel of the control unit shown in FIG. FIG. 4 is a perspective view showing a configuration of a wire bonder in a semiconductor assembling apparatus.
第 5図 （a ) は、 半導体を示す斜視図である。  FIG. 5 (a) is a perspective view showing a semiconductor.
第 5図 （b ) は、 第 5図 （a ) に示した半導体を載置するリードを有する基板 を示す斜視図である。 第 6図 （a ) は、 半導体を基板に載置した状態を示す斜視図である。 FIG. 5 (b) is a perspective view showing a substrate having leads for mounting the semiconductor shown in FIG. 5 (a). FIG. 6 (a) is a perspective view showing a state where a semiconductor is mounted on a substrate.
第 6図 （b ) は、 半導体とリードとを結線している状態を示す斜視図である。 第 7図 （a ) は、 半導体の検査装置の構成を示す断面図である。  FIG. 6 (b) is a perspective view showing a state where the semiconductor and the lead are connected. FIG. 7 (a) is a sectional view showing a configuration of a semiconductor inspection apparatus.
第 7図 （b ) は、 第 7図 （a ) に示す半導体の検査装置の平面図である。 発明を実施するための最良の形態  FIG. 7 (b) is a plan view of the semiconductor inspection apparatus shown in FIG. 7 (a). BEST MODE FOR CARRYING OUT THE INVENTION
以下、 本発明に係る軟 X線照射装置の一実施形態について、 適宣図面を参照し て説明する。 まず、 本発明に係る軟 X線照射装置の構成について、 第 1図〜第 3 図を参照して説明する。  Hereinafter, an embodiment of the soft X-ray irradiation apparatus according to the present invention will be described with reference to the appropriate drawings. First, the configuration of the soft X-ray irradiator according to the present invention will be described with reference to FIGS.
本発明の軟 X線照射装置 Xは、 第 1図に示すように、 軟 X線発生部 1と、 制御 部 2と、 軟 X線発生部 1と制御部 2とを接続する高圧ケープノレ 3と、 制御部 2に 外部から電源を取り込むコンセント付ケーブル 6と、 制御部 2と外部のコンビュ ータ等と接続する制御ケーブル 4と、 制御部 2の表示内容を出力する表示灯ケー ブル 5とを備えて構成されている。  As shown in FIG. 1, the soft X-ray irradiator X of the present invention includes a soft X-ray generation unit 1, a control unit 2, and a high-pressure cape 3 connecting the soft X-ray generation unit 1 and the control unit 2. The control unit 2 has a cable 6 with an outlet to take power from the outside, a control cable 4 that connects the control unit 2 to an external computer, etc., and an indicator cable 5 that outputs the display contents of the control unit 2. It is provided with.
軟 X線発生部 1は、 第 2図に示すように、 一部曲面を有した筒状部材 1 aと、 この筒状部材 1 aの内部に軟 X線を発生する光源 1 bを備えて構成されている。 筒状部材 l aは、 シリコンゴム等の断熱材で形成され、 軟 X線発生部 1の周囲の 温度が 1 0 °C〜 1 2 0 °Cの間であれば、 軟 X線発生部 1の内部に備えられた光源 1 bを破損させることなく、 軟 X線を照射することができるようになつている。 また、 筒状部材 1 aには、 光源 1 bに制御部 2からの電力を供給する高圧ケープ ル 3を接続する図示しない接続ソケッ卜が設けられている。  As shown in FIG. 2, the soft X-ray generator 1 includes a cylindrical member 1a having a partially curved surface, and a light source 1b for generating soft X-rays inside the cylindrical member 1a. It is configured. The cylindrical member la is formed of a heat insulating material such as silicon rubber, and if the temperature around the soft X-ray generation unit 1 is between 10 ° C and 120 ° C, the soft X-ray generation unit 1 Soft X-rays can be emitted without damaging the light source 1 b provided inside. The cylindrical member 1a is provided with a connection socket (not shown) for connecting a high-voltage cable 3 for supplying power from the control unit 2 to the light source 1b.
制御部 2は、 箱状に形成されたケース 2 a (第 1図参照） と、 ケース 2 aの内 部に軟 X線発生部 1用の図示しない昇圧回路や制御回路と、 ケース 2 aの一側面 に設けられた操作パネル 2 bと、 この操作パネル 2 bの反対側に設けられた配電 パネル 2 cとを備えて構成されている。 なお、 制御部 2の内部の昇圧回路は、 制 御部 2の外部から入力される電圧を高電圧に昇圧するものであり、 特に、 半導体 の検査時に支障となるようなノィズを発生しないように構成されている。 また、 制御回路は、 軟 X線照射装置 Xの制御を行い、 軟 X線発生部 1から安定して軟 X 線を照射することができるように構成されている。 制御部 2の操作パネル 2 bには、 第 3図 （a ) に示すように、 電流計 2 dと、 電圧計 2 eと、 出力電流の調整を行う電流調整ダイヤル 2 f と、 出力電圧の調整 を行う電圧調整ダイヤル 2 gと、 軟 X線照射装置 Xの動作状況等を知らせる複数 の発光ダイオード 2 h (表示手段） とスィッチ 2 iが備わっている。 The control unit 2 includes a box-shaped case 2a (see FIG. 1), a booster circuit and a control circuit (not shown) for the soft X-ray generation unit 1 inside the case 2a, and a case 2a. An operation panel 2b provided on one side surface and a power distribution panel 2c provided on the opposite side of the operation panel 2b are provided. The booster circuit inside the control unit 2 boosts a voltage input from outside the control unit 2 to a high voltage.In particular, the booster circuit is designed to prevent noise that may hinder a semiconductor inspection. It is configured. Further, the control circuit is configured to control the soft X-ray irradiator X and to irradiate the soft X-ray stably from the soft X-ray generator 1. As shown in Fig. 3 (a), the operation panel 2b of the control unit 2 has an ammeter 2d, a voltmeter 2e, a current adjustment dial 2f for adjusting the output current, and an output voltage It is equipped with a voltage adjustment dial 2 g for adjustment, a plurality of light emitting diodes 2 h (display means) and a switch 2 i for notifying the operation status of the soft X-ray irradiator X and the like.
また、 ケース 2 aの配電パネル 2 cには、 第 3図 （b ) に示すように、 高圧ケ 一ブル 3を接続するソケット 2 j と、 外部入力から制御部 2を操作するための外 部入力端子 2 kと、 制御部 2の制御状態を外部に出力する外部出力端子 2 1と、 制御部 2の主電源の ONZO F Fを切り替える電源スィツチ 2 mと、 制御部 2に 電力を供給するためにコンセント付ケーブル 6が設けられている。  As shown in FIG. 3 (b), the power distribution panel 2c of the case 2a has a socket 2j for connecting the high-voltage cable 3 and an external unit for operating the control unit 2 from an external input. Input terminal 2k, external output terminal 21 that outputs the control status of control unit 2 to the outside, power switch 2m that switches ONZO FF of the main power supply of control unit 2, and power supply to control unit 2 And a cable 6 with an outlet.
高圧ケーブル 3は、 制御部 2の内部で昇圧された高電圧を軟 X線発生部 1に送 電する時に使用するものであり、 この高圧ケーブル 3の両端部には、 軟 X線発生 部 1に設けられた図示しないソケッ卜と制御部 2に設けられたソケット 2 jに接 続することができるように構成されている。  The high-voltage cable 3 is used to transmit a high voltage boosted inside the control unit 2 to the soft X-ray generation unit 1. Both ends of the high-voltage cable 3 include a soft X-ray generation unit 1. It is configured such that it can be connected to a socket (not shown) provided in the controller 2 and a socket 2 j provided in the controller 2.
このように構成された軟 X線照射装置 Xは、 制御部 2の操作パネル 2 bにある 電源スィッチを入れ、 制御部 2の内部の昇圧回路で高電圧に変換し、 高圧ケープ ル 3で軟 X線発生部 1に送電されると、 軟 X線発生部 1の光源 1 bから軟 X線が 照射され、 照射された空気をイオン化させることができる。 特に、 軟 X線発生部 1と制御部 2が別体で構成することで、 軟 X線発生部 1を小型化することができ る。  The soft X-ray irradiator X configured as described above turns on the power switch on the operation panel 2 b of the control unit 2, converts the voltage to a high voltage by the booster circuit inside the control unit 2, and softens by the high-voltage cable 3. When power is transmitted to the X-ray generator 1, soft X-rays are emitted from the light source 1b of the soft X-ray generator 1, and the irradiated air can be ionized. In particular, since the soft X-ray generator 1 and the controller 2 are configured separately, the size of the soft X-ray generator 1 can be reduced.
また、 軟 X線照射装置 Xで電圧が 2 KV〜 4 KVの範囲を有効に使用すること ができるように、 軟 X線発生部 1の光源 1 bの軟 X線放射窓であるベリリゥムの 厚さを 1 0 0 mないし 2 0 0 μ πιの厚さのベリリゥムを備えるように構成する ことで、帯電した静電気を短時間で除電することができる。なお、ベリリゥムは、 全ての物質の中で電磁波を吸収する力がもっとも低いため好適に利用することが できる。  The thickness of beryllium, which is the soft X-ray emission window of the light source 1b of the soft X-ray generation unit 1, is set so that the soft X-ray irradiator X can effectively use the voltage range of 2 KV to 4 KV. By providing a beryllium having a thickness of 100 m to 200 μππ, the charged static electricity can be eliminated in a short time. Note that beryllium can be preferably used because it has the lowest power of absorbing electromagnetic waves among all the substances.
また、 軟 X線の光源 1 bを常温度 1 0 Wクラスの熱容量の大きな光源 1 bを使 用することにより、 高温環境でも光源 1 bの機能劣化を起こすことがなく使用す ることができる。  In addition, by using the soft X-ray light source 1b with a large heat capacity of 1W at room temperature, the light source 1b can be used without deteriorating the function of the light source 1b even in a high temperature environment. .
また、 軟 X線発生部 1が小型に形成されていることで、 既存の半導体の組立装 置や半導体の検査装置に簡単に取り付けることができ、 特に、 半導体の組立， 搬 送， 検査等に発生する静電気を簡単に除電することができる。 なお、 軟 X線で空 気をイオン化すると、 イオンバランスが 5 0 : 5 0 (プラスイオン：マイナスィ オン） となるため、 逆帯電を起こすことがなく、 短時間できわめて低い電位まで 除電することができる。 In addition, because the soft X-ray generator 1 is made small, It can be easily attached to equipment and semiconductor inspection equipment. In particular, static electricity generated during semiconductor assembly, transportation, inspection, etc. can be easily eliminated. When soft X-rays are used to ionize air, the ion balance becomes 50:50 (positive ion: negative ion). Therefore, reverse charging does not occur, and the charge can be removed to a very low potential in a short time. it can.
次に、 軟 X線照射装置 Xを備えた半導体の組立装置及び半導体の検査装置につ いて説明する。 まず、 軟 X線照射装置 Xを備えた半導体の組立装置について、 第 4図〜第 6図を参照して詳細に説明する。 なお、 以下の説明において、 半導体と リードとが結線されたもの （組立済み） を半導体チップとする。  Next, a semiconductor assembling apparatus and a semiconductor inspection apparatus provided with the soft X-ray irradiator X will be described. First, a semiconductor assembling apparatus including the soft X-ray irradiator X will be described in detail with reference to FIGS. In the following description, a semiconductor chip is one in which a semiconductor and a lead are connected (assembled).
軟 X線発生装置 Xを備える半導体の組立装置 7は、 第 4図に示すように、 軟 X 線発生装置 Xの軟 X線発生部 1と、 基板 S上に設けられたリード Rと半導体 Zを 結線するキヤビラリ 7 aと、 半導体 Zを移動させる図示しない搬送装置と、 半導 体 Zを定位置に載置する図示しない載置装置等を備えて構成されている。 なお、 軟 X線発生部 1に電源の供給や制御を行う制御部 2は、 高圧ケーブル 3で軟 X線 発生部 1と接続されると共に半導体の組立装置 7の外部に設けられている。 ここで、 リード Rは、 基板 S上に複数設けられると共に、 基板 S上に載置され た半導体 Zのボンディングパット Z 1と結線することで、 半導体 Zに電力を供給 して半導体チップ Vとして動作させることができる。 また、 ボンディングパット Z 1は、 半導体 Zの内部の集積回路とリード Rを結線するために、 半導体 Z上に リード Rと同数設けられている。  As shown in FIG. 4, the semiconductor assembling apparatus 7 including the soft X-ray generator X includes a soft X-ray generator 1 of the soft X-ray generator X, a lead R provided on a substrate S, and a semiconductor Z. , A transport device (not shown) for moving the semiconductor Z, a mounting device (not shown) for mounting the semiconductor Z at a fixed position, and the like. The control unit 2 that supplies and controls power to the soft X-ray generation unit 1 is connected to the soft X-ray generation unit 1 by a high-voltage cable 3 and is provided outside the semiconductor assembling apparatus 7. Here, a plurality of leads R are provided on the substrate S and connected to the bonding pad Z1 of the semiconductor Z mounted on the substrate S, thereby supplying power to the semiconductor Z and operating as a semiconductor chip V. Can be done. The same number of bonding pads Z1 as the number of leads R are provided on the semiconductor Z in order to connect the leads R to the integrated circuit inside the semiconductor Z.
キヤビラリ 7 aは、 半導体 Zとリード Rとを金線等を用いて結線する際に使用 するものであり、 このキヤビラリ 7 aを使用して半導体 Zとリード Rとの金線 G の結線方法は、 キヤビラリ 7 aに高電流を流し、 金線を溶接することでボンディ ングパット Z 1とリード Rを結線することができる （第 6図 （b ) 参照)。  The cable 7a is used when connecting the semiconductor Z and the lead R using a gold wire or the like.The method of connecting the gold wire G between the semiconductor Z and the lead R using the cable 7a is as follows. By applying a high current to the cable 7a and welding a gold wire, the bonding pad Z1 and the lead R can be connected (see Fig. 6 (b)).
搬送装置は、 組立前のリード Rを有する基板 Sを搬送すると共に、 リード と 半導体 Zが結線された （組立済み） 半導体チップ Vを搬送することができるもの であり、 例えば、 ローラやベルトコンベア等を搬送装置として用いることができ る。  The transport device is capable of transporting a substrate S having leads R before assembly and transporting (assembled) semiconductor chips V in which the leads and the semiconductor Z are connected (for example, a roller or a belt conveyor). Can be used as a transport device.
また、 載置装置は、 基板 S上の定位置に半導体 Zを載置する際に使用するもの であり、 例えば、 ロボットハンド等を載置装置として用いることができる。 The mounting device is used for mounting the semiconductor Z in a fixed position on the substrate S. For example, a robot hand or the like can be used as the mounting device.
このように構成された半導体の組立装置 7は、 半導体の組立装置 7に備える軟 X線発生部 1から軟 X線を照射し、組立装置 7の空気をィオン化させ、第 5図（ a ) に示すように、基板 S上の定位置に載置装置を使レ、、第 5図（b )に示すように、 半導体 Zを定位置に載置して固定する。 基板 S上に半導体 Zを載置する際に静電 気が発生しても、 イオン化された空気によって静電気を除電することができる。 そして、 第 6図 （a ) に示すように、 基板 S上に載置された半導体 Zのボンデ ィングパット Z 1とリード Rを、 第 6図 （b ) に示すように、 キヤビラリ 7 aを 用いて金線 Gで溶接することで結線して半導体チップ Vを完成させる。このとき、 リード Rとボンディングパット Z 1との溶接時に静電気が発生しても、 軟 X線を 照射して空気がイオン化されているため、 発生した静電気を除電することができ る。  The semiconductor assembling apparatus 7 configured as described above emits soft X-rays from the soft X-ray generation unit 1 provided in the semiconductor assembling apparatus 7 to ionize the air in the assembling apparatus 7, and FIG. As shown in FIG. 5, the mounting device is used at a fixed position on the substrate S, and as shown in FIG. 5 (b), the semiconductor Z is mounted at a fixed position and fixed. Even if static electricity is generated when the semiconductor Z is placed on the substrate S, the static electricity can be eliminated by the ionized air. Then, as shown in FIG. 6 (a), the bonding pad Z1 and the lead R of the semiconductor Z mounted on the substrate S are used, and as shown in FIG. 6 (b), a cable 7a is used. To complete the semiconductor chip V by welding with gold wire G. At this time, even if static electricity is generated at the time of welding the lead R and the bonding pad Z1, the generated static electricity can be eliminated because the air is ionized by irradiating soft X-rays.
以上より、 軟 X線照射装置 Xを備えた半導体の組立装置 7は、 軟 X線照射装置 Xの軟 X線発生部 1を半導体の組立装置 7に備えて、 軟 X線を照射して半導体の 組立装置 7の空気をイオン化させることで半導体チップ Vの組み立て時に発生す る静電気を除電することができると共に、 半導体チップ Vを静電気によつて静電 気放電破壊することなく組み立てることができる。  As described above, the semiconductor assembling apparatus 7 including the soft X-ray irradiator X is provided with the soft X-ray generator 1 of the soft X-ray irradiator X in the semiconductor assembling apparatus 7 and irradiates the semiconductor with soft X-rays. By ionizing the air of the assembling apparatus 7, static electricity generated when assembling the semiconductor chip V can be eliminated, and the semiconductor chip V can be assembled without being destroyed by electrostatic discharge due to the static electricity.
また、 半導体の組立装置 7を用いて、 半導体 Zの受け渡しや結線する際に発生 する静電気を距離 1 0 c mで 1 0 0 0 V〜0 Vまで落とす時間が 1 2秒以下の短 時間で除電することで、 半導体 Z又は半導体チップ Vにごみの付着、 静電気放電 破壊、 静電気放電による劣化を防止することができる。  In addition, the static electricity generated when transferring and connecting the semiconductor Z using the semiconductor assembler 7 is reduced to 100 V to 0 V at a distance of 10 cm in a short time of 12 seconds or less. By doing so, it is possible to prevent dust, electrostatic discharge destruction, and deterioration due to electrostatic discharge from attaching to the semiconductor Z or the semiconductor chip V.
次に、 軟 X線照射装置 Xを用いた半導体の検査装置について第 7図を参照して 詳細に説明する。  Next, a semiconductor inspection apparatus using the soft X-ray irradiation apparatus X will be described in detail with reference to FIG.
第 7図（ a )に示すように、軟 X線照射装置 Xを用いた半導体の検査装置 8は、 中空部を備えた箱型のチャンバ 8 aと、 このチャンバ 8 aの内部に設けられた口 一タリーへッド 8 bと、 ロータリーへッド 8 bに取り付けられ鉛直方向に稼動可 能なコンタクトチャック 8 cと、 コンタクトチャック 8 cに取り付けられ、 半導 体チップ Vを載置するシャトノレ 8 eと、 半導体チップ Vの動作検査を行うコンタ ク ト部 8 f と、 チャンバ 8の内部に軟 X線が照射されるようにチャンバ 8 aの一 側面に設けられた軟 X線発生部 1と、 軟 X線発生部 1に高圧ケーブル 3の一端部 が接続され、 多端部がチャンバ 8 aの外部に設置された制御部 2と接続されて構 成されている。 As shown in FIG. 7 (a), a semiconductor inspection apparatus 8 using a soft X-ray irradiator X was provided with a box-shaped chamber 8a having a hollow portion, and provided inside the chamber 8a. a head 8 b into the mouth one tally, the operation available-contact chuck 8 c vertically mounted on head 8 b rotary, attached to the contact chuck 8 c, Shatonore for mounting the semiconductors chips V 8e, a contact part 8f for inspecting the operation of the semiconductor chip V, and one of the chambers 8a so that the inside of the chamber 8 is irradiated with soft X-rays. A soft X-ray generator 1 provided on the side, one end of a high-voltage cable 3 is connected to the soft X-ray generator 1, and a multi-end is connected to a control unit 2 installed outside the chamber 8a. Has been established.
このように構成された半導体の検査装置 8の使用方法について説明する。 第 7 図 （a ) に示すように、 まず、 チャンバ 8 aの一側面に備えられた軟 X線発生部 1から軟 X線を照射し、 チャンバ 8 aの内部の空気をイオン化させる。  A method of using the semiconductor inspection apparatus 8 configured as described above will be described. As shown in FIG. 7 (a), first, soft X-rays are irradiated from a soft X-ray generator 1 provided on one side surface of the chamber 8a to ionize the air inside the chamber 8a.
次に、 検査する半導体チップ Vをシャトル 8 eに載置すると共に、 シャトル 8 eをロータリーヘッド 8 bのコンタクトチャック 8 cに取り付ける。 そして、 口 一タリーへッド 8 bを回転させてコンタクト部 8 f の上方に移動させる。 コンタ クト部 8 f の上方に半導体チップ Vが載置されたシャトル 8 eが到着した後、 コ ンタク トチャック 8 cを下降させシャトル 8 eに載置された半導体チップ Vをコ ンタク ト部 8 f と接続すると共に、半導体チップ Vに通電させて動作確認を行う。 そして、 半導体チップ Vに通電させて動作確認を行ったあと、 コンタクトチヤ ック 8 cを上昇させてコンタクト部 8 f から検査済みの半導体チップ Vが載置さ れたシャトル 8 eを取り外す。 そして、 ロータリーヘッド 8 bを回転させて、 コ ンタク トチャック 8 cを移動させて、 半導体の検査装置 8の検査済み取り出し口 からシャトル 8 eを取り出す。 Next, the semiconductor chip V to be inspected is placed on the shuttle 8e , and the shuttle 8e is attached to the contact chuck 8c of the rotary head 8b. Then, the mouth tally head 8b is rotated and moved to above the contact portion 8f. After the shuttle 8e on which the semiconductor chip V is mounted arrives above the contact portion 8f, the contact chuck 8c is lowered to move the semiconductor chip V mounted on the shuttle 8e to the contact portion 8f. Connect to and power on the semiconductor chip V to check the operation. Then, after energizing the semiconductor chip V to check the operation, the contact chuck 8c is raised, and the shuttle 8e on which the inspected semiconductor chip V is mounted is removed from the contact portion 8f. Then, the rotary head 8b is rotated, and the contact chuck 8c is moved to take out the shuttle 8e from the inspected outlet of the semiconductor inspection apparatus 8.
このような半導体チップ Vの検査工程において、 半導体の検査装置 8や半導体 チップ Vに発生した静電気は、 イオン化された空気によって除電することができ る。 また、検査内容で半導体チップ Vの温度及び装置内部の温度を上昇させた状 態で （5 5 °Cから 1 2 0 °C) 検查を行うことが多くなつており、 高温下での使用 を考え、 半導体の検査装置 8が高温になっても、 軟 X線照射装置 Xの制御部 2が チャンバ 8 aの外部に配置してあるので熱の影響で誤作動や破壊されることがな い。 このため、 軟 X線発生部 1から軟 X線をチャンバ 8 aの内部に照射し、 空気 をイオン化させることができ、 半導体チップ Vに帯電した静電気を除電すること ができる。 特に、 軟 X線発生部 1は、 高温に耐えられるように断熱材を用いて構 成しているので、 軟 X線の光源 1 bが熱で破壊されることがなく、 安定して軟 X 線を照射することができる。  In such a semiconductor chip V inspection process, static electricity generated in the semiconductor inspection device 8 and the semiconductor chip V can be eliminated by ionized air. In addition, inspections are often performed with the temperature of the semiconductor chip V and the internal temperature of the device raised (from 55 ° C to 120 ° C), and use at high temperatures Considering that, even if the temperature of the semiconductor inspection device 8 becomes high, since the control unit 2 of the soft X-ray irradiator X is located outside the chamber 8a, it does not malfunction or break down due to heat. No. Therefore, the soft X-ray generator 1 irradiates soft X-rays to the inside of the chamber 8a to ionize the air, thereby eliminating static electricity charged on the semiconductor chip V. In particular, since the soft X-ray generator 1 is made of a heat insulating material so as to withstand high temperatures, the soft X-ray light source 1 b is not destroyed by heat, and the soft X-ray is stable. The line can be irradiated.
以上より軟 X線照射装置 Xを備えた半導体の検査装置 8は、 チャンバ 8 aの一 側面に設けた軟 X線発生部 1からチャンバ 8 aの內部に向けて軟 X線を照射して 空気をイオン化させることで、 半導体の検査装置 8及び半導体チップ Vに帯電し た静電気を除電することができ、 半導体チップ Vに静電気が放電することによつ て生じる静電気放電破壊を防止することができる。 As described above, the semiconductor inspection apparatus 8 provided with the soft X-ray irradiator X is one of the chambers 8a. By irradiating soft X-rays from the soft X-ray generation unit 1 provided on the side surface to the part of the chamber 8a to ionize the air, static electricity charged on the semiconductor inspection device 8 and the semiconductor chip V is eliminated. This can prevent electrostatic discharge destruction caused by discharging static electricity to the semiconductor chip V.
また、 半導体の検査装置 8を用いて、 半導体 Zの受け渡しをする際に発生する 静電気を距離 1 0 c mで 1 0 0 0 V〜0 Vまで落とす時間が 1 2秒以下の短時間 で除電することで、 静電気放電破壊、 静電気放電による劣化を防止することがで きると共に、 ノイズ対策も同時に行うことができる。  In addition, the static electricity generated when the semiconductor Z is delivered and received using the semiconductor inspection device 8 is removed within a short time of 12 seconds or less, which reduces the static electricity to 100 V to 0 V at a distance of 10 cm. This can prevent electrostatic discharge damage and deterioration due to electrostatic discharge, and can also take measures against noise at the same time.
また、 軟 X線発生部 1の断熱材として、 シリコンゴムを用いたが本発明を限定 するものではなく、 例えば、 ガラス繊維を用いたグラスウール、 セラミック、 フ ェノール等の材料を用いることができる。  Further, as the heat insulating material of the soft X-ray generating unit 1, silicon rubber is used, but the present invention is not limited to this. For example, materials such as glass wool using glass fiber, ceramic, and phenol can be used.
以上、 本発明の一実施の形態について説明したが、 本発明はこのような実施の 形態のみに限定されるものではなく、本発明の技術的思想に基づく限りにおいて、 種々の変形が可能である。  As described above, one embodiment of the present invention has been described. However, the present invention is not limited to such an embodiment, and various modifications are possible as long as it is based on the technical idea of the present invention. .
例えば、 本発明の実施形態では、 軟 X線照射装置 1を半導体の組立装置 7及び 検査装置 8に備える構成を示したが、 本発明を限定するものではなく、 液晶の製 造装置、 液晶の組立装置、 液晶の検査装置等に利用することができ、 帯電した静 電気を除電して静電気放電破壊を防止することができる。  For example, in the embodiment of the present invention, the configuration in which the soft X-ray irradiating apparatus 1 is provided in the semiconductor assembling apparatus 7 and the inspection apparatus 8 has been described. However, the present invention is not limited thereto, and the liquid crystal manufacturing apparatus and the liquid crystal It can be used for assembling equipment, liquid crystal inspection equipment, etc., and can remove charged static electricity to prevent electrostatic discharge destruction.
また、 本発明の実施形態で、 軟 X線照射装置 Xを半導体の組立装置 7及び半導 体の検査装置 8に備える構成を示したが、 特に限定されるものではなく、 軟 X線 照射装置 Xは、 軟 X線発生部 1と制御部 2を別体で構成しているので、 例えば、 既存の半導体の組立装置や検査装置に簡単に取り付けて使用することができる。 さらに、 半導体の組立装置 7及び半導体の検査装置 8に空気を循環させるファ ンを取り付け、 イオン化された空気を循環させるように構成してもよい。 特に、 半導体の検査装置 8のような密閉状態で構成されている場合でも、 イオン化され た空気を内部に循環させることができ、効果的に静電気を除電することができる。 以上説明したように、 本発明の軟 X線照射装置は、 軟 X線を照射する軟 X線発 生部と、 この軟 X線発生部の電源の供給及び制御を行う制御部とを別体に構成す ると共に、 高圧ケーブルで接続する構成にすることで、 軟 X線発生部を小型化さ せることができ、 また、 軟 X線発生部を断熱材で被覆することにより、 高温環境 下でも安定して軟 X線発生部から軟 X線を照射することができる。 Further, in the embodiment of the present invention, the configuration in which the soft X-ray irradiator X is provided in the semiconductor assembling apparatus 7 and the semiconductor inspection apparatus 8 has been described, but the present invention is not particularly limited thereto. Since the soft X-ray generator 1 and the controller 2 are configured separately from each other, the X can be easily attached to, for example, an existing semiconductor assembling apparatus or inspection apparatus. Further, a fan for circulating air may be attached to the semiconductor assembling apparatus 7 and the semiconductor inspection apparatus 8 so as to circulate ionized air. In particular, even in the case of a hermetically sealed state like the semiconductor inspection device 8, the ionized air can be circulated inside, and static electricity can be effectively eliminated. As described above, the soft X-ray irradiator of the present invention includes a soft X-ray generator that irradiates soft X-rays and a controller that supplies and controls power to the soft X-ray generator. The soft X-ray generator can be downsized by using a high-voltage cable. In addition, by covering the soft X-ray generator with a heat insulating material, the soft X-ray generator can stably emit soft X-rays even in a high temperature environment.
また、 本発明の軟 X線照射装置の軟 X線発生部を半導体の組立装置や検査装置 に備えることで、 半導体の組立工程や検査工程で発生する静電気を簡単に除電す ることができると共に、 半導体の組立装置や半導体の検査装置の構成を大きく変 更することなく簡単に取り付けることができる。 産業上の利用可能性  Further, by providing the soft X-ray generator of the soft X-ray irradiator of the present invention in a semiconductor assembling apparatus or an inspection apparatus, static electricity generated in a semiconductor assembling step or an inspection step can be easily eliminated. The semiconductor device can be easily attached without largely changing the configuration of the semiconductor assembling apparatus or the semiconductor inspection apparatus. Industrial applicability
静電放電をきらう半導体の組立装置や検査装置などに、 軟 X線を照射して空気 をイオン化させる除電方法を適用することが容易になる。  It becomes easy to apply a static elimination method that irradiates soft X-rays to ionize air to semiconductor assembly equipment and inspection equipment that are subject to electrostatic discharge.

Claims

請求の範囲 The scope of the claims
1 . 軟 X線を照射する軟 X線発生部と、 前記軟 X線発生部の電源の供給及び制 御を行う制御部とを備える軟 X線照射装置であって、 前記軟 X線発生部と制御部 とが別体で形成され、 一部が高圧ケーブルで接続されていることを特徴とする軟1. A soft X-ray irradiator comprising: a soft X-ray generator that irradiates soft X-rays; and a controller that supplies and controls power of the soft X-ray generator. And a control unit are formed separately, and a part is connected by a high-voltage cable.
X線照射装置。 X-ray irradiator.
2 . 前記軟 X線発生部は、 断熱材で被覆されていることを特徴とする請求の範 囲第 1項に記載の軟 X線照射装置。 2. The soft X-ray irradiator according to claim 1, wherein the soft X-ray generator is covered with a heat insulating material.
3 . 前記断熱材は、 シリコンゴムを用いることを特徴とする請求の範囲第 2項 に記載の軟 X線照射装置。 3. The soft X-ray irradiation apparatus according to claim 2, wherein the heat insulating material uses silicon rubber.
4 . 請求の範囲第 1項から第 3項のいずれか 1項に記載の軟 X線照射装置を備 える半導体の組立装置であって、 前記軟 X線照射装置と、 半導体のボンディング パットとリードを結線するキヤビラリと、 前記半導体を搬送する搬送手段とを備 え、 前記軟 X線発生部から軟 X線を照射し、 前記半導体及び前記組立装置に帯電 した静電気の除電を行うことを特徴とする半導体の組立装置。 4. A semiconductor assembling apparatus provided with the soft X-ray irradiator according to any one of claims 1 to 3, wherein the soft X-ray irradiator, a semiconductor bonding pad and a lead are provided. And a transfer means for transferring the semiconductor, irradiating soft X-rays from the soft X-ray generation unit to eliminate static electricity charged on the semiconductor and the assembly device. Semiconductor assembling equipment.
5 . 請求の範囲第 1項から第 3項のいずれか 1項に記載の軟 X線照射装置を備 える半導体の検査装置であって、 中空部を有し箱型に形成されたチャンバと、 こ のチヤンバの内部に設けられ半導体の検査を行う検査手段と、 前記半導体の搬送 を行う搬送手段を備え、前記チャンバの一側面に前記軟 X線照射装置の軟 X線発 生部とを備えると共に前記チャンバの内部に軟 X線を照射し、 前記検査手段及び 前記半導体に帯電した静電気を除電することを特徴とする半導体の検査装置。 5. A semiconductor inspection apparatus provided with the soft X-ray irradiation apparatus according to any one of claims 1 to 3, wherein the chamber has a hollow portion and is formed in a box shape; An inspection means provided inside the chamber for inspecting a semiconductor, a transport means for transporting the semiconductor, and a soft X-ray generator of the soft X-ray irradiator are provided on one side surface of the chamber. A semiconductor X-ray irradiating means for irradiating the inside of the chamber with soft X-rays to eliminate static electricity charged in the inspection means and the semiconductor.
PCT/JP2004/008666 2003-06-13 2004-06-14 Soft x-ray applying apparatus, semiconductor assembling apparatus, and inspecting instrument WO2004112445A1 (en)

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