WO2004109767A3 - High performance polycrystalline transistors - Google Patents

High performance polycrystalline transistors Download PDF

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Publication number
WO2004109767A3
WO2004109767A3 PCT/US2004/018220 US2004018220W WO2004109767A3 WO 2004109767 A3 WO2004109767 A3 WO 2004109767A3 US 2004018220 W US2004018220 W US 2004018220W WO 2004109767 A3 WO2004109767 A3 WO 2004109767A3
Authority
WO
WIPO (PCT)
Prior art keywords
high performance
semiconductors
class
channel region
performance polycrystalline
Prior art date
Application number
PCT/US2004/018220
Other languages
French (fr)
Other versions
WO2004109767A2 (en
Inventor
Eric S Harmon
David B Salzman
Jerry M Woodall
James T Hyland
Robert Koudelka
Original Assignee
Univ Yale
Eric S Harmon
David B Salzman
Jerry M Woodall
James T Hyland
Robert Koudelka
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Yale, Eric S Harmon, David B Salzman, Jerry M Woodall, James T Hyland, Robert Koudelka filed Critical Univ Yale
Publication of WO2004109767A2 publication Critical patent/WO2004109767A2/en
Publication of WO2004109767A3 publication Critical patent/WO2004109767A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors

Abstract

The invention teaches new uses for a class of polycrystalline semiconductors and highly defected semiconductors, particularly in the channel region (407) of a thin-film field-effect transistor (TFT) using a confinement region (405) to increase the mobility of the charges carriers in the channel region. The invention also discloses methods used to design and fabricate high performance electronic devices using semiconductors from said class.
PCT/US2004/018220 2003-06-02 2004-06-02 High performance polycrystalline transistors WO2004109767A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US47533703P 2003-06-02 2003-06-02
US60/475,337 2003-06-02

Publications (2)

Publication Number Publication Date
WO2004109767A2 WO2004109767A2 (en) 2004-12-16
WO2004109767A3 true WO2004109767A3 (en) 2006-02-02

Family

ID=33511665

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/018220 WO2004109767A2 (en) 2003-06-02 2004-06-02 High performance polycrystalline transistors

Country Status (1)

Country Link
WO (1) WO2004109767A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015026371A1 (en) * 2013-08-23 2015-02-26 Intel Corporation High resistance layer for iii-v channel deposited on group iv substrates for mos transistors
KR102309747B1 (en) * 2013-08-30 2021-10-08 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 Ingaaln-based semiconductor element

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4727403A (en) * 1985-04-08 1988-02-23 Nec Corporation Double heterojunction semiconductor device with injector
US5298441A (en) * 1991-06-03 1994-03-29 Motorola, Inc. Method of making high transconductance heterostructure field effect transistor
US5461250A (en) * 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
US20020074548A1 (en) * 2000-10-31 2002-06-20 Pt Plus Co. Ltd. Thin film transistor including polycrystalline active layer and method for fabricating the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4727403A (en) * 1985-04-08 1988-02-23 Nec Corporation Double heterojunction semiconductor device with injector
US5298441A (en) * 1991-06-03 1994-03-29 Motorola, Inc. Method of making high transconductance heterostructure field effect transistor
US5461250A (en) * 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
US20020074548A1 (en) * 2000-10-31 2002-06-20 Pt Plus Co. Ltd. Thin film transistor including polycrystalline active layer and method for fabricating the same

Also Published As

Publication number Publication date
WO2004109767A2 (en) 2004-12-16

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