WO2004097936A1 - Dispositif de gestion thermique cellulaire et procédé de fabrication du dispositif - Google Patents

Dispositif de gestion thermique cellulaire et procédé de fabrication du dispositif Download PDF

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Publication number
WO2004097936A1
WO2004097936A1 PCT/GB2004/001873 GB2004001873W WO2004097936A1 WO 2004097936 A1 WO2004097936 A1 WO 2004097936A1 GB 2004001873 W GB2004001873 W GB 2004001873W WO 2004097936 A1 WO2004097936 A1 WO 2004097936A1
Authority
WO
WIPO (PCT)
Prior art keywords
cavity
heat
thermal management
pipe
heat transfer
Prior art date
Application number
PCT/GB2004/001873
Other languages
English (en)
Inventor
Antony Arthur Carter
Rui De Oliveira
Original Assignee
Queen Mary & Westfield College
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Queen Mary & Westfield College filed Critical Queen Mary & Westfield College
Publication of WO2004097936A1 publication Critical patent/WO2004097936A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D2015/0225—Microheat pipes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates -to a thermal management device for managing the dissipation of heat in, for example, electronic equipment and a method of making such a device.
  • the invention relates to a thermal management device having improved heat transfer capabilities.
  • some known devices encapsulate high thermal conductivity materials into composite structures.
  • these devices often achieve only limited performance, with significant conductivity losses, typically 40%, and increases in mass and bulk.
  • thermal management systems are often used as substrates for supports for hybrid electronic circuits.
  • beryllia is used as a heat sink. This has a thermal conductivity of around 280W/mK at room temperature.
  • gold contacts are subsequently formed, thereby to enable connection to other electrical circuits.
  • a disadvantage of this arrangement is that beryllia is a hazardous material; in fact it is carcinogenic, and is generally difficult to process.
  • the dielectric tends to be thick thereby making the overall structure bulky. Furthermore, partly because of the use of gold as a contact material, the overall structure is expensive to manufacture.
  • a plate of anisotropic carbon for example pyrolitic graphite or thermalised pyrolitic graphite is encapsulated in an encapsulating material such as polyimide or epoxy resin or acrylic or polyurethane or polyester or any other suitable polymer.
  • the encapsulating material is applied directly to the anisotropic carbon and improves the rigidity of the carbon.
  • the resulting device has an in-plane thermal conductivity of typically l,700W/mK at room temperature whilst it can provide a flatness at typically plus or minus 5 ⁇ m across a plate that is 100mm by 100mm.
  • the device can provide a board having a tensile strength that is significantly higher than that of the original, unencapsulated, carbon plate with a negligible increase in volume and loss of thermal conductivity.
  • New and future generations of semi-conductors provide a major challenge for thermal management through having localised areas with excessive power density (hot-spots) where transient temperatures far exceed those safely accessible to conventional packaging techniques. For example increasing power densities and operation frequencies can arise from specific areas of high performance switching inside a given chip that effectively acts as point-like heat sources. As a result yet further improved thermal management devices are required.
  • a thermal management device of anisotropic carbon encapsulated in an encapsulating material for example in the form of a cavity defining a heat-pipe or cooling tube
  • buffering is provided that decreases transient temperatures, for example in a chip and its associated packaging materials, and overall heat flow parameters in surrounding materials are also improved providing conditions for continuous operation that do not compromise either the performance or reliability of a device such as a semiconductor.
  • Fig. 1 is a side view of a thermal management device defining part of a cavity
  • Fig. 2 is a sectional view of two mirror-image thermal management devices of the type shown in Fig. 1 defining a cavity;
  • Fig. 3 is a sectional view of the arrangement of Fig. 2 further having a heat- pipe installed in the cavity;
  • Fig. 4 is a sectional view in a direction A-A of the device shown in Fig. 3;
  • Fig. 5 is a plan view showing alternative cavity configurations in a thermal management device
  • Fig. 6 is a sectional view of a thermal management device with a drilled cavity
  • Fig. 7 is a sectional view of the thermal management of Fig. 6 with a heat-pipe installed
  • Fig. 8 is a sectional view taken along the line A-A in Fig. 3 showing an embodiment including a heat-sink; and Fig. 9 is a sectional view of a thermal management device with a semiconductor device mounted thereon.
  • a localised enhanced heat transfer region comprises a cavity provided in a thermal management device in the form of a heat-pipe or cooling tube.
  • the thermal management device comprises a plate of anisotropic carbon encapsulated in a suitable polymer in which the cavity is formed by cutting complementary grooves into mirror image half-plate devices which are then bonded together to mate the grooves.
  • the cavity is drilled through the thermal management device.
  • the cavity can intrinsically form a heat-pipe or cooling tube or a pre-fabricated heat-pipe or cooling tube can be inserted into the cavity.
  • the essentially passive planar structure provided by a thermal management device of the type described has enhanced internal heat transfer properties provided by active mono-phase (in the case of cooling fluid in a cooling tube) or bi-phase (in the case of a heat-pipe) systems.
  • Customised designs can be provided benefiting from the extremely high diffusivity of the thermal management device minimising temperature gradients within the structure combined with the directional heat flow of the localised enhanced heat transfer region.
  • a plate of thermalised pyrolitic graphite with mosaic or full ordering is coated with polyimide applied directly to the carbon surface for example using a brush. If necessary the coating is cured. Where required holes for electrical contact are formed for example by drilling prior to the coating step, encapsulating the drilled plate and then re-drilling the holes to a smaller diameter such that the carbon remains encapsulated.
  • the device can be applied to a substrate or used itself as a substrate for example for thin film circuits which can be deposited in any appropriate manner. Both sides of the device can be used and the device can form a base or substrate for a multi-layer circuit.
  • the thermal management device is thus constructed by direct molecular-level encapsulation of the carbon plate allowing interfacing with other heat transfer materials through micron-level fusing and providing an electronic hybrid technology allowing both single and double-side connectivity.
  • the intrinsic thermal performance of the internal carbon substrate is preserved and thermal transfer characteristics expressed in the relevant parameter k/p (Thermal conductivity/density) are improved with respect to copper by a factor of between 18 to 20 and aluminia by nearly 90. At sub-zero temperatures the improvement factors can be dramatically increased further.
  • the encapsulation layers are typically 20 microns and so for substrates of a thickness of a few hundred microns larger this represents a negligible increase in total volume and hence a negligible decrease in thermal conductivity preserving the fundamental thermal properties of the carbon plate whilst enhancing the mechanical properties such as sheer strength and surface integrity.
  • the device provides robust structures with mechanical stability whilst maintaining low density and high in-plane thermal conductivity and a range of direct electrical processing to provide a new sector of high thermal conductivity hybrids.
  • Thermal management structures of the type described above form the basis of the cellular thermal management structures in the present embodiment as shown in more detail in the accompanying drawings which illustrate various approaches to fabricating a thermal management device with enhanced heat transfer properties.
  • a thermal management device designated generally 10 includes an anisotropic graphite plate 12 and a polyimide encapsulating coat 14. Prior to coating the plate 12 a cavity in the form of a channel or groove 16 is cut or otherwise formed in the plate 12 extending across the length of the surface. Referring to Fig. 2 a corresponding groove is cut into a second plate 20 and the plates are attached together to form a cavity 22.
  • the groove 16 can be cut, etched or otherwise formed into the plate 12 and the coating 14 applied as described above.
  • the groove 16 can be of any profile for example semi-circular in cross section (so as to provide a circular cavity 20 as shown in Fig. 2 when the two plates are mated) or a more complex cross section.
  • One or both of the plates 10, 20 can be encapsulated anisotropic carbon and neither the plates nor the grooves need be symmetrical as long as the grooves mate to form a common channel.
  • the two plates 10, 20 are epoxy-fused to provide an appropriate bonding, but any appropriate bonding technique may be used.
  • the localised enhanced heat transfer region can be formed from the cavity in various manners.
  • the channel 22 in Fig. 2 forms a conduit for direct flow mono-phase heat transfer fluid hence forming a cooling tube.
  • the channel 22 can form a bi-phase heat-pipe of the type described in more detail below which is made "self-wicking" in an appropriate known manner for example by forming an appropriate profile on the inner surface of the channel 22 in the form of narrow axially extending fins providing the required capillary action. If such an in-situ heat-pipe is formed it is filled with a given mass of an appropriate fluid by evaporation under vacuum and then the cavity is sealed, again as will apparent to the skilled reader.
  • the cavity 22 non-porous and so an additional coating step is introduced, for example using continuous vapour deposition, to provide a layer of vitreous carbon providing the required non- porosity or providing any other appropriate non-porous coating.
  • an additional coating step is introduced, for example using continuous vapour deposition, to provide a layer of vitreous carbon providing the required non- porosity or providing any other appropriate non-porous coating.
  • the remainder of the plate 12 can alternatively be coated prior to the cutting step in this case and that an additional coating to the non-porous coating is not required in order to encapsulate the cavity.
  • the non-porous coating can be used to encapsulate the entire device in a single coating step.
  • the process of epoxy-fusing the half-plates 10 and 20 it is desirable to fill the cavity between the plates with metal to avoid entry of epoxy.
  • the metal can be removed by etching to provide an enclosed cavity that can if necessary also be cleaned by chemical action avoiding degradation from ingress of epoxy.
  • the heat pipe or cooling tube can be located prior to fusing the half plates to provide a barrier to epoxy ingress. This approach is particularly advantageous for cavities having a tortuous configuration in which it could be difficult to insert the pipe/tube after bonding the half-plates.
  • An alternative manner of forming the localised enhanced heat transfer region is shown in Fig.
  • a pre-fabricated heat-pipe 24 of an appropriate profile to match the cavity 22 is inserted into the cavity and epoxy-fused or bonded in any other appropriate manner.
  • the heat-pipe 24 can be inserted to one of the half plates 10 prior to mating with the other half plate 20, or can be inserted into the cavity formed when the two half plates 10 and 20 have already been mated and epoxy-fused.
  • the former approach has the advantage that the heat- pipe prevents the ingress of epoxy during the epoxy-fusing step mating the two half plates together.
  • a cooling tube allowing fluid-flow cooling can be inserted in a similar manner.
  • the encapsulating coat can be applied before or after the cutting step, and the cavity does not require additional coating, as it is effectively encapsulated by the wall of the pipe or tube and epoxy fixing.
  • Fig. 4 it will be seen that in one embodiment the heat-pipe or cooling tube 24 extends beyond the perimeter of the device. Of course just one or neither end may extend beyond the device in an alternative configuration. In a further alternative configuration the heat-pipe or cooling tube 24 is entirely enclosed in the cavity in a manner allowing an appropriate level of heat transfer.
  • FIG. 5 More complex cavity configurations and multiple cavities are shown in Fig. 5 and it will be seen that complex shapes can be adopted.
  • the cavities thus formed can extend the full length of the surface between any two faces or the same face, or can be contained within the surface either at one or both ends.
  • branched cavities and more complex configurations still can be incorporated.
  • the cavities can either act intrinsically as cooling tubes or self-wicking heat-pipes or pre-fabricated cooling tubes or heat-pipes of appropriate configuration can be inserted, and the fabrication method is selected dependent on the configuration.
  • a heat-pipe comprises a hollow cylinder closed at both ends and with a porous wall providing capillary action forming a "wick".
  • a heat transfer fluid such as methanol is absorbed by the wick.
  • vapour condenses once again at a cooler region and gives up the latent heat of vaporisation hence transferring the heat from the hotter to the cooler region.
  • "self-wicking" is provided in which a grooved tube having axial grooves provides the capillary action required to transfer the fluid back from the cooler region to the hotter region.
  • Heat-pipes are found to provide significantly higher heat transfer properties than equivalent metallic conductors such as a block of copper.
  • the cooling tube discussed above effectively provides a conduit for heat transfer fluid and can form part of a conventional cooling loop.
  • FIG. 6 A second approach to fabricating a thermal management device with enhanced heat transfer characteristics is shown in Fig. 6 in which a hole 28 is drilled in the plate 10.
  • the hole may be formed prior to the coating step and coated with the remainder of the device or subsequently and independently coated.
  • the cavity 28 can form a cooling tube or self-wicking heat-pipe in the manner described above, again with a suitable non-porous coating if required.
  • the hole may as appropriate be mechanically or laser drilled or alternatively be moulded or otherwise formed and it is found that a self-wicking profile is advantageously obtained using laser cutting. It will be appreciated that more complex configurations may be better accommodated by the approach described with reference to Figs. 1 to 5.
  • a heat-pipe or cooling tube 30 is inserted into the cavity 28 and interfaced with a thin epoxy film, again as discussed in more detail above.
  • the drilled hole 28 can be blind (in the case of heat-pipes) or can be open at both ends and can be of any configuration within the constraints of the forming technique and the requirement for inserting the pre-fabricated heat- pipe or cooling tube, or forming a self-wicking inner surface for an in-situ heat- pipe.
  • the encapsulating steps can be performed at any appropriate time in a manner similar to that discussed in relation to Figs. 1 to 5.
  • Figs 8 and 9 The manner in which the cellular thermal management structure is attached to additional components is shown in Figs 8 and 9.
  • enhanced heat extraction capabilities are provided by including a heat sink 32.
  • the condensation end of a heat-pipe 24 is placed in thermal contact with the heat sink 32 which is provided flush with the heat extraction surface of the device 10 and bonded in any appropriate manner for example epoxy-fusing or high temperature brazing.
  • the surface of the heat- pipe 24 may be bonded to the wall of drilled hole 24.
  • a suitable surface for brazing may be provided by coating with metal layers of thickness ranging from a few microns up to tens of microns using a chemical deposition process, electro-plating, sputtering or a similar process.
  • the coating can be made as a single layer of a metal, multiple sandwiched layers of the same or different metals, a combination of different metals or of an alloy. It can comprise two or more sub-layers, each produced by one or more of the above techniques.
  • the metal layer can be masked with the desired pattern for the final metal configuration, and metal removed from the unwanted areas region by etching, such that the desired areas of the heat extraction surface of the device 10 and/or the wall of the drilled hole 28 are covered with a metal layer.
  • the heat sink can be any appropriate device such as a cold-mass, a cooling fin assembly, an externally cooled structure using fluid flow pipes and so forth.
  • the heat sink can be provided in thermal contact with a structure extending beyond the surface of the device 10, providing for example cooling capabilities to cooling fluid flowing through a cooling tube.
  • a device 34 to be cooled comprises a semi-conductor device which is bonded in any appropriate manner, for example epoxy-fusing, to form a surface sealed cellular thermal management structure.
  • the device 34 is positioned relative to the cavity 22 in the thermal management device 10 which can provide localised enhanced heat transfer in any of the manners described above, for example by insertion of a further, suitably profiled pre-fabricated heat-pipe or by intrinsic action of the cavity 22 as a heat-pipe or cooling tube.
  • the under surface of the device 34 becomes part of the cooling structure forming one face adjacent or closing the cavity.
  • the thermal management device described herein can provide customised solutions to the requirements of devices with very high power density and operation frequencies as well as localised hot-spots including the option of direct contact between the semi-conductor and active cooling elements of the device whilst maintaining the significant thermal transport features of the underlying device, including use as electronic hybrid structures.
  • the properties of the device are particularly advantageous for optimising the in-situ performance of micro heat-pipes.
  • Such pipes can have properties that can be characterised by thermal conductivities in excess of 10,000W/mK, limited only by the allowed cross-sectional area, length and wicking, as well as by the thermo-dynamic properties of the evaporating/condensing liquid.
  • heat transfer of around 0.3W might be achieved given appropriate start-up conditions for each heat-pipe cycle and provision of operating temperatures well below the boiling limit of the evaporating/condensing liquid.
  • thermal management device to semi-conductor packaging
  • the device can be equally well used in any appropriate cooling/heat-transfer environment and in combination with any of the optimisations discussed in WO00/03567.
  • Discussion of heat-pipes extends to derivatives thereof such as loop heat-pipes and any other structures using the basic properties of heat-pipes, and discussion of the cavity comprising the localised enhanced heat transfer region extends to any groove, recess, aperture or hole providing the required properties.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

La présente invention concerne une structure de gestion thermique cellulaire qui comprend une plaque (10, 20) de carbone anisotrope encapsulé dans du polyimide (14), avec des caloducs ou des tubes de refroidissement (24) qui traversent le dispositif afin de fournir un transfert de chaleur localisé amélioré.
PCT/GB2004/001873 2003-05-01 2004-04-30 Dispositif de gestion thermique cellulaire et procédé de fabrication du dispositif WO2004097936A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0310095 2003-05-01
GB0310095.5 2003-05-01

Publications (1)

Publication Number Publication Date
WO2004097936A1 true WO2004097936A1 (fr) 2004-11-11

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8034451B2 (en) 2005-12-02 2011-10-11 Morganite Electrical Carbon Limited Carbon materials
EP2960565A1 (fr) * 2014-06-27 2015-12-30 Günter Gasser GmbH Dispositif de traitement de fluides
CN112193055A (zh) * 2020-10-13 2021-01-08 西安电子科技大学芜湖研究院 一种高效散热的汽车热管理系统
WO2024085051A1 (fr) * 2022-10-17 2024-04-25 京セラ株式会社 Substrat de dissipation de chaleur et dispositif de dissipation de chaleur
WO2024085050A1 (fr) * 2022-10-17 2024-04-25 京セラ株式会社 Substrat de dissipation de chaleur et dispositif de dissipation de chaleur

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4838346A (en) * 1988-08-29 1989-06-13 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Reusable high-temperature heat pipes and heat pipe panels
DE4130976A1 (de) * 1991-09-18 1993-03-25 Sippel Rudolf Heat-pipe
WO2000003567A1 (fr) * 1998-07-08 2000-01-20 European Organization For Nuclear Research Dispositif de traitement thermique et procede de fabrication associe

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4838346A (en) * 1988-08-29 1989-06-13 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Reusable high-temperature heat pipes and heat pipe panels
DE4130976A1 (de) * 1991-09-18 1993-03-25 Sippel Rudolf Heat-pipe
WO2000003567A1 (fr) * 1998-07-08 2000-01-20 European Organization For Nuclear Research Dispositif de traitement thermique et procede de fabrication associe

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8034451B2 (en) 2005-12-02 2011-10-11 Morganite Electrical Carbon Limited Carbon materials
EP2960565A1 (fr) * 2014-06-27 2015-12-30 Günter Gasser GmbH Dispositif de traitement de fluides
CN112193055A (zh) * 2020-10-13 2021-01-08 西安电子科技大学芜湖研究院 一种高效散热的汽车热管理系统
CN112193055B (zh) * 2020-10-13 2021-09-21 西安电子科技大学芜湖研究院 一种高效散热的汽车热管理系统
WO2024085051A1 (fr) * 2022-10-17 2024-04-25 京セラ株式会社 Substrat de dissipation de chaleur et dispositif de dissipation de chaleur
WO2024085050A1 (fr) * 2022-10-17 2024-04-25 京セラ株式会社 Substrat de dissipation de chaleur et dispositif de dissipation de chaleur

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