WO2004095662A2 - Ingenierie de structure de bande - Google Patents

Ingenierie de structure de bande Download PDF

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Publication number
WO2004095662A2
WO2004095662A2 PCT/GB2004/001727 GB2004001727W WO2004095662A2 WO 2004095662 A2 WO2004095662 A2 WO 2004095662A2 GB 2004001727 W GB2004001727 W GB 2004001727W WO 2004095662 A2 WO2004095662 A2 WO 2004095662A2
Authority
WO
WIPO (PCT)
Prior art keywords
quantum well
regions
integrated circuit
bandgap
photonic integrated
Prior art date
Application number
PCT/GB2004/001727
Other languages
English (en)
Other versions
WO2004095662A3 (fr
Inventor
Yee Loy Lam
Yuen Chuen Chan
Original Assignee
Denselight Semiconductors Pte Ltd
Finnie, Peter, John
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denselight Semiconductors Pte Ltd, Finnie, Peter, John filed Critical Denselight Semiconductors Pte Ltd
Publication of WO2004095662A2 publication Critical patent/WO2004095662A2/fr
Publication of WO2004095662A3 publication Critical patent/WO2004095662A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/182—Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Definitions

  • the present invention relates to a technique for bandgap engineering in the fabrication of photonic integrated circuits and in particular, a technique for achieving both large regional bandgap differences and fine control of more local differences.
  • PICs photonic integrated circuits
  • Monolithic PICs involve the integration of both active devices, such as laser diodes and photodetectors, and passive devices, such as waveguides, couplers and spot-size converters.
  • active devices such as laser diodes and photodetectors
  • passive devices such as waveguides, couplers and spot-size converters.
  • the energy bandgap of the material must be varied locally to meet the requirement of the device.
  • the energy bandgap of a passive device should be made larger than the laser source so as to realize low optical absorption loss.
  • the energy bandgap of a monitoring photodetector will have to be matching or smaller than that of the laser source to obtain high responsivity.
  • the wafer undergoes repeated cycles of growth, lithographic patterning and etching before the next growth step over the patterned wafer.
  • this growth and regrowth technique is laborious, it nevertheless remains the most commonly used technique.
  • a second technique uses selective area epitaxy to achieve modification of the bandgap.
  • a dielectric mask is patterned onto a wafer, leading to growth only on the exposed regions. By varying the width and separation of such dielectric films, it is possible to control the thickness of the epitaxial layers grown in between the dielectric mask, since the source atoms migrate from the dielectric mask towards the edge to the semiconductor surface.
  • QWI quantum well intermixing
  • vacancy defects are introduced into the semiconductor crystal lattice to promote interdiffusion of atoms between the quantum well and barrier layers.
  • a consequence of the intermixing process is that the rectangular shaped quantum well profile becomes graded and the effective bandgap of the intermixed quantum well is increased.
  • the intermixing process is usually followed by an annealing step to restore good crystallinity to the semiconductor.
  • Such techniques include employing impurities (as in impurity-induced disordering), dielectric films (as in impurity-free vacancy disordering), laser light (as in laser induced disordering) and plasma.
  • Quantum well intermixing as a post-growth bandgap tuning technique is both simple and relatively easy to control.
  • the QWI process is typically performed on the full device structure, which may comprise multiple epitaxial layers such as cladding and waveguide, contact layer, p-doped cladding, undoped active waveguide and n-doped cladding.
  • Figure 1 shows such a structure after complete epitaxial growth.
  • a quantum well based optical waveguide is normally situated more than a micron below the surface, vacancies have to be generated and diffused all the way down to the quantum well layers.
  • the wavelength shift realizable in QWI is determined primarily by the material bandgap energy difference between the quantum well and barrier layers.
  • a bandgap shift of 200nm is achievable for quantum well structures emitting at 1.55 ⁇ m.
  • the achievable bandgap shift is much reduced for similar InGaAsP based quantum well structures emitting at 1.31 ⁇ m, a result of material composition constraints for the quantum well and barrier layers. Consequently, it is very difficult to integrate devices operating over a wide wavelength range by simply using quantum well intermixing. This is particularly true where the devices are intended for use within different ITU telecommunications bands such as the short (S), centre (C) and long (L) wavelength bands, each of which span some 5 THz.
  • a method of fabricating a photonic integrated circuit on a wafer comprises the steps of: forming a base structure having a layer with a first bandgap energy, at least a portion of the base structure including a quantum well; removing regions of the base structure by photolithography, masking and etching; performing regrowth in said regions to form material with a second bandgap energy, at least a portion of said regions including a quantum well; and, performing quantum well intermixing on portions of the wafer to tune the local bandgap energy.
  • a photonic integrated circuit can be fabricated on a wafer, wherein epitaxial layers of different composition are formed on separate regions of the wafer with the intention that the energy bandgaps of the different regions are optimised for a different centre wavelength.
  • Quantum well intermixing of those parts of the structure that contain quantum wells allows localised fine tuning of the bandgap, either to correct for inaccuracies during deposition or growth, or intentionally to detune the bandgap to achieve a certain functionality such as greater transparency or responsivity.
  • the step of performing quantum well intermixing is preceded by the further steps of: removing regions of the wafer structure by photolithography, masking and etching; and, performing regrowth in said regions to form material with a third bandgap energy, at least a portion of said regions including a quantum well.
  • the final layers of the structure may be formed either before or after the quantum well intermixing step.
  • the QWI process is more difficult to perform afterwards because of the penetration depth required.
  • the method further comprising the step of forming one or more upper layers of the photonic integrated circuit after performing the step of quantum well intermixing.
  • the upper layers include at least one of a cladding layer and a contact layer.
  • the base structure is formed by metal-organic chemical vapour deposition (MOCVD).
  • the base structure may be formed by molecular beam epitaxy (MBE).
  • the step of QWI may be performed either sequentially on individual regions of the wafer or in a single step on the whole wafer, thereby simultaneously intermixing all regions of the wafer that contain quantum wells.
  • QWI is simultaneously performed on all regions of the wafer that contain quantum wells.
  • the degree of quantum well intermixing is determined by the thickness of a mask applied to the wafer.
  • a mask of variable thickness may be used to achieve the required local degree of intermixing.
  • the QWI process can be used to fine-tune the local bandgap energy, shifting the corresponding wavelength.
  • the bandgap energy of a region of the photonic integrated circuit is blue shifted by quantum well intermixing.
  • the QWI process may also be employed to smooth refractive index discontinuities between a quantum well region and an adjacent region, thereby reducing unwanted reflections at the interface.
  • the adjacent region may be another quantum well region or simply comprise bulk material, as might be used for a passive waveguide.
  • a photonic integrated circuit fabricated according to the first aspect of the present invention.
  • the photonic circuit may be designed so those components operating at approximately one centre wavelength are grouped in a different region to those operating at a different centre wavelength. For example, components in two separate regions may be designed to operate at a wavelength in the telecommunications C band and S band, respectively.
  • regions of the photonic integrated circuit with the first bandgap energy operate at a first predetermined optical wavelength and regions with the second bandgap energy operate at a second predetermined optical wavelength.
  • QWI may be used for localised fine-tuning of the bandgap. This may be either to correct for inaccuracies during deposition or growth, or intentionally to detune the bandgap so as to achieve certain functionality such as greater transparency or responsivity.
  • sub-regions of the first and second regions of the photonic integrated circuit are quantum well intermixed to form photonic devices selected from a group that includes: laser diode, optical amplifier, optical modulator, photodetector, optical switch and passive waveguide.
  • the photonic integrated circuit can be implemented using a variety of well- known material systems.
  • the photonic integrated circuit is formed from the quaternary Indium Gallium Arsenide Phosphide (InGaAsP) material system.
  • InGaAsP Indium Gallium Arsenide Phosphide
  • Figure 1 illustrates the structure of a typical InGaAsP photonic device containing a multiple quantum well; and, Figure 2 shows the device of Figure 2 before fabrication of the upper cladding and contact layers.
  • the present invention provides a method of achieving large localized bandgap energy differences at the wafer-level scale through a combination of quantum well intermixing and regrowth processes. Through this technique both large energy bandgap differences, as well fine bandgap control, can be realized on the same wafer.
  • the layout of the photonic integrated circuit Prior to fabrication the layout of the photonic integrated circuit is designed so as to organise regions with the desired wide range of bandgaps into groups.
  • the different groups will be fabricated by epitaxial growth, whereas constituent bandgaps within each group will be determined by quantum well intermixing.
  • the base device structure is grown by metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) and will include a first quantum well structure designed for a first energy bandgap group.
  • MOCVD metal-organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • Photolithography is used to expose the regions where another energy bandgap group is desired.
  • Semiconductor etching through a dielectric mask is performed to remove the existing quantum well structure.
  • Selective regrowth is regions not masked allows the formation of a new set of quantum well structures with a second energy bandgap. If required, the above process of etching and regrowth can be repeated to fabricate further groups of regions with other energy bandgaps.
  • the device structure could be completed up to the upper layers, including the cladding and contact layers, as shown in Figure 1.
  • fabrication of the base structure could stop just above the light confining waveguide layers as shown in Figure 2.
  • the disadvantage of base growth up to the cladding and contact layers, as in Figure 1 is that subsequent regrowth would need to be carried out to replace the cladding and contact layers that were etched away prior to the regrowth. Good continuity of these layers then requires careful control of the regrowth process.
  • the base growth were only carried out up to the waveguide layers of Figure 2, the subsequent regrowth would also only need to be implemented up to the waveguide layers with the new quantum well structure.
  • the substrate would only require one final regrowth over the whole wafer, with any dielectric mask removed, to fabricate the cladding and contact layers.
  • the next process is to carry out quantum well intermixing onto the wafer so as to realize fine control of a localized bandgap shift.
  • the resulting shift in energy bandgap equates to a blue shift in the corresponding wavelength.
  • the differing local bandgaps can be engineered simultaneously. Control of the local amount of bandgap shift is achieved by selecting the degree of quantum well intermixing to be implemented. For certain techniques of quantum well intermixing, such as that by ion implantation, the degree of intermixing can be determined by the thickness of an implantation mask deposited on top of wafer.
  • quantum well intermixing carried out in the interface region between two sets of quantum well structures can reduce the refractive index discontinuity at the interface. This will minimize the back-reflection from such an interface when light propagates through it.
  • quantum well intermixing allows the realization of various functional devices, including amplifier, modulator and detector, operating within each of these bands. Different groups of devices can operate around different centre wavelengths, with individual devices, bandgap engineered for optimal performance. Quantum well intermixing can also help to reduce reflections at interfaces as light propagates from one device to another and from one section to another.

Abstract

Cette invention se rapporte à un procédé permettant d'obtenir une grande largeur de bande interdite localisée à l'échelle de la tranche, avec un réglage fin de la largeur de bande, grâce à une combinaison entre des techniques de reformation et de mélange des puits quantiques. Cette technique permet de fabriquer un circuit intégré photonique sur une tranche de semi-conducteurs, technique dans laquelle des couches épitaxiales de composition différente sont formées sur des zones séparées, en vue d'optimiser la largeur de bande interdite associée à une longueur d'onde centrale différente. Le mélange des puits quantiques de la partie de la structure qui contiennent les puits quantiques permet un réglage fin localisé de la largeur de bande, soit pour corriger les imprécisions pendant les opérations de dépôt ou de croissance soit, de façon intentionnelle pour dérégler la largeur de bande, en vue d'atteindre une certaine fonctionnalité, par exemple une plus grande transparence ou une plus grande réactivité.
PCT/GB2004/001727 2003-04-23 2004-04-23 Ingenierie de structure de bande WO2004095662A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0309228.5 2003-04-23
GB0309228A GB0309228D0 (en) 2003-04-23 2003-04-23 Bandgap engineering

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WO2004095662A2 true WO2004095662A2 (fr) 2004-11-04
WO2004095662A3 WO2004095662A3 (fr) 2005-03-24

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103762158A (zh) * 2014-01-23 2014-04-30 中国科学院半导体研究所 利用激光微区等离子体诱导量子阱混和的方法
US9372306B1 (en) 2001-10-09 2016-06-21 Infinera Corporation Method of achieving acceptable performance in and fabrication of a monolithic photonic integrated circuit (PIC) with integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL)
US20180175587A1 (en) * 2015-06-04 2018-06-21 Hewlett Packard Enterprise Development Lp Monolithic wdm vcsels with spatially varying gain peak and fabry perot wavelength
US10012797B1 (en) 2002-10-08 2018-07-03 Infinera Corporation Monolithic photonic integrated circuit (PIC) with a plurality of integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL)
EP3745471A1 (fr) * 2019-05-31 2020-12-02 OSRAM Opto Semiconductors GmbH Procédé de traitement au laser d'une tranche semi-conductrice comprenant des del algainp pour augmenter leur efficacité de génération de lumière
CN114371047A (zh) * 2020-10-14 2022-04-19 石家庄铁道大学 一种单层MoS2的带隙调控方法

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WO2003032547A2 (fr) * 2001-10-09 2003-04-17 Infinera Corporation Architectures et systemes de commande de microcircuits integres photoniques d'emission (txpic) et stabilisation de longueurs d'ondes pour txpics

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9372306B1 (en) 2001-10-09 2016-06-21 Infinera Corporation Method of achieving acceptable performance in and fabrication of a monolithic photonic integrated circuit (PIC) with integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL)
US10012797B1 (en) 2002-10-08 2018-07-03 Infinera Corporation Monolithic photonic integrated circuit (PIC) with a plurality of integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL)
CN103762158A (zh) * 2014-01-23 2014-04-30 中国科学院半导体研究所 利用激光微区等离子体诱导量子阱混和的方法
US20180175587A1 (en) * 2015-06-04 2018-06-21 Hewlett Packard Enterprise Development Lp Monolithic wdm vcsels with spatially varying gain peak and fabry perot wavelength
US10868407B2 (en) * 2015-06-04 2020-12-15 Hewlett Packard Enterprise Development Lp Monolithic WDM VCSELS with spatially varying gain peak and fabry perot wavelength
EP3745471A1 (fr) * 2019-05-31 2020-12-02 OSRAM Opto Semiconductors GmbH Procédé de traitement au laser d'une tranche semi-conductrice comprenant des del algainp pour augmenter leur efficacité de génération de lumière
WO2020239526A1 (fr) * 2019-05-31 2020-12-03 Osram Opto Semiconductors Gmbh Procédé de traitement au laser d'une tranche de semi-conducteur comprenant des del algainp permettant d'augmenter leur efficacité de génération de lumière
CN113994483A (zh) * 2019-05-31 2022-01-28 欧司朗光电半导体有限公司 对包括algainp-led的半导体晶圆进行激光处理以提高其光产生效率的方法
US20220238752A1 (en) * 2019-05-31 2022-07-28 Osram Opto Semiconductors Gmbh Method of Laser Treatment of a Semiconductor Wafer Comprising AlGaInP-LEDs to Increase their Light Generating Efficiency
CN114371047A (zh) * 2020-10-14 2022-04-19 石家庄铁道大学 一种单层MoS2的带隙调控方法

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Publication number Publication date
GB0309228D0 (en) 2003-06-04
WO2004095662A3 (fr) 2005-03-24

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