WO2004086560A2 - Terahertz radiation sources and methods - Google Patents
Terahertz radiation sources and methods Download PDFInfo
- Publication number
- WO2004086560A2 WO2004086560A2 PCT/GB2004/001261 GB2004001261W WO2004086560A2 WO 2004086560 A2 WO2004086560 A2 WO 2004086560A2 GB 2004001261 W GB2004001261 W GB 2004001261W WO 2004086560 A2 WO2004086560 A2 WO 2004086560A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- terahertz radiation
- radiation
- terahertz
- source
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 153
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 100
- 239000000463 material Substances 0.000 claims abstract description 14
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 28
- 238000001816 cooling Methods 0.000 claims description 16
- 230000005284 excitation Effects 0.000 claims description 13
- 230000005684 electric field Effects 0.000 claims description 12
- 239000000969 carrier Substances 0.000 claims description 10
- 238000012546 transfer Methods 0.000 claims description 9
- 230000005679 Peltier effect Effects 0.000 claims description 4
- 230000002441 reversible effect Effects 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 19
- 238000001228 spectrum Methods 0.000 description 17
- 238000010521 absorption reaction Methods 0.000 description 14
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 12
- 229910005540 GaP Inorganic materials 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 239000006185 dispersion Substances 0.000 description 8
- 239000000523 sample Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910007709 ZnTe Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
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- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
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- 206010003677 Atrioventricular block second degree Diseases 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
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- 238000001427 incoherent neutron scattering Methods 0.000 description 2
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- 230000002123 temporal effect Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
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- 230000005540 biological transmission Effects 0.000 description 1
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- 238000013480 data collection Methods 0.000 description 1
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- 238000006073 displacement reaction Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000009615 fourier-transform spectroscopy Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
- H01Q19/10—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/2676—Optically controlled phased array
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Light Receiving Elements (AREA)
- Spectrometry And Color Measurement (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04722890A EP1606856A2 (en) | 2003-03-27 | 2004-03-24 | Terahertz radiation sources and methods |
JP2006506009A JP2006526887A (en) | 2003-03-27 | 2004-03-24 | Terahertz radiation source and method of providing the same |
US10/550,620 US7498593B2 (en) | 2003-03-27 | 2004-03-24 | Terahertz radiation sources and methods |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0307096.8A GB0307096D0 (en) | 2003-03-27 | 2003-03-27 | Terahertz radiation sources and methods |
GB0307096.8 | 2003-03-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004086560A2 true WO2004086560A2 (en) | 2004-10-07 |
WO2004086560A3 WO2004086560A3 (en) | 2005-12-29 |
Family
ID=9955667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB2004/001261 WO2004086560A2 (en) | 2003-03-27 | 2004-03-24 | Terahertz radiation sources and methods |
Country Status (5)
Country | Link |
---|---|
US (1) | US7498593B2 (en) |
EP (1) | EP1606856A2 (en) |
JP (1) | JP2006526887A (en) |
GB (1) | GB0307096D0 (en) |
WO (1) | WO2004086560A2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006010301B3 (en) * | 2006-03-07 | 2007-06-06 | Batop Gmbh | Arrangement to emit and receive terahertz radiation has photoconductive antennae with gap and mode locked pulsed laser with multi-quantum well absorber mirror |
US7282776B2 (en) | 2006-02-09 | 2007-10-16 | Virgin Islands Microsystems, Inc. | Method and structure for coupling two microcircuits |
WO2007130080A1 (en) * | 2006-05-05 | 2007-11-15 | Virgin Islands Microsystems, Inc. | Selectable frequency light emitter |
NL2006937C2 (en) * | 2011-06-15 | 2012-12-18 | Univ Delft Tech | A pulsed terahertz emitter. |
CN108417976A (en) * | 2018-02-05 | 2018-08-17 | 天津大学 | GaAs nano column array THz wave emitter and manufacturing method |
CN109900657A (en) * | 2019-02-27 | 2019-06-18 | 深圳大学 | A kind of method of testing film electrode material structure change |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070228355A1 (en) * | 2005-12-06 | 2007-10-04 | Matsushita Electric Industrial Co., Ltd. | Terahertz wave radiating device |
US7601977B2 (en) * | 2005-12-13 | 2009-10-13 | Massachusetts Institute Of Technology | Phase-matched terahertz emitter |
US20080097183A1 (en) * | 2006-09-06 | 2008-04-24 | Donald Martin Monro | Passive in vivo substance spectroscopy |
US20080161674A1 (en) * | 2006-12-29 | 2008-07-03 | Donald Martin Monro | Active in vivo spectroscopy |
WO2008147575A2 (en) * | 2007-01-11 | 2008-12-04 | Rensselaer Polytechnic Institute | Systems, methods, and devices for handling terahertz radiation |
KR101069607B1 (en) * | 2008-10-31 | 2011-10-05 | 서울대학교산학협력단 | A nanogap device for field enhancement and a system for nanoparticle detection using the same |
JP2010283176A (en) * | 2009-06-05 | 2010-12-16 | Canon Inc | Photoconductive element, and terahertz wave generator and detector using the same |
US8563955B2 (en) * | 2009-06-12 | 2013-10-22 | Baden-Wurttemberg Stiftung Ggmbh | Passive terahertz radiation source |
JP5610793B2 (en) * | 2010-03-02 | 2014-10-22 | キヤノン株式会社 | Photoconductive element |
US8642964B2 (en) * | 2010-08-31 | 2014-02-04 | The United States of America, as represented by the Secretary of Commerce, NIST | High repetition rate photoconductive terahertz emitter using a radio frequency bias |
JP5926906B2 (en) * | 2011-08-31 | 2016-05-25 | Jx金属株式会社 | Manufacturing method of ZnTe thin film for terahertz band device |
US9532463B2 (en) * | 2012-10-19 | 2016-12-27 | The Boeing Company | Methods and apparatus for reducing the occurrence of metal whiskers |
DE102014100350B4 (en) * | 2013-01-15 | 2021-12-02 | Electronics And Telecommunications Research Institute | Large-area array type photonic crystal mixer for generating and detecting broadband terahertz waves |
KR101978983B1 (en) * | 2013-01-15 | 2019-05-17 | 한국전자통신연구원 | Wide area array type photonic crystal photomixer for generating and detecting broadband terahertz wave |
US9431211B2 (en) * | 2014-08-22 | 2016-08-30 | The United States Of America, As Represented By The Secretary Of Commerce | Hybrid electron microscope |
CN110507912B (en) * | 2019-08-29 | 2021-05-11 | 鲍玉珍 | Terahertz wave physiotherapy terminal and terahertz wave physiotherapy system for early and medium gastric cancer |
JP7340391B2 (en) | 2019-09-02 | 2023-09-07 | ローム株式会社 | terahertz device |
CN113178766B (en) * | 2021-04-20 | 2022-08-09 | 中国科学院合肥物质科学研究院 | Terahertz generator based on two-dimensional material phonon die |
DE102021134222A1 (en) * | 2021-12-22 | 2023-06-22 | CiTEX Holding GmbH | THz measuring method and THz measuring device for measuring a corrugated pipe |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5420595A (en) * | 1991-03-05 | 1995-05-30 | Columbia University In The City Of New York | Microwave radiation source |
US5894125A (en) * | 1997-08-18 | 1999-04-13 | Lucent Technologies Inc. | Near field terahertz imaging |
WO2000075641A1 (en) * | 1999-06-04 | 2000-12-14 | Teraview Limited | Three dimensional imaging |
WO2001038929A1 (en) * | 1999-10-14 | 2001-05-31 | Picometrix, Inc. | Compact fiber pigtailed terahertz modules |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4972069A (en) * | 1988-08-09 | 1990-11-20 | International Business Machines Corporation | Direct generation of ultrafast electrical pulses |
US5789750A (en) | 1996-09-09 | 1998-08-04 | Lucent Technologies Inc. | Optical system employing terahertz radiation |
CA2404434A1 (en) * | 2000-04-06 | 2001-10-18 | Rensselaer Polytechnic Institute | Terahertz transceivers and methods for emission and detection of terahertz pulses using such transceivers |
-
2003
- 2003-03-27 GB GBGB0307096.8A patent/GB0307096D0/en not_active Ceased
-
2004
- 2004-03-24 EP EP04722890A patent/EP1606856A2/en not_active Withdrawn
- 2004-03-24 US US10/550,620 patent/US7498593B2/en not_active Expired - Fee Related
- 2004-03-24 WO PCT/GB2004/001261 patent/WO2004086560A2/en active Application Filing
- 2004-03-24 JP JP2006506009A patent/JP2006526887A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5420595A (en) * | 1991-03-05 | 1995-05-30 | Columbia University In The City Of New York | Microwave radiation source |
US5894125A (en) * | 1997-08-18 | 1999-04-13 | Lucent Technologies Inc. | Near field terahertz imaging |
WO2000075641A1 (en) * | 1999-06-04 | 2000-12-14 | Teraview Limited | Three dimensional imaging |
WO2001038929A1 (en) * | 1999-10-14 | 2001-05-31 | Picometrix, Inc. | Compact fiber pigtailed terahertz modules |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7282776B2 (en) | 2006-02-09 | 2007-10-16 | Virgin Islands Microsystems, Inc. | Method and structure for coupling two microcircuits |
DE102006010301B3 (en) * | 2006-03-07 | 2007-06-06 | Batop Gmbh | Arrangement to emit and receive terahertz radiation has photoconductive antennae with gap and mode locked pulsed laser with multi-quantum well absorber mirror |
WO2007130080A1 (en) * | 2006-05-05 | 2007-11-15 | Virgin Islands Microsystems, Inc. | Selectable frequency light emitter |
NL2006937C2 (en) * | 2011-06-15 | 2012-12-18 | Univ Delft Tech | A pulsed terahertz emitter. |
CN108417976A (en) * | 2018-02-05 | 2018-08-17 | 天津大学 | GaAs nano column array THz wave emitter and manufacturing method |
CN108417976B (en) * | 2018-02-05 | 2020-05-26 | 天津大学 | Gallium arsenide nano-pillar array terahertz wave transmitting device and manufacturing method thereof |
CN109900657A (en) * | 2019-02-27 | 2019-06-18 | 深圳大学 | A kind of method of testing film electrode material structure change |
Also Published As
Publication number | Publication date |
---|---|
US20070034813A1 (en) | 2007-02-15 |
EP1606856A2 (en) | 2005-12-21 |
GB0307096D0 (en) | 2003-04-30 |
JP2006526887A (en) | 2006-11-24 |
WO2004086560A3 (en) | 2005-12-29 |
US7498593B2 (en) | 2009-03-03 |
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