JP5926906B2 - Manufacturing method of ZnTe thin film for terahertz band device - Google Patents
Manufacturing method of ZnTe thin film for terahertz band device Download PDFInfo
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- 229910007709 ZnTe Inorganic materials 0.000 title claims description 92
- 239000010409 thin film Substances 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 21
- 229910052594 sapphire Inorganic materials 0.000 claims description 21
- 239000010980 sapphire Substances 0.000 claims description 21
- 238000001947 vapour-phase growth Methods 0.000 claims description 11
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229910005543 GaSe Inorganic materials 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Description
本発明は、テラヘルツ波発生器やテラヘルツ波検出器等に用いられるテラヘルツ帯デバイス用素子の製造方法に関し、特に、ＺｎＴｅ気相成長膜を利用したテラヘルツ帯デバイス用薄膜の製造方法に関する。 The present invention relates to a method of manufacturing a terahertz device for element used in the terahertz wave generator and the terahertz wave detector and the like, more particularly to a method of manufacturing a terahertz device for thin film using ZnTe vapor deposition film.
一般に、サブミリ波から遠赤外域を含む周波数領域（０．１〜１０ＴＨｚ）はテラヘルツ電磁波領域と総称され、光波と電波の境界に位置する。近年では、酸化物単結晶や化合物半導体単結晶からなる電気光学結晶（Electro-Optic Crystal）や半導体の光伝導スイッチ素子をフェムト秒レーザで励起することによりテラヘルツ波を発生する技術や、電気光学結晶の複屈折の特性を利用してテラヘルツ波を検出する技術が開発される等、テラヘルツ波に関する技術は著しく進歩している。 In general, a frequency region (0.1 to 10 THz) including a submillimeter wave to a far infrared region is collectively referred to as a terahertz electromagnetic wave region, and is located at a boundary between a light wave and a radio wave. In recent years, technologies that generate terahertz waves by exciting femtosecond lasers with electro-optic crystals (electro-optic crystals) composed of oxide single crystals or compound semiconductor single crystals, and semiconductor photoconductive switch elements, and electro-optic crystals The technology related to terahertz waves has been remarkably advanced, such as the development of technology for detecting terahertz waves using the characteristics of birefringence.
例えば、非特許文献１には、広帯域のテラヘルツ超短パルスのサンプリング技術である電気光学サンプリング（ＥＯＳ）について記載されている。また、ＺｎＴｅ単結晶をテラヘルツ検出器として用いる場合、入射するレーザ（光パルス）とテラヘルツ波（テラヘルツパルス）間での完全な位相整合は不可能であるため、薄い結晶の方が分散が小さくなって、検出される帯域幅が広くなることが記載されている。つまり、入射するレーザとテラヘルツ波の位相整合はＺｎＴｅ単結晶基板の厚さに依存するので、基板厚さを薄くして整合性をよくすれば、テラヘルツ波の検出帯域を広くすることができる。 For example, Non-Patent Document 1 describes electro-optic sampling (EOS), which is a broadband terahertz ultrashort pulse sampling technique. In addition, when a ZnTe single crystal is used as a terahertz detector, perfect phase matching between the incident laser (light pulse) and the terahertz wave (terahertz pulse) is impossible, so the dispersion of the thin crystal is smaller. Thus, it is described that the detected bandwidth becomes wider. That is, the phase matching between the incident laser and the terahertz wave depends on the thickness of the ZnTe single crystal substrate. Therefore, if the substrate thickness is reduced to improve the matching, the terahertz wave detection band can be widened.
また、非特許文献２には、非線形光学効果を用いたテラヘルツ波発生に関する技術が記載されている。例えば、ＧａＳｅを用いた場合の差周波発生に関する技術として、ＧａＳｅは負の一軸性結晶のため、入射した励起光の垂直方向成分は常光、水平方向成分は異常光となり、常光と異常光は屈折率が異なるために同じパルス内の異なる周波数成分間の差周波が発生することが記載されている。
一方、ＺｎＴｅは等軸結晶のため、通常、常光と異常光に屈折率差はないが、結晶中に「ひずみ」があると常光と異常光に屈折率差が生じるので、上述したＧａＳｅと同様にテラヘルツ波が差周波として発生することとなる。例えば、ヘムト秒レーザをＺｎＴｅ単結晶基板に照射することによりテラヘルツ波を発生させることができる。
Non-Patent Document 2 describes a technique related to terahertz wave generation using a nonlinear optical effect. For example, as a technology related to difference frequency generation when using GaSe, GaSe is a negative uniaxial crystal, so the vertical component of incident excitation light is ordinary light, the horizontal component is abnormal light, and ordinary light and abnormal light are refracted. It is described that a difference frequency between different frequency components in the same pulse is generated due to different rates.
On the other hand, since ZnTe is an equiaxed crystal, there is usually no difference in refractive index between ordinary light and extraordinary light. However, if there is “strain” in the crystal, a difference in refractive index occurs between ordinary light and extraordinary light. Then, terahertz waves are generated as difference frequencies. For example, a terahertz wave can be generated by irradiating a ZnTe single crystal substrate with a hemtosecond laser.
このように、ＺｎＴｅ単結晶はテラヘルツ波検出器及びテラヘルツ波発生器等に用いられるテラヘルツ帯デバイス用素子として利用されている。特に、広帯域のテラヘルツ波の発生及び検出には、厚さ５０μｍ以下の極薄ＺｎＴｅ基板が使用されている。
この厚さ５０μｍ以下の極薄ＺｎＴｅ基板は取り扱いが困難であることから、従来は、例えば接着剤等で石英ガラス基板上に貼り付けて機械的強度を補強した状態で使用されている。
このような極薄ＺｎＴｅ基板は、例えば、石英ガラス基板上に鏡面研磨したＺｎＴｅ基板の片面を接着剤等で貼り付けた後、所望の厚さとなるまでさらに他方の表面を鏡面研磨することによって製造されている。
Thus, the ZnTe single crystal is used as an element for a terahertz band device used for a terahertz wave detector, a terahertz wave generator, or the like. In particular, an ultrathin ZnTe substrate having a thickness of 50 μm or less is used for generation and detection of a broadband terahertz wave.
Since this ultra-thin ZnTe substrate having a thickness of 50 μm or less is difficult to handle, it is conventionally used in a state in which the mechanical strength is reinforced by being attached to a quartz glass substrate with, for example, an adhesive.
Such an ultra-thin ZnTe substrate is manufactured by, for example, attaching one surface of a mirror-polished ZnTe substrate on a quartz glass substrate with an adhesive or the like, and further mirror-polishing the other surface until a desired thickness is obtained. Has been.
しかしながら、薄く研磨する際にＺｎＴｅ基板の周辺部等が破損してしまうことが多々あった。また、技術的には最薄で５μｍまで研磨することが可能であるが、薄いほどＺｎＴｅ基板内での厚さのばらつきが大きくなり易く、研磨後のＺｎＴｅ基板の厚さのばらつきの範囲が当該研磨後のＺｎＴｅ基板の厚さに等しいくらい大きくなってしまう場合もあった。また、極薄ＺｎＴｅ基板は薄いため、使用時に破損してしまう場合もあった。
さらに、接着剤や石英ガラス基板によって、発生したテラヘルツ波が吸収され、信号強度が低下する虞があった。
However, the periphery of the ZnTe substrate is often damaged when thinly polished. Further, although it is technically possible to polish the thinnest to 5 μm, the thinner the thickness becomes, the more easily the variation in the thickness of the ZnTe substrate. In some cases, the thickness becomes as large as the thickness of the polished ZnTe substrate. In addition, since the ultrathin ZnTe substrate is thin, it may be damaged during use.
Furthermore, the generated terahertz wave is absorbed by the adhesive or the quartz glass substrate, and the signal intensity may be reduced.
テラヘルツ波検出器及びテラヘルツ波発生器等に用いられるテラヘルツ帯デバイス用素子として最も望ましいのは、電気光学効果による屈折率の変化が小さい（１００）面のＺｎＴｅ基板上に（１１０）面のＺｎＴｅを成長させることによって得られた薄膜であるが、厚いＺｎＴｅ基板を研磨して薄くしていく従来の方法では、このような薄膜（極薄基板）を得ることは現実的には実現不可能である。
また、一般に、サファイア基板等の異種基板にＺｎＴｅを成長させても、通常は単結晶が得られ難いことが知られている。
The most desirable element for a terahertz band device used in a terahertz wave detector, a terahertz wave generator, or the like is a (110) plane ZnTe layer on a (100) plane ZnTe substrate having a small refractive index change due to the electro-optic effect. Although it is a thin film obtained by growing, it is practically impossible to obtain such a thin film (ultra-thin substrate) by a conventional method in which a thick ZnTe substrate is polished and thinned. .
In general, it is known that even when ZnTe is grown on a heterogeneous substrate such as a sapphire substrate, it is usually difficult to obtain a single crystal.
本発明は、テラヘルツ波発生器やテラヘルツ波検出器等のテラヘルツ帯デバイスにおいて優れた特性を発揮できるテラヘルツ帯デバイス用ＺｎＴｅ薄膜の製造方法を提供することを目的とする。 The present invention aims to provide a manufacturing method of the terahertz band device for ZnTe thin film excellent properties can be exhibited in the terahertz band device, such as a terahertz wave generator and the terahertz wave detector.
請求項１に記載の発明は、上記目的を達成するためになされたもので、厚さのばらつきの範囲が厚さの１０％以内となるテラヘルツ帯デバイス用ＺｎＴｅ薄膜の製造方法であって、基板上にＺｎＴｅ下地層を１０〜１００オングストロームの厚さで形成する工程と、気相成長法によって前記ＺｎＴｅ下地層上にＺｎＴｅ層を５〜１０μｍの厚さで気相成長させる工程と、を有することを特徴とする。 The invention described in 請 Motomeko 1 has been made in order to achieve the above object, a manufacturing method of the ZnTe thin film terahertz devices range variation in the thickness is within 10% of the thickness, Forming a ZnTe underlayer with a thickness of 10 to 100 Å on the substrate; and vapor-phase-growing the ZnTe layer with a thickness of 5 to 10 μm on the ZnTe underlayer by vapor deposition. It is characterized by that.
請求項２に記載の発明は、請求項１に記載のテラヘルツ帯デバイス用ＺｎＴｅ薄膜の製造方法において、前記ＺｎＴｅ下地層を、前記ＺｎＴｅ層の成長温度よりも低い温度で形成することを特徴とする。
請求項３に記載の発明は、請求項１または２に記載のテラヘルツ帯デバイス用ＺｎＴｅ薄膜の製造方法において、前記ＺｎＴｅ層の成長温度は、３５０℃であり、前記ＺｎＴｅ下地層を、１００℃で形成することを特徴とする。
請求項４に記載の発明は、請求項１から３の何れか一項に記載のテラヘルツ帯デバイス用ＺｎＴｅ薄膜の製造方法において、前記基板がサファイア基板であることを特徴とする。
The invention according to claim 2 is the method for producing a ZnTe thin film for a terahertz band device according to claim 1 , wherein the ZnTe underlayer is formed at a temperature lower than a growth temperature of the ZnTe layer. .
The invention according to claim 3, in the manufacturing method of the ZnTe thin film terahertz band device according to claim 1 or 2, the growth temperature of the ZnTe layers is 350 ° C., the ZnTe underlayer, at 100 ° C. It is characterized by forming.
The invention of claim 4 is a method of manufacturing a ZnTe thin film terahertz band device according to any one of claims 1 to 3, wherein the substrate is a sapphire substrate.
請求項５に記載の発明は、請求項１から４の何れか一項に記載のテラヘルツ帯デバイス用ＺｎＴｅ薄膜の製造方法において、前記気相成長法が分子線エピタキシー法であることを特徴とする。 The invention according to claim 5 is the method for producing a ZnTe thin film for a terahertz band device according to any one of claims 1 to 4 , wherein the vapor phase growth method is a molecular beam epitaxy method. .
本発明に係るテラヘルツ帯デバイス用ＺｎＴｅ薄膜の製造方法によれば、基板を破損することなく、厚さが５〜１０μｍであり、厚さのばらつきの範囲が厚さの１０％以内であるテラヘルツ帯デバイス用ＺｎＴｅ薄膜を製造することができる。
また、本発明に係る製造方法によって得られたテラヘルツ帯デバイス用ＺｎＴｅ薄膜によれば、気相成長法によって基板上に気相成長され、厚さが５〜１０μｍであり、厚さのばらつきの範囲が厚さの１０％以内であるので、テラヘルツ波発生器やテラヘルツ波検出器等のテラヘルツ帯デバイスにおいて優れた特性を発揮することができる。
According to the method for manufacturing a ZnTe thin film for a terahertz band device according to the present invention, the thickness is 5 to 10 μm without damaging the substrate, and the thickness variation range is within 10% of the thickness. A ZnTe thin film for devices can be manufactured.
Further, according to the ZnTe thin film for a terahertz band device obtained by the manufacturing method according to the present invention, the thickness is 5 to 10 μm on the substrate by the vapor phase growth method, and the thickness variation range is Is within 10% of the thickness, it is possible to exhibit excellent characteristics in terahertz band devices such as terahertz wave generators and terahertz wave detectors.
以下、本発明の実施の形態を説明する。
本実施形態のテラヘルツ帯デバイス用ＺｎＴｅ薄膜は、気相成長法によって基板上にＺｎＴｅを気相成長させることによって製造された薄膜であり、厚さが５〜１０μｍであり、厚さのばらつきの範囲が厚さの１０％以内である。
Embodiments of the present invention will be described below.
The ZnTe thin film for a terahertz band device according to this embodiment is a thin film manufactured by vapor phase growth of ZnTe on a substrate by a vapor phase growth method, has a thickness of 5 to 10 μm, and a range of variation in thickness. Is within 10% of the thickness.
具体的には、本実施形態のテラヘルツ帯デバイス用ＺｎＴｅ薄膜は、基板上に形成されたＺｎＴｅ下地層と、当該ＺｎＴｅ下地層上に形成されたＺｎＴｅ層と、からなる。このテラヘルツ帯デバイス用ＺｎＴｅ薄膜は、ＺｎＴｅ層の成長温度（例えば、３５０℃）よりも低い温度（例えば、１００℃）で基板上にＺｎＴｅ下地層を１０〜２００オングストロームの厚さで形成する工程と、所定の成長温度（例えば、３５０℃）で当該ＺｎＴｅ下地層上にＺｎＴｅ層を５〜１０μｍの厚さで気相成長させる工程と、を有する製造方法によって製造することができる。 Specifically, the ZnTe thin film for a terahertz band device according to this embodiment includes a ZnTe underlayer formed on a substrate and a ZnTe layer formed on the ZnTe underlayer. The ZnTe thin film for a terahertz band device includes a step of forming a ZnTe underlayer with a thickness of 10 to 200 Å on a substrate at a temperature (for example, 100 ° C.) lower than a growth temperature (for example, 350 ° C.) of the ZnTe layer. And a vapor phase growth of a ZnTe layer with a thickness of 5 to 10 μm on the ZnTe underlayer at a predetermined growth temperature (for example, 350 ° C.).
なお、本実施形態では、基板としてサファイア基板を用いるが、基板はサファイア基板に限ることはなく、適宜任意に変更可能である。具体的には、サファイア基板以外の基板としては、例えば、サファイア基板よりも電気光学係数の小さな透明基板が望ましい。
また、本実施形態では、気相成長法として分子線エピタキシー法（ＭＢＥ法）を用いるが、気相成長法はＭＢＥ法に限ることはなく、適宜任意に変更可能である。
In this embodiment, a sapphire substrate is used as a substrate, but the substrate is not limited to a sapphire substrate, and can be arbitrarily changed as appropriate. Specifically, as the substrate other than the sapphire substrate, for example, a transparent substrate having a smaller electro-optic coefficient than the sapphire substrate is desirable.
In this embodiment, a molecular beam epitaxy method (MBE method) is used as the vapor phase growth method, but the vapor phase growth method is not limited to the MBE method, and can be arbitrarily changed as appropriate.
本実施形態に係るテラヘルツ帯デバイス用ＺｎＴｅ薄膜によれば、気相成長法によって基板上に気相成長され、厚さが５〜１０μｍであり、厚さのばらつきの範囲が厚さの１０％以内であるので、テラヘルツ波発生器やテラヘルツ波検出器等のテラヘルツ帯デバイスにおいて優れた特性を発揮することができる。 According to the ZnTe thin film for a terahertz band device according to this embodiment, the vapor phase growth method is performed on the substrate, the thickness is 5 to 10 μm, and the thickness variation range is within 10% of the thickness. Therefore, excellent characteristics can be exhibited in terahertz band devices such as a terahertz wave generator and a terahertz wave detector.
また、本実施形態に係るテラヘルツ帯デバイス用ＺｎＴｅ薄膜の製造方法によれば、基板上にＺｎＴｅ下地層を１０〜２００オングストロームの厚さで形成する工程と、当該ＺｎＴｅ下地層上にＺｎＴｅ層を５〜１０μｍの厚さで気相成長させる工程と、を有している。したがって、基板を破損することなく、厚さが５〜１０μｍであり、厚さのばらつきの範囲が厚さの１０％以内であるテラヘルツ帯デバイス用ＺｎＴｅ薄膜を製造することができる。 In addition, according to the method for manufacturing a ZnTe thin film for a terahertz band device according to this embodiment, a step of forming a ZnTe underlayer with a thickness of 10 to 200 angstroms on the substrate, and a ZnTe layer on the ZnTe underlayer 5 And vapor phase growth with a thickness of 10 μm. Therefore, a ZnTe thin film for a terahertz band device having a thickness of 5 to 10 μm and a thickness variation within 10% of the thickness can be produced without damaging the substrate.
また、本実施形態に係るテラヘルツ帯デバイス用ＺｎＴｅ薄膜及びその製造方法によれば、基板がサファイア基板である。すなわち、テラヘルツ帯デバイス用ＺｎＴｅ薄膜は、サファイア基板上に積層されているので、破損してしまう虞がほとんどない。また、サファイア基板は、テラヘルツ波を吸収するものの、接着剤や石英ガラス基板ほどは吸収しない。したがって、接着剤や石英ガラス基板よりもサファイア基板の方がテラヘルツ波の吸収が少ないので、ＺｎＴｅ基板を接着剤等によって石英ガラス基板上に貼り付けて補強する場合と比較して、良好な信号強度を得ることができる。 Moreover, according to the ZnTe thin film for terahertz band devices and the manufacturing method thereof according to the present embodiment, the substrate is a sapphire substrate. That is, since the ZnTe thin film for terahertz band devices is laminated on the sapphire substrate, there is almost no possibility of being damaged. A sapphire substrate absorbs terahertz waves but does not absorb as much as an adhesive or a quartz glass substrate. Therefore, the sapphire substrate absorbs less terahertz waves than the adhesive or the quartz glass substrate, so that the signal strength is better than when the ZnTe substrate is reinforced by attaching it to the quartz glass substrate with an adhesive or the like. Can be obtained.
また、本実施形態に係るテラヘルツ帯デバイス用ＺｎＴｅ薄膜及びその製造方法によれば、気相成長法が分子線エピタキシー法である。したがって、厚さのばらつきの範囲が厚さの１０％以内であるテラヘルツ帯デバイス用ＺｎＴｅ薄膜を確実に得ることができる。 Moreover, according to the ZnTe thin film for terahertz band devices and the manufacturing method thereof according to the present embodiment, the vapor phase growth method is a molecular beam epitaxy method. Therefore, a ZnTe thin film for a terahertz band device having a thickness variation range within 10% of the thickness can be obtained with certainty.
［実施例］
以下、具体的な実施例によって本発明を説明するが、発明はこれらに限定されるものではない。
[Example]
Hereinafter, the present invention will be described with reference to specific examples, but the present invention is not limited thereto.
まず、直径２インチのサファイアＣ面基板を有機溶剤で脱脂した後、ＭＢＥ装置のチャンバーに入れた。
次いで、ＺｎＴｅ層の成長温度（本実施例の場合、３５０℃）よりも低い温度（本実施例の場合、１００℃程度）で、Ｚｎ及びＴｅの原料セル温度を調整しながら分子ビームをサファイアＣ面基板に照射して、サファイアＣ面基板上に数十オングストロームの厚さのＺｎＴｅ下地層を堆積させた。この際、膜厚（ＺｎＴｅ下地層の厚さ）の制御を的確に行うことができるよう、成長速度を毎秒１オングストローム未満とした。
First, a 2 inch diameter sapphire C-plane substrate was degreased with an organic solvent and then placed in a chamber of an MBE apparatus.
Next, the molecular beam is changed to sapphire C while adjusting the source cell temperature of Zn and Te at a temperature (about 100 ° C. in this example) lower than the growth temperature of the ZnTe layer (350 ° C. in this example). The surface substrate was irradiated to deposit a ZnTe underlayer having a thickness of several tens of angstroms on the sapphire C-surface substrate. At this time, the growth rate was set to less than 1 angstrom per second so that the film thickness (the thickness of the ZnTe underlayer) can be accurately controlled.
次いで、３５０℃にサファイアＣ面基板を昇温した後、Ｚｎ及びＴｅの原料セル温度を調整しながら分子ビームをサファイアＣ面基板に照射して、ＺｎＴｅ下地層上にＺｎＴｅ層を成長させた。
なお、ＺｎＴｅ層の厚さは、“成長速度×成長時間”で規定することができる。具体的には、例えば、成長速度を毎時０．５μｍとし、成長時間を１０時間とすれば、５μｍのＺｎＴｅ層を再現性よく得ることができる。
また、ＭＢＥ法では、ビームの照射面積が、基板（本実施例の場合、サファイアＣ面基板）の面積よりも十分に大きければ、製造したＺｎＴｅ薄膜の厚さのばらつきの範囲を、当該製造したＺｎＴｅ薄膜の厚さの１０％以内にすることができる。
Next, after heating the sapphire C-plane substrate to 350 ° C., a ZnTe layer was grown on the ZnTe underlayer by irradiating the sapphire C-plane substrate with adjusting the source cell temperature of Zn and Te.
The thickness of the ZnTe layer can be defined by “growth rate × growth time”. Specifically, for example, if the growth rate is 0.5 μm / hour and the growth time is 10 hours, a 5 μm ZnTe layer can be obtained with good reproducibility.
Further, in the MBE method, if the irradiation area of the beam is sufficiently larger than the area of the substrate (in the present embodiment, the sapphire C-plane substrate), the range of variation in the thickness of the manufactured ZnTe thin film is manufactured. It can be within 10% of the thickness of the ZnTe thin film.
このようにして製造することによって、サファイアＣ面基板上に、（１１１）のＺｎＴｅ単結晶薄膜を５μｍの厚さで成長させることができた。
また、ＺｎＴｅ層の成長温度（３５０℃）におけるサファイアＣ面基板とＺｎＴｅ（１１１）との格子不整合度は２５％程度であるが、初期の成長温度をＺｎＴｅ層の成長温度（３５０℃）よりも低い温度（１００℃程度）として数層のＺｎＴｅを堆積させ、その後、サファイアＣ面基板の温度をＺｎＴｅ層の成長温度（３５０℃）まで上げて、当該数層のＺｎＴｅ上にＺｎＴｅ層を成長させることによって、単一ドメインの（１１１）ＺｎＴｅ薄膜を得ることができた。
なお、実施例では、サファイア基板のＣ面上に単一ドメインの（１１１）ＺｎＴｅ薄膜を形成することとしたが、面方位や基板面はこれに限定されるものではない。
By manufacturing in this way, a (111) ZnTe single crystal thin film could be grown to a thickness of 5 μm on a sapphire C-plane substrate.
The lattice mismatch between the sapphire C-plane substrate and ZnTe (111) at the growth temperature of the ZnTe layer (350 ° C.) is about 25%, but the initial growth temperature is higher than the growth temperature of the ZnTe layer (350 ° C.). Then, several layers of ZnTe are deposited at a lower temperature (about 100 ° C.), and then the temperature of the sapphire C-plane substrate is raised to the growth temperature of the ZnTe layer (350 ° C.) to grow a ZnTe layer on the several layers of ZnTe. By doing so, a single-domain (111) ZnTe thin film could be obtained.
In the embodiment, the single-domain (111) ZnTe thin film is formed on the C surface of the sapphire substrate, but the plane orientation and the substrate surface are not limited to this.
さらに、Ｘ線回折やエリプソメトリー等の光学的手法、或いは段差計等の探針を用いた手法によって、製造したＺｎＴｅ薄膜の中心部及びその周辺４点の合計５点の厚さを測定した。そして、相加平均値を求め、５点の厚さと相加平均値との差の絶対値を５点の厚さのばらつきとして求めた。その結果、厚さのばらつきは最大でも０．５μｍであり、製造したＺｎＴｅ薄膜の厚さのばらつきの範囲が、当該製造したＺｎＴｅ薄膜の厚さの１０％以内に収まっていることを確認した。 Furthermore, the thickness of a total of five points including the central portion of the manufactured ZnTe thin film and its four peripheral points was measured by an optical method such as X-ray diffraction and ellipsometry, or a method using a probe such as a step meter. Then, an arithmetic average value was obtained, and an absolute value of a difference between the thickness at the five points and the arithmetic average value was obtained as a variation in the thickness at the five points. As a result, the thickness variation was 0.5 μm at the maximum, and it was confirmed that the thickness variation range of the manufactured ZnTe thin film was within 10% of the thickness of the manufactured ZnTe thin film.
以上、本発明者によってなされた発明を実施形態に基づいて具体的に説明したが、本発明は上記実施形態に限定されるものではなく、その要旨を逸脱しない範囲で変更可能である。 As mentioned above, although the invention made by this inventor was concretely demonstrated based on embodiment, this invention is not limited to the said embodiment, It can change in the range which does not deviate from the summary.
今回開示された実施の形態はすべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は上記した説明ではなく特許請求の範囲によって示され、特許請求の範囲と均等の意味及び範囲内でのすべての変更が含まれることが意図される。 The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.
Claims (5)
基板上にＺｎＴｅ下地層を１０〜１００オングストロームの厚さで形成する工程と、
気相成長法によって前記ＺｎＴｅ下地層上にＺｎＴｅ層を５〜１０μｍの厚さで気相成長させる工程と、
を有することを特徴とするテラヘルツ帯デバイス用ＺｎＴｅ薄膜の製造方法。 A method of manufacturing a ZnTe thin film for a terahertz band device in which the thickness variation range is within 10% of the thickness,
Forming a ZnTe underlayer with a thickness of 10 to 100 Å on the substrate;
Vapor-phase-growing a ZnTe layer with a thickness of 5 to 10 μm on the ZnTe underlayer by vapor deposition;
A method for producing a ZnTe thin film for a terahertz band device, comprising:
前記ＺｎＴｅ下地層を、１００℃で形成することを特徴とする請求項１または２に記載のテラヘルツ帯デバイス用ＺｎＴｅ薄膜の製造方法。 The growth temperature of the ZnTe layer is 350 ° C.
The method for producing a ZnTe thin film for a terahertz band device according to claim 1 or 2 , wherein the ZnTe underlayer is formed at 100 ° C.
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