WO2004079789A3 - Isolation entre etages dans des transistors darlington - Google Patents

Isolation entre etages dans des transistors darlington Download PDF

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Publication number
WO2004079789A3
WO2004079789A3 PCT/US2004/006278 US2004006278W WO2004079789A3 WO 2004079789 A3 WO2004079789 A3 WO 2004079789A3 US 2004006278 W US2004006278 W US 2004006278W WO 2004079789 A3 WO2004079789 A3 WO 2004079789A3
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WO
WIPO (PCT)
Prior art keywords
contact
region
base
emitter
conductive
Prior art date
Application number
PCT/US2004/006278
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English (en)
Other versions
WO2004079789A2 (fr
Inventor
Tat-Sing Paul Chow
Yi Tang
Original Assignee
Rensselaer Polytech Inst
Tat-Sing Paul Chow
Yi Tang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rensselaer Polytech Inst, Tat-Sing Paul Chow, Yi Tang filed Critical Rensselaer Polytech Inst
Publication of WO2004079789A2 publication Critical patent/WO2004079789A2/fr
Publication of WO2004079789A3 publication Critical patent/WO2004079789A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'invention concerne un transistor Darlington comprenant une zone collectrice semi-conductrice d'un type de conductivité permettant de former un collecteur pour le dispositif. Un contact de collecteur conducteur et une zone de base semi-conductrice d'un type de conductivité opposé sont connectés à la zone collectrice. Une première zone d'émission semi-conductrice et une seconde zone d'émission semi-conductrice espacée du premier type de conductivité sont connectées à la zone de base, un premier contact d'émission conducteur étant connecté à la première zone d'émission et un second contact d'émission conducteur étant connecté à la seconde zone d'émission. Un premier contact de base conducteur est connecté à la zone de base et connecté électriquement au premier contact d'émission. Un second contact de base conducteur est isolé électriquement du premier contact de base et connecté à la zone de base. Une zone de tranchée résistive s'étendant au moins en partie dans la zone de base permet de séparer la zone de base, de manière résistive, en une première zone de base communiquant avec le premier contact d'émission et le second contact de base et en une seconde zone de base communiquant avec le premier contact de base et le second contact d'émission.
PCT/US2004/006278 2003-03-05 2004-03-01 Isolation entre etages dans des transistors darlington WO2004079789A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US45242403P 2003-03-05 2003-03-05
US60/452,424 2003-03-05

Publications (2)

Publication Number Publication Date
WO2004079789A2 WO2004079789A2 (fr) 2004-09-16
WO2004079789A3 true WO2004079789A3 (fr) 2004-11-11

Family

ID=32962716

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/006278 WO2004079789A2 (fr) 2003-03-05 2004-03-01 Isolation entre etages dans des transistors darlington

Country Status (2)

Country Link
TW (1) TW200421613A (fr)
WO (1) WO2004079789A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103367416A (zh) * 2013-07-04 2013-10-23 西安电子科技大学 离子注入的一维电子气GaN基HEMT器件及制备方法

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* Cited by examiner, † Cited by third party
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US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
US7728402B2 (en) 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
WO2008020911A2 (fr) 2006-08-17 2008-02-21 Cree, Inc. Transistors bipolaires à grille isolée, haute puissance
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8629509B2 (en) 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8541787B2 (en) 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US9478537B2 (en) 2009-07-15 2016-10-25 Cree, Inc. High-gain wide bandgap darlington transistors and related methods of fabrication
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
CN103918079B (zh) 2011-09-11 2017-10-31 科锐 包括具有改进布局的晶体管的高电流密度功率模块
WO2020074930A1 (fr) * 2018-10-12 2020-04-16 Search For The Next Ltd Procédés de fabrication d'un dispositif transistor
CN113474878A (zh) * 2018-10-12 2021-10-01 瑟其福耐斯特有限公司 制造晶体管器件的方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2335055A1 (fr) * 1975-12-09 1977-07-08 Radiotechnique Compelec Dispositif semi-conducteur integre comportant une diode de protection contre les surtensions, et procede de fabrication d'un tel dispositif
FR2363897A1 (fr) * 1976-09-06 1978-03-31 Radiotechnique Compelec Dispositif semi-conducteur monolithique comportant un moyen de protection contre les surtensions
US4261002A (en) * 1977-11-14 1981-04-07 U.S. Philips Corporation Monolithic complementary darlington
US4827322A (en) * 1982-12-06 1989-05-02 Mitsubishi Benki Kabushiki Kaisha Power transistor
EP0509183A1 (fr) * 1986-10-01 1992-10-21 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Dispositif semi-conducteur monolithique comprenant un circuit de commande intégré et au moins un transistor de puissance intégré sur la même pièce, et procédé de fabrication associé
DE19800715A1 (de) * 1998-01-12 1999-07-15 Bremicker Auto Elektrik Elektrisches Halbleiterelement sowie Verfahren zur Herstellung eines Halbleiterelementes

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2335055A1 (fr) * 1975-12-09 1977-07-08 Radiotechnique Compelec Dispositif semi-conducteur integre comportant une diode de protection contre les surtensions, et procede de fabrication d'un tel dispositif
FR2363897A1 (fr) * 1976-09-06 1978-03-31 Radiotechnique Compelec Dispositif semi-conducteur monolithique comportant un moyen de protection contre les surtensions
US4261002A (en) * 1977-11-14 1981-04-07 U.S. Philips Corporation Monolithic complementary darlington
US4827322A (en) * 1982-12-06 1989-05-02 Mitsubishi Benki Kabushiki Kaisha Power transistor
EP0509183A1 (fr) * 1986-10-01 1992-10-21 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Dispositif semi-conducteur monolithique comprenant un circuit de commande intégré et au moins un transistor de puissance intégré sur la même pièce, et procédé de fabrication associé
DE19800715A1 (de) * 1998-01-12 1999-07-15 Bremicker Auto Elektrik Elektrisches Halbleiterelement sowie Verfahren zur Herstellung eines Halbleiterelementes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HUIJIE YU ET AL: "An IGBT and MOSFET gated SiC bipolar junction transistor", CONFERENCE RECORD OF THE 2002 IEEE INDUSTRY APPLICATIONS CONFERENCE. 37TH IAS ANNUAL MEETING . PITTSBURGH, PA, OCT. 13 - 18, 2002, CONFERENCE RECORD OF THE IEEE INDUSTRY APPLICATIONS CONFERENCE. IAS ANNUAL MEETING, NEW YORK, NY : IEEE, US, vol. 1 OF 4. CONF. 37, 13 October 2002 (2002-10-13), pages 2609 - 2613, XP010609958, ISBN: 0-7803-7420-7 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103367416A (zh) * 2013-07-04 2013-10-23 西安电子科技大学 离子注入的一维电子气GaN基HEMT器件及制备方法

Also Published As

Publication number Publication date
TW200421613A (en) 2004-10-16
WO2004079789A2 (fr) 2004-09-16

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