WO2004077535A1 - Unite et procede d'exposition par projection et procede de production de dispositif - Google Patents

Unite et procede d'exposition par projection et procede de production de dispositif Download PDF

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Publication number
WO2004077535A1
WO2004077535A1 PCT/JP2004/000912 JP2004000912W WO2004077535A1 WO 2004077535 A1 WO2004077535 A1 WO 2004077535A1 JP 2004000912 W JP2004000912 W JP 2004000912W WO 2004077535 A1 WO2004077535 A1 WO 2004077535A1
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WO
WIPO (PCT)
Prior art keywords
mark
reticle
wafer
optical system
mask
Prior art date
Application number
PCT/JP2004/000912
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English (en)
Japanese (ja)
Inventor
Naomasa Shiraishi
Original Assignee
Nikon Corporation
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Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Publication of WO2004077535A1 publication Critical patent/WO2004077535A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection

Definitions

  • the present invention relates to an exposure technique used to transfer a mask pattern onto a substrate via a projection optical system in a lithographic process for manufacturing various devices such as a semiconductor integrated circuit, a liquid crystal display, or a thin film magnetic head.
  • the present invention relates to a device manufacturing technology using the exposure technology, and is particularly suitable when an ultraviolet light having a wavelength of about 200 nm or less is used as an exposure beam.
  • the pattern of a reticle (or photomask) as a mask is reduced and transferred onto a wafer (or a glass plate, etc.) as a substrate to be exposed.
  • the exposure wavelength has been shifted to a shorter wavelength side in order to cope with miniaturization of electronic devices.
  • the exposure wavelength of 248 nm of KrF excimer laser is the mainstream, but the shorter wavelength of 193 nm of ArF excimer laser in the vacuum ultraviolet region is entering the stage of practical use. is there.
  • An exposure apparatus that uses an exposure light source such as an F 2 laser (fluorine molecular laser) with a shorter wavelength of 157 nm and an Ar 2 laser (argon molecular laser) with a wavelength of 126 nm, which is even shorter in the vacuum ultraviolet region. Is also being developed.
  • an exposure light source such as an F 2 laser (fluorine molecular laser) with a shorter wavelength of 157 nm and an Ar 2 laser (argon molecular laser) with a wavelength of 126 nm, which is even shorter in the vacuum ultraviolet region.
  • the optical path space of the exposure apparatus using vacuum ultraviolet light is It is necessary to replace (gas purge) with a purge gas consisting of nitrogen or a rare gas that does not absorb the gas.
  • a purge gas consisting of nitrogen or a rare gas that does not absorb the gas.
  • the residual oxygen concentration and residual water vapor concentration are about 1 ppm in most of the optical path from the exposure light source to the ⁇ 8. It is said that it is necessary to keep it below.
  • the substantial exposure field of view in scanning exposure is a rectangle whose short side is the width of the field of view of the projection optical system itself in the non-scanning direction and whose long side is the scanning distance (more precisely, the width of the field of view in the scanning direction). Become. Therefore, it is common to set the field of view of the projection optical system itself to a shape that is long in the non-scanning direction (rectangular, etc.) in order to expand the substantial exposure field.
  • phase shift reticle and deformed illumination As a technique for improving the resolution of the projection optical system while maintaining the exposure wavelength and the numerical aperture, so-called super-resolution techniques such as a phase shift reticle and deformed illumination have also been put to practical use.
  • super-resolution techniques such as a phase shift reticle and deformed illumination
  • the pattern for improving resolution may be limited, so in order to transfer the desired pattern, the pattern is divided into two or more reticles and drawn.
  • a method of obtaining a desired combined pattern by performing multiple exposure while changing the reticle has also been put to practical use.
  • the exposure apparatus is provided with an alignment mechanism for transferring an image of the circuit pattern with high precision alignment with the existing circuit pattern on the wafer.
  • a reticle alignment mark (reticle mark) and a wafer alignment mark (wafer mark) are provided on the reticle and the wafer, respectively, with a predetermined positional relationship with the circuit pattern to be transferred and the existing circuit pattern.
  • the alignment mechanism measures the positions of these alignment marks.
  • the reticle mark position measurement is generally performed via a projection optical system as in the following methods (a) and (b).
  • This method is disclosed in, for example, Japanese Patent Application Laid-Open No. 7-176468 and US Pat. No. 6,279,881 corresponding thereto.
  • (a) A reference mark is formed on a wafer stage on which a wafer is placed, and the positional relationship between the image of the reference mark formed on the reticle pattern surface via the projection optical system and the reticle mark is measured. .
  • the reference mark is scanned while projecting the projected image of the reticle mark formed via the projection optical system onto the reference mark on the wafer stage, and the change in the amount of light transmitted through the reference mark and the position of the reference mark Based on the relationship, the positional relationship between the two is measured. Also, in order to accurately align the projected image of the pattern on the reticle with the existing circuit pattern on the wafer, the reticle, including the imaging relationship between the reticle and the laser by the projection optical system, must An alignment is required. Therefore, in any of the above-described reticle alignments, the luminous flux used for measurement is light having a wavelength that causes the reference mark and the reticle mark to form an image through the projection optical system.
  • the exposure wavelength when the exposure wavelength is further shortened to become a vacuum ultraviolet region of 200 nm or less, the exposure light is absorbed by the lens material of the projection optical system and the illumination optical system, and remains after the optical path space is replaced with a purge gas.
  • the transmittance of the projection optical system and the illumination optical system also decreases due to the absorption of the exposure light by the light-absorbing gas such as oxygen.
  • the transmittance of the projection optical system decreases, the light amount of the light beam used in the above-described reticle alignment also decreases. For this reason, it is necessary to increase the light amount integration time to compensate for the light amount shortage, and to average the measurement errors due to multiple measurements, which increases the measurement time required for one reticle alignment.
  • the required alignment accuracy Accuracy is further increasing. Therefore, the position of many reticle marks is measured compared to the conventional one, and the measurement results are averaged or statistically processed.
  • the reticle alignment time will further increase due to both the increase in the measurement time per measurement and the required number of measurements. This leads to a decrease in the processing capability (throughput) of the exposure apparatus and causes a decrease in the productivity of electronic devices.
  • a large number of reticle exchanges and reticle alignments are required during processing of one wafer, and the adverse effect of an increase in the reticle alignment time on the processing performance is even greater.
  • the present invention has been made in view of such a problem, and even if the transmittance of a projection optical system decreases or the number of reticle marks to be measured increases, the reticle alignment time increases accordingly. It is an object of the present invention to provide an exposure technique capable of minimizing an exposure and obtaining a high throughput.
  • Another object of the present invention is to provide a device manufacturing technique with higher productivity using the exposure technique.
  • a mask (2) held on a mask stage (3) is illuminated with an exposure beam, and the exposure beam is applied to the substrate stage (14) via the mask and the projection optical system (11).
  • a first mark RFM, RFP, RM2M, RM2P
  • WF, WM second mark
  • a first mark detection system 10M, 10P
  • Step 100 for measuring the first positional relationship with the first optical system via the projection optical system.
  • the positional relationship between the first mark on the mask stage and the second mark on the substrate stage is measured in advance via the projection optical system, and thereafter, the first mark on the mask is detected.
  • the positional relationship between the mask and the second mark can be accurately measured.
  • the mask can be accurately positioned. Therefore, even if the wavelength of the exposure beam is shortened and the transmittance of the projection optical system is reduced, or the number of marks on the mask to be measured is increased, the increase in the mask alignment time is minimized. High throughput can be obtained.
  • the third step further includes, for example, a step of moving or rotating the mask. This makes it possible to correct a relatively large displacement of the mask.
  • a predetermined mark on the mask may be used as the first mark. This eliminates the need for a separate fiducial mark.
  • a fifth mark detecting system (15) provided on the substrate stage for detecting the second mark and a fifth step (step 1202) of measuring a fourth positional relationship between the second mark and the second mark.
  • the method may further include a step of performing alignment between the mask and the substrate using the fourth and fifth positional relationships.
  • the mask and the substrate can be accurately aligned when exposing the second and subsequent layers on the substrate. Can be. ⁇
  • the second positional relationship between the first mark detection system and the first mark is, for example, the detection reference position (10MC, 10PC) of the first mark detection system and the second reference position. This is the positional relationship with one mark.
  • the light having substantially the same wavelength as the exposure beam is used.
  • the positional relationship of 1 can be measured.
  • the positional relationship can be measured with high accuracy under the same conditions as during exposure.
  • the first positional relationship may be measured by measuring a projected image of the first mark formed by the projection optical system via the second mark. This makes it possible to quickly measure the positional relationship.
  • the measurement of the second positional relationship in the second step and the measurement of the third positional relationship in the third step can be performed using light having a wavelength different from that of the exposure beam. .
  • the measurement mechanism can be simplified by using, for example, light having a wavelength of about visible light for position measurement.
  • the measurement of the second positional relationship in the second step and the measurement of the third positional relationship in the third step are performed using broadband light or light capable of wavelength selection, respectively. Is also good. As a result, the measurement mechanism can be simplified and the measurement accuracy can be improved in some cases.
  • the mask and the substrate are scanned synchronously with respect to the projection optical system, and the position where the first mark detection system is arranged is determined by the position of the mask. This is a position separated from the illumination area by the exposure beam in the scanning direction of the mask.
  • the present invention when the present invention is applied to the scanning exposure method, the first mark can be easily moved to the vicinity of the detection reference position of the first mark detection system by driving the mask stage in the scanning direction.
  • the projection exposure apparatus illuminates the mask (2) held on the mask stage (3) with an exposure beam, and passes the substrate stage (14) via the mask and the projection optical system (11).
  • a projection exposure apparatus that exposes the substrate (1 2) held on the substrate stage, the first mark (RFM, RFP, RM2M, RM2P) on the mask stage and the second mark (RFM, RFP, RM2M, RM2P) on the substrate stage WF, WM) and a position measurement system (16) that measures the position of the first mark on the mask stage via the projection optical system without using the projection optical system.
  • the projection exposure method of the present invention can be carried out, and even if the transmittance of the projection optical system is reduced or the number of marks on the mask to be measured is increased, the alignment of the mask is required. The increase in time can be minimized.
  • the detection reference position (WFC) of the position measurement system is within the exposure field of view of the projection optical system
  • the detection reference position (10MC, 10PC) of the first mark detection system is It is outside the exposure field of the projection optical system.
  • the first mark is formed by using at least one of a first fiducial mark (RFM, RFP) provided on the mask stage and a predetermined mark (RM2M, RM2P) on the mask.
  • the second mark includes at least one of a second reference mark (WF) provided on the substrate stage and a predetermined mark (WM) on the substrate.
  • a second mark detection system for measuring the position of the second mark on the substrate stage; and measuring a positional relationship between the detection reference position of the position measurement system and the detection reference position of the second mark detection system.
  • a second position measurement mechanism (17, 18) for performing the measurement for performing the measurement.
  • the position measurement system performs position measurement using light having substantially the same wavelength as the exposure beam.
  • the first mark includes at least one of a first reference mark (RFM, RFP) provided on the mask stage and a predetermined mark (RM2M, RM2P) on the mask, and the second mark If at least one of a second reference mark (WF) provided on the substrate stage and a predetermined mark (WM) on the substrate is included, the position measurement system is formed by the projection optical system.
  • the projected image of the first mark may be measured via the second reference mark.
  • a part of the position measurement system can be arranged on the bottom surface side of the second reference mark, so that the position measurement system can be easily arranged.
  • the first mark detection system can perform position measurement using light having a wavelength different from that of the exposure beam, or can perform position measurement using light of a wide band or light whose wavelength can be selected.
  • the mask stage can scan in at least one direction in a plane perpendicular to the optical axis of the projection optical system, and the first mark detection system detects the exposure beam with respect to the mask.
  • the mask stage is arranged at a position distant from the illumination area in the scanning direction of the mask stage. In this case, by driving the mask stage in the scanning direction, the first mark can be easily moved near the detection reference position of the first mark detection system.
  • the device manufacturing method of the present invention includes a lithographic process using the projection exposure method or the projection exposure apparatus of the present invention.
  • a high throughput can be obtained.
  • FIG. 1 is a partially cutaway configuration view showing a projection exposure apparatus according to an example of an embodiment of the present invention.
  • FIG. 2A is a plan view showing the reticle stage 3 and the reticle base 6 of FIG. 1
  • FIG. 2B is a plan view showing the reticle base 6 of FIG. Fig 3
  • FIG. 3A is a plan view showing the wafer stage 14 in FIG. 1, and FIG. 3B is an enlarged plan view showing an exposure field IF in FIG. 3A.
  • FIG. 4A is an enlarged plan view showing a reticle-side mark, and FIG. 4B is an enlarged plan view showing a wafer W-side reference mark.
  • Fig 5 is a plan view showing the wafer stage 14 in FIG. 1, and FIG. 3B is an enlarged plan view showing an exposure field IF in FIG. 3A.
  • FIG. 4A is an enlarged plan view showing a reticle-side mark
  • FIG. 4B is an enlarged plan view showing a wafer W-side reference mark.
  • Fig 5 is an enlarged plan view showing a wafer W-side reference mark.
  • FIG. 5A is a cross-sectional view showing the calibration mechanism 16 in FIG. 1, and FIG. 5B is a view for explaining the measurement principle of the calibration mechanism 16.
  • FIG. 6 is a flowchart showing a first exposure sequence according to the embodiment of the present invention.
  • FIG. 7 is a flowchart showing a second exposure sequence in the embodiment.
  • FIG. 1 shows a schematic configuration of the projection exposure apparatus of the present embodiment.
  • an F 2 laser light source having an oscillation wavelength of 157 nm is used as the exposure light source LS.
  • the exposure light source LS A r F excimer laser (wavelength 1 9 3 nm), K r 2 laser (wave In addition to a vacuum ultraviolet laser light source such as a 146 nm long or Ar 2 laser (wavelength 126 nm), a harmonic generation light source of a YAG laser or a semiconductor laser can be used.
  • the present invention can be applied to a case where an exposure beam having a wavelength of 200 nm or more, such as a KrF excimer laser (wavelength: 248 nm), is used.
  • the exposure light IL composed of an ultraviolet pulse light having a wavelength of 157 nm as an exposure beam emitted from the exposure light source LS is shaped and uniformed in illuminance through the illumination optical system 1, and the pattern surface of the reticle 2 (lower surface). Illuminate the circuit pattern formed in the circuit.
  • the illumination optical system 1 includes an optical path bending mirror 51, an illuminance uniforming means 52 including an optical integrator (uniformizer or homogenizer), lenses 53, 54, an illumination field stop (reticle blind) 55, lenses 56, 57, and illumination.
  • a system aperture stop (diaphragm stop) 58 and condenser lenses 59 and 60 are provided.
  • the image of the circuit pattern in the illumination area of the reticle 2 is projected through the projection optical system 11 at a predetermined reduction magnification M (M is, for example, 1Z4, 1Z5, etc.) and the projection optical system 11
  • M is, for example, 1Z4, 1Z5, etc.
  • the image is transferred to a resist layer on a wafer 12 as a substrate arranged on the image forming plane.
  • the reticle 2 and the wafer 12 can be regarded as a first object and a second object, respectively, and the projection optical system 11 can be regarded as a projection system.
  • the wafer 12 as the substrate to be exposed is a disk-shaped substrate such as a semiconductor (silicon or the like) or SOI (silicon on insulator) having a diameter of, for example, 150 to 300 mm.
  • the projection optical system 11 of the present example for example, as disclosed in Japanese Patent Application Laid-Open No. 2000-47114, a catadioptric projection optical system having a plurality of optical systems having optical axes intersecting each other, As disclosed in the specification of 2000-59268, the optical system has an optical system having an optical axis from the reticle to the wafer, and a catadioptric system having an optical axis substantially orthogonal to the optical axis.
  • a catadioptric projection optical system that forms an intermediate image twice, or a plurality of refractive lenses along one optical axis, as disclosed in, for example, WO 00/39623;
  • a straight-tube catadioptric projection optical system or the like constituted by arranging two concave mirrors each having an opening near it can be used.
  • the projection optical system 11 an all-refractive projection optical system in which all optical members are refraction members can be used.
  • a total reflection type projection optical system can be used.
  • the Z axis is taken parallel to the optical axis AX of the projection optical system 11 (in this example, substantially coincides with the center of the exposure field), and the reticle 2 and the wafer 12 are scanned in a plane perpendicular to the Z axis.
  • the explanation is made with the X axis taken in the non-scanning direction perpendicular to the direction (here, the direction perpendicular to the paper of FIG. 1) and the Y axis taken in the scanning direction (here, the direction parallel to the paper of FIG. 1).
  • the reticle 2 is held by suction on a reticle stage 3 as a mask stage, and the pattern surface (lower surface) of the reticle 2 coincides with the object plane of the projection optical system 11 parallel to the XY plane.
  • the reticle stage 3 is placed on the upper surface of the reticle base 6 arranged in parallel with the object plane so as to be able to scan with a large stroke of several 100 mm in the Y direction by a drive mechanism such as a linear motor (not shown). Have been.
  • reticle stage 3 can be moved by a very small amount of about several mm in the X direction, and can be slightly rotated by about several mrad around the Z axis.
  • a reticle-side reference mark plate 8 is provided at a position in the Y direction (scanning direction) away from the reticle 2 of the reticle stage 3 of the present example.
  • the first surface (lower surface) of the reticle-side reference mark plate 8 coincides with the object surface of the projection optical system 11, and a reticle-side reference mark (see FIG. 2 (A)) is formed on the pattern surface.
  • the portion of the reticle stage 3 that faces the pattern area of the reticle 2 and the reticle-side reference mark plate 8 is an opening that can transmit the exposure light IL and another light beam described later. Further, a portion corresponding to an illumination area of the reticle base 6 by the exposure light IL is an exposure opening 7.
  • the pattern area of the reticle-side reference mark plate 8 and the reticle 2 can be moved in the object plane of the projection optical system 11 by the reticle stage 3.
  • a laser beam from a reticle interferometer 5 composed of a laser interferometer is applied to a moving mirror 4 provided on a reticle stage 3.
  • the reticle interferometer 5 is, for example, based on a reference mirror (not shown) arranged on the side of the projection optical system 11, the position (coordinate value) in the X and Y directions of the reticle stage 3, and the position around the Z axis.
  • the rotation angle is measured, and the measured value is supplied to a reticle stage control system 61 and a main control system 63 that controls the overall operation of the apparatus.
  • the reticle stage control system 61 drives a drive (not shown) based on the measured values and control information from the main control system 63.
  • the position, rotation angle, and speed of the reticle stage 3 are controlled via a mechanism.
  • the wafer 12 is held by suction on a wafer holder 13 provided on a wafer stage 14 as a substrate stage, and the surface of the wafer 12 is an image plane of the projection optical system 11 parallel to the XY plane. Matches. Near the wafer holder 13 on the upper surface of the wafer stage 14, a calibration mechanism 16 (described later in detail) as a position measurement system is installed.
  • the wafer stage 14 can be moved in a large stroke in the X and Y directions by a driving mechanism such as a linear motor (not shown) on the upper surface of the wafer base 19 parallel to its image plane. Can also move two-dimensionally in the image plane of the projection optical system 11.
  • a laser beam from a wafer interferometer 18 composed of a laser interferometer is applied to a movable mirror 17 provided on a wafer stage 14.
  • the wafer interferometer 18 is, for example, based on a reference mirror (not shown) arranged on the side of the projection optical system 11.
  • the X direction of the wafer stage 14 (therefore, the wafer 12 and the calibration mechanism 16) is used.
  • Position in Y direction (coordinate value), and rotation angle around X axis
  • Wafer stage control system 62 controls the position, rotation angle, and speed of wafer stage 14 via a drive mechanism (not shown) based on the measured values and control information from main control system 63.
  • the pattern image of the reticle 2 is projected onto the shot area on the wafer 12 via the projection optical system 11, and the reticle is passed through the reticle stage 3.
  • the speed M * VR M is the reduction magnification
  • the wafer stage 14 in synchronization with the wafer stage 14
  • the scanning is performed while maintaining a predetermined positional relationship in. Then, during the scanning exposure of each shot area, a step movement in the direction of the wafer 12 and the Y direction is performed via the wafer stage 14.
  • the diameter of the wafer 12 is, for example, about 150 to 30 O mm, and the area that the projection optical system 11 can expose by one scanning exposure is about 25 mm square. Accordingly, the circuit pattern of the reticle 2 can be obtained by repeatedly performing the scanning exposure while moving the wafer 12 in the XY plane. The exposure image can be transferred to a large number of shot areas on the entire surface of the wafer 12 by exposure.
  • reticle mark for position measurement
  • wafer marks Marks
  • the projection exposure apparatus of FIG. 1 of the present example is provided with an alignment mechanism for measuring the positions of these alignment marks.
  • an off-axis type wafer alignment sensor 15 is arranged as a wafer alignment mechanism for measuring the position of a wafer mark on the wafer 12 and a predetermined reference mark.
  • Wafer alignment sensor 15 corresponds to the second mark detection system.
  • a reticle alignment mechanism for measuring the positions of the reticle mark on the reticle 2 and a predetermined reference mark the reticle is shifted to a position shifted in the Y direction (scanning direction) independently of the projection optical system 11.
  • An alignment sensor 10 is provided.
  • the reticle alignment sensor 10 corresponds to the first mark detection system.
  • a reticle pace 6 exists between the reticle alignment sensor 10 and the object plane of the projection optical system 11 on which the reticle 2 is arranged, but the reticle base 6 has a reticle alignment sensor 10 for measurement from the reticle alignment sensor 10.
  • An alignment transmission section 9 for transmitting a light beam is provided.
  • the reticle alignment sensor 10 measures the positions of the reticle mark and the reference mark via the transmission part 9.
  • the reticle alignment sensor 10 is composed of two sensors 10 P and 10 M arranged at a distance of 2 XD 1 in the X direction as described later, and the alignment transmission section 9 is also provided. It consists of two transmission parts 9P and 9M (see Fig. 2 (B)).
  • FIG. 1 shows a state in which the reticle-side reference mark plate 8 is arranged so as to coincide with the measurement position of the reticle alignment sensor 10, and the reticle alignment sensor 10 is attached to the reticle-side reference mark plate 8.
  • the position of the formed reference mark is also measured.
  • the detection signals from the reticle alignment sensor 10 and the wafer alignment sensor 15 are supplied to an alignment signal processing system 64, and the alignment signal processing system 64 converts the detection signal into the X direction of the mark to be detected, The position in the Y direction is obtained, and the obtained position is supplied to the main control system 63.
  • the main control system 63 obtains the coordinate value of the detection target by adding the coordinate value measured by the reticle interferometer 5 or the wafer interferometer 18 to the supplied position as an example.
  • the configuration of the reticle alignment sensor 10 and the like of the present example will be described with reference to FIGS.
  • FIG. 2A is a plan view of the vicinity of the reticle stage 3 of the projection exposure apparatus of the present example
  • 121 2 (B) is a plan view of the projection exposure apparatus with the reticle stage 3 removed from FIG. 2A.
  • XY coordinate system a coordinate system with the position of the optical axis AX of the projection optical system 11 as the origin (0, 0).
  • the relationship between the X-axis, ⁇ -axis, and ⁇ -axis shown in FIGS. 2A and 2B and the projection exposure apparatus is the same as the arrangement shown in FIG.
  • the reticle stage 3 is mounted on a reticle base 6.
  • two reticle-side fiducial marks RFM and RFP as the first fiducial marks are positioned exactly 2 XD 1 away from each other in the X direction. Is formed.
  • the X coordinate of these marks in the ⁇ ⁇ coordinate system with respect to the optical axis ⁇ ⁇ is approximately —D 1 and + D 1, but this value varies with the movement of the reticle stage 3.
  • the field of view of the projection optical system 11 has a width in the X direction wider than the above-mentioned 2 X D 1 at at least a part of the position in the ⁇ direction. That is, by moving the reticle stage 3 to a predetermined position in the ⁇ direction, two reticle-side reference marks RF ⁇ and RFP can be projected onto the wafer stage 14 via the projection optical system 11. .
  • reticle 2 on which circuit pattern 2 to be transferred is formed is mounted on reticle stage 3.
  • three pairs of reticle marks are formed at a distance of D1 in the + X and 1X directions with respect to the center of the reticle (not shown).
  • One pair is reticle marks RM 2 ⁇ and RM 2 M, and their ⁇ coordinates are not shown in the reticle mark. Coincides with the center of the circle.
  • a pair of reticle marks RM1P and RM1M, and a pair of reticle marks RM3P and RM3 are located at positions away from the center of the reticle (not shown) by one D2 and + D2, respectively, in the Y direction. M is formed. Note that the circuit pattern 2P on the reticle 2 is accurately formed with a predetermined positional relationship with respect to these reticle marks.
  • the projection optical system 11 and the two reticle alignment sensors 10M and 10P are originally shielded by the reticle base 6 and cannot be seen. Is shown.
  • the reticle base 6 has an exposure opening 7 centered on the optical axis AX corresponding to the center of the exposure visual field of the projection optical system 11 and an alignment transmission unit 1 corresponding to the positions of the reticle alignment sensors 10M and 10P. 0M and 10P are provided.
  • the reticle alignment sensors 10M and 10P have their measurement reference positions (measurement origins) 10MC and 10PC, respectively, with the optical axis AX of the projection optical system 11 as the origin (one Dl, D3), (+ D 1, D 3) is set to the coordinate position.
  • the reticle alignment sensors 10M and 10P for example, an optical microscope type sensor including an imaging type optical system and an imaging element such as a CCD can be used.
  • the alignment signal processing system 64 in FIG. 1 obtains the mark position by the image processing method. That is, the reticle marks RM1P, RM1M, RM2P, RM2M, RM3P, RM3M or the reticle-side reference mark RFM of FIG.
  • this optical microscope As the configuration of this optical microscope, if an epi-illumination type optical system that irradiates illumination light (measurement light) from the optical microscope itself to the mark on the reticle side is adopted, the optical system is connected to one side of reticle 2 (Fig. It can be concentrated only on the lower side), which is convenient for miniaturization and cost reduction.
  • an independent illumination system is provided above reticle 2 in Fig. 1, and a transmission illumination system that irradiates illumination light (metering) to reticle 2 from the opposite side of reticle alignment sensors 10M and 10P is used. You can also.
  • the transmission illumination system With the transmission illumination system, The contrast of the image of the mark on the reticle image picked up by the optical microscope can be improved, whereby the measurement accuracy of the mark position on the reticle side can be further improved.
  • the measurement reference positions 10MC, 10PC of the reticle alignment sensors 10M, 10OP for example, through both optical microscopes, the center positions of the imaging elements such as the above-mentioned CCDs and the like are imaged. Positions of interest can be employed.
  • the reticle alignment sensors 10M and 10P have a reference index pattern at a position conjugate with the reticle mark RA inside the reticle alignment sensor, the position corresponding to the center position of the reference index pattern, that is, A position that forms an image with the center position via an optical microscope can be adopted as the measurement reference positions 10 MC and 10 PC.
  • a sensor including a lattice alignment type optical system and a light receiving element can be used as the reticle alignment sensors 10M and 10P.
  • a periodic pattern in the form of a diffraction grating is used as the mark on the reticle side, and the measurement origin of the position measurement mechanism and the mark on the reticle side are determined from the change in the intensity of the diffracted light from the mark caused by the irradiation of the measurement light.
  • the illumination method of the measurement light may be any of the above-described epi-illumination and transmitted illumination.
  • a luminous flux having an exposure wavelength or a luminous flux other than the exposure wavelength may be used as measurement light of the reticle alignment sensors 10M and 1OP.
  • a light beam other than the exposure wavelength a small, high-output light source such as a semiconductor laser or a light emitting diode can be used, and there is an advantage that the exposure apparatus can be downsized.
  • the position of the reticle mark cannot be accurately measured in some cases. It is better to use Guangdong.
  • the center position of the reference grating included in the grating alignment type optical system and the position conjugate via the reticle alignment sensors 10M and 10P are determined as the measurement reference position 1 OMC, 10 PC. Since the marks on each reticle side described above are all formed on the reticle 2 or the reticle-side reference mark plate 8 mounted or fixed on the reticle stage 3, the above-described measured positional relationship also applies.
  • the reticle interferometers 5a, 5b, 5c, 5d (the reticle interference (Corresponding to a total of 5). Since the position of the reticle stage 3 is measured by these reticle interferometers 5a to 5d as described below, the position of the mark on each reticle side can be accurately obtained by the above measurement.
  • the reticle interferometer 5c is installed so that the optical path of the interferometer is parallel to the X-axis and the extension thereof coincides with the optical axis AX of the projection optical system 11 whose origin is the origin.
  • the reticle interferometer 5c is an interferometer that measures the position of the reticle stage 3 in the X direction at the position of the optical axis AX of the projection optical system 11, that is, at the center position of the exposure visual field.
  • the reticle alignment sensors 10M and 10P are located at positions away from the exposure visual field of the projection optical system 11 in the Y direction.
  • the so-called Abbe error corresponds to the product of the minute rotation angle of the reticle stage 3 and the distance D3 during measurement. Measurement errors will be mixed.
  • the reticle interferometer 5d also measures the position of the reticle stage 3 in the X direction using the movable mirror 4c as the measurement target. Since the measurement reference positions of the reticle alignment sensors 10M and 10P are on the measurement optical path of the reticle interferometer 5d, the reticle alignment sensors 10M and 1OP It is possible to completely eliminate the above measurement error.
  • the optical paths of the interferometers are parallel to the Y axis, and the extension is one in the X direction from the optical axis AX of the projection optical system 11 D4.
  • + D 4 are installed so as to pass through a position distant from each other, and measure the Y-direction positions of corner cube type Y-axis movable mirrors 4 a and 4 b provided at the left end of reticle stage 3, respectively. From the average of the measured values of both interferometers 5a and 5b, the Y-direction position of reticle stage 3 can be measured.
  • the optical axis ⁇ of the projection optical system 11 is not on the interferometer optical path of these interferometers 5a and 5b, but is located at the same distance from both interferometer optical paths.
  • the position of the reticle stage 3 in the Y direction at the center position of the exposure field can be accurately obtained as an average value of the measured values of both the interferometers 5a and 5b.
  • the measurement reference positions 10MC and 10PC of the reticle alignment sensors 10M and 10P are not on the optical paths of the interferometers 5a and 5b, but the Y of the reticle stage 3 at both positions is obtained by the following method.
  • the position in the direction can be determined accurately.
  • the minute rotation angle ⁇ of the reticle stage 3 around the Z axis is ⁇ ⁇ ⁇ (2 XD4) as described above.
  • the configuration on the wafer stage 14 side of the projection exposure apparatus of this example will be described. In the projection exposure apparatus of this example, the configuration on the wafer stage 14 side does not differ greatly from the conventional projection exposure apparatus.
  • FIG. 3A is a plan view of the wafer stage 14 in FIG. 1, and FIG. 3B is an enlarged view of the exposure field IF in FIG. 3A.
  • description will be made with the optical axis AX of the projection optical system 11 indicated by the broken line as the origin of the XY coordinates.
  • the relationship between the X, Y, and Z axes shown in FIGS. 3A and 3B and the projection exposure apparatus is the same as the arrangement shown in FIG.
  • an X-axis movable mirror 17 X is installed at one end of the wafer stage 14 in the X direction, and a Y-axis movable mirror 17 Y is installed at the + Y end.
  • a position alignment sensor 15 for measuring the position of the wafer mark WM on the wafer 12 is disposed at a position that is a predetermined distance away from the optical axis ⁇ of the projection optical system 11 in one direction. I have.
  • the measurement reference position (measurement origin) 15 C is the coordinate (0, — D
  • the wafer interferometer 18a is provided so that the optical path of the interferometer coincides with the straight line of the Y knee D5, and the measurement origin 15 of the wafer alignment sensor 15 is provided via the X-axis movable mirror 17X. Measure the X coordinate of wafer stage 14 at C.
  • sensors 10M and 10P a sensor including an imaging system optical system and an imaging device or a sensor including a lattice alignment system optical system and a light receiving device can be adopted.
  • the illumination method is limited to epi-illumination.
  • the wafer interferometers 18 Y 1, 18 ⁇ 2 both having interferometer optical paths parallel to the Y direction are arranged at a distance D 5 in the —X direction and the + X direction from the ⁇ axis, respectively, and both are ⁇
  • the axis movable mirror 17 ⁇ as the measurement target, the ⁇ coordinates of the wafer stage 14 and the minute rotation angle of the wafer stage 14 around the ⁇ axis are measured.
  • the wafer interferometers 18 and 18 Y 1 each have another interferometer optical path separated in the ⁇ direction, whereby the minute rotation angle around the ⁇ axis of the wafer stage 14 and the A small rotation angle around the X axis has also been measured.
  • the wafer 12 is held on a wafer stage 14 via a wafer holder 13.
  • the calibration mechanism 16 is provided on the wafer stage 14 as described above.
  • a wafer-side reference mark WF is formed as a second reference mark.
  • the mark on the wafer including the wafer mark on the wafer 12 and the wafer-side reference mark WF corresponds to the second mark.
  • the reticle-side mark consisting of the reticle-side reference marks RFM and RFP and the reticle marks RM1M, RM1P, RM2M, RM2P, RM3M, and RM3P (here, this is typically referred to as “reticle mark RM”)
  • reticle mark RM the reticle mark consisting of the reticle-side reference marks RFM and RFP and the reticle marks RM1M, RM1P, RM2M, RM2P, RM3M, and RM3P
  • FIG. 4A is a diagram showing the mark shape of the reticle mark RM.
  • the reticle mark RM is a reticle side in which a rectangular transmission pattern having a long side in the Y direction is arranged with periodicity in the X direction in a light-shielding background RMB formed by a corner or the like.
  • An X pattern RMX and a reticle side Y pattern RMY in which rectangular transmission patterns having long sides in the X direction are arranged with periodicity in the Y direction are formed.
  • the center RMC of the reticle mark RM has the X coordinate as the center in the X direction of the reticle side X pattern RMX, and the Y coordinate as the center in the Y direction of the reticle side Y pattern RMY.
  • a mark (reticle mark RM) on each reticle side is formed with the above-mentioned center RMC aligned with each of the above-mentioned positions. I have.
  • FIG. 4B is a diagram showing the mark shape of the wafer-side reference mark WF.
  • the wafer-side reference mark WF also has a transparent X pattern WFX having a long side in the Y direction and a rectangular transmission having a long side in the X direction in a light-shielding background W FB formed of chrome or the like.
  • a Y pattern WFY of the nature The position of the center WFC of the wafer-side reference mark WF is such that the X coordinate is the center of the X pattern WF X in the X direction, and the Y coordinate is the center of the Y pattern WFY in the Y direction.
  • the cross-sectional structure of the calibration mechanism 16 on the wafer stage 14 is as shown in FIG.
  • the transparent substrate 21 on which the wafer-side reference mark WF is formed has three projections 22 a and 22 b provided on the main structure 20 (the remaining one is not shown). And three projections 24 a, provided on the substructure 23. 2 4 b (the remaining one is not shown) is supported from above and below at the same three points.
  • the fixing is performed by the tightening force of set screws 25 a and 25 b for attaching the sub-structure 23 to the main structure 20.
  • the luminous flux transmitted through the transmission patterns WF X and WF Y on the wafer-side reference mark WF see FIG.
  • circuit chips (shot areas) 71 including existing circuit patterns formed in the previous process exist on the wafer 12. Therefore, when exposing the circuit pattern 2P of the reticle 2, it is necessary to accurately align the projected image of the circuit pattern 2P on the existing pattern before performing the exposure.
  • a wafer mark WM formed in the previous step at the same time as the circuit pattern and in a predetermined positional relationship is formed. Therefore, the position of the existing circuit pattern on the wafer can be obtained from the position measurement result of the wafer mark WM by the wafer alignment sensor 15 and the above-described predetermined positional relationship.
  • the positional relationship between the projection optical system 11 and the reticle alignment sensors 10M and 10P (reticle-side baseline amount) and the positional relationship between the projection optical system 11 and the wafer alignment sensor 15 (the wafer side)
  • the base line amount fluctuates, though slightly, due to temperature changes in the surrounding environment of the exposure apparatus, slight heat expansion of the exposure apparatus itself due to heat generation due to operation of the exposure apparatus, and the like.
  • the imaging relationship of the projection optical system 11 that is, the imaging relationship between a predetermined position on the object plane where the reticle 2 is arranged and a predetermined position on the image plane where the wafer 12 is arranged
  • Subtle fluctuations occur due to changes in ambient temperature and pressure.
  • FIG. 6 is a flowchart showing a first exposure sequence of the present embodiment. Hereinafter, the operation of each step of FIG. 6 in the first exposure sequence will be described.
  • Step 100 The wafer-side reference marks WF formed on the surface of the calibration mechanism 16 in FIG. 3A and the reticle-side reference marks RFM and RFP on the reticle-side reference mark plate 8 in FIG.
  • the calibration mechanism 16 measures the positional relationship between the projected images RFMI and RFPI.
  • the reticle stage 3 in FIG. 1 is moved so that the reticle-side reference marks R FM and RFP coincide with the predetermined Y coordinate position in FIG. 2A within the field of view of the projection optical system 11.
  • the reticle-side reference marks RFM and RFP are set at the coordinate positions of ( ⁇ D 1, 0) and (+ D 1, 0), respectively. Since the positions of the reticle-side reference marks RFM and RFP on the reticle stage 3 are known from the design data of the exposure apparatus, etc., the movement to the above positions is performed using the known design data and the reticle interferometer 5c and reticle interferometer 5 This can be done based on the position measurement values of a and 5b.
  • the exposure light source LS emits light and irradiates the exposure light IL to the reticle-side reference marks RFM and RFP. That is, the reticle-side reference mark plate 8 needs to be formed of a material that transmits the exposure light satisfactorily, for example, quartz glass or quartz glass to which fluorine has been added.
  • the projected images RFM I and RFP I of the fiducial marks RFM and RFP are formed.
  • FIG. 3B is an enlarged view of the field of view IF of the projection optical system 11 at this time.
  • the wafer stage 14 is moved, and as shown in the sectional view of FIG. 5B, the X pattern WFX in the wafer-side reference mark WF on the calibration mechanism 16 is replaced with the reticle-side reference mark RFM.
  • X pattern RMX Projection image RMX I placed at the position. At this time, a part of the light beam forming the projected image RMX I passes through the X pattern WFX, which is a transmitting part, and enters the light amount sensor 27 in the calibration mechanism 16. And is photoelectrically converted.
  • the main control system 63 in FIG. 1 can measure the positional relationship in the X direction between the projected image RMX I and the X pattern WFX from the change in the light amount signal output from the light amount sensor 27.
  • the main control system 63 finally uses the X-direction position of the wafer stage 14 measured by the wafer interferometer 18X and the X-direction position of the reticle stage 3 measured by the reticle interferometer 5c.
  • the X-direction positional relationship between the X pattern RMX in the reticle-side reference mark RFM and the X pattern WFX in the wafer-side reference mark WF via the projection optical system 11 is calculated.
  • the wafer stage 14 is driven to arrange the Y pattern WFY in the wafer-side reference mark WF on the calibration mechanism 16 at the position of the projected image of the Y pattern RMY in the reticle reference mark RFM. . Then, in this state, the wafer stage 14 is scanned in the Y direction, and the change in the light amount signal of the light amount sensor 27 at that time is measured.
  • the main control system 63 measures the change of the photoelectric signal, the position of the wafer stage 14 in the Y direction measured by the wafer interferometers 18Y1, 18Y2, and the reticle interferometers 5a, 5b.
  • the projection optical system 11 is a reduction optical system having a reduction ratio M that forms a general inverted image
  • the projected image RFMI is formed at a position shifted by a minute position from the minute change of the imaging relationship of the projection optical system 11.
  • the projected image RFMI is not on the extension of the measurement optical path of the wafer interferometers 18Y1 and 18Y2, but the Abbe error accompanying this is
  • the reticle interferometers 5a and 5b can be removed by the same method as described.
  • the positional relationship in the XY direction between the reticle-side reference mark RFM and the wafer-side reference mark WF via the projection optical system 11 can be measured. Note that this positional relationship is the positional relationship in the coordinate system on the wafer stage 14 side shown in FIG. 3 (A).
  • the reduction magnification M of the projection optical system 11 By dividing this by the reduction magnification M of the projection optical system 11, the reticule can be easily obtained. It can be converted to a relationship in the two-side coordinate system.
  • the reduction magnification M is a negative number (generally, 1/4 or 1/5) if the projection optical system 11 forms an inverted image.
  • the relative position of the reticle-side reference mark RFM with respect to the wafer-side reference mark WF is used, and the coordinates (PMX, P MY) expressed in the XY coordinate system of the reticle 2 are used as the positional relationship. I do.
  • Step 110 Move the reticle stage 3 so that the center of the reticle-side fiducial marks RFM, RFP coincides with the coordinates of (one Dl, D3) and (+ D1, D3), respectively.
  • the control of the X direction position of the reticle stage 3 is performed based on the position measurement result of the reticle interferometer 5d.
  • These coordinates are the coordinates where the measurement reference positions 10MC and 10PC of the reticle alignment sensors 10M and 10P should be.
  • the reticle alignment sensors 10M and 1OP measure the amounts of displacement of the reticle-side reference marks RFM and RFP from the measurement reference positions 10MC and 10PC in the X and Y directions, respectively.
  • Step 120 The wafer stage 14 is moved so that the wafer-side reference mark WF matches the coordinate position of (0, -D5). However, the control of the X direction position of the wafer stage 14 at this time is performed based on the position measurement result of the wafer interferometer 18a. These coordinates are coordinates where the measurement origin 15C of the wafer alignment sensor 15 should be. In this state, the deviation amount of the measurement origin 15C of the wafer side reference mark WF in the X and Y directions is measured by the wafer alignment sensor 15. By multiplying the measurement result by -1, the deviation amount (WAX, WAY) of the measurement origin 15C of the wafer alignment sensor 15 from the original position can be calculated.
  • the wafer alignment sensor 15 is a sensor including an optical system of an imaging method
  • the sensor includes a grating alignment type optical system, it is not suitable for position measurement of the X mark WF X and the Y mark W F Y which are isolated marks.
  • a second X mark WFX 2 having a predetermined cycle in the X direction is placed in the wafer side reference mark WF at a position away from the X mark WFX by a predetermined distance in the Y direction, and a Y mark WFY
  • a second Y mark WF Y 2 having a predetermined period in the Y direction is provided at a position away from the predetermined distance in the X direction.
  • Step 130 Measure the position of the reticle marks RM2M and RM2P. If the reticle 2 has not been loaded on the exposure apparatus, the reticle 2 is loaded (loaded) on the reticle stage 3 by a reticle transport mechanism (not shown) in step 130. When the reticle 2 is loaded by a reticle transport mechanism (not shown), the reticle 2 is centered on the X, Y, and Z axes by a briar alignment mechanism (not shown) provided in the reticle transport mechanism. The reticle stage 3 is placed on the reticle stage 3 after being pre-aligned to some extent in the rotation direction.
  • the reticle marks RM2M and RM2P located at the center of the circuit pattern 2P of reticle 2 in the Y direction are positioned in the Y direction with respect to the reticle-side reference marks R FM and RFP, respectively. Are located at the same coordinates in the X direction, separated by DO (see Fig. 2 (A)).
  • the above-mentioned bri-alignment alone is not sufficient for position setting accuracy Therefore, it is necessary to accurately measure the position of the reticle mark on reticle 2 by performing the following position measurement process.
  • reticle stage 3 is moved to a position moved by D 0 in the + Y direction compared to the position in step 110.
  • the control of the X direction position of the reticle stage 3 is also performed based on the position measurement result of the reticle interferometer 5d.
  • reticle marks RM2M and RM2P are generally arranged near measurement reference positions 10MC and 10PC of reticle alignment sensors 10M and 10P, respectively.
  • the respective reticle alignment sensors 10M and 1OP measure the reticle mark RM2M deviation (RM2X, RM2Y) with reference to the measurement reference position 10MC, and the reticle mark from the measurement origin 10PC Measure the deviation of RM 2 P (RP 2 X, RP 2 Y).
  • the positions of the reticle marks RM2M, RM2P with reference to the reticle-side reference marks RFM, RFP are determined based on the measurement results in step 110 and the measurement results in step 130. That is, the reticle mark RM 2 M is located at a position (RM2 X + RAMX, — D 0 + RM2 Y + RAMY) away from the reticle-side reference mark RFM, and the reticle mark RM 2 P is placed on the reticle-side reference mark RFP. On the other hand, it is found that the distance is (RP 2 X + RAPX, -D 0 + RP 2 Y + RAP Y).
  • the relative positions (PMX, PMY), (PPX) of the reticle-side reference marks R FM and RFP with the wafer-side reference mark WF as the reference position via the projection optical system 11 , PPY) are also known.
  • the positions of the reticle marks RM2M and RM2P with the wafer-side reference mark WF as a reference position via the projection optical system 11 are determined. That is, for the reticle mark RM2M, this is (PMX + RM2 X + RAMX, PMY—D0 + RM2Y + RAMY), and for the reticle mark RM 2 P, (PPX + RP 2 X + RAPX, PPY-D0 + RP 2Y + RAPY). Note that this positional relationship is a positional relationship in the case where the reticle stage 3 and the wafer stage 14 are at the position where the measurement in Step 100 is performed. At this time, the reticle-side reference marks RFM and RFP are (_D 1, 0), (+ D 1, 0).
  • the loading target positions of the reticle-side reference marks RFM and RFP and the reticle marks RM2M and RM2P are the positions separated by DO in the Y direction as described above. Therefore, the reticle stage 3 is moved by D0 in the Y direction from the above-mentioned position, and the loading target positions of the reticle marks R M2M and RM2 P coincide with (-D1,0) and (+ D1,0), respectively.
  • the position of the reticle mark RM2M via the projection optical system 11 with the wafer-side reference mark WF as the reference position is (PMX + RM2X + RAMX, PMY + RM2Y + RAMY) Yes
  • the position of the reticle mark RM 2 P is (P PX + RP 2 X + RAPX, PPY + RP 2 Y + RAPY). This is the total reticle positioning error including the slight fluctuation of the exposure apparatus and the reticle 2 loading error.
  • the position of reticle 2 is shifted by (one PMX—RM2 X—RAMX, —PMY—RM2Y_RAMY) at the position of reticle mark RM 2 M, and reticle mark RM 2 P
  • shifting by (-P PX-RP 2 X-RAPX, -PPY-RP 2Y-RAPY) at the position it is possible to compensate for the reticle positioning error.
  • rotation of reticle 2 is required to perform correction with different shift amounts at different reticle marks RM2M and RM2P on reticle 2.
  • This rotation correction can be performed by rotating the entire reticle stage 3. If the positioning accuracy of the reticle pre-alignment mechanism described above is insufficient, the reticle 2 may be mounted on the reticle stage 3 in a state of relatively large rotation. As a result, a large value is required for the rotation angle of the entire reticle stage 3.
  • the reticle stage 3 is provided with a fine movement position adjustment mechanism at the position where the reticle 2 is placed.As a result of the position measurement of the reticle marks RM 2 M and RM 2 P, it is necessary to rotate the reticle stage 3 greatly. In this case, the rotation angle of the reticle 2 with respect to the entire reticle stage 3 can be corrected by the fine movement position adjusting mechanism, and the rotation angle of the entire reticle stage 3 can be reduced.
  • Step 140 Measure the position of the wafer mark WM on the wafer 12. This The steps are the same as those employed in a conventional exposure apparatus.
  • the wafer 12 is loaded (loaded) on the wafer holder 13 by a wafer transfer mechanism (not shown) in step 140.
  • the wafer 12 is moved by the wafer briar alignment mechanism (not shown) provided in the wafer transfer mechanism with respect to the X, Y, and Z axes based on the outer shape.
  • the wafer is placed on the wafer holder 13 with a certain degree of brialignment in the rotation direction about the center.
  • a predetermined number of marks are selected from a large number of wafer marks WM arranged on the wafer 12, and the position of the mark is measured.
  • This position measurement means measuring the amount of displacement of the wafer mark WM from the measurement origin 15 C of the wafer alignment sensor 15. Then, the result is statistically processed to calculate the shot arrangement of all the circuit chips 71 on the wafer 12, and the position of the circuit pattern in each circuit chip 71 is calculated.
  • the position measurement of P and the position measurement of wafer alignment sensor 15 in step 120 can be operated in parallel. Therefore, Steps 110 and 120 are not performed sequentially, but by operating in parallel. The operation time can be reduced, and the processing capability of the exposure apparatus can be improved.
  • the position measurement of the reticle marks RM 2 M and RM 2 P by the above step 130 and the position measurement of the wafer mark WM by the step 140 can be operated in parallel. Therefore, by performing step 130 and step 140 in parallel as needed, the operation time can be reduced, and the processing capability of the exposure apparatus can be improved.
  • Step 150 The position of the circuit pattern measured in Step 140, the positional relationship between the wafer sensor 15 and the projection optical system 11 (D5 away in the Y direction), and Step 1 2 Based on the deviation (WA X, WA Y) of the measurement origin 15 C of the wafer alignment sensor 15 from the original position (0, _D 5) measured in the process 0, the wafer 1 Projection optical system for projecting circuit chip 7 1 to be exposed in 2 1 1
  • the projected image of the circuit pattern 2P of the reticle 2 formed by the projection optical system 11 can be accurately aligned with the circuit pattern in the circuit chip 71.
  • Step 160 The wafer 12 is unloaded by a wafer transfer mechanism (not shown). Then, it is checked whether a wafer to be continuously exposed remains. If there is a wafer to be subsequently exposed, return to step 140 to expose the next wafer. If there is no wafer to be exposed, complete the exposure.
  • the setting positions of the reticle-side reference marks RFM and RFP and the wafer-side reference marks WF are shifted from the respective setting positions in the above steps due to a manufacturing error of the reticle stage 3 and thermal expansion. It has become.
  • the error given to the measured value PMX obtained in step 100 and the measured value RAMX obtained in step 110 by the amount of displacement in the X direction of the reticle-side reference mark RFM is equal to the absolute value and the sign is inverted. It's just Therefore, when calculating the X-position correction amount (one PMX-RM2 X-RAMX) of the reticle-side reference mark RFM that is ultimately required.
  • the measurement error due to the X-direction displacement of the reticle-side reference mark RFM is offset. .
  • the displacement of the reticle-side reference mark RFM in the Y direction is offset in the same manner, and the displacement of the reticle-side reference mark RFP in the X and Y directions is also offset similarly.
  • some reticles 2 used in a scanning exposure apparatus have a plurality of pairs of alignment marks in order to improve alignment accuracy. That is, not only a pair of the reticle marks RM 2 M and RM 2 P disposed at the center position in the Y direction of the circuit pattern 2 P of the reticle 2 described above, but also a pair thereof in the Y direction and + Y A pair of reticle marks RM1M and RM1P and a pair of reticle marks RM3M and RM3P arranged at a predetermined distance in the direction are arranged.
  • the exposure method of the present embodiment it is of course possible to measure such a plurality of pairs of reticle marks. That is, when measuring the reticle marks RM2M and RM2P in step 130, the reticle stage 3 is moved by a predetermined distance in the Y direction, and the reticle marks RM1M and RM1P and the reticle marks RM3M and RM3P are also aligned. Position measurement may be performed using sensors 10M and 10P.
  • the position measurement of the reticle marks RM2M and RM2P is performed by using a mechanism such as the calibration mechanism 16 of the present example, and exposing the exposure light (exposure wavelength) through the projection optical system 11. Luminous flux).
  • the transmittance of the projection optical system 11 to the exposure light has been reduced. Therefore, in the conventional reticle mark position measurement using the exposure light via the projection optical system 11, the measurement accuracy is reduced due to a decrease in the amount of detected light.
  • the measurement time further increases in proportion to the number of marks.
  • the position of the reticle mark is measured by the reticle alignment sensors 10M and 10P independent of the projection optical system 11, it is irrelevant to the transmittance of the projection optical system 11. Therefore, the position of the reticle mark can be measured in a short time, and the time required for measuring a large number of reticle marks can be significantly reduced as compared with the conventional apparatus.
  • steps 120 and 140 for measuring the wafer mark WM and measuring the position of the wafer alignment sensor 15 in the above-described exposure process can be omitted.
  • the wafer 12 is not shown in the wafer transfer mechanism (not shown).
  • the wafer is aligned on the wafer holder 13 by the wafer pre-alignment mechanism on the basis of the external shape and exposed.
  • the reticle marks RM1P, RM1M, RM2P, RM2M, RM3P, RM3M are also transferred onto the wafer 12. become.
  • Exposure light IL is also applied to the mark positions of the reference marks RFM and RFP, but when exposing the wafer 12 in step 150, the transmission part of the reticle blind 55 is reduced in the X direction, and these mark positions are reduced. Is not irradiated with the exposure light IL.
  • the reticle marks RM1 P, RM1M, RM2 P, RM2M, RM3P, RM3M are not transferred onto the wafer 12, and only the circuit pattern 2P on the reticle 2 is selectively transferred onto the wafer 12. It becomes possible.
  • the luminous flux used for measuring the positions of the reticle-side reference marks RFM and RFP and the wafer-side reference mark WF in Step 100 is limited to the exposure light IL from the exposure light source LS described above, that is, the luminous flux having the same wavelength as the exposure wavelength. It is not done.
  • the projection optical system 11 is a total reflection type optical system, chromatic aberration does not occur in principle even for a light beam having a wavelength different from the exposure wavelength, so a wavelength different from the exposure wavelength is used in the above measurement.
  • a luminous flux that has Specifically, for example, the configuration and adjustment of the calibration mechanism 16 and the like can be simplified by using visible light. .
  • the projection optical system 11 is a catadioptric optical system
  • the chromatic aberration correction ability is superior to that of the all-refractive optical system
  • the above-described calibration is performed using a light beam having a wavelength different from the exposure wavelength. It can be performed.
  • the projection exposure apparatus of this embodiment can also cope with this multiple exposure method.
  • the exposure sequence of the double exposure (the second exposure sequence of this example) performed using two reticles of the multiple exposure will be described with reference to the flowchart of FIG.
  • the steps up to step 140 are the same as the above-described exposure sequence in FIG. 6, and are not shown in FIG.
  • Fig. 7 shows the second exposure sequence of this example.
  • step 130 of Fig. 6 leading to the process of Fig. 7 the reticle loading and reticle mark position measurement are used in double exposure. Performed on one of the two reticles.
  • step 140 the same as step 140 in FIG. 6, the wafer port and the wafer alignment are executed.
  • step 150 exposure to wafer 12 using one reticle is completed by the same process as step 150 in FIG.
  • the process proceeds to step 151, and the reticle is replaced with the other one of the two reticles used in the double exposure. This reticle exchange is performed using a reticle transport mechanism (not shown).
  • the reticle mark on the other reticle is roughly adjusted using a reticle pre-alignment mechanism (not shown), as in the loading of one reticle in step 130 in FIG. Install in place. Subsequently, the position of the reticle mark on the other reticle is measured using the reticle alignment sensors 10M and 10P, similarly to the position measurement of the reticle mark in step 130.
  • step 152 the positional relationship between the reticle alignment sensors 10M, 10P measured in step 151, and the other reticle mark, and the wafer alignment sensor 15 measured in step 140.
  • the wafer mark WM on the wafer 12 and the positional relationship between the wafer-side reference mark WF and the reticle-side reference marks RFM and RFP via the projection optical system 11 measured in step 100 of FIG.
  • the projected image of the pattern on the other reticle on the wafer 12 is aligned and exposed by using.
  • step 160 the wafer 12 is unloaded by a wafer transport mechanism (not shown). Then, confirm whether the wafer to be continuously exposed remains.
  • the exposure is completed. If there is a wafer to be continuously exposed, the flow returns to step 140 to expose the next wafer. In the next exposure at step 150, the other reticle is used. Then, by exchanging the reticle in step 151 after the end of the exposure, the other reticle is exchanged for the one reticle.
  • the projection exposure apparatus can particularly improve the processing capacity (throughput) as compared with the conventional exposure apparatus when applied to the double exposure method.
  • the shape of the opening of the illumination aperture stop ( ⁇ stop) 58 in the illumination optical system 1 is changed in synchronization with the reticle exchange in step 151 in FIG.
  • the shape of the opening of the ⁇ stop 58 may be not only a circle centered on the optical axis ⁇ , but also an annular shape or a plurality of discrete openings. It should be noted that if the illuminance equalizing member 52 is exchangeable in accordance with the respective illumination conditions so that the exposure light can be efficiently concentrated in these opening shapes, the illuminance of the exposure light is substantially reduced. It is preferable because it can be improved.
  • the projection exposure apparatus of the present example includes two reticle interferometers 5c and 5d separated by a distance D3 in the ⁇ direction as interferometers for measuring the position of the reticle stage 3 in the X direction.
  • the movement range of the reticle stage 3 in the Y direction Depending on the length of the movable mirror 4c in the Y direction, either of the measurement light beams of both reticle interferometers 5c and 5d may not be irradiated on the X-axis movable mirror 4c.
  • Reticle interferometers 5c and 5d are mechanisms that measure the relative change in distance from moving mirror 4c, so that moving mirror 4c, which is the position measurement target, generally measures once. If it deviates from the optical path, subsequent position measurement becomes impossible.
  • the position measurement is performed again when it returns to the measurement optical path.
  • the configuration is possible. First, in a state where both the measuring light beams of both reticle interferometers 5c and 5d are irradiated on the X-axis movable mirror 4c, for example, as shown in FIG.
  • the difference between the position measurement values of c and 5 d and the difference between the position measurement values of the reticle interferometers 5 a and 5 b are measured in advance. This is an amount corresponding to the rotation of the reticle stage 3 around the Z axis.
  • the reticle stage 3 is returned to the state shown in Fig. 2 (A), and the reticle interferometer 5c (D The difference between the measured value and the position measured value of the reticle interferometers 5a and 5b is measured.
  • the change in the rotation angle of the reticle stage 3 around the Z axis during both measurements can be measured from the change in the difference between the position measurement values of the reticle interferometers 5a and 5b during both measurements.
  • the difference between the position measurement values of the reticle interferometer 5c and the reticle interferometer 5d in the subsequent measurement is the difference in the initial measurement
  • the change in the rotation angle is the difference between the reticle interferometer 5c and the reticle interferometer 5c.
  • the value multiplied by the distance to 5d is added.
  • the value obtained by adding the above to the measured value of the reticle interferometer 5c at the time of the subsequent measurement is reset as the measured value of the reticle interferometer 5d at that time.
  • the subsequent measurement values can be obtained by adding or subtracting the relative change measured by the reticle interferometer 5d thereafter to this value.
  • the measurement value of the reticle interferometer 5c can be reproduced by the same method. If the method of reproducing the measurement positions of the reticle interferometers 5c and 5d is actively used, the length of the X-axis movable mirror 4c on the reticle stage 3 in the Y direction can be reduced. . Accordingly, the size and weight of the reticle stage 3 itself can be reduced. The position controllability of the tickle stage 3 can be improved and the size of the exposure apparatus can be reduced.
  • the optical axis AX of the projection optical system 11 is used as the origin when setting the coordinate system on the reticle 2 side and setting the coordinate system on the wafer 12 side.
  • the center also coincides with the optical axis AX, but if the exposure field of the projection optical system 11 is eccentric with respect to the optical axis AX, instead of the optical axis AX, the eccentric exposure field
  • the center position can be used as the reference position (coordinate origin).
  • the projection of the reticle-side reference marks RFM and RFP arranged on the object plane of the projection optical system 11 and the wafer-side reference mark WF arranged on the image plane of the projection optical system 11 are performed.
  • the measurement of the positional relationship via the optical system 11 is performed by the wafer-side reference mark WF and the calibration mechanism 16 including the light amount sensor 27 for detecting the amount of transmitted light beam therefrom.
  • the wafer-side reference mark WF and the calibration mechanism 16 including the light amount sensor 27 for detecting the amount of transmitted light beam therefrom it is also possible to measure this positional relationship using a measuring mechanism of the system.
  • a position measurement optical system is provided, a wafer-side reference mark is set at a position corresponding to the image plane of the projection optical system 11 on the wafer stage 14, and the reticle-side reference marks RFM and RFP are respectively coordinated (one D1,0). ), (+ D 1, 0), the positional relationship between the image of the wafer-side reference mark formed on the object plane via the projection optical system 11 and the reticle-side reference marks RFM and RFP is shown.
  • the above-described position measurement optical system may be used for measurement.
  • the illumination of the reference mark on the side of the beam is projected by the position measurement optical system.
  • the illumination may be epi-illumination performed through the system 11, or may be transmissive illumination in which a light source is arranged on the back surface of the wafer-side reference mark and illumination is performed from the back surface.
  • the reticle alignment sensors 10M and 10P are located at positions away from the exposure field of view of the projection optical system 11 and their detection reference positions (measurement origins) 10MC and 1MC.
  • the reticle alignment sensor 10M, 10P can be downsized, and the reticle alignment sensor 10M, 10P can be used as the exposure light beam (pattern on reticle 2). If it is possible to block the light flux that reaches the wafer 12 by injecting the light, there is no problem even if the measurement reference positions 10 MC and 10 PC are arranged within the exposure field of the projection optical system 11. Absent. However, when the projection optical system 11 is located far from the exposure field of view, the restrictions on the size of the reticle alignment sensors 10M and 10P are relaxed, and it is easy to realize a higher-performance optical system. There is an advantage.
  • the exposure light source LS is a light source that emits exposure light having a wavelength of 200 nm or less, such as an ArF laser, the exposure light is strongly absorbed by an absorbing gas such as oxygen in the exposure optical path. Therefore, when such a short-wavelength light source is used, all the exposure light paths from the exposure light source LS to the laser light source 12 are made substantially airtight, and the inside thereof is exposed to exposure light such as nitrogen or a rare gas. It is necessary to replace (gas purge) with a purge gas. However, since it is not easy to completely seal the entire optical path, it is necessary to allow a certain degree of air permeability for some parts, and to send a large amount of purge gas to the parts instead. preferable. For such short-wavelength light, the transmittance of the projection optical system 11 decreases, and as described above, the reticle alignment time increases in the conventional reticle alignment method.
  • the projection optical system 1 1 in terms of color aberration correction, it is unavoidable adoption of the optical system of catadioptric. In this case, the transmittance of the projection optical system 11 is further reduced, and therefore the time required for the conventional reticle alignment is further increased.
  • the wavelength of the exposure light source LS is shortened. However, the reticle alignment time does not increase. Therefore, this example is especially for an exposure apparatus equipped with a short wavelength light source. Suitable for application to
  • the main control system 63 is also configured so that the above-described position measurement can be measured from each photoelectric signal.
  • the reticle-side reference marks RFM and RFP are arranged at a distance of 2 XD 1 XM in the X direction.
  • the reticle-side reference marks RF M and RFP are projected onto the reticle-side reference marks R FM and RF P via the projection optical system 11 on the image side of the projection optical system 11. Projected at a distance of 2 XD 1 XM in the X direction. Therefore, by arranging the two wafer-side reference marks WF in the above-described positional relationship, it is possible to project the two projected images RFMI and RFPI onto the both wafer-side reference marks. Can be measured. Thereby, the measurement time of the positional relationship in step 100 is reduced.
  • one of the two wafer-side reference marks may be used.
  • a special mark for measuring the measurement reference position of the wafer alignment sensor 15 may be provided in the middle of the two wafer-side reference marks or the like, and the measurement may be performed using this mark.
  • the positional relationship between the marks is known from the design coordinate values of the two marks and can be easily corrected, so that the positional deviation caused by using different marks does not matter.
  • the measurement of the positional relationship between the object plane and the image plane via the projection optical system 11 in step 100, and the measurement reference positions 10MC, 10MC of the reticle alignment sensor in step 110 The PC measurement is performed using the reticle-side reference marks RFM and RFP on the reticle-side reference mark plate 8, but these measurements are performed using the reticle marks RM2M and RM2P on the reticle 2. You can also. These reticle marks RM2M and RM2P The mark on the reticle corresponding to the predetermined mark, including the reticle-side reference marks RFM and RFP and the reticle mark (RM2M, RM2P, etc.), corresponds to the first mark. In this case, there is no need to dispose the reticle-side reference mark plate 8 on the reticle stage 3, so that there is an advantage that the reticle stage 3 can be reduced in size.
  • the advantage of using the measurement reference positions 10MC and 10PC of the reticle alignment sensor according to the present invention is small in this case.
  • the reticle alignment sensors 10M and 10P of the present invention can significantly reduce the reticle alignment time and greatly improve the throughput of the exposure apparatus. Can be.
  • the circuit pattern can be exposed and transferred to the resist on the wafer 12. Then, an electronic device can be manufactured using this exposure method.
  • an example of a method for manufacturing an electronic device using the exposure method of the above embodiment will be described.
  • the photosensitive portion (or the non-photosensitive portion) in the resist on the wafer 12 is selectively removed.
  • the circuit pattern 2 P on the reticle 2 is transferred onto the wafer 12 as a resist pattern.
  • the resist pattern is used as an etching mask to perform etching on the thin film on the wafer 12, and a circuit is formed on the thin film layer.
  • the pattern is transferred. A series of steps from the exposure of a pattern to the etching in this way is called a lithographic process.
  • CMOS semiconductor integrated circuit LSI
  • a p-well and an n-well pattern (circuit pattern) should be formed on a silicon single crystal wafer by the lithography and ion implantation steps described above. ) Is formed.
  • element isolation by STI Shal low Trecli Isolation
  • a polysilicon thin film is uniformly formed on the surface of the wafer on which the element isolation has been formed by CVD (Chemical Vapor Deposition) or the like, and the polysilicon is aligned with the STI pattern in the subsequent lithography process.
  • a gate pattern is formed on the thin film. In the lithographic process for forming the gate pattern, a finer pattern is required to be transferred than in other processes. Therefore, a double exposure method is applied as necessary.
  • a sidewall made of an insulating material is formed on the side wall of the gate pattern formed by the above process, ion implantation is performed to form a source and a drain. Then, an insulating film is formed of silicon dioxide, and in the subsequent lithographic process, a minute open pattern is formed in the insulating film in alignment with the gate pattern. In a subsequent step, tungsten or titanium nitride and aluminum are buried in the fine opening pattern to form a conductive electrode (plug). On this, a metal material to be a wiring layer is uniformly formed, and in the subsequent lithographic process, a wiring pattern is formed on this metal layer in alignment with the conductive electrode pattern. .
  • CMOS integrated circuit is completed by forming multiple wiring layers.
  • the following effects can be obtained. (1) In order to measure the position of the reticle alignment mark without using the projection optical system, the measurement time of the reticle alignment mark can be reduced even when using a projection optical system with low transmittance. As a result, the processing capability of the exposure apparatus can be improved, and the time required for the wafer exposure processing can be reduced.
  • the transmittance of a projection optical system is low, and in a conventional exposure apparatus, the time required for measuring a reticle alignment mark increases.
  • the exposure apparatus of the present embodiment can prevent an increase in reticle alignment time even in an exposure apparatus using such short-wavelength exposure light, and has a higher processing capability than a conventional exposure apparatus. Can be demonstrated.
  • the illumination optical system and projection optical system consisting of multiple lenses are incorporated into the main body of the exposure apparatus to perform optical adjustment, and a reticle stage and a wafer stage consisting of many mechanical parts are attached to the main body of the exposure apparatus to perform wiring and piping.
  • the projection exposure apparatus of the above embodiment can be manufactured by connecting and making further overall adjustments (electrical adjustment, operation confirmation, etc.). It is desirable to manufacture the projection exposure apparatus in a clean room where the temperature, cleanliness, etc. are controlled.
  • the magnification of the projection optical system is not limited to a reduction system, and may be any one of an equal magnification and an enlargement system.
  • the present invention can be applied not only to the case where exposure is performed with a scanning exposure type projection exposure apparatus, but also to the case where exposure is performed with a batch exposure type projection exposure apparatus such as a stepper.
  • the present invention provides a method for exposing with an immersion type exposure apparatus disclosed in International Publication No. 99/4954 pamphlet. It can also be applied when performing.
  • the exposure light is not limited to ultraviolet light having a wavelength of about 100 to 400 nm, and is generated from, for example, a laser plasma light source or an S ⁇ R (Synchrotron Orbital Radiation) ring.
  • EUV light Extreme Ultraviolet Light
  • the illumination optical system and the projection optical system each include only a plurality of reflective optical elements. When only such a reflection optical element is used, as described above, light in a wavelength range different from the exposure beam (non-exposure beam) can be used as the mark position measurement light.
  • the application of the projection exposure apparatus of the above embodiment is not limited to the exposure apparatus for manufacturing a semiconductor element, but may be, for example, a liquid crystal display element formed on a square glass plate or a plasma display.
  • the present invention can be widely applied to an exposure apparatus for a display apparatus and an exposure apparatus for manufacturing various devices such as an image pickup device (CCD or the like), a micromachine, a thin-film magnetic head, or a DNA chip.
  • the present invention can be applied to an exposure step (exposure apparatus) when a reticle (photomask or the like) on which a reticle pattern of various devices is formed using a photolithographic process.
  • the positional relationship between the mark on the mask stage side and the mark on the substrate stage side is measured in advance through the projection optical system, and thereafter, the projection optical system is changed by the mark detection system on the mask side.
  • the mask By measuring the position of a predetermined mark on the mask without any intervention, the mask can be accurately positioned. Therefore, for example, the transmittance of the projection optical system is reduced by using vacuum ultraviolet light as an exposure beam, Or, even if the number of marks on the mask to be measured increases, the increase in the mask alignment time associated with the increase can be minimized, and a high throughput can be obtained.
  • the mask and the substrate can be accurately aligned.
  • a mark on a mask can be easily moved to a detection area of a second mark detection system by driving a mask stage for scanning. There is no need to change the mechanism.
  • the alignment time can be shortened, so that high-performance devices can be mass-produced with higher productivity.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un procédé d'exposition par projection pouvant minimiser un temps d'alignement de réticule pour obtenir un haut rendement même si le facteur de transmission d'un système optique de projection est réduit ou si le nombre de repères de réticule augmente. Une plaque à repère de référence côté réticule (8) présentant un premier repère de référence est placée sur un étage de réticule (2) et un capteur d'alignement de réticule (10) est disposé dans une position éloignée d'un système optique de projection (11) dans une direction de balayage réglée sur le temps d'exposition de balayage. La relation de position entre le premier repère de référence et un deuxième repère de référence côté étage de plaquette (14) est mesurée en avance par un mécanisme d'étalonnage (16) par l'intermédiaire du système optique de projection (11). Suite à cette mesure, la relation de position entre le premier repère de référence et un repère de réticule est mesurée par le capteur d'alignement de réticule (10) ; la relation de position entre le deuxième repère de référence et un repère de plaquette est mesurée par un capteur d'alignement de plaquette (15) puis le réticule (2) et la plaquette (12) sont alignés sur la base des résultats de ces mesures.
PCT/JP2004/000912 2003-02-05 2004-01-30 Unite et procede d'exposition par projection et procede de production de dispositif WO2004077535A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010245105A (ja) * 2009-04-01 2010-10-28 Mitsubishi Electric Corp 露光装置および露光方法

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JPH07176468A (ja) * 1993-02-26 1995-07-14 Nikon Corp 投影露光方法
JPH0950955A (ja) * 1995-08-09 1997-02-18 Nikon Corp 走査型露光装置及び露光方法
JPH09283417A (ja) * 1996-04-19 1997-10-31 Nikon Corp 露光装置
JPH1064811A (ja) * 1996-08-23 1998-03-06 Canon Inc 投影露光装置および位置合せ方法
JP2001332490A (ja) * 2000-03-14 2001-11-30 Nikon Corp 位置合わせ方法、露光方法、露光装置、及びデバイス製造方法
JP2002353088A (ja) * 2001-05-22 2002-12-06 Canon Inc 位置検出方法及び位置検出装置

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Publication number Priority date Publication date Assignee Title
JPH07176468A (ja) * 1993-02-26 1995-07-14 Nikon Corp 投影露光方法
JPH0950955A (ja) * 1995-08-09 1997-02-18 Nikon Corp 走査型露光装置及び露光方法
JPH09283417A (ja) * 1996-04-19 1997-10-31 Nikon Corp 露光装置
JPH1064811A (ja) * 1996-08-23 1998-03-06 Canon Inc 投影露光装置および位置合せ方法
JP2001332490A (ja) * 2000-03-14 2001-11-30 Nikon Corp 位置合わせ方法、露光方法、露光装置、及びデバイス製造方法
JP2002353088A (ja) * 2001-05-22 2002-12-06 Canon Inc 位置検出方法及び位置検出装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010245105A (ja) * 2009-04-01 2010-10-28 Mitsubishi Electric Corp 露光装置および露光方法

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