WO2004077495A3 - Composant optoelectronique comportant une structure verticale semi-conductrice - Google Patents

Composant optoelectronique comportant une structure verticale semi-conductrice Download PDF

Info

Publication number
WO2004077495A3
WO2004077495A3 PCT/FR2004/000395 FR2004000395W WO2004077495A3 WO 2004077495 A3 WO2004077495 A3 WO 2004077495A3 FR 2004000395 W FR2004000395 W FR 2004000395W WO 2004077495 A3 WO2004077495 A3 WO 2004077495A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
level
called
valence band
doped
Prior art date
Application number
PCT/FR2004/000395
Other languages
English (en)
Other versions
WO2004077495A2 (fr
Inventor
Jerome Damon-Lacoste
Francois Laruelle
Original Assignee
Avanex France S A
Jerome Damon-Lacoste
Francois Laruelle
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avanex France S A, Jerome Damon-Lacoste, Francois Laruelle filed Critical Avanex France S A
Publication of WO2004077495A2 publication Critical patent/WO2004077495A2/fr
Publication of WO2004077495A3 publication Critical patent/WO2004077495A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

La présente invention concerne un composant optoélectronique (10) comportant une structure verticale semi-conductrice comprenant une région de circulation d'un courant de trous (R2) et une couche active (CA), ladite région de circulation d'un courant de trous comprenant une première couche (2) semi-conductrice et dopée p, de niveau de bande de valence donné dit premier niveau, une deuxième couche (4) semi-conductrice, dite couche barrière, de niveau de bande de valence donné, dit deuxième niveau, inférieur au premier niveau, une troisième couche (6) semi-conductrice et dopée p, de niveau de bande de valence donné, dit troisième niveau, distinct du deuxième niveau, et comportant une couche semi-conductrice dopée p, dite couche d'adaptation de bande (3). La couche barrière (4) est une couche d'arrêt de gravure. Le composant comprend en outre une couche semi-conductrice, dite de transition de bande (5), disposée entre la couche barrière (4) et la troisième couche, et ayant une composition en semi-conducteurs graduellement variable pour assurer une transition de niveaux de bande de valence sensiblement continue entre lesdits deuxième et troisième niveaux.
PCT/FR2004/000395 2003-02-20 2004-02-20 Composant optoelectronique comportant une structure verticale semi-conductrice WO2004077495A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0302094A FR2851692B1 (fr) 2003-02-20 2003-02-20 Composant optoelectronique comportant une structure verticale semi-conductrice
FR03/02094 2003-02-20

Publications (2)

Publication Number Publication Date
WO2004077495A2 WO2004077495A2 (fr) 2004-09-10
WO2004077495A3 true WO2004077495A3 (fr) 2005-02-17

Family

ID=32799461

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2004/000395 WO2004077495A2 (fr) 2003-02-20 2004-02-20 Composant optoelectronique comportant une structure verticale semi-conductrice

Country Status (2)

Country Link
FR (1) FR2851692B1 (fr)
WO (1) WO2004077495A2 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5345464A (en) * 1992-12-21 1994-09-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser
US6160829A (en) * 1997-05-21 2000-12-12 Nec Corporation Self-sustained pulsation semiconductor laser
US20010028668A1 (en) * 2000-04-10 2001-10-11 Toshiaki Fukunaga Semiconductor laser element
US6304587B1 (en) * 1999-06-14 2001-10-16 Corning Incorporated Buried ridge semiconductor laser with aluminum-free confinement layer
US20020187577A1 (en) * 2001-06-11 2002-12-12 Sharp Kabushiki Kaisha Semiconductor laser device and process for producing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5345464A (en) * 1992-12-21 1994-09-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser
US6160829A (en) * 1997-05-21 2000-12-12 Nec Corporation Self-sustained pulsation semiconductor laser
US6304587B1 (en) * 1999-06-14 2001-10-16 Corning Incorporated Buried ridge semiconductor laser with aluminum-free confinement layer
US20010028668A1 (en) * 2000-04-10 2001-10-11 Toshiaki Fukunaga Semiconductor laser element
US20020187577A1 (en) * 2001-06-11 2002-12-12 Sharp Kabushiki Kaisha Semiconductor laser device and process for producing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HOBSON W S ET AL: "INGAAS/ALGAAS RIDGE WAVEGUIDE LASERS UTILIZING AN INGAP ETCH-STOP LAYER", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, INSTITUTE OF PHYSICS. LONDON, GB, vol. 7, no. 11, 1 November 1992 (1992-11-01), pages 1425 - 1427, XP000336276, ISSN: 0268-1242 *

Also Published As

Publication number Publication date
FR2851692B1 (fr) 2005-12-09
WO2004077495A2 (fr) 2004-09-10
FR2851692A1 (fr) 2004-08-27

Similar Documents

Publication Publication Date Title
WO2003017352A3 (fr) Commande de courant sur des dispositifs a semi-conducteurs sur tranche au moyen de motifs de surcouche
TW200707803A (en) Nitride based semiconductor element and method for fabricating the same
GB0107408D0 (en) Field effect transistor structure and method of manufacture
TW587355B (en) Nitride semiconductor device
WO2007036164A8 (fr) Dispositif electroluminescent a semi-conducteur et son procede de fabrication
ATE410786T1 (de) Schichten in substratscheiben
WO2006063233A3 (fr) Dispositif photoconducteur
TW429660B (en) Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device
WO2004019383A3 (fr) Contacts autoalignes vis-a-vis des grilles
DE69507437T2 (de) Lichtemittierende diode mit einer aktiven schicht aus 2,5-substituiertem poly( p-phenylen-vinylen)
SG162733A1 (en) Circuit structure and fabrication method thereof
WO2007036456A3 (fr) Diode de puissance sic-pn
WO2007053686A3 (fr) Matériaux et dispositifs semi-conducteurs intégrés monolithiquement
WO2008051503A3 (fr) Dispositifs base sur une source de lumière munie de structures semi-conductrices a désaccord de réseau
WO2006023026A3 (fr) Procede permettant de former un dispositif semi-conducteur et un structure correspondante
EP1361616A4 (fr) Element semi-conducteur compose a base de nitrure du groupe iii des elements
WO2002003474A3 (fr) Lamine semi-conducteur a nitrure de type n et dispositif a semi-conducteur faisant intervenir ledit lamine
WO2008106284A3 (fr) Ensemble microélectronique avec performance de tension d'isolation améliorée et procédé de formation associé
EP1383176A4 (fr) Element luminescent a semi-conducteurs contenant un compose de nitrure du groupe iii
KR900005589A (ko) 반도체 집적회로 장치 및 그 제조방법
KR960701482A (ko) 피(p)형 II-VI족 반도체의 경사형 조성의 오믹 접촉(GRADED COMPOSITION OHMIC CONTACT FOR P-TYPE II-IV SEMICONDUCTORS)
EP1403912A4 (fr) Procede de production d'un semiconducteur au nitrure iii
WO2004077495A3 (fr) Composant optoelectronique comportant une structure verticale semi-conductrice
WO2004088745A1 (fr) Dispositif a semiconducteur
TW200509185A (en) Semiconductor device and method of manufacturing the same

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase