WO2004072319A2 - Free-standing diamond structures and methods - Google Patents

Free-standing diamond structures and methods Download PDF

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Publication number
WO2004072319A2
WO2004072319A2 PCT/US2004/003518 US2004003518W WO2004072319A2 WO 2004072319 A2 WO2004072319 A2 WO 2004072319A2 US 2004003518 W US2004003518 W US 2004003518W WO 2004072319 A2 WO2004072319 A2 WO 2004072319A2
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WO
WIPO (PCT)
Prior art keywords
diamond
substrate
layer
facets
sub
Prior art date
Application number
PCT/US2004/003518
Other languages
French (fr)
Other versions
WO2004072319A3 (en
Inventor
Gerald T. Mearini
James A. Dayton, Jr.
Original Assignee
Genvac Aerospace Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Genvac Aerospace Corporation filed Critical Genvac Aerospace Corporation
Priority to JP2006503393A priority Critical patent/JP2007524554A/en
Priority to AU2004211648A priority patent/AU2004211648B2/en
Priority to EP04709095A priority patent/EP1601807A4/en
Priority to CA002515196A priority patent/CA2515196A1/en
Publication of WO2004072319A2 publication Critical patent/WO2004072319A2/en
Publication of WO2004072319A3 publication Critical patent/WO2004072319A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0254—Physical treatment to alter the texture of the surface, e.g. scratching or polishing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate

Definitions

  • the present invention relates to free-standing objects having laboratory grown diamond surfaces and methods for fabricating such objects. More particularly s the present invention is directed to such objects and methods wherein the outer surface of the object includes a plurality of intersecting facets having a diamond layer.
  • Diamond is one of the most technologically and scientifically Tamable materials found in nature due to its combination of high resistance to thermal shock; extreme hardness, excellent infrared transparency, and excellent semiconductor _ properties.
  • Diamond has the highest known isotropic thermal conductivity and a relatively low expansion coefficient thus providing it with desirable resistance to thermal shock. Because of these properties, diamond has found increasing use as a thermal management material in electronic packaging of devices such as high power laser diodes, multichip modules, and other microelectronic devices.
  • Diamond is also the hardest known material and has desirable resistance to abrasion. Thus diamond components and coatings have found increasing use as wear resistance elements in various mechanical devices and in cutting and grinding tools. Diamond is also highly resistant to corrosion.
  • Diamond is also a good electrical insulator, but can be synthesized to be electrically conducting by the addition of certain elements such as boron to the growth atmosphere. Diamond is also used in many semiconductor devices including high-power transistors, resistors, capacitors, FET's, and integrated circuits.
  • Diamond synthesis by CVD has become a well established art. It is known that diamond coatings on various objects may be synthesized, as well as free-standing objects. Typically, the free-standing objects have been fabricated by deposition of diamond on planar substrates or substrates having relatively simple cavities formed therein.
  • U.S. Patent No. 6,132,278 discloses forming solid generally pyramidal or conical diamond microchip emitters by plasma enhanced CVD by growing diamond to fill cavities formed in the silicon substrate.
  • Figure 1 is an illustration showing the steps of the preferred embodiment of the present invention.
  • the present invention is directed to methods of making freestanding, internally-supported, three-dimensional objects having a diamond layer on at least a portion of the outer surface of the object.
  • the diamond layer may be formed by any method of synthesizing diamond such as high-pressure, high-temperature (HPHT) methods or CVD.
  • HPHT high-pressure, high-temperature
  • CVD chemical vapor deposition
  • a mixture of hydrogen and carbon-containing gases is activated to obtain a region of gas-phase non- equilibrium adjacent the substrate on which the diamond will be grown.
  • the carbon- containing gas may be selected from a large variety of gases including methane, aliphatic and aromatic hydrocarbons, alcohols, ketones, amines, esters, carbon monoxide, carbon dioxide, and halogens. Methane is used according to the preferred embodiment of the invention.
  • the mixture of gases is energized to obtain a region of gas-phase non- equilibrium adjacent the substrate on which the diamond will be grown.
  • gas- phase activation techniques may be used and these techniques may be categorized as either hot-filament CVD, plasma-assisted CVD, or flame CVD.
  • plasma-assisted CVD the plasma may be generated by a number of energy sources including microwave, radio- frequency, or direct current electric fields.
  • the substrate may be any material suitable for nucleating and growing diamond such as semiconductor, metal, and insulator materials.
  • the nucleation rates are much higher on carbide forming substrates (e.g., Si, Mo, and W) than on substrates that do not form carbides.
  • carbide forming substrates e.g., Si, Mo, and W
  • silicon substrates are used in view of the desirable nucleation rates and well known fabrication techniques of silicon.
  • the surface of the substrate on which the diamond will be grown may be pretreated by various techniques to enhance diamond nucleation and improve the nucleation density of diamond on the surface.
  • Such methods may include (i) scratching, abrading, or blasting the surface with diamond particles or paste, (ii) seeding the surface with submicron powders such as diamond, silicon, or cBN, (iii) biasing the substrate, (iv) carburization, (v) pulsed laser irradiation, and (vi) ion implantation.
  • a free-standing, internally-supported, three-dimensional object having an outer surface comprising a plurality of intersecting facets wherein at least a sub-set of the intersecting facets have a diamond layer of substantially uniform depth.
  • face as used herein, includes a surface or face that is either planar or non-planar.
  • Figure 1 illustrates the various steps of the preferred embodiment of the present invention.
  • a silicon substrate 10 is fabricated using conventional fabrication techniques to form a mold having an exposed surface 12 defining the sub-set of intersecting facets.
  • a diamond layer 14 of generally uniform thickness is grown over the exposed surface 12 of the substrate 10 by any suitable method such as hot- filament CVD or plasma-assisted CVD.
  • the exposed surface 12 may be pretreated by any suitable technique to enhance the diamond nucleation and nucleation density on the exposed surface. Typically, the exposed surface is pretreated by seeding the surface with carbon atoms 16. The pretreatment of the exposed surface may be important in order to ensure growth of the diamond in the shape of the sub-set of facets which may be relatively complex.
  • a backing layer 18 may be formed over at least portions of the exposed surface of the newly grown diamond layer to provide structural support to the diamond layer when the substrate is removed. Any material that will adhere to the exposed diamond and enhance the rigidity of the diamond layer 14 is suitable for the backing layer 18 (e.g., epoxy, plastic, viscous polymers that harden, glass, etc.).
  • the backing layer may be electrically conductive or non-conductive as desired.
  • the substrate 10 is removed to expose the surface 20 of the diamond layer 14 grown contiguous to the substrate which has been defined by the mold formed by the substrate.
  • the substrate 10 may be removed by any suitable means such as chemical etching.
  • the diamond layer 14 may then be treated as desired.
  • the free-standing objects made according to the present invention may find utility in a variety of applications such as backward wave oscillators, bi-polar plates for fuel cells, traveling wave tubes, microchannel plates, and a multitude of other devices having a surface comprising a plurality of intersecting facets wherein a sub-set of intersecting facets have a diamond layer of substantially uniform thickness.

Abstract

The present invention is directed in one aspect to methods of making free-standing, internally-supported, three-dimensional objects having an outer surface comprising a plurality of intersecting facets wherein a sub-set of the intersecting facets have a diamond layer of substantially uniform thickness. The diamond layer may be formed by chemical vapor deposition (CVD) over the surface of a substrate that has been fabricated to form a mold defining the sub-set of intersecting facets. A backing layer may be formed over at least a portion of the exposed diamond layer to enhance the rigidity of the layer when the substrate is removed.

Description

FREE-STANDING DIAMOND STRUCTURES AND METHODS
CLAIM OF PRIORITY
[0001] This application claims the benefit of the filing date priority of U.S. Provisional Application No. 60/445,237 filed February 6, 2003; No. 60/494,089 filed August 12, 2003; and No. 60/494,095 filed August 12, 1003.
BACKGROUND OF THE INVENTION
[0002] The present invention relates to free-standing objects having laboratory grown diamond surfaces and methods for fabricating such objects. More particularlys the present invention is directed to such objects and methods wherein the outer surface of the object includes a plurality of intersecting facets having a diamond layer.
[0003] Diamond is one of the most technologically and scientifically Tamable materials found in nature due to its combination of high resistance to thermal shock; extreme hardness, excellent infrared transparency, and excellent semiconductor _ properties.
[0004] Diamond has the highest known isotropic thermal conductivity and a relatively low expansion coefficient thus providing it with desirable resistance to thermal shock. Because of these properties, diamond has found increasing use as a thermal management material in electronic packaging of devices such as high power laser diodes, multichip modules, and other microelectronic devices.
[0005] Diamond is also the hardest known material and has desirable resistance to abrasion. Thus diamond components and coatings have found increasing use as wear resistance elements in various mechanical devices and in cutting and grinding tools. Diamond is also highly resistant to corrosion.
[0006] Diamond is also a good electrical insulator, but can be synthesized to be electrically conducting by the addition of certain elements such as boron to the growth atmosphere. Diamond is also used in many semiconductor devices including high-power transistors, resistors, capacitors, FET's, and integrated circuits.
[0007] The scarcity and high cost of natural diamond has prohibited its widespread commercial use. However, the development of various methods for synthesizing diamond has made the widespread commercial use of diamond possible. The most commercially promising method for synthesizing diamond includes the growth of diamond by chemical vapor deposition (CVD).
[0008] Diamond synthesis by CVD has become a well established art. It is known that diamond coatings on various objects may be synthesized, as well as free-standing objects. Typically, the free-standing objects have been fabricated by deposition of diamond on planar substrates or substrates having relatively simple cavities formed therein. For example, U.S. Patent No. 6,132,278 discloses forming solid generally pyramidal or conical diamond microchip emitters by plasma enhanced CVD by growing diamond to fill cavities formed in the silicon substrate. However, there remains a need for methods of making free-standing, internally-supported, three-dimensional objects having an outer surface comprising a plurality of intersecting facets (planar or non- planar), wherein at least a sub-set of the intersecting facets have a diamond layer.
[0009] Accordingly, it is an object of the present invention to obviate many of the deficiencies in the prior art and to provide novel methods of making free-standing structures having diamond surfaces.
[0010] It is another object of the present invention to provide novel methods of making structures using diamond CVD.
[0011] It is yet another object of the present invention to provide novel structures formed by diamond CVD.
[0012] It is still another object of the present invention to provide novel methods of making free-standing structures having an exposed diamond surface. [0013] It is a further object of the present invention to provide novel methods of making internally-supported structures having an exposed diamond surface.
[0014] These and many other objects and advantages of the present invention will be readily apparent to one skilled in the art to which the invention pertains from a perusal of the claims, the appended drawings, and the following detailed description of the preferred embodiments.
DETAILED DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 is an illustration showing the steps of the preferred embodiment of the present invention.
DESCRIPTION OF PREFERRED EMBODIMENTS
[0016] In one aspect, the present invention is directed to methods of making freestanding, internally- supported, three-dimensional objects having a diamond layer on at least a portion of the outer surface of the object. The diamond layer may be formed by any method of synthesizing diamond such as high-pressure, high-temperature (HPHT) methods or CVD. In accordance with the preferred embodiment of the present invention, the diamond is synthesized by CVD.
[0017] In the diamond CVD methods according to the present invention, a mixture of hydrogen and carbon-containing gases is activated to obtain a region of gas-phase non- equilibrium adjacent the substrate on which the diamond will be grown. The carbon- containing gas may be selected from a large variety of gases including methane, aliphatic and aromatic hydrocarbons, alcohols, ketones, amines, esters, carbon monoxide, carbon dioxide, and halogens. Methane is used according to the preferred embodiment of the invention.
[0018] The mixture of gases is energized to obtain a region of gas-phase non- equilibrium adjacent the substrate on which the diamond will be grown. A variety of gas- phase activation techniques may be used and these techniques may be categorized as either hot-filament CVD, plasma-assisted CVD, or flame CVD. In plasma-assisted CVD the plasma may be generated by a number of energy sources including microwave, radio- frequency, or direct current electric fields.
[0019] The substrate may be any material suitable for nucleating and growing diamond such as semiconductor, metal, and insulator materials. Generally, the nucleation rates are much higher on carbide forming substrates (e.g., Si, Mo, and W) than on substrates that do not form carbides. According to the preferred embodiment of the present invention, silicon substrates are used in view of the desirable nucleation rates and well known fabrication techniques of silicon.
[0020] The surface of the substrate on which the diamond will be grown may be pretreated by various techniques to enhance diamond nucleation and improve the nucleation density of diamond on the surface. Such methods may include (i) scratching, abrading, or blasting the surface with diamond particles or paste, (ii) seeding the surface with submicron powders such as diamond, silicon, or cBN, (iii) biasing the substrate, (iv) carburization, (v) pulsed laser irradiation, and (vi) ion implantation.
[0021] In accordance with the preferred embodiment of the present invention, a free-standing, internally-supported, three-dimensional object is provided having an outer surface comprising a plurality of intersecting facets wherein at least a sub-set of the intersecting facets have a diamond layer of substantially uniform depth. The term "facet" as used herein, includes a surface or face that is either planar or non-planar.
[0022] Figure 1 illustrates the various steps of the preferred embodiment of the present invention. With reference to Figure 1, a silicon substrate 10 is fabricated using conventional fabrication techniques to form a mold having an exposed surface 12 defining the sub-set of intersecting facets. A diamond layer 14 of generally uniform thickness is grown over the exposed surface 12 of the substrate 10 by any suitable method such as hot- filament CVD or plasma-assisted CVD. [0023] The exposed surface 12 may be pretreated by any suitable technique to enhance the diamond nucleation and nucleation density on the exposed surface. Typically, the exposed surface is pretreated by seeding the surface with carbon atoms 16. The pretreatment of the exposed surface may be important in order to ensure growth of the diamond in the shape of the sub-set of facets which may be relatively complex.
[0024] In some instances, a backing layer 18 may be formed over at least portions of the exposed surface of the newly grown diamond layer to provide structural support to the diamond layer when the substrate is removed. Any material that will adhere to the exposed diamond and enhance the rigidity of the diamond layer 14 is suitable for the backing layer 18 (e.g., epoxy, plastic, viscous polymers that harden, glass, etc.). The backing layer may be electrically conductive or non-conductive as desired.
[0025] Once the backing layer 18 is formed as desired, the substrate 10 is removed to expose the surface 20 of the diamond layer 14 grown contiguous to the substrate which has been defined by the mold formed by the substrate. The substrate 10 may be removed by any suitable means such as chemical etching. The diamond layer 14 may then be treated as desired.
[0026] The free-standing objects made according to the present invention may find utility in a variety of applications such as backward wave oscillators, bi-polar plates for fuel cells, traveling wave tubes, microchannel plates, and a multitude of other devices having a surface comprising a plurality of intersecting facets wherein a sub-set of intersecting facets have a diamond layer of substantially uniform thickness.
[0027] While preferred embodiments of the present invention have been described, it is to be understood that the embodiments described are illustrative only and that the scope of the invention is to be defined solely by the appended claims when accorded a full range of equivalence, many variations and modifications naturally occurring to those of skill in the art from a perusal hereof.

Claims

WHAT IS CLAIMED IS:
1. A method of making a free-standing, internally- supported, three-
dimensional object, the outer surface of the object comprising a plurality of intersecting
facets, at least a sub-set of said intersecting facets having a diamond layer of substantially
uniform depth, said method comprising the steps of:
(a) providing a mold having an exposed surface defining the sub-set of
intersecting facets;
(b) growing a diamond layer of substantially uniform depth over the exposed
surface;
(c) depositing a backing layer over at least a portion of the diamond layer; and
(d) removing the mold to expose the surface of the diamond layer grown
immediately contiguous to the mold.
2. The method of Claim 1 wherein the mold is a silicon substrate fabricated to
define the sub-set of intersecting facets.
3. The method of Claim 2 wherein the mold is removed by chemical etching.
4. The method of Claim 1 further including the step of pretreating the exposed
surface of the mold to enhance the growth of the diamond layer.
5. The method of Claim 4 wherein carbon atoms are deposited on the exposed
surface of the mold to enhance the growth of the diamond layer.
6. The method of Claim 5 wherein the carbon atoms are deposited on the
exposed surface of the mold by exposing the surface to a carbon containing plasma.
7. The method of Claim 1 wherein the sub-set of intersecting facets includes
planar facets.
8. The method of Claim 1 wherein the sub-set of intersecting facets includes
non-planar facets.
9. A method of fabricating a free-standing object comprising a three-
dimensional structure covered by a diamond film having an exposed surface, said method
comprising the steps of:
growing a diamond film on a preselected exposed surface of a substrate;
providing a backing on at least a portion of the grown diamond film; and
removing the substrate to expose the diamond surface defined by the preselected
surface of the substrate on which the diamond was grown.
10. The method of Claim 9 wherein the substrate is silicon.
11. The method of Claim 9 including the further step of pretreating the
preselected exposed surface to enhance the growth of diamond thereon.
12. The method of Claim 11 wherein a carbon seed layer is formed on the
preselected exposed surface of the substrate.
13. The method of Claim 9 wherein the preselected surface of the substrate
includes the intersection of two facets.
14. A method of fabricating a free-standing, internally-supported, three-
dimensional object, the outer surface of the object comprising a plurality of intersecting
facets, at least a sub-set of said intersecting facets having an exposed diamond surface,
said method comprising the steps of: growing a diamond film on a preselected exposed surface of a substrate;
providing a backing layer covering at least a portion of the grown diamond film;
and
removing the substrate so that the exposed diamond surface is the surface grown
immediately contiguous to the substrate.
15. The method of Claim 14 wherein the substrate is silicon.
16. The method of Claim 15 wherein the substrate is removed by chemical
etching.
17. The method of Claim 14 wherein the backing layer covers the entire
diamond film.
18. The method of Claim 14 wherein the backing layer is electrically
conducting.
19. The method of Claim 14 wherein the backing layer is electrically non¬
conducting.
20. The method of Claim 19 wherein the backing layer is epoxy.
21. The method of Claim 14 including the further step of forming a carbon seed
layer on the preselected exposed surface of the substrate to facilitate the growth of the
diamond film thereon.
22. The method of Claim 21 wherein the diamond seed layer is formed by
exposing the preselected exposed surface of the substrate to a carbon containing activated
gas.
23. The method of Claim 22 wherein the diamond seed layer is formed by:
grounding the substrate; providing ionized carbon atoms; and exposing the preselected exposed surface of the substrate to the ionized carbon
atoms.
24. The method of Claim 22 wherein the activated gas is a plasma.
25. The method of Claim 24 wherein the plasma is formed by energizing a
mixture of hydrogen and hydrocarbon gases.
26. The method of Claim 22 wherein the diamond seed layer is formed by
chemical vapor deposition.
27. The method of Claim 14 wherein the diamond is grown by chemical vapor
deposition.
28. The method of Claim 14 wherein the intersecting facets include planar
facets.
29. The method of Claim 14 wherein the intersecting facets include non-planar
facets.
30. The method of Claim 14 wherein the exposed diamond surface forms the
surface of a waveguide.
31. The method of Claim 14 wherein the object is a bi-polar plate for a fuel
cell.
32. A method of making a free-standing, internally-supported, three-
dimensional object, the outer surface of the object comprising a plurality of intersecting facets, at least a sub-set of said intersecting facets having a diamond layer of substantially
uniform depth, said method comprising the steps of:
(a) fabricating a silicon substrate to provide a molding surface defining the
sub-set of intersecting facets;
(b) seeding the molding surface of the substrate with carbon;
(c) growing a diamond layer of substantially uniform depth over the molding
surface of the substrate;
(d) forming an internally-supporting backing layer over the diamond layer; and
(e) chemically etching the substrate to expose the surface of the diamond layer
grown contiguous to the molding surface of the substrate.
33. The method of Claim 32 wherein molding surface is seeded by chemical
vapor deposition.
34. The method of Claim 32 wherein the diamond layer is grown by chemical
vapor deposition.
PCT/US2004/003518 2003-02-06 2004-02-06 Free-standing diamond structures and methods WO2004072319A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006503393A JP2007524554A (en) 2003-02-06 2004-02-06 Free-standing diamond structure and method
AU2004211648A AU2004211648B2 (en) 2003-02-06 2004-02-06 Free-standing diamond structures and methods
EP04709095A EP1601807A4 (en) 2003-02-06 2004-02-06 Free-standing diamond structures and methods
CA002515196A CA2515196A1 (en) 2003-02-06 2004-02-06 Free-standing diamond structures and methods

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US44523703P 2003-02-06 2003-02-06
US60/445,237 2003-02-06
US49409503P 2003-08-12 2003-08-12
US49408903P 2003-08-12 2003-08-12
US60/494,089 2003-08-12
US60/494,095 2003-08-12

Publications (2)

Publication Number Publication Date
WO2004072319A2 true WO2004072319A2 (en) 2004-08-26
WO2004072319A3 WO2004072319A3 (en) 2006-08-17

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Country Link
EP (1) EP1601807A4 (en)
JP (1) JP2007524554A (en)
KR (1) KR100700339B1 (en)
AU (1) AU2004211648B2 (en)
CA (1) CA2515196A1 (en)
WO (1) WO2004072319A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2504380A (en) * 2012-05-28 2014-01-29 Element Six Ltd Free-standing non-planar polycrystalline synthetic diamond components

Families Citing this family (2)

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