CA2515196A1 - Free-standing diamond structures and methods - Google Patents

Free-standing diamond structures and methods Download PDF

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Publication number
CA2515196A1
CA2515196A1 CA002515196A CA2515196A CA2515196A1 CA 2515196 A1 CA2515196 A1 CA 2515196A1 CA 002515196 A CA002515196 A CA 002515196A CA 2515196 A CA2515196 A CA 2515196A CA 2515196 A1 CA2515196 A1 CA 2515196A1
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Prior art keywords
diamond
substrate
layer
facets
exposed surface
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CA002515196A
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French (fr)
Inventor
Gerald T. Mearini
James A. Dayton, Jr.
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Genvac Aerospace Corp
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Genvac Aerospace Corp
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Publication of CA2515196A1 publication Critical patent/CA2515196A1/en
Abandoned legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/18Epitaxial-layer growth characterised by the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02Pretreatment of the material to be coated
    • C23C16/0227Pretreatment of the material to be coated by cleaning or etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02Pretreatment of the material to be coated
    • C23C16/0254Physical treatment to alter the texture of the surface, e.g. scratching or polishing
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/10Heating of the reaction chamber or the substrate
    • C30B25/105Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention is directed in one aspect to methods of making free-standing, internally-supported, three-dimensional objects having an outer surface comprising a plurality of intersecting facets wherein a sub-set of the intersecting facets have a diamond layer of substantially uniform thickness.
The diamond layer may be formed by chemical vapor deposition (CVD) over the surface of a substrate that has been fabricated to form a mold defining the sub-set of intersecting facets. A backing layer may be formed over at least a portion of the exposed diamond layer to enhance the rigidity of the layer when the substrate is removed.

Description

FREE-STANDING DIAMOND STRUCTURES AND METHODS
CLAIM OF PRIORITY
[0001] This application claims the benefit of the filing date priority of U.S.
Provisional Application No. 601445,237 :fled February 6, 2003; No. 60/494,089 filed August 12, 2003; and No. 60/494,095 filed August 12, 1003.
BACKGR~UND ~F THE INVENTI~N
[0002] The present invention relates to free-standing objects having laboratory grown diamond surfaces and methods f~r fabricating such objects. fore parhicularly, the present invention is directed to such objects and methods wherein the outer surface of the object includes a plurality of intersecting facets having a diamond layer.
[0~03] hiamond is one of the host ~;echnologically and scientifically valuable materials found in nature due to its combination of high resistance to thermal shocks e~~treme hardness, excellent infrared transparency, and excellent semiconductor , proper ties.
[~004] Diamond has the highest l~nown isotropic thermal c~r~ductivity and a relatively low expansion coefficient thus providing it with desirable resistance to thermal shock. Because of these pxoperties, diamond has found increasing use as a thermal management material in electronic packaging of devices such as high power laser diodes, ultichip anodules, and other microelectronic devices.
[0005] Diamond is also the hardest known material and has desirable resistance to abrasion. Thus diamond components and coatings have found increasing use as wear resistance elements in various mechanical devices and in cutting and grinding tools.
Diamond is also highly resistant to corrosion.
[0006] Diamond is also a good electrical insulator, but can be synthesized to be electrically conducting by the addition of certain elements such as boron to the growth SUBSTITUTE SHEET (R,ULE 26) atmosphere. Diamond is also used in many semiconductor devices including high-power transistors, resistors, capacitors, FET's, and integrated circuits.
[0007] The scarcity and high cost of natural diamond has prohibited its widespread commercial use. However, the development of various methods for synthesizing diamond has made the widespread commercial use of diamond possible. The most commercially promising method for synthesizing diamond includes the growth of diamond by chemical vapor deposition (CVD).
(000] Diamond synthesis by CVD has become a well established art. It is known that diamond coatings on various objects may be synthesized, as well as free-standing objects. Typically, the free-standing objects have been fabricated by deposition of diamond on planar substrates or substrates having relatively simple cavities formed therein. For example, LT.S. Patent l~To. 69132,27 discloses forming solid generally pyramidal or conical diamond microchip emitters by plasma enhanced CVD by growing diamond to fill cavities formed in the silicon substrate. However, there remains a need for methods of making free-standing, internally-supported, three-dimensional obj acts having an outer surface comprising a plurality of intersecting facets (planar or non-planar), wherein at least a sub-set of the intersecting facets have a diamond layer.
[0009] Accordingly, it is an object of the present invention to obviate many of the deficiencies in the prior art and to provide novel methods of making free-standing structures having diamond surfaces.
[0010] It is another object of the present invention to provide novel methods of making structures using diamond CVD.
[0011] It is yet another object of the present invention to provide novel structures formed by diamond CVD.
[0012] It is still another object of the present invention to provide novel methods of making free-standing structures having an exposed diamond surface.

[0013] It is a further object of the present invention to provide novel methods of making internally-supported structures having an exposed diamond surface.
[0014] These and many other objects and advantages of the present invention will be readily apparent to one skilled in the art to which the invention pertains from a perusal of the claims, the appended drawings, and the following detailed description of the preferred embodiments.
DETAILED DESCRIPTI~N ~F THE DRAWINGS
[0015] Figure 1 is an illustration showing the steps of the preferred embodiment of the present invention.
DESCRIPTI~II~TT ~F PI~FEI~ED EMS~DIMENTS
[001] In one aspect, the present invention is directed to methods ofmaking free-standing, internally-supported, three-dimensional objects having a diamond layer on at least a portion of the outer surface of the object. The diamond layer may be formed by any method of synthesizing diamond such as high-pressure, high-temperature (IiPI-IT) methods or CAD. In accordance with the preferred embodiment of the present invention, the diamond is synthesized by CVD.
[0017] In the diamond CVD methods according to the present invention, a mixture of hydrogen and carbon-containing gases is activated to obtain a region of gas-phase non-equilibl-ium adjacent the substrate on which the diamond will be grown. The carbon-containing gas may be selected from a large variety of gases including methane, aliphatic and aromatic hydrocarbons, alcohols, ketones, amines, esters, carbon monoxide, carbon dioxide, and halogens. Methane is used according to the preferred embodiment of the invention.
[0018] The mixture of gases is energized to obtain a region of gas-phase non-equilibrium adjacent the substrate on which the diamond will be grown. A
variety of gas-phase activation techniques may be used and these techniques may be categorized as either hot-filament CVD, plasma-assisted CVD, or flame CVD. In plasma-assisted CVD
the plasma may be generated by a number of energy sources including microwave, radio-frequency, or direct current electric fields.
[0019] The substrate may be any material suitable for nucleating and growing diamond such as semiconductor, metal, and insulator materials. Generally, the nucleation rates are much higher on carbide forming substrates (e.g., Si, Mo, and ~ than on substrates that do not form carbides. According to the preferred embodiment of the present invention, silicon substrates are used in view of the desirable nucleation rates and well known fabrication techniques of silicon.
[0020] The surface of the substrate on which the diamond will be grown may be pretreated by ~rarious techniques to enhance diamond nucleation and improve the nucleation density of diamond on the surface. Such methods may include (i) scratching, abrading, or blasting the surface with diamond particles or paste, (ii) seeding the surface with submicron powders such as diamond, silicon, or c~llT, (iii) biasing the substrate, (iv) carburi~ation, (v) pulsed laser irradiation, and (vi) ion implantation.
[0021] In accordance with the preferred embodiment of the present invention, a free-standing, internally-supported, three-dimensional object is provided having an outer surface comprising a plurality of intersecting facets wherein at least a sub-set of the intersecting facets have a diamond layer of substantially uniform depth. The teen "facet"
as used herein, includes a surface or face that is either planar or non-planar.
[0022] Figure 1 illustrates the various steps of the preferred embodiment of the present invention. With reference to Figure 1, a silicon substrate 10 is fabricated using conventional fabrication techniques to form a mold having an exposed surface defining the sub-set of intersecting facets. A diamond layer 14 of generally uniform thickness is grown over the exposed surface 12 of the substrate 10 by any suitable method such as hot-filament CVD or plasma-assisted CVD.
[0023] The exposed surface 12 may be pretreated by any suitable technique to enhance the diamond nucleation and nucleation density on the exposed surface.
Typically, the exposed surface is pretreated by seeding the surface with carbon atoms 16.
The pretreatment of the exposed surface may be important in order to ensure growth of the diamond in the shape of the sub-set of facets which may be relatively complex.
[0024] In some instances, a backing layer 18 may be formed over at least portions of the exposed surface of the newly grown diamond layer to provide structural support to the diamond layer when the substrate is removed. Any material that will adhere to the exposed diamond and enhance the rigidity of the diamond layer 14 is suitable for the backing layer 1 ~ (e.g., epoxy, plastic, viscous polymers that harden, glass, etc.). The backing layer may be electrically conductive or non-conductive as desired.
[002] once the backing layer 1 ~ is formed as desired, the substrate 10 is removed to expose the surface 20 of the diamond layer 14 grown contiguous to the substrate which has been defined by the mold formed by the substrate. The substrate 10 may be removed by ally suitable means such as chemical etching. The diamond layer 14 may then be treated as desired.
[0026] The free-standing objects made according to the present invention may find utility in a variety of applications such as backward wave oscillators, bi-polar plates for fuel cells, traveling wave tubes, microchannel plates, and a multitude of other devices having a surface comprising a plurality of intersecting facets wherein a sub-set of intersecting facets have a diamond layer of substantially uniform thickness.
[0027] While preferred embodiments of the present invention have been described, it is to be understood that the embodiments described are illustrative only and that the scope of the invention is to be defined solely by the appended claims when accorded a full range of equivalence, many variations and modifications naturally occurring to those of skill in the art from a perusal hereof.

Claims (34)

1. A method of making a free-standing, internally-supported, three-dimensional object, the outer surface of the object comprising a plurality of intersecting facets, at least a sub-set of said intersecting facets having a diamond layer of substantially uniform depth, said method comprising the steps of:
(a) providing a mold having an exposed surface defining the sub-set of intersecting facets;
(b) growing a diamond layer of substantially uniform depth over the exposed surface;
(c) depositing a backing layer over at least a portion of the diamond layer;
and (d) removing the mold to expose the surface of the diamond layer grown immediately contiguous to the mold.
2. The method of Claim 1 wherein the mold is a silicon substrate fabricated to define the sub-set of intersecting facets.
3. The method of Claim 2 wherein the mold is removed by chemical etching.
4. The method of Claim 1 further including the step of pretreating the exposed surface of the mold to enhance the growth of the diamond layer.
5. The method of Claim 4 wherein carbon atoms are deposited on the exposed surface of the mold to enhance the growth of the diamond layer.
6. The method of Claim 5 wherein the carbon atoms are deposited on the exposed surface of the mold by exposing the surface to a carbon containing plasma.
7. The method of Claim 1 wherein the sub-set of intersecting facets includes planar facets.
8. The method of Claim 1 wherein the sub-set of intersecting facets includes non-planar facets.
9. A method of fabricating a free-standing object comprising a three-dimensional structure covered by a diamond film having an exposed surface, said method comprising the steps of:
growing a diamond film on a preselected exposed surface of a substrate;
providing a backing on at least a portion of the grown diamond film; and removing the substrate to expose the diamond surface defined by the preselected surface of the substrate on which the diamond was grown.
10. The method of Claim 9 wherein the substrate is silicon.
11. The method of Claim 9 including the further step of pretreating the preselected exposed surface to enhance the growth of diamond thereon.
12. The method of Claim 11 wherein a carbon seed layer is formed on the preselected exposed surface of the substrate.
13. The method of Claim 9 wherein the preselected surface of the substrate includes the intersection of two facets.
14. A method of fabricating a free-standing, internally-supported, three-dimensional object, the outer surface of the object comprising a plurality of intersecting facets, at least a sub-set of said intersecting facets having an exposed diamond surface, said method comprising the steps of:

growing a diamond film on a preselected exposed surface of a substrate;
providing a backing layer covering at least a portion of the grown diamond film;
and removing the substrate so that the exposed diamond surface is the surface grown immediately contiguous to the substrate.
15. The method of Claim 14 wherein the substrate is silicon.
16. The method of Claim 15 wherein the substrate is removed by chemical etching.
17. The method of Claim 14 wherein the backing layer covers the entire diamond film.
18. The method of Claim 14 wherein the backing layer is electrically conducting.
19. The method of Claim 14 wherein the backing layer is electrically non-conducting.
20. The method of Claim 19 wherein the backing layer is epoxy.
21. The method of Claim 14 including the further step of forming a carbon seed layer on the preselected exposed surface of the substrate to facilitate the growth of the diamond film thereon.
22. The method of Claim 21 wherein the diamond seed layer is formed by exposing the preselected exposed surface of the substrate to a carbon containing activated gas.
23. The method of Claim 22 wherein the diamond seed layer is formed by:
grounding the substrate;
providing ionized carbon atoms; and exposing the preselected exposed surface of the substrate to the ionized carbon atoms.
24. The method of Claim 22 wherein the activated gas is a plasma.
25. The method of Claim 24 wherein the plasma is formed by energizing a mixture of hydrogen and hydrocarbon gases.
26. The method of Claim 22 wherein the diamond seed layer is formed by chemical vapor deposition.
27. The method of Claim 14 wherein the diamond is grown by chemical vapor deposition.
28. The method of Claim 14 wherein the intersecting facets include planar facets.
29. The method of Claim 14 wherein the intersecting facets include non-planar facets.
30. The method of Claim 14 wherein the exposed diamond surface forms the surface of a waveguide.
31. The method of Claim 14 wherein the object is a bi-polar plate for a fuel cell.
32. A method of making a free-standing, internally-supported, three-dimensional object, the outer surface of the object comprising a plurality of intersecting facets, at least a sub-set of said intersecting facets having a diamond layer of substantially uniform depth, said method comprising the steps of:
(a) fabricating a silicon substrate to provide a molding surface defining the sub-set of intersecting facets;
(b) seeding the molding surface of the substrate with carbon;
(c) growing a diamond layer of substantially uniform depth over the molding surface of the substrate;
(d) forming an internally-supporting backing layer over the diamond layer; and (e) chemically etching the substrate to expose the surface of the diamond layer grown contiguous to the molding surface of the substrate.
33. The method of Claim 32 wherein molding surface is seeded by chemical vapor deposition.
34. The method of Claim 32 wherein the diamond layer is grown by chemical vapor deposition.
CA002515196A 2003-02-06 2004-02-06 Free-standing diamond structures and methods Abandoned CA2515196A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US44523703P 2003-02-06 2003-02-06
US60/445,237 2003-02-06
US49409503P 2003-08-12 2003-08-12
US49408903P 2003-08-12 2003-08-12
US60/494,089 2003-08-12
US60/494,095 2003-08-12
PCT/US2004/003518 WO2004072319A2 (en) 2003-02-06 2004-02-06 Free-standing diamond structures and methods

Publications (1)

Publication Number Publication Date
CA2515196A1 true CA2515196A1 (en) 2004-08-26

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CA002515196A Abandoned CA2515196A1 (en) 2003-02-06 2004-02-06 Free-standing diamond structures and methods

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EP (1) EP1601807A4 (en)
JP (1) JP2007524554A (en)
KR (1) KR100700339B1 (en)
AU (1) AU2004211648B2 (en)
CA (1) CA2515196A1 (en)
WO (1) WO2004072319A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201209424D0 (en) 2012-05-28 2012-07-11 Element Six Ltd Free-standing non-planar polycrystalline synthetic diamond components
KR101391179B1 (en) 2012-10-05 2014-05-08 한국과학기술연구원 Attenuated total reflection type waveguide mode resonance sensor using nanocrystalline diamond and method for manufacturing waveguide made of nanocrystalline diamond
JP6636239B2 (en) * 2014-08-29 2020-01-29 国立大学法人電気通信大学 Method for producing single crystal diamond, single crystal diamond, method for producing single crystal diamond substrate, single crystal diamond substrate and semiconductor device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5514885A (en) * 1986-10-09 1996-05-07 Myrick; James J. SOI methods and apparatus
JP3549227B2 (en) * 1993-05-14 2004-08-04 株式会社神戸製鋼所 Highly oriented diamond thin film
JPH11209194A (en) * 1998-01-23 1999-08-03 Sumitomo Electric Ind Ltd Composition hard film, forming method of the film and wear resistant part
US6659161B1 (en) * 2000-10-13 2003-12-09 Chien-Min Sung Molding process for making diamond tools

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EP1601807A4 (en) 2008-01-23
KR20060010718A (en) 2006-02-02
EP1601807A2 (en) 2005-12-07
KR100700339B1 (en) 2007-03-29
AU2004211648A1 (en) 2004-08-26
WO2004072319A2 (en) 2004-08-26
JP2007524554A (en) 2007-08-30
WO2004072319A3 (en) 2006-08-17
AU2004211648B2 (en) 2008-10-02

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