WO2004059604A3 - Method and system for fabricating an oled - Google Patents

Method and system for fabricating an oled Download PDF

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Publication number
WO2004059604A3
WO2004059604A3 PCT/US2003/040270 US0340270W WO2004059604A3 WO 2004059604 A3 WO2004059604 A3 WO 2004059604A3 US 0340270 W US0340270 W US 0340270W WO 2004059604 A3 WO2004059604 A3 WO 2004059604A3
Authority
WO
WIPO (PCT)
Prior art keywords
pulsed laser
vacuum chamber
sample
laser source
depositing
Prior art date
Application number
PCT/US2003/040270
Other languages
French (fr)
Other versions
WO2004059604A2 (en
Inventor
John N Magno
Ilyas Khayrullin
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Priority to AU2003301015A priority Critical patent/AU2003301015A1/en
Publication of WO2004059604A2 publication Critical patent/WO2004059604A2/en
Publication of WO2004059604A3 publication Critical patent/WO2004059604A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/162—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using laser ablation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/351—Metal complexes comprising lanthanides or actinides, e.g. comprising europium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A method and system for fabricating a layer of an organic light emitting device using pulsed laser deposition is provided. A pulsed laser source is used in the method for depositing an organic or coordination complex solid sample on a substrate. A plurality of coherent light wavelengths tuned at different frequencies from the laser and directed through an optical inlet of a vacuum chamber strike a sample to form a volatized sample for depositing on a substrate. Pulsed laser sources used in the method and system include YAG, excimer, alexandrite, or combinations thereof. The system includes a pulsed laser source, a vacuum chamber, and an optical inlet for receiving at least two coherent light wavelengths tuned at different frequencies from a pulsed laser source. Alternative methods of deposition may also be performed within the same vacuum chamber.
PCT/US2003/040270 2002-12-17 2003-12-17 Method and system for fabricating an oled WO2004059604A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003301015A AU2003301015A1 (en) 2002-12-17 2003-12-17 Method and system for fabricating an oled

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US43401202P 2002-12-17 2002-12-17
US60/434,012 2002-12-17
US44203703P 2003-01-23 2003-01-23
US60/442,037 2003-01-23
US44223003P 2003-01-24 2003-01-24
US62/442,230 2003-01-24

Publications (2)

Publication Number Publication Date
WO2004059604A2 WO2004059604A2 (en) 2004-07-15
WO2004059604A3 true WO2004059604A3 (en) 2004-11-04

Family

ID=32686069

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/040270 WO2004059604A2 (en) 2002-12-17 2003-12-17 Method and system for fabricating an oled

Country Status (2)

Country Link
AU (1) AU2003301015A1 (en)
WO (1) WO2004059604A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9397308B2 (en) 2006-12-04 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6355393B1 (en) * 1999-03-10 2002-03-12 Fuji Photo Film Co., Ltd. Image-forming method and organic light-emitting element for a light source for exposure used therein
US6582875B1 (en) * 2002-01-23 2003-06-24 Eastman Kodak Company Using a multichannel linear laser light beam in making OLED devices by thermal transfer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6355393B1 (en) * 1999-03-10 2002-03-12 Fuji Photo Film Co., Ltd. Image-forming method and organic light-emitting element for a light source for exposure used therein
US6582875B1 (en) * 2002-01-23 2003-06-24 Eastman Kodak Company Using a multichannel linear laser light beam in making OLED devices by thermal transfer

Also Published As

Publication number Publication date
WO2004059604A2 (en) 2004-07-15
AU2003301015A1 (en) 2004-07-22
AU2003301015A8 (en) 2004-07-22

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