WO2004055232A3 - Procedes de synthese et de croissance de nanotiges d’un carbure metallique sur un substrat, substrats ainsi obtenus et leurs applications - Google Patents

Procedes de synthese et de croissance de nanotiges d’un carbure metallique sur un substrat, substrats ainsi obtenus et leurs applications Download PDF

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Publication number
WO2004055232A3
WO2004055232A3 PCT/FR2003/050154 FR0350154W WO2004055232A3 WO 2004055232 A3 WO2004055232 A3 WO 2004055232A3 FR 0350154 W FR0350154 W FR 0350154W WO 2004055232 A3 WO2004055232 A3 WO 2004055232A3
Authority
WO
WIPO (PCT)
Prior art keywords
metal
substrate
synthesising
substrates
applications
Prior art date
Application number
PCT/FR2003/050154
Other languages
English (en)
Other versions
WO2004055232A2 (fr
Inventor
Marc Delaunay
Francoise Vinet
Original Assignee
Commissariat Energie Atomique
Marc Delaunay
Francoise Vinet
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Marc Delaunay, Francoise Vinet filed Critical Commissariat Energie Atomique
Priority to US10/532,500 priority Critical patent/US7338554B2/en
Priority to EP03799710A priority patent/EP1570101A2/fr
Priority to JP2004559844A priority patent/JP2006508888A/ja
Publication of WO2004055232A2 publication Critical patent/WO2004055232A2/fr
Publication of WO2004055232A3 publication Critical patent/WO2004055232A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C01P2004/13—Nanotubes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Nanotechnology (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention se rapporte à un procédé permettant de synthétiser des nanotiges d'un carbure d'un métal Ml sur un substrat, qui comprend a) le dépôt, sur le substrat, d'une couche de nanocristaux d'oxyde du métal Ml et de nanocristaux d'oxyde d'au moins un métal M2 différent du métal Ml, les nanocristaux d'oxyde du métal Ml étant dispersés dans cette couche ; b) la réduction des nanocristaux d'oxyde des métaux Ml et M2 en nanocristaux des métaux correspondants ; et c) la croissance sélective des nanocristaux 15 du métal Ml. L'invention se rapporte également à un procédé permettant de faire croître des nanotiges d'un carbure d'un métal Ml sur un substrat à partir de nanocristaux de ce métal, aux substrats ainsi obtenus et à leurs applications : fabrication de microsystèmes dotés de fonctionnalités chimiques ou biologiques, et en particulier de biocapteurs ; de sources émettrices d'électrons, par exemple pour des écrans plats de téléviseurs ou d'ordinateurs ; ...
PCT/FR2003/050154 2002-12-09 2003-12-04 Procedes de synthese et de croissance de nanotiges d’un carbure metallique sur un substrat, substrats ainsi obtenus et leurs applications WO2004055232A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/532,500 US7338554B2 (en) 2002-12-09 2003-12-04 Method of synthesising and growing nanorods from a metal carbide on a substrate, substrates thus obtained and applications thereof
EP03799710A EP1570101A2 (fr) 2002-12-09 2003-12-04 Procedes de synthese et de croissance de nanotiges d'un carbure metallique sur un substrat, substrats ainsi obtenus et leurs applications
JP2004559844A JP2006508888A (ja) 2002-12-09 2003-12-04 基板上での金属炭化物由来ナノロッドの合成／成長方法、それによって得られる基板およびその用途

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0215530A FR2848204B1 (fr) 2002-12-09 2002-12-09 Procedes de synthese et de croissance de nanotiges d'un carbure metallique sur un substrat, substrats ainsi obtenus et leurs applications
FR02/15530 2002-12-09

Publications (2)

Publication Number Publication Date
WO2004055232A2 WO2004055232A2 (fr) 2004-07-01
WO2004055232A3 true WO2004055232A3 (fr) 2004-09-10

Family

ID=32320105

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2003/050154 WO2004055232A2 (fr) 2002-12-09 2003-12-04 Procedes de synthese et de croissance de nanotiges d’un carbure metallique sur un substrat, substrats ainsi obtenus et leurs applications

Country Status (5)

Country Link
US (1) US7338554B2 (fr)
EP (1) EP1570101A2 (fr)
JP (1) JP2006508888A (fr)
FR (1) FR2848204B1 (fr)
WO (1) WO2004055232A2 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050112048A1 (en) * 2003-11-25 2005-05-26 Loucas Tsakalakos Elongated nano-structures and related devices
US7591897B2 (en) * 2005-03-22 2009-09-22 University Of Louisville Research Foundation, Inc. Method for the rapid synthesis of large quantities of metal oxide nanowires at low temperatures
US8354291B2 (en) 2008-11-24 2013-01-15 University Of Southern California Integrated circuits based on aligned nanotubes
KR101501609B1 (ko) * 2009-03-16 2015-03-11 삼성전자주식회사 핵산을 이용한 촉매 금속층의 코팅방법 및 나노 탄소의 형성방법
US20110101302A1 (en) * 2009-11-05 2011-05-05 University Of Southern California Wafer-scale fabrication of separated carbon nanotube thin-film transistors
US8692230B2 (en) 2011-03-29 2014-04-08 University Of Southern California High performance field-effect transistors
US8860137B2 (en) 2011-06-08 2014-10-14 University Of Southern California Radio frequency devices based on carbon nanomaterials
US11724310B2 (en) * 2011-06-17 2023-08-15 Consolidated Nuclear Security, LLC Titanium-group nano-whiskers and method of production
US8951892B2 (en) 2012-06-29 2015-02-10 Freescale Semiconductor, Inc. Applications for nanopillar structures
US9379327B1 (en) 2014-12-16 2016-06-28 Carbonics Inc. Photolithography based fabrication of 3D structures

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1129990A1 (fr) * 2000-02-25 2001-09-05 Lucent Technologies Inc. Procédé de croissance contrôlée de nanotubes de carbone
US6346303B1 (en) * 1999-01-11 2002-02-12 Han-Chang Shih Process for synthesizing one-dimensional nanosubstances by electron cyclotron resonance chemical vapor deposition

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0472666A4 (en) * 1989-05-19 1995-03-29 Kennametal Inc Cvd grown transition metal carbide and nitride whiskers
FR2774251B1 (fr) 1998-01-26 2000-02-25 Commissariat Energie Atomique Source a plasma micro-onde lineaire en aimants permanents
US6514897B1 (en) * 1999-01-12 2003-02-04 Hyperion Catalysis International, Inc. Carbide and oxycarbide based compositions, rigid porous structures including the same, methods of making and using the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346303B1 (en) * 1999-01-11 2002-02-12 Han-Chang Shih Process for synthesizing one-dimensional nanosubstances by electron cyclotron resonance chemical vapor deposition
EP1129990A1 (fr) * 2000-02-25 2001-09-05 Lucent Technologies Inc. Procédé de croissance contrôlée de nanotubes de carbone

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
CHEN X H ET AL: "The formation conditions of carbon nanotubes array based on FeNi alloy island films", THIN SOLID FILMS, 8 FEB. 1999, ELSEVIER, SWITZERLAND, vol. 339, no. 1-2, pages 6 - 9, XP002255587, ISSN: 0040-6090 *
LIN P. H. ET AL: "Low temperature growth of aligned carbon nanotubes in large area", INTERNATIONAL JOURNAL OF MODERN PHYSICS B, vol. 16, no. 6-7, 2002, pages 853 - 859, XP009017872 *
YOUNG CHUL CHOI ET AL: "Low temperature synthesis of carbon nanotubes by microwave plasma-enhanced chemical vapor deposition", SYNTHETIC METALS, vol. 108, 2000, pages 159 - 163, XP000957661 *
YOUNG JOON YOON ET AL: "Growth control of single and multi-walled carbon nanotubes by thin film catalyst", CHEMICAL PHYSICS LETTERS, 25 NOV. 2002, ELSEVIER, NETHERLANDS, vol. 366, no. 1-2, pages 109 - 114, XP002255586, ISSN: 0009-2614 *

Also Published As

Publication number Publication date
FR2848204B1 (fr) 2007-01-26
EP1570101A2 (fr) 2005-09-07
US7338554B2 (en) 2008-03-04
JP2006508888A (ja) 2006-03-16
WO2004055232A2 (fr) 2004-07-01
US20050271815A1 (en) 2005-12-08
FR2848204A1 (fr) 2004-06-11

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