WO2004040034A3 - Method of preparing a solution and application of this solution to prepare functional oxide layers - Google Patents

Method of preparing a solution and application of this solution to prepare functional oxide layers Download PDF

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Publication number
WO2004040034A3
WO2004040034A3 PCT/IB2003/004434 IB0304434W WO2004040034A3 WO 2004040034 A3 WO2004040034 A3 WO 2004040034A3 IB 0304434 W IB0304434 W IB 0304434W WO 2004040034 A3 WO2004040034 A3 WO 2004040034A3
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WO
WIPO (PCT)
Prior art keywords
solution
preparing
application
oxide layers
prepare functional
Prior art date
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PCT/IB2003/004434
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French (fr)
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WO2004040034A2 (en
Inventor
Wilhelmus C Keur
Hal Henricus A M Van
Danielle Beelen
Mareike K Klee
Joerg Meyer
Hans-Wolfgang Brand
Gerrit J W Huiskamp
Original Assignee
Koninkl Philips Electronics Nv
Philips Intellectual Property
Wilhelmus C Keur
Hal Henricus A M Van
Danielle Beelen
Mareike K Klee
Joerg Meyer
Hans-Wolfgang Brand
Gerrit J W Huiskamp
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Application filed by Koninkl Philips Electronics Nv, Philips Intellectual Property, Wilhelmus C Keur, Hal Henricus A M Van, Danielle Beelen, Mareike K Klee, Joerg Meyer, Hans-Wolfgang Brand, Gerrit J W Huiskamp filed Critical Koninkl Philips Electronics Nv
Priority to AU2003264795A priority Critical patent/AU2003264795A1/en
Publication of WO2004040034A2 publication Critical patent/WO2004040034A2/en
Publication of WO2004040034A3 publication Critical patent/WO2004040034A3/en

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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Abstract

In the method of preparation of the Pb-Zr-Ti-containing solutions the lead is added to the Zr- and Ti-containing solution in powdery form. This has the advantage that it takes less time, and that nevertheless a stable solution is obtained. Preferably use is made of Zr- and Ti-butoxides and of lead acetate tri-hydrate. A very suitable solvent is 1-methoxy-2-propanol. The solution can be used for the manufacture of layers on a substrate with a high dielectric constant.
PCT/IB2003/004434 2002-10-31 2003-10-06 Method of preparing a solution and application of this solution to prepare functional oxide layers WO2004040034A2 (en)

Priority Applications (1)

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Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP02079563.9 2002-10-31
EP02079563 2002-10-31
EP03100744.6 2003-03-24
EP03100744 2003-03-24

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WO2004040034A2 WO2004040034A2 (en) 2004-05-13
WO2004040034A3 true WO2004040034A3 (en) 2004-11-04

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Citations (4)

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Publication number Priority date Publication date Assignee Title
EP0676384A2 (en) * 1994-03-22 1995-10-11 Philips Patentverwaltung GmbH Perovskite containing composite material, process for its preparation, electronic component and module
JPH10226519A (en) * 1997-02-07 1998-08-25 Nec Corp Production of thin oxide film by coating method
US5840615A (en) * 1993-04-16 1998-11-24 Texas Instruments Incorporated Method for forming a ferroelectric material film by the sol-gel method, along with a process for a production of a capacitor and its raw material solution
US20020035961A1 (en) * 2000-06-21 2002-03-28 Seiko Epson Corporation Ceramic film and method of manufacturing the same, semiconductor device and piezoelectric device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5840615A (en) * 1993-04-16 1998-11-24 Texas Instruments Incorporated Method for forming a ferroelectric material film by the sol-gel method, along with a process for a production of a capacitor and its raw material solution
EP0676384A2 (en) * 1994-03-22 1995-10-11 Philips Patentverwaltung GmbH Perovskite containing composite material, process for its preparation, electronic component and module
JPH10226519A (en) * 1997-02-07 1998-08-25 Nec Corp Production of thin oxide film by coating method
US20020035961A1 (en) * 2000-06-21 2002-03-28 Seiko Epson Corporation Ceramic film and method of manufacturing the same, semiconductor device and piezoelectric device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
KOSEC M ET AL: "Chemical solution deposition of PZT thin films for microelectronics", MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, ELSEVIER SCIENCE PUBLISHERS B.V., BARKING, UK, vol. 5, no. 2-3, April 2002 (2002-04-01), pages 97 - 103, XP004412110, ISSN: 1369-8001 *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 13 30 November 1998 (1998-11-30) *
WRIGHT J S ET AL: "EFFECT OF SOLUTION PRECESSING ON PZT THIN FILMS PREPARED BY A HYBRID MOD SOLUTION DEPOSITION ROUTE", JOURNAL OF ELECTROCERAMICS, KLUWER ACADEMIC PUBLISHERS, BOSTON, MA, US, vol. 3, no. 3, July 1999 (1999-07-01), pages 261 - 268, XP000925623, ISSN: 1385-3449 *

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WO2004040034A2 (en) 2004-05-13

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