WO2004034421A3 - Procede de depot de films de nanoparticules a l'aide de champ electrique - Google Patents

Procede de depot de films de nanoparticules a l'aide de champ electrique Download PDF

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Publication number
WO2004034421A3
WO2004034421A3 PCT/US2002/014593 US0214593W WO2004034421A3 WO 2004034421 A3 WO2004034421 A3 WO 2004034421A3 US 0214593 W US0214593 W US 0214593W WO 2004034421 A3 WO2004034421 A3 WO 2004034421A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrodes
pair
nanoparticles
film deposition
films
Prior art date
Application number
PCT/US2002/014593
Other languages
English (en)
Other versions
WO2004034421A2 (fr
Inventor
Irving P Herman
Mohammad A Islam
Original Assignee
Univ Columbia
Irving P Herman
Mohammad A Islam
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Columbia, Irving P Herman, Mohammad A Islam filed Critical Univ Columbia
Priority to PCT/US2002/014593 priority Critical patent/WO2004034421A2/fr
Priority to JP2004542971A priority patent/JP4130655B2/ja
Publication of WO2004034421A2 publication Critical patent/WO2004034421A2/fr
Publication of WO2004034421A3 publication Critical patent/WO2004034421A3/fr
Priority to US10/974,406 priority patent/US7510638B2/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
    • C25D15/02—Combined electrolytic and electrophoretic processes with charged materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/02—Particle morphology depicted by an image obtained by optical microscopy
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Compounds Of Iron (AREA)

Abstract

L'invention concerne un procédé de dépôt de films, structurés ou à structure sélective, de films de nanoparticules d'épaisseur régulée sur la surface de déposition de film respective de chacune d'une paire d'électrodes. Dans ce procédé, une paire d'électrodes, chacune comportant une surface conductrice de dépôt de film, est immergée dans un solvant non polaire, non conducteur, dans lequel sont suspendues des nanoparticules, chaque nanoparticule comportant des ligands qui lui sont attachés. On applique une tension à la paire d'électrodes ce qui provoque le dépôt de films de nanoparticules sur la surface de dépôt respective de film de chacune des électrodes. Les films nanoparticulaires formés à l'aide de ce procédé peuvent être non structurés ou peuvent être structurés par mise en forme de la surface de dépôt de film d'au moins une électrode de la paire. Les films nanoparticulaires formés selon le procédé de la présente invention sont utiles en tant que couches dans des dispositifs électroniques.
PCT/US2002/014593 2002-05-10 2002-05-10 Procede de depot de films de nanoparticules a l'aide de champ electrique WO2004034421A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/US2002/014593 WO2004034421A2 (fr) 2002-05-10 2002-05-10 Procede de depot de films de nanoparticules a l'aide de champ electrique
JP2004542971A JP4130655B2 (ja) 2002-05-10 2002-05-10 ナノ粒子の膜の電場補助的な堆積方法
US10/974,406 US7510638B2 (en) 2002-05-10 2004-10-27 Method of electric field assisted deposition of films of nanoparticles

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/014593 WO2004034421A2 (fr) 2002-05-10 2002-05-10 Procede de depot de films de nanoparticules a l'aide de champ electrique

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/974,406 Continuation US7510638B2 (en) 2002-05-10 2004-10-27 Method of electric field assisted deposition of films of nanoparticles

Publications (2)

Publication Number Publication Date
WO2004034421A2 WO2004034421A2 (fr) 2004-04-22
WO2004034421A3 true WO2004034421A3 (fr) 2004-07-01

Family

ID=32092075

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/014593 WO2004034421A2 (fr) 2002-05-10 2002-05-10 Procede de depot de films de nanoparticules a l'aide de champ electrique

Country Status (2)

Country Link
JP (1) JP4130655B2 (fr)
WO (1) WO2004034421A2 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8174667B2 (en) 2006-10-12 2012-05-08 Cambrios Technologies Corporation Nanowire-based transparent conductors and applications thereof
US8618531B2 (en) 2005-08-12 2013-12-31 Cambrios Technologies Corporation Transparent conductors comprising metal nanowires
US9534124B2 (en) 2010-02-05 2017-01-03 Cam Holding Corporation Photosensitive ink compositions and transparent conductors and method of using the same

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7212284B2 (en) * 2004-05-12 2007-05-01 General Electric Company Method for forming nanoparticle films and application thereof
KR100632632B1 (ko) * 2004-05-28 2006-10-12 삼성전자주식회사 나노 결정의 다층 박막 제조 방법 및 이를 이용한유·무기 하이브리드 전기 발광 소자
EP2082436B1 (fr) 2006-10-12 2019-08-28 Cambrios Film Solutions Corporation Conducteurs transparents à base de nanofils et procédé de leur fabrication
US20090321364A1 (en) 2007-04-20 2009-12-31 Cambrios Technologies Corporation Systems and methods for filtering nanowires
EP2103719A1 (fr) * 2008-03-18 2009-09-23 Technical University of Denmark Procédé de production d'une structure multicouche
JP5299903B2 (ja) * 2009-01-23 2013-09-25 Ｊｓｒ株式会社 ケイ素粒子層の形成方法およびシリコン膜の形成方法
EP2867018B1 (fr) 2012-06-29 2019-05-01 Northeastern University Nanostructures tridimensionnelles hybrides fabriquées par assemblage de nanoéléments dirigé par champ électrique
CN104471679B (zh) 2012-07-20 2020-11-03 旭化成株式会社 半导体膜和半导体元件
US9399826B2 (en) * 2014-05-15 2016-07-26 Samsung Electronics Co., Ltd. Thin film deposition apparatus and thin film deposition method using electric field
CN110294965A (zh) * 2018-03-21 2019-10-01 Tcl集团股份有限公司 墨水及其制备方法
CN110294969A (zh) * 2018-03-21 2019-10-01 Tcl集团股份有限公司 墨水及其制备方法
CN110981878A (zh) * 2019-11-28 2020-04-10 Tcl华星光电技术有限公司 酞菁纳米球及其制备方法、以及彩色滤光片
CN113745442A (zh) * 2021-08-23 2021-12-03 深圳市华星光电半导体显示技术有限公司 纳米粒子薄膜的制备方法、纳米粒子薄膜及显示面板
CN114197015B (zh) * 2021-12-10 2023-06-27 深圳市华星光电半导体显示技术有限公司 纳米粒子膜、纳米粒子膜的制造方法以及显示面板
WO2023209954A1 (fr) * 2022-04-28 2023-11-02 シャープディスプレイテクノロジー株式会社 Élément d'émission de lumière, dispositif d'affichage et procédé de fabrication de dispositif d'affichage

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060026A (en) * 1997-07-31 2000-05-09 Starfire Electronic Development & Mktg., Ltd. Photoelectrochemical device containing a quantum confined silicon particle
US20030089611A1 (en) * 2001-11-15 2003-05-15 The Board Of Trustts Of The University Of Illinois Elemental silicon nanoparticle plating and method for the same
US6582673B1 (en) * 2000-03-17 2003-06-24 University Of Central Florida Carbon nanotube with a graphitic outer layer: process and application

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060026A (en) * 1997-07-31 2000-05-09 Starfire Electronic Development & Mktg., Ltd. Photoelectrochemical device containing a quantum confined silicon particle
US6582673B1 (en) * 2000-03-17 2003-06-24 University Of Central Florida Carbon nanotube with a graphitic outer layer: process and application
US20030089611A1 (en) * 2001-11-15 2003-05-15 The Board Of Trustts Of The University Of Illinois Elemental silicon nanoparticle plating and method for the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8618531B2 (en) 2005-08-12 2013-12-31 Cambrios Technologies Corporation Transparent conductors comprising metal nanowires
US8174667B2 (en) 2006-10-12 2012-05-08 Cambrios Technologies Corporation Nanowire-based transparent conductors and applications thereof
US9534124B2 (en) 2010-02-05 2017-01-03 Cam Holding Corporation Photosensitive ink compositions and transparent conductors and method of using the same

Also Published As

Publication number Publication date
JP4130655B2 (ja) 2008-08-06
WO2004034421A2 (fr) 2004-04-22
JP2006501370A (ja) 2006-01-12

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