WO2004033743A3 - Homogenous solid solution alloys for sputter-deposited thin films - Google Patents

Homogenous solid solution alloys for sputter-deposited thin films Download PDF

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Publication number
WO2004033743A3
WO2004033743A3 PCT/US2003/030731 US0330731W WO2004033743A3 WO 2004033743 A3 WO2004033743 A3 WO 2004033743A3 US 0330731 W US0330731 W US 0330731W WO 2004033743 A3 WO2004033743 A3 WO 2004033743A3
Authority
WO
WIPO (PCT)
Prior art keywords
solid solution
sputter
thin films
deposited thin
homogenous solid
Prior art date
Application number
PCT/US2003/030731
Other languages
French (fr)
Other versions
WO2004033743A2 (en
WO2004033743B1 (en
Inventor
Michael E Thomas
Eal H Lee
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Priority to EP03808097A priority Critical patent/EP1558791A2/en
Priority to AU2003277063A priority patent/AU2003277063A1/en
Priority to JP2005501068A priority patent/JP2006524290A/en
Publication of WO2004033743A2 publication Critical patent/WO2004033743A2/en
Publication of WO2004033743A3 publication Critical patent/WO2004033743A3/en
Publication of WO2004033743B1 publication Critical patent/WO2004033743B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
    • C25C1/06—Electrolytic production, recovery or refining of metals by electrolysis of solutions or iron group metals, refractory metals or manganese
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
    • C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
    • C25C1/22—Electrolytic production, recovery or refining of metals by electrolysis of solutions of metals not provided for in groups C25C1/02 - C25C1/20

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

The invention includes a sputtering component comprising a sputtering surface. At least 99 atomic % of the sputtering surface consists of a single phase corresponding to a solid solution of two or more elements in elemental form. Additionally, an entire volume of the sputtering component can consist of the single phase corresponding to the solid solution of the two or more elements in elemental form. The invention encompasses methods of forming mixed­metal materials utilizing one or more of a reduction process, electrolysis process and iodide process.
PCT/US2003/030731 2002-10-08 2003-09-26 Homogenous solid solution alloys for sputter-deposited thin films WO2004033743A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03808097A EP1558791A2 (en) 2002-10-08 2003-09-26 Homogenous solid solution alloys for sputter-deposited thin films
AU2003277063A AU2003277063A1 (en) 2002-10-08 2003-09-26 Homogenous solid solution alloys for sputter-deposited thin films
JP2005501068A JP2006524290A (en) 2002-10-08 2003-09-26 Homogeneous solid solution alloys for sputter deposited thin films

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US41736702P 2002-10-08 2002-10-08
US60/417,367 2002-10-08
US10798303A 2003-09-23 2003-09-23
USP-107,983 2003-09-23

Publications (3)

Publication Number Publication Date
WO2004033743A2 WO2004033743A2 (en) 2004-04-22
WO2004033743A3 true WO2004033743A3 (en) 2004-11-11
WO2004033743B1 WO2004033743B1 (en) 2004-12-23

Family

ID=32095575

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/030731 WO2004033743A2 (en) 2002-10-08 2003-09-26 Homogenous solid solution alloys for sputter-deposited thin films

Country Status (4)

Country Link
EP (1) EP1558791A2 (en)
KR (1) KR20050053742A (en)
AU (1) AU2003277063A1 (en)
WO (1) WO2004033743A2 (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4189358A (en) * 1978-07-14 1980-02-19 The International Nickel Company, Inc. Electrodeposition of ruthenium-iridium alloy
JPS6314864A (en) * 1986-07-08 1988-01-22 Ulvac Corp Co alloy sputtering target and its production
WO2000013235A1 (en) * 1998-08-28 2000-03-09 Advanced Technology Materials, Inc. Ternary nitride-carbide barrier layers
US6063254A (en) * 1997-04-30 2000-05-16 The Alta Group, Inc. Method for producing titanium crystal and titanium
US6176944B1 (en) * 1999-11-01 2001-01-23 Praxair S.T. Technology, Inc. Method of making low magnetic permeability cobalt sputter targets
US20040011432A1 (en) * 2002-07-17 2004-01-22 Podlaha Elizabeth J. Metal alloy electrodeposited microstructures
US20040025986A1 (en) * 2002-08-08 2004-02-12 Perry Andrew C. Controlled-grain-precious metal sputter targets

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4189358A (en) * 1978-07-14 1980-02-19 The International Nickel Company, Inc. Electrodeposition of ruthenium-iridium alloy
JPS6314864A (en) * 1986-07-08 1988-01-22 Ulvac Corp Co alloy sputtering target and its production
US6063254A (en) * 1997-04-30 2000-05-16 The Alta Group, Inc. Method for producing titanium crystal and titanium
WO2000013235A1 (en) * 1998-08-28 2000-03-09 Advanced Technology Materials, Inc. Ternary nitride-carbide barrier layers
US6176944B1 (en) * 1999-11-01 2001-01-23 Praxair S.T. Technology, Inc. Method of making low magnetic permeability cobalt sputter targets
US20040011432A1 (en) * 2002-07-17 2004-01-22 Podlaha Elizabeth J. Metal alloy electrodeposited microstructures
US20040025986A1 (en) * 2002-08-08 2004-02-12 Perry Andrew C. Controlled-grain-precious metal sputter targets

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
National research corporation data sheet, SGS tantalum, pg: 1-7 *

Also Published As

Publication number Publication date
AU2003277063A8 (en) 2004-05-04
WO2004033743A2 (en) 2004-04-22
EP1558791A2 (en) 2005-08-03
AU2003277063A1 (en) 2004-05-04
KR20050053742A (en) 2005-06-08
WO2004033743B1 (en) 2004-12-23

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