WO2004033365A3 - Method of forming a sensor for detecting motion - Google Patents

Method of forming a sensor for detecting motion Download PDF

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Publication number
WO2004033365A3
WO2004033365A3 PCT/US2003/030592 US0330592W WO2004033365A3 WO 2004033365 A3 WO2004033365 A3 WO 2004033365A3 US 0330592 W US0330592 W US 0330592W WO 2004033365 A3 WO2004033365 A3 WO 2004033365A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
sensor
forming
detecting motion
substrate
Prior art date
Application number
PCT/US2003/030592
Other languages
French (fr)
Other versions
WO2004033365A2 (en
Inventor
Bishnu Gogoi
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Priority to AU2003273368A priority Critical patent/AU2003273368A1/en
Publication of WO2004033365A2 publication Critical patent/WO2004033365A2/en
Publication of WO2004033365A3 publication Critical patent/WO2004033365A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00142—Bridges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Gyroscopes (AREA)

Abstract

A method of forming a sensor for detecting motion is disclosed. The method includes a first step (110) of providing a silicon-on-insulator (SOI) substrate (200) containing a device layer (210), an insulator layer (220), and a handle layer (230). The device layer may be patterned to form a device structure (310). A support substrate (410) is also provided and patterned, and an electrically conductive layer (510) is formed over the support substrate. The SOI substrate and the support substrate are bonded together, and the handle layer and the insulator layer are removed from the SOI substrate, thus releasing the device structure.
PCT/US2003/030592 2002-10-07 2003-09-23 Method of forming a sensor for detecting motion WO2004033365A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003273368A AU2003273368A1 (en) 2002-10-07 2003-09-23 Method of forming a sensor for detecting motion

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/267,082 US20040065638A1 (en) 2002-10-07 2002-10-07 Method of forming a sensor for detecting motion
US10/267,082 2002-10-07

Publications (2)

Publication Number Publication Date
WO2004033365A2 WO2004033365A2 (en) 2004-04-22
WO2004033365A3 true WO2004033365A3 (en) 2004-08-26

Family

ID=32042788

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/030592 WO2004033365A2 (en) 2002-10-07 2003-09-23 Method of forming a sensor for detecting motion

Country Status (3)

Country Link
US (1) US20040065638A1 (en)
AU (1) AU2003273368A1 (en)
WO (1) WO2004033365A2 (en)

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US7381630B2 (en) 2001-01-02 2008-06-03 The Charles Stark Draper Laboratory, Inc. Method for integrating MEMS device and interposer
US7406761B2 (en) * 2005-03-21 2008-08-05 Honeywell International Inc. Method of manufacturing vibrating micromechanical structures
US7407826B2 (en) * 2005-03-21 2008-08-05 Honeywell International Inc. Vacuum packaged single crystal silicon device
US7562573B2 (en) * 2005-07-21 2009-07-21 Evigia Systems, Inc. Integrated sensor and circuitry and process therefor
EP1953814B1 (en) * 2005-11-25 2017-09-06 Panasonic Intellectual Property Management Co., Ltd. Wafer level package structure and method for manufacturing same
US8026594B2 (en) * 2005-11-25 2011-09-27 Panasonic Electric Works Co., Ltd. Sensor device and production method therefor
WO2007061062A1 (en) * 2005-11-25 2007-05-31 Matsushita Electric Works, Ltd. Method for manufacturing wafer level package structure
WO2007127107A2 (en) * 2006-04-21 2007-11-08 Bioscale, Inc. Microfabricated devices and method for fabricating microfabricated devices
US20080032501A1 (en) * 2006-07-21 2008-02-07 Honeywell International Inc. Silicon on metal for mems devices
US7999440B2 (en) * 2006-11-27 2011-08-16 Bioscale, Inc. Micro-fabricated devices having a suspended membrane or plate structure
US20080121042A1 (en) * 2006-11-27 2008-05-29 Bioscale, Inc. Fluid paths in etchable materials
US20080125700A1 (en) * 2006-11-29 2008-05-29 Moberg Sheldon B Methods and apparatuses for detecting medical device acceleration, temperature, and humidity conditions
KR101001666B1 (en) * 2008-07-08 2010-12-15 광주과학기술원 The method for fabricating micro vertical structure
DE102009029201B4 (en) * 2009-09-04 2019-05-09 Robert Bosch Gmbh Method for producing a component comprising a microstructured or nanostructured component
US8569092B2 (en) * 2009-12-28 2013-10-29 General Electric Company Method for fabricating a microelectromechanical sensor with a piezoresistive type readout
CN102134053B (en) * 2010-01-21 2013-04-03 深迪半导体(上海)有限公司 Manufacturing method of biaxial MEMS (micro-electro-mechanical system) gyroscope
FR2972263B1 (en) * 2011-03-03 2013-09-27 Tronics Microsystems INERTIAL SENSOR AND METHOD FOR MANUFACTURING THE SAME
CN102344113B (en) * 2011-09-08 2014-03-12 上海先进半导体制造股份有限公司 Method for etching device deep slot with metal sensitive interlayer
US9010200B2 (en) 2012-08-06 2015-04-21 Amphenol Thermometrics, Inc. Device for measuring forces and method of making the same
DE102017215236A1 (en) * 2017-08-31 2019-02-28 Siemens Aktiengesellschaft MEMS switch and method of manufacturing a MEMS switch

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EP1058143A2 (en) * 1999-05-28 2000-12-06 Mitsubishi Denki Kabushiki Kaisha A micro-mirror device and a method for producing a micro-mirror device
US6277666B1 (en) * 1999-06-24 2001-08-21 Honeywell Inc. Precisely defined microelectromechanical structures and associated fabrication methods
US6296779B1 (en) * 1996-05-31 2001-10-02 The Regents Of The University Of California Method of fabricating a sensor
US20020081821A1 (en) * 2000-12-27 2002-06-27 Cleopatra Cabuz SOI/glass process for forming thin silicon micromachined structures
WO2002054475A1 (en) * 2001-01-02 2002-07-11 The Charles Stark Draper Laboratory, Inc. Method for microfabricating structures using silicon-on-insulator material

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US5343064A (en) * 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
US5473945A (en) * 1990-02-14 1995-12-12 The Charles Stark Draper Laboratory, Inc. Micromechanical angular accelerometer with auxiliary linear accelerometer
US5331852A (en) * 1991-09-11 1994-07-26 The Charles Stark Draper Laboratory, Inc. Electromagnetic rebalanced micromechanical transducer
US5635639A (en) * 1991-09-11 1997-06-03 The Charles Stark Draper Laboratory, Inc. Micromechanical tuning fork angular rate sensor
US5408877A (en) * 1992-03-16 1995-04-25 The Charles Stark Draper Laboratory, Inc. Micromechanical gyroscopic transducer with improved drive and sense capabilities
US5349855A (en) * 1992-04-07 1994-09-27 The Charles Stark Draper Laboratory, Inc. Comb drive micromechanical tuning fork gyro
US5377524A (en) * 1992-06-22 1995-01-03 The Regents Of The University Of Michigan Self-testing capacitive pressure transducer and method
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Patent Citations (5)

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US6296779B1 (en) * 1996-05-31 2001-10-02 The Regents Of The University Of California Method of fabricating a sensor
EP1058143A2 (en) * 1999-05-28 2000-12-06 Mitsubishi Denki Kabushiki Kaisha A micro-mirror device and a method for producing a micro-mirror device
US6277666B1 (en) * 1999-06-24 2001-08-21 Honeywell Inc. Precisely defined microelectromechanical structures and associated fabrication methods
US20020081821A1 (en) * 2000-12-27 2002-06-27 Cleopatra Cabuz SOI/glass process for forming thin silicon micromachined structures
WO2002054475A1 (en) * 2001-01-02 2002-07-11 The Charles Stark Draper Laboratory, Inc. Method for microfabricating structures using silicon-on-insulator material

Also Published As

Publication number Publication date
US20040065638A1 (en) 2004-04-08
WO2004033365A2 (en) 2004-04-22
AU2003273368A1 (en) 2004-05-04

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