WO2004027108A2 - Procede de synthese controlable de films de carbone a structures de carbone composites - Google Patents

Procede de synthese controlable de films de carbone a structures de carbone composites Download PDF

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Publication number
WO2004027108A2
WO2004027108A2 PCT/CA2003/001355 CA0301355W WO2004027108A2 WO 2004027108 A2 WO2004027108 A2 WO 2004027108A2 CA 0301355 W CA0301355 W CA 0301355W WO 2004027108 A2 WO2004027108 A2 WO 2004027108A2
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WO
WIPO (PCT)
Prior art keywords
walled
layer
substrate
fuuerenes
nanotubes
Prior art date
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PCT/CA2003/001355
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English (en)
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WO2004027108A3 (fr
Inventor
Zoya Kosakovskaya
Alexandre Iarochenko
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Ht Innovative Technologies, Llc
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Priority to AU2003264212A priority Critical patent/AU2003264212A1/en
Publication of WO2004027108A2 publication Critical patent/WO2004027108A2/fr
Publication of WO2004027108A3 publication Critical patent/WO2004027108A3/fr

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/152—Fullerenes
    • C01B32/154—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/02—Single-walled nanotubes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/06—Multi-walled nanotubes

Definitions

  • This invention relates to a process of controllable growth of pure carbon films out of single-walled fuUerenes (SWF), multi-walled fuUerenes (MWF), well oriented single-walled nanotubes (SWNT) and multi-walled
  • MWNT nanotubes
  • Carbon nanotubes can function as either a conductor such as a
  • Carbon nanotubes have shown
  • fuUerenes and carbon nanotubes They are as follows: arc discharge of
  • amorphous carbon and graphite particles is formed.
  • metal particles are added to the source.
  • particles are injected into the steam phase of carbon and serve as a
  • particles for example Ni, Co, Fe etc., which pollute the initial product, are
  • the CVD method does not allow controlling parameters of structure
  • the nanotubes layer to change the angle of nanotubes orientation, etc.
  • the carbon arc method is the most common way to produce
  • carbon nanotubes are produced by successively repositioning an axially
  • carbon nanotubes are produced by submerging carbonaceous anode and cathode electrodes in liquid nitrogen or other suitable liquefied materials such as helium or hydrogen (they must be ultra pure). Passing a direct current between electrodes to strike a plasma arc between anode and
  • cathode erodes carbon from the anode and deposits carbon nanotubes on
  • the apparatus and method comprising novel electrodes for use in
  • the electrodes have interior conduits for
  • the anode (compound anode) is optionally made from more than one material.
  • the materials assist by providing reaction ingredients and a catalyst or affecting the reaction kinetics.
  • the disclosed method is used for producing nano-scale particles and tubes, comprising essentially materials chosen from the group 6-BN, BC 2 N or BC 3 .
  • a second method using laser ablation a laser is used to vaporize the carbon that is being condensed in the form of carbon nanotubes.
  • a laser ablation system disclosed in United States Patent No. 6.331.690 B1 issued December 18, 2001 produces SWNT from carbon vapor in the presence of Ni, Co, Pt, Pd or alloys containing at least two said materials.
  • the carbon vapor and the catalyst vapor are constantly generated from a carbon pellet and a catalyst pellet under radiation of YAG laser beams so that the SWNTs are constant in diameter.
  • Carbon nanotubes layer is being
  • the substrate is an amorphous silicon or poly-silicon substrate, on which a catalytic metal layer is formed.
  • a hydrocarbon series gas may be used as a plasma
  • a membrane with channels serves as the host material for the synthesis. Channels of the membrane have a diameter of 30 - 35
  • Parallel-aligned nanosubstances can be synthesized in these channels over a relatively large area ( ⁇ 1 cm 2 ) by using an electron
  • ERP-CVD cyclotron resonance chemical vapor deposition
  • nanosubstances include carbon-based nanosubstances, silicon
  • the precursor gas includes carbon- containing gas (C x H y , where x and y are positive integers), carbon-based
  • nanosubstances can be synthesized.
  • Catalytic particles contain at least one
  • weight is less than 40% of weigh of the total solid carbon product formed
  • carbon nanotubes have a shape of a fiber (wire) with an external diameter of about 0.7 - 5 nm (SWNT) and about 2-50 nm (MWNT). This is clearly seen in large quantities of catalytic particles, carbon or amorphous carbon
  • United States Patent No. 6,350,488 B1 discloses a method of synthesizing carbon nanotubes, which includes forming of metal catalyst
  • the metal catalyst layer is etched to form isolated
  • nano-sized catalytic metal particles and carbon nanotubes, only vertically
  • etching gas may be ammonia, hydrogen or hydride. As disclosed, this
  • method of synthesis can produce carbon nanotubes with a diameter from a few nanometers to hundreds nanometers and with a length from a few
  • H 2 / inert gas e.g. Ar
  • the carbon nanotubes have a diameter of 300 - 350 nm.
  • An objective of this invention is to provide a method of controllable
  • Carbon films comprised of one or more homogenous layers (single-layer (SLCF) or
  • each layer can include the same fuUerenes or carbon nanotubes in controllable different forms such as SWF, MWF,
  • controllable method allows synthesis of carbon films
  • This method is also able to change the angle of
  • orientation of nanotubes in the range of ⁇ 45° towards to the perpendicular to the surface of substrates on which they are being grown.
  • nanotube orientation with respect to the substrate surface can be
  • Carbon nanotubes are well controlled during growth of the nanotube. Carbon nanotubes are well
  • the present invention provides a method of synthesizing pre ⁇
  • vapor phase interfacial region adjacent to a surface of the substrate by directing at least one carbon particle flux to the surface, and controlling a
  • the present invention also provides a product comprising a pre- selected carbon structure selected from the group consisting of one or
  • vapor phase interfacial region adjacent to a surface of the substrate by directing at least one carbon particle flux to the surface, and controlling a
  • the present invention also provides a product comprising at least
  • the present invention also provides a product comprising at least
  • nanotubes having a first longitudinal section with a first cylindrical axis oriented substantially perpendicular to the surface of the substrate and the
  • single-walled nanotubes having a second longitudinal section inclined at a pre-selected angle to the first longitudinal section.
  • the present invention also provides a product comprising at least one layer of single-walled or multi-walled fuUerenes on a surface of a substrate and at least one layer of single-walled nanotubes on the at least
  • the present invention also provides a product comprising at least one layer of single-walled or multi-walled fuUerenes on a surface of a
  • Figure 1 shows a cross-sectional view illustrating a two-layer carbon film produced from carbon fuUerenes and carbon nanotubes produced in accordance with the method of the present invention
  • Figure 2 is a schematic view of the process of fullerene synthesis by the mixing of two carbon particle flows with "cold" condensation centers in the interface area;
  • Figure 3a and Figure 3b are schematic illustrations of configurations similar to Figure 2 for obtaining carbon films comprised of carbon nanotubes with controllable angle of inclination from the axis of nanotubes
  • Figure 4 is a schematic illustration of apparatus used for the synthesis using evaporation of carbon by electron beam, also this apparatus can be used for the synthesis using evaporation of carbon by laser ablation, arc discharge and plasma discharge;
  • Figure 5 is a schematic illustration of another apparatus used for the synthesis of carbon nanotubes based on the outline in Figures 3a and 3b;
  • the nanotube has a diameter is 6.3 A and the diameter
  • Figure 8a is an STM image of carbon nanotube layer on quartz
  • Figure 8b shows a high precision transmission electron microscope
  • Figure 9a shows a STM image of a carbon nanotube film on a quartz substrate
  • Figure 9b shows a HTEM image of the carbon nanotubes of Figure
  • Figure 10 is an SEM image of carbon film of carbon nanotubes
  • Figure 11 is an SEM image of carbon film of carbon nanotubes
  • Figure 12 is a timing chart showing the process for obtaining
  • particles describes particles that are formed due to partial re-evaporation (re-reflection) of "hot carbon particles" from the surface of the substrate
  • substrate temperature can be from 300 K and above, but not
  • cold carbon flux or "cold carbon particles” can also form from an
  • particles means particles that are formed by evaporation of carbon particles into the vapor phase by electron beam or by other method, for example, laser or arc discharge evaporation.
  • fullerene(s) is a commonly accepted name for a special form of existence of super-molecules of carbon, for
  • the present invention provides a method for producing carbon
  • films which include layers preferably made up of fuUerenes, oriented
  • SWF to SWNT for example, SWF to SWNT or MWF to MWNT
  • the diameter of the nanotubes may vary and may be 0.63 nm and above.
  • Figure 2 shows a schematic view the fullerene synthesis by mixing
  • the substrate 12 is of two carbon particle fluxes from two separate carbon sources with "cold" condensation centers in interface area of the substrate.
  • a first carbon source 22 is aligned with the substrate 12 and a second carbon source 24 is positioned at an angle with respect
  • first hot flux 26 of saturated vapor phase carbon particles and emanating from carbon source 24 is a second cold flux 28 of saturated vapor phase carbon with
  • the “hot and cold carbon particles” may contain carbon atoms (C1 ), dimers of carbon (C2) ..., C6 and also compounds of a higher degree,
  • microclumps and microparticles of carbon are also present.
  • the density and temperature of the carbon fluxes can be controlled
  • Examples 1 - 5 give non-limiting examples.
  • the flow of "cold" carbon particle flux 28 is directed in such a way
  • phase with condensation centers in the form of "cold" carbon particles is formed near the substrate's surface thus producing a super saturated carbon vapor interface 30 in the vicinity of the top surface of substrate 12.
  • a flux of "hot” carbon particles is formed by evaporation of graphite by for example electron beam bombardment.
  • the "mirror" 48 can be any type of (conductor, semiconductor or dielectric).
  • the "mirror" 48 can be any type of (conductor, semiconductor or dielectric).
  • the "mirror" 48 can be any type of (conductor, semiconductor or dielectric).
  • the mirror's temperature can be 300 K and above, depending on the required
  • R increases, i.e. R >
  • nanotubes oriented perpendicular to the surface of the substrate 12, are obtained.
  • the flux of "hot” carbon particles is oriented under
  • nanotubes oriented under the angle ⁇ to the normal to the substrate, are
  • nanotubes change, which differs from the process shown in Figure 2.
  • angle ⁇ it is possible to vary orientation and properties of
  • the substrate material may be of any material.
  • present invention is advantageous in that it allows following: obtaining of
  • chirality in different areas of the length including obtaining of p-n boundary in the single or multi-walled nanotubes with two sections; obtaining carbon structures out of layers of fuUerenes and nanotubes.
  • nanostructures may be grown using electron beam evaporation in vacuum
  • the flux of hot carbon particles is called a flux of "thermal"
  • a flux of "cold" carbon particles 64 is formed due to partial re-evaporation (re-reflection) of carbon from the
  • the substrate temperature may be controlled during film growth and
  • Flux density is defined as a number (N) of carbon particles that passes through a unit of surface area (cm 2 ) within
  • Carbon phases consist of fuUerenes and amorphous carbon.
  • the film consists of combination of fuUerenes, multi-walled
  • nanotubes oriented towards the flow. Having changed the angle between the substrate and the direction of the flow of "hot" carbon particles during
  • ⁇ ° is achieved by changing angular position in a space of the substrate in
  • a source of electrons 52 produces a beam of electrons
  • region 62 is formed in front of the substrate 12 out of which a flow of re-
  • FIG. 5 shows a more detailed schematic illustration of an
  • the apparatus 70 includes a second source of carbon 78, which is inclined at an angle with respect to source
  • a source of "cold” carbon particles is in the form of a mirror 80 which reflect carbon particles from source 74 that reach mirror 80 through a screen 82
  • Apparatus 70 includes dual sets of vacuum pumps 94 and
  • pump 94 being a preliminary pump for obtaining a pressure of P ⁇
  • Substrate 90 may be
  • heater/cooler 98 may be an electrically controlled
  • Valves 102, 104 and 106 are used to control the pumping of
  • STM scanning tunneling microscope
  • HTEM Electronic Microscopy
  • a film consisting of combination of MWNT and SWNT oriented normal to the substrate surface was synthesized on the silicon substrate with the diameter of 100 mm.
  • FIGS 8a and 8b display STM image of the structure of nanotube
  • Figures 9a and 9b display STM image of the structure of nanotube film on quartz, and also High Precision Transmission Electronic
  • HTEM Microscopy
  • one or more layers of multi- walled fuUerenes can first be grown on the substrate or layers of multi- walled fuUerenes can be combined with layers of single-walled fuUerenes in any order depending on the mode of operation of the cold flux (density ratio R ⁇ 1/60 produces single-walled fuUerenes and 1/160 ⁇ R 1/60 prduces multi-walled fuUerenes).
  • the type of the top row of fuUerenes will define the type of nanotubes that can grow on top of it, i.e. single-walled nanotubes can only grow off the single-walled fuUerenes and multi-walled nanotubes can only grow off the multi-walled fuUerenes.
  • Figure 12 displays a general time diagram of obtaining of various nanoscale carbon films using for example the apparatus shown in Figure 5. It is noted that in order to grow the carbon nanotubes, at least one layer of fuUerenes, single-walled (shown as "on" in column I with R about 1/59)
  • fuUerenes which are substantially perpendicular to the surface of the substrate using a flux of hot carbon particles which is oriented normal to
  • fullerenes/nanotube/multi-inclined nanotubes may be grown.
  • nanotubes can also be grown with the first
  • section inclined or tilted to the surface and the nanotubes may have

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

L'invention concerne un procédé de croissance contrôlable de structures de carbone pur, y compris des films plans, de fullerènes à paroi unique (SWF), de fullerènes multiparoi (MWF), de nanotubes à paroi unique bien orientés (SWNT) et de nanotubes multiparoi (MWNT), sur des substrats variés. Des structures peuvent être formées sur la surface et comprennent toute combinaison de fullerènes, nanotubes, nanotubes incurvés ou inclinés, avec flexions simples ou multiples dans les nanotubes.
PCT/CA2003/001355 2002-09-17 2003-09-17 Procede de synthese controlable de films de carbone a structures de carbone composites WO2004027108A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003264212A AU2003264212A1 (en) 2002-09-17 2003-09-17 Process of controllable synthesis of carbon films with composite structures

Applications Claiming Priority (2)

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US41108302P 2002-09-17 2002-09-17
US60/411,083 2002-09-17

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1614765A2 (fr) * 2004-07-07 2006-01-11 Commissariat A L'Energie Atomique Croissance à basse températurede nanotubes de carbone orientés

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0947466A1 (fr) * 1997-03-21 1999-10-06 Japan Fine Ceramics Center Procede de production de nanotubes de carbone, procede de production d'une pellicule de nanotubes de carbone et structure pourvue d'une pellicule de nanotubes de carbone
WO2000063115A1 (fr) * 1999-04-16 2000-10-26 Commonwealth Scientific And Industrial Research Organisation Films de nanotubes de carbone a multiples couches
US6147407A (en) * 1998-03-27 2000-11-14 Lucent Technologies Inc. Article comprising fluorinated amorphous carbon and process for fabricating article
US20020031615A1 (en) * 2000-06-02 2002-03-14 Dykes John W. Process for production of ultrathin protective overcoats
EP1205436A1 (fr) * 2000-11-13 2002-05-15 International Business Machines Corporation Cristaux comprenant des nanotubes de carbone à paroi simple
CN1353084A (zh) * 2000-11-13 2002-06-12 国际商业机器公司 单壁碳纳米管的制造方法及应用

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0947466A1 (fr) * 1997-03-21 1999-10-06 Japan Fine Ceramics Center Procede de production de nanotubes de carbone, procede de production d'une pellicule de nanotubes de carbone et structure pourvue d'une pellicule de nanotubes de carbone
US6147407A (en) * 1998-03-27 2000-11-14 Lucent Technologies Inc. Article comprising fluorinated amorphous carbon and process for fabricating article
WO2000063115A1 (fr) * 1999-04-16 2000-10-26 Commonwealth Scientific And Industrial Research Organisation Films de nanotubes de carbone a multiples couches
US20020031615A1 (en) * 2000-06-02 2002-03-14 Dykes John W. Process for production of ultrathin protective overcoats
EP1205436A1 (fr) * 2000-11-13 2002-05-15 International Business Machines Corporation Cristaux comprenant des nanotubes de carbone à paroi simple
CN1353084A (zh) * 2000-11-13 2002-06-12 国际商业机器公司 单壁碳纳米管的制造方法及应用

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
FARTASH A: "GROWTH AND MICROSTRUCTURE OF INTERFACIALLY ORIENTED LARGE-CRYSTALLINE-GRAIN C60 SHEETS" APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 64, no. 14, 4 April 1994 (1994-04-04), pages 1877-1879, XP000440908 ISSN: 0003-6951 *
NERUSHEV O A ET AL: "The temperature dependence of Fe-catalysed growth of carbon nanotubes on silicon substrates" PHYS B CONDENS MATTER; PHYSICA B: CONDENSED MATTER OCTOBER 2002, vol. 323, no. 1-4, 3 October 2001 (2001-10-03), pages 51-59, XP001202159 *
ZHANG YUEGANG ET AL: "Electric-field-directed growth of aligned single-walled carbon nanotubes" APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 79, no. 19, 5 November 2001 (2001-11-05), pages 3155-3157, XP012029335 ISSN: 0003-6951 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1614765A2 (fr) * 2004-07-07 2006-01-11 Commissariat A L'Energie Atomique Croissance à basse températurede nanotubes de carbone orientés
FR2872826A1 (fr) * 2004-07-07 2006-01-13 Commissariat Energie Atomique Croissance a basse temperature de nanotubes de carbone orientes
EP1614765A3 (fr) * 2004-07-07 2006-05-03 Commissariat A L'Energie Atomique Croissance à basse températurede nanotubes de carbone orientés
US8034218B2 (en) 2004-07-07 2011-10-11 Commissariat A L'energie Atomique Low temperature growth of oriented carbon nanotubes

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WO2004027108A3 (fr) 2004-11-04
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