WO2004025701A2 - Load lock optimization method and system - Google Patents
Load lock optimization method and system Download PDFInfo
- Publication number
- WO2004025701A2 WO2004025701A2 PCT/US2003/028213 US0328213W WO2004025701A2 WO 2004025701 A2 WO2004025701 A2 WO 2004025701A2 US 0328213 W US0328213 W US 0328213W WO 2004025701 A2 WO2004025701 A2 WO 2004025701A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- load
- set point
- time
- state
- implant
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 79
- 238000005457 optimization Methods 0.000 title description 19
- 239000007943 implant Substances 0.000 claims abstract description 62
- 230000008859 change Effects 0.000 claims abstract description 15
- 238000005086 pumping Methods 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims description 28
- 238000011084 recovery Methods 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 30
- 230000008569 process Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000004590 computer program Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
- G05B19/41865—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM] characterised by job scheduling, process planning, material flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/32—Operator till task planning
- G05B2219/32291—Task sequence optimization
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/45—Nc applications
- G05B2219/45032—Wafer manufacture; interlock, load-lock module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
Definitions
- the methods and systems relate to semiconductor wafer processing, and more particularly to optimizing throughput of wafer processing.
- a large variety of materials can be used in the production of wafer cassettes, with particular materials being used to meet various goals including particulate control, static discharge reduction, weight, cost and dimensional stability. While a particular material choice may achieve its goal, it may have negative effects on other aspects of wafer processing. For example, plastic cassettes or photoresist on a wafer can exhibit many structural properties that make their use desirable, however they may have negative effects on the vacuum needed during wafer processing. High and repeatable vacuum may be required in ion implanters during wafer processing to assure correct dose repeatability and uniformity as well as to maintain throughput of the implanter or tool, i.e., the number of wafers that may be processed over a given time.
- a wafer cassette may be loaded into a load lock station in preparation for transferring the wafers to a processing, or implant, chamber.
- a load lock vacuum pump can be used to bring down the pressure in the load lock to a level consistent with the implant chamber vacuum.
- the load lock may then be opened to the implant chamber and the wafer transferred into the chamber.
- opening the load lock may result in a pressure burst in the chamber, such that a vacuum recovery period may be required to return the pressure within the chamber to levels acceptable for implanting, i.e., levels where the desired process parameter, such as implant dose repeatability, uniformity, energy contamination and/or tool throughput, can be achieved.
- the time to first implant i.e., the time from the start of load lock pump down until implanting may be started can include a load lock pump down time and a process chamber vacuum recovery time.
- load lock pump down may continue until a set point pressure in the load lock is reached and the load lock is opened to the implant chamber.
- the vacuum recovery period may begin.
- Vacuum recovery within the chamber may continue until the implant chamber reaches the implant chamber set point pressure.
- the implant chamber set point pressure may be chosen to provide the desired repeatability and uniformity of the wafers processed.
- the load lock set point pressure and the implant chamber set point pressure may be kept constant, the various materials used in wafer processing can have widely disparate effects on the vacuum recovery period required due to outgassing, adsorption and absorption properties of the materials.
- the time to first implant, and consequently the throughput of the wafer processing system may vary with the materials used, even though the load lock and chamber set point pressures can have been maintained. Summary
- a method of optimizing a state change may comprise isolating a load at a first state, bringing the load from the first state to a lock set point state, exposing the load to an environment at a second state, wherein the second state may be disturbed by the exposing, re-establishing the second state and optimizing the time to re-establish the second state as a function of the time to reach the lock set point state.
- the second state may be re-established when the environment reaches an operating set point state.
- the method and system may determine if a predefined number of data points has been obtained and may increment the time for bringing the load from the first state to the lock set point state when the predefined number of data points has not been obtained, so as to return to obtain additional data points.
- the method and system may determine the optimum of the state change.
- the optimum of the state change may be a minimum of a combination of the time for bringing the load from the first state to the second state and the time for reaching an operating set point state.
- the method and system may include determining if the minimum is finalized, returning to incrementing, isolating, bringing, exposing and re-establishing when the minimum is not finalized and ending when the minimum is finalized.
- the method may be used with a wafer implanter where a wafer cassette of wafers may be inserted and sealed into a load lock of the wafer implanter.
- the load lock may be pumped down from an ambient pressure to a vacuum pressure and may then be opened to the implant chamber of the wafer implanter.
- re- establishing may include returning to an implant ready state and optimizing may include incrementing the time for pumping down the load lock and repeating the method to obtain additional data points for determining a minimum of a combination of the time for pumping down and the time for returning to an implant ready state.
- a system for implementing the method may include a system having means for determining pump down times for a load lock of the implanter with a load to reach incremental set points, means for determining a time to first implant for each respective set point based on the pump down time determined for the respective set point and a recovery time for an implant chamber to return to an implant ready state after the load lock is opened to the implant chamber upon reaching the respective set point and means for minimizing the time to first implant as a function of the pump down time.
- a computer-readable medium may contain instructions for controlling a processing system to implement the system.
- Fig. 1 may depict a flow chart for a method of optimizing state change process
- Fig. 2 may depict a schematic representation of an implanter that may implement the method of Fig. 1
- Fig. 3 may depict a plot of results of the method of Fig. 1.
- FIG. 1 there can be shown a flow chart for a method 100, as shown in Fig. 1, that may optimize a process wherein a load in a first state is required to be brought to a second state in order to operate on the load.
- An exemplary process may include implanting a wafer, where the wafer may originally be at ambient pressure, the first state, and may need to be brought to a high vacuum, the second state, for implanting, as previously described.
- the implementation of the method 100 may be subsequently described herein in terms of the exemplary implanting process.
- the method 100 may find application in optimizing various processes having the generalized features that may be exemplified by the implanting process, including, but not limited to, other semiconductor wafer processing processes and other ion implantation processes, such as may be used for implanting prosthetics and other devices that may require a high level of surface hardness.
- the method 100 may optimize the time to first implant of an ion implanter and thereby improve throughput of the implanter.
- Fig. 2 may show a schematic representation of portions of an ion implanter 10.
- the method 100 may begin by inserting, at 102, a load 12 into an isolation lock that may be used to isolate the load 12 while the load 12 may be brought from a first state to a second state at 104.
- the load 12 may be a wafer, or a cassette of wafers, 12 that may be inserted into a load lock 14 of the implanter 10 through an insertion opening 16.
- the load lock 14 may be at a first pressure during the insertion, referred to herein as ambient pressure.
- the wafer or wafer cassette 12 may be isolated, or sealed within load lock 14, by closing opening 16 and pump down of the load lock 14 can begin at 104 and can continue until the set point for the load lock 14 may be reached, as determined at 106.
- the set point for the load lock 14 may be the set point pressure for the load lock, as previously described.
- This set point pressure may be a predetermined set point pressure for the implanter 10 and, as may be standard for such implanters, pressure measurements may be taken within the load lock 14 to determine, at 106, when the set point pressure may be reached.
- a lock set point may correspond with the second state and a sensor in the lock may monitor the state change in the lock.
- the time required to reach the lock set point may be recorded at 108 and may be referred to as "set point time".
- the isolation lock, or load lock 14 can be opened, at 110, to expose the load to the second state environment, i.e., opening the load lock 14 to the implant chamber 18 for the implanter example of Fig. 2, as by opening isolation valve 20 and slot 22.
- opening the load lock 14 to the implant chamber 18 may cause a pressure burst at the implant chamber 18.
- Method 100 may account for such abrupt changes in the second state environment by including a state recovery period, at 112, during which the second state may be re-established, as determined at 114. The second state may be re-established when the environment may attain a predetermined operation set point.
- the pressure burst may raise the pressure within implant chamber 18 and re-establishing the second state at 112 may require reducing the pressure within implant chamber 18 until a chamber set point pressure can be attained.
- the chamber set point pressure may be a pressure at which implants may provide satisfactory repeatability and uniformity, as discussed previously.
- the time at which the second state is re-established may be recorded at 116 as the time to first operating condition, i.e., the time taken to reach a condition within the chamber 18 when an implant may begin.
- the isolation lock, or load lock 14 may then be closed, or isolated from the second environment, or implant chamber 18, at 118, and allowed to return to the first state, or ambient pressure for the implanter 10.
- the time to first operating condition may be plotted as a function of the set point time.
- Fig. 3 may show such a plot, with the results of an exemplary first iteration of method 100 for the implanter 10, as recorded at 108 and 116, plotted and labeled "Al".
- optimization as at 120, may require obtaining a sufficient number of data points.
- monitoring the state change within the isolation lock may not provide the optimum results, as noted previously for the implanter 10 example.
- the set point time may be incrementally changed, as at 122, and, using the set point time as the lock set point, method 100 may return to 102 to obtain new data points, which may be recorded at 108 and 116.
- Method 100 may increment the set point time and obtain additional data points until sufficient data points, as determined at 124, may be provided to perform the optimization and obtain the optimum point, as at 126.
- the time to first implant may be optimized as a function of the pump down time, or, conversely, the time to first implant may be minimized by optimizing the load lock pump down time.
- numerous optimization methods may be well-known in the art and may include manual curve fitting, curve fitting algorithms and other numerical analysis methods. The optimization method chosen may define the number of data points needed for the optimization.
- optimization may begin with the first set of data points, i.e., the predefined number of data points may be one, and a new optimum set point time can be determined after each incrementation.
- the optimization method chosen may also determine the sequence of incrementing the set point time and the number of data points required.
- the plot for the illustrated example of Fig. 3 may be based on the use of an E5-767 implanter with a turbomolecular pump (as provided by Varian Semiconductor Equipment Associates of Gloucester, Massachusetts) and a polycarbonate cassette of wafers. To illustrate the method, six data points, A1-A6, may be plotted and the optimization performed at 124 may include manually fitting a curve 30 to the data points A 1 -A6.
- a load lock pump down time of approximately sixty seconds may provide the shortest time to first implant of approximately 250 seconds.
- the curve 30 may depend on the specific equipment and materials used, as well as the optimization method chosen.
- the time to first implant may be decreased by more than a factor of two.
- increasing load lock pump down time may also increase uniformity and dose repeatability, as the outgassing of the cassette material, the wafers, and/or the photoresist on the wafers, may be lessened with increased load lock pump down.
- curve 30 may indicate that, for load lock pump down times greater than sixty seconds, further increases in uniformity and dose repeatability may be attained at the expense of increasing time to first implant.
- the choice of optimization method may include the use of a processing system, such as implant controller 24, programmed to perform the optimization, i.e., programmed to control the incrementation of the set point and the determination of the number of data points to obtain.
- the controller 24 may also include timing means 24a and memory 24b to mark and record the set point time and the time to first operating condition or time to first implant, as described at 108 and 116 of method 100.
- the method 100 may be separate from or may be part of a production process.
- the method 100 may be implemented on test specimens of the load, prior to actual production processing of loads.
- the processing system can maintain optimization data for various test specimens and the production process can be set to operate at the optimized set point for the test specimen matching the production load.
- method 100 can determine, at 128, if the optimization can be finalized for the test specimens. When method 100 determines that the optimization may be finalized, method 100 can exit with the optimized set point for the test specimens.
- method 100 may be implemented at the start of production processing, with the first loads serving to establish the optimization for the remainder of the loads to be processed. Implementation of method 100 may also be continued throughout production processing, with the optimization being updated with each load, or set of loads, processed.
- optimization may not be finalized and 128 can return to 122 to increment the lock set point time and return to 102 for production processing of another load. The increment can be such that the lock set point may correspond with the optimum determined at 126.
- the ion implanter 10 may illustrate but one example of the implementation of method 100. It can be understood that many different processes that may incorporate a state change may benefit from the use of method 100. Additional examples of state changes can include gaseous state changes, e.g., from an air environment to a single gas environment, liquid to gas or gas to liquid state changes, temperature changes, as well as pressure changes, as shown in the ion implanter example, and other state changes, or combinations thereof as may be known.
- pump 26 may perform a rough evacuation, or pump down of the load lock 14.
- a turbomolecular pump 28 may perform the final pump down to the set point pressure.
- the arrangement of the components shown in the figures may be merely for illustrative purposes and can be varied to suit the particular implementation of interest. Accordingly, items may be combined, expanded, or otherwise reconfigured without departing from the scope of the disclosed methods.
- the implementation of the methods and the control of the systems as described herein in relation to the processing system, or controller 24, may not be limited to particular hardware or software configuration, and may find applicability in many processing environments used for the control of production processes.
- the methods can be implemented in hardware or software, or a combination of hardware and software.
- the methods can be implemented in one or more computer programs executing on one or more programmable computers that include a processor, such as controller 24, a storage medium readable by the processor, such as memory 24b, one or more input devices, and one or more output devices.
- a processing system or controller 24 may be part of the system where method 100 may be used.
- the methods may be implemented on a computer in a network.
- the computer program, or programs may be preferably implemented using one or more high level procedural or object-oriented programming languages to communicate with a computer system; however, the programs can be implemented in assembly or machine language, if desired. The language can be compiled or interpreted.
- the computer programs can be preferably stored on a storage medium or device (e.g., CD-ROM, hard disk, or magnetic disk) readable by a general or special purpose programmable computer for configuring and operating the computer when the storage medium or device may be read by the computer to perform the procedures described herein.
- the method and system can also be considered to be implemented as a computer-readable storage medium, configured with a computer program, where the storage medium so configured may cause a computer to operate in a specific and predefined manner.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Quality & Reliability (AREA)
- Automation & Control Theory (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004536378A JP2005538567A (en) | 2002-09-10 | 2003-09-10 | Load lock optimization method and system |
EP03752140A EP1540558A2 (en) | 2002-09-10 | 2003-09-10 | Load lock optimization method and system |
AU2003270447A AU2003270447A1 (en) | 2002-09-10 | 2003-09-10 | Load lock optimization method and system |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23830502A | 2002-09-10 | 2002-09-10 | |
US10/238,305 | 2002-09-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004025701A2 true WO2004025701A2 (en) | 2004-03-25 |
WO2004025701A3 WO2004025701A3 (en) | 2005-01-27 |
Family
ID=31990947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/028213 WO2004025701A2 (en) | 2002-09-10 | 2003-09-10 | Load lock optimization method and system |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1540558A2 (en) |
JP (1) | JP2005538567A (en) |
KR (1) | KR20050042807A (en) |
AU (1) | AU2003270447A1 (en) |
TW (1) | TW200406049A (en) |
WO (1) | WO2004025701A2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012146906A1 (en) * | 2011-04-27 | 2012-11-01 | Edwards Limited | Apparatus and method for self-tuning a processing system |
CN103370767A (en) * | 2011-02-13 | 2013-10-23 | 应用材料公司 | Method and apparatus for controlling a processing system |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5760693A (en) * | 1995-09-25 | 1998-06-02 | Samsung Electronics Co., Ltd. | Vacuum apparatus for semiconductor device |
US6328803B2 (en) * | 1997-02-21 | 2001-12-11 | Micron Technology, Inc. | Method and apparatus for controlling rate of pressure change in a vacuum process chamber |
-
2003
- 2003-09-10 JP JP2004536378A patent/JP2005538567A/en active Pending
- 2003-09-10 KR KR1020057004138A patent/KR20050042807A/en not_active Application Discontinuation
- 2003-09-10 WO PCT/US2003/028213 patent/WO2004025701A2/en not_active Application Discontinuation
- 2003-09-10 AU AU2003270447A patent/AU2003270447A1/en not_active Abandoned
- 2003-09-10 EP EP03752140A patent/EP1540558A2/en not_active Withdrawn
- 2003-09-10 TW TW092125020A patent/TW200406049A/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5760693A (en) * | 1995-09-25 | 1998-06-02 | Samsung Electronics Co., Ltd. | Vacuum apparatus for semiconductor device |
US6328803B2 (en) * | 1997-02-21 | 2001-12-11 | Micron Technology, Inc. | Method and apparatus for controlling rate of pressure change in a vacuum process chamber |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103370767A (en) * | 2011-02-13 | 2013-10-23 | 应用材料公司 | Method and apparatus for controlling a processing system |
CN103370767B (en) * | 2011-02-13 | 2016-10-12 | 应用材料公司 | For controlling the method and apparatus of processing system |
WO2012146906A1 (en) * | 2011-04-27 | 2012-11-01 | Edwards Limited | Apparatus and method for self-tuning a processing system |
CN103492963A (en) * | 2011-04-27 | 2014-01-01 | 爱德华兹有限公司 | Apparatus and method for self-tuning a processing system |
CN103492963B (en) * | 2011-04-27 | 2015-12-02 | 爱德华兹有限公司 | For equipment and the method for self-regulation disposal system |
US9423790B2 (en) | 2011-04-27 | 2016-08-23 | Edwards Limited | Apparatus and method for self-tuning a processing system |
TWI558916B (en) * | 2011-04-27 | 2016-11-21 | 愛德華有限公司 | Apparatus and method for self-tuning a processing system |
Also Published As
Publication number | Publication date |
---|---|
EP1540558A2 (en) | 2005-06-15 |
AU2003270447A1 (en) | 2004-04-30 |
JP2005538567A (en) | 2005-12-15 |
TW200406049A (en) | 2004-04-16 |
AU2003270447A8 (en) | 2004-04-30 |
WO2004025701A3 (en) | 2005-01-27 |
KR20050042807A (en) | 2005-05-10 |
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