WO2004021414A3 - Integrated circuit arrangements, in particular capacitor arrangements and corresponding production method - Google Patents

Integrated circuit arrangements, in particular capacitor arrangements and corresponding production method Download PDF

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Publication number
WO2004021414A3
WO2004021414A3 PCT/DE2003/002677 DE0302677W WO2004021414A3 WO 2004021414 A3 WO2004021414 A3 WO 2004021414A3 DE 0302677 W DE0302677 W DE 0302677W WO 2004021414 A3 WO2004021414 A3 WO 2004021414A3
Authority
WO
WIPO (PCT)
Prior art keywords
arrangements
integrated circuit
production method
corresponding production
particular capacitor
Prior art date
Application number
PCT/DE2003/002677
Other languages
German (de)
French (fr)
Other versions
WO2004021414A2 (en
Inventor
Klaus Goller
Original Assignee
Infineon Technologies Ag
Klaus Goller
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Klaus Goller filed Critical Infineon Technologies Ag
Publication of WO2004021414A2 publication Critical patent/WO2004021414A2/en
Publication of WO2004021414A3 publication Critical patent/WO2004021414A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

An integrated circuit arrangement (12) is disclosed, amongst other things, in which the thickness (D2a) of an etching stop layer (18a) is matched to the etching process such that contact holes (26, 28) of varying depths can be precisely etched as far as a top electrode (16a) and a base electrode (10a).
PCT/DE2003/002677 2002-08-12 2003-08-08 Integrated circuit arrangements, in particular capacitor arrangements and corresponding production method WO2004021414A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10236890.2 2002-08-12
DE2002136890 DE10236890A1 (en) 2002-08-12 2002-08-12 Integrated circuit arrangements, in particular capacitor arrangements, and associated manufacturing processes

Publications (2)

Publication Number Publication Date
WO2004021414A2 WO2004021414A2 (en) 2004-03-11
WO2004021414A3 true WO2004021414A3 (en) 2004-07-29

Family

ID=31196968

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/002677 WO2004021414A2 (en) 2002-08-12 2003-08-08 Integrated circuit arrangements, in particular capacitor arrangements and corresponding production method

Country Status (3)

Country Link
DE (1) DE10236890A1 (en)
TW (1) TW200405548A (en)
WO (1) WO2004021414A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0465044A2 (en) * 1990-06-27 1992-01-08 AT&T Corp. Method of etching for integrated circuits with planarized dielectric
US6211059B1 (en) * 1999-10-29 2001-04-03 Nec Corporation Method of manufacturing semiconductor device having contacts with different depths
EP1109223A1 (en) * 1999-12-13 2001-06-20 Matsushita Electronics Corporation Semiconductor device and method for fabricating the same
US20020033493A1 (en) * 2000-09-21 2002-03-21 Tomomi Yamanobe Semiconductor storage device and its manufacturing method
WO2002058117A2 (en) * 2001-01-17 2002-07-25 International Business Machines Corporation Metal-insulator-metal capacitor in copper

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3149817B2 (en) * 1997-05-30 2001-03-26 日本電気株式会社 Semiconductor device and method of manufacturing the same
US5906948A (en) * 1998-04-17 1999-05-25 Vanguard International Semiconductor Corporation Method for etching high aspect-ratio multilevel contacts
WO2002003458A1 (en) * 2000-06-30 2002-01-10 Sony Corporation Semiconductor device and its manufacturing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0465044A2 (en) * 1990-06-27 1992-01-08 AT&T Corp. Method of etching for integrated circuits with planarized dielectric
US6211059B1 (en) * 1999-10-29 2001-04-03 Nec Corporation Method of manufacturing semiconductor device having contacts with different depths
EP1109223A1 (en) * 1999-12-13 2001-06-20 Matsushita Electronics Corporation Semiconductor device and method for fabricating the same
US20020033493A1 (en) * 2000-09-21 2002-03-21 Tomomi Yamanobe Semiconductor storage device and its manufacturing method
WO2002058117A2 (en) * 2001-01-17 2002-07-25 International Business Machines Corporation Metal-insulator-metal capacitor in copper

Also Published As

Publication number Publication date
DE10236890A1 (en) 2004-03-04
TW200405548A (en) 2004-04-01
WO2004021414A2 (en) 2004-03-11

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