WO2004020693A1

WO2004020693A1 - Cleaning method for substrate-processing device and the device

Info

Publication number: WO2004020693A1
Application number: PCT/JP2003/010507
Authority: WO
Inventors: Yasuhiro Oshima; Hiroshi Kannan
Original assignee: Tokyo Electron Limited
Priority date: 2002-08-30
Filing date: 2003-08-20
Publication date: 2004-03-11
Also published as: JP2004091828A; AU2003257621A1

Abstract

A cleaning method for a substrate-processing device has a cleaning gas supply step for supplying cleaning gas in a processing container of the substrate-processing device with substances to be cleaned existing in the container and has a light radiation step for radiating light to inside the container to excite the cleaning gas.

Description

Description Cleaning method for substrate processing apparatus and substrate processing apparatus

The present invention relates to a cleaning method of a substrate processing apparatus for removing a substance attached to a processing container or the like of the substrate processing apparatus, and a substrate processing apparatus capable of performing the cleaning. Background art

2. Description of the Related Art Conventionally, as a film forming apparatus for forming a thin film on a semiconductor wafer (hereinafter simply referred to as a “wafer”), a film forming apparatus for chemically forming a thin film has been known. In such a film forming apparatus, a thin film is formed on a wafer by heating the wafer and supplying a processing gas into the chamber to cause a chemical reaction.

By the way, the reaction products adhere to the inner wall of the chamber after the thin film is formed on the wafer, the susceptor disposed in the chamber, and the like. If a thin film is formed on a wafer while the reaction product is attached to the inner wall of the chamber or the like, the reaction product may peel off from the inner wall or the like of the chamber and contaminate the wafer. For this reason, the inside of the chamber is periodically cleaned to remove reaction products adhering to the inner wall of the chamber and the like.

At present, cleaning of a film forming apparatus is mainly performed by either a heating cleaning method in which a chamber or the like is heated to a high temperature or a plasma cleaning method in which plasma is generated in a chamber.

However, the heating cleaning has a problem that the chamber and the like must be heated to a high temperature. In plasma cleaning, There is a problem that the chamber and the like are easily damaged because plasma is generated in the chamber. Disclosure of the invention

The present invention provides a method of cleaning a substrate processing apparatus capable of removing a substance to be cleaned at a low temperature and reducing damage to a processing container, and a method of cleaning such a substrate processing apparatus. It is an object of the present invention to provide a substrate processing apparatus which can obtain the same.

The cleaning method for a substrate processing apparatus according to the present invention includes a cleaning gas supply step of supplying a cleaning gas into a processing container in a state where a cleaning substance is present in a processing container of the substrate processing apparatus. And a light irradiation step of irradiating the processing vessel with light for exciting the cleaning gas. The cleaning gas supply step and the light irradiation step may be performed at the same time, or the cleaning gas supply step may be performed before the light irradiation step. Further, the cleaning material is not particularly limited, for example, T i, W, and a metal such as A 1, a metal nitride such as T i N, S i O ₂ such non-metal oxides, T Metal oxides such as a ₂ O ₅ , metal silicides such as WS i, and the like. ADVANTAGE OF THE INVENTION According to the cleaning method of the substrate processing apparatus of this invention, the to-be-cleaned substance can be removed at low temperature, and the damage of a processing container can be reduced.

The clean Lung gas may include at least one of a chlorine-containing gas and a fluorine-containing gas. Is a chlorine-containing gas, for example, C 1 ₂ and the like. When moistened with C 1 ₂ to click leaning gas, if example embodiment, T i, W, and a metal such as A 1, can be removed metal nitride such as T i N and the like. Examples of the fluorine-containing gas include SF ₆ and NF ₃ . If SF ₆ is included in the cleaning gas, For example, a metal such as T i, and W, metal nitrides, such as T i N, nonmetal oxides such as _{_{S 1 O 2, T a 2}} 0 good UNA metal oxide _5, WS i Such as metal silicides. Further, when moistened with NF ₃ in click leaning gas, for example, a metal such as T i, and W, yo UNA metal nitride T i N, yo UNA nonmetal oxides S i O _2, Metal oxides such as Ta ₂ O ₅ and metal silicides such as WS i can be removed. By including at least one of a chlorine-containing gas and a fluorine-containing gas in the cleaning gas, metals and the like can be removed.

The light is preferably ultraviolet light or infrared light. If the cleaning gas moistened with C 1 _{_2,} C 1 ₂ is excited at a wavelength of approximately 3 3 2 nm. When SF ₆ is included in the cleaning gas, SF ₆ is excited at a wavelength of about 947 nm. When NF ₃ is included in the clean gas, NF ₃ is excited at a wavelength of about 120 to 150 nm. By using ultraviolet light or infrared light as the light, the cleaning gas can be surely excited. The cleaning method of the substrate processing apparatus includes a light intensity measuring step of measuring the intensity of light transmitted through the light transmitting window of the processing container, and an end point detection of detecting an end point of the cleaning based on the measured light intensity. Preferably, the method further comprises a step. By further providing the light intensity measuring step and the end point detecting step, it is possible to suppress the consumption of the cleaning gas due to insufficient or excessive cleaning. .

The cleaning method of the substrate processing apparatus includes a light intensity measuring step of measuring the intensity of light reflected by an inner wall of the processing container or a member disposed in the processing container; and a method of measuring the intensity of the measured light. The method may further include an end point detection step of detecting an end point of the cleaning based on the result. The member provided in the processing container may be any member as long as it is a member existing in the processing container. By further comprising a light intensity measurement step and an end point detection step, It is possible to suppress the consumption of the cleaning gas due to insufficient cleaning or excessive cleaning.

A substrate processing apparatus according to the present invention includes: a processing container that stores a substrate; a processing gas supply system that supplies a processing gas for performing processing to the substrate into the processing container; and a cleaning substance to be cleaned in the processing container. It is characterized by comprising a cleaning gas supply system for supplying a cleaning gas for removal, and a light source for generating light for exciting the cleaning gas supplied into the processing container. ADVANTAGE OF THE INVENTION According to the substrate processing apparatus of this invention, the to-be-cleaned substance can be removed at low temperature, and the damage of a processing container can be reduced. The cleaning gas preferably contains at least one of a chlorine-containing gas and a fluorine-containing gas. By including at least one of the chlorine-containing gas and the fluorine-containing gas in the cleaning gas, metals and the like can be removed. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a schematic configuration diagram of a film forming apparatus according to the first embodiment. FIG. 2 is a flowchart showing a flow of film formation performed by the film formation apparatus according to the first embodiment.

FIG. 3 is a flowchart showing the flow of cleaning performed in the film forming apparatus according to the first embodiment.

FIGS. 4A and 4B are schematic process diagrams of cleaning according to the first embodiment.

FIG. 5 is a schematic configuration diagram of a film forming apparatus according to the second embodiment. FIG. 6 is a flowchart showing a cleaning flow performed in the film forming apparatus according to the second embodiment.

FIG. 7 is a schematic process diagram of a cleaning device according to the second embodiment. BEST MODE FOR CARRYING OUT THE INVENTION

(First Embodiment)

Hereinafter, a film forming apparatus according to the first embodiment of the present invention will be described. FIG. 1 is a schematic configuration diagram of a film forming apparatus according to the present embodiment.

As shown in FIG. 1, a film forming apparatus 1 includes a chamber 2 formed of, for example, aluminum / stainless steel. The chamber 2 may be subjected to a surface treatment such as an alumite treatment. An opening 2A is formed in a side portion of the chamber 2, and a semiconductor wafer (hereinafter, simply referred to as a "wafer") W is loaded into the chamber 2 near the opening 2A or when a wafer W is loaded. A goo valve 3 that opens and closes when unloading from the chamber 2 is installed.

In the chamber 2, a substantially disk-shaped susceptor 4 on which the wafer W is placed is disposed. The susceptor 4 is made of, for example, ceramic box, such as A 1 N and A 1 ₂ 0 _3. Inside the susceptor 4, a heater 5 for heating the susceptor 4 to a predetermined temperature is provided. By heating the susceptor 4 to a predetermined temperature with the heater 5, the wafer W placed on the susceptor 4 is heated to a predetermined temperature.

At four places of the susceptor 4, holes 4A for raising and lowering the wafer W are formed in a vertical direction. Below the hole 4A, wafer elevating pins 6 that can be inserted into the hole 4A are provided. The wafer lifting pins 6 are fixed to the wafer lifting pin support 7 so that the wafer lifting pins 6 stand upright. An air cylinder 8 is fixed to the wafer elevating pin support 7. When the rod 8A of the air cylinder 8 is contracted by the driving of the air cylinder 8, the wafer elevating pins 6 are lowered and the wafer W is placed on the susceptor 4. Ma In addition, the rod 8 A is extended by driving the air cylinder 8, so that the wafer elevating pins 6 are raised, and the wafer W is separated from the susceptor 4. Inside the chamber 2, an elastic bellows 9 that covers the rod 8A is provided. By covering rod 8A with bellows 9, the airtightness of chamber 2 チャンバ is maintained. ^J

Outside the chamber 2, a heater 10 for heating the chamber 2 to a predetermined temperature is wound. An opening is formed on the side of the chamber 2. The _{opening, T i C 1 4 T i} 'C 1 4 supply system 2 0 supplied into the chamber is connected. T i C 1 ₄ supply system 2 0 has a T i C 1 ₄ sources 2 1 containing a T i C l _4. T The i C 1 ₄ sources 2 1, one end is T i C 1 ₄ supply pipe 2 2 inserted into the opening is connected. The T i C 1 ₄ supply pipe 2 2, a mass flow controller (MF C) 2 4 to adjust the flow rate of the valve 2 3 and T i C 1 ₄ is interposed. In a state in which the mass flow controller 2 4 is adjusted, Ri by the that the valve 2 3 is opened, T i C 1 ₄ sources 2 1 T i C 1 ₄ at a predetermined flow rate from is supplied into the chamber 2 .

The T i C 1 ₄ supply pipe 2 2, NH ₃ supply system 3 0 is connected to supply the NH ₃ into Chiyanba 2. NH ₃ supply system 3 0 comprises a NH ₃ source 3 1 containing the NH _3. The NH ₃ supply source 3 1, NH ₃ supply pipe 3 2 whose one end is connected to the T i C 1 ₄ supply pipe 2 2 is connected. The NH ₃ supply pipe 32 includes a valve 33 and a mass flow controller 34 for adjusting the flow rate of NH ₃ . When the valve 33 is opened while the mass flow controller 34 is adjusted, NH ₃ is supplied into the chamber 2 from the NH ₃ supply source 31 at a predetermined flow rate.

A controller 35 for controlling the valves 23, 33 is electrically connected to the valves 23, 33 so that the valves 23, 33 are opened alternately. By controlling such valves 23 and 33 with the controller 35, the wafer A TiN film having excellent step coverage is formed on W.

The T i C 1 ₄ supply pipe 2 2, C 1 ₂ supply system 4 0 supplies the C 1 ₂ for removing T i N attached to Chiyanba 2 inner wall are connected. C 1 ₂ supply system 4 0 has a C 1 ₂ source 4 1 containing the C 1 _2. The C 1 ₂ source 4 1, C 1 ₂ supply pipe 4 2, one end of which is connected to the T i C 1 ₄ supply pipe 2 2 is connected. The C 1 ₂ supply pipe 4 2, a mass flow configuration preparative roller 4 4 to adjust the flow rate of the valve 4 3 and C 1 ₂ is that intervene. In a state in which the mass flow controller 4 4 is adjusted, Ri by the fact wither valve 4 3 is opened, C 1 ₂ is supplied into the chamber 2 from the C 1 ₂ source 4 1 at a predetermined flow rate.

An exhaust system 50 for exhausting the inside of the chamber 2 is connected to the bottom of the chamber 2. The exhaust system 50 is provided with an auto-chassis controller (APC) 51 for controlling the pressure in the chamber 2. The pressure in the chamber 2 is controlled to a predetermined pressure by adjusting the conductance by the automatic press controller 51.

A pressure reducing pump (not shown) is connected to the auto pressure controller 51 via an exhaust pipe 52. The inside of the chamber 2 is evacuated by operating a pressure reducing pump (not shown).

An opening is formed in the upper part of the chamber 2. An ultraviolet transmitting window 61 made of a material that transmits ultraviolet light, such as quartz, is fitted into the opening. A seal member 62 is provided between the chamber 2 and the ultraviolet transmission window 61. By providing the seal member 62, airtightness in the chamber 2 is maintained.

Above the ultraviolet light transmitting window 61, a mercury lamp 63 for generating ultraviolet light is provided. When the mercury lamp 63 is turned on, ultraviolet rays are generated from the mercury lamp 63 and ultraviolet rays are introduced into the chamber 2 through the ultraviolet transmitting window 61. Is done. On the back side of the mercury lamp 63, there is provided a reflecting plate 64 that reflects the ultraviolet rays emitted from the mercury lamp 63 and guides the ultraviolet rays to the ultraviolet ray transmitting window 61.

At the bottom of the chamber 2, an optical sensor 65 that mainly measures the intensity of light transmitted through the ultraviolet transmitting window 61 is provided. Here, as the amount of TiN attached to the ultraviolet transmission window 61 increases, the amount of light reflected by the TiN increases, so that the intensity of light measured by the optical sensor 65 decreases. That is, when the TiN attached to the ultraviolet transmitting window 61 decreases due to the cleaning, the light reflected by the Tin decreases, and the intensity of the light measured by the optical sensor 65 increases. From this, by measuring the intensity of the light transmitted through the ultraviolet transmission window 61, the degree of Tally Jung can be known.

The optical sensor 65 and the mercury lamp 63 detect the end point of the clearing based on the measurement result of the optical sensor 65, and control the bulb 43 and the mercury lamp 63 based on the detection result. Controller 66 is electrically connected. The controller 66 includes a memory 66A and a CPU 66B. The memory 66A stores light intensity information measured in a state where the Tin is not attached to the ultraviolet ray transmitting window 61. The CPU 66B calculates the memory 66A from the light intensity information stored in the memory 66A and the light intensity information measured by the light sensor 65 during the cleaning. The ratio of the light intensity measured during the clearing to the light intensity stored in the memory is calculated, and the calculated result is a predetermined numerical value N or more, for example, 0.9 or more. Is determined. Note that the predetermined numerical value N satisfies 0 <N <1. If the calculation result is determined to be less than the predetermined numerical value N, a control signal is transmitted from the CPU 66B to the optical sensor 65 so that the light intensity measurement by the optical sensor 65 is performed again. On the other hand, if it is determined that the calculation result is equal to or greater than the predetermined numerical value N, it is determined that the cleaning end point has been detected, and A control signal is sent from the CPU 66B to the power supply (not shown) for turning on the bulb 43 and the mercury lamp 63, so that the bulb 43 is closed and the lighting of the mercury lamp 63 is stopped.

Hereinafter, the film formation performed by the film forming apparatus 1 will be described with reference to FIG. Note that the mercury lamp 63 is not turned on during film formation. FIG. 2 is a flowchart showing a flow of film formation performed by the film formation apparatus 1 according to the present embodiment.

First, a vacuum pump (not shown) is operated to evacuate the chamber 2. Also, an electric current is applied to the heater 5 to heat the susceptor 4 (step 101).

After the pressure in the chamber 2 decreases to a predetermined pressure and the susceptor 4 is heated to a predetermined temperature, the gate valve 3 is opened, and the transfer arm (not shown) holding the wafer W extends, and the inside of the chamber 2 is extended. The wafer W is carried in (step 102).

Thereafter, the transfer arm is retracted, and the wafer W is placed on the wafer elevating pins 6. After the wafer W is mounted on the wafer elevating pins 6, the wafer elevating pins 6 are lowered by the driving of the air cylinder 8, and the wafer W is mounted on the susceptor 4 (step 103).

After the wafer W is stabilized to about 4 0 0 ° C, while the pressure in the chamber 2 is maintained at about 5 0~ 4 0 0 P a, valve 2 3 is opened, T i C 1 ₄ is It is supplied into the chamber 2 at a flow rate of about 30 sccm (step 104). When T i C 1 ₄ the supplied contacts the wafer W, T i C 1 ₄ is adsorbed on the wafer W surface.

After a predetermined time, valve 2 3 is closed, the supply of T i C 1 ₄ is stopped, T i C 1 ₄ remaining in the chamber 2 is discharged from the chamber 2 (Step 1 0 5). At the time of discharge, the chamber 2 The pressure is maintained at about ^{1. 3 3 X 1 0- 2} P a.

After a lapse of a predetermined time, the valve 33 is opened, and NH ₃ is supplied into the chamber 2 at a flow rate of about 100 sccm (step 106). When supplied NH ₃ comes into contact with T i C 1 ₄ adsorbed on the wafer W, by the reaction with T i C 1 ₄ and NH _3, T i N film is formed on the wafer W.

After a lapse of a predetermined time, the valve 33 is closed, the supply of NH ₃ is stopped, and NH _{3 and the} like remaining in the chamber 2 are discharged from the chamber 2 (step 107). At the time of discharge, the pressure in the chamber 2 is about 1 3 3 X 1 0 - is maintained at ² P a..

After a lapse of a predetermined time, the process from step 104 to step 107 is regarded as one cycle, and it is determined by the central controller (not shown) whether or not the process has been performed for about 200 cycles (step 10). 8). If it is determined that the processing has not been performed for about 200 cycles, the steps from step 104 to step 107 are performed again.

When it is determined that the process has been performed for about 200 cycles, the wafer elevating pins 6 are raised by driving the air cylinder 8, and the wafer W is separated from the susceptor 4 (Step 109). When the process is performed for about 200 cycles, a TiN film of about 100 nm is formed on the wafer W.

Thereafter, after the gate valve 3 is opened, the transfer arm (not shown) extends, and the transfer arm holds the wafer W. Finally, the transfer arm is retracted, and the wafer W is unloaded from the chamber 2 (step 110).

Hereinafter, cleaning performed in the film forming apparatus 1 will be described with reference to FIGS. FIG. 3 is a flow chart showing the flow of cleaning performed in the film forming apparatus 1 according to the present embodiment, and FIGS. 4A and 4B are diagrams of the cleaning according to the present embodiment. It is a schematic process diagram.

First, a vacuum pump (not shown) is activated to evacuate the chamber 2 Done. An electric current is applied to the heaters 5 and 10 to heat the chamber 2 and the susceptor 4 (step 201A).

After the pressure in chamber 2 is maintained at 650 Pa or less, and the temperature of chamber 2 and susceptor 4 etc. stabilizes at about 200 ° C, valve 43 is opened, and as shown in FIG. Uni C 1 ₂ it shown is supplied into the Chan server 2 at a flow rate of about 5 0 0 sccm. Also, the mercury lamp 63 is turned on, and ultraviolet rays are emitted from the mercury lamp 63 (step 202A). By mercury lamp 6 3 is turned with C 1 ₂ is supplied into the chamber 2, click re-learning in the chamber 2 is performed, T i N attached to the chamber or the like are removed. Specifically, when ultraviolet rays emitted from the mercury lamp 6 3 is irradiated to C 1 ₂ via the UV radiation transmission window 6 1, C 1 ₂ excites absorbs ultraviolet approximately 3 3 2 nm. As a result, a reaction of the C 1 ₂ and T i N, T i C] ₄ and N ₂ is produced. T i C 1 ₄ and N ₂ that generated is because it is in a gaseous state, are quickly discharged from the chamber 2 by the exhaust gas. Incidentally, C l ₂ is in between the click Lee Jung is being performed, is always supplied.

Next, in a state where the cleaning is being performed, the intensity of light transmitted through the ultraviolet transmitting window 61 is measured by the optical sensor 65 as shown in FIG. 4B (step 203A).

The information on the light intensity measured by the light sensor 65 is sent to the CPU 66B, and the CPU 66B performs cleaning on the light intensity stored in the memory 66A. The ratio of the light intensity measured during the operation is calculated, and it is determined whether the calculation result is equal to or greater than a predetermined value N (Step 204A). _{C The} calculation result is smaller than the predetermined value N. If it is determined, a control signal is sent from the CPU 66B to the optical sensor 65, and the light intensity is measured again. If the calculation result is determined to be equal to or greater than the predetermined value N, a control signal from the CPU 66 B turns on the bulb 43 and the mercury lamp 63. Power supply, the valve 43 is closed and the mercury lamp 63 is turned off (step 205A). Thus, the cleaning in the chamber 2 is completed.

In this embodiment, since the click re-learning of Chiyanba within 2 while irradiating light to the C 1 _2, it is possible to remove the T i N at a low temperature, and reduces damage such as chamber 2 and the susceptor 4 be able to. That is, since the click Li one Jung using light Eneru ghee can be filed at a low temperature reacting C 1 ₂ and T i N. Therefore, TiN can be removed at a low temperature. Further, since cleaning is performed without using plasma, damage to the chamber 2, the susceptor 4, and the like can be reduced.

In the present embodiment, since the light intensity is measured by the optical sensor 65 and the end point of the cleaning is detected based on the measurement result, the cleaning corresponding to the adhesion state of the TiN is performed. Can be. As a result, it is possible to suppress the consumption of the cleaning gas due to insufficient cleaning or excessive cleaning. In addition, since excessive cleaning can be suppressed, throughput can be improved.

(Second embodiment)

Hereinafter, a second embodiment of the present invention will be described. In the following description, among the embodiments after this embodiment, the description of the same contents as those of the preceding embodiment may be omitted. In the present embodiment, an example will be described in which the intensity of light reflected by a susceptor is measured to detect the end point of cleaning. FIG. 5 is a schematic configuration diagram of a film forming apparatus according to the present embodiment. As shown in FIG. 5, a lamp 71 is provided above the ultraviolet ray transmitting window 61. The lamp 71 is arranged at an angle such that generated light is mainly reflected by the susceptor 4. On the back side of the lamp 71, a reflector 7 2 that reflects the light emitted from the lamp 71 and guides the reflected light to the susceptor 4 Are arranged. An optical sensor 65 that mainly measures the intensity of light reflected by the susceptor 4 is embedded in the ultraviolet transmission window 61. Here, comparing the reflectance of TiN and the ceramic, the reflectance of TiN is higher than that of the ceramic. On the other hand, susceptor 4 is formed from ceramics. Therefore, when the TiN attached to the susceptor 4 decreases due to the cleaning, the light intensity measured by the optical sensor 65 decreases. From this, by measuring the intensity of the light reflected by the susceptor 4, the degree of the clearing can be known.

The memory 66 A of the controller 66 of the present embodiment stores the intensity information of the light reflected by the susceptor 4, which is measured in a state where the TiN does not adhere to the susceptor 4. The CPU 66B stores the light intensity information stored in the memory 66A based on the light intensity information stored in the memory 66A and the light intensity information measured during the cleaning. The ratio of the light intensity measured during cleaning to the light intensity is calculated, and it is determined whether or not the calculation result is a predetermined numerical value N or less, for example, 1.1 or less. . Here, the predetermined numerical value N satisfies 1 <N. When it is determined that the calculation result has exceeded the predetermined numerical value N, a control signal for performing the light intensity measurement by the optical sensor 65 again is transmitted from the CPU 66 B to the optical sensor 65. On the other hand, if it is determined that the calculation result is equal to or smaller than the predetermined numerical value N, it is determined that the cleaning end point has been detected, the valve 43 is closed, and the lighting of the mercury lamp 63 is stopped. Such a control signal is sent from the CPU 66 B to a power source (not shown) for turning on the bulb 43 and the mercury lamp 63.

Hereinafter, the cleaning performed in the film forming apparatus 1 will be described with reference to FIGS. FIG. 6 is a flow chart showing the flow of clean Jung performed in the film forming apparatus 1 according to the present embodiment, and FIG. 7 relates to the present embodiment. FIG. 3 is a schematic process diagram of a cleaning process.

First, a vacuum pump (not shown) is operated to evacuate the chamber 2. Further, the chamber 2 and the susceptor 4 are heated (Step 201B).

Is maintained below the pressure 6 5 0 P a of the chamber 2, and after the temperature of such chamber 2及beauty susceptor 4 was stabilized to about 2 0 0 ° C, C 1 2 is a flow rate of about 5 0 0 sccm It is supplied into the chamber 2. Also, the mercury lamp 63 is turned on, and the mercury lamp 63 emits ultraviolet rays. (Step 202B). Thereafter, while the cleaning is being performed, the lamp 71 is turned on as shown in FIG. 7 and the intensity of the light reflected by the susceptor 4 is measured by the optical sensor 65 (step 203). B).

The light intensity information measured by the light sensor 65 is sent to the CPU 66B, and the CPU 66B performs a clean jungle for the light intensity stored in the memory 66A. The ratio of the light intensity measured during the operation is calculated, and it is determined whether or not the calculation result is a predetermined numerical value N or less (step 204B). If it is determined that the calculation result exceeds the predetermined numerical value N, a control signal is sent from the CPU 66 B to the optical sensor 65, and the light intensity is measured again. If it is determined that the calculation result is equal to or smaller than the predetermined numerical value N, a control signal is sent from the CPU 66 B to a power source (not shown) for turning on the bulb 43 and the mercury lamp 63, and the valve 43 is turned on. When the lamp is closed, the lighting of the mercury lamp 63 is stopped (step 205B). As a result, the clearing in the chamber 2 is terminated.

It should be noted that the present invention is not limited to the description in the above embodiment, and the structure, the material, the arrangement of each member, and the like can be appropriately changed without departing from the gist of the present invention. In the first embodiment, it measures the intensity of light emitted from the mercury lamp 6 3 for exciting the C l _2, second real As to excite the C 1 ₂ Unaryo of facilities embodiment may measure the intensity of light emitted from another lamp.

In the second embodiment, although as to excite the C 1 ₂ measures the intensity of the light emitted from the lamp 71 Ru another lamp der, Unaryo the first embodiment C the intensity of the light emitted from the mercury lamp 6 3 for exciting a ₂ may be measured. In addition, although the intensity of light reflected by the susceptor 4 is measured, the intensity of light reflected by the inner wall of the chamber 2 or another member provided inside the chamber 2 may be measured.

In the first and second embodiments, the intensity of light is measured by the optical sensor 65, but the intensity of each wavelength of light may be measured by a spectroscope. Also, the mercury lamp 63 is not turned on during the film formation, but the mercury lamp 63 may be turned on during the film formation.

In the first and second embodiments, as a gas for forming, the use of the T i C 1 ₄ and NH _3, it is also possible to use other gases. For example, T i F ₄ and NH ₃ , T i Br ₄ and NH ₃ , T i I ₄ and NH ₃ , T i [N (C ₂ H 5 CH a) ₂ ] ₄ (TEMAT) and NH ₃ , T i [N (CH ₃ ) ₂ ] ₄ (T DMA T) and NH ₃ , T i [N (C ₂ H ₅ ) ₂ ] ₄ (TDEAT) and NH ₃ , Ta F ₅ and NH ₃ , T a C l ₅ and NH _3, T a B r ₅ and NH _3, T al ₅ and _{_{NH 3, T a (OC 2}} H 5) 5 and _{_{0 2, T a (OC 2}} H 5) 5 and H ₂ 0, or T a (OC ₂ H ₅ ) ₅ and H ₂ O ₂ may be used. Incidentally, T i F ₄ and NH _3, T i B r ₄ and NH _3, T i I ₄ and _{NH 3, T i [N (} C 2 H 5 CH 3) 2] 4 (T EMAT) and NH _3, when using _{T i [N (CH 3)} 2] 4 (T DM AT) and NH ₃ or _{T i [N (C 2 H} 5) 2] 4 (TDEAT) and NH _3, is on the wafer W Thus, a TiN film is formed. Further, T a F ₅ and NH _3, T a C 1 ₅ and NH _3, T a B r ₅ and NH _3, or in the case of using a T a I ₅ and NH ₃ is, T a N on the wafer W A film is formed. Sa Furthermore, when using Ta (OC ₂ H ₅ ) ₅ and O ₂ , Ta (OC ₂ H ₅ ) ₅ and H ₂ O, or Ta (OC ₂ H ₅ ) ₅ and H ₂ O ₂ A Ta ₂ O ₅ film is formed on the wafer W.

In the first and second embodiments, the T i C l ₄ and NH ₃ but supplied in the order of T i C l _4, NH _3, may not be supplied with this good Una order. Furthermore, although supply T i C 1 ₄ and NH ₃ are alternately it may supply these gases simultaneously. The same applies to the other gases described above. In the first and second embodiments, although to drain T i C 1 ₄ or the like is evacuated from Chiyanba inside 2, also supply a purge gas such as N ₂ into the chamber 2 during the exhaust It is possible. In addition, although the wafer W is used, it may be a glass substrate.

In the first and second embodiments, the film forming apparatus is described. However, the present invention is not limited to the film forming apparatus but can be applied to an etching apparatus. In this case, the etching gas may be supplied alternately or simultaneously. Industrial applicability

The cleaning method and the substrate processing apparatus for a substrate processing apparatus according to the present invention can be used in the semiconductor manufacturing industry.

Claims

The scope of the claims

1. a cleaning gas supply step of supplying a cleaning gas to the processing container in a state where the cleaning substance is present in the processing container of the substrate processing apparatus;

A light irradiation step of irradiating the processing vessel with light for exciting the cleaning gas;

A method for cleaning a substrate processing apparatus, comprising:

2. The cleaning method for a substrate processing apparatus according to claim 1, wherein the cleaning gas contains at least one of a chlorine-containing gas and a fluorine-containing gas.

3. The method according to claim 1, wherein the light is ultraviolet light or infrared light.

4. The method further comprises: a light intensity measuring step of measuring an intensity of light transmitted through the light transmitting window of the processing container; and an end point detecting step of detecting an end point of cleaning based on the measured intensity of the light. A method for cleaning a substrate processing apparatus according to claim 1, which is characterized in that:

5. A light intensity measuring step of measuring the intensity of light reflected by the inner wall of the processing container or a member disposed in the processing container, and a cleaning process based on the measured intensity of the light. The cleaning method of the substrate processing apparatus according to claim 1, further comprising an end point detecting step of detecting an end point.

6. A processing container for accommodating the substrate;

A processing gas supply system for supplying a processing gas for performing processing to the substrate into the processing container;

A cleaning gas supply system for supplying a cleaning gas for removing a cleaning substance into the processing container; A light source for generating light for exciting the cleaning gas supplied into the processing container;

A substrate processing apparatus comprising:

7. The substrate processing apparatus according to claim 6, wherein the cleaning gas contains at least one of a chlorine-containing gas and a fluorine-containing gas.